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MT48LC4M32LFFC-10 Micron Technology Inc New Advantage Corporation 14 - -
MT48LC4M32LFFC-10-REFURB Micron Technology Inc Bristol Electronics 444 - -

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MT48LC4M32LFFC-10 datasheet (3)

Part Manufacturer Description Type PDF
MT48LC4M32LFFC-10 Micron SYNCHRONOUS DRAM Original PDF
MT48LC4M32LFFC-10 Micron 1Meg x 32 x 4 banks 100MHz synchronous DRAM Original PDF
MT48LC4M32LFFC-10IT Micron SYNCHRONOUS DRAM Original PDF

MT48LC4M32LFFC-10 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2003 - MT8LSDT3264HI-133

Abstract: PC133 tsop MT48LC4M32B2TG 8X14 MT48LC4M32B2F5 MT48LC16M16A2TG MT48LC2M32B2TG MT48LC4M16A2TG MT48LC8M32B2 MT48LC8M8A2TG
Text: Mobile SDRAM 64Mb 4 Meg x 16 MT48H4M16LFF4 - 10 , -8 IT 1.8V 4K ­ 54 (8x8) Yes , MT48LC8M16LFFF4 MT48V4M32LFFC MT48V4M32LFF5 MT48LC4M32LFFC MT48LC4M32LFF5 - 10 , -8 IT - 10 , -8 IT - 10 , -8 IT - 10 , -8 IT - 10 , -8 IT - 10 , -8 IT - 10 , -8 IT - 10 , -8 IT - 10 , -8 IT 1.8V 2.5V 2.5V 3.3V , Meg x 32 8 Meg x 32 MT48H16M16LFFG - 10 , -8, -75 IT MT48V16M16LFFG - 10 , -8, -75 IT MT48LC16M16LFFG - 10 , -8, -75 IT MT48H8M32LFF5 - 10 , -8 IT MT48V8M32LFF5 - 10 , -8 IT MT48LC8M32LFF5 - 10 , -8 IT


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PDF 256MB MT8LSDT3264HI-133 PC133 tsop MT48LC4M32B2TG 8X14 MT48LC4M32B2F5 MT48LC16M16A2TG MT48LC2M32B2TG MT48LC4M16A2TG MT48LC8M32B2 MT48LC8M8A2TG
2002 - MT48V

Abstract: No abstract text available
Text: (Ball Down) FF1 FC1 -8 - 10 Configuration Refresh Count Row Addressing Bank Addressing Column , =2* CL=3* -8 - 10 -8 - 10 -8 - 10 125 MHz 100 MHz 100 MHz 83 MHz 50 MHz 40 MHz ­ ­ ­ ­ 19ns 22ns ­ ­ 8ns 8ns , . 5 6 7 8 9 9 9 9 9 10 11 11 12 12 13 14 14 15 15 15 15 15 15 15 15 15 16 16 17 17 18 24 26 28 26 27 , 0 0 1 1 1 0 0 1 0 1 1 1 0 1 1 1 n = A0-A11 (location 0-y) 0-1 1-0 0-1-2-3 1-2-3-0 2-3-0-1 3-0-1-2 , 7-0-1-2-3-4-5-6 Cn, Cn + 1, Cn + 2 Cn + 3, Cn + 4. .Cn - 1, Cn. 0-1 1-0 0-1-2-3 1-0-3-2 2-3-0-1 3-2-1-0


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PDF 128Mb: 096-cycle -40oC MT48LC8M16LFFF, MT48V8M16LFFF 90-pin, 54-ball, MT48V
2001 - MT48LC8M16

Abstract: No abstract text available
Text: VDD Top View (Ball Down) FF1 FC1 -8 - 10 IT Configuration Refresh Count Row Addressing Bank , CLOCK ACCESS TIME GRADE FREQUENCY CL=1* CL=2* CL=3* -8 - 10 -8 - 10 -8 - 10 125 MHz 100 MHz 100 MHz 83 MHz , . 5 6 7 8 9 9 9 9 9 10 11 11 12 12 13 14 14 15 15 15 15 15 15 15 15 15 16 16 17 17 18 24 26 28 26 27 , 1 1 1 n = A0-A11 (location 0-y) 0-1 1-0 0-1-2-3 1-2-3-0 2-3-0-1 3-0-1-2 0-1-2-3-4-5-6-7 , , Cn + 1, Cn + 2 Cn + 3, Cn + 4. .Cn - 1, Cn. 0-1 1-0 0-1-2-3 1-0-3-2 2-3-0-1 3-2-1-0


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PDF 128Mb: 096-cycle MT48LC8M16LFFC, MT48V8M16LFFC MT48LC8M16LFFF, MT48V8M16LFFF, MT48LC4M32LFFC MT48V4E MT48V8M16LFFC-8 MT48LC4M32LFFC-10 MT48LC8M16
2001 - Not Available

Abstract: No abstract text available
Text: (Ball Down) FF1 FC1 -8 - 10 Configuration Refresh Count Row Addressing Bank Addressing Column , CL=1* CL=2* CL=3* -8 - 10 -8 - 10 -8 - 10 125 MHz 100 MHz 100 MHz 83 MHz 50 MHz 40 MHz ­ ­ ­ ­ 19ns 22ns , . Burst Read/Single Write . 5 6 7 8 9 9 9 9 9 10 11 11 12 12 13 , 1 1 1 n = A0-A11 (location 0-y) 0-1 1-0 0-1-2-3 1-2-3-0 2-3-0-1 3-0-1-2 0-1-2-3-4-5-6-7 , , Cn + 1, Cn + 2 Cn + 3, Cn + 4. .Cn - 1, Cn. 0-1 1-0 0-1-2-3 1-0-3-2 2-3-0-1 3-2-1-0


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PDF 128Mb: 096-cycle -40oC MT48LC8M16LFFC, MT48V8M16LFFC MT48V8M16LFFC-8 MT48LC4M32LFFC-10 54-pin, 90-pin,
2002 - 8M16

Abstract: MT48LC4M32LFFC MT48LC8M16LFFF MT48V4M32LFFC MT48V8M16LFFF
Text: Configuration Refresh Count Row Addressing Bank Addressing Column Addressing -8 - 10 Part Number , FREQUENCY CL=1* CL=2* CL=3* ­ ­ ­ ­ 7ns 7ns tRCD tRP 20ns 20ns 20ns 20ns -8 - 10 125 MHz 100 MHz -8 100 MHz ­ 8ns ­ 20ns 20ns - 10 83 MHz ­ 8ns ­ 20ns 20ns -8 50 MHz 19ns ­ ­ 20ns 20ns - 10 40 MHz 22ns ­ ­ , . Burst Read/Single Write . 9 9 9 9 9 10 11 11 12 12


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PDF 128Mb: MT48LC8M16LFFF, MT48V8M16LFFF MT48LC4M32LFFC MT48V4M32LFFC 096-cycle 54-ball, MobileY95W 8M16 MT48LC4M32LFFC MT48LC8M16LFFF MT48V4M32LFFC MT48V8M16LFFF
2002 - 8M16

Abstract: MT48LC4M32LFFC MT48LC8M16LFFF MT48V4M32LFFC MT48V8M16LFFF
Text: - 10 4 (BA0, BA1) 512 (A0­A8) 4 (BA0, BA1) 256 (A0­A7) KEY TIMING PARAMETERS , FREQUENCY CL=1* CL=2* CL=3* ­ ­ ­ ­ 7ns 7ns tRCD tRP 20ns 20ns 20ns 20ns -8 - 10 125 MHz 100 MHz -8 100 MHz ­ 8ns ­ 20ns 20ns - 10 83 MHz ­ 8ns ­ 20ns 20ns -8 50 MHz 19ns ­ ­ 20ns 20ns - 10 40 MHz 22ns ­ ­ , . Burst Read/Single Write . 9 9 9 9 9 10 11 11 12 12


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PDF 128Mb: MT48LC8M16LFFF, MT48V8M16LFFF MT48LC4M32LFFC MT48V4M32LFFC 096-cycle 54-ball, MobileY95W 8M16 MT48LC4M32LFFC MT48LC8M16LFFF MT48V4M32LFFC MT48V8M16LFFF
2001 - MT48LC4M32LFFC

Abstract: MT48LC8M16LFFF MT48V4M32LFFC MT48V8M16LFFF
Text: ) FF1 FC1 Configuration Refresh Count -8 - 10 8 Meg x 16 4 Meg x 32 2 Meg x 16 x 4 banks 1 , 20ns 20ns 20ns -8 - 10 125 MHz 100 MHz -8 100 MHz ­ 8ns ­ 20ns 20ns - 10 83 MHz ­ 8ns ­ 20ns 20ns -8 50 MHz 19ns ­ ­ 20ns 20ns - 10 40 MHz 22ns ­ ­ 20ns 20ns *CL = CAS (READ) latency 128Mb: x16, x32, SDRAM , . Burst Read/Single Write . 9 9 9 9 9 10 11 11 12 12


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PDF 128Mb: MT48LC8M16LFFC, MT48V8M16LFFC MT48LC8M16LFFF, MT48V8M16LFFF, MT48LC4M32LFFC MT48V4M32LFFC MT48LC4M32LFFC-10 54-pin, 90-pin, MT48LC4M32LFFC MT48LC8M16LFFF MT48V4M32LFFC MT48V8M16LFFF
2002 - 4M32

Abstract: 8M16 MT48LC4M32LFFC MT48LC8M16LFFF MT48V4M32LFFC MT48V8M16LFFF
Text: - 10 4 (BA0, BA1) 512 (A0­A8) 4 (BA0, BA1) 256 (A0­A7) KEY TIMING PARAMETERS , FREQUENCY CL=1* CL=2* CL=3* ­ ­ ­ ­ 7ns 7ns tRCD tRP 20ns 20ns 20ns 20ns -8 - 10 125 MHz 100 MHz -8 100 MHz ­ 8ns ­ 20ns 20ns - 10 83 MHz ­ 8ns ­ 20ns 20ns -8 50 MHz 19ns ­ ­ 20ns 20ns - 10 40 MHz 22ns ­ ­ , . Burst Read/Single Write . 9 9 9 9 9 10 11 11 12 12


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PDF 128Mb: MT48LC8M16LFFF, MT48V8M16LFFF MT48LC4M32LFFC MT48V4M32LFFC 096-cycle 54-ball, MobileY95W 4M32 8M16 MT48LC4M32LFFC MT48LC8M16LFFF MT48V4M32LFFC MT48V8M16LFFF
2002 - Not Available

Abstract: No abstract text available
Text: Addressing -8 - 10 Part Number Example: 8 Meg x 16 4 Meg x 32 2 Meg x 16 x 4 banks 1 Meg x 32 x 4 , tRP 20ns 20ns 20ns 20ns -8 - 10 125 MHz 100 MHz -8 100 MHz – 8ns – 20ns 20ns - 10 83 MHz – 8ns – 20ns 20ns -8 50 MHz 19ns – – 20ns 20ns - 10 40 MHz 22ns – – 20ns 20ns *CL = CAS (READ) latency 128Mb , . 9 9 9 9 9 10 11 11 12 12 13 14 14 15 15 15 15 15 15 15 15 15 16 16 17


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PDF 128Mb: MT48LC8M16LFFF, MT48V8M16LFFF MT48LC4M32LFFC MT48V4M32LFFC 64m13 54-ball, MobileY95W
2001 - Not Available

Abstract: No abstract text available
Text: (Ball Down) FF1 FC1 -8 - 10 Configuration Refresh Count Row Addressing Bank Addressing Column , =3* -8 - 10 -8 - 10 -8 - 10 125 MHz 100 MHz 100 MHz 83 MHz 50 MHz 40 MHz ­ ­ ­ ­ 19ns 22ns ­ ­ 8ns 8ns ­ ­ , . Burst Read/Single Write . 5 6 7 8 9 9 9 9 9 10 11 11 12 12 13 , 1 1 1 n = A0-A11 (location 0-y) 0-1 1-0 0-1-2-3 1-2-3-0 2-3-0-1 3-0-1-2 0-1-2-3-4-5-6-7 , , Cn + 1, Cn + 2 Cn + 3, Cn + 4. .Cn - 1, Cn. 0-1 1-0 0-1-2-3 1-0-3-2 2-3-0-1 3-2-1-0


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PDF 128Mb: 096-cycle -40oC MT48LC8M16LFFC, MT48V8M16LFFC MT48LC8M16LFE MT48V8M16LFFC-8 MT48LC4M32LFFC-10 54-pin, 90-pin,
2003 - Not Available

Abstract: No abstract text available
Text: (A0–A8) 256 (A0–A7) Refresh Count -8 - 10 KEY TIMING PARAMETERS None IT ACCESS TIME SPEED CLOCK GRADE FREQUENCY NOTE: 1. x16 Only. 2. x32 Only. -8 - 10 -8 - 10 -8 - 10 , shown in Table 1. 2 M13 M12 M11 M10 M9 M8 13 12 LMR 11 10 9 8 A7 A6 A5 , - All other states reserved 0 TYPE = INTERLEAVED 0-1 0-1 1-0 1-0 0-1-2-3 , CARE UNDEFINED 09005aef808ebf65 128Mbx16x32.fm - Rev. G 3/03 EN 10 Micron Technology, Inc


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PDF 128Mb: MT48LC8M16LFFF, MT48V8M16LFFF MT48LC4M32LFFC, MT48V4M32LFFC 54-Ball 025mm. 09005aef808ebf65 128Mbx16x32
2001 - MT48V8M16LFFF-8

Abstract: MT48LC4M32 MT48V8M16LFFF MT48V8M16LFF4 MT48V4M32LFFC MT48LC8M16LFFF MT48LC8M16LFF4 MT48LC4M32LFFC MT48LC4M32LFF5 MT48G8M16LFFF
Text: (A0­A7) Refresh Count Part Number Example: Table 1: -8 - 10 MT48V8M16LFFF-8 Key Timing Parameters ACCESS TIME SPEED CLOCK GRADE FREQUENCY None IT XT -8 - 10 -8 - 10 -8 - 10 NOTE , 10 /03 EN 1 ©2001 Micron Technology, Inc. All rights reserved. 128Mb: x16, x32 MOBILE SDRAM , . . . .42 09005aef8071a76b MobileY95W_3VTOC.fm - Rev. H 10 /03 EN 2 Micron Technology, Inc , : Figure 4: Figure 5: Figure 6: Figure 7: Figure 8: Figure 9: Figure 10 : Figure 11: Figure 12


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PDF 128Mb: MT48G8M16LFFF, MT48G8M16LFF4, MT48LC8M16LFFF, MT48LC8M16LFF4, MT48V8M16LFF4, MT48V8M16LFFF MT48LC4M32LFFC, MT48LC4M32LFF5, MT48V4M32LFFC, MT48V8M16LFFF-8 MT48LC4M32 MT48V8M16LFFF MT48V8M16LFF4 MT48V4M32LFFC MT48LC8M16LFFF MT48LC8M16LFF4 MT48LC4M32LFFC MT48LC4M32LFF5 MT48G8M16LFFF
2002 - mt3514

Abstract: mt2502 KBPC606 zener+diode+phc+10 B500C1000 b40c3700 diode+skn+50/10 GBU4K KBJ15J KBP208
Text: 40 30 30 30 30 30 5.0 5.0 5.0 5.0 5.0 0.5 0.5 0.5 0.5 0.5 1.0 1.0 1.0 1.0 1.0 0.8 AMPERES / WOB , 50 50 50 50 45 45 45 45 45 45 10 10 10 10 10 10 0.8 0.8 0.8 0.8 0.8 0.8 1.0 1.0 1.0 1.0 1.0 1.0 1.0 AMPERES / WOB B40C1000 B80C1000 B125C1000 B250C1000 B380C1000 B500C1000 100 200 300 600 900 1200 1.0 1.0 1.0 1.0 1.0 1.0 50 50 50 50 50 50 45 45 45 45 45 45 10 10 10 10 10 10 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 AMPERES / DIL DF005 DF01 DF02 DF04 DF06 DF08 DF10 50 100 200 400 600


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PDF B40C800 B80C800 B125C800 B250C800 B380C800 B500C800 45osed KBPC5000GS KBPC5001GS KBPC5002GS mt3514 mt2502 KBPC606 zener+diode+phc+10 B500C1000 b40c3700 diode+skn+50/10 GBU4K KBJ15J KBP208
2003 - GFM 64A

Abstract: GDV 64A GFM 85A 625 GFG 79mcc GHR 26A tvs SMC MARKING 33 TVS SMC GFM 57, TVS GFM 15A
Text: 53.6 61.6 58.8 68.2 65.1 74.8 71.4 82.5 78.8 90.2 10 10 10 10 10 10 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 5.50 5.80 6.05 6.40 6.63 7.02 7.37 7.78 , 37 38 34 35 32 33 29 30 27 28 25 26 23 24 21 22 18 19 17 18 15 16 14 14.5 12.5 13 11.5 12 10 11 9.0 , 143 137 165 158 176 168 187 179 198 189 220 210 242 231 275 263 330 315 385 368 440 420 1.0 1.0 1.0


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PDF DO-41 P4KE10 P4KE10A P4KE11 P4KE11A P4KE12 P4KE12A P4KE13 P4KE13A P4KE15 GFM 64A GDV 64A GFM 85A 625 GFG 79mcc GHR 26A tvs SMC MARKING 33 TVS SMC GFM 57, TVS GFM 15A
2003 - mb101

Abstract: No abstract text available
Text: DB103 200 40 DB104 400 40 DB105 600 40 DB106 800 40 DB107 1000 40 1.0 HDB101G 50 40 HDB102G 100 40 , 5.0 5.0 5.0 5.0 5.0 5.0 5.0 10 10 10 10 10 10 10 5.0 5.0 5.0 5.0 5.0 5.0 5.0 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 0.5 0.5 0.5 0.5 0.5 0.5 0.5 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.1 1.1 1.1 1.1 1.1 1.1 1.1 1.0 1.0 1.0 1.3 1.7 1.7 1.7 1.0 1.0


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PDF MB05M MB10M DB101 DB102 DB103 DB104 DB105 DB106 DB107 HDB101G mb101
2011 - Not Available

Abstract: No abstract text available
Text: -8 RG1676-9 RG1676- 10 RG1676-11 RG1676-12 RG1676-13 RG1676-14 RG1676-15 RG1676-16 RG1676-17 RG1676 , ® RESISTANCE TOLERANCE OHMS % 100 100 10 220 220 100 100 100 220 220 220 220 220 220 220 220 100 220 220 100 10 220 220 220 220 47 47 47 200 100 22 100 50 220 220 220 100 50 50 15 33 15 47 100 220 10 220 100 100 470 220 22 75 47 10 50 100 220 220 220 68 220 50 220 10 820 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10


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PDF RG1676 RG1676 RG1676-1 RG1676-2 RG1676-3 RG1676-4 RG1676-5 RG1676-6 RG1676-7 RG1676-8
2000 - SR1K-2

Abstract: SR1K2 capacitor K460 SR2S14 Z5U Metal Oxide Varistor 155Z sr2k20
Text: CECC 42 000 203 10 /00 SIOV Metal Oxide Varistors HICAP Maximum ratings (TA = 85 °C) Type , 23/­ 0 + 23/­ 0 + 23/­ 0 Max. clamping voltage v i V A 40 5,0 40 10 ,0 40 5,0 40 5,0 40 10 ,0 40 10 ,0 40 10 ,0 58 58 58 58 58 58 58 5,0 10 ,0 5,0 5,0 5,0 10 ,0 10 ,0 C ± 20% Derating V /I , 275 274 274 274 275 275 ± 10 ± 10 ± 10 ± 10 ± 10 ± 10 ± 10 New ordering codes implemented (refer to chapter Varistor Type Cross-Reference List) 1) at 0,5 V 204 10 /00 SIOV Metal Oxide


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PDF
2010 - CL10B105KA8NNN

Abstract: CL31A106KOHNNN CL05B224KQ5NNN
Text: 1.25±0.10 2.00±0.15 2.00±0.20 1.25±0.15 1.25±0.20 5 5 8 C F Q 0.2+0.15/-0.1 10 , High Capacitance Table (X5R) Capacitance (uF) Size(mm) Vr(V) 4 6.3 0402(1005) 10 16 25 4 6.3 10 0603(1608) 16 25 50 4 6.3 10 0805(2012) 16 25 50 6.3 10 1206(3216) 16 25 50 6.3 1210(3225) 10 16 25 0.1 0.22 0.47 1 2.2 4.7 10 22 47 , ) 6.3 0402(1005) 0.3 1 2.2 4.7 10 22 33 47 X6S 10 Part Numbering


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PDF CL31F226ZPHNNN CL31F226ZQHNNN CL32F106ZAHLNN CL32F106ZOELNN CL32F226ZPJNNN CL32F226ZPULNN CL32F476ZQJNNN CL32F107ZQJNNN CL10B105KA8NNN CL31A106KOHNNN CL05B224KQ5NNN
2005 - SMAJ15CA

Abstract: SMAJ24CA SMAJ10C SMAJ10CA SMAJ11C SMAJ11CA SMAJ12C SMAJ12CA SMAJ13C
Text: with a 10 /1000µs waveform * Optimized for LAN protection applications * Low clamping * Very fast , 150 °C Peak Pulse Current on 10 /1000µs waveform (Note 1, Fig. 1) Operating Junction and , . IT (mA) VWM (V) Maximum Reverse Leakage @ VWM IR (µA) SMAJ5.0C 6.40 7.82 10 5.0 1600 41.7 SMAJ5.0CA 6.40 7.25 10 5.0 1600 43.5 9.2 SMAJ6.0C 6.67 8.15 10 6.0 1600 35.1 11.4 SMAJ6.0CA 6.67 7.37 10 6.0 1600


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PDF 188CA DO-214AC) UL94V-O SMAJ78CA SMAJ85A SMAJ188CA SMAJ15CA SMAJ24CA SMAJ10C SMAJ10CA SMAJ11C SMAJ11CA SMAJ12C SMAJ12CA SMAJ13C
2005 - SMCJ10C

Abstract: SMCJ10CA SMCJ11C SMCJ11CA SMCJ12C SMCJ12CA SMCJ13C
Text: * * * * * 0.305(7.75) 0.030(0.76) * 1500W peak pulse power capability with a 10 /1000µs waveform , unless otherwise specified. Rating Symbol Peak Pulse Power Dissipation on 10 /1000ms waveform Peak Pulse Current on 10 /1000µs waveform (1) (2) (1) Typical thermal resistance , Junction to , (V) Maximum Reverse Leakage @ VWM IR (µA) SMCJ5.0C 6.40 7.82 10 5.0 2000 156.3 SMCJ5.0CA 6.40 7.25 10 5.0 2000 163.0 9.2 SMCJ6.0C 6.67 8.15


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PDF 188CA DO-214AB) UL94V-O SMCJ10C SMCJ10CA SMCJ11C SMCJ11CA SMCJ12C SMCJ12CA SMCJ13C
TO-32-070

Abstract: 2SA1678 FC102 2SK1413 Application Notes FC124 2SC3383 2sC4106 application notes 2sk283 2sd313 2SA1416
Text: 50 50 50 50 50 50 50 50 50 Vebo (V) 10 10 10 10 10 10 6 6 10 10 10 10 5 6 5 5 10 6 6 6 6 5 5 5 5 6 6 6 10 10 10 10 5 6 (mA) 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 500 , 250 250 250 250 250 250 200 250 200 250 200 250 200 250 Vce (V) 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 1 0 10 1 0 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 Ic te (mA) 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5


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PDF T0220ML TO-32-070 2SA1678 FC102 2SK1413 Application Notes FC124 2SC3383 2sC4106 application notes 2sk283 2sd313 2SA1416
2004 - BCR141

Abstract: BCR141F BCR141L3 BCR141S BCR141T
Text: 50 Emitter-base voltage VEBO 10 Input on voltage Vi(on) 30 Collector current , = 40 V, IE = 0 Emitter-base cutoff current VEB = 10 V, IC = 0 DC current gain1) IC = 5 mA, VCE = 5 V Collector-emitter saturation voltage1) VCEsat IC = 10 mA, IB = 0.5 mA Input off , Transition frequency IC = 10 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz , 10 2 10 3 - 10 2 IC h FE mA 10 1 10 1 10 0 -1 10 10 0 10 1


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PDF BCR141. BCR141/F/L3 BCR141T/W BCR141S/U EHA07184 EHA07174 BCR141 BCR141F BCR141L3 BCR141S BCR141 BCR141F BCR141L3 BCR141S BCR141T
1Nu5

Abstract: IN418 1Ns4 IN270 1N42 UN309 1N34A 1N46 IN73 1N120
Text: 75 125 50 55 25 70 23 23 90 100 75 60 75 75 75 100 90 100 100 100 100 100 125 20 25 10 1,0 1.0 1.0 1.0 1.0 5 5 7.5 4 3 50 30 10 100 6 10 10 10 25 3 1.0 1.0 1.5 1.5 1.0 5 25 12.7 12.8 3 5 6 35 1000 3 3 10 iö 1.0 1.0 1.0 1.0 1.0 410 1500 500 800 200 50 50 100 50 20 1.0 1.0 1.0 1.0 1.0 5 2.5 5 25 5 80 1500 150 100 10 20 50 50 50 10 1.0 1.0 1.0 1.0 1.0 5 5 4 5 15 7 800 500 500 300 10 iso 150 150 30 1.0 l.Q 1.0 1.0 1.0 15 3.6 4 5 5 300 300 500 800 600 30 75 75 100


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PDF 1N34A 1n38a 1n38b 1n52a 1N55B 1n56a 1n57a 1n58a 1n60a 1n63a 1Nu5 IN418 1Ns4 IN270 1N42 UN309 1N34A 1N46 IN73 1N120
SMBJ15A

Abstract: SMBJ120A SMBJ28A SMBJ12A SMBJ6.5A SMBJ64A SMBJ100A SMBJ58A SMBJ17A SMBJ170A
Text: Power : 600 W FEATURES : * 600W peak pulse power capability with a 10 /1000µs waveform * Excellent , Peak Pulse Power Dissipation on 10 /1000μs waveform Peak Pulse Current on 10 /1000μs waveform (1 , 9.0 9.0 10 10 11 11 12 12 13 13 14 14 15 15 16 16 17 17 18 18 20 20 22 22 24 , 50 10 10 5.0 5.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 62.5 65.2


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PDF TH97/2478 TH09/2479 TH07/1033 DO-214AA) UL94V-0 10/1000ms. SMBJ15A SMBJ120A SMBJ28A SMBJ12A SMBJ6.5A SMBJ64A SMBJ100A SMBJ58A SMBJ17A SMBJ170A
2003 - BAS170W

Abstract: BAS70-04S marking 74s BAS70-02W BAS70-02L BAS70 BAS70-04T Puls BAS70-05 BAS70-05W
Text: - 0.1 µA DC Characteristics Breakdown voltage V(BR) I(BR) = 10 µA Reverse current IR VR = 50 V Forward voltage mV VF IF = 1 mA 300 375 410 IF = 10 mA , rf - 34 - - - 100 ps Forward voltage matching1) VF IF = 10 mA AC Characteristics Diode capacitance VR = 0 , f = 1 MHz Forward resistance IF = 10 mA, f = 10 kHz , = f = 10 kHz BAS 70W/BAS 170W 2.0 CT f = 1MHz (VR) EHB00044 pF (IF


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PDF BAS70. BAS170W BAS70-02L BAS70-02W BAS70 BAS70-04 BAS70-04T BAS70-04W BAS70-04S BAS170W BAS70-04S marking 74s BAS70-02W BAS70-02L BAS70 BAS70-04T Puls BAS70-05 BAS70-05W
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