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specifications of ic 8038

Abstract: ic LC 7815
Text: TOSHIBA TENTATIVE TOSHIBA TRANSISTOR MT3S03T V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIOS MT3S03T SYMBOL VCBO VCEO Ve b o ic :B PC Tj Tstg RATING 10 5 2 100 10 100 125 -5 5 -1 2 5 , 1/4 - TO SHIBA MT3S03T ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL , 6 8 10 COLLECTOR-EMITTER VOLTAGE VCE (V) 1999 02-19 2/4 - TOSHIBA MT3S03T fT , - TOSHIBA MT3S03T MT3S03T VcE = 1 V, lc = 5 mA, f = 100-2000 MHz Step 100 MHz frequency


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PDF MT3S03T specifications of ic 8038 ic LC 7815
MT3S03T

Abstract: No abstract text available
Text: TO SHIBA TENTATIVE TOSHIBA TRANSISTOR MT3S03T VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIOS MT3S03T SYMBOL VCBO v CEO v EBO ic Ib Pc Tj Tstg RATING 10 5 2 100 10 100 125 -55-125 SILICON NPN , MT3S03T ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC Collector Cut-off Current Emitter , 1999 03-16 - 2/4 TO SH IBA MT3S03T fT - ic NF - Iß > < o iz; w £ MT3S03T MT3S03T VcE = 1 V, lc = 5 mA, f = 100-2000 MHz Step 100 MHz frequency (MHz) 100 200


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PDF MT3S03T IS21I2 MT3S03T
Not Available

Abstract: No abstract text available
Text: TO SHIBA TENTATIVE MT3S03T TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT3S03T V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIOS Unit in mm 1.2 ± 0.05 • Low Noise , herein is subject to change w ithout notice. 1999 03-16 - 1/4 TO SHIBA MT3S03T ELECTRICAL , SHIBA MT3S03T NF - le ÍT - IC X O î* fc < !z Ü £ W £ MT3S03T MT3S03T VC E = 1 V, le = 5 mA, f = 10 0 -2 0 0 0 MHz Step 100 MHz


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PDF MT3S03T
Not Available

Abstract: No abstract text available
Text: TOSHIBA MT3S03T S I L I C O N NPN E P I T A X I A L P L A N A R TYPE MT 3 S 0 3 T UNIT : m m S i !< - « ! t, OVHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS. Q; · : Low Noise:Figure:NF=1.4dB(at f=2GHz) · : High Gain:Gain=8dB(at f=2GHz) o


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PDF MT3S03T 2000MHz
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Abstract: No abstract text available
Text: T O S H IB A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT6L52AE MT6L52AE VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Unit in mm · TWO devices are built in to the super-thin and extreme super mini (6 pins) package : ES6 in O o O o p in in V 2 - F -O 1 1 1 6 ö T 5 MOUNTED DEVICES o o Ql : SSM (TESM) Q2 : SSM (TESM) Three-pins (SSM/TESM) mold MT3S03S MT3S04AS ( MT3S03T ) (MT3S04AT) products are corresponded. M AXIM UM RATINGS (Ta = 25°C) % 1.210.05


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PDF MT6L52AE MT3S03S MT3S04AS MT3S03T) MT3S04AT)
Not Available

Abstract: No abstract text available
Text: T O S H IB A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT6L52AE MT6L52AE VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Unit in mm · TWO devices are built in to the super-thin and extreme super mini (6 pins) package : ES6 in O o O o p in in V 1 -O 1 T 6ö 5 MOUNTED DEVICES o o Ql : SSM (TESM) Q2 : SSM (TESM) Three-pins (SSM/TESM) mold MT3S03S MT3S04AS ( MT3S03T ) (MT3S04AT) products are corresponded. M AXIM UM RATINGS (Ta = 25°C) % 2 - F 1


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PDF MT6L52AE MT3S03S MT3S04AS MT3S03T) MT3S04AT)
2000 - 2SK3075 equivalent

Abstract: 10 ghz transistor MT3S04T 2SK3078 MT6P06E 3SK320 transistor 2SC5066 MT6P03AE 2SC5066 24lu1
Text: 2SC5261FT 2SC5322FT MT3S04T MT3S06T, MT3S03T MT3S07T s Pin s TU6 Developed as the US6 (2.0


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PDF 2SC5065 2SC5085 2SC5090 2SC5095 MT3S06U MT3S07U 2SC5066 2SC5086 2SC5091 2SC5096 2SK3075 equivalent 10 ghz transistor MT3S04T 2SK3078 MT6P06E 3SK320 transistor 2SC5066 MT6P03AE 2SC5066 24lu1
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