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EQW023A0G1 GE Critical Power EQW023 Series, Eighth-Brick Power Module, Input Voltage: 48V (36-75Vdc); Output Voltage: 2.5V; Output Current: 23A; Efficiency: 0.87; Connector Type: Through Hole
EQW023A0G1-S GE Critical Power EQW023 Series, Eighth-Brick Power Module, Input Voltage: 48V (36-75Vdc); Output Voltage: 2.5V; Output Current: 23A; Efficiency: 0.87; Connector Type: Through Hole
PMP5783.4 Texas Instruments Synchronous Buck for Intel Core i3, i5, i7 Arrandale SV (1.1V @ 23A)
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MS51412-23A Seastrom Mfg Bisco Industries 18 - -

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F075

Abstract: f050 393 f050 FE23A
Text: GE P o w e r E lectrolytic C apacitors " r ~~\ 8 5 ° C Product 23A SERIES j ^ , @ +85 C, 120Hz 4.6 5.7 6.9 7.8 8.7 9.7 10.7 11.5 NOTE A GE PART NUMBER 23A 782 F050 BB 23A 113 F050 BC 11000 15000 18000 A 23A 153 F050 BD 23A 183 F050 BE 23A 213 F050 BF 23A 253 F050 BG 23A 293 F050 BH 23A 323 F050 Bl 21000 25000 29000 32000 14000 20000 27000 34000 39000 46000 52000 58000 23A 143 F050 CB 23A 203 F050 CC 23A 273 F050 CD 23A 343 F050 CE 23A 393 F050 CF 23A 463


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2007 - Not Available

Abstract: No abstract text available
Text: 23⠄ƒ 初透磁率    Initial permeability ML12D 340 ※ 1 480 420 690 , —103 4.85 ×103 23⠄ƒ 飽和磁束密度   Bs Saturation magnetic flux density 23â , €ƒ   Electrical resistivity   密度   Density  12 23⠄ƒ 23⠄ƒ 100kHz , 300 180 100 180 mT 23⠄ƒ 100℃ 23⠄ƒ 100℃ 相対損失係数    Relative loss factor MB28D 530 23⠄ƒ MB22D ± 25% 1900 23⠄ƒ 100℃ 残留磁束密åº


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2007 - Not Available

Abstract: No abstract text available
Text: 23⠄ƒ 初透磁率    Initial permeability ML12D 340 ※ 1 480 420 690 , —103 4.85 ×103 23⠄ƒ 飽和磁束密度   Bs Saturation magnetic flux density 23â , €ƒ   Electrical resistivity   密度   Density  12 23⠄ƒ 23⠄ƒ 100kHz , 300 180 100 180 mT 23⠄ƒ 100℃ 23⠄ƒ 100℃ 相対損失係数    Relative loss factor MB28D 530 23⠄ƒ MB22D ± 25% 1900 23⠄ƒ 100℃ 残留磁束密åº


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1999 - smd diode 46A

Abstract: IDD23E60 PG-TO252-3-1
Text: =600V, Tj=150°C - - 1900 Forward voltage drop VF V IF= 23A , T j=25°C - 1.5 2 IF= 23A , T j=150°C - 1.5 - 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer , ns t rr V R=400V, IF= 23A , diF/dt=1000A/µs, Tj=25°C - 120 - V R=400V, IF= 23A , diF/dt=1000A/µs, Tj=125°C - 164 - V R=400V, IF= 23A , diF/dt=1000A/µs, Tj=150°C - 170 - Peak reverse current A I rrm V R=400V, IF = 23A , diF/dt=1000A/µs, Tj =25°C - 17 - V R


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PDF IDD23E60 PG-TO252-3-1 D23E60 smd diode 46A IDD23E60 PG-TO252-3-1
1999 - smd diode 46A

Abstract: IDD23E60 J-STD-020A P-TO252
Text: 50 V R=600V, Tj=150°C - - 1900 Forward voltage drop VF V IF= 23A , T j=25°C - 1.5 2 IF= 23A , T j=150°C - 1.5 - 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with , Reverse recovery time ns t rr V R=400V, IF= 23A , diF/dt=1000A/µs, Tj=25°C - 120 - V R=400V, IF= 23A , diF/dt=1000A/µs, Tj=125°C - 164 - V R=400V, IF= 23A , diF/dt=1000A/µs, Tj=150°C - 170 - Peak reverse current A I rrm V R=400V, IF = 23A , diF/dt=1000A/µs, Tj =25°C


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PDF IDD23E60 P-TO252-3-1 Q67040-S4381 D23E60 smd diode 46A IDD23E60 J-STD-020A P-TO252
1999 - Not Available

Abstract: No abstract text available
Text: 1.5 50 1900 V 2 - Forward voltage drop IF= 23A , T j=25°C IF= 23A , T j=150°C 1Device on 40mm*40mm , °C, unless otherwise specified Parameter Dynamic Characteristics Reverse recovery time V R=400V, IF= 23A , diF/dt=1000A/µs, Tj=25°C V R=400V, IF= 23A , diF/dt=1000A/µs, Tj=125°C V R=400V, IF= 23A , diF/dt=1000A/µs , 21.5 970 1580 1770 4.4 4.8 5 A nC - Peak reverse current V R=400V, IF = 23A , diF/dt=1000A/µs, Tj =25°C V R=400V, IF = 23A , diF/dt=1000A/µs, T j=125°C V R=400V, IF = 23A , diF/dt=1000A/µs, T j


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PDF IDD23E60 IDD23E60 PG-TO252-3-1 Q67040-S4381 D23E60
1999 - smd diode 46A

Abstract: No abstract text available
Text: 1.5 50 1900 V 2 - Forward voltage drop IF= 23A , T j=25°C IF= 23A , T j=150°C 1Device on 40mm*40mm , °C, unless otherwise specified Parameter Dynamic Characteristics Reverse recovery time V R=400V, IF= 23A , diF/dt=1000A/µs, Tj=25°C V R=400V, IF= 23A , diF/dt=1000A/µs, Tj=125°C V R=400V, IF= 23A , diF/dt=1000A/µs , 21.5 970 1580 1770 4.4 4.8 5 A nC - Peak reverse current V R=400V, IF = 23A , diF/dt=1000A/µs, Tj =25°C V R=400V, IF = 23A , diF/dt=1000A/µs, T j=125°C V R=400V, IF = 23A , diF/dt=1000A/µs, T j


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PDF IDB23E60 P-TO220-3 IDB23E60 D23E60 Q67040-S4487 smd diode 46A
2000 - SOT23-A

Abstract: SOT23a SOT-23A MARKING 16 5PIN
Text: . Open Drain or CMOS Space-Saving . 5-Pin SOT- 23A Package, 3-Pin SOT- 23A Package , 2.8V VOUT Tolerance: 02 = ±2% Tolerance Temperature/Package: ­40°C to +85°C = E 3-Pin SOT- 23A Package = CB 5-Pin SOT- 23A Package = CT VREF (2) N-Channel Open Drain Output VSS VIN Taping Direction: TR = Standard RT = Reverse PIN CONFIGURATION *3-Pin SOT- 23A VIN *5-Pin SOT- 23A NC 5 NC 4 , -Pin SOT- 23A is equivalent to EIAJ SC-59 *5-PIn SOT- 23A is equivalent to EIAJ SC-74A TelCom


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PDF OT-23A 100mV TC53-2 D-82152 SOT23-A SOT23a SOT-23A MARKING 16 5PIN
1999 - smd diode 46A

Abstract: IDP23E60
Text: =25°C - - 50 V R=600V, Tj=150°C - - 1900 Forward voltage drop VF V IF= 23A , T j=25°C - 1.5 2 IF= 23A , T j=150°C - 1.5 - 1Device on 40mm*40mm*1.5mm epoxy , Characteristics Reverse recovery time ns t rr V R=400V, IF= 23A , diF/dt=1000A/µs, Tj=25°C - 120 - V R=400V, IF= 23A , diF/dt=1000A/µs, Tj=125°C - 164 - V R=400V, IF= 23A , diF/dt=1000A/µs, Tj=150°C - 170 - Peak reverse current A I rrm V R=400V, IF = 23A , diF/dt


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PDF IDP23E60 PG-TO220-2-2. D23E60 smd diode 46A IDP23E60
2006 - Not Available

Abstract: No abstract text available
Text: ) +0 φ16.0 –0.3 φ14 途 (+) ■放電特性 Discharge Characteristics 温度: 23⠄ƒ(Temp. 23⠄ƒï¼‰ 4.0 Voltage 電   圧 3.0 2.0 æ”¾é›»è² è· : 15kΩ æ”¾é›»è² è , ½‹Î©) 温度: 23⠄ƒ(Temp. 23⠄ƒï¼‰ 4 .0 æ”¾é›»è² è· : 30kΩ 電   圧 3 .0 60℃ 2 .0 , .2 2 .8 23⠄ƒ 2 .6 2 .4 放   電   容   量 10 100 終止電圧:2.0V (2.0V Cut off) 100 75 23⠄ƒ 50 25 2 .2 1 (mAh) 0 0 .1 1


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PDF CR1620 78mAh 15sec.
2002 - Not Available

Abstract: No abstract text available
Text: Type“12” (0805) 3 Type“13” (1206) 3.20±0.15 1.60±0.15 3.2±0.2 Type“ 23â , (Pitch:4mm) V F Z TypeÒ 23à “ (1210) T=2.0 T=2.5 TypeÒ34Ó (1812) T=2.5 T=3.2 4,000 , . 0.07max. 0.05max. 0.1max. TypeÒ13Ó:C=4.7µF TypeÒ12Ó:C>1µF TypeÒ 23à “, Ó34Ó TypeÒ13Ó:C=4.7µF TypeÒ 23à “, Ó34Ó 0.025max. 0.1max. 0.05max. 0.125max. TypeÒ12Ó: C=1µF TypeÒ11Ó: C=1µF TypeÒ13Ó:C>4.7µF TypeÒ12Ó:C=4.7µF TypeÒ 23à “, Ó34Ó TypeÒ13Ó:C=10µF 0.075max


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PDF ECJ5YF1E226Z DC16V ECJ5YB1C226M ECJ5YF1C226Z DC10V ECJ5YB1A226M ECJ5YF1A476Z ECJ5YB0J476M
QFN44

Abstract: AAT3123 AAT3123A AAT3124
Text: PRODUCT DATASHEET AAT3123/ 23A /24 ChargePumpTM High Efficiency 1X/1.5X Fractional Charge Pump for White LED Applications General Description Features The AAT3123/ 23A /24 is a low noise , capacitors and two small 1F capacitors at VIN and OUT) make the AAT3123/ 23A /24 ideally suited for small , Outputs (AAT3123/ 23A ) · 32-Position Logarithmic Scale with Digital Control · Simple Serial Control , · Temperature Range: -40°C to +85°C · 12-Pin TSOPJW Package (AAT3123/ 23A ) · 16-Pin 4x4mm QFN and


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PDF AAT3123/23A/24 AAT3123/23A/24 QFN44 AAT3123 AAT3123A AAT3124
2009 - Not Available

Abstract: No abstract text available
Text: voltage drop VF V IF= 23A , T j=25°C - 1.5 2 IF= 23A , T j=150°C - 1.5 - , . typ. Unit max. Dynamic Characteristics Reverse recovery time ns t rr V R=400V, IF= 23A , diF/dt=1000A/µs, Tj=25°C - 120 - V R=400V, IF= 23A , diF/dt=1000A/µs, Tj=125°C - 164 - V R=400V, IF= 23A , diF/dt=1000A/µs, Tj=150°C - 170 - Peak reverse current A I rrm V R=400V, IF = 23A , diF/dt=1000A/µs, Tj =25°C - 17 - V R=400V, IF = 23A


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PDF IDB23E60 -TO263-3-2 D23E60
2009 - smd diode 46A

Abstract: IDP23E60 IEC61249-2-21 DIODE 1000a PG-TO220-2
Text: =25°C - - 50 V R=600V, Tj=150°C - - 1900 VF Forward voltage drop V IF= 23A , T j=25°C - 1.5 2 IF= 23A , T j=150°C - 1.5 - 1Device on 40mm*40mm*1.5mm epoxy , Characteristics t rr Reverse recovery time ns V R=400V, IF= 23A , diF/dt=1000A/s, Tj=25°C - 120 - V R=400V, IF= 23A , diF/dt=1000A/s, Tj=125°C - 164 - V R=400V, IF= 23A , diF/dt=1000A/s, Tj=150°C - 170 - I rrm Peak reverse current A V R=400V, IF = 23A , diF/dt=1000A/s, Tj =25°C


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PDF IDP23E60 PG-TO220-2 IEC61249-2-21 D23E60 smd diode 46A IDP23E60 IEC61249-2-21 DIODE 1000a PG-TO220-2
2006 - Not Available

Abstract: No abstract text available
Text: ¸©åº¦ï¼š 23⠄ƒ(Temp. 23⠄ƒï¼‰ 4.0 Voltage 電   圧 3.0 2.0 æ”¾é›»è² è· : 10kÎ , €§ Discharge Characteristics on Load Discharge Characteristics on Temperature 温度: 23⠄ƒ(Temp. 23â , „ƒ (V) 1 .0 23⠄ƒ 300 æ”¾é›»è² è· : 30kΩ 400 1 .0 0 .0 0 .0 0 100 , œ§ 3 .0 2 .8 Capacity Voltage 3 .2 23⠄ƒ 2 .6 (V) 2 .4 2 .2 1 10 100 50 放   電   容   量 40 23⠄ƒ 30 20 10 0 (mAh) 0.1 1


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PDF CR1216 30mAh 15sec.
2006 - CR1616 equivalent

Abstract: No abstract text available
Text: ) +0 φ16.0 –0.3 φ14 途 (+) ■放電特性 Discharge Characteristics 温度: 23⠄ƒ(Temp. 23⠄ƒï¼‰ 4.0 Voltage 電 3.0   圧 2.0 æ”¾é›»è² è· : 15kΩ æ”¾é›»è² è· ï , Characteristics on Load Discharge Characteristics on Temperature 温度: 23⠄ƒ(Temp. 23⠄ƒï¼‰ 電   å , Capacity Voltage 3 .0 23⠄ƒ 2 .6 (V) 2 .4 10 100 終止電圧:2.0V (2.0V Cut off) 70 放   電   容   量 60 50 23⠄ƒ 40 30 20 10 2 .2 1


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PDF CR1616 60mAh 15sec. CR1616 equivalent
2006 - CR2016 equivalent

Abstract: No abstract text available
Text: φ20.0 –0.3 φ18 途 Discharge Characteristics 温度: 23⠄ƒ(Temp. 23⠄ƒï¼‰ 4.0 , ¼‰ Voltage Voltage 電   圧 æ”¾é›»è² è· 15kΩ(Load 15kΩ) 温度: 23⠄ƒ(Temp. 23⠄ƒï¼‰ 4 .0 æ”¾é›»è² è· : 30kΩ 60℃ 電   圧 3 .0 23⠄ƒ -1 0 ℃ 2 .0 , Discharge time Discharge Load vs. Discharge Capacity 3 .0 Capacity Voltage 3 .2 23⠄ƒ 2 , ¼š2.0V (2.0V Cut off) 100 75 23⠄ƒ 50 25 2 .2 1 (mAh) 0 0 .1 1


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PDF CR2016 90mAh 05min. 15sec. CR2016 equivalent
2009 - e88991

Abstract: No abstract text available
Text: voltage Rated current 10 % at 23 °C Coil resistance Max. continuous 10 % at 23 °C Pick up , 23 °C at 23 °C voltage (V) (mA) ( ) 3 176 17 5 106 47 6 88 , ) voltage(Min) at rated at 85°C at 23 °C at 23 °C voltage approx. 0.53W High Sensitivity Type (N) Rated voltage Rated current 10 % at 23 °C Coil resistance Max. continuous 10 % at 23 °C (V) (mA) ( ) 3 133 22.5 5 80 62 6 67 90 9 44


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PDF 277VAC 888-IR 2002/95/EC. 888-1CH-F-V 888-1CH-F-S 888-2AC-F-C 888-2AC-F-V 888-2AC-F-S 888-2AH-F-V 888-2AH-F-S e88991
2002 - Voltage Detector SOT-89 marking

Abstract: marking dk sot-89 MARKING GA SOT-89 dk marking code sot-89 tc54vn3002ecb713 sot-89 marking ct TC54VC2902ECB713
Text: Packages: 3-Pin SOT- 23A , 3-Pin SOT-89, 5-Pin SOT- 23A (7.7V only) · Low Current Drain: Typ. 1µA · Wide , Diagram 2 VIN TC54VC only TC54-xxxxxxxxxxx 3-Pin SOT- 23A -40°C to +85°C TC54-xxxxxxxxxxx 5-Pin SOT- 23A , details. ­ + VOUT 1 Package Type 3-Pin SOT- 23A VIN 2 3-Pin SOT-89 VREF VSS 3 TC54 , output. 5-Pin SOT- 23A NC 5 NC 4 TC54 1 VOUT 2 VIN 3 VSS NOTE: 3-Pin SOT- 23A is equivalent to the EIAJ SC-59. 5-Pin SOT- 23A is equivalent to the EIAJ SC-74A. 2002 Microchip Technology Inc


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PDF OT-23A, OT-89, OT-23A Voltage Detector SOT-89 marking marking dk sot-89 MARKING GA SOT-89 dk marking code sot-89 tc54vn3002ecb713 sot-89 marking ct TC54VC2902ECB713
2006 - SOT23-A

Abstract: SOT23A TC6501 TC6502 TC6503 TC6504 microchip 5c SOT-23A
Text: TC6501/2/3/4 · 5 SOT- 23A · 10°C -45°C +125°C · +2°C +10°C · ±0.5°C · , /TC6502 +35°C +125°C TC6503/TC6504 -45°C +15°C TC6501/2/3/4 5 5 SOT- 23A , TC6503 TUNDER TC6504 TC6503 TC6504 HYST 3 4 VCC SOT- 23A EIAJ SC-74A 5 2006 , TC6501/2/3/4 17 µA 5 SOT- 23A 140°C/W TC6501 1 mA 0.3V 0.3 mW 0.042°C 2 TC6501/2/3/4 2 5 SOT- 23A HYST CMOS HYST 2°C HYST= GND 10°C HYST


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PDF TC6501/2/3/4 OT-23A OT-23 TC6501TC6503 TC6502 TC6504 TC6501/TC6502 TC6503/TC6504 SOT23-A SOT23A TC6501 TC6502 TC6503 TC6504 microchip 5c SOT-23A
Cutler-Hammer LD

Abstract: NDC312T32W Cutler-Hammer Digitrip RMS 310 rating plug 12NES1200T 8NES800T Cutler-Hammer Digitrip RMS 310 NDC3800T33W NDC312T36W 12NES800T Cutler-Hammer Digitrip RMS 310 trip unit
Text: . I.T 23a 23a - - - - 65,000 65,000 - - 35,000 35,000 - 25,000 25,000 - - 10,000 - 10,000 - CKD 100 ­ 400 2, 3, 4 600 250 I.T 23a - , I.T 23a - - 100,000 - 65,000 35,000 - 22,000 - CHKD 100 ­ 400 2, 3, 4 600 250 I.T 23a - - 100,000 - 65,000 35,000 - 22,000 - KDC 100 ­ 400 2, 3, 4 600 250 I.T 23a - - 200,000 - 100,000 50,000 -


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PDF
Not Available

Abstract: No abstract text available
Text: PRODUCT DATASHEET AAT3123/ 23A /24 ChargePumpTM High Efficiency 1X/1.5X Fractional Charge Pump for White LED Applications Ge n e r a l D e scr ipt ion Fe a t u r e s The AAT3123/ 23A /24 is , count (two 1µF flying capacitors and two small 1µF capacitors at VIN and OUT) make the AAT3123/ 23A , to Six 20mA Outputs (AAT3124) • Up to Four 20mA Outputs (AAT3123/ 23A ) • 32-Position Logarithmic , : -40°C to +85°C • 12-Pin TSOPJW Package (AAT3123/ 23A ) • 16-Pin 4x4mm QFN and 14-Pin TSOPJW


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PDF AAT3123/23A/24 AAT3123/23A/24
2006 - CR1220 Sony

Abstract: No abstract text available
Text: 温度: 23⠄ƒ(Temp. 23⠄ƒï¼‰ 4.0 Voltage 電   圧 3.0 2.0 æ”¾é›»è² è· ï , ¸©åº¦ç‰¹æ€§ Discharge Characteristics on Load Discharge Characteristics on Temperature 温度: 23⠄ƒ(Temp. 23⠄ƒï¼‰ 電   圧 3 .0 2 .0 æ”¾é›»è² è· : 10kΩ (V) æ”¾é›»è² è , œ§ 3 .0 23⠄ƒ -1 0 ℃ 2 .0 60℃ (V) 1 .0 1 .0 0 .0 0 .0 0 100 200 , %時の電圧) é›»è² è·ã¨é›»æ°—å®¹é‡ Capacity Voltage 3 .0 23⠄ƒ 2 .6 (Vï


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PDF CR1220 40mAh 15sec. CR1220 Sony
2009 - Not Available

Abstract: No abstract text available
Text: 1900 VF Forward voltage drop V IF= 23A , T j=25°C - 1.5 2 IF= 23A , T j , ns V R=400V, IF= 23A , diF/dt=1000A/μs, Tj=25°C - 120 - V R=400V, IF= 23A , diF/dt=1000A/μs, Tj=125°C - 164 - V R=400V, IF= 23A , diF/dt=1000A/μs, Tj=150°C - 170 - I rrm Peak reverse current A V R=400V, IF = 23A , diF/dt=1000A/μs, Tj =25°C - 17 - V R=400V, IF = 23A , diF/dt=1000A/μs, T j=125°C - 19.5 - V R=400V, IF = 23A , diF/dt


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PDF IDP23E60 PG-TO220-2 IEC61249-2-21 D23E60
1999 - Not Available

Abstract: No abstract text available
Text: 1.5 50 1900 V 2 - Forward voltage drop IF= 23A , T j=25°C IF= 23A , T j=150°C 1Device on 40mm*40mm , °C, unless otherwise specified Parameter Dynamic Characteristics Reverse recovery time V R=400V, IF= 23A , diF/dt=1000A/µs, Tj=25°C V R=400V, IF= 23A , diF/dt=1000A/µs, Tj=125°C V R=400V, IF= 23A , diF/dt=1000A/µs , 21.5 970 1580 1770 4.4 4.8 5 A nC - Peak reverse current V R=400V, IF = 23A , diF/dt=1000A/µs, Tj =25°C V R=400V, IF = 23A , diF/dt=1000A/µs, T j=125°C V R=400V, IF = 23A , diF/dt=1000A/µs, T j


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PDF IDD23E60 IDD23E60 PG-TO252-3-1 D23E60
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