The Datasheet Archive

Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
LT1158IN#TRPBF Linear Technology IC HALF BRDG BASED MOSFET DRIVER, PDIP16, 0.300 INCH, PLASTIC, DIP-16, MOSFET Driver
LT1161CS Linear Technology IC 4 CHANNEL, BUF OR INV BASED MOSFET DRIVER, PDSO20, SO-20, MOSFET Driver
LT1160IS#TR Linear Technology IC 1.5 A HALF BRDG BASED MOSFET DRIVER, PDSO14, 0.150 INCH, PLASTIC, SO-14, MOSFET Driver
LT1158IS Linear Technology IC 15 A HALF BRDG BASED MOSFET DRIVER, PDSO16, PLASTIC, SOL-16, MOSFET Driver
LT1158IS#TR Linear Technology IC 15 A HALF BRDG BASED MOSFET DRIVER, PDSO16, SOIC-16, MOSFET Driver
LT1160IN Linear Technology IC 1.5 A HALF BRDG BASED MOSFET DRIVER, PDIP14, 0.300 INCH, PLASTIC, DIP-14, MOSFET Driver

MOSFET S1A Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2000 - RFD14N05 spice

Abstract: HUF76343 MOSFET S1A HUF75623P3 HRF3205 equivalent RF1K49093 RFP70N06 HRF3205S HRFZ44N HUF75229P3
Text: Power MOSFET SPICE and Thermal Models Power MOSFET Products Features · · · · Sub Circuit , MOSFET Electrical Models Available on the web @ www.intersil.com HRF3205 HRF3205S HRFZ44N HUF75229P3 , RFT2P03L RFT3055LE © Intersil Corporation 2000 Power MOSFET SPICE and Thermal Models Features · , Resistance (ZJC) Representation Power MOSFET Thermal Models Available on the web @ www.intersil.com , Power MOSFET SPICE and Thermal Models SPICE Models LDRAIN DPLCAP DRAIN 2 5 10 RLDRAIN


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PDF HRF3205 HRF3205S HRFZ44N HUF75229P3 HUF75307D3 HUF75307D3S HUF75307P3 HUF75307T3ST HUF75309D3 HUF75309D3S RFD14N05 spice HUF76343 MOSFET S1A HUF75623P3 HRF3205 equivalent RF1K49093 RFP70N06 HRF3205S HRFZ44N HUF75229P3
2000 - IRF540N

Abstract: huf76639p3 MOSFET IRF540n HRF3205 equivalent ITF87056DQT HUF75623P3 rfg75 HRF3205S HRF3205 HUF76343
Text: Power MOSFET SPICE and Thermal Models TM Features · · · · · · · Sub Circuit Approach , Currents Package Inductances Gate Source Resistance Third Quadrant Diode Operation POWER MOSFET , RLD03N06CLE RLP03N06CLE RLP1N08LE © Intersil Corporation 2000 Power MOSFET SPICE and Thermal Models , Thermal Resistance (ZJC) Representation POWER MOSFET THERMAL MODELS Available on the web @ , RFD20N03SM RFP10P03L RFT2P03L © Intersil Corporation 2000 Power MOSFET SPICE and Thermal Models


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PDF HRF3205 HRF3205S HRFZ44N HUF75307D3 HUF75307D3S HUF75307P3 HUF75307T3ST HUF75309D3 HUF75309D3S HUF75309P3 IRF540N huf76639p3 MOSFET IRF540n HRF3205 equivalent ITF87056DQT HUF75623P3 rfg75 HRF3205S HRF3205 HUF76343
1999 - Spice 2 computer models for hexfets

Abstract: pspice high frequency mosfet n mosfet depletion pspice model parameters Sharp amplifier SM30 RFH75N05 datasheet Spice Model for TMOS Power MOSFETs AN1043 Spice Model for TMOS Power MOSFETs press fit rectifier diode AN1043 equivalent subcircuit with power switch
Text: A New PSPICE Subcircuit for the Power MOSFET Featuring Global Temperature Options October 1999 , power MOSFET electrical and for the first time, thermal responses. Excellent agreement is demonstrated between measured and modeled responses including first and third quadrant MOSFET and gate charge , . It is developed to provide black box conformity to the power MOSFET throughout the operating regime , been published to model the power MOSFET [2-10] with varying degrees of success. The more successful


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PDF -55oC 175oC. Spice 2 computer models for hexfets pspice high frequency mosfet n mosfet depletion pspice model parameters Sharp amplifier SM30 RFH75N05 datasheet Spice Model for TMOS Power MOSFETs AN1043 Spice Model for TMOS Power MOSFETs press fit rectifier diode AN1043 equivalent subcircuit with power switch
2001 - Sharp amplifier SM30

Abstract: Spice Model for TMOS Power MOSFETs RFH75N05 datasheet Spice 2 computer models for hexfets NMOS depletion pspice model Hal Ronan AN9210 TRANSFORMER ERL 35 VDMOS DEVICE 298E-3
Text: A New PSPICE Subcircuit for the Power MOSFET Featuring Global Temperature Options TM October , vertical DMOS power MOSFET electrical and for the first time, thermal responses. Excellent agreement is demonstrated between measured and modeled responses including first and third quadrant MOSFET and gate charge , . It is developed to provide black box conformity to the power MOSFET throughout the operating regime , been published to model the power MOSFET [2-10] with varying degrees of success. The more successful


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PDF -55oC 175oC. Sharp amplifier SM30 Spice Model for TMOS Power MOSFETs RFH75N05 datasheet Spice 2 computer models for hexfets NMOS depletion pspice model Hal Ronan AN9210 TRANSFORMER ERL 35 VDMOS DEVICE 298E-3
2002 - Spice 2 computer models for hexfets

Abstract: Spice Model for TMOS Power MOSFETs RFH75N05 datasheet Sharp amplifier SM30 NMOS depletion pspice model Malouyans RFH75N05 n mosfet depletion pspice model parameters AN1043 Spice Model for TMOS Power MOSFETs vertical JFET
Text: A New PSPICE Subcircuit for the Power MOSFET Featuring Global Temperature Options October 1999 , presented. It accurately portrays the vertical DMOS power MOSFET electrical and for the first time, thermal , third quadrant MOSFET and gate charge behavior, body diode effects, breakdown voltage at high and low , MOSFET throughout the operating regime normally traversed by the dictates of most power circuit , supplied libraries. Efforts have been published to model the power MOSFET [2-10] with varying degrees of


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2001 - pspice high frequency mosfet

Abstract: ERL 35 transformer Spice 2 computer models for hexfets Spice Model for TMOS Power MOSFETs RFH75N05 RFH75N05 datasheet Sharp SM30 n mosfet depletion pspice model parameters switch cross reference SM30
Text: A New PSPICE Subcircuit for the Power MOSFET Featuring Global Temperature Options October 1999 , presented. It accurately portrays the vertical DMOS power MOSFET electrical and for the first time, thermal , third quadrant MOSFET and gate charge behavior, body diode effects, breakdown voltage at high and low , MOSFET throughout the operating regime normally traversed by the dictates of most power circuit , supplied libraries. Efforts have been published to model the power MOSFET [2-10] with varying degrees of


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PDF -55oC 175oC. pspice high frequency mosfet ERL 35 transformer Spice 2 computer models for hexfets Spice Model for TMOS Power MOSFETs RFH75N05 RFH75N05 datasheet Sharp SM30 n mosfet depletion pspice model parameters switch cross reference SM30
1992 - n mosfet depletion pspice model parameters

Abstract: Sharp amplifier SM30 NMOS depletion pspice model pspice high frequency mosfet Sharp SM30 RFH75N05 datasheet RFH75N05 P-Channel Depletion Mosfets SM30 n mosfet pspice parameters
Text: SUBCIRCUIT FOR THE POWER MOSFET FEATURING GLOBAL TEMPERATURE OPTIONS Author: William J. Hepp - Harris , power MOSFET electrical and for the first time, thermal responses. Excellent agreement is demonstrated between measured and modeled responses including first and third quadrant MOSFET and gate charge , thermal sub-circuit model capable of providing accurate simulation throughout all of the power MOSFET , included in the supplied libraries. Efforts have been published to model the power MOSFET [2-10] with


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PDF AN9210 ED-17 n mosfet depletion pspice model parameters Sharp amplifier SM30 NMOS depletion pspice model pspice high frequency mosfet Sharp SM30 RFH75N05 datasheet RFH75N05 P-Channel Depletion Mosfets SM30 n mosfet pspice parameters
2009 - KP-69

Abstract: mosfet 30V 18A TO 252 FDD24AN06LA0
Text: FDD24AN06LA0_F085 N-Channel Logic Level PowerTrench® MOSFET 60V, 36A, 24m Features , DRAIN (FLANGE) D GATE G SOURCE TO-252AA S FDD SERIES MOSFET Maximum Ratings TC = 25 , PowerTrench ® MOSFET January 2009 Device Marking Device FDD24AN06LA0_F085 FDD24AN06LA0_F085 , Level PowerTrench® MOSFET Package Marking and Ordering Information 1.2 50 ID, DRAIN CURRENT , . A 3 www.fairchildsemi.com FDD24AN06LA0_F085 N-Channel Logic Level PowerTrench® MOSFET


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PDF FDD24AN06LA0 O-252AA KP-69 mosfet 30V 18A TO 252
2003 - pspice high frequency mosfet

Abstract: pspice self-heating model list transistor Power MOSFET, Fairchild pspice model list transistor Discrete PSPICE: Diode Models PCIM 177 pspice model list FDP038AN06A0 AN-7510 TRANSISTOR S1A 64
Text: , semiconductor devices, simulation, thermal design. Abstract An empirical self-heating SPICE MOSFET model which accurately portrays the vertical DMOS power MOSFET electrical and thermal responses is presented. This macro-model implementation is the culmination of years of evolution in MOSFET modeling. This new version brings together the thermal and the electrical models of a VDMOS MOSFET . The existing electrical , procedure using parametric data is described. Simulation response of the new self-heating MOSFET model


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2003 - mosfet SPICE MODEL

Abstract: self-heating subckt pspice high frequency mosfet parallel mosfet A SPICE II subcircuit representation for power MOSFETs using empirical methods difference between orcad pspice ronan FDP038AN08A0 MOSFET S1A PSPICE Orcad
Text: Application Note 7533 October 2003 A Revised MOSFET Model With Dynamic Temperature , empirical self-heating SPICE MOSFET model which accurately portrays the vertical DMOS power MOSFET , evolution in MOSFET modeling. This new version brings together the thermal and the electrical models of a VDMOS MOSFET . The existing electrical model [2,3] is highly accurate and is recognized in the industry. Simulation response of the new self-heating MOSFET model track the dynamic thermal response and is


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2003 - Dell Latitude csx

Abstract: pspice model list transistor pspice self-heating model list transistor PCIM 177 ronan pspice model list FDB038AN08A0 AN-7510 FDP038AN08A0 FDP038AN06A0
Text: self-heating SPICE MOSFET model which accurately portrays the vertical DMOS power MOSFET electrical and thermal responses is presented. This macro-model implementation is the culmination of years of evolution in MOSFET modeling. This new version brings together the thermal and the electrical models of a VDMOS MOSFET . The , self-heating MOSFET model track the dynamic thermal response and is independent of SPICE's global temperature definition. 1. Introduction Many power MOSFET models available today are based on an ideal lateral MOSFET


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2005 - SOP50

Abstract: A3985 pwm solenoid high-side driver GH-1B A3985SLD-T A3985SLDTR-T Complementary MOSFET Half Bridge MOSFET S1A
Text: turned on and will sink current from the external MOSFET gate circuit to the respective Sxx pin. S1A , A3985 Digitally Programmable Dual Full-Bridge MOSFET Driver Features and Benefits Description , Typical Application 3985-DS, Rev. 3 Digitally Programmable Dual Full-Bridge MOSFET Driver A3985 , current in the external power MOSFET full-bridges is set in 1.56% increments of the maximum value. The , ; www.allegromicro.com 2 Digitally Programmable Dual Full-Bridge MOSFET Driver A3985 Functional Block


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PDF A3985 A3985 SOP50 pwm solenoid high-side driver GH-1B A3985SLD-T A3985SLDTR-T Complementary MOSFET Half Bridge MOSFET S1A
2005 - A3985

Abstract: A3985SLDTR-T A3985SLD-T IPC7351 Mosfet analog switch low voltage low resistance s1a DIODE schottky
Text: will sink current from the external MOSFET gate circuit to the respective Sxx pin. S1A , S1B, S2A, and , A3985 Digitally Programmable Dual Full-Bridge MOSFET Driver Features and Benefits Description , Typical Application 3985-DS Digitally Programmable Dual Full-Bridge MOSFET Driver A3985 , current in the external power MOSFET full-bridges is set in 1.56% increments of the maximum value. The , www.allegromicro.com 2 Digitally Programmable Dual Full-Bridge MOSFET Driver A3985 Functional Block


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PDF A3985 A3985 A3985SLDTR-T A3985SLD-T IPC7351 Mosfet analog switch low voltage low resistance s1a DIODE schottky
2005 - A3985

Abstract: full bridge control mosfet and driver circuit A3985SLDTR-T
Text: turned on and will sink current from the external MOSFET gate circuit to the respective Sxx pin. S1A , A3985 Digitally Programmable Dual Full-Bridge MOSFET Driver Features and Benefits Description , Typical Application 3985-DS, Rev. 4 Digitally Programmable Dual Full-Bridge MOSFET Driver A3985 , current in the external power MOSFET full-bridges is set in 1.56% increments of the maximum value. The , ; www.allegromicro.com 2 Digitally Programmable Dual Full-Bridge MOSFET Driver A3985 Functional Block


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PDF A3985 A3985 full bridge control mosfet and driver circuit A3985SLDTR-T
2005 - Not Available

Abstract: No abstract text available
Text: turned on and will sink current from the external MOSFET gate circuit to the respective Sxx pin. S1A , A3985 Digitally Programmable Dual Full-Bridge MOSFET Driver Description Features and Benefits , 3985-DS, Rev. 4 Digitally Programmable Dual Full-Bridge MOSFET Driver A3985 Description , the external power MOSFET full-bridges is set in 1.56% increments of the maximum value. The , . 1.508.853.5000; www.allegromicro.com 2 Digitally Programmable Dual Full-Bridge MOSFET Driver A3985


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PDF A3985 A3985
2002 - Not Available

Abstract: No abstract text available
Text: FDB035AN06A0 N-Channel PowerTrench® MOSFET 60 V, 80 A, 3.5 mΩ Features Applications â , S S MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS VGS Drain to , o C/W www.fairchildsemi.com FDB035AN06A0 — N-Channel PowerTrench® MOSFET November , FDB035AN06A0 — N-Channel PowerTrench® MOSFET Package Marking and Ordering Information 1.2 250 ID , FDB035AN06A0 — N-Channel PowerTrench® MOSFET Typical Characteristics TC = 25°C unless otherwise noted


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PDF FDB035AN06A0
2010 - TC124E

Abstract: FDB8896 KP350
Text: FDB8896_F085 N-Channel PowerTrench® MOSFET 30V, 93A, 5.7m General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC , converters · Qualified to AEC Q101 · RoHS Compliant ® FDB8896_F085 N-Channel PowerTrench MOSFET July 2010 D GATE G SOURCE TO-263AB FDB SERIES DRAIN (FLANGE) S MOSFET Maximum , COSS - VGS = 0.5V, f = 1MHz CISS FDB8896_F085 N-Channel PowerTrench MOSFET Electrical


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PDF FDB8896 TC124E KP350
2002 - TC2-25

Abstract: 55E-1 NL-11 1e40 FDB2572 771 fairchild
Text: FDP2572 N-Channel PowerTrench ® MOSFET March 2013 FDP2572 N-Channel PowerTrench® MOSFET 150 , FDP2572 150 ±20 29 20 4 Figure 4 36 135 0.9 -55 to 175 Unit V V A A A A mJ W W/oC oC MOSFET Maximum , www.fairchildsemi.com FDP2572 N-Channel PowerTrench ® MOSFET Package Marking and Ordering Information Device , . C0 2 www.fairchildsemi.com FDP2572 N-Channel PowerTrench ® MOSFET Typical , N-Channel PowerTrench ® MOSFET Typical Characteristics TC = 25°C unless otherwise noted 1000 10µs ID


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PDF FDP2572 FDP2572 O-220 TC2-25 55E-1 NL-11 1e40 FDB2572 771 fairchild
2005 - TC275

Abstract: No abstract text available
Text: FDD8878 / FDU8878 N-Channel PowerTrench® MOSFET January 2005 FDD8878 / FDU8878 N-Channel PowerTrench® MOSFET 30V, 40A, 15m Features r DS(ON) = 15m, VGS = 10V, ID = 35A r DS(ON) = 18.5m, VGS = 4.5V , current handling capability General Description This N-Channel MOSFET has been designed specifically , / FDU8878 N-Channel PowerTrench® MOSFET Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol , PowerTrench® MOSFET Dynamic Characteristics CISS COSS CRSS RG Qg(TOT) Qg(5) Qg(TH) Qgs Qgs2 Qgd Input


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PDF FDD8878 FDU8878 O-251AA) O-252 O-252) TC275
2005 - application note gate driver for h bridge mosfet

Abstract: No abstract text available
Text: A3985 Digitally Programmable Dual Full-Bridge MOSFET Driver Features and Benefits Serial , Digitally Programmable Dual Full-Bridge MOSFET Driver are protected from shoot-through by integrated , current in the external power MOSFET full-bridges is set in 1.56% increments of the maximum value. The , A3985 Digitally Programmable Dual Full-Bridge MOSFET Driver Functional Block Diagram +5 V VDD , High-Side Drive GH1B CBOOT1B C1B STR Serial Port GL1B S1B RSENSE1 P P C1A GH1A S1A RGH1A RGH1B


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PDF A3985 application note gate driver for h bridge mosfet
2005 - c 103 mosfet

Abstract: n mosfet pspice parameters FDS8874
Text: FDS8874 N-Channel PowerTrench® MOSFET 30V, 16A, 5.5m Features General Description rDS(ON) = 5.5m, VGS = 10V, ID = 16A This N-Channel MOSFET has been designed specifically to improve the , 8 MOSFET Maximum Ratings 4 1 TA = 25°C unless otherwise noted Symbol VDSS Drain , FDS8874 N-Channel PowerTrench® MOSFET August 2005 Symbol Parameter Test Conditions Min , Rev. A www.fairchildsemi.com FDS8874 N-Channel PowerTrench® MOSFET Electrical Characteristics


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PDF FDS8874 FDS8874 c 103 mosfet n mosfet pspice parameters
2007 - FDS8878

Abstract: FDS8978
Text: FDS8978 N-Channel PowerTrench® MOSFET tm 30V, 7.5A, 18m Features General Description rDS(on) = 18m, VGS = 10V, ID = 7.5A This N-Channel MOSFET has been designed specifically to , Q2 G2 3 7 D1 G2 6 D1 D1 4 5 D2 D1 S1 MOSFET Maximum Ratings , FDS8978 Dual N-Channel PowerTrench® MOSFET May 2007 Symbol Parameter Test Conditions Min , www.fairchildsemi.com FDS8978 Dual N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25°C unless


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PDF FDS8978 FDS8978 FDS8878
2004 - Not Available

Abstract: No abstract text available
Text: FDW2512NZ Dual N-Channel 2.5V Specified PowerTrench® MOSFET Features ! 6A, 20V General Description rDS(ON) = 0.028Ω, VGS = 4.5V This N-Channel MOSFET is produced using Fairchild , ® MOSFET December 2004 Symbol VDSS Drain to Source Voltage Ratings 20 Units V VGS , Specified PowerTrench® MOSFET FDW2512NZ Dual N-Channel 2.5V Specified PowerTrench® MOSFET Absolute , FDW2512NZ Dual N-Channel 2.5V Specified PowerTrench® MOSFET FDW2512NZ Dual N-Channel 2.5V Specified


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PDF FDW2512NZ FDW2512NZ
2005 - FDS8870

Abstract: No abstract text available
Text: FDS8870 N-Channel PowerTrench® MOSFET 30V, 18A, 4.2m Features General Description r DS(ON) = 4.2m, VGS = 10V, ID = 18A This N-Channel MOSFET has been designed specifically to improve the , Corporation FDS8870 Rev. A1 1 www.fairchildsemi.com FDS8870 N-Channel PowerTrench® MOSFET , nC www.fairchildsemi.com FDS8870 N-Channel PowerTrench® MOSFET MOSFET Maximum Ratings TA = , PowerTrench® MOSFET Switching Characteristics (VGS = 10V) 1.2 20 ID, DRAIN CURRENT (A) POWER


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PDF FDS8870 FDS8870
2005 - FDS5672

Abstract: FDM3622
Text: FDS5672 N-Channel PowerTrench® MOSFET 60V, 12A, 10m General Description Features rDS(ON) = 10m VGS = 10V, ID = 12A , This N-Channel MOSFET has been designed specifically to improve the , Corporation FDS5672 Rev. A 1 www.fairchildsemi.com FDS5672 N-Channel PowerTrench® MOSFET July , FDS5672 N-Channel PowerTrench® MOSFET MOSFET Maximum Ratings TC = 25°C unless otherwise noted tON , FDS5672 N-Channel PowerTrench® MOSFET Resistive Switching Characteristics (VGS = 10V) 1.2 15


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PDF FDS5672 FDS5672 FDM3622
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