The Datasheet Archive

Top Results (1)

Part Manufacturer Description Datasheet Download Buy Part
MRF141G MACOM RF Power Field-Effect Transistor, 2-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CASE 375-04, 4 PIN

MRF141G datasheet (9)

Part Manufacturer Description Type PDF
MRF141G Advanced Semiconductor RF FIELD-EFFECT POWER TRANSISTOR Original PDF
MRF141G M/A-COM RF FETs, Discrete Semiconductor Products, FET RF 2N CH 28V 300W 375-04 Original PDF
MRF141G M/A-COM 300 W, 28 V, 175 MHz N-CHANNEL BROADBAND RF POWER MOSFET Original PDF
MRF141G Motorola FET Transistor, RF Power Field-Effect Transistor, N-Channel Enhancement-Mode MOSFET Original PDF
MRF141G Motorola N-CHANNEL BROADBAND RF POWER MOSFET Original PDF
MRF141G Motorola MRF141G RF Power Transistor Original PDF
MRF141G NXP Semiconductors PHILIPS VDMOS RF-POWER TRANSISTORS CROSS REFERENCE LIST PHILIPS VDMOS vs MOTOROLA TMOS TRANSISTORS Original PDF
MRF141G Motorola Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, MOSFET, RF Power, VDD=28V, 300W, Class AB, Pkg Style 375/2 Scan PDF
MRF141G Others FET Data Book Scan PDF

MRF141G Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
TOROIDS Design Considerations

Abstract: MRF141G arco 403 arco 406 how to build vhf tv transmitter AN211A MRF141G data sheet motorola AN211A mosfet HF amplifier CO-AX
Text: applies to each half of MRF141G. 5 10 15 20 VDS, DRAIN­TO­SOURCE VOLTAGE (VOLTS) NOTE: Data shown applies to each half of MRF141G. Figure 4. Common Source Unity Gain Frequency versus Drain Current , MOTOROLA Order this document by MRF141G /D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF141G N­Channel Enhancement­Mode MOSFET Designed for , ©MOTOROLA RF DEVICE DATA Motorola, Inc. 1997 MRF141G 1 ELECTRICAL CHARACTERISTICS (TC = 25°C unless


Original
PDF MRF141G/D MRF141G MRF141G/D* TOROIDS Design Considerations MRF141G arco 403 arco 406 how to build vhf tv transmitter AN211A MRF141G data sheet motorola AN211A mosfet HF amplifier CO-AX
application MOSFET transmitters fm

Abstract: TOROIDS Design Considerations mrf141g
Text: WIRELESS SEMICONDUCTOR SOLUTIONS DEVICE DATA MRF141G 4.2-117 TYPICAL CHARACTERISTICS NOTE: Data shown applies to each halt of MRF141G. NOTE: Data shown applies to each half of MRF141G. Figure 4 , MOTOROLA WIRELESS SEMICONDUCTOR SOLUTIONS DEVICE DATA MRF141G 4.2-115 ELECTRICAL CHARACTERISTICS (Tc , push-pull configuration. Gps tl ¥ No Degradation in Output Power 12 45 14 55 - - dB % MRF141G 4.2-116 , Output Impedances MRF141G 4.2-118 MOTOROLA WIRELESS SEMICONDUCTOR SOLUTIONS DEVICE DATA RF POWER


OCR Scan
PDF
2009 - MRF141G

Abstract: MRF141G data sheet
Text: MRF141G RF Power FET 300W, 175MHz, 28V M/A-COM Products Released - Rev. 3 Product Image , ) or information contained herein without notice. MRF141G RF Power FET 300W, 175MHz, 28V M , . MRF141G RF Power FET 300W, 175MHz, 28V M/A-COM Products Released - Rev. 3 3 ADVANCED: Data , information contained herein without notice. MRF141G RF Power FET 300W, 175MHz, 28V M/A-COM Products , . changes to the product(s) or information contained herein without notice. MRF141G RF Power FET 300W


Original
PDF MRF141G 175MHz, MRF141G MRF141G data sheet
1999 - MRF141G

Abstract: 954 zener CO-AX TOROIDS Design Considerations AN211A Nippon capacitors
Text: applies to each half of MRF141G. 5 10 15 20 VDS, DRAIN­TO­SOURCE VOLTAGE (VOLTS) NOTE: Data shown applies to each half of MRF141G. Figure 4. Common Source Unity Gain Frequency versus Drain , MOTOROLA Order this document by MRF141G /D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF141G N­Channel Enhancement­Mode MOSFET Designed for , ©MOTOROLA RF DEVICE DATA Motorola, Inc. 1998 MRF141G 1 ELECTRICAL CHARACTERISTICS (TC = 25°C unless


Original
PDF MRF141G/D MRF141G MRF141G 954 zener CO-AX TOROIDS Design Considerations AN211A Nippon capacitors
arco 406

Abstract: mrf141g transistor fet N-Channel RF Amplifier RF TOROIDS Design Considerations
Text: : Data shown applies to each half of MRF141G. NOTE: Data shown applies to each half of MRF141G. , Reliability MRF141G 300 W, 28 V, 175 MHz N-CHANNEL BROADBAND RF POWER MOSFET · · · MAXIMUM RATINGS , observed. REV 2 MRF141G 2-236 MOTOROLA RF DEVICE DATA ELECTRICAL CHARACTERISTICS (Tc = 25 , - % V No Degradation in Output Power MOTOROLA RF DEVICE DATA MRF141G 2-237 C1 - , ) Figure 2. DC Safe Operating Area Figure 3. Gate-Source Voltage versus Case Temperature MRF141G


OCR Scan
PDF MRF141G MRF141G arco 406 transistor fet N-Channel RF Amplifier RF TOROIDS Design Considerations
Not Available

Abstract: No abstract text available
Text: DEVICE DATA MRF141G 2-145 TYPICAL CHARACTERISTICS fj. UNITY GAIN FREQUENCY (MHz) lD, DRAIN CURRENT (AMPS) NOTE: Data shown applies to each half of MRF141G. NOTE: Data shown applies to each half of MRF141G. Figure 4. Common Source Unity Gain Frequency versus Drain Current Figure 5 , packaging MOS devices should be observed. MOTOROLA RF DEVICE DATA MRF141G 2-143 ELECTRICAL , configuration. V = 175 MHz, No Degradation in Output Power MRF141G 2-144 MOTOROLA RF DEVICE DATA


OCR Scan
PDF MRF141G
1998 - arco 403

Abstract: MRF141G MRF141G data sheet AN211A Nippon capacitors
Text: 18 Ciss 200 Crss 20 20 0 NOTE: Data shown applies to each half of MRF141G. 5 10 15 20 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) NOTE: Data shown applies to each half of MRF141G. , MOTOROLA Order this document by MRF141G /D SEMICONDUCTOR TECHNICAL DATA RF Power Field-Effect Transistor MRF141G N­Channel Enhancement­Mode MOSFET Designed for broadband commercial and , MOTOROLA RF © Motorola, Inc. 1998 DEVICE DATA MRF141G 1 PRODUCT TRANSFERRED TO M/A­COM The RF


Original
PDF MRF141G/D MRF141G arco 403 MRF141G MRF141G data sheet AN211A Nippon capacitors
Not Available

Abstract: No abstract text available
Text: Voltage versus Case Temperature NOTE: D ata s h o w n a p p lie s to each h a lf o f MRF141G. NOTE : Data s h o w n a p p lie s to each h a lf o f MRF141G. Figure 4. Common Source Unity Gain Frequency , u tp u t Power · N itrid e Passivated Die fo r Enhanced R eliab ility MRF141G 300 W, 28 V, 175 , R F D E V IC E DATA 2 -3 7 9 MRF141G ELECTRICAL CHARACTERISTICS OFF CHARACTERISTICS , quivalent Figure 1. 175 MHz Test Circuit M OTOROLA RF DEVICE DATA 2-380 MRF141G TYPICAL


OCR Scan
PDF MRF141G MRF141G F141G
SU 179 transistor

Abstract: Motorola ic 1036 Nippon capacitors
Text: ate-S ource Voltage versus Case Temperature MOTOROLA RF DEVICE DATA MRF141G 3 TYPICAL CHARACTERISTICS fT UNITY GAIN FREQUENCY (MHz) NOTE: Data shown applies to each half of MRF141G. NOTE: Data shown applies to each half of MRF141G. Figure 4. Common Source Unity Gain Frequency versus , Simulators. See http://m otorola.com/sps/rf/desiantds/ MRF141G 300 W, 28 V, 175 MHz N -C H A N N E L , Degradation in O utput Power MRF141G 2 MOTOROLA RF DEVICE DATA R1 + o- V W BIAS 0 - 6 V


OCR Scan
PDF RF141G/D SU 179 transistor Motorola ic 1036 Nippon capacitors
2001 - Not Available

Abstract: No abstract text available
Text: 0 NOTE: Data shown applies to each half of MRF141G. 5 10 15 20 VDS, DRAIN­TO­SOURCE VOLTAGE (VOLTS) NOTE: Data shown applies to each half of MRF141G. 25 Figure 4. Common Source Unity Gain , /sps/rf/designtds/ D MRF141G 300 W, 28 V, 175 MHz N­CHANNEL BROADBAND RF POWER MOSFET G G S , should be observed. REV 3 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF141G 5.2­31 , 12 45 14 55 - - dB % MRF141G 5.2­32 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA


Original
PDF MRF141G floatMRF141G
TOROIDS Design Considerations

Abstract: No abstract text available
Text: Temperature MOTOROLA RF DEVICE DATA MRF141G 2 -3 1 5 TYPICAL CHARACTERISTICS MRF141G. NOTE: Data shown applies to each half of MRF141G. Figure 4. Com mon Source Unity Gain Frequency versus Drain C urrent Figure 5 , DEVICE DATA MRF141G 2 -3 1 3 ELECTRICAL CHARACTERISTICS (Tc = 25C 'C unless otherwise noted , Power MRF141G 2 -3 1 4 MOTOROLA RF DEVICE DATA IC 12 X I WT ± =" J L1 28 V OUTPUT


OCR Scan
PDF
Not Available

Abstract: No abstract text available
Text: MRF141G Transistors Matched Pair of N-Channel Enhancement MOSFETs V(BR)DSS (V)65 V(BR)GSS (V) I(D) Max. (A)32.0 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)500 Minimum Operating Temp (øC) Maximum Operating Temp (øC)150 Thermal Resistance Junc-Case Thermal Resistance Junc-Amb. V(GS)th Max. (V) V(GS)th (V) (Min) @(VDS) (V) (Test Condition) @I(D) (A) (Test Condition) I(DSS) Max. (A) @V(DS) (V) (Test Condition) @Temp (øC


Original
PDF MRF141G
1999 - MRF141G

Abstract: MOSFET RF POWER MRF141G data sheet push pull power amplifier
Text: MRF141G RF FIELD-EFFECT POWER TRANSISTOR DESCRIPTION: The ASI MRF141G is a Dual Common Source N-Channel Enhancement-Mode MOSFET RF Power Transistor, Designed for 175 MHz, 300 W Transmitter and Amplifier Applications. PACKAGE STYLE .385X.850 4LFG MAXIMUM RATINGS ID 32 A VDSS 65 V VGS ±40 V PDISS 500 W @ TC = 25 C TJ -65 C to +200 C TSTG -65 C to +200 C JC O O O O O O 1 & 2 = DRAIN 3 & 4 = GATE 5 = SOURCE 0.35 C/W CHARACTERISTICS


Original
PDF MRF141G MRF141G MOSFET RF POWER MRF141G data sheet push pull power amplifier
2001 - MRF141G

Abstract: u 172 954 zener AN211A
Text: 20 20 0 NOTE: Data shown applies to each half of MRF141G. 5 10 15 20 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) NOTE: Data shown applies to each half of MRF141G. Figure 4. Common Source , Order this document by MRF141G /D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF141G N­Channel Enhancement­Mode MOSFET Designed for broadband commercial and , with a grounded iron. DESIGN CONSIDERATIONS The MRF141G is an RF Power, MOS, N­channel enhancement


Original
PDF MRF141G/D MRF141G MRF141G u 172 954 zener AN211A
motorola mrf

Abstract: MRF255 equivalent Motorola transistors MRF mrf184 mrf5015 DU1230P F2012 MRF151G uf2810p MRF255
Text: CROSS REFERENCE (Click on part No. to retrieve data sheet). 5/22/2005 Motorola POLYFET PHILIPS POLYFET MA/COM PHI POLYFET MRF134 MRF136 MRF137 MRF141 MRF141G PRF134 PRF136 PRF137 SM401 SR401 BLF145 BLF147 BLF175 BLF177 BLF242 MRF148 MRF151 MRF151G SA741 SM341 SR341 MRF166 MRF166C MRF166W MRF171 MRF172 MRF173 MRF174 MRF175GU MRF176GU MRF177 MRF 255 SA701 SM704 SA741 SM341 PRF134 DU1215S DU1230P DU1230S DU1260T DU2805S F1215 F1207 F1220 F1260


Original
PDF MRF134 MRF136 MRF137 MRF141 MRF141G PRF134 PRF136 PRF137 SM401 SR401 motorola mrf MRF255 equivalent Motorola transistors MRF mrf184 mrf5015 DU1230P F2012 MRF151G uf2810p MRF255
1999 - MRF648

Abstract: TP9383 TPV-3100 TPV3100 MRF238 MOTOROLA SD1393 MRF188 mrf10500 mrf422 TP9380
Text: June 1999 ST CROSS REFERENCE WITH MOTOROLA INDUSTRY PART NUMBER ST REPLACEMENT PREFERENCE INDUSTRY PART NUMBER ST REPLACEMENT PREFERENCE 2N5944 SD1134 MRF859 SD1423 2N5945 2N5946 2N6082 2N6084 2N6439 MHW912 MHW914 MHW916 MRA1600-2 MRF134 MRF136 MRF136Y MRF137 MRF138 MRF141G MRF148 MRF150 MRF151 MRF151G MRF166 MRF175GV MRF175GU MRF182 MRF182S MRF183 MRF183S MRF184 MRF184S MRF186 MRF187 MRF188 MRF224 MRF233 MRF238 MRF240 MRF240A MRF247


Original
PDF 2N5944 SD1134 MRF859 SD1423 2N5945 2N5946 2N6082 2N6084 2N6439 MHW912 MRF648 TP9383 TPV-3100 TPV3100 MRF238 MOTOROLA SD1393 MRF188 mrf10500 mrf422 TP9380
RF MOSFET

Abstract: MRF141G
Text: LPioaucti, TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. The RF MOSFET Line RF Power Field-Effect Transistor MRF141G N-Channel Enhancement-Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands, • Guaranteed Performance


Original
PDF MRF141G 14dBTyp) 100mA) 175MHz) RF MOSFET MRF141G
motorola MRF150

Abstract: MRF174 "cross-reference" MRF140 mrf151g 300 blf245 MRF166C MRF150 BLF544 SOT123 MRF157
Text: Version 1.0 Date: 2002-08-01 PHILIPS VDMOS Cross-Reference List UHF Philips Type VDMOS BLF548 Motorola Type TMOS MRF275G MRF275L MRF177 MRF176GU MRF175LU MRF175GU BLF546 MRF166W BLF544 Philips Motorola Motorola Motorola Motorola Motorola Motorola Philips Motorola Philips MRF166C BLF542 MRF160 BLF404 BLF521 MRF158 VHF Operation BLF368 MRF141G BLF278 Motorola Philips Motorola Philips Philips Motorola Philips Motorola Philips MRF176GV MRF151G MRF175GV


Original
PDF BLF548 MRF275G MRF275L MRF177 MRF176GU MRF175LU MRF175GU BLF546 MRF166W BLF544 motorola MRF150 MRF174 "cross-reference" MRF140 mrf151g 300 blf245 MRF166C MRF150 BLF544 SOT123 MRF157
transistors cross reference list

Abstract: MOTOROLA circuit for mrf150 CLASS AB mrf151g 300 MRF166W blf404 BLF246 MRF140 MRF177 sot119a
Text: PHILIPS VDMOS RF-POWER TRANSISTORS CROSS REFERENCE LIST PHILIPS VDMOS vs MOTOROLA TMOS TRANSISTORS Philips Type UHF Motorola Type BLF548 MRF275G MRF275L MRF177 MRF176GU MRF175LU MRF175GU BLF546 MRF166W BLF544 MRF166C BLF542 MRF160 BLF404 BLF521 MRF158 VHF BLF368 MRF141G BLF278 MRF176GV MRF151G BLF248 MRF175GV BLF177 MRF157 MRF154 MRF151 MRF150 Operation Class-B Class-AB Class-AB Class-AB Class-AB Class-AB Class-AB Class-B Class-AB Class-B Class-B


Original
PDF BLF548 MRF275G MRF275L MRF177 MRF176GU MRF175LU MRF175GU BLF546 MRF166W BLF544 transistors cross reference list MOTOROLA circuit for mrf150 CLASS AB mrf151g 300 MRF166W blf404 BLF246 MRF140 MRF177 sot119a
arco 402

Abstract: No abstract text available
Text: ¬ guration • High Voltage Replacement for MRF141G • RoHS Compliant Maximum Ratings Symbol VDSS


Original
PDF VRF141G 175MHz VRF141G 175MHz. 175MHz, MRF141G arco 402
1993 - MRF156

Abstract: AN-1041 Granberg AN1041 mrf155 mrf151g 300 MRF153 MRF154 AN1041/D MRF430
Text: Order this document by AN1041/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN1041 MOUNTING PROCEDURES FOR VERY HIGH POWER RF TRANSISTORS Prepared by: Helge O. Granberg RF Engineering Advanced Products Group RF power semiconductors such as MRF153, MRF154, MRF155, MRF156 and MRF430 are housed in Case 368-01, whereas MRF141G , MRF151G, MRF175G and MRF176G use Case 375-01 (both shown below). All of these are high power devices (200 ­ 600 W), which results in an abnormally large amount


Original
PDF AN1041/D AN1041 MRF153, MRF154, MRF155, MRF156 MRF430 MRF141G, MRF151G, MRF175G AN-1041 Granberg AN1041 mrf155 mrf151g 300 MRF153 MRF154 AN1041/D
tp2304

Abstract: TPV3100 TP9383 MRF2001 TP2330 PT9783 PT9780 tp8828f BLY93A mrf 406 application circuit
Text: LT3046 MRF-134 MRF-136 MRF-137 MRF-138 MRF-140 MRF-141 MRF-141G MRF-148 MRF-150 MRF-151 MRF


Original
PDF AM1214-100 AM1214-200 AM1214-325 AM80912005 AM80912015 AM80912030 AM80912085 AM80912150 AM81214006 AM81214015 tp2304 TPV3100 TP9383 MRF2001 TP2330 PT9783 PT9780 tp8828f BLY93A mrf 406 application circuit
2009 - arco 406

Abstract: arco capacitors 262 4953 vrf141g mosfet 4953 an 4953 MRF141G 4953 mosfet 9v 500ma transformer 2204B
Text: Replacement for MRF141G · RoHS Compliant Maximum Ratings Symbol VDSS ID All Ratings: TC =25°C


Original
PDF VRF141G 175MHz VRF141G 175MHz. 175MHz, MRF141G arco 406 arco capacitors 262 4953 mosfet 4953 an 4953 MRF141G 4953 mosfet 9v 500ma transformer 2204B
867C-05

Abstract: 344C-01 amplifier mrf247 MPX5999D 867B-04 MPX5999D CASE 867B-04 MEMS blood pressure sensor MPX4000 water level pressure sensor for washing machine water differential pressure sensor Motorola transistors MRF454
Text: 13.0/150 65 0.80 211-07/2 MRF141G 300 30.00 10.0/175 55 0.35 375/2 Pout Pin (Max.) G Mfr.’s PE (Min


Original
PDF MRF455 MRF454 MRF247* MPX5100AP 867B-04 MPX5100DP 867C-05 MPX5700DP MPX5700GP 344C-01 amplifier mrf247 MPX5999D 867B-04 MPX5999D CASE 867B-04 MEMS blood pressure sensor MPX4000 water level pressure sensor for washing machine water differential pressure sensor Motorola transistors MRF454
1999 - MRF648

Abstract: TPV3100 2SC2897 macom TP3034 SD1393 tp9383 TP3008 transistor 2sC636 MRF255 equivalent
Text: LTE21009R MHW912 MHW914 MHW916 MRA1600-2 MRF134 MRF136 MRF136Y MRF137 MRF138 MRF141G MRF148


Original
PDF 2N5944 2N5945 2N5946 2N6082 2N6084 2N6439 2SC1257 2SC1258 2SC1259 2SC1605A MRF648 TPV3100 2SC2897 macom TP3034 SD1393 tp9383 TP3008 transistor 2sC636 MRF255 equivalent
Supplyframe Tracking Pixel