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LT1055MH Linear Technology IC OP-AMP, 1200 uV OFFSET-MAX, 4.5 MHz BAND WIDTH, MBCY8, METAL CAN, TO-5, 8 PIN, Operational Amplifier
LT1058ACJ Linear Technology IC QUAD OP-AMP, 1200 uV OFFSET-MAX, 5 MHz BAND WIDTH, CDIP14, 0.300 INCH, HERMETIC SEALED, CERDIP-14, Operational Amplifier
LT1055MH#PBF Linear Technology IC OP-AMP, 1200 uV OFFSET-MAX, 4.5 MHz BAND WIDTH, MBCY8, LEAD FREE, METAL CAN, TO-5, 8 PIN, Operational Amplifier
LT1638HS#TRPBF Linear Technology IC QUAD OP-AMP, 1200 uV OFFSET-MAX, 1.2 MHz BAND WIDTH, PDSO14, 0.150 INCH, LEAD FREE, PLASTIC, SOP-14, Operational Amplifier
LT1639IN#TR Linear Technology IC QUAD OP-AMP, 1200 uV OFFSET-MAX, 1.2 MHz BAND WIDTH, PDIP14, 0.300 INCH, PLASTIC, DIP-14, Operational Amplifier
LT1639IN#TRPBF Linear Technology IC QUAD OP-AMP, 1200 uV OFFSET-MAX, 1.2 MHz BAND WIDTH, PDIP14, 0.300 INCH, LEAD FREE, PLASTIC, DIP-14, Operational Amplifier

MTBF fit IGBT 1200 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2001 - infineon mtbf

Abstract: MTBF IGBT MTBF IGBT fit igbt failure fit mtbf infineon igbt infineon 10000Fit igbt failure igbt failure rate
Text: APPLICATION NOTE Page 1 von 2 Definition of FIT and MTBF A failure rate =is defined by the , rate or fit value is used to calculate the MTBF (mean time between failures) of a complete equipment , is built of 50 components with 250 fit each, which adds up to a MTBF of 1 / (50×250fit) = 80.000 h , the fit value, the operating conditions must be given. For eupec IGBT modules these conditions are , failure rates is 1 fit (failures in time) = 1*10-9h-1, meaning one failure in 109 operation hours of the


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PDF 10-9h-1, 5000h infineon mtbf MTBF IGBT MTBF IGBT fit igbt failure fit mtbf infineon igbt infineon 10000Fit igbt failure igbt failure rate
advantage and disadvantage of igbt

Abstract: Calculation of major IGBT operating parameters failure analysis IGBT IEC60749-5 igbt failure fit IEC60749 MTBF IGBT fit IEC60068-2-6 IEC60068-2-27 calculation of the major IGBT operating
Text: AN 5945 IGBT Module Reliability Application Note AN5945-5 October 2010 LN27638 Authors , insulation and also overfill of epoxy resin to provide rigidity. IGBT & FRD Die Substrate Assembly , increasing harsh environments and Governmental legislation for environmentally friendly product. IGBT MODULE Fig. 1 illustrates the basic components and the construction of the IGBT module. IGBT and FRD , Module Assembly Fig. 1 Construction of IGBT module Owing to the complexity in construction, the


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PDF AN5945-5 LN27638 advantage and disadvantage of igbt Calculation of major IGBT operating parameters failure analysis IGBT IEC60749-5 igbt failure fit IEC60749 MTBF IGBT fit IEC60068-2-6 IEC60068-2-27 calculation of the major IGBT operating
2003 - IEC60749

Abstract: MTBF IGBT fit MTBF IGBT module igbt failure IEC60068-2-14 vibration igbt module testing AN5945-3 igbt testing procedure ge traction motor igbt qualification circuit
Text: AN 5945 IGBT Module Reliability Application Note AN5945-3 October 2009 LN26894 Authors , insulation and also overfill of epoxy resin to provide rigidity. IGBT & FRD Die Substrate Assembly , increasing harsh environments and Governmental legislation for environmentally friendly product. IGBT MODULE Fig. 1 illustrates the basic components and the construction of the IGBT module. IGBT and FRD , Module Assembly Fig. 1 Construction of IGBT module Owing to the complexity in construction, the


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PDF AN5945-3 LN26894 IEC60749 MTBF IGBT fit MTBF IGBT module igbt failure IEC60068-2-14 vibration igbt module testing igbt testing procedure ge traction motor igbt qualification circuit
2011 - Not Available

Abstract: No abstract text available
Text: floor life at <30°C / 85% relative humidity) Failures in Time ( FIT ) / Mean Time Between Failures ( MTBF , Document 561 SMT Gate Drive Transformer · Designed for transformer coupled MOSFET and IGBT gate drive circuits; operating frequency: 50 kHz to 2 MHz. · 2250 Vdc primary to secondary isolation · Requires only 56 mm2 of board space. · Specified by National Semiconductor on AN-1521 for their POE+PHYTEREV-I/-E evaluation boards. Core materialFerrite Terminations RoHS compliant tin-silver over tin over


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PDF AN-1521
2009 - FA2659-ALC

Abstract: SR-332 NATIONAL IGBT igbt gate drive circuits Telcordia SR-332 362 MOSFET
Text: Document 561 SMT Gate Drive Transformer · Designed for transformer coupled MOSFET and IGBT gate drive circuits; operating frequency: 50 kHz to 2 MHz. · 2250 Vdc primary to secondary isolation · Requires only 56 mm2 of board space. · Specified by National Semiconductor on AN-1521 for their , (unlimited floor life at <30°C / 85% relative humidity) Failures in Time ( FIT ) / Mean Time Between Failures ( MTBF ) 38 per billion hours / 26,315,789 hours, calculated per Telcordia SR-332 Packaging 175/7reel


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PDF AN-1521 EIA-481 FA2659-ALC SR-332 NATIONAL IGBT igbt gate drive circuits Telcordia SR-332 362 MOSFET
2013 - FA2659-AL

Abstract: FA2659 AN1521 MTBF IGBT fit
Text: Document 561 SMT Gate Drive Transformer · Designed for transformer coupled MOSFET and IGBT gate drive circuits; operating frequency: 50 kHz to 2 MHz. · 2250 Vdc, one minute primary to secondary isolation · Requires only 56 mm2 of board space. · Specified by National Semiconductor on AN-1521 for their , ) 1 (unlimited floor life at <30°C / 85% relative humidity) Failures in Time ( FIT ) / Mean Time Between Failures ( MTBF ) 38 per billion hours / 26,315,789 hours, calculated per Telcordia SR-332 Packaging 175


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PDF AN-1521 FA2659-AL FA2659 AN1521 MTBF IGBT fit
2011 - Not Available

Abstract: No abstract text available
Text: Document 512 SMT Gate Drive Transformers · Designed for high switching speed, transformer coupled MOSFET and IGBT gate drive circuits. · Operating frequency: 50 kHz ­ 2 MHz · Primary to secondary isolation: 1500 Vdc. For DA2317-AL and DA2320-AL, isolation between secondaries is 500 Vdc. Core , (unlimited floor life at <30°C / 85% relative humidity) Failures in Time ( FIT ) / Mean Time Between Failures ( MTBF ) 38 per billion hours / 26,315,789 hours, calculated per Telcordia SR-332 Packaging 250/7 reel


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PDF DA2317-AL DA2320-AL, 30parts 323max DA2318-AL, DA2319-AL DA2317-AL, DA2320-AL
2012 - Not Available

Abstract: No abstract text available
Text: <30°C / 85% relative humidity) Failures in Time ( FIT ) / Mean Time Between Failures ( MTBF ) 38 per , Document 512 SMT Gate Drive Transformers •฀ Designed฀ for฀ high฀ switching฀ speed,฀ transformer฀ coupled฀ MOSFET and IGBT gate drive circuits. •฀ Operating฀frequency:฀50฀kHz฀–฀2฀MHz •฀ ฀ and DA2320-AL, isolation between secondaries is 500 Vdc. Core material Ferrite Terminations RoHS compliant tin-silver


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PDF DA2317-ALà DA2320-AL, DA2318-AL, DA2319-AL DA2317-AL, DA2320-AL
2014 - Not Available

Abstract: No abstract text available
Text: life at <30°C / 85% relative humidity) Failures in Time ( FIT ) / Mean Time Between Failures ( MTBF , Document 512 SMT Gate Drive Transformers • Designed for high switching speed, transformer coupled MOSFET and IGBT gate drive circuits. • Operating frequency: 50 kHz – 2 MHz • Primary to secondary isolation: 1500 Vdc. For DA2317-AL and DA2320-AL, isolation between secondaries is 500 Vdc. Core material Ferrite Terminations  RoHS compliant tin-silver over tin over nickel over


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PDF DA2317-AL DA2320-AL,
2009 - DA2320

Abstract: DA2320-ALC DA2319-AL DA2320-AL DA2317-AL billion transformer SR-332 da2319
Text: Document 512 SMT Gate Drive Transformers · Designed for high switching speed, transformer coupled MOSFET and IGBT gate drive circuits. · Operating frequency: 50 kHz ­ 2 MHz · Primary to secondary isolation: 1500 Vdc. For DA2317-AL and DA2320-AL, isolation between secondaries is 500 Vdc. Core , (MSL) 1 (unlimited floor life at <30°C / 85% relative humidity) Failures in Time ( FIT ) / Mean Time Between Failures ( MTBF ) 38 per billion hours / 26,315,789 hours, calculated per Telcordia SR


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PDF DA2317-AL DA2320-AL, 323max DA2317-AL, DA2320-AL DA2318-AL, DA2319-AL DA2320 DA2320-ALC DA2319-AL DA2320-AL DA2317-AL billion transformer SR-332 da2319
2010 - Not Available

Abstract: No abstract text available
Text: Document 512 SMT Gate Drive Transformers · Designed for high switching speed, transformer coupled MOSFET and IGBT gate drive circuits. · Operating frequency: 50 kHz ­ 2 MHz · Primary to secondary isolation: 1500 Vdc. For DA2317-AL and DA2320-AL, isolation between secondaries is 500 Vdc. Core material , (unlimited floor life at <30°C / 85% relative humidity) Failures in Time ( FIT ) / Mean Time Between Failures ( MTBF ) 38 per billion hours / 26,315,789 hours, calculated per Telcordia SR-332 Packaging 250/7 reel


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PDF DA2317-AL DA2320-AL, 323max DA2318-AL, DA2319-AL DA2317-AL, DA2320-AL
2013 - Not Available

Abstract: No abstract text available
Text: Document 512 SMT Gate Drive Transformers · Designed for high switching speed, transformer coupled MOSFET and IGBT gate drive circuits. · Operating frequency: 50 kHz ­ 2 MHz · Primary to secondary isolation: 1500 Vdc. For DA2317-AL and DA2320-AL, isolation between secondaries is 500 Vdc. Core , Level (MSL) 1 (unlimited floor life at <30°C / 85% relative humidity) Failures in Time ( FIT ) / Mean Time Between Failures ( MTBF ) 38 per billion hours / 26,315,789 hours, calculated per Telcordia SR-332 Packaging


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PDF DA2317-AL DA2320-AL, 323max DA2318-AL, DA2319-AL DA2317-AL, DA2320-AL
2013 - Not Available

Abstract: No abstract text available
Text: Document 512 SMT Gate Drive Transformers · Designed for high switching speed, transformer coupled MOSFET and IGBT gate drive circuits. · Operating frequency: 50 kHz ­ 2 MHz · Primary to secondary isolation: 1500 Vdc. For DA2317-AL and DA2320-AL, isolation between secondaries is 500 Vdc. Core , Level (MSL) 1 (unlimited floor life at <30°C / 85% relative humidity) Failures in Time ( FIT ) / Mean Time Between Failures ( MTBF ) 38 per billion hours / 26,315,789 hours, calculated per Telcordia SR-332 Packaging


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PDF DA2317-AL DA2320-AL, 323max DA2318-AL, DA2319-AL DA2317-AL, DA2320-AL
2012 - Not Available

Abstract: No abstract text available
Text: Document 512 SMT Gate Drive Transformers · Designed for high switching speed, transformer coupled MOSFET and IGBT gate drive circuits. · Operating frequency: 50 kHz ­ 2 MHz · Primary to secondary isolation: 1500 Vdc. For DA2317-AL and DA2320-AL, isolation between secondaries is 500 Vdc. Core , (unlimited floor life at <30°C / 85% relative humidity) Failures in Time ( FIT ) / Mean Time Between Failures ( MTBF ) 38 per billion hours / 26,315,789 hours, calculated per Telcordia SR-332 Packaging 250/7 reel


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PDF DA2317-AL DA2320-AL, 303max DA2318-AL, DA2319-AL DA2317-AL, DA2320-AL
2013 - Not Available

Abstract: No abstract text available
Text: Document 561 SMT Gate Drive Transformer · Designed for transformer coupled MOSFET and IGBT gate drive circuits; operating frequency: 50 kHz to 2 MHz. · 2250 Vdc primary to secondary isolation · Requires only 56 mm2 of board space. · Specified by National Semiconductor on AN-1521 for their , ) 1 (unlimited floor life at <30°C / 85% relative humidity) Failures in Time ( FIT ) / Mean Time Between Failures ( MTBF ) 38 per billion hours / 26,315,789 hours, calculated per Telcordia SR-332 Packaging 175


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PDF AN-1521
2010 - Not Available

Abstract: No abstract text available
Text: Document 512 SMT Gate Drive Transformers · Designed for high switching speed, transformer coupled MOSFET and IGBT gate drive circuits. · Operating frequency: 50 kHz ­ 2 MHz · Primary to secondary isolation: 1500 Vdc. For DA2317-AL and DA2320-AL, isolation between secondaries is 500 Vdc. Core material , (unlimited floor life at <30°C / 85% relative humidity) Failures in Time ( FIT ) / Mean Time Between Failures ( MTBF ) 38 per billion hours / 26,315,789 hours, calculated per Telcordia SR-332 Packaging 250/7 reel


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PDF DA2317-AL DA2320-AL, 323max DA2318-AL, DA2319-AL DA2317-AL, DA2320-AL
2000 - semikron SKHI 21

Abstract: MTBF fit IGBT 1200 SKHI 22 B R bi-directional switches IGBT driver SKHI22B skhi21a SKHI 22 SKHI 21 wacker static characteristics of mosfet and igbt
Text: low and medium power range IGBT and MOSFETs. The SKHI 22A (SKHI 21A) is a form-, fit - and mostly , Typical values are for 1200 V IGBT : VCEstat = 5 V; tmin = 1,45 µs, RCE = 18 k, CCE = 330 pF for , Output average current max. switching frequency Collector emitter voltage sense across the IGBT 18 , RGoffmin Qout/pulse Top Tstg SKHIxxA SKHI22B SEMIDRIVER ® Hybrid Dual IGBT Driver SKHI 22 A / B · Double driver for halfbridge IGBT modules · SKHI 22 A/B H4 is for 1700 V-IGBT · SKHI 22 A


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PDF Visol12 SKHI22B Isolation06 \Marketin\FRAMEDAT\datbl\Treiber\SKHI22a semikron SKHI 21 MTBF fit IGBT 1200 SKHI 22 B R bi-directional switches IGBT driver SKHI22B skhi21a SKHI 22 SKHI 21 wacker static characteristics of mosfet and igbt
2003 - MTBF fit IGBT 1200

Abstract: semikron SKHI 21 SKHI 22 A/B H4 R SKHI 21a driver power modul inverter pactan semikron SKHI 22 pcb diagram welding inverter Semidriver 22A semikron SKHI 24
Text: . Determine tmin and calculate CCE according to equations (2) and (3). Typical values are for 1200 V IGBT , Output average current max. switching frequency Collector emitter voltage sense across the IGBT 18 , RGoffmin Qout/pulse Top Tstg SKHIxxA SKHI22B SEMIDRIVER ® Hybrid Dual IGBT Driver SKHI 22 A / B · Double driver for halfbridge IGBT modules · SKHI 22 A/B H4 is for 1700 V-IGBT · SKHI 22 A , ­ pF 1) MTBF m Mean Time Between Failure Ta = 40° C weight ­ ­ 2,0 45 ­ ­


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PDF Visol12 SKHI22B SKPC2006 MTBF fit IGBT 1200 semikron SKHI 21 SKHI 22 A/B H4 R SKHI 21a driver power modul inverter pactan semikron SKHI 22 pcb diagram welding inverter Semidriver 22A semikron SKHI 24
2003 - RH117

Abstract: AN8601-1 RH137 statistical process control vehicle assembly line Activation Energy
Text: hours. At present the life test data demonstrates a Mean Time Between Failure ( MTBF ) of 1.076 x 109 hours at the 95% Confidence Limit (CL), i.e. only a 5% risk of the MTBF being a lower value. FIT , Application Note Reliability MTBF Assessment for the VRG8601/2 Rad Hard Dual Adjustable , relates more to the Reliability function and MTBF . Therefore the VRG8601/2 probability of success for any , /07 2 Rev A CHI-SQUARE SOLUTION DEFINITION The FIT calculation including a Confidence Level


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PDF VRG8601/2 AN8601-1 VRG8601/2 VGR8601/2 RH117 RH137) es/datasheets/power/8601-04data1-951-4164 AN8601-1 RH117 RH137 statistical process control vehicle assembly line Activation Energy
2008 - flash "high temperature data retention" mechanism

Abstract: MSP430F4xx SLAA392 MSP430F1xx MSP430 11303-3 flash
Text: directly contributes to the FIT . Mean Time Between Failures ( MTBF ) MTBF is the inverse of the FIT for a , numbers are known, it is easy to calculate the MTBF defined by: MTBFyears = 1 ×109 FIT , Number of years 1400 1200 1000 800 600 400 200 0 20 30 40 50 60 70 80 Temperature , bathtub curve of Figure 3. Failure-In-Time ( FIT ) Rate 9 FIT is a direct measure of failure rate in 10 , sections. This factor also contributes inversely to the FIT . Confidence Level (CL) CL is the probability


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PDF SLAA392 MSP430 MSP430 flash "high temperature data retention" mechanism MSP430F4xx SLAA392 MSP430F1xx 11303-3 flash
1996 - CT-Concept Technology

Abstract: 800 kva inverter diagrams fast thyristor 200A gate control circuits gto turn on process FZ800R16KF1 CT-Concept single phase inverter IGBT driver 50 kva GTO Gate Drivers Eupec Power Semiconductors IGBT Drivers Transistors
Text: of 3300 V/ 1200 A. These new high-power IGBT modules are moving into applications which used to be , packaging has made IGBT modules more compact and easier to use than ever. Another upshot of this trend is , function of the IGBT driver is to process the gate driver pulses generated by the control electronics so that the power semiconductors are optimally driven. In bridge circuits, which are basic to most IGBT , just a few years, IGBTs As a typical IGBT power stage operates on (insulated gate bipolar transistors


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PDF CH-2533 CT-Concept Technology 800 kva inverter diagrams fast thyristor 200A gate control circuits gto turn on process FZ800R16KF1 CT-Concept single phase inverter IGBT driver 50 kva GTO Gate Drivers Eupec Power Semiconductors IGBT Drivers Transistors
1993 - MRF328

Abstract: MRF243 mrf245 MRF648 MRF463 Motorola transistors MRF648 MRF460 Barnes RM2A Motorola transistors MRF455 Motorola transistors MRF454
Text: ) NOTE: °K = °C + 273. RF Application © Motorola, Inc. 1993 Reports A similar least-square fit to , 3.1683 x 10­3 T (°K) (3) 2 over Similarly for beryllia, one can fit the data of Elston et al the , 700 750 800 850 900 950 1000 1050 1100 1150 1200 1250 1300 1350 7.52 3.88 2.44 1.78 , 200 400 600 800 1000 1200 1400 1600 TEMPERATURE (°K) Figure 2. Thermal , of view. The calibration data of radiance versus temperature can be least-squares curve fit to an


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PDF AN790/D AN790 MRF328 MRF243 mrf245 MRF648 MRF463 Motorola transistors MRF648 MRF460 Barnes RM2A Motorola transistors MRF455 Motorola transistors MRF454
3 phase bridge rectifier 400HZ

Abstract: 3-phase bldc motor single chip 500V direct drive MTBF fit IGBT 1200 H BRIDGE inverters using igbt in matlab single phase fully controlled rectifier 110v 440V ac to 390V dc converter circuit SEN-5282-2 full wave bridge rectifier 25A 50V fast recovery zener ssr 115v 400Hz
Text: , DesignModeler ANSYS Mechanical Reliability Engineering FIT / MTTF / MTBF Acceleration Aging Factor , system evaluation available for any product! Selectable Features / Benefits MOSFET or IGBT output , -461 Compliant IGBT and MOSFET Bridges · MOSFETs: 30 to 600V, Up to 100A · IGBTs: 600 to 1200V, Up to 250A , Limiter Bus Voltage TVS Regenerative Brake Limiter · · · · · · · · · · · · · IGBT , configurations · · · · SiC Schottky Rectifers & Bridges SiC Schottky Rectifiers: Up to 1200 V SiC


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PDF AS9100 MIL-PRF-19500 MIL-PRF-38534 3 phase bridge rectifier 400HZ 3-phase bldc motor single chip 500V direct drive MTBF fit IGBT 1200 H BRIDGE inverters using igbt in matlab single phase fully controlled rectifier 110v 440V ac to 390V dc converter circuit SEN-5282-2 full wave bridge rectifier 25A 50V fast recovery zener ssr 115v 400Hz
2013 - Not Available

Abstract: No abstract text available
Text: circuits, low frequency analog circuits, and IGBT power device driving circuits. SELECTION GUIDE Input , Switching Frequency 100% load, nominal input - 100 - KHz MTBF MIL-HDBK , is just fit for the part number in the selection guide, and may be different from the


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PDF B0505KLD-1W B0505KLD-1W
1998 - SKHI21

Abstract: pcb diagram of mini ups system SKHI22 SKHI22B SKHI22A for igbt 600v semikron SKpc dual skhi 21 semikron SKpc SKHI22A SKPC2006 pactan
Text: frequency Collector-Emitter voltage sense across the IGBT Rate of rise and fall of voltage secondary to , time Top-bottom-interlock-deadtime Reference voltage for VCE-monitoring Cps MTBF m Coupling , 45 ­ g 0898 SEMIDRIVER ® Hybrid Dual IGBT Driver SKHI 22 A / B · Dual driver for halfbridge IGBT modules · SKHI 22 A/B H4 is for 1700 V-IGBT · SKHI 22 A is compatible to old SKHI 22 · , Applications · Driver for IGBT and MOSFET modules in bridge circuits in choppers, inverter drives, UPS and


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PDF Visol12 SKHI22B 7720S, SKPC2006 SKHI21 pcb diagram of mini ups system SKHI22 SKHI22B SKHI22A for igbt 600v semikron SKpc dual skhi 21 semikron SKpc SKHI22A SKPC2006 pactan
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