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MT3S03AT datasheet (2)

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MT3S03AT Toshiba Scan PDF
MT3S03AT Toshiba TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE Scan PDF

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IC 7486

Abstract: 534-1 MAG 14241 MT3S03AT ic 7815 f 9444 TA 7129 13765
Text: MT3S03AT NPN MT3S03AT VHF~UHF · · : mm : NF = 1.4dB (), |S21e|2 = 8dB () (f = 2 , 2-1B1A : 2.2mg () 1 2010-02-24 MT3S03AT (Ta = 25 , 2 2010-02-24 MT3S03AT 3 2010-02-24 MT3S03AT MT3S03AT : VCE = 1 V, IC = 5 mA, f , 2010-02-24 MT3S03AT : VCE = 2 V, IC = 20 mA, f = 100~2000 MHz Step 100 MHz S11 S21 S12 S21 , 65.14 0.269 66.91 0.044 -110.52 7.61 5 2010-02-24 MT3S03AT · · ·


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PDF MT3S03AT IC 7486 534-1 MAG 14241 MT3S03AT ic 7815 f 9444 TA 7129 13765
2006 - transistor 14315

Abstract: 14315
Text: MT3S03AT TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S03AT VHF~UHF Band Low Noise , gain dB Noise figure dB 1 2003-08-08 MT3S03AT Electrical Characteristics (Ta = 25 , . Please handle with caution. 2 2003-08-08 MT3S03AT 3 2003-08-08 MT3S03AT MT3S03AT , 6.38 6.00 5.63 5.34 2 4 2003-08-08 MT3S03AT VCE = 2 V, IC = 20 mA, f = 100~2000 MHz Step , 2003-08-08 MT3S03AT 6 2003-08-08 Toshiba


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PDF MT3S03AT transistor 14315 14315
2003 - working of ic 8038

Abstract: marking 5241 MT3S03AT ic 7815 IC 7486 specifications of ic 8038 8250 bridge
Text: MT3S03AT Preliminary TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S03AT VHF , GHz 1.4 2.2 S21e2 (1) 2 1 Unit GHz dB dB 2003-08-08 MT3S03AT , This device electrostatic sensitivity. Please handle with caution. 2 2003-08-08 MT3S03AT 3 2003-08-08 MT3S03AT MT3S03AT VCE = 1 V, IC = 5 mA, f = 100~2000 MHz Step 100 MHz Frequency S11 , 0.234 60.42 0.166 -96.54 5.34 4 2003-08-08 MT3S03AT VCE = 2 V, IC = 20 mA, f =


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PDF MT3S03AT 002oducts working of ic 8038 marking 5241 MT3S03AT ic 7815 IC 7486 specifications of ic 8038 8250 bridge
2007 - specifications of ic 8038

Abstract: working of ic 8038 for semiconductor IC 7106
Text: MT3S03AT TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S03AT VHF~UHF Band Low Noise , figure dB 1 2007-11-01 MT3S03AT Electrical Characteristics (Ta = 25°C) Characteristics , . Please handle with caution. 2 2007-11-01 MT3S03AT 3 2007-11-01 MT3S03AT MT3S03AT , 6.38 6.00 5.63 5.34 2 4 2007-11-01 MT3S03AT VCE = 2 V, IC = 20 mA, f = 100~2000 MHz Step , 2007-11-01 MT3S03AT RESTRICTIONS ON PRODUCT USE · The information contained herein is subject to


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PDF MT3S03AT specifications of ic 8038 working of ic 8038 for semiconductor IC 7106
2010 - of ic 8038

Abstract: MT3S03AT IC 7486 ic 7815
Text: MT3S03AT TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S03AT VHF~UHF Band Low Noise , rate, etc). Marking 1 2010-02-24 MT3S03AT Microwave Characteristics (Ta = 25 , sensitive to electrostatic discharge. Please handle with caution. 2 2010-02-24 MT3S03AT 3 2010-02-24 MT3S03AT MT3S03AT VCE = 1 V, IC = 5 mA, f = 100 to 2000 MHz Step 100 MHz Frequency S11 , 60.42 0.166 -96.54 5.34 4 2010-02-24 MT3S03AT VCE = 2 V, IC = 20 mA, f = 100 to 2000


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PDF MT3S03AT of ic 8038 MT3S03AT IC 7486 ic 7815
Not Available

Abstract: No abstract text available
Text: TO SH IBA TENTATIVE MT3S03AT TOSHIBA TRANSISTOR VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIOS MT3S03AT SYMBOL VCBO v CEO v EBO ic Ib Pc Tj Tstg RATING 10 5 2 40 10 100 125 -55-125 UNIT V V , notice. 2000 09-01 1/4 - TO SH IBA MT3S03AT ELECTRICAL CHARACTERISTICS (Ta = 25 , 09-01 2/4 - TO SH IBA MT3S03AT fT - IC NF - Iß >< o iz; w £ £ o tí MT3S03AT


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PDF MT3S03AT IS21I2
Not Available

Abstract: No abstract text available
Text: TO SH IBA TENTATIVE MT3S03AT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIOS MT3S03AT Unit in mm 1.2 ± 0 .0 5 0.8 ± 0.05 Low Noise , contained herein is subject to change without notice. 2 000 01-18 - 1/4 TO SH IBA MT3S03AT , TO SH IBA MT3S03AT fT - IC NF - Iß > < o iz; w £ MT3S03AT MT3S03AT VcE = 1 V, lc = 5 mA, f = 100-2000 MHz Step 100 MHz frequency (MHz) 100 200 300 400


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PDF MT3S03AT IS21I2
working of ic 8038

Abstract: working of IC 7486 8250 ic pin for semiconductor IC 7106 MT3S03AT IC 7486 ic 8038 specifications of ic 8038
Text: TOSHIBA MT3S03AT TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT3S03AT VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIOS • Low Noise Figure : NF = 1.4 dB (at f = 2 GHz) • High , MT3S03AT ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT , MT3S03AT fT - ic nf - ic f = 2 GHz Ta = 25°C 3 V / s , TOSHIBA MT3S03AT MT3S03AT VCE = 1 V, lc = 5 mA, f = 100-2000 MHz Step 100 MHz frequency Sll S21 S12


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PDF MT3S03AT working of ic 8038 working of IC 7486 8250 ic pin for semiconductor IC 7106 MT3S03AT IC 7486 ic 8038 specifications of ic 8038
MT3S03AT

Abstract: 014E 200E 800E
Text: MT3S03AT SPICE parameters (UCB SPICE2G6) 20020225 NET LIST .SUBCKT Re1 Re2 Le1 Le2 Ceg1 Ceg2 Rb1 Rb2 Lb1 Lb2 Cbg1 Cbg2 Rc1 Rc2 Lc1 Lc2 Ccg1 Ccg2 Cbe1 Cbc1 Cce1 Cbe2 Le3 Re3 Lb3 Rb3 Cbe3 Cce2 Cbc2 MT3S03AT 3 18 9 19 6 18 6 19 6 0 9 0 2 15 8 16 5 15 5 16 5 0 8 0 1 13 7 14 4 13 4 14 4 0 7 0 5 6 7 8 7 9 8 9 9 20 12 20 8 17 11 17 11 12 7 12 7 11 123 2.014E-02 2.014E-02 2.260E-10 2.260E-10 1.800E-13 1.346E-14 2.014E-02 2.014E-02


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PDF MT3S03AT MT3S03AT 014E-02 260E-10 800E-13 346E-14 014E 200E 800E
2000 - 2SK3075 equivalent

Abstract: 10 ghz transistor MT3S04T 2SK3078 MT6P06E 3SK320 transistor 2SC5066 MT6P03AE 2SC5066 24lu1
Text: 2SC5111FT 2SC5086FT 2SC5464FT 2SC5066FT 2SC5108FT MT3S03AT MT3S04AT MT3S07T 2SC5087 2SC5088 , 2SC5066 2SC5464 MT3S03AS MT3S04AS MT3S07S 2SC5086FT 2SC5066FT 2SC5464FT MT3S03AT MT3S04AT , 2SC5086FT 2SC5086 2SC5086FT 2SC5464 2SC5464FT MT3S04AS MT3S04AT MT3S03AS MT3S03AT VCO (2 , operating device MT3S03A MT3S03AU MT3S03AS MT3S03AT MT4S03A MT4S03AU - fT = , 2SC5098 MT3S03A MT3S03AU MT3S03AS MT3S03AT MT4S03A MT4S03AU MT3S06U MT3S06S MT3S06T MT4S06


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PDF 2SC5065 2SC5085 2SC5090 2SC5095 MT3S06U MT3S07U 2SC5066 2SC5086 2SC5091 2SC5096 2SK3075 equivalent 10 ghz transistor MT3S04T 2SK3078 MT6P06E 3SK320 transistor 2SC5066 MT6P03AE 2SC5066 24lu1
sec 2sc5088

Abstract: samsung UHF/VHF TV Tuner RF Bipolar Transistor transistor 2SC5066 2SC5066 datasheet 2SC5088 SEC MT6L04AE AU82 MT6L63FS JDV2S71U
Text: MT3S03AT MT3S06T MT3S07T MT3S14T MT3S35T MT3S36T MT3S37T MT3S41T fSM USQ 2SC5087 2SC5092 , 2SC5464FT 2SC5066FT 2SC5108FT 2SC5111FT MT3S03AT MT3S04AT MT3S05T MT3S06T MT3S07T MT3S11T MT3S12T , MT3S03AT MT3S06T MT3S07T MT3S14T* MT3S35T MT3S36T MT3S37T MT3S41T fSM USQ Bipolar , Bipolar transistor MT4S100T MT4S101T 2SC5317FT 2SC5086FT MT3S03AT MT3S04AT MT3S05T MT3S06T , S21e 2-IC 12 |S21e|2 ­ Insertion Gain (dB) MT3S03AT MT3S04AT MT3S05T MT3S06T 16 3


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PDF BCE0003D S-167 BCE0003E sec 2sc5088 samsung UHF/VHF TV Tuner RF Bipolar Transistor transistor 2SC5066 2SC5066 datasheet 2SC5088 SEC MT6L04AE AU82 MT6L63FS JDV2S71U
transistor 2SC5066

Abstract: BFP620 2SC5067 2sc5066 UPC2709 2SC5066 data sheet 2SC5066 datasheet NESG260234 thn6601b BFP450
Text: MT4S101U 2SC5508 2SC5509 2SC5010 2SC5435 2SC5317 2SC5317FT 2SC5316 MT3S03AS MT3S03AT MT3S03AU


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PDF THN5601B THN5702F THN6601B THN6701B THN405Z THN420Z THN450Z THN520Z THN620Z THN640Z transistor 2SC5066 BFP620 2SC5067 2sc5066 UPC2709 2SC5066 data sheet 2SC5066 datasheet NESG260234 thn6601b BFP450
MT6L58AE

Abstract: MT3S03AS MT3S03AT MT3S06S MT3S06T
Text: MT6L58AE NPN MT6L58AE VHF~UHF /· · : mm · (6 ) ES6 2 Q1: SSM (TESM) Q2: SSM (TESM) MT3S06S MT3S03AS (MT3S06T) ( MT3S03AT ) 3 (SSM/TESM) (Ta = 25°C) Q1 Q2 VCBO 10 10 V VCEO 5 5 V VEBO 1.5 2 V IC 15 40 mA IB 7 10 ES6 mA PC ( 1) 100 JEDEC JEITA 2-2N1C : 3 mg () mW Tj


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PDF MT6L58AE MT3S06S MT3S03AS MT3S06T) MT3S03AT) MT6L58AE MT3S03AS MT3S03AT MT3S06S MT3S06T
MT6C03AE

Abstract: MT3S03AS MT3S03AT
Text: MT6C03AE NPN MT6C03AE VHF~UHF · · : mm · (6 ) ES6 2 Q1/Q2: SSM (TESM) 3 (SSM/TESM) MT3S03AS ( MT3S03AT ) (Ta = 25°C) Q1/Q2 VCBO 10 V VCEO 5 V VEBO 2 V IC 40 mA JEDEC IB 10 mA JEITA 100 mW PC ( 1) ES6 2-2N1B : 3 mg () Tj 125 °C


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PDF MT6C03AE MT3S03AS MT3S03AT) MT6C03AE MT3S03AS MT3S03AT
Not Available

Abstract: No abstract text available
Text: BASE 2 1 4. COLLECTOR 2 25. BASE 1 6. COLLECTOR 1 H MT3S03AS ( MT3S03AT ) -H. j JEDEC EIAJ


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PDF MT6P03AT
Not Available

Abstract: No abstract text available
Text: TO SH IBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT6P03AE MT6P03AE VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Unit in mm · TWO devices are built in to the super-thin and extreme super mini (6 pins) package : ES6 Q1/Q2 : SSM (TESM) B1.210.05 5 MOUNTED DEVICES Three-pins (SSM/TESM) mold products are MT3S03AS ( MT3S03AT ) corresponded. M AXIM UM RATINGS (Ta = 25°C) 1.610.05 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector


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PDF MT6P03AE MT3S03AS MT3S03AT)
Not Available

Abstract: No abstract text available
Text: TO SH IBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT6P03AE MT6P03AE VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Unit in mm · TWO devices are built in to the super-thin and extreme super mini (6 pins) package : ES6 5 MOUNTED DEVICES Three-pins (SSM/TESM) mold products are MT3S03AS ( MT3S03AT ) corresponded. M AXIM UM RATINGS (Ta = 25°C) Q1/Q2 : SSM (TESM) B1.210.05 1.610.05 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector


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PDF MT6P03AE MT3S03AS MT3S03AT)
2SC5256

Abstract: MT3S03AS MT3S03AT MT6L51AT
Text: TOSHIBA MT6L51AT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT6L51 AT VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • TWO devices are built in to the super-thin and ultra super mini (6 pins) package : TU6 MOUNTED DEVICES Unit in mm Q1 : SSM (TESM) Q2 : SSM (TESM) Three-pins (SSM/TESM) mold products are corresponded. 2SC5256 (5256FT) MT3S03AS ( MT3S03AT ) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL Q1 Q2 UNIT Collector-Base Voltage vCBO 15 10 V Collector-Emitter


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PDF MT6L51AT MT6L51 2SC5256 5256FT) MT3S03AS MT3S03AT) 2SC5256 MT3S03AS MT3S03AT MT6L51AT
Not Available

Abstract: No abstract text available
Text: TO SH IBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT6P03AE MT6P03AE VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Unit in mm · TWO devices are built in to the super-thin and extreme super mini (6 pins) package : ES6 Q1/Q2 : SSM (TESM) B1.210.05 5 MOUNTED DEVICES Three-pins (SSM/TESM) mold products are MT3S03AS ( MT3S03AT ) corresponded. M AXIM UM RATINGS (Ta = 25°C) 1.610.05 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector


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PDF MT6P03AE MT3S03AS MT3S03AT)
Not Available

Abstract: No abstract text available
Text: TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT6L58AE MT6L58AE VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Unit in mm · TWO devices are built in to the super-thin and extreme super mini (6 pins) package : ES6 in in O O o o p in V -F % 2 -O 1 1 1 6ö j5 MOUNTED DEVICES o o Q l : SSM (TESM) Q2 : SSM (TESM) Three-pins (SSM /T E SM ) mold products are corresponded. MT3S06S (MT3S06T) MT3S03AS ( MT3S03AT ) IT ) O +1 in 1 . 2 1 0 .0 5 q o +1 o " I o 1 . 6


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PDF MT6L58AE MT3S06S MT3S06T) MT3S03AS MT3S03AT)
MT3S03AS

Abstract: MT3S03AT MT6C03AE
Text: TOSHIBA MT6C03AE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT6C03AE VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • TWO devices are built in to the super-thin and extreme super mini (6 pins) package : ES6 MOUNTED DEVICES Q1/Q2 : SSM (TESM) Three-pins (SSM/TESM) mold products are corresponded. MT3S03AS ( MT3S03AT ) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL Q1/Q2 UNIT Collector-Base Voltage VCBO 10 V Collector-Emitter Voltage vCEO 5 V Emitter-Base Voltage vEBO 2 V Collector


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PDF MT6C03AE MT3S03AS MT3S03AT) MT3S03AS MT3S03AT MT6C03AE
2005 - IC MARKING 1005 5 pin

Abstract: No abstract text available
Text: products MT3S06T (MT3S06FS) MT3S03AT (MT3S03AFS) 0.48 Q1 Q2 +0.02 -0.04 Maximum Ratings (Ta =


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PDF MT6L58AFS MT3S06T MT3S06FS) MT3S03AT MT3S03AFS) IC MARKING 1005 5 pin
MT3S03

Abstract: No abstract text available
Text: MT6P03AE TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6P03AE VHF~UHF Band Low Noise Amplifier Applications Unit: mm · Two devices are built in to the super-thin and extreme super mini (6 pins) package: ES6 Mounted Devices Q1/Q2: SSM (TESM) Three-pins (SSM/TESM) mold products are corresponded. MT3S03AS ( MT3S03AT ) Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction


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PDF MT6P03AE MT3S03AS MT3S03AT) MT3S03
2007 - MT6L58AT

Abstract: No abstract text available
Text: MT6L58AT TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L58AT VHF~UHF Band Low Noise Amplifier Applications · Two devices are built in to the super-thin and ultra super mini (6 pins) package: TU6 Unit: mm Mounted Devices Q1: SSM (TESM) Three-pins (SSM/TESM) mold products are corresponded. MT3S06S (MT3S06T) Q2: SSM (TESM) MT3S03AS ( MT3S03AT ) Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector


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PDF MT6L58AT MT3S06S MT3S06T) MT3S03AS MT3S03AT) MT6L58AT
Not Available

Abstract: No abstract text available
Text: TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT6L58AE MT6L58AE VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Unit in mm · TWO devices are built in to the super-thin and extreme super mini (6 pins) package : ES6 in in O O o o p in V -F 2 -O 1 1 1 T 5 6ö MOUNTED DEVICES o o Q l : SSM (TESM) Q2 : SSM (TESM) Three-pins (SSM /T E SM ) mold products are corresponded. MT3S06S (MT3S06T) MT3S03AS ( MT3S03AT ) IT ) O +1 in % 1 . 2 1 0 .0 5 q o +1 o " I 1 . 6 1 0


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PDF MT6L58AE MT3S06S MT3S06T) MT3S03AS MT3S03AT)
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