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Avnet, Inc.
MPS6516 - Bulk (Alt: MPS6516) MPS6516 ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Avnet MPS6516 Bulk 0 1 Weeks 1 - - - - - More Info
Motorola Semiconductor Products
MPS6516 MPS6516 ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Bristol Electronics MPS6516 370 20 - - $0.1313 $0.1313 $0.1313 More Info
Motorola Semiconductor Products
MPS6516-18 MPS6516-18 ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Bristol Electronics MPS6516-18 4,000 - - - - - More Info

MPS6516 datasheet (29)

Part ECAD Model Manufacturer Description Type PDF
MPS6516 MPS6516 ECAD Model Continental Device India Semiconductor Device Data Book 1996 Scan PDF
MPS6516 MPS6516 ECAD Model Crimson Semiconductor Transistor Selection Guide Scan PDF
MPS6516 MPS6516 ECAD Model Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan PDF
MPS6516 MPS6516 ECAD Model General Electric Semiconductor Data Handbook 1977 Scan PDF
MPS6516 MPS6516 ECAD Model Micro Electronics Semiconductor Device Data Book Scan PDF
MPS6516 MPS6516 ECAD Model Micro Electronics PNP SILICON PLANAR EPITAXIAL TRANSISTORS Scan PDF
MPS6516 MPS6516 ECAD Model Motorola Motorola Semiconductor Datasheet Library Scan PDF
MPS6516 MPS6516 ECAD Model Motorola Semiconductor Data Library Volume 3 1974 Scan PDF
MPS6516 MPS6516 ECAD Model Motorola Semiconductor Data Library Volume 3 1974 Scan PDF
MPS6516 MPS6516 ECAD Model Motorola PNP amplifier transistor. Scan PDF
MPS6516 MPS6516 ECAD Model Others Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan PDF
MPS6516 MPS6516 ECAD Model Others Basic Transistor and Cross Reference Specification Scan PDF
MPS6516 MPS6516 ECAD Model Others Shortform Transistor PDF Datasheet Scan PDF
MPS6516 MPS6516 ECAD Model Others Shortform Transistor PDF Datasheet Scan PDF
MPS6516 MPS6516 ECAD Model Others Catalog Scans - Shortform Datasheet Scan PDF
MPS6516 MPS6516 ECAD Model Others Cross Reference Datasheet Scan PDF
MPS6516 MPS6516 ECAD Model Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
MPS6516 MPS6516 ECAD Model Others Semiconductor Master Cross Reference Guide Scan PDF
MPS6516 MPS6516 ECAD Model Others Shortform Transistor Datasheet Guide Scan PDF
MPS6516 MPS6516 ECAD Model Others Shortform Data and Cross References (Misc Datasheets) Scan PDF

MPS6516 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
MPS6515

Abstract: MPS6512 MPS6516 MPS6517 MPS6518 mps*512 MPS6513 MPS6514 MPS6519
Text: MPS6512 thru MPS6515/ MPS6516 thru MPS6519 (continued) MPS6512 thru MPS6515 (NPN) ELECTRICAL , 10 Hz and 10 kHz) NF - 2.0 - dB * Pulse Test: Pulse Width £ 30 jjb, Duty Cycle £ 2.0%. MPS6516 , mAdc, I = 0) MPS6516 thru MPS6518 MPS6519 BVCEO 40 25 - - Vdc Emitter-Base Breakdown Voltage (IE = 10 fjAdc, Ic > 0) bvebo 4.0 - - Vdc Collector Cutoff Current (VCB • 30 Vdc, IE « 0) MPS6516 Uu-u MPS6518 (VCB = 20 Vdc, IE > 0) MPS6519 (VCB - 30 Vdc, 1E = 0, Ta - 60°C) MPS6516 thru MPS6518 (VCB = 20


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PDF MPS6512 MPS6515/MPS6516 MPS6519 MPS6515 MPS6512, MPS6513 MPS6514, MPS6515 30-Vdc, MPS6516 MPS6517 MPS6518 mps*512 MPS6514 MPS6519
2004 - transistor mps6515

Abstract: MPS6515 MPS6519 complementary npn-pnp MPS6512 semiconductor mps6516 MPS6518 equivalent MPS6518 MPS6517 MPS6513
Text: DATA SHEET NPN MPS6512 MPS6513 MPS6514 MPS6515 PNP MPS6516 MPS6517 MPS6518 MPS6519 , (NPN) and MPS6516 Series (PNP) types are molded Epoxy Silicon Small Signal Transistors designed for , MPS6514 MPS6515 40 MPS6516 MPS6517 MPS6518 40 MPS6519 25 UNITS V 30 25 40 25 , =100mA MPS6516 MPS6517 MPS6518 MIN MAX 50 VCB=30V VCB=20V BVCEO BVEBO MPS6512 MPS6513 MIN MAX , MPS6512 MPS6516 MIN MAX 50 100 MPS6513 MPS6517 MIN MAX 90 180 MPS6514 MPS6518 MIN MAX 150


Original
PDF MPS6512 MPS6513 MPS6514 MPS6515 MPS6516 MPS6517 MPS6518 MPS6519 MPS6512 MPS6516 transistor mps6515 MPS6515 MPS6519 complementary npn-pnp semiconductor mps6516 MPS6518 equivalent MPS6518 MPS6517 MPS6513
MPS6516

Abstract: MPS6519 mps6518
Text:  IMI U ■*■■V VWIV PNP SILICON PLANAR EPITAXIAL TRANSISTORS MPS6516 thru' MPS6519 , =25°C Operating Junction & Storage Temperature VCEO VCBO VEBO IC ptot "H/ J«tfl ebc MPS6516 /7/8 40V 40V 4V , =25°C unless otherwise noted) 4 parameter symbol min typ max unit test conditions Collector-Emitter mps6516 /7 , t ie=10na ic=0 Collector Cutoff mps6516 /7/8 Current mps6519 icbo 50 50 nA nA vcb=30v ie=0 vcb=20v t ie=0 Collector Cutoff mps6516 /7/8 Current mps6519 icbo 1 1 fxA HA ta=60°c« vcb=30v l£=0 vcb


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PDF MPS6516 MPS6519 T0-92A MPS6516/7/8 100mA 350mW MPS6519 100mA 350mW mps6516/7/8 mps6518
Not Available

Abstract: No abstract text available
Text: MPS 6516 thru’ MPS 6519 PNP SILICON PLANAR EPITAXIAL TRANSISTORS CASE T0-92A MPS6516 thru , MPS6519 MPS6516 /7/8 TÌ, J s t g unless otherwise noted) SYMBOL - Collector-Èmitter MPS6516 /7/8 b v c e o Breakdown Voltage MPSÓ519 Emitter-Base Breakdown Voltage 40V ; 25V 40V â , Vc b =30V VCB=20V IE=0 lE=0 Collector Cutoff Current MPS6516 /7/8 ICBO MPS6519 1 1 , (SAT) D.C. Current Gain MPS6516 MPS6517 MPS6518 MPS6519 Hf e D.C. Current Gain


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PDF T0-92A MPS6516 MPS6519 MPS6519 MPS6516/7/8 MPS6516/7/8 100mA Boxfe477, 100kHz 10kHz
MPS6519 motorola

Abstract: mps6515 mps6512 mps6518 mps6513 TRANSISTOR MPS6514 MPS6517 MPS6519 transistor mps6515
Text: - NPN Collector-Emitter Voltage MPS6512, MPS6513 MPS6514, MPS6515 MPS6516 thru MPS6518 MPS6519 Collector-Base Voltage MPS6512 thru MPS6515 MPS6516 thru MPS6518 MPS6519 Emitter-Base Voltage Collector Current , MPS6512 thru MPS6515 PNP MPS6516 thru MPS6519 C A SE 29-04, STYLE 1 TO-92 (TO-226AA) VCBO 40 - - , MPS6514, MPS6515 MPS6516 thru MPS6518 MPS6519 dE - 10 /¿Ade, Ic = 0) He = 10 fiAdc, Ic - 0) V(BR)EBO ICBO , 2.0 mAdc, V c e = 10 Vdc) Vdc /¿Ade MPS6516 thru MPS6518 MPS6519 - - - 0.05 0.05


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PDF t3b72SM MPS6512, MPS6513 MPS6514, MPS6515 MPS6516 MPS6518 MPS6519 MPS6512 MPS6519 motorola mps6513 TRANSISTOR MPS6514 MPS6517 transistor mps6515
MPSA56

Abstract: MPSA20 MPSA14 MPSA13 MPSA12 MPSA06 MPSA05 GES5821 GES5820 GES5819
Text: MPS6512 -MPS651SI S E3 e MPS6516-MPS6519 I These Silicon Planar Epitaxial Passivated , MPS6512-MPS6515 MPS6516-MPS6519 MPS6512 Thru MPS6515 (NPN) Static Characteristics (continued) Forward Current , dB 1366 MPS6512-MPS6515 MPS6516-MPS6519 MPS6515 Thru MPS6519 (PNP) Static Characteristics , 100 350 MPS6516 PNP 40 50 100 2 ■10 .5 50 ¡¡¡Ijj 225 2.5 100 3S0 MPS6517 PNP 40 90 18Q .2 - . , MPS3702 MPS6512 30 50-100 2mA, 10 0.5 bOmA, 5mA MPS6516 IMPS6513 30 90-180 2mA, 10 .Ob 50mA. 5mA


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PDF GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 MPSA20MPS6516 MPS6517 MPSA56 MPSA20
MPS6516

Abstract: MPS6519 MPS6517 MPS6518 E3060
Text: MPS 6516 thru1 MPS 6519 PNP SILICON PLANAR EPITAXIAL TRANSISTORS MPS6516 thru1 MPS6519 are PNP , Storage Temperature MPS6516 /7/8 MPS6519 VCEO VCBO VEBO IC ptot r,-"- -■*«. . • :.f TîrJstg is , Collector-Emitter MPS6516 /7/8 Breakdown Voltage MPS6519 bvceo 40 25 V v IC=0.5mA lb=0 Emitter-Base Breakdown Voltage bvebo 4 V t IE=10jiA IC=0 Collector Cutoff MPS6516 /7/8 Current MPS6519 ICBO 50 50 nA nA VCb=30V IE=0 VCB=20V IE=0 Collector Cutoff MPS6516 /7/8 Current MPS6519 ICBO 1 1 ha ua TA=60°Cr VCB=30V l£=0 Vcb=20V ie


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PDF MPS6516 MPS6519 T0-92A MPS6516/7/8 100mA 350mW MPS6517 MPS6518 E3060
MPS6544

Abstract: MPS-6544 MPS6516 MPS6515 MPS6513 MPS6519 MPS6512 transistor mps6515 MPS6517 MPS6518
Text: , MPS6513 MPS6514, MPS6515 MPS6516 thru MPS6518 MPS6519 VCEO 30 25 40 25 Vdc Collector-Base Voltage MPS6512 thru MPS6515 MPS6516 thru MPS6518 MPS6519 VCBO 40 40 25 Vdc Emitter-Base Voltage VEBO 4.0 4.0 , Thermal Resistance, Junction to Ambient R«ua 200 °c/w NPN MPS6512 thru MPS6515 PNP MPS6516 thru , , MPS6513 30 — — MPS6514, MPS6515 25 — — dc = 0.5 mAdc, Ib - 0) MPS6516 thru MPS6518 40 _ _ , €” — 0.05 (VCB = 30 Vdc, lE = 0) MPS6516 thru MPS6518 — — 0.05 (VCB = 20 Vdc, lE = 0


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PDF -p-21-21 MPS6512, MPS6513 MPS6514, MPS6515 MPS6516 MPS6518 MPS6519 MPS6512 MPS6544 MPS-6544 transistor mps6515 MPS6517
MPS6515

Abstract: MPS6519 MPS6512 MPS6516 MPS6513 MPS6518 transistor mps6515 MPS6514
Text: MPS6512 thru MPS6515 NPN (SILICON) MPS6516 «H,» MPS6519 PNP isiucon) SILICON ANNULAR TRANSISTORS . . . designed for general-purpose amplifier applications and for complementary circuitry. • Narrow DC Current Gain Ranges - 2:1 Complementary Types for Each Gain Range • Low Noise Figure - 2.0 , , MPS6515 MPS6516 thru MPS6518 MPS6519 VcEO 30 25 40 25 Vdc Collector-Base Voltage MPS6512 thru MPS6515 MPS6516 thru MPS6518 MPS6519 VCB 40 40 25 Vdc Emitter-Base Voltage VEB 4.0 4.0 Vdc Collector Current â


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PDF MPS6512 MPS6515 MPS6516 MPS6519 MPS6512, MPS6513 MPS6514, MPS6516 MPS6518 transistor mps6515 MPS6514
D38Y1-3

Abstract: MPSA20 MPSA14 MPSA13 MPSA12 MPSA06 MPSA05 GES5821 GES5820 GES5819
Text: 100 350 MPS6516 PNP 40 50 100 2 ■10 .5 50 ¡¡¡Ijj 225 2.5 100 3S0 MPS6517 PNP 40 90 18Q .2 - . , MPS3702 MPS6512 30 50-100 2mA, 10 0.5 bOmA, 5mA MPS6516 IMPS6513 30 90-180 2mA, 10 .Ob 50mA. 5mA , , 5mA MPS6519 MPS6516 40 50-100 2mA, 10 0.5 bOmA, bniA MPS6512 MPS651 7 40 90-180 2mA, 10 0.5 50mA


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PDF GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 MPSA2034 MPS6532 D38Y1-3 MPSA20
MPSA56

Abstract: MPSA20 MPSA14 MPSA13 MPSA12 MPSA06 MPSA05 GES5821 GES5820 GES5819
Text: 100 350 MPS6516 PNP 40 50 100 2 ■10 .5 50 ¡¡¡Ijj 225 2.5 100 3S0 MPS6517 PNP 40 90 18Q .2 - . , MPS3702 MPS6512 30 50-100 2mA, 10 0.5 bOmA, 5mA MPS6516 IMPS6513 30 90-180 2mA, 10 .Ob 50mA. 5mA , , 5mA MPS6519 MPS6516 40 50-100 2mA, 10 0.5 bOmA, bniA MPS6512 MPS651 7 40 90-180 2mA, 10 0.5 50mA


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PDF GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 MPSA206531, MPS6532 MPSA56 MPSA20
MPS6566

Abstract: MPSA20 MPSA14 MPSA13 MPSA12 MPSA06 MPSA05 GES5821 GES5820 MPSA56
Text: 100 350 MPS6516 PNP 40 50 100 2 ■10 .5 50 ¡¡¡Ijj 225 2.5 100 3S0 MPS6517 PNP 40 90 18Q .2 - . , MPS3702 MPS6512 30 50-100 2mA, 10 0.5 bOmA, 5mA MPS6516 IMPS6513 30 90-180 2mA, 10 .Ob 50mA. 5mA , , 5mA MPS6519 MPS6516 40 50-100 2mA, 10 0.5 bOmA, bniA MPS6512 MPS651 7 40 90-180 2mA, 10 0.5 50mA


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PDF GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 MPSA20VES MPS6566 MPSA20 MPSA56
MPSA56

Abstract: MPSA20 MPSA14 MPSA13 MPSA12 MPSA06 MPSA05 GES5821 GES5820 GES5819
Text: 100 350 MPS6516 PNP 40 50 100 2 ■10 .5 50 ¡¡¡Ijj 225 2.5 100 3S0 MPS6517 PNP 40 90 18Q .2 - . , MPS3702 MPS6512 30 50-100 2mA, 10 0.5 bOmA, 5mA MPS6516 IMPS6513 30 90-180 2mA, 10 .Ob 50mA. 5mA , , 5mA MPS6519 MPS6516 40 50-100 2mA, 10 0.5 bOmA, bniA MPS6512 MPS651 7 40 90-180 2mA, 10 0.5 50mA


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PDF GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 MPSA20 MPSA56 MPSA20
D39J4

Abstract: MPSA55 MPSA20 MPSA14 MPSA13 MPSA12 MPSA06 MPSA05 GES5821 GES5820
Text: 100 350 MPS6516 PNP 40 50 100 2 ■10 .5 50 ¡¡¡Ijj 225 2.5 100 3S0 MPS6517 PNP 40 90 18Q .2 - . , MPS3702 MPS6512 30 50-100 2mA, 10 0.5 bOmA, 5mA MPS6516 IMPS6513 30 90-180 2mA, 10 .Ob 50mA. 5mA , , 5mA MPS6519 MPS6516 40 50-100 2mA, 10 0.5 bOmA, bniA MPS6512 MPS651 7 40 90-180 2mA, 10 0.5 50mA


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PDF GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 MPSA20S6535 100mA) D39J4 MPSA55 MPSA20
2N5227

Abstract: 2N3905 MOTOROLA MPS3906 mmt3905 2n995 mm3906 MPS5139 SILICON DICE motorola
Text: MMCM3905 MMCM3906 MMT75 MMT3905 MMT3906 MPS3905 MPS3906 MPS5139 MPS6516 MPS6517 METALLIZATION - Top


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PDF DMB155 2C3906 2N995 2N3250 2N3251 2N3905 2N3906 2N4125 2N4126 2N5227 2N3905 MOTOROLA MPS3906 mmt3905 mm3906 MPS5139 SILICON DICE motorola
MPS51

Abstract: MPS6517 MPS6516 MPS6514 MPS6512 MPS3706 MPS3705 MPS3704 MPS3703 MPS3702
Text: MPS3702 MPS6512 30 50-100 2mA, 10 0.5 bOmA, 5mA MPS6516 IMPS6513 30 90-180 2mA, 10 .Ob 50mA. 5mA , , 5mA MPS6519 MPS6516 40 50-100 2mA, 10 0.5 bOmA, bniA MPS6512 MPS651 7 40 90-180 2mA, 10 0.5 50mA


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PDF 100mA, MPSA55 MPS3702 MPS3704 MPS51 MPS6517 MPS6516 MPS6514 MPS6512 MPS3706 MPS3705 MPS3704 MPS3703
mpsa65

Abstract: MPSA55 MPSA20 MPSA14 MPSA13 MPSA12 MPSA06 MPSA05 GES5821 GES5820
Text: 100 350 MPS6516 PNP 40 50 100 2 ■10 .5 50 ¡¡¡Ijj 225 2.5 100 3S0 MPS6517 PNP 40 90 18Q .2 - . , MPS3702 MPS6512 30 50-100 2mA, 10 0.5 bOmA, 5mA MPS6516 IMPS6513 30 90-180 2mA, 10 .Ob 50mA. 5mA , , 5mA MPS6519 MPS6516 40 50-100 2mA, 10 0.5 bOmA, bniA MPS6512 MPS651 7 40 90-180 2mA, 10 0.5 50mA


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PDF GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 MPSA200 MPS3702, mpsa65 MPSA55 MPSA20
mps 06

Abstract: MPS6517 MPS6516 MPS6514 MPS6512 MPS3706 MPS3705 MPS3704 MPS3703 2N3877
Text: MPS3702 MPS6512 30 50-100 2mA, 10 0.5 bOmA, 5mA MPS6516 IMPS6513 30 90-180 2mA, 10 .Ob 50mA. 5mA , , 5mA MPS6519 MPS6516 40 50-100 2mA, 10 0.5 bOmA, bniA MPS6512 MPS651 7 40 90-180 2mA, 10 0.5 50mA


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PDF 100mA, MPSA55 MPS3702 MPS3704 mps 06 MPS6517 MPS6516 MPS6514 MPS6512 MPS3706 MPS3705 MPS3704 MPS3703 2N3877
Not Available

Abstract: No abstract text available
Text: MOTOROLA TECHNICAL DATA SEM IC O N D U C T O R MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - C ontin uo us Total Device D issipation @ T/^ = 25°C Derate above 25°C Total Device Dissipation @ T q = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol V C EO v CBO v E BO 'C PD Pd T j, Tgtg MPS6516 60 60 MPS6517 80 80 Unit Vdc Vdc Vdc m A dc Watt mW/°C W atts mW/°C °C MPS6716 MPS6717 C


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PDF MPS6516 MPS6517 MPS6716 MPS6717 O-226AE) PS6716
AL102 ATES

Abstract: 2N2222A mps KR206 AD149 SFT353 TIS88 2N4265 2N2431 TIS58 2SC984
Text: . BC178VI, MPS6516. BSY62-63, 2N4264. 2N4123. BSX45-6/10. MPS6530. MPSA10, 2N2221A. 2N2221A. BFY80, BSX46 , . 2N1302-1306. 2N1306-1308. 2N1307. 2N1997. ACY24, ASY48. 2N2944-2945-4125. MPS404A, 2N2944-2945. MPS6516


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PDF Trans-611 DT1521 2N2270 BC107-182KS ESC182KAS ESC182KBS ESC1Q8-183KS EiC183KBS 8C183KCS BC109-184KS AL102 ATES 2N2222A mps KR206 AD149 SFT353 TIS88 2N4265 2N2431 TIS58 2SC984
MPS6516

Abstract: MPS6517 MPS6716 MPS6717 MPSW05
Text: MOTOROLA SC XSTRS/R F MAXIMUM RATINGS THERMAL CHARACTERISTICS lEE O I t3b7554 GOflblll t> Rating Symbol MPS6516 MPS6517 Unit Collector-Emitter Voltage VCEO 60 80 Vdc Collector-Base Voltage VCBO 60 80 Vdc Emitter-Base Voltage Vebo 6.0 Vdc Collector Current — Continuous ic 500 mAdc Total Device Dissipation @ T/^ =■25°C Derate above 25°C pd 1.0 8.0 Watt mWfC Total Device Dissipation @ Tc = 25°C Derate above 25°C pd 2.5 20 Watts mW/°C Operating and Storage Junction Temperature


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PDF t3b7554 MPS6516 MPS6517 MPS6716 MPS6717 O-226AE) MPS6716 MPS6717 MPSW05
MPS4355

Abstract: MPS6534 MPS6533 MPS6523 MPS6519 MPS6518 MPS6517 MPS6516 MPS6515 MPS4356
Text: -92 150 100 10 MPS6516 40 40 4 0.625 0.1 0.05 30 50 100 2 10 0.5 50 4 TO-92 30


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PDF MPS4355 MPS4356 MPS8599 MPSA55 MPSA56 MPSA63 MPSA70 MPSA92 MPS6534 MPS6533 MPS6523 MPS6519 MPS6518 MPS6517 MPS6516 MPS6515
N4030

Abstract: 2N2906 to92 2pa733 2N4033 MPS3640 2PA1015 2N2907 TO-92 2PA1015L
Text: * MPS3640 MPS3702 MPS3703 MPS3906 MPS6516 MPS6517 MPS6518 MPS6519 MPS6522 MPS6523 MPS6533 MPS6534 MPS8598


OCR Scan
PDF 2N2904A 2N2905 2N2905A 2N2906 2N2906A 2N2907 2N2907A 2N3906 N4030 2N4031 2N2906 to92 2pa733 2N4033 MPS3640 2PA1015 2N2907 TO-92 2PA1015L
Not Available

Abstract: No abstract text available
Text: TO-92 Plastic Package Transistors (PNP) Maximum Ratings Type No. MPS4355 MPS4356 ^CBO ^CEO ^EBO (V) Min (V) Min (V) Min 60 60 5 80 80 5 P 0 'CES (W) @Tc=25"c (MA) ® (V) (pA) Max Max 0.625 0.5 0.625 0.5 MPS6515 40 25 4 0.625 0.1 MPS6516 40 .40 4 0.625 0.1 MPS6517 40 40 4 0.625 MPS6518 40 40 MPS6519 40 MPS6523 MPS6533 MPS6534 0.05 0.05 50 Min 75 75


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PDF MPS4355 MPS4356 MPS6515 MPS6516 MPS6517 MPS6518 MPS6519 MPS6523 MPS6533 MPS6534
MPS8093

Abstract: mps404
Text: ALLEGRO MICROSYSTEMS INC 8514019 SPRAGUE, 13 D GS0M33Ô 00035^7 7 ALGR 93D 03597 2 ) S E M I C O N D S / ICS PLASTIC-CASE BIPOLAR TRANSISTORS T'Ql'Qb ' PNP Transistors `MPS' Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C ^CBO DC Current Gain ^CE(sat) h NF1 (dB) _ _ _ _ _ _ _ Device Type MPS404 MPS404A MPS3638 MPS3638A MPS3702 MPS3703 MPS4248 MPS4249 MPS4250 MPS4250A MPS4354 MPS4355 MPS4356 MPS5138 MPS5139 MPS6516 MPS6517 MPS6518 MPS6519 MPS6522


OCR Scan
PDF GS0M33Ô MPS404 MPS404A MPS3638 MPS3638A MPS3702 MPS3703 MPS4248 MPS4249 MPS4250 MPS8093
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