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Part Manufacturer Supplier Stock Best Price Price Each Buy Part
MPSW56 Fairchild Semiconductor Corporation Rochester Electronics 11,133 $0.16 $0.13
MPSW56 Motorola Semiconductor Products Bristol Electronics 1,660 $0.45 $0.09
MPSW56RLRAG ON Semiconductor Allied Electronics & Automation - $0.14 $0.10
MPSW56RLRAG ON Semiconductor Rochester Electronics 311,397 $0.13 $0.10
MPSW56RLRAG ON Semiconductor Chip1Stop 28 $0.35 $0.35
MPSW56RLRAG ON Semiconductor Wuhan P&S 500 $0.15 $0.10
MPSW56RLRP ON Semiconductor Rochester Electronics 292,000 $0.11 $0.09
MPSW56RLRPG ON Semiconductor Rochester Electronics 173,499 $0.13 $0.10

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MPSW56 datasheet (12)

Part Manufacturer Description Type PDF
MPSW56 Fairchild Semiconductor PNP General Purpose Amplifier Original PDF
MPSW56 Fairchild Semiconductor PNP General Purpose Amplifier Original PDF
MPSW56 On Semiconductor One Watt Amplifier Transistors(PNP Silicon) Original PDF
MPSW56 Motorola European Master Selection Guide 1986 Scan PDF
MPSW56 Others Cross Reference Datasheet Scan PDF
MPSW56 Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
MPSW56 Others Shortform Data and Cross References (Misc Datasheets) Scan PDF
MPSW56 National Semiconductor PNP General Purpose Amplifier Scan PDF
MPSW56RLRA On Semiconductor One Watt Amplifier Transistor PNP Original PDF
MPSW56RLRAG On Semiconductor One Watt Amplifier Transistors; Package: TO-92 (TO-226) 7.87mm Body Height 1Watt; No of Pins: 3; Container: Tape and Reel; Qty per Container: 2000 Original PDF
MPSW56RLRP On Semiconductor One Watt Amplifier Transistor PNP Original PDF
MPSW56RLRPG On Semiconductor One Watt Amplifier Transistors; Package: TO-92 (TO-226) 7.87mm Body Height 1Watt; No of Pins: 3; Container: Tape and Ammunition Box; Qty per Container: 2000 Original PDF

MPSW56 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2006 - MPSW55

Abstract: MPSW56
Text: ON Semiconductort MPSW55 MPSW56 One Watt Amplifier Transistors PNP Silicon w These , contact your local ON Semiconductor sales office or representative. MPSW56 is a Preferred Device MAXIMUM RATINGS Symbol MPSW55 MPSW56 Unit Collector -Emitter Voltage Rating VCEO -60 , ) MPSW55 MPSW56 Emitter -Base Breakdown Voltage (IE = -100 mAdc, IC = 0) V(BR)CEO V(BR)EBO Collector Cutoff Current (VCE = -40 Vdc, IB = 0) (VCE = -60 Vdc, IB = 0) MPSW55 MPSW56 Collector


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PDF MPSW55 MPSW56 MPSW56 MPSW55/D MPSW55
2010 - MPSW55

Abstract: MPSW55G MPSW56 MPSW56RLRP MPSW56RLRPG
Text: MPSW55, MPSW56 One Watt Amplifier Transistors PNP Silicon http://onsemi.com Features · , Unit Collector -Emitter Voltage MPSW55 MPSW56 VCEO -60 -80 Collector -Base Voltage MPSW55 MPSW56 VCBO -60 -80 Vdc VEBO -4.0 Vdc Collector Current - Continuous IC , ) 2000/Tape & Reel TO-92 2000/Ammo Pack TO-92 (Pb-Free) 2000/Ammo Pack MPSW56RLRP MPSW56RLRPG *For additional information on our Pb-Free strategy and soldering details, please download the


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PDF MPSW55, MPSW56 MPSW55 MPSW55/D MPSW55 MPSW55G MPSW56 MPSW56RLRP MPSW56RLRPG
2010 - Not Available

Abstract: No abstract text available
Text: /Ammo Pack TO−92 (Pb−Free) 2000/Ammo Pack MPSW56RLRP MPSW56RLRPG *For additional , MPSW55, MPSW56 One Watt Amplifier Transistors PNP Silicon http://onsemi.com Features â , Unit Collector −Emitter Voltage MPSW55 MPSW56 VCEO −60 −80 Collector −Base Voltage MPSW55 MPSW56 VCBO −60 −80 Vdc VEBO −4.0 Vdc Collector Current â , , BRD8011/D. Publication Order Number: MPSW55/D MPSW55, MPSW56 ELECTRICAL CHARACTERISTICS (TA = 25Â


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PDF MPSW55, MPSW56 MPSW55 MPSW55/D
2001 - MPSW55

Abstract: MPSW56
Text: 8.0 2.5 20 ­55 to +150 MPSW56 ­80 ­80 Unit Vdc Vdc Vdc mAdc Watt mW/°C Watts mW/°C °C MPSW55 MPSW56 MPSW56 is a Preferred Device 1 2 3 CASE 29­10, STYLE 1 TO­92 (TO­226AE) THERMAL , . Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. MPSW55 MPSW56 ICBO MPSW55 MPSW56 IEBO - - - ­0.1 ­0.1 ­0.1 µAdc V(BR)CEO MPSW55 MPSW56 V(BR)EBO ICES - - ­0.5 ­0.5 µAdc ­60 ­80 ­4.0 - - - Vdc µAdc , Order Number: MPSW55/D MPSW55 MPSW56 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted


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PDF MPSW55 MPSW56 MPSW55 MPSW56 226AE)
Not Available

Abstract: No abstract text available
Text: Transistors MPSW55 MPSW56 * PNP Silicon COLLECTOR 3 *Motorola Preferred Device 2 BASE 1 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol MPSW55 MPSW56 Collector – Emitter , Voltage(1) (IC = –1.0 mAdc, IB = 0) V(BR)CEO MPSW55 MPSW56 Emitter – Base Breakdown Voltage , –60 Vdc, IB = 0) MPSW55 MPSW56 Collector Cutoff Current (VCB = –40 Vdc, IE = 0) (VCB = –60 Vdc, IE = 0) MPSW55 MPSW56 µAdc ICBO IEBO Vdc µAdc ICES Emitter


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PDF MPSW55/D MPSW55 MPSW56* MPSW56 MPSW55/D*
Not Available

Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA One Watt Amplifier Transistors MPSW55 MPSW56 * PNP , Symbol E m itter-B ase Voltage MPSW56 Unit -6 0 -8 0 Vdc VCBO C ollector-B ase , mAdc, I b = 0) Vdc v (BR)CEO MPSW55 MPSW56 E m itter-Base Breakdown Voltage (IE = -1 0 0 , , lg = 0) MPSW55 MPSW56 Collector Cutoff Current (Vc b = -4 0 Vdc, lE = 0) (V c b = -6 0 Vdc, I e = 0) MPSW55 MPSW56 ^4.0 — — v (BR)EBO - -0 .5 -0 .5 |iAdc â


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PDF MPSW55 MPSW56* MPSW56 QCH3477 MPSW55 b3b7255
1996 - MPSW56

Abstract: MPSW55
Text: Transistors MPSW55 MPSW56 * PNP Silicon COLLECTOR 3 *Motorola Preferred Device 2 BASE 1 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol MPSW55 MPSW56 Collector ­ Emitter Voltage , Collector ­ Emitter Breakdown Voltage(1) (IC = ­1.0 mAdc, IB = 0) V(BR)CEO MPSW55 MPSW56 Emitter ­ , Vdc, IB = 0) (VCE = ­60 Vdc, IB = 0) MPSW55 MPSW56 Collector Cutoff Current (VCB = ­40 Vdc, IE = 0) (VCB = ­60 Vdc, IE = 0) MPSW55 MPSW56 µAdc ICBO IEBO Vdc µAdc ICES


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PDF MPSW55/D MPSW55 MPSW56* MPSW56 MPSW55/D* MPSW56 MPSW55
2001 - Not Available

Abstract: No abstract text available
Text: -60 -60 -4.0 -500 1.0 8.0 2.5 20 - 55 to +150 MPSW56 -80 -80 Unit Vdc Vdc Vdc mAdc Watt mW/°C Watts mW/°C °C MPSW55 MPSW56 MPSW56 is a Preferred Device 1 2 3 CASE 29-10, STYLE 1 TO-92 (TO , Vdc, IC = 0) 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. MPSW55 MPSW56 ICBO MPSW55 MPSW56 IEBO - - - -0.1 -0.1 -0.1 µAdc V(BR)CEO MPSW55 MPSW56 V(BR)EBO ICES - - -0.5 -0.5 µAdc -60 -80 , Rev. 2 Publication Order Number: MPSW55/D MPSW55 MPSW56 ELECTRICAL CHARACTERISTICS (TA = 25


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PDF MPSW55 MPSW56 MPSW56 O-226AE) RqJ-500
2001 - Not Available

Abstract: No abstract text available
Text: 8.0 2.5 20 ­55 to +150 MPSW56 ­80 ­80 Unit Vdc Vdc Vdc mAdc Watt mW/°C Watts mW/°C °C MPSW55 MPSW56 MPSW56 is a Preferred Device 1 2 3 CASE 29­10, STYLE 1 TO­92 (TO­226AE) THERMAL , . Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. MPSW55 MPSW56 ICBO MPSW55 MPSW56 IEBO - - - ­0.1 ­0.1 ­0.1 µAdc V(BR)CEO MPSW55 MPSW56 V(BR)EBO ICES - - ­0.5 ­0.5 µAdc ­60 ­80 ­4.0 - - - Vdc µAdc , Publication Order Number: MPSW55/D MPSW55 MPSW56 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise


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PDF MPSW55 MPSW56 MPSW55 MPSW56 226AE) r14525 MPSW55/D
Not Available

Abstract: No abstract text available
Text: MPSW55 -6 0 -6 0 -4 .0 - 500 1.0 8.0 2.5 20 - 55 to +150 MPSW56 -8 0 -8 0 Unit Vdc Vdc Vdc m Adc W att m , - 15 MHz pF h FE 100 50 v CE(sat) v BE(on) - - 05 - 1 .2 Vdc Vdc - MPSW55 MPSW56 lCBO MPSW55 MPSW56 'e b o - _ - I Symbol Min M ax [ Unit v {BR)CEO MPSW55 MPSW56 v !BR)EBO , SMALL-SIGNAL TRANSISTORS, FETs AND DIODES 2-377 MPSW55, MPSW56 FIGURE 1 D C C U R R EN T G AIN lc. C , SMALL-SIGNAL TRANSISTORS, FETs AND DIODES 2-378 MPSW55, MPSW56 FIGURE 6 C U R R EN T G AIN · B A N D W ID


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PDF MPSW55 MPSW56 MPSW55, MPSW56
2000 - MPSW56

Abstract: No abstract text available
Text: MPSW56 MPSW56 C TO-226 B E PNP General Purpose Amplifier This device is designed , Units MPSW56 1.0 8.0 50 W mW/°C °C/W 125 °C/W Thermal Resistance, Junction to , cm . 2 2000 Fairchild Semiconductor Corporation MPSW56 , Rev A (continued) Electrical , °C 0.1 - 40 ºC 125 ºC 0.01 10 100 I C - COLLECTOR CURRENT (mA) P 1000 MPSW56 , 100 MPSW56 PNP General Purpose Amplifier (continued) Typical Characteristics


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PDF MPSW56 O-226 MPSW56
2001 - MPSW55

Abstract: MPSW56
Text: ON Semiconductort MPSW55 MPSW56 * One Watt Amplifier Transistors PNP Silicon *ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol MPSW55 MPSW56 Unit , , IB = 0) V(BR)CEO MPSW55 MPSW56 Emitter­Base Breakdown Voltage (IE = ­100 mAdc, IC = 0) V , MPSW56 Collector Cutoff Current (VCB = ­40 Vdc, IE = 0) (VCB = ­60 Vdc, IE = 0) MPSW55 MPSW56 , Industries, LLC, 2001 March, 2001 ­ Rev. 1 1 Publication Order Number: MPSW55/D MPSW55 MPSW56


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PDF MPSW55 MPSW56* MPSW56 r14525 MPSW55/D MPSW55 MPSW56
2000 - PR79

Abstract: mpsw56 transistor CBVK741B019 F63TNR MPSW56 PN2222N s773
Text: MPSW56 MPSW56 C TO-226 B E PNP General Purpose Amplifier This device is designed , Units MPSW56 1.0 8.0 50 W mW/°C °C/W 125 °C/W Thermal Resistance, Junction to , cm . 2 2000 Fairchild Semiconductor Corporation MPSW56 , Rev A (continued) Electrical , °C 0.1 - 40 ºC 125 ºC 0.01 10 100 I C - COLLECTOR CURRENT (mA) P 1000 MPSW56 , 100 MPSW56 PNP General Purpose Amplifier (continued) Typical Characteristics


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PDF MPSW56 O-226 PR79 mpsw56 transistor CBVK741B019 F63TNR MPSW56 PN2222N s773
Not Available

Abstract: No abstract text available
Text: MPSA56/ MPSW56 /MMBTA56 £ 5 | National m im Semiconductor MPSA56 MPSW56 MMBTA56 (C N ^ c / iJ if M B. ir È TL/G/10100-1 ! 7^7 TO-236 (SOT- 23) 10-92 c TO- 226AE Tl/G/10100-5 8c TL/G/10100-4 PNP General Purpose Amplifier Electrical Characteristics Symbol OFF CHARACTERISTICS v (BR)CEO = 25°c unless otherwise noted Parameter Min Max Units Collector-Emitter Breakdown Voltage, (Note 1) (lc = 1.0 mAdc, lB = 0) 80 Vdc Vdc 0.1 ixAdc v (BR)EBO


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PDF MPSA56/MPSW56/MMBTA56 MPSA56 MPSW56 MMBTA56 TL/G/10100-1 O-236 226AE Tl/G/10100-5 TL/G/10100-4
mpsw56 transistor

Abstract: ic-250mA MPSW56
Text: MPSW56 MPSW56 TRANSISTOR (PNP) TO-92 FEATURES Power dissipation 1. EMITTER PCM: 1 W (Tamb=25) 2. BASE Collector current ICM: -500 mA Collector-base voltage -80 V V(BR)CBO: Operating and storage junction temperature range 3. COLLECTOR 1 2 3 TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Symbol unless otherwise specified) Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic=-100µA, IE


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PDF MPSW56 -50mA -250mA -250mA, -10mA mpsw56 transistor ic-250mA MPSW56
Not Available

Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA One Watt Amplifier Transistors PNP Silicon COLLECTOR MPSW55 MPSW56 * 3 `Motorola Preferred Device 1 EMITTER MAXIMUM RATINGS Rating C o llecto r , -6 0 -6 0 MPSW56 -8 0 -8 0 Unit Vdc Vdc Vdc mAdc Watt m W /cC Watts m W /"C ·>C - 4 .0 -5 , value. Motorola Small-Signal Transistors, FETs and Diodes Device Data 2 -7 0 7 MPSW55 MPSW56 , Diodes Device Data MPSWSS MPSW56 0 VB. TEMPERATURE COEFFICIENT (mV/°C) IC. COLLECTOR CURRENT (mA


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PDF MPSW55 MPSW56* MPSW55 MPSW56
MPSW

Abstract: No abstract text available
Text: j- T Stg Tq 25' C Symbol v CEO v CB O v EBO >C Pd MPSW55 60 - 60 MPSW56 -8 0 80 4.0 Unit V dc V dc V dc m Adc W a tt m w rc W a tts m W /°C MPSW55 MPSW56 * CASE 29-05, STYLE 1 TO


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PDF MPSW55 MPSW56 MPSW55 MPSW56* O-226AE) MPSW
ztx450 equivalent

Abstract: transistor equivalent ZTX651 ztx650 equivalent MPS651 equivalent MPS751 equivalent ztx751 equivalent ZTX749 equivalent transistor ztx MPSW92 equivalent ZTX Zetex
Text: MPSW51A MPSW55 MPSW56 MPSW60 MPSW92 MPSW93 TN2017 TN2102 TN2218A TN2219 TN2219A TN 2270 TN 3020 TN3053


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PDF 2N6714 2N6715 2N6716 2N6717 2N6718 2N6719 2N6720 2N6721 2N6722 2N6723 ztx450 equivalent transistor equivalent ZTX651 ztx650 equivalent MPS651 equivalent MPS751 equivalent ztx751 equivalent ZTX749 equivalent transistor ztx MPSW92 equivalent ZTX Zetex
MMBTA56

Abstract: MPSW56
Text: NATL SEMICOND DISCRETE National Semiconductor MPSW56 HE D J bSD1130 0D37S71 3 I T'tt-ZI MMBTA56 TO-92 T0 - 226AE TUG/10100-S ■o (A > in o> T> to € CJl o> § 01 a> TL/G/10100-1 TUQ/10100-4 PNP General Purpose Amplifier Electrical Characteristics ta = 25°c unless otherwise noted Symbol Parameter Mln Max Units OFF CHARACTERS ncs V(BR)CEO Collector-Emitter Breakdown Voltage, (Note 1) (lc = 1.0 mAdc, I b = 0) 80 Vdc V(BR)EBO Emitter-Base Breakdown Voltage (lE = 100


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PDF MPSW56 bSD1130 0D37S71 MMBTA56 226AE TUG/10100-S TL/G/10100-1 TUQ/10100-4 MMBTA56 MPSW56
BDB04

Abstract: BDC01C BDC01B BDC01A BDB02A BDB028 BDB01B BDB01A BDC02A T092
Text: 50 200 MPSW56 EBC P 80 0.5 100 60 80 — 50 1 0.5 250 10 50 250 MOTOROLA EUROPEAN MASTER SELECTION


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PDF BDC01A BDC02A BDB01A BDB02A BDC01B BDC02B BDB01B BDB028 BDC01C BDC02C BDB04 T092
2001 - BC237

Abstract: 2n2904 2n2905
Text: 3 2 BASE 1 EMITTER MPSW55 MPSW56 * *Motorola Preferred Device MAXIMUM RATINGS Rating , ­60 ­60 ­4.0 ­500 1.0 8.0 2.5 20 ­ 55 to +150 MPSW56 ­80 ­80 Unit Vdc Vdc Vdc mAdc Watt mW/°C Watts mW , ) Emitter Cutoff Current (VEB = ­3.0 Vdc, IC = 0) 1. Pulse Test: Pulse Width MPSW55 MPSW56 ICBO MPSW55 MPSW56 IEBO - - - ­0.1 ­0.1 ­0.1 µAdc V(BR)CEO MPSW55 MPSW56 V(BR)EBO ICES - - ­0.5 ­0.5 µAdc ­60 , Diodes Device Data 2­707 MPSW55 MPSW56 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise


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PDF MPSW55 MPSW56* MPSW55 MPSW56 226AE) Ther218A MSC1621T1 MSC2404 MSD1819A MV1620 BC237 2n2904 2n2905
ANSI Y14.5

Abstract: MAL100
Text: ,?ymbol I MPSW05 TA = 25°C @ Tc = 25°C - mAdc and MPSW56 -. ,tl,J .t\{,>iF,.*= .',.


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PDF MPSW05 MPSW06 MPSW56 1d805 0S5833 ANSI Y14.5 MAL100
2001 - Not Available

Abstract: No abstract text available
Text: MPSW56 -2.0 -5.0 -10 -20 -60 -80 -100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 6. Current-Gain -


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PDF MPS6729 O-226) MPSW55 MPSW56
2004 - BC327 SOT 23

Abstract: PZT2222AT1 BC639 sot
Text: Bipolar Transistors High Current Transistors (w 500 mA) NPN - BC489 BC639 BC489A BC489B BC639-16 BC447 MPS8099 MPSA06 - MPS651 BC637 BC487 BC487B MPSA05 - BC635 BC337 BC337-16 BC337-25 BC337-40 MPS2222A 2N4401 MPS6602 MPS2222 BC338-25 BC368 - MPSW06 MPS6717 MPSW05 MPSW01A MPS6727 MPSW01 MPS6726 PNP MPSL51 BC490 BC640 BC490A BC490B BC640-16 - MPS8599 MPSA56 MPS6729 MPS751 BC638 - BC488B MPSA55 MPS2907A BC636 BC327 BC327-16 BC327-25 BC327-40 - 2N4403 MPS6652 - - BC369 MPS6729 MPSW56 - MPSW55 MPSW51A -


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PDF BC489 BC639 BC489A BC489B BC639-16 BC447 MPS8099 MPSA06 MPS651 BC637 BC327 SOT 23 PZT2222AT1 BC639 sot
2001 - mpsw56 transistor

Abstract: No abstract text available
Text: -10 -1.0 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT MPSW55 MPSW56 -2.0 -5.0 -10 -20 -60 -80


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PDF MPS6729 MPSW55 MPSW56 mpsw56 transistor
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