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MT4LC16M4G3TG-5 Micron Technology Inc Bristol Electronics 1,255 $4.48 $1.84
MT4LC16M4G3TG-5F Micron Technology Inc Bristol Electronics 1,265 $4.48 $1.84
MT4LC16M4H9DJ-5 Micron Industries Corporation Bristol Electronics 13,090 - -
MT4LC16M4H9TG5F Micron Technology Inc ComS.I.T. 96 - -

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MT4LC16M4 datasheet (68)

Part Manufacturer Description Type PDF
MT4LC16M4A7 Micron DRAM Original PDF
MT4LC16M4A7DJ-5 Micron DRAM Original PDF
MT4LC16M4A7DJ-5 Micron 16 MEG x 4 FPM DRAM Original PDF
MT4LC16M4A7DJ-5S Micron DRAM Original PDF
MT4LC16M4A7DJ-5S Micron 16 MEG x 4 FPM DRAM Original PDF
MT4LC16M4A7DJ-6 Micron DRAM Original PDF
MT4LC16M4A7DJ-6 Micron 16 MEG x 4 FPM DRAM Original PDF
MT4LC16M4A7DJ-6S Micron DRAM Original PDF
MT4LC16M4A7DJ-6S Micron 16 MEG x 4 FPM DRAM Original PDF
MT4LC16M4A7TG-5 Micron DRAM Original PDF
MT4LC16M4A7TG-5 Micron 16 MEG x 4 FPM DRAM Original PDF
MT4LC16M4A7TG-5S Micron DRAM Original PDF
MT4LC16M4A7TG-5S Micron 16 MEG x 4 FPM DRAM Original PDF
MT4LC16M4A7TG-6 Micron DRAM Original PDF
MT4LC16M4A7TG-6 Micron 16 MEG x 4 FPM DRAM Original PDF
MT4LC16M4A7TG-6S Micron DRAM Original PDF
MT4LC16M4A7TG-6S Micron 16 MEG x 4 FPM DRAM Original PDF
MT4LC16M4G3 Micron DRAM Original PDF
MT4LC16M4G3DJ-5 Micron 16 MEG x 4 EDO DRAM Original PDF
MT4LC16M4G3DJ-5 Micron DRAM Original PDF

MT4LC16M4 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
TC5118160

Abstract: msm-561 TMS444000 msm561 M5M418165 M5M418160 tms44c256 TC5117405 HY514264 HY514260
Text: - Hitachi HM5165405 HM5165805 Hyundai HY51V65404 - - Micron MT4LC16M4


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PDF 256Kx4 MB81C100 MB81C4256 GM71C100 GM71C4256 HM511000 HM514256 HY531000 HY534256 MT4C1024 TC5118160 msm-561 TMS444000 msm561 M5M418165 M5M418160 tms44c256 TC5117405 HY514264 HY514260
1995 - IBM025161LG5D60

Abstract: gm72v16821 MD908 KM48S2020 TC59R1809 KM4232W259Q60 GM72V1682 IBM025171LG5D-70 KM44S4020AT KM416S1120A
Text: SGDRAM 8 Mbit MT4LC16M4 MT4LC 8M8 MT4LC4M16 EDO Burst EDO FP 64 Meg Organization Clock


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PDF MB81141621 MB81141622 MB81G8322 MB81116421 TC59R1608 2ns500MHz TC59R0808 IBM025161LG5D60 gm72v16821 MD908 KM48S2020 TC59R1809 KM4232W259Q60 GM72V1682 IBM025171LG5D-70 KM44S4020AT KM416S1120A
4LC16M4A7/T8

Abstract: 4LC16M
Text: ns ns ns ns ns ns 125,000 37 125,000 45 125,000 50 40 20 20 ns ns MT4LC16M4A?iT8 , ADVANCE |U |C IR O N MT4LC16M4A7 /T8 16 MEG X 4 DRAM DRAM FEATURES · S in g le + 3 .3 V , Technology Ip ADVANCE piCRON FUNCTIONAL BLOCK DIAGRAM MT4LC16M4A7 (13 row-addresses) MT4LC16M4A7 /T8 16 MEG X 4 DRAM F P M DRAM FUNCTIONAL BLOCK DIAGRAM MT4LC16M4T8 (12 row-addresses , MT4LC16M4A7 /T8 16 MEG X 4 DRAM FUNCTIONAL DESCRIPTION T h e fu nction al d e scrip tio n for th e M T 4 L


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PDF MT4LC16M4A7/T8 096-cy 32-Pin 4LC16M4A7/T8 4LC16M
2000 - 168-PIN

Abstract: 128Mb 168-pin
Text: # A1­A11 PRESENCEDETECT PD1-PD8 GENERATOR U0-U17 = MT4LC16M4H9DJ EDO PAGE MODE, SOJ, 4K REFRESH U0-U17 = MT4LC16M4H9TG EDO PAGE MODE, TSOP, 4K REFRESH E# PDE# U0-U17 = MT4LC16M4G3DJ EDO PAGE MODE, SOJ, 8K REFRESH VDD U0-U17, BUFFERS VSS U0-U17 = MT4LC16M4G3TG EDO PAGE MODE, TSOP, 8K , = MT4LC16M4T8DJ EDO PAGE MODE, SOJ, 4K REFRESH U0-U35 = MT4LC16M4T8TG EDO PAGE MODE, TSOP, 4K , occurs last. (Refer to the MT4LC16M4H9 DRAM data sheet for additional information on EDO functionality


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PDF MT18LD MT36LD 168-pin, 128MB 256MB 096-cycle 168-PIN 128Mb 168-pin
MT4LC16M4H9

Abstract: No abstract text available
Text: c · Part Number Example: MT4LC16M4H9DJ-5 N ote: The 16 Meg x 4 EDO DRAM base number differentiates the offerings in one place - MT4LC16M4H9. The fifth field distinguishes the address offerings: H9 , PRELIMINARY |U|IC=RaN 16 MEG x 4 EDO DRAM HR AM MT4LC16M4G3 MT4LC16M4H9 FEATURES · , containing 67,108,864 bits and designed to operate from 3V to 3.6V. The MT4LC16M4H9 and MT4LC16M4G3 are , to retain stored data. 16 MEG x 4 PART NUMBERS PART NUMBER MT4LC16M4H9DJ MT4LC16M4H9TG


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PDF MT4LC16M4G3 MT4LC16M4H9 096-cycle 32-Pin NC/A12 CYCLE24 MT4LC16M4H9
4LC16M

Abstract: No abstract text available
Text: ADVANCE I^i i c r o n MT4LC16M4D7 /D9 16 MEG x 4 BURST EDO DRAM N E W BURST E D O DRAM DRAM FEATURES · Bu rst ord er, in terleav e or linear, p ro g ram m ed by execu tin g W C B R cycle , specifications withoul noltce j 1995, Micron Technology. Inc 1-15 ADVANCE I^IIC ZRO N MT4LC16M4D7 /D9 16 MEG x 4 BURST EDO DRAM N E W BURST E D O DRAM FUNCTIONAL B LO C K DIAGRAM MT4LC16M4D7 , DIAGRAM MT4LC16M4D9 (12 row-addresses) 1-16


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PDF MT4LC16M4D7/D9 MT4LC16M4D7 MT4LC16M4D9 4LC16M
Not Available

Abstract: No abstract text available
Text: mil) Plastic TSOP (400 mil) DJ TG* • Part Number Example: MT4LC16M4A7DJ-5 KEY TIMING , A3 A4 A5 Vcc GENERAL DESCRIPTION The MT4LC16M4A7 and MT4LC16M4T8 are high-speed CMOS dynamic , MT4LC16M4A7 and MT4LC16M4T8 are functionally orga­ nized as 16,777,216 locations containing 4 bits each. The , rows by 4,096 columns for the MT4LC16M4T8. During READ or WRITE cycles, each location is uniquely , operations (READ, WRITE or READMODIFY-WRITE) within a given row. The MT4LC16M4A7 and MT4LC16M4T8 must be reÂ


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PDF MT4LC16M4A7/T8 096-cycle 32-Pin
Not Available

Abstract: No abstract text available
Text: #, whichever occurs last. (Reference the MT4LC16M4H9 DRAM data sheet for additional information on EDO , # 16 Meg x 72 - MT18LD1672AG X U1-U18 = MT4LC16M4H9 EDO PAGE MODE AO A1 A2 SAO SA1 SA2


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PDF MT9LD872A MT18LD1672A MT36LD3272A 168-Pin 168-pin, 128MB 256MB 096-cycle DE-15
Not Available

Abstract: No abstract text available
Text: 32-Pin TSOP* (DB-4) Part Number Example: MT4LC16M4T8DJ-5 Note: The 16 M eg x 4 F P M D R A M , [ [ [ [ [ [ [ Vcc REFRESH MT4LC16M4A7DJ 3.3V 8K 3.3V 8K PACKAGE TSOP MT4LC16M4T8DJ 3.3V , the MT4LC16M4T8. During READ or WRITE cycles, each location is uniquely addressed via the address , READMODIFY-WRITE) within a given row. The MT4LC16M4A7 and MT4LC16M4T8 must be re­ freshed periodically in order to retain stored data. GENERAL DESCRIPTION The MT4LC16M4A7 and MT4LC16M4T8 are high-speed CMOS


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PDF M4LC16MA7 M4LC16MT8 096-cycle 32-Pin
1997 - Not Available

Abstract: No abstract text available
Text: CAS#, whichever occurs last. (Reference the MT4LC16M4H9 DRAM data sheet for additional information on , x 64 - MT16LD1664AG X U1-U16 = MT4LC16M4H9 EDO PAGE MODE 8, 16, 32 Meg x 64 Nonbuffered DRAM , SDA A1 SA1 A2 SA2 U1-U32 U1-U32 32 Meg x 64 - MT32LD3264AG X U1-U32 = MT4LC16M4H9 EDO PAGE MODE


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PDF MT8LD864A MT16LD1664A MT32LD3264A 168-Pin DE-19) DE-20) DE-21) 168-pin, 128MB 256MB
DM77

Abstract: 9921m
Text: PRESENCEDETECT GENERATOR - - k y U0-U35 = MT4LC16M4T8DJ EDO PAGE MODE, SOJ, 4K REFRESH U0-U35 = MT4LC16M4T8TG EDO PAGE MODE, TSOP, 4K REFRESH U0-U35 = MT4LC16M4A7DJ EDO PAGE MODE, SOJ, 8K REFRESH U0-U35 = MT4LC16M4A7TG EDO PAGE MODE, TSOP, 8K REFRESH E# V dd Vss. T" U 0 , MT4LC16M4G3TG EDO PAGE MODE, TSOP, 8K REFRESH Vss NOTE: 1. All inputs with the exception of RAS# are


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PDF MT18LD MT36LD 168-pin, 128MB 096-cycle 168-PIN 256MB DM77 9921m
Not Available

Abstract: No abstract text available
Text: NC ‘ Consult factory for dimensions and availability. 2-79 MT4LC16M4A7-T8 D21 pm5 - Rev 2 , ADVANCE M in S n N I MT4LC16M4A7 /T8 16 MEG X 4 DRAM X 4 DRAM NW E 16 MEG , RITE) within a given row. The MT4LC16M 4A7 and MT4LC16M4T8 must be re­ freshed periodically in order , X A7 X A6 X Vss X F M DRAM P FEATURES ADVANCE MT4LC16M4A7 /T8 16 MEG x 4 DRAM , ADVANCE MT4LC16M4A7 /T8 16 MEG x 4 DRAM MICRON I TECHNOLOGY. INC. LOW, and entering new


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PDF MT4LC16M4A7/T8 096-cycle 34-Pin D012241
Not Available

Abstract: No abstract text available
Text: * PACKAGE REFRESH MT4LC16M4A7DJ-X 8K SOJ Standard MT4LC16M4A7DJ-X S 8K SOJ Self MT4LC16M4A7TG-X 8K TSOP Standard MT4LC16M4A7TG-X S 8K TSOP Self MT4LC16M4T8DJ-X NO TE , columns for the MT4LC16M4A7 or 4,096 rows by 4,096 columns for the MT4LC16M4T8. During READ or 16 Meg x , M IC R O N I . PPM DRAM 16 MEG X 4 MT4LC16M4A7 , MT4LC16M4T8 DRAM For , . ^C ontact fa cto ry fo r av ailab ility KEY TIMING PARAMETERS MT4LC16M4T8DJ-X S SPEED


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PDF MT4LC16M4A7, MT4LC16M4T8 096-cycle 32-Pin
Not Available

Abstract: No abstract text available
Text: DQ32 - DQ35 DQ68 - DQ71 m i DRAM DIMM 16 Meg x 72 - MT18LD1672G X U1-U18 = MT4LC16M4H9 EDO , 72 - MT36LD3272G X U1-U36 = MT4LC16M4H9 EDO PAGE MODE PRESENCE□ÉTECT DQ60 • DQ63 Vcc


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PDF MT9LD872 MT18LD1672 MT36LD3272 168-Pin 168-pin, 128MB 256MB 096-cycle DE-16) DE-17)
2000 - 32-PIN

Abstract: MT4LC16M4G3 MT4LC16M4H9 MT4LC16M4H9DJ-6
Text: MT4LC16M4H9DJ-x MT4LC16M4H9DJ-x S MT4LC16M4H9TG-x MT4LC16M4H9TG-x S MT4LC16M4G3DJ-x MT4LC16M4G3DJ-x S MT4LC16M4G3TG-x MT4LC16M4G3TG-x S None S* REFRESH ADDRESSING PACKAGE REFRESH 4K 4K 4K 4K 8K , . During READ or WRITE cycles, each location is Part Number Example: MT4LC16M4H9DJ-6 KEY TIMING , 16 MEG x 4 EDO DRAM DRAM MT4LC16M4G3 , MT4LC16M4H9 For the latest data sheet, please refer , and designed to operate from 3V to 3.6V. The MT4LC16M4H9 and MT4LC16M4G3 are functionally organized


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PDF MT4LC16M4G3, MT4LC16M4H9 096-cycle 32-Pin MT4LC16M4G3 MT4LC16M4H9 MT4LC16M4H9DJ-6
2000 - MT4LC16M4H9

Abstract: 32-PIN MT4LC16M4G3 MT4LC16M4H9DJ-6
Text: MT4LC16M4H9DJ-x MT4LC16M4H9DJ-x S MT4LC16M4H9TG-x MT4LC16M4H9TG-x S MT4LC16M4G3DJ-x MT4LC16M4G3DJ-x S MT4LC16M4G3TG-x MT4LC16M4G3TG-x S None S* REFRESH ADDRESSING PACKAGE REFRESH 4K 4K 4K 4K 8K , . During READ or WRITE cycles, each location is Part Number Example: MT4LC16M4H9DJ-6 KEY TIMING , 16 MEG x 4 EDO DRAM DRAM MT4LC16M4G3 , MT4LC16M4H9 For the latest data sheet, please refer , and designed to operate from 3V to 3.6V. The MT4LC16M4H9 and MT4LC16M4G3 are functionally organized


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PDF MT4LC16M4G3, MT4LC16M4H9 096-cycle 32-Pin MT4LC16M4H9 MT4LC16M4G3 MT4LC16M4H9DJ-6
2001 - SKIIP 33 nec 125 t2

Abstract: skiip 613 gb 123 ct RBS 6302 ericsson SKIIP 513 gb 173 ct THERMISTOR ml TDK 150M pioneer PAL 010a Project Report of smoke alarm using IC 555 doc SKiip 83 EC 125 T1 ericsson RBS 6000 series INSTALLATION MANUAL Ericsson Installation guide for RBS 6302
Text: No file text available


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PDF 734TL UWEB-MODEM-34 HCS412/WM TLV320AIC10IPFB 100MB NEON250 GA-60XM7E BLK32X40 BLK32X42 SKIIP 33 nec 125 t2 skiip 613 gb 123 ct RBS 6302 ericsson SKIIP 513 gb 173 ct THERMISTOR ml TDK 150M pioneer PAL 010a Project Report of smoke alarm using IC 555 doc SKiip 83 EC 125 T1 ericsson RBS 6000 series INSTALLATION MANUAL Ericsson Installation guide for RBS 6302
tc 97101

Abstract: 4lc eeprom
Text: un uu uu uu uu uu uu · U1-U18 AO U1-U18 = MT4LC16M4H9 EDO PAGE MODE i- I


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PDF MT9LD872A MT18LD1672A MT36LD3272A 168-pin, 096-cycle 168-P 168-PIN tc 97101 4lc eeprom
EDO DRAM

Abstract: No abstract text available
Text: : MT4LC16M4H9DJ-5 N o te: The 16 M eg x 4 EDO DRAM base number differentiates the offerings in * Consult , MT4LC16M4H9DJ 3.3V 4K SOJ MT4LC16M4H9TG 3.3V 4K TSOP MT4LC16M4G3DJ 3.3V 8K SOJ MT4LC16M4G3TG 3.3V 8K TSOP 16 Meg x 4 EDO DRAM D22.pm5 —Rev. 3/97 The “# ” symbol , and d esigned to op erate from 3V to 3.6V . The MT4LC16M4H9 and MT4LC16M4G3 are functionally or , EDO DRAM MICRON I TECHNOLOGY, INC. FUNCTIONAL BLOCK DIAGRAM MT4LC16M4G3 (13 row addresses


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PDF 096-cycle 32-Pin EDO DRAM
1997 - 32-PIN

Abstract: MT4LC16M4A7 MT4LC16M4T8 MT4LC16M4T8DJ-5
Text: : MT4LC16M4T8DJ-5 SPEED -5 -6 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 1 Micron , PRELIMINARY 16 MEG x 4 FPM DRAM TECHNOLOGY, INC. MT4LC16M4A7 MT4LC16M4T8 DRAM , MT4LC16M4A7. The fifth field distinguishes various options: A7 designates an 8K refresh and a T8 designates a , 25ns 30ns 13ns 15ns 16 MEG x 4 FPM DRAM PART NUMBERS PART NUMBER MT4LC16M4A7DJ MT4LC16M4A7TG MT4LC16M4T8DJ MT4LC16M4T8TG VCC 3.3V 3.3V 3.3V 3.3V REFRESH 8K 8K 4K 4K Vss DQ4 DQ3 NC NC


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PDF MT4LC16M4A7 MT4LC16M4T8 096-cycle 32-Pin MT4LC16M4A7 MT4LC16M4T8 MT4LC16M4T8DJ-5
Not Available

Abstract: No abstract text available
Text: MEG x 4 EDO DRAM PART NUMBERS PART NUMBER MT4LC16M4H9DJ-X MT4LC16M4H9DJ-X S MT4LC16M4H9TG-X MT4LC16M4H9TG-X S MT4LC16M4G3DJ-X MT4LC16M4G3DJ-X S MT4LC16M4G3TG-X MT4LC16M4G3TG-X S x = speed REFRESH ADDRESSING , TECHNOLOGY, INC. EDO DRAM MT4LC16M4G3 , MT4LC16M4H9 For the latest data sheet revisions, please , MEG x 4 EDO DRAM FUNCTIONAL BLOCK DIAGRAM MT4LC16M4G3 (13 row addresses) DQO DQ1 DQ2 DQ3 O E# FUNCTIONAL BLOCK DIAGRAM MT4LC16M4H9 (12 row addresses) DQO DQ1 DQ2 DQ3 OE# 16 Meg x 4 EDO DRAM


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PDF MT4LC16M4G3, MT4LC16M4H9 096-cycle 32-Pin
Not Available

Abstract: No abstract text available
Text: CAS#, whichever occurs last. (Refer to the 16 Meg x 4 [ MT4LC16M4H9 ] DRAM data sheet for additional , 1 1 ~ z—s : 12 12 ~z CAS7# U1-U16 = MT4LC16M4H9 AO A1 A2 SAO SA1 , MT4LC16M4H9 iS—Si1 Sr2 A A A O — . U-U2 13 — _ X _ . U-U2 13 8, 16, 32 M eg x 6 4 N o n


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PDF MT8LD864A MT16LD1664A MT32LD3264A 168-Pin 168-pin, 128MB 256MB 096-cycle
Not Available

Abstract: No abstract text available
Text: > U0-U17 = MT4LC16M4H9DJ EDO PAGE MODE, SOJ, 4K REFRESH U0-U17 = MT4LC16M4H9TG EDO PAGE MODE, TSOP, 4K REFRESH E# U0-U17 = MT4LC16M4G3DJ EDO PAGE MODE, SOJ, 8K REFRESH VUU Vss NOTE: | T U0-U17, BUFFERS U0-U17 = MT4LC16M4G3TG EDO PAGE MODE, TSOP, 8K REFRESH U0-U17, BUFFERS 1. All , MT4LC16M4A7DJ EDO PAGE MODE, SOJ, 8K REFRESH U0-U35 = MT4LC16M4A7TG EDO PAGE MODE, TSOP, 8K REFRESH U 0-U 35 , edge of RAS# or CAS#, whichever occurs last. (Refer to the MT4LC16M4H9 DRAM data sheet for additional


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PDF MT18LD MT36LD 168-pin, 128MB 256MB 096-cycle
Not Available

Abstract: No abstract text available
Text: . (Refer to the 16 Meg x 4 [ MT4LC16M4H9 ] DRAM data sheet for additional inform ation on EDO functionality , CAS7# U1-U18 = MT4LC16M4H9 EDO PAGE MODE . U1-U18 n— i r — SAO SA1 Vss T .


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PDF MT9LD872A MT18LD1672A MT36LD3272A 168-pin, 128MB 256MB 096-cycle 168-PIN DF-39 256MB)
Not Available

Abstract: No abstract text available
Text: Example: MT4LC16M4A7DW-7 KEY TIMING PARAMETERS SPEED 'RC 'RAC «PC *AA 90ns 50ns , MT4LC16M4A7 or 4,096 rows by 4,096 colum ns for the MT4LC16M4T8. During READ or WRITE cycles, each location , *CAC -5 -6 -7 PIN ASSIGNMENT (Top View) GENERAL DESCRIPTION The MT4LC16M4A7 and MT4LC16M4T8 , to operate from 3.0V to 3.6V. The MT4LC16M4A7 and MT4LC16M4T8 are functionally organized as 16,777 , MT4LC16M4T8 m ust be re­ freshed periodically in order to retain stored data. MT4LC16M4A7 /TB R«v 11/94


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PDF 096-cycle MT4LC16M4A7DW-7 MT4LC16M4A7/T8 16MEGx4DETAWÂ MT4LC16M4A7ST8 0G11241
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