The Datasheet Archive

Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
LT1158IN#TR Linear Technology IC HALF BRDG BASED MOSFET DRIVER, PDIP16, 0.300 INCH, PLASTIC, DIP-16, MOSFET Driver
LT1162CN Linear Technology IC 1.5 A FULL BRDG BASED MOSFET DRIVER, PDIP24, 0.300 INCH, PLASTIC, DIP-24, MOSFET Driver
LT1158IS#TR Linear Technology IC 15 A HALF BRDG BASED MOSFET DRIVER, PDSO16, SOIC-16, MOSFET Driver
LT1158IN#TRPBF Linear Technology IC HALF BRDG BASED MOSFET DRIVER, PDIP16, 0.300 INCH, PLASTIC, DIP-16, MOSFET Driver
LT1161CS Linear Technology IC 4 CHANNEL, BUF OR INV BASED MOSFET DRIVER, PDSO20, SO-20, MOSFET Driver
LT1160IS#TR Linear Technology IC 1.5 A HALF BRDG BASED MOSFET DRIVER, PDSO14, 0.150 INCH, PLASTIC, SO-14, MOSFET Driver

MOSFET MARKING ZA Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2002 - 2N7000BU

Abstract: 2N7000BU/2N7000TA
Text: 2N7000BU / 2N7000TA Advanced Small-Signal MOSFET Features Description • • • • â , , low-current applications, such as small servo motor control, power MOSFET gate drivers, and other switching , Ordering Information Part Number Marking Package Packing Method 2N7000BU 2N7000 TO-92 3L , / 2N7000TA Rev. 1.1.0 www.fairchildsemi.com 1 2N7000BU / 2N7000TA — Advanced Small-Signal MOSFET , www.fairchildsemi.com 2 2N7000BU / 2N7000TA — Advanced Small-Signal MOSFET Thermal Characteristics(2


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PDF 2N7000BU 2N7000TA 2N7000BU/2N7000TA
2SA1955

Abstract: 2SK1830 HN7G01FU Scans-005646 HN7G01 marking za mosfet MOSFET MARKING ZA
Text: Equivalent Q2 ( MOS-FET ) : 2SK1830 Equivalent Q1 (Transistor) MAXIMUM RATINGS (Ta = 25°C) Q2 ( MOS-FET , — MARKING Type Name CHARACTERISTIC SYMBOL RATING UNIT Power Dissipation PC (*) 200 mW , : 300-600, B : 500-1000 Q2 ( MOS-FET ) ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST , / 0.0 -0.4 -0.8 -1.2 BASE-EMITTER VOLTAGE VßE (V) -1.6 3 2001-05-31 TOSHIBA HN7G01FU O MOS-FET , 3000 Kl C3 1000 < H J 5(1(1 >> 300 ¢ o W £ as 100 t> w o " 50 ¡3 < 30 « p


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PDF HN7G01FU N7G01FU 2SA1955 2SK1830 HN7G01FU Scans-005646 HN7G01 marking za mosfet MOSFET MARKING ZA
Transistor 4515

Abstract: CF300 transistor D 4515 lm 4580 Telefunken u 237 sot-23 MARKING CODE ZA TRANSISTOR BC 414 W-25 0/tda8510j 2.1 creative amplifiers CF-300
Text: ±180- »12 €ž. so a l0- 2. 20 mA I- 100.1300 MHz W- «8« »21 -90° OdB -3 -« -s -IS -a , \\ / \ / * s22 l0. 2.20 itiA f0s.5V VG2S-ÎV €ž- SO Q I- 100. 1300 MHz W-Wc 10 20 mA 224 3659 B , transistor on tape11 Additional marking for specials31 ') 06 » View on flat side of transistor, view on gummed tape 05 = View on round side of transistor, view on gummed tape Additional marking " 0": taping without paper film Additional marking " Z": Zigzag folded tape in special box. Marking for orientation of


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PDF 029426A 50B4DIN41867 569-GS 000s154 hal66 Transistor 4515 CF300 transistor D 4515 lm 4580 Telefunken u 237 sot-23 MARKING CODE ZA TRANSISTOR BC 414 W-25 0/tda8510j 2.1 creative amplifiers CF-300
IRF7102

Abstract: AN-994 SS455 0-30Q
Text: International S Rectifier PD 9.872A IRF7102 HEXFET® Power MOSFET Advanced Process Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching Si CE 01 CE s2qi Q2 CC Udì xi di HD2 ¶ D2 Top View Description Fourth Generation , Characteristics Parameter Min. Typ. Max. Units Test Conditions Is Continuous Source Current 1.8 MOSFET , Appendix C: Part. Marking Information-See page 332 ■Appendix D: Tape & Reel Information - See page 336


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PDF IRF7102 charaRF7102 Mfl554S2 111181X131101131 S54S5 AN-994 SS455 0-30Q
AN-994

Abstract: IRF7406
Text: International iü Rectifier PRELIMINARY PD-9.1247B IRF7406 HEXFET® Power MOSFET • Generation V Technology • Ultra Low On-Resistance • P-Channel Mosfet • Surface Mount • Available in Tape & Reel â , Continuous Source Current (Body Diode) — — -2.0 A MOSFET symbol S showing the A integral reverse a ■\Jj , tl) 16 â o > ® 1? o 1— Ž o CO ld -2.8a vnc - -24v , 332. Appendix C: Part Marking Information — See page 332. Appendix D; Tape and Reel Information â


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PDF 1247B IRF7406 AN-994
2005 - flyback transformer 4kV

Abstract: morocco 9648 MGPWG-00007 step down trafo TRAFO STEP UP ring generator SMD transformer trafo 2kv conversion table PTC byt 78v 6 pin SMD Coev transformer
Text: RSENSE CSF ZA D1 VBAT ZB CH Q1 CVB ZB VDD VF RDD RF1 CV CZ RF2 , gate of the Mosfet only when VPOS reaches 4V and turns it off for VPOS lower than 3V. 4/17 , the ON-time of the mosfet , energy is taken from the input and stored in the primary winding of the , mosfet they indicate the positive side respect to the other one of the transformer, in the Offtime they indicate the negative. The Mosfet have to be choosen with a proper Vds voltage rating, considering also


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PDF AN2132 STLC3075 AN2118) flyback transformer 4kV morocco 9648 MGPWG-00007 step down trafo TRAFO STEP UP ring generator SMD transformer trafo 2kv conversion table PTC byt 78v 6 pin SMD Coev transformer
2005 - Not Available

Abstract: No abstract text available
Text: www.fairchildsemi.com FDA59N25 — N-Channel UniFETTM MOSFET Package Marking and Ordering Information Figure 1 , FDA59N25 N-Channel UniFETTM MOSFET 250 V, 59 A, 49 mΩ Features Description • RDS(on) = 49 mΩ (Max.) @ VGS = 10 V, ID = 29.5 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce , FDA59N25 Rev. C2 oC/W 40 1 www.fairchildsemi.com FDA59N25 — N-Channel UniFETTM MOSFET


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PDF FDA59N25
2013 - Not Available

Abstract: No abstract text available
Text: F 78 E AC 1, 10 Type de Commutation Blanc : Commutation au ©ro de tension -10 , ) Filtre RC standard en sortie inclus Disponible en version ©ro de tension (charges résistives) ou , les modèles HA48/HD48 uniquement) Disponible en version ©ro de tension (charges résistives) ou , Relais -10 Type de Commutation Blanc : Commutation au ©ro de tension -10 : Commutation , ©ro de tension -10 : Commutation instantanée 2,3 1[ 58 ,7] Assemblages J


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2012 - diode de puissance

Abstract: No abstract text available
Text: Montage Rail DIN K Type de Commutation Blanc : Commutation au ©ro de tension -10 : Commutation , en sortie inclus •  Disponible en version ©ro de tension (charges résistives) ou commutation , les modèles HA48/HD48 uniquement) •  Disponible en version ©ro de tension (charges résistives , Montage sur Panneau Série HA/HD -10 Type de Commutation Blanc : Commutation au ©ro de tension , d'être modifiées sans avis préalable. •  Disponible en version ©ro de tension (charges rÃ


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1997 - MOSFET A13

Abstract: lbaa MIC2514BM5 78204 TO263 mark code A11 High-Side MOSFET Driver 15 AMP ADJUSTABLE REGULATOR MARK A11 MIC7211BM5 MOSFET driver SOT
Text: EUROPE-DIE DISTRIBUTION ONLY Elmo Semiconducteurs S.A.R.L. Z.A . La Tuilerie Tel: + 33 (1) 34.77.16.16 78204 , IttyBittyTM Low-Side MOSFET Driver IttyBittyTM Low-Side MOSFET Driver IttyBittyTM Low-Side MOSFET Driver IttyBittyTM Integrated High-Side Switch IttyBittyTM High-Side MOSFET Driver IttyBittyTM High-Side MOSFET , Regulator TinyFETTM P-Channel MOSFET TinyFETTM P-Channel MOSFET noninverting early production mark fixed


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PDF 1x104 OT-23-5 O-220 O-247 OT-23 OT-223 O-263 OT-143 150mA MOSFET A13 lbaa MIC2514BM5 78204 TO263 mark code A11 High-Side MOSFET Driver 15 AMP ADJUSTABLE REGULATOR MARK A11 MIC7211BM5 MOSFET driver SOT
IRF3205 application

Abstract: IRF32305S marking za mosfet MOSFET MARKING ZA
Text: IRF3205S/L HEXFET® Power MOSFET Voss = 55V R d s (oh) = 0.008Q Id = 110A® Description Fifth , Conditions D MOSFET symbol _ 110® - showing the / I , A integral reverse a \. p ) - - 390 S p-n junction , : \ .i ` Urns 10 : t ~ .\ zA : -. . . . . . [ . 1: : ! . . ; . i L.;. : .J . , Transient Thermal Impedance, Junction-to-Case Mechanical drawings, Appendix A Part marking information


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PDF IRF32305S) IRF3205L) 1304B IRF3205S/L IRF3205 application IRF32305S marking za mosfet MOSFET MARKING ZA
2014 - led driver SOT23 6pin

Abstract: No abstract text available
Text: . 5 MIC4604 – 85V Half Bridge MOSFET Driver with up to 16V Programmable Gate Drive . 6 MIC4605 – 85V Half Bridge MOSFET Driver with Adaptive Dead Time and Shoot-Through Protection , . 9 MIC26603-ZA/903- ZA /1203- ZA – 28V, 6A/9A/12A Hyper Speed Control™ Synchronous DC/DC Buck , Half-Bridge MOSFET Driver with up to 16V Programmable Gate Drive The MIC4604 is an 85V Half Bridge MOSFET , MOSFET Driver with Adaptive Dead Time and Shoot-Through Protection The MIC4605 is an 85V half-bridge


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PDF MIC841/2 MIC2790/1/3 MIC2870 MIC2871 MIC4604 145QS F-91140 M0109-012214 led driver SOT23 6pin
2001 - Not Available

Abstract: No abstract text available
Text: FQD17P06 / FQU17P06 P-Channel QFET® MOSFET - 60 V, - 12 A, 135 mΩ Description Features This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored , FQD17P06/ FQU17P06 P-Channel QFET® MOSFET July 2013 Symbol TC = 25°C unless otherwise noted , / FQU17P06 P-Channel QFET® MOSFET Elerical Characteristics VGS - 15.0 V - 10.0 V - 8.0 V - 7.0 V


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PDF FQD17P06 FQU17P06
2001 - Not Available

Abstract: No abstract text available
Text: FQD17P06 / FQU17P06 P-Channel QFET® MOSFET - 60 V, - 12 A, 135 mΩ Description Features This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored , www.fairchildsemi.com FQD17P06/ FQU17P06 P-Channel QFET® MOSFET June 2013 Symbol TC = 25°C unless , / FQU17P06 P-Channel QFET® MOSFET Elerical Characteristics VGS - 15.0 V - 10.0 V - 8.0 V - 7.0 V


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PDF FQD17P06 FQU17P06
AOZ1360

Abstract: marking alpha omega omega power amplifier diagram omega power amplifier circuit ALPHA OMEGA PART MARKING AOZ1360AI ALPHA SEMICONDUCTOR DFN-10 AOZ1360DI AOZ1300
Text: Marking SO-8 DFN4x4 10L LOGO Z1 3 6 0 D I ZA 8 R 1 B AOZ1360 Preliminary Data Sheet Rev0 9 , AOZ1360 Preliminary Data Sheet Rev0 Pin Function P-channel MOSFET source. Connect a 1uF capacitor , . Connect a resistor from SET to GND to set the switch current limit. No Connect P-channel MOSFET Drain , monitors the input voltage and prevents the output MOSFET from turning on until VIN exceeds 4.9V


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PDF AOZ1360 AOZ1360 marking alpha omega omega power amplifier diagram omega power amplifier circuit ALPHA OMEGA PART MARKING AOZ1360AI ALPHA SEMICONDUCTOR DFN-10 AOZ1360DI AOZ1300
2014 - Commande moteur Relais

Abstract: No abstract text available
Text: l’enclenchement au ©ro de tension et l’arrêt au ©ro de courant limitera considérablement , visualisation facile de l'état de la commande •  Disponible en commutation au ©ro de tension (charges rà , Tension de fonctionment charge de 4,8 A Blanc: Commutation au ©ro de tension 48: 480 V AC (3 phases , en version ©ro de tension (charges résistives) ou commutation instantanée (charges inductives , sortie normalement fermée •  Disponible en version ©ro de tension (charges résistives) ou


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2005 - AN2118

Abstract: INDUCTOR DE 100UH SMD PACKAGE STLC3055N CV 360 K20 IRF9510 ptc application note diode BYW 79
Text: ZAC ZA CVB ZB CH Q1 GATE RF1 CV VF ZB L RF2 VDD CLK GAIN SET , start-up, an internal circuit turns-on the gate of the Mosfet only when VPOS reaches 4V and turns it off , described as a two step process. Mosfet in turn-on condition : energy from Vpos is stored in the inductor, diode reverse biased, load on VBAT powered by the energy stored in the output capacitors CV. Mosfet in , appears that the mosfet with a Vthmax = 4V, in the condition of Vgs = 5V and Vds = 1V is able to


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PDF AN2118 STLC3075 AN2132) STLC3055N AN2118 INDUCTOR DE 100UH SMD PACKAGE CV 360 K20 IRF9510 ptc application note diode BYW 79
2005 - INDUCTOR DE 100UH SMD PACKAGE

Abstract: IRF9510 ptc application note STPR120A sm6t39a smd sttb STLC3055Q diode byt 11600
Text: ZAC ZA CVB ZB CH Q1 GATE RF1 CV VF ZB L RF2 VDD CLK GAIN SET , gate of the Mosfet only when VPOS reaches 4V and turns it off for VPOS lower than 3V. For VPOS , works in Buck-Boost configuration and its operation can be described as a two step process. Mosfet in , powered by the energy stored in the output capacitors CV. Mosfet in turn-off condition : energy stored , linear region starting from a minimum VPOS voltage of 5.5V. From fig.1 of appears that the mosfet with


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PDF AN2117 STLC3055N STLC3055Q INDUCTOR DE 100UH SMD PACKAGE IRF9510 ptc application note STPR120A sm6t39a smd sttb diode byt 11600
2005 - byt 78v

Abstract: STLC3055N INDUCTOR DE 100UH SMD PACKAGE transistor smd za TRANSILS STLC3055Q 11Apk IRF9510S AN2117 TYP78
Text: CVCC VPOS RS RSENSE ZAC CCOMP RSENSE P-ch D1 ZAC1 VBAT ZAC ZA CVB ZB , order to prevent problem during start-up, an internal circuit turns-on the gate of the Mosfet only when , Buck-Boost configuration and its operation can be described as a two step process. Mosfet in turn-on , energy stored in the output capacitors CV. Mosfet in turn-off condition : energy stored in the inductor , voltage of 5.5V. From fig.1 of appears that the mosfet with a Vthmax = 4V, in the condition of Vgs = 5V


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PDF AN2117 STLC3055N STLC3055Q byt 78v INDUCTOR DE 100UH SMD PACKAGE transistor smd za TRANSILS 11Apk IRF9510S AN2117 TYP78
OFET

Abstract: No abstract text available
Text: FAIRCHILD January 2006 SEMICONDUCTOR® FDMA430NZ Single N-Channel 2.5V Specified PowerTrench® MOSFET 30V,5.0A,40mQ General Description This Single N-Channel MOSFET has been designed using Fairchild Semiconductor's advanced Power Trench process to optimize the RDS(on) @VQS=2.5V on special MicroFET leadframe , Thermal Resistance, Junction-to-Ambient (Note 1 b) 52 Package Marking and Ordering Information ©2006 , Voltage Temperature Coefficient lD = 250joA, Referenced to 25°C 25.2 mV/°C 'dss ©ro Gâte Voltage


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PDF FDMA430NZ OFET
Not Available

Abstract: No abstract text available
Text: FA IRCHILD SEMICONDUCTOR® January 2006 FDMA420NZ Single N-Channel 2.5V Specified PowerTrench® MOSFET 20V, 5.7A, 30mQ General Description This Single N-Channel MOSFET has been designed using Fairchild Semiconductor's advanced Power Trench process to optimize the RDS(on) @VQS=2.5V on special MicroFET leadframe , 1a) Thermal Resistance, Junction-to-Ambient (Note 1 b) 145 52 °C/W Package Marking and Ordering , Voltage Temperature Coefficient lD = 250joA, Referenced to 25°C 12 mV/°C ATj tass ©ro


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PDF FDMA420NZ
2011 - PWM Controllers

Abstract: "PWM Controllers"
Text: Controllers 66XX: Synchronous-Rectified Buck MOSFET Drivers 72XX: Automotive Communication (J1850) 9XXX , Available) (See Note) PB-FREE OPTION Z: Pb-Free Product ZA : Pb-Free with Anneal PACKAGE DESIGNATOR B


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PDF 10XX-XX: 21XX-XX: J1850) OT-23 1-888-INTERSIL PWM Controllers "PWM Controllers"
2011 - XP202A

Abstract: XP202A0003 single diode sot-23 mark pd A9 marking diode sot23 12Represents sot-23 single diode mark PD SOT-23 MOSFET P-CHANNEL a1 1- mark
Text: XP202A0003MR-G P-channel 4V (G-S) MOSFET ETR1128-003 FEATURES Low On Resistance Ultra High Speed Switching 4V Driving EU RoHS Compliant, Pb Free APPLICATIONS Switching PRODUCT NAME PRODUCT NAME XP202A0003MR-G * PACKAGE SOT-23 ORDER UNIT 3,000/Reel The , SOT-23 MARKING RULE represents product series MARK , XP202A0003*-G represents production lot number 01 to 09, 0A to 0Z, 11 to 9Z, A1 to A9, AA to Z9, ZA to


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PDF XP202A0003MR-G ETR1128-003 OT-23 000/Reel XP202A XP202A0003 single diode sot-23 mark pd A9 marking diode sot23 12Represents sot-23 single diode mark PD SOT-23 MOSFET P-CHANNEL a1 1- mark
Not Available

Abstract: No abstract text available
Text: : TL 0.25 2.9 Marking 0.15 8 5 ZA 2.3 0 t o 0.02 Lot No. TL 4 1 , ECH8420 Ordering number : EN8993A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ECH8420 General-Purpose Switching Device Applications Features • • • • ON-resistance RDS(on)1=5.2mΩ (typ.) 1.8V drive. Halogen free compliance. Protection diode in , usage : Since the ECH8420 is a MOSFET product, please avoid using this device in the vicinity of highly


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PDF ECH8420 EN8993A 900mm2Ã
2011 - ECH8420

Abstract: MARKING ZA MOSFET MARKING ZA
Text: Minimum Packing Quantity : 3,000 pcs./reel Packing Type : TL Marking ZA Lot No. TL 0.25 1 , Ordering number : EN8993 ECH8420 SANYO Semiconductors DATA SHEET ECH8420 Features · · · N-Channel Silicon MOSFET General-Purpose Switching Device Applications ON-resistance RDS(on)1=5.2m (typ.) 1.8V drive Halogen free compliance Specifications Absolute Maximum Ratings at Ta , Temperature, Ta - °C IT16540 Note on usage : Since the ECH8420 is a MOSFET product, please avoid using


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PDF EN8993 ECH8420 PW10s, 900mm2 011A-002 ECH8420 MARKING ZA MOSFET MARKING ZA
Supplyframe Tracking Pixel