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Avnet, Inc.
MPS3906126 - Bulk (Alt: MPS3906126) MPS3906126 ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Avnet (2) MPS3906126 Bulk 0 1 Weeks 6,250 - - - - $0.05195 More Info
MPS3906126 Bulk 0 1 Weeks 6,250 - - - - $0.05195 More Info
NXP Semiconductors
MPS3906,126 Now Nexperia MPS3906 - Small Signal Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-92 MPS3906,126 ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Rochester Electronics MPS3906,126 4,000 1 $0.06 $0.06 $0.06 $0.05 $0.05 More Info
Philips Semiconductors
MPS3906 MPS3906 ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
America II Electronics MPS3906 21,493 - - - - - More Info
NXP Semiconductors
MPS3906 MPS3906 ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
America II Electronics MPS3906 18,000 - - - - - More Info

MPS3906 datasheet (22)

Part ECAD Model Manufacturer Description Type PDF
MPS3906 MPS3906 ECAD Model Motorola GENERAL PURPOSE TRANSISTOR Original PDF
MPS3906 MPS3906 ECAD Model NXP Semiconductors PNP switching transistor Original PDF
MPS3906 MPS3906 ECAD Model On Semiconductor General Purpose Transistor Original PDF
MPS3906 MPS3906 ECAD Model Philips Semiconductors Small-signal Transistors Original PDF
MPS3906 MPS3906 ECAD Model Philips Semiconductors PNP switching transistor Original PDF
MPS3906 MPS3906 ECAD Model Siemens Cross Reference Guide 1998 Original PDF
MPS3906 MPS3906 ECAD Model Others Shortform Transistor PDF Datasheet Scan PDF
MPS3906 MPS3906 ECAD Model Others Shortform Transistor PDF Datasheet Scan PDF
MPS3906 MPS3906 ECAD Model Others Semiconductor Reference and Application Handbook 1978 Scan PDF
MPS3906 MPS3906 ECAD Model Others Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan PDF
MPS3906 MPS3906 ECAD Model Others Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan PDF
MPS3906 MPS3906 ECAD Model National Semiconductor Shortform National Semiconductor Datasheet Scan PDF
MPS3906 MPS3906 ECAD Model National Semiconductor PNP General Purpose Transistors Scan PDF
MPS3906 MPS3906 ECAD Model National Semiconductor General Purpose Amplifiers and Switches Scan PDF
MPS3906 MPS3906 ECAD Model National Semiconductor PNP Transistor Scan PDF
MPS3906 MPS3906 ECAD Model Philips Semiconductors Silicon Planar Epitaxial Transistor Scan PDF
MPS3906,126 MPS3906,126 ECAD Model Philips Semiconductors Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS PNP SW HS 100MA 40V TO92 Original PDF
MPS3906AMO MPS3906AMO ECAD Model Philips Semiconductors PNP switching transistor Original PDF
MPS3906AMO MPS3906AMO ECAD Model Others Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan PDF
MPS3906-D MPS3906-D ECAD Model On Semiconductor General Purpose Transistor PNP Silicon Original PDF

MPS3906 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2001 - MPS3906

Abstract: No abstract text available
Text: ON Semiconductort MPS3906 General Purpose Transistor PNP Silicon MAXIMUM RATINGS Rating , Order Number: MPS3906 /D MPS3906 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted , 1. Pulse Test: Pulse Width = 300 ms; Duty Cycle = 2.0%. http://onsemi.com 2 MPS3906 TYPICAL , . Wideband http://onsemi.com 3 MPS3906 TYPICAL STATIC CHARACTERISTICS h FE, DC CURRENT GAIN , 100 MPS3906 TYPICAL DYNAMIC CHARACTERISTICS 500 300 200 200 100 70 50 30 tr 20


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PDF MPS3906 r14525 MPS3906/D MPS3906
2001 - MPS3906

Abstract: No abstract text available
Text: 1.5 12 -55 to +150 Unit Vdc Vdc Vdc mAdc mW mW/°C Watts mW/°C °C MPS3906 1 2 3 CASE 29-04 , Components Industries, LLC, 2001 1214 March, 2001 - Rev. 2 Publication Order Number: MPS3906 /D MPS3906 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol , 1215 MPS3906 TYPICAL NOISE CHARACTERISTICS (VCE = - 5.0 Vdc, TA = 25°C) 10 7.0 en, NOISE VOLTAGE , ://onsemi.com 1216 MPS3906 TYPICAL STATIC CHARACTERISTICS 400 TJ = 125°C 25°C h FE, DC CURRENT GAIN


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PDF MPS3906 O-226AA) AN-569. MPS3906
2004 - MPS3906

Abstract: MPS3904 SC-43A Transistor mps3906 MAM280
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 MPS3906 PNP switching , Product specification PNP switching transistor MPS3906 FEATURES PINNING · Low current (max , PACKAGE TYPE NUMBER NAME MPS3906 SC-43A DESCRIPTION VERSION plastic single-ended leaded , PNP switching transistor MPS3906 THERMAL CHARACTERISTICS SYMBOL Rth(j-a) PARAMETER , Philips Semiconductors Product specification PNP switching transistor MPS3906 VBB VCC RB


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PDF M3D186 MPS3906 MPS3904. MAM280 SCA76 R75/04/pp7 MPS3906 MPS3904 SC-43A Transistor mps3906 MAM280
1999 - BP317

Abstract: MPS3904 MPS3906
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 MPS3906 PNP switching , Product specification PNP switching transistor MPS3906 FEATURES PINNING · Low current (max , Philips Semiconductors Product specification PNP switching transistor MPS3906 THERMAL , transistor MPS3906 VBB handbook, full pagewidth RB VCC RC Vo (probe) oscilloscope 450 , switching transistor MPS3906 PACKAGE OUTLINE Plastic single-ended leaded (through hole) package; 3


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PDF M3D186 MPS3906 MPS3904. MAM280 SCA63 115002/00/03/pp8 BP317 MPS3904 MPS3906
MPS3906

Abstract: No abstract text available
Text: MPS3906 3 1 EMITTER M AXIM UM RATINGS Rating C ollector-E m itter Voltage C ollector-B ase Voltage , 2-566 Motorola Small-Signal Transistors, FETs and Diodes Device Data MPS3906 ELECTRICAL CHAR AC , Small-Signal Transistors, FETs and Diodes Device Data X © I - Iimhos dB ns ns ns ns 2-567 MPS3906 , MPS3906 TYPICAL STATIC CHARACTERISTICS IC, COLLECTOR CURRENT (mA) Figure 6. DC Current Gain VCE , 2-569 MPS3906 TYPICAL DYNAMIC CHARACTERISTICS t, T IM E (ns) 1.0 2.0 3.0 5.0 7.0 10


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PDF MPS3906 MPS3906
BC517 "cross reference"

Abstract: 2n5401 2n3904 bc557 cross reference BC546 "cross reference" 2N5088 Cross Reference PMBT2369 2n2925 cross reference BC337 BC547 bc548b cross reference MPSa06 equivalent
Text: 2SC4081 2PC4081Q 2N5087 MPS3906 2SC4097 2PC4081Q 2N5087 MPS3906 2SC4098 BC847AW , MPS3906 MPS3646 BF370 MPSA70 MPS3906 MPS3904 MPS3904 MPSA75 MPSA64 MPS3906 MPS3906 MPSA92 MPSA92 MPS4124 2N3904 MPSA93 MPSA92 MPS4126 2N3904 MPSH81


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PDF 2N2925 ED1402D 2SA1759 PXTA92 2N3903 2N3904 2SA1774 2PA1774Q BC517 "cross reference" 2n5401 2n3904 bc557 cross reference BC546 "cross reference" 2N5088 Cross Reference PMBT2369 2n2925 cross reference BC337 BC547 bc548b cross reference MPSa06 equivalent
2006 - Not Available

Abstract: No abstract text available
Text: MPS3906 General Purpose Transistor High−Performance Silicon−Gate CMOS MAXIMUM RATINGS , : MPS3906 /D MPS3906 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued , : Pulse Width = 300 ms; Duty Cycle = 2.0%. http://onsemi.com 2 MPS3906 TYPICAL NOISE , MPS3906 TYPICAL STATIC CHARACTERISTICS h FE, DC CURRENT GAIN 400 TJ = 125°C 25°C 200 â , ://onsemi.com 4 50 100 MPS3906 TYPICAL DYNAMIC CHARACTERISTICS 1000 700 500 500 VCC = 3.0 V


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PDF MPS3906 MPS3906/D
1996 - MPS3906

Abstract: Transistor mps3906
Text: MOTOROLA Order this document by MPS3906 /D SEMICONDUCTOR TECHNICAL DATA General Purpose Transistor MPS3906 PNP Silicon COLLECTOR 3 2 BASE 1 EMITTER 1 2 MAXIMUM RATINGS Rating , Transistors, FETs and Diodes Device Data © Motorola, Inc. 1996 1 MPS3906 ELECTRICAL CHARACTERISTICS , Motorola Small­Signal Transistors, FETs and Diodes Device Data MPS3906 TYPICAL NOISE CHARACTERISTICS , Device Data 3 MPS3906 TYPICAL STATIC CHARACTERISTICS h FE, DC CURRENT GAIN 400 TJ = 125


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PDF MPS3906/D MPS3906 226AA) MPS3906/D* MPS3906 Transistor mps3906
1997 - Not Available

Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 MPS3906 PNP switching transistor , handbook, halfpage MPS3906 PINNING PIN 1 2 3 collector base emitter DESCRIPTION 2 3 1 2 3 , MPS3906 MAX. -40 -40 -5 -100 -200 -200 500 +150 150 +150 UNIT V V V mA mA mA mW °C °C °C THERMAL , Semiconductors Product specification PNP switching transistor MPS3906 SYMBOL F noise figure , transistor PACKAGE OUTLINE Plastic single-ended leaded (through hole) package; 3 leads MPS3906 SOT54


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PDF M3D186 MPS3906 MPS3904. MPS3906 MAM280 SCA54 117047/00/02/pp8
MPS3906

Abstract: No abstract text available
Text: ■I bbSBTBl GGET^nb DIO BiAPX N AUER PHILIPS/DISCRETE blE D SILICON PLANAR EPITAXIAL TRANSISTOR MPS3906 PNP transistors in plastic TO-92 envelopes, primarily intended for industrial applications (e.g. Telecom). quick reference data Collector-base voltage (open emitter) Collector-emitter , MPS3906 ■^53131 ÜDE?tlc)7 TS7 «APX N AMER PHILIPS/DISCRETE bTE D RATINGS Limiting values in , – bbSBIBl DDST^TÔ MAPX MPS3906 SWITCHING CHARACTERISTICS Delay time VCC = 3.0 V DC, VBE


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PDF MPS3906 MBB657 MPS3906
Not Available

Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS BITÂ S y i I T MPS3906 PNP switching transistor Product , amplification. 3 collector base emitter MPS3906 DESCRIPTION DESCRIPTION PNP transistor in a plastic TO , from junction to ambient note 1 CONDITIONS MPS3906 VALUE 250 UNIT K/W CHARACTERISTICS T amb , specification PNP switching transistor MPS3906 V BB V CC rb oscilloscope (probe) 450 rc V0 , (through hole) package; 3 leads MPS3906 SOT54 1 I - 0 2.5 I I I I 5 mm I I


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PDF MPS3906 MPS3906 MPS3904. 115002/00/03/pp8
mps3906

Abstract: No abstract text available
Text: amplification. 3 collector base emitter MPS3906 DESCRIPTION DESCRIPTION PNP transistor in a plastic TO , from junction to ambient note 1 CONDITIONS MPS3906 VALUE 250 UNIT K/W CHARACTERISTICS Tamb , iconductors P roduct specification PNP switching transistor MPS3906 V BB V CC r B , single-ended leaded (through hole) package; 3 leads MPS3906 SOT54 0 2.5 I I I I 5 mm I I I I I


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PDF MPS3906 MPS3904. mps3906
PS3906

Abstract: MPS3906 transistor sms
Text: 2-566 MPS3906 ELECTRICAL CHARACTERISTICS (T/\ = 25°C unless otherwise noted) (Continued , Motorola Small-Signal Transistors, FETs and Diodes Device Data MPS3906 TYPICAL NOISE CHARACTERISTICS , Transistors, FETs and Diodes Device Data MPS3906 T Y P IC A L STATIC C H A R A C TE R IS TIC S lC , Transistors, FETs and Diodes Device Data MPS3906 TYPICAL DYNAMIC CHARACTERISTICS 1000 700 500 300 200 t , Small-Signal Transistors, FETs and Diodes Device Data MPS3906 DUTY CYCLE, D = ti/t2 DCURVES APPLY FOR


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PDF PS3906 AN-569. PS3906 MPS3906 transistor sms
MPS3906

Abstract: No abstract text available
Text: collector base emitter MPS3906 DESCRIPTION QUICK REFERENCE DATA SYMBOL VcBO PARAMETER , Absolute Maximum Rating System (IEC 134). SYMBOL VcBO V CEO MPS3906 PARAMETER collector-base voltage , Semiconductors Product specification PNP switching transistor MPS3906 SYMBOL F noise figure


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PDF MPS3904. MPS3906 -10mA; MPS3906
1996 - MPS3905

Abstract: 2N5086 2N5087 2n5087 motorola MPS3906
Text: °C 25°C 200 ­ 55°C 100 80 MPS3906 VCE = 1.0 V VCE = 10 V 60 40 0.003 0.005 0.01 , 10 20 30 50 70 100 100 1.0 TA = 25°C MPS3906 IC, COLLECTOR CURRENT (mA) VCE , Figure 14. Capacitance 200 10 MPS3906 hfe 200 @ IC = ­1.0 mA 7.0 5.0 3.0 2.0 VCE = ­10 , /IB = 10 IB1 = IB2 TJ = 25°C 100 70 50 30 20 VCE = 10 Vdc f = 1.0 kHz TA = 25°C MPS3906


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PDF 2N5086/D 2N5086 2N5087* 2N5086/D* MPS3905 2N5086 2N5087 2n5087 motorola MPS3906
2010 - 2SA1005K

Abstract: 2N5383 2N3644 BC512 LOW-POWER SILICON PNP KT310 BC204B 2N601 BC251 2SA1005L
Text: RF LOW-POWER SILICON PNP Item Number Part Number Manufacturer V(BR)CEO (V) fT (Hz) hFE Ic Max (A) Cobo Max (F) ICBO Max (A) tr Max (8) tf Max (8) PD Max (W) Toper Max eC) Package Style V(BR)CEO MPS3906 MPS3906 MPS3906 NS3906 NTM3906 NTM3906 PET3906 PXT3906 PXT3906 TP5383 YTS3906 2N3906 2N5383 2N5366 2N5366 2N5366 0402 0402 BFY64 2N5367 >= 30 V, (Cont'd) 40 40 40 40 40 40 40 40 40 40 40 40 40 40 40 40 40 40 40 40 40 40 40 40 40 40 40 40 40 40 40 40 40 40


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PDF MPS3906 NS3906 NTM3906 PET3906 PXT3906 TP5383 2SA1005K 2N5383 2N3644 BC512 LOW-POWER SILICON PNP KT310 BC204B 2N601 BC251 2SA1005L
Not Available

Abstract: No abstract text available
Text: ■I bbSBTBl DIO ■APX N AMER PHILIPS/DISCRETE MPS3906 b'lE D SILICON PLANAR EPITAXIAL TRANSISTOR PNP transistors in plastic TO-92 envelopes, primarily intended for industrial applications (e.g. Telecom). QUICK REFERENCE DATA ~ v CBO max. 40 V Collector-emitter voltage (open base) “ v CEO max. 40 V Collector current (DC) Collector-base voltage (open emitter , 617 ■MPS3906 b b S B ' m 0 0 2 7 ^ 7 TS7 * A P X N AUER PHILIPS/DISCRETE b^E D J V


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PDF MPS3906 bb53R31 DD27RR6 PS3906
1996 - 2n5087

Abstract: 2n5086
Text: °C h FE, DC CURRENT GAIN 200 -55°C 100 80 60 40 0.003 0.005 MPS3906 VCE = 1.0 V VCE = 10 V 0.01 , , COLLECTOR CURRENT (mA) TA = 25°C MPS3906 100 TA = 25°C PULSE WIDTH = 300 µs 80 DUTY CYCLE 2.0% 300 , IC = -1.0 mA MPS3906 hfe 200 @ IC = -1.0 mA hoe, OUTPUT ADMITTANCE (m mhos) VCE = -10 Vdc f = , °C MPS3906 hfe 200 @ IC = 1.0 mA MPS3905 hfe 100 @ IC = 1.0 mA 1.0 2.0 5.0 10 20 IC, COLLECTOR


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PDF 2N5086/D 2N5086 2N5087* 226AA) 2N5086/D* 2n5087
Not Available

Abstract: No abstract text available
Text: MPS3906 M AXIMUM RATINGS Rating C o llector-E m itter Voltage Collector-Base Voltage Em itter-Base Voltage C o lle ctor C urrent - C ontinuous Total Device D issipation i« T /\ = 253 C Derate above 25C C Total Device D issipation (> / Tq = 25°C Derate above 25'C O perating and Storage Junction Tem perature Range PD pd Symbol v CEO v CBO v EBO Value -4 0 -4 0 - 5.0 -2 0 0 625 5.0 1.5 12 - , DIODES 2-275 MPS3906 ELECTRICAL CHARACTERISTICS (continued) (T/\ = 2 5 C unless otherw ise noted


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PDF MPS3906 O-226AA)
Not Available

Abstract: No abstract text available
Text: MPS3906 PNP Silicon COLLECTOR 3 EMITTER MAXIMUM RATINGS Rating Symbol Collector- Base Voltage Unit VCEO VCBO VEBO Collector- Emitter Voltage Value -40 Vdc -40 Vdc -5.0 Vdc "c , current before placing orders. MPS3906 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted


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PDF MPS3906 -55to
2n2222 to-92

Abstract: 2N2222A TO-92 2N2907A TO-92 2N2222A TO-18 transistors 458 transistor 2n2222a data sheet to-92 Transistor BCY58 2N3904 TO-92 type 2n3904 TO-92 2N2222 pnp
Text: MPS3904 TO-92 40 100 500 100 300 180 990 MPS3906 806 PH2222 TO


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PDF 2N2222 2N2907A 2N2222A 2N2369 2N2369A 2N3904 2N3906 2N4401 MPS3906 2n2222 to-92 2N2222A TO-92 2N2907A TO-92 2N2222A TO-18 transistors 458 transistor 2n2222a data sheet to-92 Transistor BCY58 2N3904 TO-92 type 2n3904 TO-92 2N2222 pnp
2N5227

Abstract: 2N3905 MOTOROLA MPS3906 mmt3905 2n995 mm3906 MPS5139 SILICON DICE motorola
Text: MMCM3905 MMCM3906 MMT75 MMT3905 MMT3906 MPS3905 MPS3906 MPS5139 MPS6516 MPS6517 METALLIZATION - Top


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PDF DMB155 2C3906 2N995 2N3250 2N3251 2N3905 2N3906 2N4125 2N4126 2N5227 2N3905 MOTOROLA MPS3906 mmt3905 mm3906 MPS5139 SILICON DICE motorola
2004 - TO226AA

Abstract: 226AA msc2295 P2N2222A MPS3904
Text: . Switching Transistors NPN - - PNP P2N2907A MPS2907A 2N4403 2N3906 - - MPS3906 MPS3638A - - - MMBT2907ALT1 -


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PDF MPSH10 BF959 MPSH17 MPS918 MPS5179 MPS3563 MMBTH10LT1 MMBTH10-4LT1 MMBT918LT1 BSV52LT1 TO226AA 226AA msc2295 P2N2222A MPS3904
2001 - AN-569

Abstract: BCX71J BCX71JLT1 MPS3905 MPS3906 SMD310
Text: 30 50 70 100 1.0 100 TA = 25°C MPS3906 0.8 IC = 1.0 mA 0.6 10 mA 50 mA , . Current­Gain - Bandwidth Product Figure 14. Capacitance 10 MPS3906 hfe 200 @ IC = -1.0 mA 7.0 , hfe 100 @ IC = 1.0 mA 3.0 2.0 0.1 100 MPS3906 hfe 200 @ IC = 1.0 mA Figure 15


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PDF BCX71J r14525 BCX71J/D AN-569 BCX71J BCX71JLT1 MPS3905 MPS3906 SMD310
N4030

Abstract: 2N2906 to92 2pa733 2N4033 MPS3640 2PA1015 2N2907 TO-92 2PA1015L
Text: * MPS3640 MPS3702 MPS3703 MPS3906 MPS6516 MPS6517 MPS6518 MPS6519 MPS6522 MPS6523 MPS6533 MPS6534 MPS8598


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PDF 2N2904A 2N2905 2N2905A 2N2906 2N2906A 2N2907 2N2907A 2N3906 N4030 2N4031 2N2906 to92 2pa733 2N4033 MPS3640 2PA1015 2N2907 TO-92 2PA1015L
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