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Part Manufacturer Description Datasheet Download Buy Part
LTC6362IDD#TRPBF-ES Linear Technology LTC6362 - Precision, Low Power Rail-to-Rail Input/Output Differential Op Amp/SAR ADC Driver; Package: DFN; Pins: 8; Temperature: I
LTC5541IUH#PBF Linear Technology LTC5541 - 1.3GHz to 2.3GHz High Dynamic Range Downconverting Mixer; Package: QFN; Pins: 20; Temperature Range: -40°C to 85°C
LTC5508ESC6#TR Linear Technology LTC5508 - 300MHz to 7GHz RF Power Detector with Buffered Output in SC70 Package; Package: SC70; Pins: 6; Temperature Range: -40°C to 85°C
LT5516EUF#PBF Linear Technology LT5516 - 800MHz to 1.5GHz Direct Conversion Quadrature Demodulator; Package: QFN; Pins: 16; Temperature Range: -40°C to 85°C
LT5568EUF#TRPBF Linear Technology LT5568 - 700MHz to 1050MHz High Linearity Direct Quadrature Modulator; Package: QFN; Pins: 16; Temperature Range: -40°C to 85°C
LT5579IUH#TRPBF Linear Technology LT5579 - 1.5GHz to 3.8GHz High Linearity Upconverting Mixer; Package: QFN; Pins: 24; Temperature Range: -40°C to 85°C

MRF134 rf model .lib file Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1994 - Triode 805

Abstract: MRF134 zener motorola 1N5925A AN215A AN721
Text: MOTOROLA Order this document by MRF134 /D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF134 N­Channel Enhancement­Mode . . . designed for wideband , R5 - 1.0 M, 2.0 W Carbon Board - G10, 62 mils Figure 1. 150 MHz Test Circuit MRF134 2 RF , . Common Source Scattering Parameters VDS = 28 V, ID = 100 mA MRF134 6 RF DEVICE DATA S11 , Power RF characterization data were measured with a 68 ohm resistor shunting the MRF134 input port. The


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PDF MRF134/D MRF134 MRF134/D* Triode 805 MRF134 zener motorola 1N5925A AN215A AN721
2001 - 527 MOSFET TRANSISTOR motorola

Abstract: vk200* FERROXCUBE MRF134 SELF vk200 Beckman resistor network mrf134 motorola
Text: , Ideally Suited For Class A Operation D MRF134 5.0 W, to 400 MHz N­CHANNEL MOS BROADBAND RF POWER , should be observed. REV 6 MOTOROLA WIRELESS RF , IF AND TRANSMITTER DEVICE DATA MRF134 5.2­3 , MRF134 5.2­4 MOTOROLA WIRELESS RF , IF AND TRANSMITTER DEVICE DATA 10 Pout , OUTPUT POWER (WATTS , Voltage MOTOROLA WIRELESS RF , IF AND TRANSMITTER DEVICE DATA MRF134 5.2­5 6 5 4 150 MHz 3 2 1 0 , Scattering Parameters VDS = 28 V, ID = 100 mA MRF134 5.2­8 MOTOROLA WIRELESS RF , IF AND TRANSMITTER


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PDF MRF134 MRF134 AN215A 527 MOSFET TRANSISTOR motorola vk200* FERROXCUBE SELF vk200 Beckman resistor network mrf134 motorola
1995 - transistor motorola 359

Abstract: Triode 805 AN721 808 power Triode Beckman Industrial zener motorola 1N5925A AN215A MRF134
Text: MOTOROLA Order this document by MRF134 /D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF134 N­Channel Enhancement­Mode . . . designed for wideband , Circuit MRF134 2 MOTOROLA RF DEVICE DATA 5 f = 100 MHz 150 225 400 8 Pout , OUTPUT , /Output Impedances, Zin, ZOL* MOTOROLA RF DEVICE DATA MRF134 5 S11 S21 S12 f (MHz , 0.814 The Power RF characterization data were measured with a 68 ohm resistor shunting the MRF134


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PDF MRF134/D MRF134 MRF134/D* transistor motorola 359 Triode 805 AN721 808 power Triode Beckman Industrial zener motorola 1N5925A AN215A MRF134
2001 - Triode 805

Abstract: Arco 403 MRF134 - 176 MRF134 AN721 AN215A 1N5925A ZENER A34 motorola diode 8296 arco 406
Text: Order this document by MRF134 /D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF134 N­Channel Enhancement­Mode . . . designed for wideband large­signal , The Power RF characterization data were measured with a 68 ohm resistor shunting the MRF134 input port , The Power RF characterization data were measured with a 68 ohm resistor shunting the MRF134 input port , CONSIDERATIONS The MRF134 is a RF power N­Channel enhancement mode field­effect transistor (FET) designed


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PDF MRF134/D MRF134 Triode 805 Arco 403 MRF134 - 176 MRF134 AN721 AN215A 1N5925A ZENER A34 motorola diode 8296 arco 406
Motorola AN211

Abstract: motorola 6810 aN211 MOTorola atc 7515
Text: DESIGN CONSIDERATIONS The MRF134 is a RF power N-Channel enhancement mode field-effect transistor (FET , MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor , Angles With 30:1 VSWR 5.0 W, to 400 MHz N-CHANNEL MOS BROADBAND RF POWER FET · Low Noise Figure - , should be observed. REV 6 MOTOROLA WIRELESS SEMICONDUCTOR SOLUTIONS DEVICE DATA MRF134 4.2-77 , G 1 0 ,62 mils Figure 1.150 MHz Test Circuit MRF134 4.2-78 MOTOROLA WIRELESS SEMICONDUCTOR


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PDF MRF134 68-ohm AN215Afor Motorola AN211 motorola 6810 aN211 MOTorola atc 7515
1994 - MRF134

Abstract: transistor motorola 359 zener motorola 1N5925A AN215A AN721 alc 266
Text: MOTOROLA Order this document by MRF134 /D SEMICONDUCTOR TECHNICAL DATA RF Power , © Motorola, Inc. 1994 DEVICE DATA MRF134 1 PRODUCT TRANSFERRED TO M/A­COM The RF MOSFET Line , /Output Impedances, Zin, ZOL* MOTOROLA RF DEVICE DATA MRF134 5 PRODUCT TRANSFERRED TO M/A­COM , VDS = 28 V, ID = 100 mA MRF134 6 MOTOROLA RF DEVICE DATA PRODUCT TRANSFERRED TO M/A­COM , RF DEVICE DATA MRF134 7 PRODUCT TRANSFERRED TO M/A­COM |S11| 625 ARCHIVE INFORMATION


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PDF MRF134/D MRF134 MRF134/D* MRF134 transistor motorola 359 zener motorola 1N5925A AN215A AN721 alc 266
transistor KA 7808

Abstract: RF134
Text: should be observed REV 6 MRF134 2-270 MOTOROLA RF DEVICE DATA ELECTRICAL CHARACTERISTICS (Tc , , Zjnt , Z q l * MRF134 2 -2 7 4 M O T O R O L A RF D E V IC E DATA f (MHz) 1.0 2.0 5.0 10 20 , D E V IC E DATA M R F 1 34 2 -2 7 7 DESIGN CONSIDERATIONS The MRF134 is a RF power N -C , MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor , , Ideally Suited For Class A · · · · · 5.0 W, to 400 MHz N -CHANNEL MOS BROADBAND RF POWER FET CASE


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PDF MRF134 transistor KA 7808 RF134
transistor 7808

Abstract: No abstract text available
Text: Suited For Class A MRF134 · · · · · 5.0 W, to 400 MHz N-CHANNEL MOS BROADBAND RF POWER FET , _ MRF134 2-198 MOTOROLA RF DEVICE DATA ELECTRICAL CHARACTERISTICS (Tc = 25°C unless , 1.150 MHz Test Circuit MOTOROLA RF DEVICE DATA MRF134 2-199 Pout, OUTPUT POWER (WATTS) Pin , Rated Forward Biased Safe Operating Area MOTOROLA RF DEVICE DATA MRF134 2-201 C 1, C6 - 270 , 62 60 The Power RF characterization data were measured with a 68 ohm resistor shunting the MRF134


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PDF MRF134 MRF134, MRF134 68-ohm AN215A transistor 7808
SELF vk200

Abstract: No abstract text available
Text: should be observed. MOTOROLA RF DEVICE DATA MRF134 2-101 ELECTRICAL CHARACTERISTICS O c = 25 , G10, 62 mils Figure 1.150 MHz Test Circuit MRF134 2-102 MOTOROLA RF DEVICE DATA Pout , RF DEVICE DATA MRF134 2-103 - Pout. OUTPUT POWER (WATTS) - I I I V DD = 28V IdQ = 50 mA , Figure 13. Maximum Rated Forward Biased Sate Operating Area MRF134 2-104 MOTOROLA RF DEVICE DATA , * MOTOROLA RF DEVICE DATA MRF134 2-105 f (MHz) 1.0 2.0 5.0 10 20 30 40 50 60 70 80 90 100 110 120 130


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PDF MRF134 68-ohm AN215A SELF vk200
2009 - AN721

Abstract: MRF134 RF POWER MOSFET AN211A AN215A MRF137 "RF MOSFET"
Text: MRF134 The RF MOSFET Line: Broadband RF Power FET 5.0W, to 400MHz, 28V M/A-COM Products , information contained herein without notice. MRF134 The RF MOSFET Line: Broadband RF Power FET 5.0W, to , . MRF134 The RF MOSFET Line: Broadband RF Power FET 5.0W, to 400MHz, 28V M/A-COM Products Released - , . changes to the product(s) or information contained herein without notice. MRF134 The RF MOSFET Line , information contained herein without notice. MRF134 The RF MOSFET Line: Broadband RF Power FET 5.0W, to


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PDF MRF134 400MHz, AN721 MRF134 RF POWER MOSFET AN211A AN215A MRF137 "RF MOSFET"
1998 - 2SC3355 SPICE MODEL

Abstract: transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101
Text: Vendor Component Libraries RF Transistor Library May 2003 Notice The information contained , Contents 1 RF Transistor Library 2 Packaged BJTs Agilent Technologies Packaged BJTs , iii iv Chapter 1: RF Transistor Library The RF Transistor Library consists of nonlinear , library itself is a binary file named RFTransistorLibrary.library, which can be found in $HPEESOF_DIR/ComponentLibs/models. Note 1-1 RF Transistor Library 1-2 Chapter 2: Packaged BJTs The Packaged


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PDF F2002: F2003: F2004: 2SC3355 SPICE MODEL transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101
1993 - BROADBAND TRANSFORMERS AND POWER

Abstract: erie redcap capacitors MRF317 LINEAR RF AMPLIFIER C band FET transistor s-parameters AN878 MRF317 LINEAR RF BOARD MRF317 linear amplifier AN211A Granberg Arco 403
Text: . References 1 and 2 contain information on this subject. Silicon RF power FETs are generally N-Channel MOS , RF power FET wafers into finished devices is similar to the assembly of bipolar RF power transistors (BPTs). Identical packaging is utilized for both types of devices. ADVANTAGES OF RF POWER FETS , Vdc supply and 45 watts output, the RF Application © Motorola, Inc. 1993 Reports large-signal , with the 125 watt MRF174. The MRF134 5.0 W VHF FET has a typical noise figure of 2.0 dB at 150 MHz


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PDF AN878/D AN878 BROADBAND TRANSFORMERS AND POWER erie redcap capacitors MRF317 LINEAR RF AMPLIFIER C band FET transistor s-parameters AN878 MRF317 LINEAR RF BOARD MRF317 linear amplifier AN211A Granberg Arco 403
2004 - MRF134

Abstract: No abstract text available
Text: MRF134 VHF POWER MOSFET N-Channel Enhancement Mode DESCRIPTION: The ASI MRF134 is intended for use in 28 VDC large signal Applications, from 2.0 to 400 MHz. PACKAGE STYLE .380 4L FLG FEATURES INCLUDE: B .112 x 45° A S · PG = 14 dB Typical at 150 MHz · OmnigoldTM Metalization System · Class-A or AB Ø.125 NOM. FULL R D J .125 G S C D E F MAXIMUM RATINGS I GH ID 0.9 A VDSS 65 V DIM MINIMUM inches / mm inches / mm 65 V A


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PDF MRF134 MRF134
2006 - MRF134-39

Abstract: MRF134 039W
Text: MRF134 -39 VHF POWER MOSFET N-Channel Enhancement Mode DESCRIPTION: The ASI MRF134 -39 is intended for use in 28 VDC large signal Applications, from 2.0 to 400 MHz. PACKAGE STYLE TO-39 FEATURES INCLUDE: · PG = 14 dB Typical at 150 MHz · OmnigoldTM Metalization System · Class-A or AB MAXIMUM RATINGS ID 0.9 A VDSS 65 V VDGR 65 V VGS ±40 V PDISS 17.5 W @ TC = 25 °C TJ -65 °C to +200 °C COMMON SOURCE CONFIGURATION TSTG -65 °C to +150 °C BOTTOM


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PDF MRF134-39 MRF134-39 MRF134 039W
RF MOSFET

Abstract: MRF134
Text: tSsmi-donduato'i ZPtoaucti, {Jnc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212) 227-6005 FAX: (973) 376-8960 The RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode MRF134 . . designed for wideband large-signal , • 5.0 W, to 400 MHz N-CHANNEL MOS BROADBAND RF POWER FET 100% Tested For Load Mismatch At , L4 R3* R4 ' (-7 R2 ^ t RF INPUT]s / • yr* /^l C1 i R5


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PDF MRF134 Arco406, Arco403, Arco402, 5-20pF 1N5925A VK-200 19/4B RF MOSFET MRF134
transistor 5cw

Abstract: transistor 5cw 61 sd1466 transistor 6cw TRANSISTOR REPLACEMENT GUIDE 6CW transistor MS3016 transistor selection guide PH1516-2 STM1645-10
Text: Richardson Electronics 800-737-6937 www.rfpowernet.com RF POWER TRANSISTOR SELECTION GUIDE , 56-57 RF Definitions RF Power Transistor Worksheet Value-Added Capabilities Hot Markets/Products Excess Inventory Sale RF Semiconductors & Active Components Tab 16 Page 58 Tab 17 Page 59 Tab 18 , ST CODE EC GZ MW MY MO SB SF SM RF POWER TRANSISTOR SELECTION GUIDE SUPPLIER STRENGTHS LDMOS Bipolar, custom applications RF MOSFETs Bipolar supplier Market Leader Drop in for


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PDF CDMA2000 2N6084 BLV102 CA5815CS D1020UK LF2810A MRF175LV MSC75652 PH1600-7 SD1466 transistor 5cw transistor 5cw 61 sd1466 transistor 6cw TRANSISTOR REPLACEMENT GUIDE 6CW transistor MS3016 transistor selection guide PH1516-2 STM1645-10
2001 - MHW6181

Abstract: MRF455 APPLICATION NOTES MRF151G MRF9135LS MRF171A MRF374A MRF21180 MRF247 MRF428 amplifier mrf247
Text: 07 0 ,2 R TO C DU N RF AND IF O SC E CH AR ED IV BY LE A C , 1HZ Market Part General Purpose RF SiGe:C LNA and Cascode Amplifier MBC13720, MBC13916 , the SiGe:C module to our mainstream RF BiCMOS process. This option requires the addition of only a , development. O DU N SE C MI RFIC RF BUILDING BLOCKS WIRELESS RADIO FREQUENCY PRODUCT As a leading supplier of semiconductor products, Motorola has an extensive RF portfolio of products that serve


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PDF SPSSG1009/D MBC13720, MBC13916 MRF1535T1, MRF1550T1 MRF373A, MRF373AS, MRF374A, MRF372 MRF9002R1, MHW6181 MRF455 APPLICATION NOTES MRF151G MRF9135LS MRF171A MRF374A MRF21180 MRF247 MRF428 amplifier mrf247
2N4427 equivalent bfr91

Abstract: bfr90 equivalent 2N5503 TPV-595A MRA1600-30 2N3553 equivalent MRF477 equivalent MRA0500-19L MOTOROLA TRANSISTOR MRF239 2N6084 equivalent
Text: RF Power TMOS FETs Motorola RF Power MOSFETs, (trademark TMOS), are constructed using a planar , insulated gate which controls vertical current flow. Compared with bipolar transistors, RF Power FETs , in this section are specified for operation in RF Power Amplifiers and are grouped by frequency range , Power Typical Watts Device V D D = 2 8 V o lts MRF134 MRF136 MRF136Y MRF137 MRF141 MRF141G MRF171 , introductions M O T O R O L A R F D E V IC E DATA 1-3 RF Power Bipolar Transistors Motorola's broad


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PDF PoweS3666 MRF3866 2N2857 2N3866 2N5943 MRF904 MRF571 2N4958 2N3160 2N5583 2N4427 equivalent bfr91 bfr90 equivalent 2N5503 TPV-595A MRA1600-30 2N3553 equivalent MRF477 equivalent MRA0500-19L MOTOROLA TRANSISTOR MRF239 2N6084 equivalent
Motorola transistors MRF 947

Abstract: transistor C5386 trimpots 3296 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 ic cd 2399 gp MM1662 motorola MRF 452 RF TRANSISTOR Motorola transistors MRF 486 replace
Text: ) MOTOROLA RF Device Data This publication presents technical information for the several product families that comprise the Motorola portfolio of RF Products. The product families include bipolar, LDMOS, MOSFET RF Power, and gallium arsenide chip technologies in a variety of ceramic and plastic surface , of complexity in an effort to provide RF solutions to our customers’ RF needs. This edition , Motorola RF Products. Motorola reserves the right to make changes, without further notice, to any products


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PDF 2PHX11136Q-17 Motorola transistors MRF 947 transistor C5386 trimpots 3296 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 ic cd 2399 gp MM1662 motorola MRF 452 RF TRANSISTOR Motorola transistors MRF 486 replace
chw marking sot23

Abstract: sps 1951 transistor trimmer electron 3296 bw 9028 transistor smd marking BA rn ph 4148 zener diode
Text: . viii Chapter One Selector G u id e . 1.1-1 Chapter Two RF , : Selector Guide, Section Two: Data Sheets Chapter Three RF /IF Integrated Circuits , (Alphanumeric) .viii Chapter Four RF , Section One: Selector Guide, Section Two: Data Sheets Chapter Five RF Amplifier M Section One: Selector Guide, Section Two: Data Sheets Chapter Six RF CATV Distribution Amplifiers


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PDF
2001 - MOTOROLA SCR 1725

Abstract: 732 160 16 capactor for video card matsushita compressor capacitor MATSUSHITA compressor codes manhattan CATV sansui tv diagram arm cc 1800 39p MRF373 PUSH PULL IC 741 OPAMP DATASHEET MPS901
Text: DL110/D REV 12 Wireless RF , IF and Transmitter Device Data Contents at a Glance Wireless RF , IF and Transmitter Device Data Device Index (Alphanumeric) . . . . . . . . . . . . . . . . . . . , . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.1­1 Chapter Two RF Front End ICs . . . , : Selector Guide, Section Two: Data Sheets Chapter Three RF /IF Subsystem ICs . . . . . . . . . . . . . . , Chapter Five RF Discrete Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


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PDF DL110/D MOTOROLA SCR 1725 732 160 16 capactor for video card matsushita compressor capacitor MATSUSHITA compressor codes manhattan CATV sansui tv diagram arm cc 1800 39p MRF373 PUSH PULL IC 741 OPAMP DATASHEET MPS901
MRF9742

Abstract: MOTOROLA MASTER SELECTION GUIDE RF MHW591 MHW707-2 mhw593 MHW704 MHW592 MRF947T1 equivalent MHW707-1 MRF9282T1
Text: RF Products In Brief . . . While Motorola is considered to be the supermarket for , in products designed for RF system applications. From MOS, bipolar power and signal transistors to integrated circuits, Motorola's RF components cover the entire spectrum from HF to microwave to personal , . How to Use This Selector Guide This new selector guide combines the RF products of Motorola Phoenix , . Motorola Master Selection Guide 5.10­1 Page RF Discrete Transistors . . . . . . . . . . . . . . . .


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PDF MHW1184L MHW1224L MHW1254L MHW1304L MRF9742 MOTOROLA MASTER SELECTION GUIDE RF MHW591 MHW707-2 mhw593 MHW704 MHW592 MRF947T1 equivalent MHW707-1 MRF9282T1
2004 - MMH3101

Abstract: MRF1550 ar164 uhf amplifier design MRF454 motorola mrf5015 MOTOROLA SELECTION mrf150 bts 425 l1 MRF247 MRF648
Text: Freescale's first LDMOS RF IC High Power product model . This model is designed for the MW4IC2230MB device , available in the RF High Power Model Library (Root and MET) include package, bond wire and internal matching network effects. The MET LDMOS model for RF High Power LDMOS transistors and RF ICs is a , heating effects of device performance. It is specifically tailored to model high power RF LDMOS , Design Environment and Eagleware GENESYS Microwave and RF Design Suite, the MET LDMOS model is capable


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PDF SG46/D xx/2004 MMH3101 MRF1550 ar164 uhf amplifier design MRF454 motorola mrf5015 MOTOROLA SELECTION mrf150 bts 425 l1 MRF247 MRF648
1996 - MHW707-2

Abstract: MRF947T1 equivalent MHW707-1 mhw704 CR2428 MHW591 MHW592 MHW593 MHW707 MRF861
Text: RF Products In Brief . . . While Motorola is considered to be the supermarket for , in products designed for RF system applications. From MOS, bipolar power and signal transistors to integrated circuits, Motorola's RF components cover the entire spectrum from HF to microwave to personal , . How to Use This Selector Guide This new selector guide combines the RF products of Motorola Phoenix , Semiconductor Sales office or 1-800-521-6274. Motorola Master Selection Guide 5.10­1 Page RF Discrete


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PDF 714U/1 MHLW8000 MHW707-2 MRF947T1 equivalent MHW707-1 mhw704 CR2428 MHW591 MHW592 MHW593 MHW707 MRF861
2003 - Motorola transistors MRF646

Abstract: 100 watt hf transistor 12 volt Motorola transistors MRF648 vhf linear pulse power amplifier 32 pins qfn 5x5 footprint "Good RF Construction Practices and Techniques" transistor BR 471 A 4 bit dac MOTOROLA SELECTION mrf150 linear amplifier 470-860
Text: Designs. RF LDMOS Models Motorola continues to populate its LDMOS Model Library with the LDMOS MET , . The Motorola Electro Thermal (MET) model for RF LDMOS transistors is a nonlinear model that examines , performance. It is specifically tailored to model high power RF LDMOS transistors used in wireless base , GENESYS Microwave and RF Design Suite, the MET LDMOS model is capable of performing small-signal , Eagleware GENESYS Microwave and RF Design Suite The LDMOS Model Library is available for all major


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PDF SG46/D Motorola transistors MRF646 100 watt hf transistor 12 volt Motorola transistors MRF648 vhf linear pulse power amplifier 32 pins qfn 5x5 footprint "Good RF Construction Practices and Techniques" transistor BR 471 A 4 bit dac MOTOROLA SELECTION mrf150 linear amplifier 470-860
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