The Datasheet Archive

Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
LT1158IN#TR Linear Technology IC HALF BRDG BASED MOSFET DRIVER, PDIP16, 0.300 INCH, PLASTIC, DIP-16, MOSFET Driver
LT1162CN Linear Technology IC 1.5 A FULL BRDG BASED MOSFET DRIVER, PDIP24, 0.300 INCH, PLASTIC, DIP-24, MOSFET Driver
LT1158IS#TR Linear Technology IC 15 A HALF BRDG BASED MOSFET DRIVER, PDSO16, SOIC-16, MOSFET Driver
LT1158IN#TRPBF Linear Technology IC HALF BRDG BASED MOSFET DRIVER, PDIP16, 0.300 INCH, PLASTIC, DIP-16, MOSFET Driver
LT1161CS Linear Technology IC 4 CHANNEL, BUF OR INV BASED MOSFET DRIVER, PDSO20, SO-20, MOSFET Driver
LT1160IS#TR Linear Technology IC 1.5 A HALF BRDG BASED MOSFET DRIVER, PDSO14, 0.150 INCH, PLASTIC, SO-14, MOSFET Driver

MOSFET smd 4407 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
MOSFET 4407 a

Abstract: MOSFET 4407 4406 mosfet 4407 mosfet mosfet 4407 8pin TC4407 c4407 4407E N/IRf 4407 mosfet TC4406
Text: Semiconductor, Inc. leluom TC4406 TC4407 3A DUAL OPEN-DRAIN MOSFET DRIVERS FEATURES , The T C 4406 and T C 4407 are CM O S buffer-drivers constructed with com plem entary M OS outputs, w , pF TELCOM SEMICONDUCTOR, INC. 3-271 3A DUAL OPEN-DRAIN MOSFET DRIVERS TC4406 TC4407 , , INC. 3A DUAL OPEN-DRAIN MOSFET DRIVERS TC4406 TC4407 ELECTRICAL CHARACTERISTICS: S pecifications , V TC 4407 1 3 | I A DOWN 121 1 B U P 111 1 B DOWN 10| 9 IN B I I 5 GNDI GND 1BUP B DOWN


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PDF TC4406 TC4407 V-18V) TC4406 TC4407 MOSFET 4407 a MOSFET 4407 4406 mosfet 4407 mosfet mosfet 4407 8pin c4407 4407E N/IRf 4407 mosfet
1996 - mosfet 4407 8pin

Abstract: MOSFET 4407 a MIC4606 MOSFET 4407 4407 mosfet MIC4607 1800pf IR 4607 MIC4606/4607
Text: MIC4606/4607 Micrel MIC4606/4607 Dual 3A-Peak Open-Drain MOSFET Driver Preliminary Information General Description The MIC4606 and MIC4607 are BiCMOS/DMOS bufferdrivers constructed with , previously-used technique of adding a dioderesistor combination between the driver output and the MOSFET , because , .2kV Applications · · · · · · Motor Controls Self-Commutating MOSFET Bridge Driver Driving Bipolar , current-carrying capacity, multiple MIC4606 or MIC4607s may be paralleled. The MIC4606/ 4407 will not latch under


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PDF MIC4606/4607 MIC4606 MIC4607 1800pF mosfet 4407 8pin MOSFET 4407 a MOSFET 4407 4407 mosfet IR 4607 MIC4606/4607
MOSFET 4407

Abstract: MOSFET 4407 a 4407 mosfet amp 4546 SSR220DIN-DC22 SSR220DIN-AC22 SSR310DIN-DC22 70S2-03-C-25-S SSR230DIN-DC22 70S2-04-B-06-S
Text: 47.74 48.62 50-99 44.07 44.88 100-249 41.51 42.28 The new 6000 Series hockey puck style solid state , . Typical Input Current: AC - 4 mA; DC - 12 mA (SCR), 11 mA ( MOSFET ). Operating Temperature: ­40°C to , Fig. B Fig. C Fig. D VAC SCR VAC MOSFET SPST-NO relays provide 3000 VAC optical isolation from , 39.01 12.85 20.58 18.24 19.58 INDEX 0-60 VDC MOSFET Output, DC Switching (SPST-NO) 70185382 70185383


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PDF SSR310DIN-DC22 SSR320DIN-DC22 SSR330DIN-DC22 MOSFET 4407 MOSFET 4407 a 4407 mosfet amp 4546 SSR220DIN-DC22 SSR220DIN-AC22 70S2-03-C-25-S SSR230DIN-DC22 70S2-04-B-06-S
MOSFET 4407

Abstract: mosfet 4407 8pin MOSFET 4407 a 4407 mosfet 1800pf
Text: MIC4606/4607 Dual 3A-Peak Open-Drain MOSFET Driver Preliminary Information General Description The M IC4606 and MIC4607 are BiCMOS/DM OS bufferdrivers constructed with complem entary MOS outputs, where the drains of the final output totem pole have been left disconnected so individual connections , · · · · · · M otor Controls Self-Comm utating MOSFET Bridge Driver Driving Bipolar Transistors , IC4606 or MIC4607s may be paralleled. The MIC4606/ 4407 will not latch under any conditions within its


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PDF MIC4606/4607 IC4606 MIC4607 1800pF 1800pF MOSFET 4407 mosfet 4407 8pin MOSFET 4407 a 4407 mosfet
MOSFET 4407

Abstract: MOSFET 4407 a irfu420 IRFR4209A IRFR420 TB334
Text: Components to PC Boards" Symbol JEDEC TO-252AA DRAIN 4-407 CAUTION: These devices are sensitive to , 2.5A, Rgs = 18£2, RL = 100£i, VGS=10V MOSFET Switching Times are Essentially Independent of Operating , From the Drain Lead, 6.0mm (0.25in) From Package to Center of Die Modified MOSFET Symbol Showing the , CONDITIONS MIN TYP MAX UNITS Continuous Source to Drain Current 'SD Modified MOSFET Symbol Showing the


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PDF TA17405. IRFR420 O-252AA IRFR420 IRFU420 O-251AA IRFU420 IRFR420, MOSFET 4407 MOSFET 4407 a IRFR4209A TB334
1999 - MOSFET 4407

Abstract: IFR410 4406 mosfet IFU410 IFR-410 MOSFET 4407 a 4404 mosfet 4407 mosfet IRFU410 TB334
Text: ) VDS = 50V, IDS = 0.75A, (Figure 8) VDD = 250V, ID 1.5A, RGS = 24, RL = 167, MOSFET Switching Times , - 2.0 V 130 - 520 ns Modified MOSFET Symbol Showing the Internal Devices , CONDITIONS Modified MOSFET Symbol Showing the Integral Reverse P-N Junction Diode D G S , Melbourne, FL 32902 TEL: (407) 724-7000 FAX: (407) 724-7240 4-407 EUROPE Intersil SA Mercure


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PDF IRFR410, IRFU410 TA17445. MOSFET 4407 IFR410 4406 mosfet IFU410 IFR-410 MOSFET 4407 a 4404 mosfet 4407 mosfet IRFU410 TB334
1999 - MOSFET 4407

Abstract: irfu420 MOSFET 4407 a IRFR420 IRFR4209A TB334
Text: -251AA JEDEC TO-252AA SOURCE DRAIN GATE DRAIN (FLANGE) GATE DRAIN (FLANGE) 4-407 DRAIN , Lead, 6.0mm (0.25in) From Package to Source Bonding Pad Modified MOSFET Symbol Showing the , - - VDD = 250V, ID 2.5A, RGS = 18, RL = 100, VGS = 10V MOSFET Switching Times are , 1.6 V 130 270 540 ns 0.57 D TYP - Modified MOSFET Symbol Showing the


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PDF IRFR420, IRFU420 TA17405. MOSFET 4407 irfu420 MOSFET 4407 a IRFR420 IRFR4209A TB334
MIC4606

Abstract: No abstract text available
Text: com bination between the driver output and the MOSFET , because they allow accurate control of turn-on , / 4407 will not latch under any conditions within its power and voltage ratings. It is not subject to


OCR Scan
PDF MIC4606/4607 MIC4606 IC4607 18tput 1800pF
2011 - NCL30100 D

Abstract: MOSFET 4407 MOSFET 4407 a XC10B5 ncl3001 4407 mosfet NTGS4141NT1G NCL30100 B32021A3222M289 ncl30010
Text: topology is used to control a cost effective N-type MOSFET . Moreover, this controller employs negative , 6 DRV Driver output Output drive for an external power MOSFET A resistor divider consisting of R3 and R4 is used to set the peak current sensed through the MOSFET switch Power ground , total current, this technique does not impact the MOSFET driving voltage (VGS) during switching , : Selection of the external n-channel MOSFET can be easily optimized based on operation voltage, drive


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PDF NCL30100 NCL30100 NCL30100/D NCL30100 D MOSFET 4407 MOSFET 4407 a XC10B5 ncl3001 4407 mosfet NTGS4141NT1G B32021A3222M289 ncl30010
2010 - solar led

Abstract: SOT23-6 marking 658 XC10B5 transistor manual substitution FREE NCL30100 MOSFET 4407 SOD523 1N4148 LED050 MOSFET 4407 a pwm solar charge controller schematic
Text: topology is used to control a cost effective N-type MOSFET . Moreover, this controller employs negative , used to set the peak current sensed through the MOSFET switch Power ground. Capacitor to establish the , Output drive for an external power MOSFET 6 DRV Driver output http://onsemi.com 2 , impact the MOSFET driving voltage (VGS) during switching. Furthermore, the programming resistor together , supports high brightness LED drive current requirements: Selection of the external n-channel MOSFET can be


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PDF NCL30100 NCL30100/D solar led SOT23-6 marking 658 XC10B5 transistor manual substitution FREE MOSFET 4407 SOD523 1N4148 LED050 MOSFET 4407 a pwm solar charge controller schematic
2011 - ic manual substitution FREE

Abstract: NTR4170N
Text: topology is used to control a cost effective N−type MOSFET . Moreover, this controller employs negative , voltage 6 DRV Driver output Output drive for an external power MOSFET A resistor divider consisting of R3 and R4 is used to set the peak current sensed through the MOSFET switch Power ground , : By sensing the total current, this technique does not impact the MOSFET driving voltage (VGS , LED drive current requirements: Selection of the external n−channel MOSFET can be easily optimized


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PDF NCL30100 NCL30100 NCL30100/D ic manual substitution FREE NTR4170N
2010 - MOSFET 4407

Abstract: ncl3001 ncl30100 XC10B5 08053C225KAT MOSFET 4407 a b32021a3222m we-pd4 SOT-363 PWM solar led
Text: topology is used to control a cost effective N-type MOSFET . Moreover, this controller employs negative , Output drive for an external power MOSFET A resistor divider consisting of R3 and R4 is used to set the peak current sensed through the MOSFET switch Power ground. Capacitor to establish the off time , sensing the total current, this technique does not impact the MOSFET driving voltage (VGS) during , requirements: Selection of the external n-channel MOSFET can be easily optimized based on operation voltage


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PDF NCL30100 NCL30100 NCL30100/D MOSFET 4407 ncl3001 XC10B5 08053C225KAT MOSFET 4407 a b32021a3222m we-pd4 SOT-363 PWM solar led
5a6 zener diode

Abstract: dual mosfet dip diode zener 6.2v 1w 10v ZENER DIODE 5A6 smd sot23 DG9415
Text: SOIC-8 SMD SOP-4/SOP-16 Power MOSFET Product Name Si4946BEY Status NEW Description Features Package RDSon=41mOhm@ ID=6.5A, VGS=10V SMD SO-8 N-Channel 60-V (D-S) MOSFET Si7370DP Dual N-Channel 60-V (D-S) 175ºC MOSFET RDSon=11mOhm@ ID=15.8A, VGS=10V Q-Level SMD , =10V SMD PowerPAK® SO-8 Dual N-Channel 60-V (D-S), 175°C MOSFET RDSon=80mOhm@ ID=3.7A, VGS , ; 10nH-1000µH, IDC=30-450mA Q-Level SMD 1812 Power MOSFET Product Name Status Description


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PDF Si4418DY 130mOhm@ Si4420BDY Si6928DQ 35mOhm@ Si6954ADQ 53mOhm@ SiP2800 SUM47N10-24L 24mOhm@ 5a6 zener diode dual mosfet dip diode zener 6.2v 1w 10v ZENER DIODE 5A6 smd sot23 DG9415
Not Available

Abstract: No abstract text available
Text: ) Mosfet plus Schottky Diode rDS(on) = 0.020 Ohm; Qgd=7.3nC SMD SO-8 Si4834BDY Dual N-Ch. mosfet plus Schottky diode; N-Channel; 30-V (D-S); rDS(on) = 0.022 Ohm; Qgd=2.5nC SMD SO , =2.3nC SMD SO-8 Dual N-Channel; 30-V (D-S) MOSFET TrenchFET rDS(on) = 0.021 Ohm; Qgd= 6.6 Q-Level , Package Si4134DY N-Channel; 30-V (D-S) Mosfet rDS(on) = 0.014 Ohm; Qgd=7.3nC SMD SO , Q-Level SMD SO-8 Si4174DY NEW N-Channel; 30-V (D-S) Mosfet TrenchFET rDS(on) = 0.0095 Ohm


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PDF 1N4148WS-V 500mA BAT54A-V 200mA; OT-23 BAT54W-V OD123 BAV99-V OD-323
SiB431EDK

Abstract: No abstract text available
Text: N-Channel 1.2V (G-S) Rated MOSFET VDS = 8 V, ID = 12.2 A rDS(on) = 31 milliohms SMD MICRO FOOT 1.6 , 35 milliohms SMD MICRO FOOT 1.6 x 1.6 Si8441DB NEW P-Channel 1.2-V (G-S) Rated MOSFET , P-Channel 1.2-V (G-S) Rated MOSFET VDS = -20 V, ID = -9.8 A rDS(on) = 84 milliohms SMD MICRO FOOT , 11 milliohms SMD PowerPAK SC-70 SiA417DJ NEW P-Channel 1.2V (G-S) Rated MOSFET VDS = , (G-S) Rated MOSFET VDS = -20 V, ID = 12 A rDS(on) = 30 milliohms SMD PowerPAK SC-70 SiB414DK


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PDF LLP1010-6L LLP75-6L VEMI45AC-HNH VEMI65AC-HCI LLP2513-13L VEMI85AC-HGK LLP1713-9L LLP3313-17L SiB431EDK
Power MOSFET

Abstract: mosfet switch Schottky Diode 40V 2A schottky diode 30v MOSFET
Text: Si5504BDC N- and P-Channel 30-V (D-S) MOSFET n-CH:RDS(on)=0.100Ω@4.5V; SMD p-CH:RDS(on , N-Channel 30-V (D-S) MOSFET RDS(on)=0.0052Ω@10V; RDS(on)=0.0067Ω@4.5V; Qg=21.5nC SMD SO-8 Si4660DY N-Channel 25-V (D-S) MOSFET RDS(on)=0.0058Ω@10V; RDS(on)=0.007Ω@4.5V; Qg=17nC SMD , =14nC SMD PowerPAK 1212-8 Si7114DN N-Channel 30-V (D-S) MOSFET RDS(on)=0.0075Ω@10V; RDS(on)=0.010Ω@4.5V; Qg=12.5nC SMD PowerPAK 1212-8 Si7686DP N-Channel 30-V (D-S) MOSFET RDS(on


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PDF Si4642DY SiE726DF 1-1500uF 47-680uF Power MOSFET mosfet switch Schottky Diode 40V 2A schottky diode 30v MOSFET
IRF32N50k

Abstract: smd diode UF IRF32N50
Text: TH / Radial TO-220AC TH / Radial TO-247 PFC MOSFET Product Name Status Description Features Package IRF32N50K Power MOSFET 500 V, 160 mohm TH / Radial TO-247 IRFPS43N50K Power MOSFET 500 V, 90 mohm Q-Level TH / Radial Super TO-247 Shunt resistor Product Name , SMD 0603-5931 page 4 Uninterruptible Power Supply : AC INPUT SECTION, XY Capacitors Film RFI , 10W SMD 0603-5931 Tantalum Capacitors Product Name Status Description Features


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PDF IRFP32N50K IRFPS40N60K O-247 LPE-3325 IRF32N50k smd diode UF IRF32N50
2011 - SRK2000

Abstract: DIODE C502 SRK2000D AN2644 330 smd ic U501 AN3303 STD95N4F3 stl140n4 STL85N6F3
Text: STS15N4LLF3 N-channel power MOSFET STMicroelectronics SO-8 Q502 R501 10 SMD std film res , MOSFET P/N MOSFET package EVLSRK2000-L-40 STL140N4LLF5 PowerFLATTM 2.75 m 40 V , MOSFET RDS(on) MOSFET BVDSS EVLSRK2000: smart driving control for an LLC resonant converter Doc ID , . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 1.1 Drain MOSFET sensing and , . 14 3.1 Power MOSFET turn-off compensation . . . . . . . . . . . . . . . . . . . . . . . . . .


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PDF AN3303 SRK2000 EVLSRK2000 SRK2000 DIODE C502 SRK2000D AN2644 330 smd ic U501 AN3303 STD95N4F3 stl140n4 STL85N6F3
2011 - diode d502

Abstract: diode Schottky D501
Text: STL85N6F3 N-channel power MOSFET STMicroelectronics PowerFLAT™ R501 10 Ω SMD std film , STS15N4LLF3 N-channel power MOSFET STMicroelectronics SO-8 Q502 R501 10 Ω SMD std film , MOSFET P/N MOSFET package EVLSRK2000-L-40 STL140N4LLF5 PowerFLAT™ 2.75 mΩ 40 V , . September 2011 MOSFET RDS(on) MOSFET BVDSS EVLSRK2000: smart driving control for an LLC resonant , characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 1.1 Drain MOSFET sensing


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PDF AN3303 SRK2000 EVLSRK2000 SRK2000 diode d502 diode Schottky D501
SMD resistors 1806

Abstract: SMD zener diode 202 1N4148WS
Text: P-Channel MOSFET ; for battery protection circuits VDS = -20 V, rDS(on) = 0.030 Ohm; ID = -4.4 A SMD , SMD MICRO FOOT CSP Si8904EDB ESD-protected bidirectional N-Ch. MOSFET for battery protection , ) MOSFET to switch white LED's; rDS(on) = 0.2 ohms; ID = 2.0 A; SMD SC70-6 Si1473DH P-Channel 30-V (D-S) MOSFET to switch white LED's; rDS(on) = 0.10 ohms; ID = 2.7 A; Q-Level SMD , ; VGS= 10V SMD TSOP-6 Si3483CDV NEW P-Channel 30-V (D-S) MOSFET rDS(on) = 0.034 ohms


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PDF HPC0201A HPC0402A HPC0402B/C HPC0603A SMD resistors 1806 SMD zener diode 202 1N4148WS
SCR SMD

Abstract: BC337 SMD n448 ST SMD SCR TSM03WID d3 007 SMD SMD NF VTM UK SMD SCR VTM26
Text: Microelectronics SMD SOT-3 N-Channel enhancement mode MOSFET SMD SOT-3/SOT-3 SMD SOT-3 0.065 W or greater , Note AN:007 N MOSFET 0msec MOSFET U TSM03W VTM 6 55Vdc VTM PC VTM VC SCR U C R8 VTM MOSFET VTM OCP VC VTM Fig.6 VTM BCM U TSM03WID SCR P00BL Q3 IRLL0/BSS3 Q BC87 NPN BC337 SMD SOT-3 D BAV70 SMD SOT-3 (N448 ) D3 BZX84C5 5 V 300 mW SMD SOT-3 D4 BZX84C4 4 V 300 mW SMD SOT


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PDF VTM2655V 55VDC 55VDC V048F60T05 48Vdc 48Vdc, SCR SMD BC337 SMD n448 ST SMD SCR TSM03WID d3 007 SMD SMD NF VTM UK SMD SCR VTM26
3 watt 70v zener diode

Abstract: inkjet print head interface K784P
Text: Features Package Q-Level P+N Channel MOSFET , SMD Id up to 1.2 A, SC70-6 rDSon 0.165 Ω@Vin = , Switching MOSFET NEW 60V/0.24A. Rdson=1.2ohm, Qg = 0.4 Nc SMD SOT-23 N-Channel Small-Signal Switching MOSFET 60V/0.3A. Rdson=1ohm, Qg = 0.4 nC SMD SOT-23 Small-Signal Schottky Diode , MOSFET 40 V/14 A (10sec) ID = 10A (steady state). rDSon=7.5mohm, Qg=18.5nC SMD SO-8 SI7848BDP-T1-E3 N-Channel Switching MOSFET 40V/47A, Rdson=7.4mohm, Qg = 33nC SMD PPAK SO


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PDF 00V-600V; DO-220AA V-540V; V-440V DO-204AL DO-41) DO-204AC DO-15) 3 watt 70v zener diode inkjet print head interface K784P
2002 - schematic diagram 48v dc convertor

Abstract: SMD F5 DIODE powerone 48v rectifier zener diode 3.3v 500mw, philips make smd diode r4a schematic diagram circuit 48V controller schematic diagram 48V telecom ups F1228CT-ND capacitors smd philips 1n4148 SMD
Text: Diode, 100V, 3A Diode, Zener, 11V, 500mW, SMD OPTO ISOLATOR, single OPTO ISOLATOR, quad MOSFET , MOSFET during both the live-insertion and steady state intervals. An abrupt voltage increase on this pin causes the SMH4804 to immediately de-assert the PG# outputs and shutoff the MOSFET gate drive. Adding a , and dynamic, of the N-Channel MOSFET require the addition of a few external components particularly , . This condition can allow the MOSFET to turn on if the bus produces enough gate voltage to exceed the


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PDF SMH4804, SMP9210 SMT4004 10-bit schematic diagram 48v dc convertor SMD F5 DIODE powerone 48v rectifier zener diode 3.3v 500mw, philips make smd diode r4a schematic diagram circuit 48V controller schematic diagram 48V telecom ups F1228CT-ND capacitors smd philips 1n4148 SMD
2008 - SMD Transistor dj rm

Abstract: complementary bipolar transistor driver schematic Z-Power P7 TRANSISTOR SMD mosfet driver cree mc-e driver TRANSISTOR SMD mosfet power 882 smd ZXLD1320 SMD Transistor dj diode smd ed 49
Text: external MOSFET switch Figure 1 and Table 1 show the schematic and bill of materials of 2.8A step down LED , Driver ZXLD1320 Diodes Zetex Q1 MOSFET ZXMN3A04KTC Diodes Zetex Q2 Gate Driver , NIC Coilcraft NIC Murata NIC Murata Murata NCST12FR100FTRF NCST12FR100FTRF SMD 1206 SMD 0805 / 0603 SMD 0805 / 0603 SMD 0805 / 0603 SMD 0805 / 0603 NIC NIC generic generic generic , Barrier Rectifier 10uH 4.1A 10nF 25V X7R SMD 0603 47nF 25V X7R SMD 0603 4.7uF 50V X7R SMD 1206


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PDF ZXLD1320 curre41 SMD Transistor dj rm complementary bipolar transistor driver schematic Z-Power P7 TRANSISTOR SMD mosfet driver cree mc-e driver TRANSISTOR SMD mosfet power 882 smd SMD Transistor dj diode smd ed 49
Not Available

Abstract: No abstract text available
Text: 1.0A SMD Micro SMP SSA34 40V, 3A 0.42V at 3.0A Q-Level SMA Switching MOSFET Product Name Status Si1032X Description N-channel 20V MOSFET VDS = 20V ; ID = 200mA ; rds(on) = 5Ω Features Low threshold (1.5V) Package Q-Level SMD SC89 Transient Voltage , 2200Ω at 100 MHz Features Magnetically self shielded Package Q-Level SMD 0805 Schottky , intensity, Low forward voltage for high pulse current Package Q-Level SMD Reciever Product


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PDF SIS402DN VLMW321 VEMI65AC 240Mhz LLP2513-13L
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