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MPS8097 datasheet (11)

Part ECAD Model Manufacturer Description Type PDF
MPS8097 MPS8097 ECAD Model Crimson Semiconductor Transistor Selection Guide Scan PDF
MPS8097 MPS8097 ECAD Model Micro Electronics Semiconductor Device Data Book Scan PDF
MPS8097 MPS8097 ECAD Model Micro Electronics NPN SILICON PLANAR EPITAXIAL TRANSISTOR Scan PDF
MPS8097 MPS8097 ECAD Model Motorola Semiconductor Data Library Volume 3 1974 Scan PDF
MPS8097 MPS8097 ECAD Model Others Shortform Transistor PDF Datasheet Scan PDF
MPS8097 MPS8097 ECAD Model Others Cross Reference Datasheet Scan PDF
MPS8097 MPS8097 ECAD Model Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
MPS8097 MPS8097 ECAD Model Others Semiconductor Master Cross Reference Guide Scan PDF
MPS8097 MPS8097 ECAD Model Others Shortform Data and Cross References (Misc Datasheets) Scan PDF
MPS8097 MPS8097 ECAD Model Samsung Electronics NPN (AMPLIFIER TRANSISTOR) Scan PDF
MPS8097C MPS8097C ECAD Model Others Semiconductor Master Cross Reference Guide Scan PDF

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2sc 5200 transistor data

Abstract: a 1023 transistor 2SC 968 NPN Transistor transistor noise transistor 1012 IC ADC 3511 MPS8097 2sc 965 transistor afy2
Text:  MPS8097 (SILICON) NPN SILCON ANNULAR LOW-NOISE, HIGH-GAIN AMPLIFIER TRANSISTOR . . designed , 2.670 o.oeo 0.105 case 29-02 to-92 965 MPS8097 (continued) ELECTRICAL CHARACTERISTICS (TA - 25 , frequency at which jhfe| extrapolates to unity. 966 MPS8097 (continued) FIGURE 1 - TRANSISTOR NOISE MODEL , input of an MPS-8097 for a collector current of 1.0 mA and a source impedance of 1.0 Kilohm at a , . 967 MPS8097 (continued) NOISE CHARACTERISTICS (Vce " 5.0 Vdc. TA - 2S°C) NOISE VOLTAGE FIGURE 2


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PDF MPS8097 2sc 5200 transistor data a 1023 transistor 2SC 968 NPN Transistor transistor noise transistor 1012 IC ADC 3511 MPS8097 2sc 965 transistor afy2
Not Available

Abstract: No abstract text available
Text: CRO MPS8097 NPN SILICON TRANSISTOR T0-92A DESCRIPTION MPS8097 is NPN silicon planar epitaxial transistor designed fo r general purpose applications. •» » EBC ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Continuous Power Dissipation Operating & Storage Junction Temperature 40V 40V 6V 200mA 350mW -55 to +150°C V cbo V ceo V ebo lc Pd TjTstg ELECTRICAL CHARACTERISTICS (Ta=25°C) 10 lA i


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PDF MPS8097 T0-92A MPS8097 200mA 350mW 4351llector-Emitter Oct-96 100mA 100MHz
T0-92A

Abstract: MPS8097
Text: DESCRIPTION MPS8097 is NPN silicon plapar epitaxial transistor designed for general purpose applications. MPS8097 NPN SILICON TRANSISTOR T0-92A C3 EBC ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Continuous Power Dissipation Operating & Storage Junction Temperature Vcbo Vceo Vebo lc Pd TjTstg 40V 40V 6V 200mA 350mW -55 to +150°C ELECTRICAL CHARACTERISTICS (Ta=25°C) PARAMETER SYMBOL MIN MAX UNIT TEST CONDITIONS Collector-Emitter Breakdown Voltage


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PDF MPS8097 T0-92A 200mA 350mW 100mA Ic-10
3075D

Abstract: No abstract text available
Text: G E SOLID STATE Signal Transistors St DE | 3075DÛ1 0008072 U | ' T - 2 7 - ^ r- j e Silicon MPS8097.98 Transistors The General Electric MPS8097 and MPS8098 are silicon NPN passivated, planar, epitaxial transistors designed for use in low-noise, low-level amplifier applications. 1,2 y TO-92 absolute maximum ratings: (TA = 2 5 ° a Voltages C ollector to Em itter Em itter to Base C ollecter to Base Current Collector Dissipation Total Pow er (Tc < 25 °C) Total Pow er (TA


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PDF 3075D MPS8097 MPS8098 PS8097 PS8098 100mA, 100/1A, 100MHz)
TRANSISTOR 2341

Abstract: T0-92A MPS8097
Text: IVI DESCRIPTION MPS8097 is NPN silicon planar epitaxial transistor designed for general purpose applications. SILICON TRANSISTOR T0-92A S EBC ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Continuous Power Dissipation Operating & Storage Junction Temperature Vcbo Vceo Vebo lc Pd Tjjstg 40V 40V 6V 200mA 350mW -55 to +150°C ELECTRICAL CHARACTERISTICS (Ta=25°C) PARAMETER SYMBOL MIN MAX UNIT TEST CONDITIONS


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PDF MPS8097 T0-92A 200mA 350mW 100pA Oct-96 100mA 100MHz Width300 TRANSISTOR 2341 T0-92A
2N6429

Abstract: J 2N2484 mpsa18 2N642B 2N2484 motorola MPS-A09 MPSA09 MPS-6571 2N2483 SILICON SMALL-SIGNAL DICE
Text: MOTOROLA SC -CDIODES/OPTOJ 34 DE J t>3fc.725S 0037T7t. 6367255 ^ * MOTOROLA SC . * 3' . 1 (DIODES/OPTO) 34C 37976 SILICON SMALL-SIGNAL TRANSISTOR DICE (continued) DIE NO. - NPN LINE SOURCE - DMB102 This die provides performance similar to that of the following device types: 2N2483 2N2484 2N5089 2N5209 2N5210 2N642B 2N6429 MMCM2484 MMT70 MMT2484 MPS6571 MPS8097 MPSA09 MPSA18 2C2484 Designed for low-level, low-noise amplifier applications. METALLIZATION - Top


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PDF 0037T7t. DMB102 2N2483 2N2484 2N5089 2N5209 2N5210 2N642B 2N6429 MMCM2484 J 2N2484 mpsa18 2N2484 motorola MPS-A09 MPSA09 MPS-6571 SILICON SMALL-SIGNAL DICE
2n5088 transistor

Abstract: mps8097 2N5088 LC100A I2921 MPS-8097
Text: SAMSUNG SEMICONDUCTOR INC IME D 17*^4142 000735b 5 MPS8097 NPN EPITAXIAL SILICON TRANSISTOR " ' < ï-29-21 AMPLIFIER TRANSISTOR • Collector-Emitter Voltage: V«o=40V • Collector Dissipation: Pc (max)=625mW ABSOLUTE MAXIMUM RATINGS (Ta =25°C) Characteristic Symbol Rating " Unit Collector-Base Voltage Veso 60 V Collector-Emitter Voltage VcEO 40 V Emitter-Base Vfaltage VebO 6 V Collector Current Ic 200 mA - Collector Dissipation Pc 625 mW Junction Temperature Tj 150 °C Storage Temperature


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PDF 000735b MPS8097 625mW 2N5088 100/jA, 10KSJ 2n5088 transistor LC100A I2921 MPS-8097
Not Available

Abstract: No abstract text available
Text: MPS8097 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V(BR)CEO (V)40 V(BR)CBO (V)60 I(C) Max. (A)200m Absolute Max. Power Diss. (W)625m’ Maximum Operating Temp (øC)150õ I(CBO) Max. (A)30n @V(CBO) (V) (Test Condition)40 V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition) h(FE) Min. Current gain.250 h(FE) Max. Current gain.700 @I(C) (A) (Test Condition)100u @V(CE) (V) (Test Condition)5.0 f(T) Min. (Hz) Transition Freq100M @I(C) (A) (Test Condition) @V(CE) (V


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PDF MPS8097 Freq100M
Not Available

Abstract: No abstract text available
Text: 12 12 12 MPS6576 MPS8097 MPS8098 MPS8598 MPS9410 N N N P N TO-92A TO-92A TO


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PDF MPS2716 MPS2923 MPS2924 MPS2925 MPS2926 O-92A
Not Available

Abstract: No abstract text available
Text: M OT OR O L A SC XSTRS/R F 1SE D I b3fc,7ES4 Qät.llb £ T-a^-ai MPS8097 Unit Vdc Vdc Vdc mAdc " mW m w re Watts mW/°C °C 1 Em itter M A X I M U M R A T IN G S Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Total Device Dissipation @ Ta = 25°C Derate above 25*C Total Device Dissipation @ T q ~ 25°C Derate above 25'C Operating and Storage Junction Temperature Range T H E R M A L C H A R A C T E R IS T IC S Characteristic


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PDF MPS8097
2n4494

Abstract: 2N4495 MPS3711 MPS3709 MPS3710 MPS3708 MPS3707 2N3711 PN2218 2N3709
Text: 50nA 20V 250 1000 100/tA 5V 0.5 V 10mA 4.5pF 50MHz 0.5mA 1.2dB 50mA MPS8097 TO-92 (EBC) 60V 40V 6 V


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PDF T-27-Ã 2N3707 MPS3707 100nA 100/iA 2N3708 MPS3708 2N3709 MPS3709 2n4494 2N4495 MPS3711 MPS3710 2N3711 PN2218
MPS94

Abstract: No abstract text available
Text: MPS6575 MPS6576 MPS8097 N PN N PN N PN N PN N PN TO-92 TO-92 TO-92 TO-92 TO-92 (7?) (72) (72) (72


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PDF MPS5354 MPS5355 MPS5365 MPS5366 MPS6507 PS6511 MPS65I3 PS65I4 PS65I5 MPS6573 MPS94
Not Available

Abstract: No abstract text available
Text: MPS6574 MPS6575 MPS6576 MPS6601 MPS6602 MPS8097 MPS8098 MPS8099 MPSA05 MPSA06 MPSA09 MPSA10 Ïc Max. V(BR


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PDF OSD433Ö MPS3721 MPS3826 MPS3827 MPS5127 MPS5131 MPS5132 MPS5133 MPS5135 MPS5136
2004 - MPS6566

Abstract: MPS6511 MPS6507 MPS5308 MPS5306 MPS5172 MPS3827 MPS3826 MPS3721 MPS3711
Text: 30 50 - 1.0 500 0.60 1000 50 100 - - MPS8097 NPN LOW NOISE


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PDF MPS3710 MPS3711 MPS3721 MPS3826 MPSA14 MPSA18 MPSA20 MPS6566 MPS6511 MPS6507 MPS5308 MPS5306 MPS5172 MPS3827 MPS3826 MPS3721 MPS3711
Not Available

Abstract: No abstract text available
Text: MPS6531 MPS6532 MPS6534 MPS6535 MPS6560 MPS6561 MPS6562 MPS6563 MPS6564 MPS6566 MPS8097 MPS8098 MPS8099


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PDF
2N3904 TO-92 type

Abstract: 2n4401 Die RJE9018 2n3904 c33 2n3904 C37 mps8097 CBO 40V CEO 25V EBO 5V
Text: Transistors/Leaded Type USA/European Specification Models · TO-92 Package/NPN Type For General Purpose Small Signal Amplifiers P art No. P a ckage BV cbo M in. 25V BV ceo Min. 25V BV ebo Min. 5V hFE ! f ° @Vcs Min. Max. @ lc & V ce Max. 100nA 25V 235 470 2.0m A 10V V e rs a ti Max. V sd sat) Max. @ Ic Cob Max. 10pF h Min. 160MHz Typ. @ Ic NF Ic Max. 200m A DIE NO. C22 2N2925 2N5232A MPS8097 MPSA20 MPS8098 PN918 RJE9014C RJE9018G TO-92 (ECB) TO-92 (ECB) TO-92 (EBC) TO


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PDF 100nA 160MHz 2N2925 2N5232A MPS8097 MPSA20 MPS8098 PN918 RJE9014C RJE9018G 2N3904 TO-92 type 2n4401 Die RJE9018 2n3904 c33 2n3904 C37 CBO 40V CEO 25V EBO 5V
70413080

Abstract: 70473180 SAC-187 Motorola 70483180 70483100 70484200 70487478 70484140 SJ-6357 70483180
Text: TO-92 TRANSISTORS 2N3391(A) SPS-953(A, B) MPS-8097 , 2N6520 MPS-A18, 2N6539, SK , -761 70400761 DIF. AMP REPLACE IN PAIRS SPS-953 A, B* SK-3919, MPS-8097 , 2N6520 2N3391(A), MPS-A18, 2N6539 70403919 A=LOW NOISE B=SUPER LOW NOISE SK-3919 SPS-953(A, B), MPS-8097 , 2N6520 2N3391(A) 70403919 2N3391 SEE ABOVE 2N6520 SPS-953(A, B), SK3919, MPS-8097 2N3391(A


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PDF 2N3391 SPS-953 MPS-8097, 2N6520 MPS-A18, 2N6539, SK-3919 2N4249 SPS-690, PN-2907A 70413080 70473180 SAC-187 Motorola 70483180 70483100 70484200 70487478 70484140 SJ-6357 70483180
transistor c37

Abstract: a38 TRANSISTOR 2N3904 A38 2N3904 A31 TRANSISTOR a32 c104 TRANSISTOR 2n3904 c33 2N3904 A32 TRANSISTOR a31 2N3904 b11
Text: MPS3704 MPS3706 MPS3711 MPS4250 MPS4354 MPS5172 MPS6515 MPS6519 MPS6530 MPS6531 MPS6534 MPS6562 MPS8097


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PDF OT-23) OT-323) OT-89) 2N2925 2N3703 2N3704 2N3706 2N3711 2N3860 2N3903 transistor c37 a38 TRANSISTOR 2N3904 A38 2N3904 A31 TRANSISTOR a32 c104 TRANSISTOR 2n3904 c33 2N3904 A32 TRANSISTOR a31 2N3904 b11
MMST5088

Abstract: T7208 2n2925 mpsa18 "Die No." t1130 transistor SST 250
Text: MMST6838 MMSTA20 2N2925 2N3711 MPS3711 2N3860 2N5088 2N5172 MPS5172 2N5210 2N5232A MPS8097 MPS-A09 MPS-A18


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PDF 2N3860 2N5232A MPSA20 360mW 375mW MMST5088 T7208 2n2925 mpsa18 "Die No." t1130 transistor SST 250
transistor 2n5088 equivalent

Abstract: No abstract text available
Text: .SAMSUNG SE MI CON DUCTOR INC 1ME D | 7 ^ 4 1 4 2 000731b 5 MPS8097 AMPLIFIER TRANSISTOR · Collector-Emitter Voltage: Vc*o=40V · Collector Dissipation: Pc (max)=625mW NPN EPITAXIAL SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Collector-Base Voltage Collector-Emitter Vbltags Emitter-Base Vbltage Collector Current · Collector Dissipation Junction Temperature Storage Temperature ' Refer to 2N5088 for graphs Symbol VcBO Vceo Vebo lc Pc Tj Tstg Rating 60 40 6 200


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PDF 000731b MPS8097 625mW 2N5088 transistor 2n5088 equivalent
MPS6511

Abstract: semiconductor MPS6511 MPS6507 MPS5306 MPS5172 MPS3827 MPS3826 MPS3721 MPS3711 MPS3710
Text: . MPS6566 NPN AMPUSWITCH EBC 60 45 4.0 100 30 100 400 10 10 0.40 10 3.5 . . . MPS8097 NPN


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PDF MPS3710 MPS3711 MPS3721 MPS3826 MPS3827 MPS5172 MPSA05 MPSA06 MPSA13 MPSA14 MPS6511 semiconductor MPS6511 MPS6507 MPS5306
Not Available

Abstract: No abstract text available
Text: 100 6.0 150 . . 150 . . . MPS8097 MPS8098 MPS8099 MPS8598


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PDF MPS3710 MPS3711 MPS3721 MPSA18 MPSA20
MPS9633

Abstract: MPS9630 MPS6512 to-92a MPS9631 MPS3710 MPS3709 MPS3707 MPS3608 MPS3177
Text: TO-92A 360 100 45 100 300 # 1 5 0.5 10 100 12 - MPS8097 N TO-92A 350 200 40 250 700 0.1 5 — 250 4


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PDF MPS3608 O-92A MPS3707 MPS3708 MPS3709 MPS3710 MPS9633 MPS9630 MPS6512 to-92a MPS9631 MPS3177
MPS5308

Abstract: CRB 1.0 m MPSA18 MPS6507 MPS5306 MPS5172 MPS3827 MPS3826 MPS3721 MPS3711
Text: 40 4.0 100 30 50 - 1.0 500 0.60 1000 50 100 - - MPS8097


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PDF MPS3710 MPS3711 MPS3721 MPS3826 MPSA14 MPSA18 MPSA20 MPS5308 CRB 1.0 m MPSA18 MPS6507 MPS5306 MPS5172 MPS3827 MPS3826 MPS3721 MPS3711
gk 106

Abstract: BCHL MICRO ELECTRONICS ltd transistor transistor TO-106 422 MPS6566 transistor
Text: MPS6521 MPS6522 MP96523 MPS6565 MPS6566 MPS6571 MPS6573 MPS6574 MPS6575 MPS6576 MPS8097 MPS8098 MPS8598


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PDF bGT17ñ 0Q0107M O-92A gk 106 BCHL MICRO ELECTRONICS ltd transistor transistor TO-106 422 MPS6566 transistor
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