The Datasheet Archive

Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
LT1158IN#TR Linear Technology IC HALF BRDG BASED MOSFET DRIVER, PDIP16, 0.300 INCH, PLASTIC, DIP-16, MOSFET Driver
LT1162CN Linear Technology IC 1.5 A FULL BRDG BASED MOSFET DRIVER, PDIP24, 0.300 INCH, PLASTIC, DIP-24, MOSFET Driver
LT1158IS#TR Linear Technology IC 15 A HALF BRDG BASED MOSFET DRIVER, PDSO16, SOIC-16, MOSFET Driver
LT1158IN#TRPBF Linear Technology IC HALF BRDG BASED MOSFET DRIVER, PDIP16, 0.300 INCH, PLASTIC, DIP-16, MOSFET Driver
LT1161CS Linear Technology IC 4 CHANNEL, BUF OR INV BASED MOSFET DRIVER, PDSO20, SO-20, MOSFET Driver
LT1160IS#TR Linear Technology IC 1.5 A HALF BRDG BASED MOSFET DRIVER, PDSO14, 0.150 INCH, PLASTIC, SO-14, MOSFET Driver

MOSFET, rjh 3077 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2012 - MOSFET, 3077

Abstract: 3077 mosfet
Text: S12- 3077 -Rev. B, 24-Dec-12 For technical questions, contact: pmostechsupport@vishay.com www.vishay.com , : pmostechsupport@vishay.com Document Number: 63784 S12- 3077 -Rev. B, 24-Dec-12 This document is subject to change without , On-Resistance vs. Junction Temperature Document Number: 63784 S12- 3077 -Rev. B, 24-Dec-12 For technical , www.vishay.com 4 For technical questions, contact: pmostechsupport@vishay.com Document Number: 63784 S12- 3077 , determine the current rating, when this rating falls below the package limit. Document Number: 63784 S12- 3077


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PDF SiRA14DP SiRA14DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 MOSFET, 3077 3077 mosfet
24v 12v 10A regulator

Abstract: 12v 10A regulator LTM4600 AN103 LTM4600EV 24v 10A regulator 1000-SF
Text: module first flows from the junction ( RJH ) to the µModule case, and then it reaches the heatsink and , thermal conductive pad on a heatsink. This test case uses a RHA HEATSINK Module REGULATOR RJH PCB RJH : 9.5 RHA: 21.5 RJB: 4.7 RJB RBA: 20.4 TJ UNIT: °C/W TA RBA TA (a


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PDF LTM4600 20VIN LTM4600EV 28VIN LTM4600HVEV effici00 1000SF an103fb 24v 12v 10A regulator 12v 10A regulator AN103 24v 10A regulator 1000-SF
2005 - LTM4600

Abstract: 24v 12v 10A regulator AN103 CIS20069 LTM4600EV AN-1038 C9010
Text: generated from the module first flows from the junction ( RJH ) to the µModule case, and then it reaches the , through a thermal conductive pad on a heatsink. This test RHA HEATSINK µModule RJH PCB RJH


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PDF LTM4600 20VIN LTM4600EV 28VIN LTM4600HVEV 1000SF CIS20069 an103f 24v 12v 10A regulator AN103 CIS20069 AN-1038 C9010
Not Available

Abstract: No abstract text available
Text: . Package limited. Document Number: 63784 S12- 3077 -Rev. B, 24-Dec-12 For technical questions, contact , technical questions, contact: pmostechsupport@vishay.com Document Number: 63784 S12- 3077 -Rev. B, 24 , Gate Charge (nC) Gate Charge Document Number: 63784 S12- 3077 -Rev. B, 24-Dec-12 16 20 , www.vishay.com 4 For technical questions, contact: pmostechsupport@vishay.com Document Number: 63784 S12- 3077 , this rating falls below the package limit. Document Number: 63784 S12- 3077 -Rev. B, 24


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PDF SiRA14DP SiRA14DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
2007 - LTN20069

Abstract: transistor RJp AN110 LTM4601
Text: module first flows from the junction ( RJH ) to the Module case/heatsink interface, and then it reaches , HEATSINK Module PCB RJH RJB RBA RJH : 12.8 RHA: 30.0 UNIT: °C/W TA TJ RJB: 4.7 RBA


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PDF LTM4601 1000SF LTN20069 an110f AN110-8 LTN20069 transistor RJp AN110
LTN20069

Abstract: AN110 LTM4601 Gap Pad 1000sf Wakefield Engineering LTN20069
Text: the junction ( RJH ) to the case/heatsink interface, and then it reaches the heatsink and dissipates , REGULATOR PCB RJH RJB RBA RJH : 12.8 RHA: 30.0 UNIT: °C/W TA TJ RJB: 4.7 TA (a


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PDF LTM4601 1000SF LTN20069 an110fa AN110-8 LTN20069 AN110 Gap Pad 1000sf Wakefield Engineering LTN20069
flyback equivalent

Abstract: rsl2 24v 24v active clamp forward converter lt1680
Text: capability through the SL/ADJ pin. where Rjh is the Thevenin resistance of the resistor divider. Actual , 30k sets the desired reference voltage and has a Rjh of 18k, which meets both design requirements


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PDF LT1680 000pF LT1680 60kHz 500kHz, flyback equivalent rsl2 24v 24v active clamp forward converter
2008 - P65N06

Abstract: 65N06 similar mosfet of fqp65n06 30A60CT MOSFET, 3077 AC ENERGY SAVING light CIRCUIT DIAGRAM BT412 IRFB3077 fb3077 FQP65N06
Text: (% ) 84 80 IR F B 3077 F Q P 65N 06 S B R 30A 60C T M B R B 30H 60C T 76 0 5 10


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PDF D-81541 P65N06 65N06 similar mosfet of fqp65n06 30A60CT MOSFET, 3077 AC ENERGY SAVING light CIRCUIT DIAGRAM BT412 IRFB3077 fb3077 FQP65N06
2006 - A113

Abstract: MRF9582NT1
Text: Capacitance (VDS = 12.5 Vdc, VGS = 0, f = 1.0 MHz) Ciss - 30.77 - pF Output Capacitance


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PDF MRF9582NT1 A113 MRF9582NT1
2006 - Case 449-02

Abstract: No abstract text available
Text: 0, f = 1.0 MHz) Ciss — 30.77 — pF Output Capacitance (VDS = 12.5 Vdc, VGS = 0


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PDF MRF9582NT1 Case 449-02
TRANSISTOR G13

Abstract: C1u TRANSISTOR mrf154 amplifier MRF157
Text: rjH , C o n n e c tin g W ire s t o R 1 4 a n d R 15, 2.5 c m E a ch # 2 0 A W G R1 R4 _ L3 - 10 |iH


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PDF MRF157 TRANSISTOR G13 C1u TRANSISTOR mrf154 amplifier
2006 - Not Available

Abstract: No abstract text available
Text: Ciss Coss Crss - - - 30.77 15.6 0.82 - - - pF pF pF VGS RDS(on) - - 2.4 0.5 - 0.8 Vdc V(BR


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PDF MRF9582NT1 MRF9582NT1
2006 - Not Available

Abstract: No abstract text available
Text: Ciss Coss Crss - - - 30.77 15.6 0.82 - - - pF pF pF VGS RDS(on) - 0.05 2.4 0.5 - 0.8 Vdc V(BR


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PDF MRF9582NT1 MRF9582NT1
2001 - CPH3308

Abstract: MOSFET, 3077
Text: , TOKYO, 110-8534 JAPAN O2501 TS IM TA- 3077 No.7075-1/4 CPH3308 Continued from preceding page


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PDF ENN7075 CPH3308 CPH3308] CPH3308 MOSFET, 3077
2006 - Case 449-02

Abstract: A113 MRF9582NT1
Text: = 0, f = 1.0 MHz) Ciss - 30.77 - pF Output Capacitance (VDS = 12.5 Vdc, VGS = 0


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PDF MRF9582NT1 Case 449-02 A113 MRF9582NT1
2006 - Case 449-02

Abstract: MRF9582NT1 855F
Text: 0.5 0.8 Input Capacitance (VDS = 12.5 Vdc, VGS = 0, f = 1.0 MHz) Ciss - 30.77


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PDF MRF9582NT1 Case 449-02 MRF9582NT1 855F
Not Available

Abstract: No abstract text available
Text: =100£1 100mV+V, 2200 , IRF541 Rjh -1000 For this example: A ;18m£l I, =10A (trip current


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PDF MIC5013 MIC5013
Not Available

Abstract: No abstract text available
Text: capaci­ tor that provides the desired time constant working against RjH 2 and the internal 1k£2


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PDF MIC5013 MIL-STD-883 MIC5010
1999 - DSASW00264742

Abstract: NiH2 battery 1N5816 1N6392 1N5816 diode
Text: heatsink ( RJH ) is 5°C/W, the minimum discharge current required to activate the device would increase


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PDF 1998/Winter Typically15. ESPC-98. DSASW00264742 NiH2 battery 1N5816 1N6392 1N5816 diode
Not Available

Abstract: No abstract text available
Text: through the SL/ADJ pin. (2500)(fo) , Am P/s where Rjh is the Thevenin resistance of the , l voltage and has a Rjh of 18k, which meets both design requirements. Figure 11 b shows the slope


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PDF LT1680 000pF 200kHz LT1270A 60kHz LT1339 LT1370 500kHz, LT1371
lv 5682

Abstract: mar 835 mosfet MAS 560 ag TRANSISTOR D 5702 RD60HUF1 MOSFET, 3077 transistor k 2837
Text: 32.57 31.66 30.77 30.53 29.15 28.38 28.37 26.67 27.28 25.66 25.71 25.54 23.87 24.17 23.78 23.22 22.08


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PDF RD60HUF1 RD60HUF1 lv 5682 mar 835 mosfet MAS 560 ag TRANSISTOR D 5702 MOSFET, 3077 transistor k 2837
Not Available

Abstract: No abstract text available
Text: RTH v ss T t_ vD D DCO Waveform l Vss V rjh = vm - Vss at D CO Transition


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PDF SI9730 Si9730 S-60752-- 05-Apr-99 S2SM735 0017flin
2009 - OPT05

Abstract: 1000 watt mosfet power amplifier 1094/BBM2E3KKO 300 watt mosfet amplifier
Text: (dB) Device Type 3054 3040 3055 3056 3026 7005 7054 3006 3065 3077 GCM3I3JNB


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PDF
2013 - RJK03P7DPA

Abstract: NP109N055PUJ rjh60d7bdpq RJU6052SDPD-E0 NP109N04PUK NP60N055MUK NP75N04YUG rjp65t43 rjh60t04 PS2761B-1
Text: No file text available


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PDF 0000-A PAE-AA-12-0177-1 PAE-AA-12-0049-1 RJK03P7DPA NP109N055PUJ rjh60d7bdpq RJU6052SDPD-E0 NP109N04PUK NP60N055MUK NP75N04YUG rjp65t43 rjh60t04 PS2761B-1
Not Available

Abstract: No abstract text available
Text: off and the external Rweak resistor forms a voltage divider with Rjh e r m -The resulting voltage is , external R nr and Rweak resistors form a voltage divider with Rjh e r m - The resulting voltage is , divider with Rjh e r m The resulting voltage is monitored at RNR, compared to an internal reference and


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PDF LTC1759 10-Bit LT1511 LTC1694 OT-23 LT1769 LT1511 28-Pin
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