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ON Semiconductor
MPS3646 BIPOLAR TRANSISTOR; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:-; Transition Frequency ft:-; Power Dissipation Pd:625mW; DC Collector Current:300mA; DC Current Gain hFE:120hFE; No. of Pins:3Pins; Product Range:- RoHS Compliant: No MPS3646 ECAD Model
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Newark element14 MPS3646 Bulk 0 10,000 - - - - - Buy Now
ON Semiconductor
MPS3646RLRA MPS3646RLRA ECAD Model
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Bristol Electronics MPS3646RLRA 2,484 - - - - - Buy Now
ON Semiconductor
MPS3646RLRAG MPS3646RLRAG ECAD Model
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Bristol Electronics MPS3646RLRAG 30,000 - - - - - Buy Now
ON Semiconductor
MPS3646G MPS3646G ECAD Model
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Bristol Electronics MPS3646G 10,000 - - - - - Buy Now
Motorola Semiconductor Products
MPS3646 MPS3646 ECAD Model
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ComS.I.T. MPS3646 2,577 - - - - - Get Quote

MPS3646 datasheet (31)

Part ECAD Model Manufacturer Description Type PDF
MPS3646 MPS3646 ECAD Model Motorola Switching Trasnistor(NPN Silicon) Original PDF
MPS3646 MPS3646 ECAD Model Motorola SWITCHING TRANSISTOR Original PDF
MPS3646 MPS3646 ECAD Model On Semiconductor Switching Transistor Original PDF
MPS3646 MPS3646 ECAD Model On Semiconductor Switching Transistor Original PDF
MPS3646 MPS3646 ECAD Model ON Semiconductor Transistors (BJT) - Single, Discrete Semiconductor Products, TRANSISTOR SW NPN 15V TO-92 Original PDF
MPS3646 MPS3646 ECAD Model Continental Device India Semiconductor Device Data Book 1996 Scan PDF
MPS3646 MPS3646 ECAD Model Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan PDF
MPS3646 MPS3646 ECAD Model Motorola Motorola Semiconductor Datasheet Library Scan PDF
MPS3646 MPS3646 ECAD Model Motorola The European Selection Data Book 1976 Scan PDF
MPS3646 MPS3646 ECAD Model Motorola Semiconductor Data Library Volume 3 1974 Scan PDF
MPS3646 MPS3646 ECAD Model Motorola Switching Transistor NPN Silicon Scan PDF
MPS3646 MPS3646 ECAD Model Others Shortform Transistor PDF Datasheet Scan PDF
MPS3646 MPS3646 ECAD Model Others Shortform Transistor PDF Datasheet Scan PDF
MPS3646 MPS3646 ECAD Model Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
MPS3646 MPS3646 ECAD Model Others Semiconductor Master Cross Reference Guide Scan PDF
MPS3646 MPS3646 ECAD Model Others Shortform Transistor Datasheet Guide Scan PDF
MPS3646 MPS3646 ECAD Model Others Vintage Transistor Datasheets Scan PDF
MPS3646 MPS3646 ECAD Model Others Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan PDF
MPS3646 MPS3646 ECAD Model National Semiconductor Shortform National Semiconductor Datasheet Scan PDF
MPS3646 MPS3646 ECAD Model National Semiconductor NPN SWitching Transistors Scan PDF

MPS3646 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2006 - MPS-3646

Abstract: No abstract text available
Text: ON Semiconductort Switching Transistor MPS3646 NPN Silicon w ON Semiconductor , March, 2006 − Rev. 3 1 Publication Order Number: MPS3646 /D MPS3646 ELECTRICAL , 2 ts Vout MPS3646 CURRENT GAIN CHARACTERISTICS 100 MPS3646 VCE = 1 V h FE, DC , ) 1.0 MPS3646 TJ = 25°C 0.8 IC = 10 mA 50 mA 200 mA 100 mA 0.6 0.4 0.2 0 , ://onsemi.com 3 200 MPS3646 DYNAMIC CHARACTERISTICS 200 200 VCC = 10 V TJ = 25°C 100 70


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PDF MPS3646 MPS3646/D MPS-3646
1996 - mps3646

Abstract: mps3646 equivalent TRANSISTOR 023
Text: MOTOROLA Order this document by MPS3646 /D SEMICONDUCTOR TECHNICAL DATA Switching Transistor MPS3646 NPN Silicon Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 , . Motorola Small­Signal Transistors, FETs and Diodes Device Data © Motorola, Inc. 1996 1 MPS3646 , Transistors, FETs and Diodes Device Data MPS3646 CURRENT GAIN CHARACTERISTICS 100 MPS3646 VCE = 1 V , MPS3646 VCE = 1 V h FE, DC CURRENT GAIN TJ = 125°C 25°C 100 ­15°C 70 ­ 55°C 50


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PDF MPS3646/D MPS3646 MPS3646/D* mps3646 mps3646 equivalent TRANSISTOR 023
2001 - mps3646 equivalent

Abstract: transistor N 343 AD MPS3646 ad 303 transistor
Text: ON Semiconductort Switching Transistor MPS3646 NPN Silicon ON Semiconductor Preferred , . 1 1 Publication Order Number: MPS3646 /D MPS3646 ELECTRICAL CHARACTERISTICS (TA = 25 , RC <2 ns PULSE WIDTH (t1) = 300 nsDUTY CYCLE = 2% CS MPS3646 CURRENT GAIN CHARACTERISTICS 100 MPS3646 VCE = 1 V h FE, DC CURRENT GAIN 70 TJ = 125°C 50 25°C -15°C 30 , 70 100 200 200 MPS3646 VCE = 1 V h FE, DC CURRENT GAIN TJ = 125°C 25°C 100


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PDF MPS3646 226AA) r14525 MPS3646/D mps3646 equivalent transistor N 343 AD MPS3646 ad 303 transistor
2001 - MPS3646

Abstract: No abstract text available
Text: MPS3646 ON Semiconductor Preferred Device 1 2 3 CASE 29­11, STYLE 1 TO­92 (TO­226AA) mW mW/°C Watts , Publication Order Number: MPS3646 /D MPS3646 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted , Time Test Circuit http://onsemi.com 802 MPS3646 CURRENT GAIN CHARACTERISTICS 100 70 h FE, DC CURRENT GAIN 50 TJ = 125°C 25°C -15°C -55°C MPS3646 VCE = 1 V 30 20 10 1.0 2.0 3.0 5.0 , 0.2 0 MPS3646 TJ = 25°C IC = 10 mA 50 mA 100 mA 200 mA 0.1 0.2 0.3 0.5 0.7 1.0


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PDF MPS3646 226AA) MPS3646
2001 - MPS3646

Abstract: TO226AA
Text: ON Semiconductort Switching Transistor MPS3646 NPN Silicon ON Semiconductor Preferred , October, 2001 - Rev. 2 1 Publication Order Number: MPS3646 /D MPS3646 ELECTRICAL , 50 Figure 2. Charge Storage Time Test Circuit http://onsemi.com 2 ts Vout MPS3646 CURRENT GAIN CHARACTERISTICS 100 MPS3646 VCE = 1 V h FE, DC CURRENT GAIN 70 TJ = 125°C 50 , CHARACTERISTICS VCE, MAXIMUM COLLECTOR-EMITTER VOLTAGE (VOLTS) 1.0 MPS3646 TJ = 25°C 0.8 IC = 10


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PDF MPS3646 O-226AA) r14525 MPS3646/D MPS3646 TO226AA
2001 - MPS3646

Abstract: No abstract text available
Text: MPS3646 ON Semiconductor Preferred Device 1 2 3 CASE 29-11, STYLE 1 TO-92 (TO-226AA) mW mW/°C Watts , October, 2001 - Rev. 2 Publication Order Number: MPS3646 /D MPS3646 ELECTRICAL CHARACTERISTICS (TA , Figure 2. Charge Storage Time Test Circuit http://onsemi.com 1205 MPS3646 CURRENT GAIN CHARACTERISTICS 100 70 h FE, DC CURRENT GAIN 50 TJ = 125°C 25°C -15°C - 55°C MPS3646 VCE = 1 V 30 20 10 1.0 , VOLTAGE (VOLTS) 0.8 0.6 0.4 0.2 0 MPS3646 TJ = 25°C IC = 10 mA 50 mA 100 mA 200 mA 0.1 0.2 0.3


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PDF MPS3646 O-226AA) MPS3646
2006 - MPS3646

Abstract: No abstract text available
Text: ON Semiconductort Switching Transistor MPS3646 NPN Silicon w ON Semiconductor , Components Industries, LLC, 2006 March, 2006 - Rev. 3 1 Publication Order Number: MPS3646 /D MPS3646 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic , MPS3646 CURRENT GAIN CHARACTERISTICS 100 MPS3646 VCE = 1 V h FE, DC CURRENT GAIN 70 TJ = 125 , CHARACTERISTICS VCE, MAXIMUM COLLECTOR-EMITTER VOLTAGE (VOLTS) 1.0 MPS3646 TJ = 25°C 0.8 IC = 10


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PDF MPS3646 MPS3646/D MPS3646
2001 - mps3646

Abstract: mps3646 equivalent transistor N 343 AD
Text: ON Semiconductort Switching Transistor MPS3646 NPN Silicon ON Semiconductor Preferred , Order Number: MPS3646 /D MPS3646 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted , ://onsemi.com 2 ts Vout MPS3646 CURRENT GAIN CHARACTERISTICS 100 MPS3646 VCE = 1 V h FE, DC , MPS3646 TJ = 25°C 0.8 IC = 10 mA 50 mA 200 mA 100 mA 0.6 0.4 0.2 0 0.2 0.1 , , COLLECTOR CURRENT (mA) Figure 6. Temperature Coefficients http://onsemi.com 3 200 MPS3646


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PDF MPS3646 226AA) r14525 MPS3646/D mps3646 mps3646 equivalent transistor N 343 AD
1996 - MPS-3646

Abstract: MPS3646
Text: MOTOROLA Order this document by MPS3646 /D SEMICONDUCTOR TECHNICAL DATA Switching Transistor MPS3646 NPN Silicon Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 , . Motorola Small­Signal Transistors, FETs and Diodes Device Data © Motorola, Inc. 1996 1 MPS3646 , % Motorola Small­Signal Transistors, FETs and Diodes Device Data MPS3646 CURRENT GAIN CHARACTERISTICS 100 MPS3646 VCE = 1 V h FE, DC CURRENT GAIN 70 TJ = 125°C 50 25°C ­15°C 30 ­ 55


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PDF MPS3646/D MPS3646 MPS3646/D* MPS-3646 MPS3646
Not Available

Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Switching Transistor NPN Silicon MPS3646 Motorola , Transistors, FETs and Diodes Device Data 2-5 5 5 MPS3646 ELEC TR IC A L C HAR AC TER ISTIC S (TA = 25 , , FETs and Diodes Device Data MPS3646 CURRENT GAIN CHARACTERISTICS IC, COLLECTOR CURRENT (mA , , FETs and Diodes Device Data 2 -5 5 7 MPS3646 ON" CONDITION CHARACTERISTICS Figure 5. C , Transistors, FETs and Diodes Device Data MPS3646 DYNAMIC CHARACTERISTICS td, D E LA Y T IM E (ns) 1.0


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PDF MPS3646 MPS3646
mps3646

Abstract: IC-100
Text:  MPS3646 (SILICON) NPN SILICON ANNULAR SWITCHING TRANSISTOR . designed for use in fast switching applications. Collector-Emitter Breakdown Voltage — BVCES = 40 Volts (Mini @ lc = 100 (JAdc DC , 2.410 2.670 0.095 0.105 S 2.030 2.670 0.080 0.105 CASE 2942 TO-92 890 MPS3646 (continued , Z,n - 50 fl 891 MPS3646 (continued) FIGURE 3 - OC CURRENT GAIN -w-4- , 0.3 0.5 1.0 2.0 3.0 5.0 7 0 10 20 30 50 70 100 200 300 >c, COLLECTOR CURRENT ImA) 892 MPS3646


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PDF MPS3646 mps3646 IC-100
Not Available

Abstract: No abstract text available
Text: , FETs and Diodes Device Data MPS3646 ELECTRICAL CHARACTERISTICS (TA = 25°C unle s s otherw ise , Motorola Small-Signal Transistors, FETs and Diodes Device Data MPS3646 CURRENT GAIN CHARACTERISTICS , , FETs and Diodes Device Data MPS3646 "ON" CONDITION CHARACTERISTICS !ß, BASE CURRENT (mA , Small-Signal Transistors, FETs and Diodes Device Data MPS3646 DYNAMIC CHARACTERISTICS td, DELAY TIME


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PDF PS3646
2N4264

Abstract: MPS3646
Text: Thermal Resistance, Junction to Case R&JC 83.3 'CAN MPS3646 * CASE 29-04, STYLE 1 TO-92 (TO-226AA) 3 , %. 2-294 Motorola Small-Signal Transistors, FETs and Diodes Device Data MPS3646 FIGURE 1 - SWITCHING


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PDF MPS3646* O-226AA) MPS3646 2N4264 MPS3646
2N4264

Abstract: No abstract text available
Text: 12 - 5 5 to +150 Unit Vdc Vdc Vdc Vdc m Adc mW m W '-C W atts mW'°C °C MPS3646 * CASE 29-04, STYLE , DIODES 2-265 MPS3646 F I G U R E 1 - S W I T C H I N G T I M E TE ST C I R C U I T '3 0 V M O V


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PDF MPS3646* O-226AA) TRANS15 MPS3646 2N4264
S4015

Abstract: No abstract text available
Text: MPS3646 * CASE 29-04, STYLE 1 TO-92 (TO-226AA) THERMAL CHARACTERISTICS Characteristic Th erm a l R , Diodes Device Data MPS3646 F I G U R E 1 - S W IT C H IN G T IM E T E S T C I R C U I T T o S a m


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PDF MPS3646* O-226AA) MPS3646 S4015
Not Available

Abstract: No abstract text available
Text: MPS3646 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V(BR)CEO (V)15 V(BR)CBO (V)40 I(C) Max. (A)300m Absolute Max. Power Diss. (W)625m’ Minimum Operating Temp (øC)-55õ Maximum Operating Temp (øC)150õ I(CBO) Max. (A)500n @V(CBO) (V) (Test Condition)20 h(FE) Max. Current gain.120 @I(C) (A) (Test Condition)30m @V(CE) (V) (Test Condition).40 f(T) Min. (Hz) Transition Freq350M @I(C) (A) (Test Condition)30m @V(CE) (V) (Test Condition)10 Power Gain Min. (dB) @I(C) (A


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PDF MPS3646 Freq350M
2N3646

Abstract: MPS3013 2N3009 2n3647 2N5772 mps2501 2n3s11 2n3510 2N2501 2n3013
Text: M O T O R O L A SC -CDIODES/OPTOJ 34 DE | b 3 b ? a S 5 0D37Tfl(a [ 6367255 MOTOROLA SC (DIODES/OPTO) 34C 37986 SILICON SMALL-SIGNAL TRANSISTOR DICE (continued) T " %5~- t y DIE NO. - NPN LINE SOURCE - DMB104 2C3511 » This die provides performance similar to that of the following device types: 2N2501* 2N3009 2N3013 2N3014 2N3211 2N3510* 2N3S11 2N3646 2N3647 2N3648 2N4264 2N4265 2N5772 MMT3014 MPS2501 MPS3013 MPS3646 MPS5128 MPS5129 Designed for logic


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PDF 0D37Tfl DMB104 2C3511 2N2501* 2N3009 2N3013 2N3014 2N3211 2N3510* 2N3S11 2N3646 MPS3013 2n3647 2N5772 mps2501 2n3510 2N2501
2N4275

Abstract: 2N3640 2N3646 fairchild 2N4209 fairchild to-106 2N3639 2N4258A 2N5134 2n3646 2N3640 FAIRCHILD
Text: 30 0.20 30 350 5.0 200 0.5 to-106 26 MPS3646 15 18 10 30/120 30 0.20 30 350 5.0 625 1.0 to-92 27


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PDF 2NS228 to-92 2N3639 to-106 2N5134 2N4274 2N5224 2N4275 2N3640 2N3646 fairchild 2N4209 fairchild to-106 2N4258A 2N5134 2n3646 2N3640 FAIRCHILD
Not Available

Abstract: No abstract text available
Text: MPS3646 18 18 25 25 25 25 25 25 25 30 40 15 15 25 25 25 25 25 25 25 12 15 5 5 5 5 5 5 5 5 5 2 5


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PDF MPS3693 MPS3694 MPS3704 MPS3705 MPS3706 MPS3707 MPS3708 MPS3709 MPS3710
MPSL08

Abstract: MPS3640 TO-106 en744
Text: 2N5769 10 0.25 @ 10 0.20 @ 10 0.18 @ 30 0.40 0.20 0.20 0.20 @ @ @ @ EN3009 EN3013 MPS3646


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PDF MPS834 2N5134 EN3011 2N4274 EN744 2N4265 EN2369A MPS2369 2N5769 EN3009 MPSL08 MPS3640 TO-106 en744
2004 - TO226AA

Abstract: 226AA msc2295 P2N2222A MPS3904
Text: MPS3904 - MPS3646 MPS2369 MPS2369A - MMBT2222ALT1 MMBT3904LT1 - MMBT4401LT1 - MMBT2369LT1 MMBT2369ALT1


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PDF MPSH10 BF959 MPSH17 MPS918 MPS5179 MPS3563 MMBTH10LT1 MMBTH10-4LT1 MMBT918LT1 BSV52LT1 TO226AA 226AA msc2295 P2N2222A MPS3904
MPS3709

Abstract: MPS3563 MPS3710 MPS3708 MPS3707 MPS3706 MPS3705 MPS3704 MPS3693 MPS3646
Text: TO-92 MPS3646 40 15 5 0.625 0.3 0.5 20 15 25 30 120 300 100 30 1 0.5 0.4 0.2 0.28 0.5 0.75 0.95 30


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PDF MPS3563 MPS3646 MPS3693 NIPS3694 MPS6507 MPS651 MPS6511 MPS6512 MPS6513 MPS6514 MPS3709 MPS3710 MPS3708 MPS3707 MPS3706 MPS3705 MPS3704
2N3725

Abstract: No abstract text available
Text: NATL SEfllCOND (DISCRETE) 22E D t.SG113Q QG377ÖQ 2 NPN Switching Transistors by Ascending Vceo Part Type MMBT5134 PN5134 2N5224 BSV52 MMBT4274 MMBT5224 PN4274 BSX39 2N2369 2N2369A 2N3013 2N5769 2N5772 2N706 MMBT2369 MMBT2369A MMBT3013 MMBT3646 MMBT4275 MMBT5769 MMBT5772 MMBT706 MMBT706A MPS2369 MPS3646 MPS706 MPS706A PN2369 PN2369A PN3646 PN4275 2N2710 2N3014 MMBT2710 MMBT3014 2N3724 2N4013 2N3253 2N3725 2N4014 Vceo (V) Min 10 10 12 12 12 12 12 14 15 15 15 15 15 15 15 15 15 15 15 15 15 15 15 15


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PDF SG113Q QG377 MMBT5134 PN5134 2N5224 BSV52 MMBT4274 MMBT5224 PN4274 BSX39 2N3725
2N3014 TO-18

Abstract: MMBT5134 MMBT4274 BSX39 BSV52 2N5224 2N3013 2N2369A 2N2369 PN5134
Text: 6.0 200 75 TO-236 MPS2369 15 40 0.25 10/1.0 4.0 500 18 TO-92 MPS3646 15 40 0.20 30/3.0 5.0 350 28 TO


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PDF MMBT5134 O-236 PN5134 2N5224 BSV52 MMBT4274 MMBT5224 2N3014 TO-18 BSX39 2N3013 2N2369A 2N2369
MPS3563

Abstract: MPS3709 MPS3708 MPS3707 MPS3706 MPS3705 MPS3704 MPS3694 MPS3693 MPS3646
Text: TO-92 MPS3646 40 15 5 0.625 0.3 0.5 20 15 25 30 120 300 100 30 1 0.5 0.4 0.2 0.28 0.5 0.75 0.95 30


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PDF MPS3563 MPS3646 MPS3693 MPS3694 MPS650 MPS6507 MPS651 MPS6511 MPS6512 MPS6513 MPS3709 MPS3708 MPS3707 MPS3706 MPS3705 MPS3704
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