The Datasheet Archive

Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
LT1158IN#TR Linear Technology IC HALF BRDG BASED MOSFET DRIVER, PDIP16, 0.300 INCH, PLASTIC, DIP-16, MOSFET Driver
LT1162CN Linear Technology IC 1.5 A FULL BRDG BASED MOSFET DRIVER, PDIP24, 0.300 INCH, PLASTIC, DIP-24, MOSFET Driver
LT1158IS#TR Linear Technology IC 15 A HALF BRDG BASED MOSFET DRIVER, PDSO16, SOIC-16, MOSFET Driver
LT1158IN#TRPBF Linear Technology IC HALF BRDG BASED MOSFET DRIVER, PDIP16, 0.300 INCH, PLASTIC, DIP-16, MOSFET Driver
LT1161CS Linear Technology IC 4 CHANNEL, BUF OR INV BASED MOSFET DRIVER, PDSO20, SO-20, MOSFET Driver
LT1160IS#TR Linear Technology IC 1.5 A HALF BRDG BASED MOSFET DRIVER, PDSO14, 0.150 INCH, PLASTIC, SO-14, MOSFET Driver

MOSFET N-CH 200V Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2005 - push-pull converter 80V output

Abstract: TL431 2.5V 220PF-630V MIC3809 CTX04-16236-X2 M9999-080404 MIC3808 MOSFET N-CH 200V 72V DC to 12V dC converter circuit diagram VJ0805Y332KXAAT
Text: 1 MOSFET , Nch 200V , 90mohm (6) or R4 2 Vishay FMMT493 MMBTA55 Qty. (6 , 2005 M9999-080404 (408) 955-1690 Micrel MIC3809 Evaluation Board MOSFET is off, thereby preventing current from flowing through the other. VDS across the off MOSFET is equal to twice the input , from VDD, which supplies power to the MOSFET gate drive circuit. Figure 3 Current Sense and Slope , illustrate the MOSFET drain-source voltages and drain currents. When one of the primary MOSFETs is on


Original
PDF MIC3809 MIC3808 MIC3808/9 M9999-080404 push-pull converter 80V output TL431 2.5V 220PF-630V CTX04-16236-X2 M9999-080404 MOSFET N-CH 200V 72V DC to 12V dC converter circuit diagram VJ0805Y332KXAAT
2009 - MOSFET N-CH 200V

Abstract: MF72-060D5 RF071M2STR mf72 CRCW2512330RJNEG SCHEMATIC dimmer lm3445 GRM31CR72A105KA01 Kemet x7r Ceramic Capacitor -surface .22uF 50V grm188r71c474ka88
Text: N-CHANNEL 100V SOT323 Diodes Inc BSS123W-7-F Q7 MOSFET N-CH 200V POWERPAK 8-SOIC Vishay , pin. Connect a resistor from main switching MOSFET source, ISNS to GND to set the maximum LED current. 8 GATE Power MOSFET driver pin. This output provides the gate drive for the power switching MOSFET of the buck controller. 9 VCC 10 BLDR Input voltage pin. This pin provides the , BZX84C15LT1G D2, D3, D5, D6, D7 DIODE FAST REC 200V 1A Rohm Semiconductor RF071M2STR D4 DIODE


Original
PDF LM3445 LM3445 90VAC 135VAC AN-1978 MOSFET N-CH 200V MF72-060D5 RF071M2STR mf72 CRCW2512330RJNEG SCHEMATIC dimmer GRM31CR72A105KA01 Kemet x7r Ceramic Capacitor -surface .22uF 50V grm188r71c474ka88
2009 - lm3445

Abstract: MOSFET N-CH 200V RF071M2STR br1 BRIDGE National Electronics MSS1260 HI1206T161R-10 HD04-T AN-1978 dale fuse
Text: N-CHANNEL 100V SOT323 Diodes Inc BSS123W-7-F Q7 MOSFET N-CH 200V POWERPAK 8-SOIC Vishay , LED current sense pin. Connect a resistor from main switching MOSFET source, ISNS to GND to set the maximum LED current. 8 GATE Power MOSFET driver pin. This output provides the gate drive for the power switching MOSFET of the buck controller. 9 VCC 10 BLDR Input voltage pin. This pin , BZX84C15LT1G D2, D3, D5, D6, D7 DIODE FAST REC 200V 1A Rohm Semiconductor RF071M2STR D4 DIODE


Original
PDF LM3445 LM3445 90VAC 135VAC AN-1978 MOSFET N-CH 200V RF071M2STR br1 BRIDGE National Electronics MSS1260 HI1206T161R-10 HD04-T AN-1978 dale fuse
2009 - application note LM3445

Abstract: murs120-13-f GRM188R71C474K MOSFET N-CH 200V GRM188R71C474KA GCM1885C LM3445 HI1206T161
Text: N-CHANNEL 100V SOT323 MOSFET N-CH 200V POWERPAK 8-SOIC TRANS PNP LP 100MA 30V SOT23 330ohm 2512 5% Resistor , switching MOSFET source, ISNS to GND to set the maximum LED current. Power MOSFET driver pin. This output provides the gate drive for the power switching MOSFET of the buck controller. Input voltage pin. This pin , , X7R, 16V, 10% Ceramic, 330pF 100V C0G 0603 DIODE ZENER 225MW 15V SOT23 DIODE FAST REC 200V 1A DIODE SWITCH SS DUAL 70V SOT323 DIODE SUPER FAST 200V 1A SMB FUSE 1A 125V FAST Conn, Term Block 2POS INDUCTOR


Original
PDF LM3445 LM3445 120VAC SNVA401F 90VAC 135VAC application note LM3445 murs120-13-f GRM188R71C474K MOSFET N-CH 200V GRM188R71C474KA GCM1885C HI1206T161
2011 - Light Dimmer 800 watt with Schematic

Abstract: zero crossing dimmer zigbee 2250u busch dimmer Voltech dimmer 2250u light dimmer working circuit using triac 3 volt dimmer circuit 220 volt dimmer circuit TMK316B7106KL-TD 1210 LED
Text: , Filter Choke, 1mH, ±10%, 6 mm Dia MOSFET , N-ch , 200V , 600mA, 2.2 Ohms, TSOP-6 MOSFET , N-ch, 600V, 0.3A, 11.5 Ohms, TO-92 MOSFET , N-ch, 800V, 2.5A, 4.5 Ohms, DPAK Resistor, Chip, 7.5k, 1/10W, ±1%, 0805 , , 4.7 µF, 200V , -40 to +105°C, ±20%, 8.00 mm Dia Capacitor, Ceramic, 10 µF, 25V, X7R, ±10%, 1206


Original
PDF SLUU523 TPS92070EVM-648 TPS92070 Light Dimmer 800 watt with Schematic zero crossing dimmer zigbee 2250u busch dimmer Voltech dimmer 2250u light dimmer working circuit using triac 3 volt dimmer circuit 220 volt dimmer circuit TMK316B7106KL-TD 1210 LED
2014 - Not Available

Abstract: No abstract text available
Text: , 5.08mm 2POS Terminal Block 1715721 Phoenix Contact Q1 1 200V MOSFET , N-CH , 200V , 0.6A TSOP-6 IRF5801TRPBF International Rectifier Q2 1 600V MOSFET , N-CH, 600V, 2A , Part Number MFR C1 1 680pF CAP, CERM, 680pF, 200V , +/-10%, X7R 0805 , EPCOS Inc C4 1 22µF CAP, Alum, 22µF, 200V , +/-20% 10x20mm UPW2D220MPD Nichicon , 200V Diode, Switching, 200V , 0.2A SOT-23 BAS21-7-F Diodes Inc. Cool White LED, Cool


Original
PDF TPS92410EVM-002 SLVUA46
2014 - Not Available

Abstract: No abstract text available
Text: MOSFET , 100V Vishay Intertechnology, Inc. SIS890DN-T1-GE3 1 Q2 MOSFET N-Ch . 200V 15.2A , coupled inductor has a 2:1 ratio. The secondary MOSFET has a 200V maximum VDS rating. The default , maximum). The primary side MOSFET has a maximum VDS rating of 100V. Users should be cautious that this , GND VIN FIGURE 2-2: Applying Power to the Board. CAUTION The Primary side MOSFET is Rated to 100V. The transformer turns ratio is 1:2. Do Not exceed the 100V MOSFET Rating. Primary MOSFET


Original
PDF MCP19114 DS50002255A
IRF9210

Abstract: darlington NPN 600V 8a transistor fet 10a 600v transistor IRF9640 darlington NPN 600V 12a transistor 600v 12A TO220F N-CH POWER MOSFET TO-92 KSH117-1 transistor irf620 NPN Transistor 600V 5A TO-220
Text: 93 93 96 96 100 100 98 98 102 102 104 104 TR : Transistor, L I : Linear, FET : MOSFET , MPR , : Linear, F E T : MOSFET , MPR : Microprocessor Peripherals, T&R : Tape & Reel * See Supplement 1 POWER MOSFET Standard MOSFET PART NO. 2N7000 IRF510 IRF511 IRF512 IRF513 IRF520 IRF521 IRF522 IRF523 IRF530 , IRF540 FET, 100V, 1.50R, 3.3A, 43W, N-CH, TO-220 USE IRF610 USE IRF610 USE IRF610 FET, 200V , 0.8R, 5A , FET, 200V , 0.40R, 9.0A, 75W, N-CH, TO-220 USE IRF630 USE IRF630 USE IRF630 FET, 200V , 0.18R, 18.0A


OCR Scan
PDF 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 IRF9210 darlington NPN 600V 8a transistor fet 10a 600v transistor IRF9640 darlington NPN 600V 12a transistor 600v 12A TO220F N-CH POWER MOSFET TO-92 KSH117-1 transistor irf620 NPN Transistor 600V 5A TO-220
IFRZ44

Abstract: IRFZ43 KA3842D irf510 switch TRANSISTOR MC7805CT Transistor mc7812ct KA336Z IRFZ44 PNP high voltage pnp transistor 700v KS82C670N
Text: , 60V, 0.5A, TO-92 MPSA42 TR, NPN, HI-VOLT, 300V, 0.5A, TO-92 MPSA43 TR, NPN. HI-VOLT. 200V . 0.5A. TO , IRF612 IRF613 FET, 200V ,1.50R, 3.3A, 43W, N-CH, TO-220 USE IRF610 USE IRF610 USE IRF610 IRF624 , , 200V , 0.40R, 9.0A, 75W, N-CH, T0-220 USE IRF630 USE IRF630 USE IRF630 IRF640 IRF641 IRF642 IRF643 FET, 200V ,0.18R, 18.0A, 125W, N-CH, T0-220 USE IRF640 USE IRF640 USE IRF640 IRF644 FET, 250V, 0.28R, 14A, 125W, N-CH, T0-220 USE IRF644 IRF645 TR: Transistor, LI: Linear, FET: MOSFET , MPR


OCR Scan
PDF 2N3904 2N3906 2N4400 2N4401 2N4402 2N4403 2N5087 2NS088 2NS551 2N6S15 IFRZ44 IRFZ43 KA3842D irf510 switch TRANSISTOR MC7805CT Transistor mc7812ct KA336Z IRFZ44 PNP high voltage pnp transistor 700v KS82C670N
Quasi-resonant Converter for induction cooker

Abstract: IGBT 60A spice model 1000V igbt dc to dc buck converter CAR IGNITION WITH IGBTS 10 kw schematic induction heating Quasi-resonant Converter induction cooker applications FQPF18N50 1 kw schematic induction heating 600V igbt dc to dc buck converter pwm igbt based ac-dc converter
Text: module) for 1020A appliance motor control . . Page 4 Interface & Logic P-Channel MOSFET BGAs , Power Transistors Discrete Dual N-Channel and Dual P-Channel MOSFET BGAs . . . Page 2 Analog new products Summer - 2002 FREE literature MOSFET BGA Design Guide contains information about , Semiconductor Discrete Power Solutions Newsletter Dual N- and dual P-channel MOSFET BGAs combine small , Fairchild has introduced two new dual Nchannel and two new dual P-channel 20V MOSFET BGA (ball grid array


Original
PDF Semiconducto01 Quasi-resonant Converter for induction cooker IGBT 60A spice model 1000V igbt dc to dc buck converter CAR IGNITION WITH IGBTS 10 kw schematic induction heating Quasi-resonant Converter induction cooker applications FQPF18N50 1 kw schematic induction heating 600V igbt dc to dc buck converter pwm igbt based ac-dc converter
MMBD2104

Abstract: Transistor NEC 05F hp2835 diode ZENER DIODE t2d what is the equivalent of ZTX 458 transistor MMBD2103 T2D DIODE 3w T2D 8N 2n2222 as equivalent for bfr96 mmbf4932
Text: 33 300mW zener 33V 1W zener npn/pnp 22k+47k bias res dual ca Si diode 200V 100mA n-ch mosfet 1.3A 20V , BC846A Phi ITT N BC546A FMMT3904 Zet N 2N3904 MMBT3904 Mot N 2N3904 IRLML2402 IR F n-ch mosfet 20V 0.9A , diode 2N2369 n-ch mosfet 80V 175mA npn RF MRF571 50V 100mA npn sw + 10k base res DC-8GHz MMIC amp 16dB , zener Si diode 200V 100mA 11V 0.3W zener 11V 1W zener npn/pnp 22k+22k bias res npn + res npn + res Si diode 200V 100mA dual ca 12V 0.3W zener dual series RF schottky15V 20mA 12V 0.3W zener 12V 1W zener


Original
PDF BAS32, BAS45, BAV105 LL4148, LL4448 BB241 BB249 LL914 LL4150, MMBD2104 Transistor NEC 05F hp2835 diode ZENER DIODE t2d what is the equivalent of ZTX 458 transistor MMBD2103 T2D DIODE 3w T2D 8N 2n2222 as equivalent for bfr96 mmbf4932
2004 - P-Channel mosfet 400v

Abstract: IRF7101
Text: PD - 95296 IRF7317PbF HEXFET® Power MOSFET Generation V Technology Ultra Low On-Resistance l Dual N and P Channel MOSFET l Surface Mount l Fully Avalanche Rated l Lead-Free Description l l S1 N-CHANNEL MOSFET 1 8 G1 2 7 D1 S2 3 6 D2 4 5 D2 G2 P-CHANNEL MOSFET Fifth Generation HEXFETs from International Rectifier utilize advanced processing , 2.70V 2.00V BOTTOM 1.50V I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A


Original
PDF IRF7317PbF EIA-481 EIA-541. P-Channel mosfet 400v IRF7101
MMBD2103

Abstract: ZENER DIODE t2d MMBD2101 MMBD2102 MMBD2104 SMD codes bc107 TRANSISTOR SMD CODE PACKAGE SOT23 Transistor NEC 05F NDS358N BAT15-115S
Text: /pnp dtr 22k+47k dual ca Si diode 200V 100mA n-ch mosfet 1.3A 20V 3.3V 300mW zener 3.3V 300mW zener , IR F n-ch mosfet 20V 0.9A This has been a problem in the past, however recently manufacturers have , modamp mosfet n-ch npn o/p p-ch pin pkg pnp prot res s ser Si substr sw Vce Vcc junction field effect , mosfet gate) resistor source series silicon substrate switch or switching collector - emitter voltage , -8GHz MMIC amp 12dB gain PAD-10 10pA leakage diode 2N2369 n-ch mosfet 80V 175mA npn RF MRF571 50V 100mA npn


Original
PDF BZV49 BZV55 500mW BAS32, BAS45, BAV105 LL4148, LL4448 BB241 BB249 MMBD2103 ZENER DIODE t2d MMBD2101 MMBD2102 MMBD2104 SMD codes bc107 TRANSISTOR SMD CODE PACKAGE SOT23 Transistor NEC 05F NDS358N BAT15-115S
SMD Codes

Abstract: TRANSISTOR SMD T1P BAW92 MMBD2104 schottky diode s6 81A smd transistor A6a a4s smd transistor transistor SMD P2F Transistor SMD a7s MMBD2101
Text: IR F n-ch mosfet 20V 0.9A This has been a problem in the past, however recently manufacturers have , effect transistor maximum available gain maximum min mmic modamp mosfet n-ch npn o/p p-ch pin pkg pnp , mosfet gate) resistor source series silicon substrate switch or switching collector - emitter voltage , 4k7+4k7 pnp dtr 4k7+4k7 DC-8GHz MMIC amp 12dB gain PAD-10 10pA leakage diode 2N2369 n-ch mosfet 80V 175mA , dual ca 11V 0.3W zener Si diode 200V 100mA 11V 0.3W zener 11V 1W zener npn/pnp dtr 22k+22k pnp dtr


Original
PDF BZV49 BZV55 500mW BAS32, BAS45, BAV105 LL4148, LL4448 BB241 BB249 SMD Codes TRANSISTOR SMD T1P BAW92 MMBD2104 schottky diode s6 81A smd transistor A6a a4s smd transistor transistor SMD P2F Transistor SMD a7s MMBD2101
smd code book

Abstract: transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes
Text: M M M M M M M C C C O C C C O N SOT23 SOT23 dual ca Si diode 200V 100mA n-ch mosfet 1.3A 20V , mosfet MOSIC 5V uhf tv tuners biased dg mosfet MOSIC 5V uhf tv tuners pnp 200V 0.3A BC327-16 BC327 , PAD-10 10pA leakage diode 2N2369 n-ch mosfet 80V 175mA npn RF MRF571 zener 200mW 2.0V 50V 100mA npn sw , jfet J111 pnp dtr dual ca 11V 0.3W zener Si diode 200V 100mA 11V 0.3W zener 11V 1W zener npn/pnp dtr , npn dtr Si diode 200V 100mA 2SC3587 BA277 BB669 MRF9411L 1PS59SB10 PZM10NB2A PZM10NB BZV49-C10


Original
PDF OD-80 OD123/323 OT-23, OT346 OT-323, OT-416 OT-223, OT-89 OT-143, OT-363 smd code book transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes
2007 - 220V ac to 12V dc circuit diagram

Abstract: power supply 220v- 12v circuit diagram power supply 220v 12v diagram POWER SUPPLY 220V AC TO 12v ultrasonic piezoelectric transducer driver 220v to 12v power supply switching circuit 220v to 5v power supply switching circuit diagram ultrasonic piezoelectric 10MHz ultrasound transducer 50MHz ultrasonic ranger
Text: performance High density integration ultrasound transmitter Bipolar ±100V or unipolar 0 to 200V output voltage , HV739 is a single channel monolithic 200V 3.0A high-speed pulser. It is designed for NDT and medical , of controller logic interface circuit, voltage level translators, MOSFET gate drives and high current , to provide output peak currents over 3.3A with up to 200V swing. The P- and Nchannel power FETs gate , +100V, VNN = -100V,TA= 25°C) Output P-Channel MOSFET , TXP Sym IOUT RON COSS Parameter Output


Original
PDF HV739 10MHz MO-220, DSFP-HV748 NR072007 220V ac to 12V dc circuit diagram power supply 220v- 12v circuit diagram power supply 220v 12v diagram POWER SUPPLY 220V AC TO 12v ultrasonic piezoelectric transducer driver 220v to 12v power supply switching circuit 220v to 5v power supply switching circuit diagram ultrasonic piezoelectric 10MHz ultrasound transducer 50MHz ultrasonic ranger
2007 - power supply 220v 12v diagram

Abstract: ultrasonic piezoelectric transducer driver ultrasonic ranger 220v to 12v power supply switching circuit ultrasound transducer 50MHz 220V ac to 12V dc circuit diagram 12VC2 ultrasound pulser ic sonar transmitter ultrasonic piezoelectric transducer for ndt
Text: The Supertex HV739 is a single channel monolithic 200V 3.0A high-speed pulser. It is designed for NDT , transmitter Bipolar ±100V or unipolar 0 to 200V output voltage ±3A source and sink peak current Up to 10MHz , , MOSFET gate drives and high current power P-channel and N-channel power MOSFETs as the output stage , 200V swing. The P- and Nchannel power FETs gate drivers are supplied by two floating 10 to 12VDC power , MOSFET , TXP Sym Parameter Min Typ Max Units Conditions IOUT Output saturation


Original
PDF HV739 HV739 10MHz MO-220, DSFP-HV748 NR081007 power supply 220v 12v diagram ultrasonic piezoelectric transducer driver ultrasonic ranger 220v to 12v power supply switching circuit ultrasound transducer 50MHz 220V ac to 12V dc circuit diagram 12VC2 ultrasound pulser ic sonar transmitter ultrasonic piezoelectric transducer for ndt
2003 - STS1C1S250

Abstract: P-Channel MOSFET 120v dual zener diode 10v MOSFET N-CH 200V
Text: STS1C1S250 N-CHANNEL 250V - 0.9 - 0.75A SO-8 P-CHANNEL 250V - 2.1 - 0.6A SO-8 MESH OVERLAY POWER MOSFET TYPE STS1C1S250(N-Channel) STS1C1S250(P-Channel) s s s s VDSS RDS(on) ID 250 V 250 V <1.4 <2.8 0.80 A 0.60 A TYPICAL RDS(on) (N-Channel) = 0.9 TYPICAL RDS(on , n-ch p-ch 11 22 ns ns N-CHANNEL VDD = 200V , ID=1.5A, VGS = 10V P-CHANNEL VDD = 200V , ID , P-CHANNEL VDD = 200V , ID = 1.5A, RG = 4.7, VGS = 10V (see test circuit, Figure 5) Min. n-ch p-ch


Original
PDF STS1C1S250 STS1C1S250 P-Channel MOSFET 120v dual zener diode 10v MOSFET N-CH 200V
2003 - STS1C1S250

Abstract: Zener Diode B1 9
Text: STS1C1S250 N-CHANNEL 250V - 0.9 - 0.75A SO-8 P-CHANNEL 250V - 2.1 - 0.6A SO-8 MESH OVERLAY POWER MOSFET TYPE STS1C1S250(N-Channel) STS1C1S250(P-Channel) s s s s VDSS RDS(on) ID 250 V 250 V <1.4 <2.8 0.80 A 0.60 A TYPICAL RDS(on) (N-Channel) = 0.9 TYPICAL RDS(on , VDD = 200V , ID=1.5A, VGS = 10V P-CHANNEL VDD = 200V , ID= 1.5A, VGS = 10V n-ch p-ch n-ch p-ch , N-CHANNEL VDD = 125V, ID = 1.5A, RG = 4.7, VGS = 10V P-CHANNEL VDD = 200V , ID = 1.5A, RG = 4.7, VGS =


Original
PDF STS1C1S250 STS1C1S250 Zener Diode B1 9
2002 - NCP4115

Abstract: NCP4100 200v npn 3a d2pak NCP1450 Bipolar Power Transistor Data NCP1650 12V to 300V dc dc converter step-up 400V igbt dc to dc buck converter NCP1204 DL135
Text: ) DEVICE NTB30N20, T4 NTB35N15, T4 NTB52N10, T4 NTMD3N08LR2 NTY100N10 DESCRIPTION N-Ch MOSFET , 200V , 81m @ , DESCRIPTION Fast 3 A LDO Regulator OUTPUT CURRENT 3A PACKAGE AVAILABILITY D2PAK Jul-02 Drivers: MOSFET /IGBT Driver DEVICE NCP5351 DESCRIPTION MOSFET Driver PACKAGE AVAILABILITY SO-8 Sep-02 Op Amps DEVICE , , 2A, 200V Ultrafast Rectifier, 2A, 300V Ultrafast Rectifier, 2A, 400V Ultrafast Rectifier, 2A, 600V 1 , MOSFETs (<60V) DESCRIPTION P-Ch MOSFET , 20 V, 85 m @ 4.5 V N-Ch MOSFET , Temp Sense, 40 V, 20 m @ 5.0 V


Original
PDF SGD503/D NCP1450 NCP1550 CS5211 CS5212 NCP1570 NCP1571 200ve r14525 ONS80126-10 NCP4115 NCP4100 200v npn 3a d2pak Bipolar Power Transistor Data NCP1650 12V to 300V dc dc converter step-up 400V igbt dc to dc buck converter NCP1204 DL135
IRF7317

Abstract: No abstract text available
Text: IRF7317 PRELIMINARY HEXFET® Power MOSFET l l l l l Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated S1 G1 S2 G2 N -C H A N , N-Channel 100 100 VGS 7.50V 4.50V 4.00V 3.50V 3.00V 2.70V 2.00V BOTTOM 1.50V I D , 2.00V BOTTOM 1.50V TOP TOP 10 1.50V 10 1.50V 20µs PULSE WIDTH TJ = 25 °C 1 0.1 , -3.50V -3.00V -2.70V - 2.00V BOTTOM -1.50V -I D , Drain-to-Source Current (A) -I D


Original
PDF IRF7317 1568B IRF7317 EIA-48 IA-541.
irf7317

Abstract: No abstract text available
Text: PD - 9.1568B IRF7317 PRELIMINARY HEXFET® Power MOSFET l l l l l Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated S1 , 2.00V BOTTOM 1.50V I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) VGS 7.50V 4.50V 4.00V 3.50V 3.00V 2.70V 2.00V BOTTOM 1.50V TOP TOP 10 1.50V 10 1.50V , IRF7317 100 P-Channel 100 VGS -7.50V -4.50V -4.00V -3.50V -3.00V -2.70V - 2.00V BOTTOM


Original
PDF 1568B IRF7317 EIA-48 IA-541. irf7317
1997 - IRF7317

Abstract: MS-012AA
Text: PD - 9.1568B IRF7317 PRELIMINARY HEXFET® Power MOSFET l l l l l Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated S1 , N-Channel 100 100 VGS 7.50V 4.50V 4.00V 3.50V 3.00V 2.70V 2.00V BOTTOM 1.50V I D , 2.00V BOTTOM 1.50V TOP TOP 10 1.50V 10 1.50V 20µs PULSE WIDTH TJ = 25 °C 1 0.1 , -3.50V -3.00V -2.70V - 2.00V BOTTOM -1.50V -I D , Drain-to-Source Current (A) -I D


Original
PDF 1568B IRF7317 EIA-48 IA-541. IRF7317 MS-012AA
2010 - ultrasonic piezoelectric transducer driver

Abstract: ultrasonic piezoelectric 10MHz sonar tr switch power supply 220v 12v diagram ultrasound transducer circuit driver ultrasonic transducer circuit ultrasound sonar function of logic pulser Ultrasonic Transducer Ultrasonic FLOW Transducer
Text: 200V output voltage ±3.0A source and sink peak current Up to 10MHz operation frequency Matched delay , Description The Supertex HV739 is a single channel monolithic 200V 3.0A high-speed pulser. It is designed , translators, MOSFET gate drives and high current power P-channel and N-channel power MOSFETs as the output , output peak currents over 3.3A with up to 200V swing. The P- and Nchannel power FETs gate drivers are , , VNN = -100V,TA= 25°C) Output P-Channel MOSFET , TXP Sym Parameter Min Typ Max Units


Original
PDF HV739 10MHz HV739 DSFP-HV739 B052710 ultrasonic piezoelectric transducer driver ultrasonic piezoelectric 10MHz sonar tr switch power supply 220v 12v diagram ultrasound transducer circuit driver ultrasonic transducer circuit ultrasound sonar function of logic pulser Ultrasonic Transducer Ultrasonic FLOW Transducer
2008 - sonar tr switch

Abstract: ultrasonic piezoelectric 10MHz medical ultrasound sensor circuit A1028
Text: performance High density integration ultrasound transmitter Bipolar ±100V or unipolar 0 to 200V output voltage , HV739 is a single channel monolithic 200V 3.0A high-speed pulser. It is designed for NDT and medical , of controller logic interface circuit, voltage level translators, MOSFET gate drives and high current , to provide output peak currents over 3.3A with up to 200V swing. The P- and Nchannel power FETs gate , all TX outputs will be HiZ. DC Electrical Characteristics Output P-Channel MOSFET , TXP Sym IOUT


Original
PDF HV739 10MHz DSFP-HV739 A102808 sonar tr switch ultrasonic piezoelectric 10MHz medical ultrasound sensor circuit A1028
Supplyframe Tracking Pixel