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MSB11900Y datasheet (2)

Part Manufacturer Description Type PDF
MSB11900Y Philips Semiconductors Pulsed Microwave Power Transistor Original PDF
MSB11900Y Philips Semiconductors Pulsed Microwave Power Transistor Scan PDF

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MSB11900Y

Abstract: philips ic power amplifier
Text: N AMER PHILIPS/DISCRETE OLE D ■bb53T31 DDlSOb? Û ■MSB11900Y T-33-isr PULSED MICROWAVE POWER TRANSISTOR N-P-N silicon power transistor (two transistor sections) intended for use in military , Respective Manufacturer N AMER PHILIPS/DISCRETE MSB11900Y □bE D ■QDlSDbfl T ■7^33 -/S MECHANICAL , Pulsed microwave power transistor bbS3T31 OOlSOtT 1 ■MSB11900Y ^ T-33-/S - 2400 ptot (W) 1600 , MSB11900Y T-33-& Fig. 3 Input and optimum load impedance in large signal conditions; ZQ = 10 J2; typical


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PDF bb53T31 MSB11900Y T-33-isr 2x160 MSB11900Y T-33-& philips ic power amplifier
Not Available

Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE ^ 5 3 ^ 3 1 QOlSQb? f ■l OLE D MSB11900Y T - 3 3-1ST PULSED MICROWAVE POWER TRANSISTOR N-P-N silicon power transistor (two transistor sections) intended , – MSB11900Y 1 ^ 3 3 MECHANICAL DATA Dimensions in mm Fig. 1 FO-96. -18,4 max 0,15 0,07 , /DISCRETE ObE J > b b S B ^ l ODISObT 1 ■MSB11900Y Pulsed microwave power transistor 'T-33- , DD1S070 a MSB11900Y 7 - 3 i 10 +i 03 -i 10 7Z21014.1 Fig. 3 Input and optimum load


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PDF MSB11900Y 2x160 DD1S070 7Z21014
Not Available

Abstract: No abstract text available
Text: -T~35>~OS MSB11900Y M AINTENANC E TYPE PHILIPS i n t e r n a t i o n a l 5bE D ■7110aEb ÜDMbBBß b37 H P H I N - PULSED MICROWAVE POWER TRANSISTOR NPN silicon power transistor (tw o transistor sections) intended fo r use in m ilitary and professional applications. It operates only in pulsed conditions and is recommended fo r IFF applications at 1.0 9MHz. It offers the follow , be thrown out with general industrial or domestic waste. 203 T-33-05 MSB11900Y philips


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PDF MSB11900Y 7110aEb 2x1000
MSB11900Y

Abstract: No abstract text available
Text: -7^33-05 MAINTENANCE TYPE MSB11900Y PHILIPS INTERNATIONAL 5bE J> m 711002b GOMbBBÖ b37 ■PHIN ~~ PULSED MICROWAVE POWER TRANSISTOR NPN silicon power transistor (two transistor sections) intended for use in military and professional applications. It operates only in pulsed conditions and is recommended for IFF applications at 1.09MHz. It offers the following technological advantages: â , Respective Manufacturer MSB11900Y philips international MECHANICAL DATA Fig. 1 FO-96. SbE » T


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PDF MSB11900Y 711002b 09MHz. 2x1000 MSB11900Y
MSB12900Y

Abstract: j4 transistor MSB11900Y
Text: N AMER PHILIPS/DISCRETE MAINTENANCE TYPE (for new design use MSB11900Y ) OLE D tl 1=1353=131 0015071 T MSB12900Y T- 33-/5" PULSED MICROWAVE POWER TRANSISTOR NPN silicon transistor intended for use in military and professional applications. It operates only in pulsed conditions and Is recommended for IFF applications at 1,09 GHz. It offers the following technological advantages: • Interdigitated structure: high emitter efficiency • Diffused emitter ballasting resistors providing excellent


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PDF MSB11900Y) MSB12900Y 10/is, j4 transistor MSB11900Y
MX0912B250Y

Abstract: FO-57D MRB11175Y RZ2731B16W RZ1214B65Y RZ1214B35Y RZ1214B125Y RX1214B300Y RX1214B150W RV3135B5X
Text: MSB11900Y FO-96 1.09 50 10 1 850 7.5 35 RZB12050Y FO-57C 1.09 50 100 10 50 10 40 RZB12100Y FO-57C 1.09 50


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PDF RZ1214B35Y FO-57C RZ1214B65Y RZ1214B125Y RX1214B150W FO-91 RX1214B300Y MX0912B250Y FO-57D MRB11175Y RZ2731B16W RV3135B5X
Not Available

Abstract: No abstract text available
Text: MSB11900Y RZB12050Y RZB12100Y RX1011B250Y RX1011B350Y MZ0912B50Y MZ092B100Y MX0912B250Y MX0912B350Y


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PDF RZ1214B35Y FO-57C RZ1214B65Y RZ1214B125Y RX1214B150W MRB11175Y MRB11350Y MSB11900Y
Not Available

Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE II ObE D ^ 1^53=131 Q01SQ71 T ■MAINTENANCE TYPE I MSB12900Y (for new design use MSB11900Y ) / V T - 3 3 -/5" PULSED MICROWAVE POWER TRANSISTOR NPN silicon transistor intended for use in military and professional applications. It operates only in pulsed conditions and is recommended for IFF applications at 1,09 GHz. It offers the following technological advantages: • Interdigitated structure: high emitter efficiency • Diffused emitter ballasting resistors


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PDF Q01SQ71 MSB12900Y MSB11900Y)
bf0262a

Abstract: BF0262 OM335 1N5821ID OM336 OM2061 OM926 BUK645 OM2060 BLY94
Text: MPSA75 MPSA76 MPSA77 MPSA92 MPSA93 MPSH10 MPSH81 MRB11040W MRB11175Y MRB11350Y MSB11900Y MTB10010U


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PDF 1N821 1N821A 1N823 1N823A 1N825 1N825A 1N827 1N827A 1N829 1N829A bf0262a BF0262 OM335 1N5821ID OM336 OM2061 OM926 BUK645 OM2060 BLY94
FET BFW10

Abstract: KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11
Text: MRB11350Y MRB12175YR MRB12350YR MS1011B700Y MS6075B800Z MSB11900Y MSB12900Y MZ0912B75Y MZ0912B150Y OM286


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PDF BA220 BA221 BA223 BA281 BA314 BA315 BA316 BA317 BA318 BA423 FET BFW10 KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11
TXD10K40

Abstract: TXD10K60 BT1690 BT808 1N5004 TXD10H60 mp8706 TXC10K40 BT13G BSTC1026
Text: No file text available


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PDF bbS3131 BLU52 1N321 BYW56 1N321A BLV97 1N322 TXD10K40 TXD10K60 BT1690 BT808 1N5004 TXD10H60 mp8706 TXC10K40 BT13G BSTC1026
BGY41

Abstract: BFW10 FET transistor CQY58 germanium germanium transistor zener phc 283 to92 600a transistor bf199 bd643 BTW58
Text: No file text available


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PDF LCD01 BGY41 BFW10 FET transistor CQY58 germanium germanium transistor zener phc 283 to92 600a transistor bf199 bd643 BTW58
cm .02m z5u 1kv

Abstract: BPW22A B2X84 la4347 pin configuration of BFW10 TDA3653 equivalent fx4054 core TRIAC TAG 9322 HEF40106BP equivalent dsq8
Text: No file text available


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PDF BS9000, D3007 HE4000B 80RIBUTION BS9000 cm .02m z5u 1kv BPW22A B2X84 la4347 pin configuration of BFW10 TDA3653 equivalent fx4054 core TRIAC TAG 9322 HEF40106BP equivalent dsq8
transistor f6 13003

Abstract: equivalent transistor bj 131-6 BB112 transistor Eb 13003 BM philips om345 transistor bf 175 TRANSISTOR 131-6 BJ 026 Om175 BU705 a1211 lg
Text: No file text available


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PDF SC08b transistor f6 13003 equivalent transistor bj 131-6 BB112 transistor Eb 13003 BM philips om345 transistor bf 175 TRANSISTOR 131-6 BJ 026 Om175 BU705 a1211 lg
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