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MSM5118165B-60JS datasheet (2)

Part ECAD Model Manufacturer Description Type PDF
MSM5118165B-60JS MSM5118165B-60JS ECAD Model OKI Electronic Components 1,048,576-word x 16-bit dynamic RAM Original PDF
MSM5118165B-60JS MSM5118165B-60JS ECAD Model OKI Semiconductor 1,048,576-Word x 16-Bit DYNAMIC RAM: FAST PAGE MODE TYPE WITH EDO Scan PDF

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MSM5118165B

Abstract: SOJ42
Text: No file text available


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PDF J2G0055-17-41 MSM5118165B MSM5118165B 576-Word 16-Bit MSM5118165BCMOS1 42CMOS 42SOJ50/44TSOP 02416ms 42400milSOJ SOJ42
MSM5118165B

Abstract: TSOP 86 Package
Text: No file text available


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PDF E2G0055-17-41 MSM5118165B_ 576-Word 16-Bit TheMSM5118165B MSM5118165B 42-pin TSOP 86 Package
1999 - MSM5118165B

Abstract: SOJ42-P-400-1
Text: No file text available


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PDF E2G0055-17-41 MSM5118165B 576-Word 16-Bit MSM5118165B SOJ42-P-400-1
5118165

Abstract: No abstract text available
Text: No file text available


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PDF MSM5118165B_ 576-Word 16-Bit TheMSM5118165B MSM5118165B 42-pin 50/44-pin 5118165
Not Available

Abstract: No abstract text available
Text: No file text available


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PDF MSM5118165 576-Word 16-Bit MSM5118165B 42-pin 50/44-pin
1997 - ESA2UN3282B-60JS-S

Abstract: EDO RAM drawing
Text: July 1997 Revision 1.0 data sheet ESA2UN3282B- 60JS -S 8MByte (2M x 32) CMOS EDO DRAM Module General Description The ESA2UN3282B- 60JS -S is a high performance, EDO (Extended Data Out) 8 , July 1997 Revision 1.0 ESA2UN3282B- 60JS -S Functional Diagram CAS3* CAS2* CAS1* CAS0* RAS0 , Mikroelektronik GmbH July 1997 Revision 1.0 ESA2UN3282B- 60JS -S Pin Name A0-A10 A0~A9 DQ0~DQ31 CAS0 , 1.0 ESA2UN3282B- 60JS -S DC CHARACTERISTICS (VCC = 5.0V±10%, VSS = 0V, TA = 0 to +70 °C) 60


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PDF ESA2UN3282B-60JS-S ESA2UN3282B-60JS-S 32bits, 72-pin, ESA2UN3282B MB8117805B-60PJ MP-DRAMM-DS-20546-7/97 EDO RAM drawing
1997 - 1Mx4 EDO RAM

Abstract: ESA1UN3241-60JS-S
Text: July 1997 Revision 1.0 data sheet ESA1UN3241- 60JS -S 4MByte (1M x 32) CMOS EDO DRAM Module General Description The ESA1UN3241- 60JS -S is a high performance, EDO (Extended Data Out) 4 , 1.0 ESA1UN3241- 60JS -S Functional Diagram CAS3* CAS2* CAS1* CAS0* RAS0* 1M x 8 Block DQ0 , Fujitsu Microelectronics, Inc./Fujitsu Mikroelektronik GmbH July 1997 Revision 1.0 ESA1UN3241- 60JS , 3 July 1997 Revision 1.0 ESA1UN3241- 60JS -S DC CHARACTERISTICS (VCC = 5.0V±10%, VSS = 0V


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PDF ESA1UN3241-60JS-S ESA1UN3241-60JS-S 32bits, 72-pin, MB814405C-60PJ 1Mx4 EDO RAM
1997 - 1Mx4 EDO RAM

Abstract: ESA1UN3241A-60JS-S
Text: July 1997 Revision 1.0 data sheet ESA1UN3241A- 60JS -S 4MByte (1M x 32) CMOS EDO DRAM Module General Description The ESA1UN3241A- 60JS -S is a high performance, EDO (Extended Data Out) 4 , GmbH 1 July 1997 Revision 1.0 ESA1UN3241A- 60JS -S Functional Diagram CAS3* CAS2* CAS1 , Revision 1.0 ESA1UN3241A- 60JS -S Pin Name A0~A9 DQ0~DQ31 CAS0*~CAS3* RAS0*, RAS2* Row and Column , Mikroelektronik GmbH 3 July 1997 Revision 1.0 ESA1UN3241A- 60JS -S DC CHARACTERISTICS (VCC = 5.0V±10


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PDF ESA1UN3241A-60JS-S ESA1UN3241A-60JS-S 32bits, 72-pin, MB814405D-60PJ MP-DRAMM-DS-20545-7/97 1Mx4 EDO RAM
1997 - 1Mx4 dram simm

Abstract: 1Mx4 EDO RAM ESA2UN3241A-60JS-S
Text: July 1997 Revision 1.0 ESA2UN3241A- 60JS -S Functional Diagram CAS1* CAS0* RAS0* RAS1 , Fujitsu Microelectronics, Inc./Fujitsu Mikroelektronik GmbH July 1997 Revision 1.0 ESA2UN3241A- 60JS , Microelectronics, Inc./Fujitsu Mikroelektronik GmbH 3 July 1997 Revision 1.0 ESA2UN3241A- 60JS -S DC , , Inc./Fujitsu Mikroelektronik GmbH July 1997 Revision 1.0 ESA2UN3241A- 60JS -S AC , Mikroelektronik GmbH 3, 11 12 5 July 1997 Revision 1.0 ESA2UN3241A- 60JS -S 1. An initial pulse


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PDF ESA2UN3241A- 32bits, 72-pin, MB814405D- 60/70ns) MP-DRAMM-DS-20548-7/97 1Mx4 dram simm 1Mx4 EDO RAM ESA2UN3241A-60JS-S
Not Available

Abstract: No abstract text available
Text: 1997 Revision 1.0 ESA2UN3241- 60JS -S c a s i* CAS2* CASO* RASO* 1 M x8 B lock R A S I , , Inc./Fujitsu Mikroelektronik GmbH July 1997 Revision 1.0 ESA2UN3241- 60JS -S Pin Name A 0 -A 9 , 0V, TA = 0 to +70 °C) 60 July 1997 Revision 1.0 ESA2UN3241- 60JS -S 70 Parameter O p e ra , Microelectronics, Inc./Fujitsu Mikroelektronik GmbH July 1997 Revision 1.0 ESA2UN3241- 60JS -S AC , ./Fujitsu Mikroelektronik GmbH 5 FUJITSU N o te s: 1. 2. July 1997 Revision 1.0 ESA2UN3241- 60JS


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PDF ESA2UN3241- 32bits, 72-pin, MB814405C- 60/70ns)
Not Available

Abstract: No abstract text available
Text: cP IITSU data sheet July 1997 Revision 1.0 ESA2UN3282B- 60JS -S 8MByte (2M x 32) CMOS EDO DRAM Module General Description The ESA2UN3282B- 60JS -S is a high performance, EDO (Extended Data , Fujitsu Microelectronics, Inc./Fujitsu Mikroelektronik GmbH 1 July 1997 Revision 1.0 ESA2UN3282B- 60JS , Mikroelektronik GmbH July 1997 Revision 1.0 ESA2UN3282B- 60JS -S Pin Name A0-A10 A 0 -A 9 DQ0-DQ31 CAS0 , 1997 Revision 1.0 ESA2UN3282B- 60JS -S Unit Max. 440 mA - Note 1 ,2 RAS*, CAS* cycling; t RC


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PDF ESA2UN3282B-60JS-S ESA2UN3282B-60JS-S 32bits, 72-pin, ESA2UN3282B MB8117805B-60PJ
1997 - ESA2UN3241-60JS-S

Abstract: 1MX4
Text: July 1997 Revision 1.0 ESA2UN3241- 60JS -S Functional Diagram CAS1* CAS0* RAS0* RAS1 , Fujitsu Microelectronics, Inc./Fujitsu Mikroelektronik GmbH July 1997 Revision 1.0 ESA2UN3241- 60JS , Microelectronics, Inc./Fujitsu Mikroelektronik GmbH 3 July 1997 Revision 1.0 ESA2UN3241- 60JS -S DC , , Inc./Fujitsu Mikroelektronik GmbH July 1997 Revision 1.0 ESA2UN3241- 60JS -S AC CHARACTERISTICS , 12 5 July 1997 Revision 1.0 ESA2UN3241- 60JS -S 1. An initial pulse of at least 200µs is


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PDF ESA2UN3241- 32bits, 72-pin, MB814405C- 60/70ns) MP-DRAMM-DS-20547-7/97 ESA2UN3241-60JS-S 1MX4
Not Available

Abstract: No abstract text available
Text: 1997 Revision 1.0 ESA2UN3241A- 60JS -S c a s i* CAS2* CASO* RASO* 1 M x8 B lock R A S I , Mikroelektronik GmbH July 1997 Revision 1.0 ESA2UN3241A- 60JS -S Pin Name A 0 -A 9 DQ0-DQ31 CAS0*~CAS3 , 0V, TA = 0 to +70 °C) 60 July 1997 Revision 1.0 ESA2UN3241A- 60JS -S 70 Parameter O p e , Microelectronics, Inc./Fujitsu Mikroelektronik GmbH July 1997 Revision 1.0 ESA2UN3241A- 60JS -S AC , ./Fujitsu Mikroelektronik GmbH 5 FUJITSU N o te s: 1. 2. July 1997 Revision 1.0 ESA2UN3241A- 60JS


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PDF ESA2UN3241A- ESA2UN3241 32bits, 72-pin, MB814405D- 60/70ns)
msm514260c

Abstract: MSM514256C edo 16m x 32
Text: No file text available


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PDF E2G0004-17-42 MSM5110OOC/CL MSM514256C/CL MSM518126/L MSM518128/L MSM511664C/CL MSM511666C/CL 512100/T MSM512200/L~ MSM512800C msm514260c MSM514256C edo 16m x 32
SQJ28-P-400-127

Abstract: No abstract text available
Text: No file text available


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PDF E2G0006-17-41 MSM511000C/CL MSM514256C/CL MSM518126/L MSM518128/L MSM511664C/CL MSM511666C/CL MSM512100/L MSM512200/L MSM512800C SQJ28-P-400-127
2002 - UG6M13601PBG-6

Abstract: No abstract text available
Text: /N MSM5118160D- 60JS only . Absolute Maximum Ratings * Item Voltage on any pin relative to V SS


Original
PDF UG6M13601PBG-6 72Pin 1000mil) UG6M13601PBG UG6M13601PBG-6
2002 - UG6M13601PBT-6

Abstract: UNIGEN
Text: /N MSM5118160D- 60JS only . Absolute Maximum Ratings * Item Voltage on any pin relative to V SS


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PDF UG6M13601PBT-6 72Pin 1000mil) UG6M13601PBT UG6M13601PBT-6 UNIGEN
2002 - UG2M13201PBT

Abstract: No abstract text available
Text: is based on Oki component P/N MSM5118160D- 60JS only . Absolute Maximum Ratings * Item Voltage on


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PDF UG2M13201PBT-6AT UG2M13201PBT-6AT 1Mx16 72Pin 72-Pin UG2M13201PBT
dq15 ti io board

Abstract: No abstract text available
Text: MSM5118160D- 60JS only . Absolute Maximum Ratings * Item Voltage on any pin relative to V SS Voltage on V


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PDF UG2M13201PBG-6KT 72Pin UG2M13201PBG-6KT 1Mx16 dq15 ti io board
Not Available

Abstract: No abstract text available
Text: 40 n$ 30 ns 300 mil 26-pin SOJ MSM514222B- 60JS 60 ns 50 ns 300 mil 26-pin SOJ


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PDF MSM514222B_ MSM514222B b7B424G 0G2455b SOJ26/20-P-300-1 S0J26/20-P-350-1 b72424D
Not Available

Abstract: No abstract text available
Text: cP IITSU data sheet July 1997 Revision 1.0 ESA 1UN3241A-60JS-S 4MByte (1M x 32) CMOS EDO DRAM Module General Description The ESA1UN3241A- 60JS -S is a high performance, EDO (Extended Data Out) 4-megabyte dynamic RAM module organized as 1M words by 32bits, in a 72-pin, leadless, single-in-line memory module (SIMM) package. The module utilizes eight, Fujitsu MB814405D-60PJ CMOS 1Mx4 EDO dynamic RAM in a surface mount package on an epoxy laminate substrate. Each device is accompanied by a decoupling


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PDF 1UN3241A-60JS-S ESA1UN3241A-60JS-S 32bits, 72-pin, MB814405D-60PJ 1Mx16,
1998 - MSM514222B

Abstract: MSM514222B-30RS MSM514222B-40RS MSM514222B-60RS MSM518222
Text: MSM514222B- 60JS 50 ns 60 ns MSM514222B-30ZS 25 ns 30 ns MSM514222B-40ZS 30 ns 40 ns


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PDF E2L0030-17-Y1 MSM514222B 263-Word MSM514222B ZIP20-P-400-1 MSM514222B-30RS MSM514222B-40RS MSM514222B-60RS MSM518222
Not Available

Abstract: No abstract text available
Text: cP IITSU data sheet July 1997 Revision 1.0 ESA 1UN3241-60JS-S 4MByte (1M x 32) CMOS EDO DRAM Module General Description The ESA1UN3241- 60JS -S is a high performance, EDO (Extended Data Out) 4-megabyte dynamic RAM module organized as 1M words by 32bits, in a 72-pin, leadless, single-in-line memory module (SIMM) package. The module utilizes eight, Fujitsu MB814405C-60PJ CMOS 1Mx4 EDO dynamic RAM in a surface mount package on an epoxy laminate substrate. Each device is accompanied by a decoupling


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PDF 1UN3241-60JS-S ESA1UN3241-60JS-S 32bits, 72-pin, MB814405C-60PJ
MSM514221B

Abstract: MSM514222B MSM514222B-30RS MSM514223B MSM518221 MSM518222
Text: $ 30 ns 300 mil 26-pin SOJ MSM514222B- 60JS 60 ns 50 ns 300 mil 26-pin SOJ MSMS14222B-30ZS 30 ns 25 ns


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PDF MSM514222B_ MSM514222B ZIP20-P-400-1 27-W1 b7B424G SOJ26/20-P-300-1 S0J26/20-P-350-1 b72M24D MSM514221B MSM514222B-30RS MSM514223B MSM518221 MSM518222
MSM518221

Abstract: 256kx8 field memory oki MSM514221B MSM514221B-30RS MSM514222B MSM514223B MSM518222
Text: MSM514221B- 60JS 60 ns 50 ns 300 mil 26-pin SOJ MSU514221B-30ZS 30 ns 25 ns 400 mil 20-pin ZIP MSM514221B


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PDF MSM514221B MSM514221B ZIP20-P-400-1 27-W1 b7B424G MSM518221 256kx8 field memory oki MSM514221B-30RS MSM514222B MSM514223B MSM518222
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