The Datasheet Archive

Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
MT49H16M18FM-25:B Micron Technology Inc DDR DRAM, 16MX18, CMOS, PBGA144, UBGA-144
MT49H16M18FM-25 IT:B Micron Technology Inc DRAM Chip RLDRAM 288M-Bit 16Mx18 1.8V 144-Pin MBGA Tray
MT49H16M36BM-33:B Micron Technology Inc DDR DRAM, 16MX36, 20ns, CMOS, PBGA144, LEAD FREE, UBGA-144
MT49H16M18FM-33:B Micron Technology Inc DDR DRAM, 16MX18, CMOS, PBGA144, UBGA-144
MT49H16M18CSJ-25:B Micron Technology Inc DDR DRAM, 16MX18, 0.3ns, CMOS, PBGA144, LEAD FREE, FBGA-144
MT49H16M36SJ-18:B Micron Technology Inc DDR DRAM, 16MX36, CMOS, PBGA144, FBGA-144
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Part Manufacturer Supplier Stock Best Price Price Each Buy Part
MT49H16M18BM-25:B Micron Technology Inc Bristol Electronics 8 - -
MT49H16M18BM-33 Micron Technology Inc Bristol Electronics 394 - -
MT49H16M18BM-5:B Micron Technology Inc Avnet - - -
MT49H16M18CFM-33 ES Micron Technology Inc Avnet - - -
MT49H16M18CFM-33 IT TR Micron Technology Inc Avnet - - -
MT49H16M18CFM5 Micron Technology Inc Bristol Electronics 90 - -
MT49H16M18CSJ-25 IT:B Micron Technology Inc Avnet - - -
MT49H16M18FM-33 Micron Technology Inc Bristol Electronics 872 - -
MT49H16M18FM-33 Micron Technology Inc Bristol Electronics 1 - -
MT49H16M18FM-3387-BENCH Micron Technology Inc Bristol Electronics 1 - -
MT49H16M18FM-5 Micron Technology Inc Bristol Electronics 32 - -
MT49H16M18SJ-25 IT:B Micron Technology Inc Avnet 935 - -
MT49H16M18SJ-25:B Micron Technology Inc Avnet 6 - -
MT49H16M36BM33A Micron Technology Inc ComS.I.T. 60 - -
MT49H16M36SJ-18 IT:B Micron Technology Inc Avnet 127 - -
MT49H16M36SJ-18:B Micron Technology Inc Avnet 13 - -
MT49H16M36SJ-25:B Micron Technology Inc Avnet - - -
MT49H16M36SJ-25:B Micron Technology Inc Avnet - $42.86 $36.14
MT49H16M36SJ-25E:B Micron Technology Inc Avnet - - -

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MT49H16M datasheet (83)

Part Manufacturer Description Type PDF
MT49H16M16 Micron REDUCED LATENCY DRAM RLDRAM Original PDF
MT49H16M16FM Micron REDUCED LATENCY DRAM RLDRAM Original PDF
MT49H16M16FM-33 Micron 256Mb RLDRAM Component Original PDF
MT49H16M16FM-33 Micron 1Meg x 32 x 8 banks, DRAM Original PDF
MT49H16M16FM-4 Micron 1Meg x 32 x 8 banks, DRAM Original PDF
MT49H16M16FM-4 Micron 256Mb RLDRAM Component Original PDF
MT49H16M16FM-5 Micron 256Mb RLDRAM Component Original PDF
MT49H16M16FM-5 Micron 1Meg x 32 x 8 banks, DRAM Original PDF
MT49H16M16FM-5 Micron Technology Memory, Integrated Circuits (ICs), IC RLDRAM 256MBIT 5NS 144UBGA Original PDF
MT49H16M16HT-33 Micron 256Mb RLDRAM Component Original PDF
MT49H16M16HT-4 Micron 256Mb RLDRAM Component Original PDF
MT49H16M16HT-5 Micron 256Mb RLDRAM Component Original PDF
MT49H16M16HT-5 IT Micron 256Mb RLDRAM Component Original PDF
MT49H16M16HU-33 Micron 256Mb RLDRAM Component Original PDF
MT49H16M16HU-4 Micron 256Mb RLDRAM Component Original PDF
MT49H16M16HU-5 Micron 256Mb RLDRAM Component Original PDF
MT49H16M18 Micron 288Mb CIO Reduced Latency Original PDF
MT49H16M18BM-18:B Micron Technology Memory, Integrated Circuits (ICs), IC RLDRAM 288MBIT 1.875NS UBGA Original PDF
MT49H16M18BM-25 Micron 288Mb RLDRAM Component Original PDF
MT49H16M18BM-25:B Micron Technology Memory, Integrated Circuits (ICs), IC RLDRAM 288MBIT 2.5NS 144UBGA Original PDF

MT49H16M Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2003 - BA6A

Abstract: marking code d2c smd
Text: Meg x 16 PART NUMBER MT49H8M32FM-xx MT49H16M16FM-xx Options · Clock Cycle Timing 3.3ns (300 MHz , 32ms) · 144-pin, 11mm x 18.5mm µBGA package MT49H8M32 ­ 1 Meg x 32 x 8 Banks MT49H16M16 ­ 2 Meg x 16 , ) Marking -33 -4 -5 MT49H8M32FM General Description MT49H16M16FM FM BM1 NOTES: 1. Contact


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PDF 256Mb: 256Mb 09005aef81121545/source: 09005aef810c0ffc 256Mbx16x32RLDRAM BA6A marking code d2c smd
2002 - 09005aef809f284b

Abstract: No abstract text available
Text: -5 MT49H8M36 MT49H16M18 MT49H32M9 None IT Part Number MT49H8M36FM-xx MT49H16M18FM-xx , 288Mb: x36, x18, x9 2.5V VEXT, 1.8V VDD, HSTL, RLDRAM II Features 288Mb CIO Reduced Latency (RLDRAM® II) MT49H8M36 MT49H16M18 MT49H32M9 Features · 400 MHz DDR operation (800 Mb/s/pin data rate) · Organization 8 Meg x 36, 16 Meg x 18, and 32 Meg x 9 8 banks · Cyclic bank switching for maximum bandwidth · Reduced cycle time (20ns at 400 MHz) · Nonmultiplexed addresses (address multiplexing option


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PDF 288Mb: 288Mb MT49H8M36 MT49H16M18 MT49H32M9 09005aef80a41b46/Source: 09005aef809f284b
2002 - 15READ

Abstract: marking ba5 MT49H8M18C MT49H16M18C
Text: -5 MT49H16M18C None IT Part Number MT49H16M18CHU-xx FM2 BM1,2 HU HT Notes: 1. Contact Micron , 288Mb: 16 Meg x 18 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II Features 288Mb SIO Reduced Latency (RLDRAM®) II MT49H16M18C For the latest data sheet, refer to Micron's Web site: www.micron.com/rldram Features · 400 MHz DDR operation (800 Mb/s/pin data rate) · Organization ­ 16 Meg x 18 separate I/O ­ 8 banks · Cyclic bank switching for maximum bandwidth · Reduced cycle time (20ns at 400 MHz) ·


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PDF 288Mb: 288Mb MT49H16M18C 09005aef80a41b59/Source: 09005aef811ba111 MT49H8M18C 15READ marking ba5 MT49H16M18C
2010 - UniPHY

Abstract: EP4SE530H35C2 PCB electronic components tutorials DDR3 pcb layout UniPHY ddr3 sdram DDR3 embedded system SCHEMATIC MT49H16M36-18 ddr3 ram micron ddr3 DDR3 pcb layout guide
Text: -Mb Micron MT49H16M36-18 533-MHz component. The Stratix III demonstration board is for internal use only , II interface, perform the following steps: 1. In the Presets list, select MT49H16M36-18 and click


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TRACE INVERTER MODEL 2524

Abstract: MT9VDDT3272AG-40B PHY 2078 ddr phy HYB25D25616OBT-5A EP2S60F1020C4 EP2S60F1020C3 K4H561638F-TCCC M381L3223ETM-CCC MT46V16M16TG-5B
Text: No file text available


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2004 - MT49H16M18C

Abstract: No abstract text available
Text: termination (ODT) RTT MT49H16M18C MT49H32M9C Figure 1: 144-Ball FBGA Table 1: Valid Part Numbers DESCRIPTION 16 Meg x 18 RLDRAM II 32 Meg x 9 RLDRAM II PART NUMBER MT49H16M18CFM-xx MT49H32M9CFM-xx , Meg x 9 · Package 144-pin, 11mm x 18.5mm FBGA NOTE: Marking -2.5 -3.3 -5 MT49H16M18CFM


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PDF 288Mb 288Mb MT49H8M18C MT49H16M18C
2004 - MT49H16M18

Abstract: No abstract text available
Text: II PART NUMBER MT49H8M36FM-xx MT49H16M18FM-xx MT49H32M9FM-xx Options · Clock Cycle Timing , VDDQ I/O On-die termination (ODT) RTT MT49H8M36 MT49H16M18 MT49H32M9 Figure 1: 144-Ball FBGA , Package 144-ball FBGA (11mm x 18.5mm) NOTE: Marking -2.5 -3.3 -5 MT49H8M36FM MT49H16M18FM MT49H32M9FM


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PDF 288MB 288Mb 09005aef809f284b MT49H8M36 MT49H16M18
2005 - hspice MT49H16M36

Abstract: MT49H16M36FM MT49H16M36 MT49H32M18FM
Text: ) Marking -18 -25E -25Z -25 -33E -33 MT49H16M36 MT49H32M18 MT49H64M9 None IT Part Number MT49H16M36FM-xx , . PDF: 09005aef81fe35b2/Source: 09005aef81f83d49 MT49H16M36_1.fm - Rev. B 1/06 EN 1 Micron , MT49H16M36_2.fm - Rev. B 1/06 EN 5 Micron Technology, Inc., reserves the right to change products or , become "Don't Care." PDF: 09005aef81fe35b2/Source: 09005aef81f83d49 MT49H16M36_2.fm - Rev. B 1/06 EN , GND. PDF: 09005aef81fe35b2/Source: 09005aef81f83d49 MT49H16M36_2.fm - Rev. B 1/06 EN 7 Micron


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PDF 576Mb: 576Mb MT49H16M36 MT49H32M18 MT49H64M9 09005aef81fe35b2/Source: 09005aef81f83d49 hspice MT49H16M36 MT49H16M36FM MT49H32M18FM
2003 - RLDRAM mt49h

Abstract: MT49H16M18C
Text: 288Mb: x18 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II Features SIO RLDRAM® II MT49H16M18C ­ 16 Meg x 18 x 8 banks Features · 400 MHz DDR operation (800 Mb/s/pin data rate) · 14.4 Gb/s peak bandwidth (x18 at 400 MHz clock frequency) · Organization ­ 16 Meg x 18 separate I/O ­ 8 banks · Cyclic bank switching for maximum bandwidth · Reduced cycle time (20ns at 400 MHz) · Nonmultiplexed addresses (address multiplexing option available) · SRAM-type interface · Programmable READ latency (RL), row cycle time, and


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PDF 288Mb: MT49H16M18C 09005aef80a41b59/Source: 09005aef811ba111 288Mb RLDRAM mt49h MT49H16M18C
2010 - traffic light controller IN JAVA

Abstract: verilog hdl code for parity generator vhdl code for traffic light control sdc 2025 altera CORDIC ip Reed-Solomon Decoder verilog code error correction code in vhdl interlaken verilog code for fir filter pcie Gen2 payload
Text: No file text available


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2005 - Board Design Guideline

Abstract: board design guidelines RLDRAM k4h561638f EP1S60 EP2S15 EP2S30 ep2s60f1020 gx
Text: No file text available


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2006 - RLDRAM

Abstract: MT49H16M18FM-25 MT-49
Text: -bit RLDRAM II device, for example an MT49H16M18FM-25. The read data, DQ[17:9] is captured by QK[1] and is


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2002 - MT49H16M18C

Abstract: No abstract text available
Text: MT49H16M18CFM-xx PDF: 09005aef80a41b59/Source: 09005aef811ba111 MT49H8M18C_1.fm - Rev. G 7/05 EN 1 Micron , 16 Meg x 18 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II Features 288Mb SIO Reduced Latency (RLDRAM®) II MT49H16M18C For the latest data sheet, refer to Micron's Web site: www.micron.com/rldram Features · 400 MHz DDR operation (800 Mb/s/pin data rate) · Organization 16 Meg x 18 separate I/O 8 banks , ) Marking -25 -33 -5 MT49H16M18C None IT FM BM1 Notes: 1. Contact Micron for availability of


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PDF 288Mb MT49H16M18C 09005aef80a41b59/Source: 09005aef811ba111 MT49H8M18C MT49H16M18C
2003 - MT49H16M18C

Abstract: No abstract text available
Text: 288Mb: x18 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II Features SIO RLDRAM® II MT49H16M18C – 16 Meg x 18 x 8 banks Features Options1 • 533 MHz DDR operation (1.067 Gb/s/pin data rate) • 38.4 Gb/s peak bandwidth (x36 at 533 MHz clock frequency) • Organization – 16 Meg x 18 separate I/O – 8 banks • Cyclic bank switching for maximum bandwidth • Reduced cycle time (15ns at 533 MHz) • Nonmultiplexed addresses (address multiplexing option available) • SRAM-type


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PDF 288Mb: MT49H16M18C 09005aef80a41b59/Source: 09005aef811ba111 2003Micron MT49H16M18C
2007 - SMV-R010

Abstract: schematic diagram lcd monitor samsung xc5vlx50tffg1136 4433 mosfet DISPLAYTECH* 64128 Micron TN-47-01 mosfet 4433 smv r010 ML561 370HR
Text: interface using two Micron MT49H16M18BM-25 devices (x18) packaged in a 144-ball PBGA package. They share a


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PDF ML561 UG199 ML561 SMV-R010 schematic diagram lcd monitor samsung xc5vlx50tffg1136 4433 mosfet DISPLAYTECH* 64128 Micron TN-47-01 mosfet 4433 smv r010 370HR
2003 - smd dk qk

Abstract: SMD MARKING CODE ACY smd marking codes BA5 smd marking codes BA2 RLDRAM MT49H16M18C
Text: -2.5 -3.3 -5 MT49H16M18CFM MT49H32M9CFM FM Table 1: Valid Part Numbers PART NUMBER MT49H16M18CFM-xx , VDD, HSTL, SIO, RLDRAM II MT49H16M18C_2.p65 ­ Rev. 2, Pub. 04/03 1 Micron Technology, Inc , , 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II MT49H16M18C_2.p65 ­ Rev. 2, Pub. 04/03 2 Micron , , HSTL, SIO, RLDRAM II MT49H16M18C_2.p65 ­ Rev. 2, Pub. 04/03 3 Micron Technology, Inc., reserves , MT49H16M18C_2.p65 ­ Rev. 2, Pub. 04/03 4 Micron Technology, Inc., reserves the right to change products


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PDF 288Mb 288Mb clo68-3900 MT49H16M18C smd dk qk SMD MARKING CODE ACY smd marking codes BA5 smd marking codes BA2 RLDRAM
2004 - MT49H16M18

Abstract: No abstract text available
Text: II PART NUMBER MT49H8M36FM-xx MT49H16M18FM-xx MT49H32M9FM-xx Options · Clock Cycle Timing , VDDQ I/O On-die termination (ODT) RTT MT49H8M36 MT49H16M18 MT49H32M9 Figure 1: 144-Ball FBGA , Package 144-ball FBGA (11mm x 18.5mm) NOTE: Marking -2.5 -3.3 -5 MT49H8M36FM MT49H16M18FM MT49H32M9FM


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PDF 288Mb 288Mb MT49H8M36 MT49H16M18
2010 - ddr2 ram slot pin detail

Abstract: DDR3 DIMM 240 pinout samsung DDR2 PC 6400 945 MOTHERBOARD CIRCUIT diagram DDR3 pcb layout gigabyte 945 motherboard power supply diagram HPC 932 DDR3 jedec DDR3 ECC SODIMM Fly-By Topology DDR2 sdram pcb layout guidelines
Text: No file text available


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2010 - DDR3 DIMM 240 pinout

Abstract: IC SE110 DDR3 pcb layout ddr2 ram slot pin detail DDR3 sodimm pcb layout ddr3 RDIMM pinout HPC 932 k 2749 circuit diagram of motherboard Micron TN-47-01
Text: No file text available


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2002 - MICRON diode 2u

Abstract: 24256 WR1 marking code MARKING WB1 Micron DDR marking H12 marking WB4 micron power resistor Marking D1c 5256 DRAM 1/transistor BL P65
Text: after the last refresh command) VALID PART NUMBERS PART NUMBER MT49H8M32FM-xx MT49H16M16FM-xx , ADVANCE 256Mb: x16, x32 2.5V VEXT, 1.8V VDD, 1.8V VDDQ, RLDRAM REDUCED LATENCY DRAM (RLDRAM) MT49H8M32 ­ 1 Meg x 32 x 8 banks MT49H16M16 ­ 2 Meg x 16 x 8 banks For the latest data sheet, please refer to the Micron Web site: www.micron.com/dramds FEATURES 144-Ball T-FBGA · 2.5V VEXT, 1.8V VDD , amounts of memory. MT49H8M32FM MT49H16M16FM · Package 144-ball, 11mm x 18.5mm T-FBGA FM


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PDF 256Mb: MT49H8M32 MT49H16M16 144-Ball MT49H8M32 MICRON diode 2u 24256 WR1 marking code MARKING WB1 Micron DDR marking H12 marking WB4 micron power resistor Marking D1c 5256 DRAM 1/transistor BL P65
2002 - transistor SMD DKL

Abstract: BA5 marking Micron DDR marking H12 MARKING SMD x9 smd cod smd code marking CK Marking D1c marking code a02 SMD Transistor marking BAX MT49H8M36
Text: Description MT49H8M36FM-xx MT49H16M18FM-xx MT49H32M9FM-xx PDF: 09005aef80a41b46/Source , 288Mb: x36, x18, x9 2.5V VEXT, 1.8V VDD, HSTL, RLDRAM II Features 288Mb CIO Reduced Latency (RLDRAM® II) MT49H8M36 MT49H16M18 MT49H32M9 For the latest data sheet, refer to Micron's Web site: www.micron.com/rldram Features Figure 1: · 400 MHz DDR operation (800 Mb/s/pin data rate) · , 32 Meg x 9 RLDRAM II Marking -25 -33 -5 MT49H8M36 MT49H16M18 MT49H32M9 None IT FM BM1


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PDF 288Mb: 288Mb MT49H8M36 MT49H16M18 MT49H32M9 09005aef80a41b46/Source: 09005aef809f284b MT49H8M36 transistor SMD DKL BA5 marking Micron DDR marking H12 MARKING SMD x9 smd cod smd code marking CK Marking D1c marking code a02 SMD Transistor marking BAX
2003 - MICRON BGA PART MARKING

Abstract: NF 034 T6N 700 MT49H16M18
Text: 288Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM II Features CIO RLDRAM® II MT49H32M9 ­ 32 Meg x 9 x 8 Banks MT49H16M18 ­ 16 Meg x 18 x 8 Banks MT49H8M36 ­ 8 Meg x 36 x 8 Banks Features · 533 MHz DDR operation (1.067 Gb/s/pin data rate) · 38.4 Gb/s peak bandwidth (x36 at 533 MHz clock frequency) · Organization ­ 32 Meg x 9, 16 Meg x 18, and 8 Meg x 36 · 8 internal banks for concurrent operation and maximum bandwidth · Reduced cycle time (15ns at 533 MHz) · Nonmultiplexed addresses (address


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PDF 288Mb: MT49H32M9 MT49H16M18 MT49H8M36 09005aef80a41b46/Source: 09005aef809f284b MICRON BGA PART MARKING NF 034 T6N 700 MT49H16M18
2004 - MICRON BGA PART MARKING

Abstract: RLDRAM 09005aef809f284b MT49H16M36
Text: 576Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM II Features CIO RLDRAM® II MT49H64M9 ­ 64 Meg x 9 x 8 Banks MT49H32M18 ­ 32 Meg x 18 x 8 Banks MT49H16M36 ­ 16 Meg x 36 x 8 Banks Features · 533 MHz DDR operation (1.067 Gb/s/pin data rate) · 38.4 Gb/s peak bandwidth (x36 at 533 MHz clock frequency) · Organization ­ 64 Meg x 9, 32 Meg x 18, and 16 Meg x 36 I/O ­ 8 banks · Reduced cycle time (15ns at 533 MHz) · Nonmultiplexed addresses (address multiplexing option available) · SRAM-type


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PDF 576Mb: MT49H64M9 MT49H32M18 MT49H16M36 09005aef80a41b46/Source: 09005aef809f284b MICRON BGA PART MARKING RLDRAM MT49H16M36
2004 - smd code marking x18

Abstract: MT49H16M36
Text: 576Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM 2 Features CIO RLDRAM® 2 MT49H64M9 ­ 64 Meg x 9 x 8 Banks MT49H32M18 ­ 32 Meg x 18 x 8 Banks MT49H16M36 ­ 16 Meg x 36 x 8 Banks Features · 533 MHz DDR operation (1.067 Gb/s/pin data rate) · 38.4 Gb/s peak bandwidth (x36 at 533 MHz clock frequency) · Organization ­ 64 Meg x 9, 32 Meg x 18, and 16 Meg x 36 I/O ­ 8 banks · Reduced cycle time (15ns at 533 MHz) · Nonmultiplexed addresses (address multiplexing option available) · SRAM-type


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PDF 576Mb: MT49H64M9 MT49H32M18 MT49H16M36 09005aef80a41b46/Source: 09005aef809f284b smd code marking x18 MT49H16M36
2010 - ddr ram repair

Abstract: dc bfm Silicon Image 1364 Altera CIC interpolation Filter verilog code for fir filter pcie Gen2 payload ModelSim 6.5c Ethernet-MAC using vhdl doorbell project design of dma controller using vhdl
Text: No file text available


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