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MPS3638A MPS3638A ECAD Model
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MPS3638A datasheet (39)

Part ECAD Model Manufacturer Description Type PDF
MPS3638A MPS3638A ECAD Model Motorola Switching Transistor Original PDF
MPS3638A MPS3638A ECAD Model Motorola SWITCHING TRANSISTORS Original PDF
MPS3638A/ MPS3638A/ ECAD Model Motorola SWITCHING TRANSISTOR Original PDF
MPS3638A MPS3638A ECAD Model On Semiconductor Switching Transistor Original PDF
MPS3638A MPS3638A ECAD Model Continental Device India Semiconductor Device Data Book 1996 Scan PDF
MPS3638A MPS3638A ECAD Model Fairchild Semiconductor PNP Small Signal General Purpose Amplifiers & Switches Scan PDF
MPS3638A MPS3638A ECAD Model Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan PDF
MPS3638A MPS3638A ECAD Model Ferranti Semiconductors E-Line Transistors 1977 Scan PDF
MPS3638A MPS3638A ECAD Model General Electric Semiconductor Data Handbook 1977 Scan PDF
MPS3638A MPS3638A ECAD Model General Electric Planar passivated epitaxial PNP Silicon Transistor. -25V, -350mA. Scan PDF
MPS3638A MPS3638A ECAD Model Motorola Motorola Semiconductor Datasheet Library Scan PDF
MPS3638A MPS3638A ECAD Model Motorola Semiconductor Data Library Volume 3 1974 Scan PDF
MPS3638A MPS3638A ECAD Model Motorola Switching Transistos PNP Silicon Scan PDF
MPS3638A MPS3638A ECAD Model Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
MPS3638A MPS3638A ECAD Model Others Semiconductor Master Cross Reference Guide Scan PDF
MPS3638A MPS3638A ECAD Model Others Shortform Transistor Datasheet Guide Scan PDF
MPS3638A MPS3638A ECAD Model Others Vintage Transistor Datasheets Scan PDF
MPS3638A MPS3638A ECAD Model Others Basic Transistor and Cross Reference Specification Scan PDF
MPS3638A MPS3638A ECAD Model Others Shortform Transistor PDF Datasheet Scan PDF
MPS3638A MPS3638A ECAD Model Others Shortform Transistor PDF Datasheet Scan PDF

MPS3638A Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2N3638

Abstract: 2N3638A MPS-3638A MPS3638A NT 407 F MPS3638 2N3638/A "2n3638"
Text: MPS3638 (SILICON) MPS3638A NPN SILICON ANNULAR TRANSISTORS . designed for high-current , ) Current-Gain—Bandwidth Product — fT= 150 MHz (Min) @lc= 50 mAdc MPS3638A Electrically Similar to 2N3638.A NPN SILICON , MPS3638, MPS3638A (continued) ELECTRICAL CHARACTERISTICS (TA= 25°c unless otherwise noted , ) MPS3638A (I = 10 mAdc, VrF = 10 Vdc) MPS3638 MPS3638A (Ic = 50 mAdc, VCE = 1 Vdc) MPS3638 MPS3638A (lc - 300


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PDF MPS3638 MPS3638A MPS3638A 2N3638 MPS3638 2N3638A MPS-3638A NT 407 F 2N3638/A "2n3638"
MPS363B

Abstract: MPS3638 MPS3638A 2N4402 MPS-3638A
Text: CHARACTERISTICSI1) DC Current Gain (lC = -1.0 mAdc, Vce = -10 Vdc) MPS3638A hFE 80 - (lC = - 10 mAdc, Vce = -10 Vdc) MPS363B MPS3638A 20 100 - (lc = -50 mAdc, VCE = -1.0 Vdc) MPS3638 MPS3638A 30 100 — (Ic = -300 mAdc, Vce = -2.0 Vdc) MPS3638 MPS3638A 20 20 _ Collector-Emitter Saturation Voltage dc = , Current-Gain — Bandwidth Product MPS3638A fT 100 150 MHz Output Capacitance (Vcb = -10 Vdc, lE =0, f = 1.0 MHz) MPS3638 MPS3638A Cobo - 20 10 pF Input


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PDF MPS3638, O-226AA) MPS3638 MPS3638A MPS363B 2N4402 MPS-3638A
MPS3638

Abstract: MPS-3638A MPS3638A
Text: Current Gain {IC = - 1 .0 mAdc, V ce = - 1 0 Vdc) (IC = - 1 0 mAdc, Vce = - 1 0 Vdc) hFE MPS3638A MPS363B MPS3638A MPS3638 MPS3638A MPS3638 MPS3638A VCE(sat) - - VßEisat) - - 80 20 100 30 100 20 20 - - , Bandwidth Product (Vce = - 3 .0 Vdc, lc = - 5 0 mAdc, f - 100 MHz) MPS3638 MPS3638A Output Capacitance (VcB , - MHz pF - 20 10 pF - MPS3638 MPS3638A Cjbo MPS3638 MPS3638A hie hre MPS3638 MPS3638A hfe MPS3638 MPS3638A h0e - 65 25 2000 Ohms X 104 - - 25 100 - 26 15 _ - - 1.2


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PDF MPS3638, O-226AA) MPS3638 MPS3638A MPS-3638A
2001 - MPS-3638A

Abstract: mps3638a
Text: °C MPS3638A 1 2 3 CASE 29-11, STYLE 1 TO-92 (TO-226AA) THERMAL CHARACTERISTICS , , LLC, 2001 1197 March, 2001 - Rev. 1 Publication Order Number: MPS3638A /D MPS3638A , MPS3638A SWITCHING TIME EQUIVALENT TEST CIRCUIT -30 V < 2 ns 1.0 k 10 to 100 µs, DUTY CYCLE = 2% 200 +14 , Figure 4. Charge Data http://onsemi.com 1199 MPS3638A TRANSIENT CHARACTERISTICS (Continued) 25 , ://onsemi.com 1200 MPS3638A SMALL-SIGNAL CHARACTERISTICS NOISE FIGURE VCE = -10 Vdc, TA = 25°C Bandwidth


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PDF MPS3638A O-226AA) MPS-3638A mps3638a
2001 - MPS-3638A

Abstract: 2N4402 MPS3638A
Text: ON Semiconductort MPS3638A Switching Transistor PNP Silicon MAXIMUM RATINGS Rating , March, 2001 ­ Rev. 1 1 Publication Order Number: MPS3638A /D MPS3638A ELECTRICAL , ://onsemi.com 2 MPS3638A SWITCHING TIME EQUIVALENT TEST CIRCUIT -30 V -30 V +2 V 200 < 2 ns , (mA) Figure 4. Charge Data http://onsemi.com 3 300 500 MPS3638A TRANSIENT , ://onsemi.com 4 200 300 500 300 500 MPS3638A SMALL­SIGNAL CHARACTERISTICS NOISE FIGURE


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PDF MPS3638A 226AA) r14525 MPS3638A/D MPS-3638A 2N4402 MPS3638A
2006 - MPS3638A

Abstract: 2N4402
Text: ON Semiconductort MPS3638A Switching Transistor PNP Silicon w This device is available , : MPS3638A /D MPS3638A ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued , ; Duty Cycle v 2.0%. http://onsemi.com 2 MPS3638A SWITCHING TIME EQUIVALENT TEST CIRCUIT -30 V , , COLLECTOR CURRENT (mA) Figure 4. Charge Data http://onsemi.com 3 300 500 MPS3638A , http://onsemi.com 4 200 300 500 300 500 MPS3638A SMALL-SIGNAL CHARACTERISTICS


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PDF MPS3638A MPS3638A/D MPS3638A 2N4402
2006 - Not Available

Abstract: No abstract text available
Text: ON Semiconductort MPS3638A Switching Transistor PNP Silicon w This device is available , Components Industries, LLC, 2006 March, 2006 − Rev. 2 1 Publication Order Number: MPS3638A /D MPS3638A ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Min , : Pulse Width v 300 ms; Duty Cycle v 2.0%. http://onsemi.com 2 MPS3638A SWITCHING TIME EQUIVALENT , ://onsemi.com 3 300 500 MPS3638A TRANSIENT CHARACTERISTICS (Continued) 25°C 100°C 100 100


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PDF MPS3638A MPS3638A/D
MPSA56

Abstract: MPSA20 MPSA14 MPSA13 MPSA12 MPSA06 MPSA05 GES5821 GES5820 GES5819
Text: 5.0 500 350 MPS3638A PNP 25 100 - i. 50 1 .28 50 2.5 175 5.0 500 350 MPS3702 PNP 25 60 300 50 5 .26 , PNP 25 170 300 30 30 10 3.1 MPS3638A PNP 25 / 5 170 300 30 30 10 3.1 110 Silicon Transistors MPS363M The MPS3638 and MPS3638A are planar, epitaxial, passivated PNP silicon transistors intended for , €”30mA) (Ta=25°C,unless otherwise specified) Symbol VCEO* V(BH)CES MPS3638A ÍMPS3638 IMPS3638A [ MPS3638 [ MPS3638A [MPS3638 I MPS3638A hp»* hrE* Vce (sat) * Vce (satï * Vbe (SAT) * Vbe (SAT) * 1358


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PDF GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 MPSA20n) -300mA, MPSA56 MPSA20
1997 - 2N4402

Abstract: MPS3638A MPS3638A motorola MOTOROLA MPS3638A MPS-3638A
Text: MOTOROLA Order this document by MPS3638A /D SEMICONDUCTOR TECHNICAL DATA Switching Transistor PNP Silicon MPS3638A COLLECTOR 3 2 BASE 1 EMITTER MAXIMUM RATINGS 1 Rating , Device Data © Motorola, Inc. 1997 1 MPS3638A ELECTRICAL CHARACTERISTICS (TA = 25°C unless , , FETs and Diodes Device Data MPS3638A SWITCHING TIME EQUIVALENT TEST CIRCUIT ­ 30 V ­ 30 V 200 , 500 Figure 4. Charge Data 3 MPS3638A TRANSIENT CHARACTERISTICS (Continued) 100°C 25


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PDF MPS3638A/D MPS3638A 2N4402 MPS3638A MPS3638A motorola MOTOROLA MPS3638A MPS-3638A
1996 - 2n4403 motorola

Abstract: MPS3638 MPS3638 equivalent transistor 2n4403 equivalent motorola 2n4403 2N4402 2N4403 MPS3638A
Text: Max Unit ON CHARACTERISTICS(2) DC Current Gain (IC = ­1.0 mAdc, VCE = ­10 Vdc) MPS3638A hFE 80 - (IC = ­10 mAdc, VCE = ­10 Vdc) MPS3638 MPS3638A 20 100 - - (IC = ­50 mAdc, VCE = ­1.0 Vdc) MPS3638 MPS3638A 30 100 - - (IC = ­300 mAdc, VCE = ­2.0 Vdc) MPS3638 MPS3638A 20 20 - - - - ­0.25 ­1.0 - ­0.80 ­1.1 ­2.0 100 150 , ­0.5 Vdc, IC = 0, f = 1.0 MHz) fT MPS3638 MPS3638A Cobo MPS3638 MPS3638A Small­Signal


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PDF MPS3638/D MPS3638 MPS3638/D* 2n4403 motorola MPS3638 equivalent transistor 2n4403 equivalent motorola 2n4403 2N4402 2N4403 MPS3638A
TE 2549 MOTOROLA

Abstract: No abstract text available
Text: MPS3638A 1 EMITTER MAXIMUM RATINGS Rating C o lle c to r-E m itte r Voltage C o lle c to r-E m , MPS3638A ELECTRICAL CHARACTERISTICS Oa = 2 5 °C unless oth e rw is e noted) (C ontinued , Motorola Small-Signal Transistors, FETs and Diodes Device Data 2-547 MPS3638A SWITCHING TIME , Transistors, FETs and Diodes Device Data MPS3638A TRANSIENT CHARACTERISTICS (Continued) 2 5 ° C , Diodes Device Data 2-549 MPS3638A SMALL-SIGNAL CHARACTERISTICS NOISE FIGURE VcE = -10 Vdc, Ta


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PDF MPS3638A TE 2549 MOTOROLA
PS3638

Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MPS3638A /D S w itching , O T O R O L A © M otorola, Inc. 1997 MPS3638A ELECTRICAL CHARACTERISTICS (T /\ = 2 5 °C un le , le < 2.0 % . 2 Motorola S m all-S ignal Transistors, FETs and Diodes Device Data MPS3638A , Motorola S m all-S ignal Transistors, FETs and Diodes Device Data 3 MPS3638A TRANSIENT , Diodes Device Data MPS3638A SMALL-SIGNAL CHARACTERISTICS NOISE FIGURE V c E = - 1 0 V d c , T a = 2


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PDF MPS3638A/D PS3638A O-226AA) PS3638
MPS3638

Abstract: MPS3638A
Text: G E SOLID STATE " Ol 3>E13Ö?S0Ö1 DGl?^ 0 3875081 G E SOLID STATE 01E 17978 D "Ti— ¿, cf_-/ cf Signal Transistors_!_-_I_ MPS3638, MPS3638A Silicon Transistors TO-92 The GE/RCA MPS3638 and 3638A are planar epitaxial passivateci PNP silicon transistors intended for general purpose applications , MPS3638, MPS3638A ELECTRICAL CHARACTERISTICS, At Ambient Temperature (TA) = 25°C Unless Otherwise Specified CHARACTERISTICS SYMBOL LIMITS UNITS MPS3638 MPS3638A MIN. TYP. MAX. MIN. TYP. MAX


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PDF MPS3638, MPS3638A MPS3638 -50mA, -300mA, -30mA) -10mA MPS3638A
MPS3638A

Abstract: MPS-3638A
Text: MPS3638A PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Absolute Maximum Ratings (Ta = 25 OC) Parameter 1.Emitter 2.Base 3.Collector TO-92 Plastic Package Weight approx. 0.19g Symbol Value Unit Collector Base Voltage -VCBO 25 V Collector Emitter Voltage -VCEO 25 V Emitter Base Voltage -VEBO 4 V Collector , MPS3638A DC Current Gain Collector Saturation Region "On" Voltages SEMTECH ELECTRONICS LTD


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PDF MPS3638A MPS3638A MPS-3638A
Not Available

Abstract: No abstract text available
Text: G E SOLID S T ATE G E SOLID STATE 01 d F | b û ? S O Ô 1 QOlTTTñ 01E 17978 -p- ¿ î D ( -f ` Q 1 ~ ~ 3875081 Signal Transistors MPS3638, MPS3638A Silicon Transistors TO-92 The GE/R CA M PS3638 and 3638A are planar epitaxial passivated PNP silicon transistors intended for general purpose applications. The units feature low collector saturation voltage, controlled current , _ Signal Transistors MPS3638, MPS3638A T ' I I - H ELEC TR IC A L CHARACTERISTICS, At Ambient


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PDF MPS3638, MPS3638A PS3638 300mA, 300jis
2004 - TO226AA

Abstract: 226AA msc2295 P2N2222A MPS3904
Text: . Switching Transistors NPN - - PNP P2N2907A MPS2907A 2N4403 2N3906 - - MPS3906 MPS3638A - - - MMBT2907ALT1 -


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PDF MPSH10 BF959 MPSH17 MPS918 MPS5179 MPS3563 MMBTH10LT1 MMBTH10-4LT1 MMBT918LT1 BSV52LT1 TO226AA 226AA msc2295 P2N2222A MPS3904
2N3638

Abstract: MPS8093 MPS6534 motorola 2N3072 2N3133 MOTOROLA 2n3638a 2N5221 2n3133 2n2907a motorola 2n3136
Text: MPS3635 MPS3638.A MPS3702 MPS3703 MPS5142 MPS5143 MPS6533 MPS6534 MPS6535 MPS8093 MPS8598 MPS8599 MPSDSS


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PDF DMB151 2C2907A 2N721 2N722 2N978 2N1131 2N1132 2N1991 2N2694 2N2695 2N3638 MPS8093 MPS6534 motorola 2N3072 2N3133 MOTOROLA 2n3638a 2N5221 2n3133 2n2907a motorola 2n3136
MPS3645

Abstract: MPS3644 ZTX4403 MPS2907A MPS2222A BCY79P BCY77P BCY65EP BCY59P 2N4403
Text: 150 2 200 10 43* 155* 10 2N4123 MPS3638A 25 500 1 300 30 100 — 50 150 15 75 170 300 — MPS3638 25


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PDF MPS2907A MPS2222A MPS3645 BCY77P BCY65EP MPS3644 ZTX4403 /2N4401 \ZTX4401 2N4402 MPS2222A BCY79P BCY65EP BCY59P 2N4403
CSA708Y

Abstract: No abstract text available
Text: 0.625 0.6 15 50 80 25 300 100 25 20 100 MPS3638A 1.1 0.8 240 50


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PDF CSA643G MPS3645 MPS3702 MPS3703 MPS4354 CSA708Y
csa970a

Abstract: MPS3645 CSA708Y CSA708R CSA708G CSA708 CSA643Y CSA643R CSA643G CSA970
Text: 30 , 50 1 1 0.8 2 300 20 10 10 MPS3638A 25 25 4 0.625 0.5 0.035 15 20


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PDF CSA643G CSA6430 CSA643R CSA643Y CSA708 CSA708G MPS3645 MPS3702 MPS3703 MPS4354 csa970a CSA708Y CSA708R CSA970
2N3566

Abstract: 2N3638 2N3638A 2n3638 fairchild PN6076 BC738 high voltage npn to-92 bc119 NPN MPS3393 2N5135
Text: 2N3638A 25 -/100 50 0.25 50 10 150 170 300 0.7 T0-105 21 MPS3638A 25 -/100 50 0.25 50 10 150 170 625 1.0


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PDF MPS2924 2N4124 MPS3393 EN5172 O-106 MPS5172 2N5135 O-105 2NS225 2NS226 2N3566 2N3638 2N3638A 2n3638 fairchild PN6076 BC738 high voltage npn to-92 bc119 NPN MPS3393 2N5135
MPS3645

Abstract: MPS3644 CSA643R CSA643Y CSA708 CSA643G CSA708R CSA708Y CSA970 CSA970A
Text: 0.035 15 20 30 20 300 , 50 10 2 1 10 0.25 1 0.8 1.1 2 50 300 20 100 50 170 TO-92 MPS3638A 25 25 4


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PDF CSA643G CSA6430 CSA643R CSA643Y CSA708 MPS3638A MPS3644 MPS3645 MPS3702 MPS3703 CSA708R CSA708Y CSA970 CSA970A
transistor bI 240

Abstract: TRANSISTOR a31
Text: ) MMST2907 MMST2907A MMST4403 UMT2907A UMT4403 RXT2907A PN2907 PN2907A 2N4403 2N5819 2N6076 MPS3638 MPS3638A


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PDF OT323) 500mA 250MHZ transistor bI 240 TRANSISTOR a31
Not Available

Abstract: No abstract text available
Text: 80 25 50 500 100 25 200 150 1 100 MPS3638A TO-92 50 10 10


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PDF CSB1426P CSB1426Q CSB1426R MPS751 O-92-1
MPS8093

Abstract: mps404
Text: ALLEGRO MICROSYSTEMS INC 8514019 SPRAGUE, 13 D GS0M33Ô 00035^7 7 ALGR 93D 03597 2 ) S E M I C O N D S / ICS PLASTIC-CASE BIPOLAR TRANSISTORS T'Ql'Qb ' PNP Transistors `MPS' Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C ^CBO DC Current Gain ^CE(sat) h NF1 (dB) _ _ _ _ _ _ _ Device Type MPS404 MPS404A MPS3638 MPS3638A MPS3702 MPS3703 MPS4248 MPS4249 MPS4250 MPS4250A MPS4354 MPS4355 MPS4356 MPS5138 MPS5139 MPS6516 MPS6517 MPS6518 MPS6519 MPS6522


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PDF GS0M33Ô MPS404 MPS404A MPS3638 MPS3638A MPS3702 MPS3703 MPS4248 MPS4249 MPS4250 MPS8093
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