The Datasheet Archive

Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
LT1158IN#TR Linear Technology IC HALF BRDG BASED MOSFET DRIVER, PDIP16, 0.300 INCH, PLASTIC, DIP-16, MOSFET Driver
LT1162CN Linear Technology IC 1.5 A FULL BRDG BASED MOSFET DRIVER, PDIP24, 0.300 INCH, PLASTIC, DIP-24, MOSFET Driver
LT1158IN Linear Technology IC HALF BRDG BASED MOSFET DRIVER, PDIP16, 0.300 INCH, PLASTIC, DIP-16, MOSFET Driver
LT1336CN Linear Technology IC 1.5 A HALF BRDG BASED MOSFET DRIVER, PDIP16, 0.300 INCH, PLASTIC, DIP-16, MOSFET Driver
LT1158IS#TR Linear Technology IC 15 A HALF BRDG BASED MOSFET DRIVER, PDSO16, SOIC-16, MOSFET Driver
LT1158IN#TRPBF Linear Technology IC HALF BRDG BASED MOSFET DRIVER, PDIP16, 0.300 INCH, PLASTIC, DIP-16, MOSFET Driver

MOSFET IRF540n Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2001 - irf540n

Abstract: MOSFET IRF540n IRF540NT
Text: IRF540N Data Sheet March 2000 File Number 4842 33A, 100V, 0.040 Ohm, N-Channel Power MOSFET , ) Ordering Information PART NUMBER IRF540N G PACKAGE TO-220AB BRAND IRF540N S TC = 25oC, Unless Otherwise Specified IRF540N UNITS V V V A A 100 100 ±20 33 23 Figure 4 Figures 6, 14, 15 120 0.80 -55 to 175 , of this specification is not implied. ©2001 Fairchild Semiconductor Corporation IRF540N Rev. A IRF540N Electrical Specifications PARAMETER OFF STATE SPECIFICATIONS Drain to Source Breakdown Voltage


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PDF IRF540N O-220AB IRF540N O-220AB MOSFET IRF540n IRF540NT
IRF540N

Abstract: mosfet irf540n
Text: PD - 91341A IRF540N HEXFET® Power MOSFET l l l l l Advanced Process Technology Dynamic , . Max. Units ­­­ 0.50 ­­­ 1.1 ­­­ 62 °C/W 5/13/98 IRF540N Electrical , Conditions D MOSFET symbol 33 ­­­ ­­­ showing the A G integral reverse ­­­ ­­­ 110 p-n junction , (BR)DSS, TJ 175°C Pulse width 300µs; duty cycle 2% IRF540N 1000 1000 VGS 15V 10V , . Temperature IRF540N V GS C iss C rs s C iss C o ss C , Capacitance (pF) 2000 = = = = 20


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PDF 1341A IRF540N O-220 IRF1010 IRF540N mosfet irf540n
Not Available

Abstract: No abstract text available
Text: P D -9.1341 International Hk ]Rectifier IRF540N PRELIMINARY HEXFET® Power MOSFET â , IRF540N _ TO R Electrical Characteristics @ Tj = 25°C (unless otherwise , 1.1 1.3 250 1.6 V ns M C Conditions MOSFET symbol showing the integral reverse p-n , 610 — s0 ( i ‘) — ^ ft ISR IRF540N C 9 > 3 O D O w 6 ± 2 Q VDg , . Normalized On-Resistance Vs. Temperature 0D23Db4 757 ■IRF540N 2400 IÖR |VGS = 0V, f = 1MHz


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PDF IRF540N T0-220
1996 - IRF540N

Abstract: IRF1010
Text: Previous Datasheet Index Next Data Sheet PD - 9.1341 IRF540N PRELIMINARY HEXFET® Power MOSFET Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast , °C/W Previous Datasheet Index Next Data Sheet IRF540N Electrical Characteristics @ TJ = , ­­­ ­­­ ­­­ 170 1.1 1.3 250 1.6 A V ns µC Conditions MOSFET symbol showing the , Index Next Data Sheet IRF540N 1000 1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM


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PDF IRF540N O-220 commercial-indust10 IRF540N IRF1010
2002 - irf540n

Abstract: MOSFET IRF540n power 22E Datasheet IRF540n IRF540NT AN7254 AN9321 AN9322 TB334 AN7260
Text: IRF540N Data Sheet January 2002 33A, 100V, 0.040 Ohm, N-Channel, Power MOSFET Packaging Features JEDEC TO-220AB SOURCE DRAIN GATE DRAIN (FLANGE) IRF540N · Ultra Low On-Resistance - , Pulse Width Curve · UIS Rating Curve Ordering Information Symbol D PART NUMBER IRF540N PACKAGE TO-220AB BRAND IRF540N G S Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified IRF540N UNITS 100 V 100 V ±20 V Drain Current Continuous (TC= 25oC, VGS


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PDF IRF540N O-220AB irf540n MOSFET IRF540n power 22E Datasheet IRF540n IRF540NT AN7254 AN9321 AN9322 TB334 AN7260
2001 - 91341B

Abstract: irf540n 4.5v to 100v input regulator
Text: PD - 91341B IRF540N HEXFET® Power MOSFET l l l l l l Advanced Process Technology , Typ. Max. Units ­­­ 0.50 ­­­ 1.15 ­­­ 62 °C/W 1 03/13/01 IRF540N , . Max. Units Conditions D MOSFET symbol 33 ­­­ ­­­ showing the A G integral reverse ­­­ ­­­ , to TJ = 175°C . 2 www.irf.com IRF540N 1000 1000 VGS 15V 10V 8.0V 7.0V 6.0V , . Temperature 3 IRF540N VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds +


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PDF 91341B IRF540N O-220 O-220AB 91341B irf540n 4.5v to 100v input regulator
1998 - IRF540N

Abstract: MOSFET IRF540n ISD 1400 d
Text: PD - 91341A IRF540N HEXFET® Power MOSFET l l l l l Advanced Process Technology Dynamic , . Max. Units ­­­ 0.50 ­­­ 1.1 ­­­ 62 °C/W 5/13/98 IRF540N Electrical , Conditions D MOSFET symbol 33 ­­­ ­­­ showing the A G integral reverse ­­­ ­­­ 110 p-n junction , (BR)DSS, TJ 175°C Pulse width 300µs; duty cycle 2% IRF540N 1000 1000 VGS 15V 10V , . Temperature IRF540N V GS C iss C rs s C iss C o ss C , Capacitance (pF) 2000 = = = = 20


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PDF 1341A IRF540N O-220 IRF540N MOSFET IRF540n ISD 1400 d
2001 - IRF540N

Abstract: 91341B 16ans 4.5V TO 100V INPUT REGULATOR
Text: PD - 91341B IRF540N HEXFET® Power MOSFET l l l l l l Advanced Process Technology , Typ. Max. Units ­­­ 0.50 ­­­ 1.15 ­­­ 62 °C/W 1 03/13/01 IRF540N , . Max. Units Conditions D MOSFET symbol 33 ­­­ ­­­ showing the A G integral reverse ­­­ ­­­ , to TJ = 175°C . 2 www.irf.com IRF540N 1000 1000 VGS 15V 10V 8.0V 7.0V 6.0V , . Temperature 3 IRF540N VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds +


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PDF 91341B IRF540N O-220 IRF540N 91341B 16ans 4.5V TO 100V INPUT REGULATOR
2000 - IRF540n

Abstract: MOSFET IRF540n mosfet 4842 Datasheet IRF540n AN7254 AN7260 AN9321 AN9322 TB334
Text: IRF540N TM Data Sheet March 2000 File Number 4842 33A, 100V, 0.040 Ohm, N-Channel Power MOSFET Packaging Features JEDEC TO-220AB SOURCE DRAIN GATE DRAIN (FLANGE) · Ultra , NUMBER IRF540N PACKAGE TO-220AB BRAND IRF540N G S Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified IRF540N UNITS Drain to Source Voltage (Note 1) . . . . . . . . . . . . , Corporation 2000 IRF540N TC = 25oC, Unless Otherwise Specified Electrical Specifications PARAMETER


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PDF IRF540N O-220AB IRF540n MOSFET IRF540n mosfet 4842 Datasheet IRF540n AN7254 AN7260 AN9321 AN9322 TB334
1996 - IRF540N

Abstract: MOSFET IRF540n IRF1010 irf1010 applications
Text: PD - 9.1341 IRF540N PRELIMINARY HEXFET® Power MOSFET Advanced Process Technology Dynamic , ­­­­ 1.6 ­­­­ 62 °C/W IRF540N Electrical Characteristics @ TJ = 25°C (unless otherwise , µC Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25°C, IS = , ; duty cycle 2%. IRF540N 1000 1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V , IRF540N 2400 VGS , Gate-to-Source Voltage (V) 2000 C, Capacitance (pF) 20 V GS = 0V, f =


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PDF IRF540N O-220 IRF1010 IRF540N MOSFET IRF540n IRF1010 irf1010 applications
Not Available

Abstract: No abstract text available
Text: PD - 91341B IRF540N HEXFET® Power MOSFET l l l l l l Advanced Process Technology , °C/W 1 03/13/01 IRF540N Electrical Characteristics @ TJ = 25°C (unless otherwise specified , Time Min. Typ. Max. Units Conditions D MOSFET symbol 33 ––– ––– showing the A , calculated value limited to TJ = 175°C . 2 www.irf.com IRF540N 1000  1000 VGS 15V 10V , . Normalized On-Resistance Vs. Temperature 3 IRF540N VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds


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PDF 91341B IRF540N O-220
2001 - Not Available

Abstract: No abstract text available
Text: IRF540N TO-220AB l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Power MOSFET , www.kersemi.com IRF540N Electrical Characteristics @ TJ = 25°C (unless otherwise specified) RDS(on) VGS , . Max. Units Conditions D MOSFET symbol 33 ––– ––– showing the A G integral , 175°C . 2014-8-9 2 www.kersemi.com IRF540N 1000  1000 VGS 15V 10V 8.0V 7.0V


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PDF IRF540N O-220AB O-220
2000 - IRF540N

Abstract: huf76639p3 MOSFET IRF540n HRF3205 equivalent ITF87056DQT HUF75623P3 rfg75 HRF3205S HRF3205 HUF76343
Text: Power MOSFET SPICE and Thermal Models TM Features · · · · · · · Sub Circuit Approach , Currents Package Inductances Gate Source Resistance Third Quadrant Diode Operation POWER MOSFET , HUF76633S3S HUF76639P3 HUF76639S3S HUF76645P3 HUF76645S3S HUFA7510P3 HUFA7510S3S IRF530N IRF540N , RLD03N06CLE RLP03N06CLE RLP1N08LE © Intersil Corporation 2000 Power MOSFET SPICE and Thermal Models , Thermal Resistance (ZJC) Representation POWER MOSFET THERMAL MODELS Available on the web @


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PDF HRF3205 HRF3205S HRFZ44N HUF75307D3 HUF75307D3S HUF75307P3 HUF75307T3ST HUF75309D3 HUF75309D3S HUF75309P3 IRF540N huf76639p3 MOSFET IRF540n HRF3205 equivalent ITF87056DQT HUF75623P3 rfg75 HRF3205S HRF3205 HUF76343
2000 - irf540n irf640

Abstract: IRF630 complementary IRF840 complementary irf630 irf640 IRF730 complementary irfp460 complementary MOSFET IRF540n complementary Complementary MOSFETs buz11 Irfp250 irfp460 IRF9540 complementary
Text: MOSFET Selection Trees Power MOSFET Products N-CHANNEL MOSFETs N-CHANNEL STANDARD GATE MOSFETs BUZ11 BUZ71 BUZ71A BUZ72A HRF3205 HRF3205S HRFZ44N HUF75307D3 HUF75307D3S HUF75307P3 HUF75307T3ST HUF75309D3 HUF75309D3S HUF75309P3 HUF75309T3ST HUF75321D3 HUF75321D3S HUF75321P3 , IRF530N IRF540N IRF610 IRF620 IRF630 IRF640 IRF646 IRF710 IRF720 IRF730 IRF740 IRF820 IRF830 , MOSFET Selection Trees P-CHANNEL MOSFETs P-CHANNEL STANDARD GATE MOSFETs IRF9510 IRF9520 IRF9530


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PDF BUZ11 BUZ71 BUZ71A BUZ72A HRF3205 HRF3205S HRFZ44N HUF75307D3 HUF75307D3S HUF75307P3 irf540n irf640 IRF630 complementary IRF840 complementary irf630 irf640 IRF730 complementary irfp460 complementary MOSFET IRF540n complementary Complementary MOSFETs buz11 Irfp250 irfp460 IRF9540 complementary
EF25 transformer

Abstract: transformer winding formula step down 100nF 400V polyester capacitor capacitor 470nf 50v AN1038 application ferrite material 3c85 t8 ballast circuits ELECTRONIC BALLAST 36W circuit diagram E25/13/7 EF25 equivalent of irf540n
Text: this system both power switching MOSFET sources are connected to 0V. In order to obtain the required current level and phase information a sense resistor must be added from the source of the LO side MOSFET , consisting of R15 and C10 is also added to reduce ringing overshoot voltages that occur when each MOSFET , be achieved using the IR2159 which has a fixed dead time of 1.8uS. The MOSFETs used are type IRF540N , ) R4 12K MAX 5 R5 27K MIN R6 36K FMIN R7 27K IRF540N VS 3 R3 10K Q1


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PDF AN1038 IR2159 IR2156 100nF EF25 transformer transformer winding formula step down 100nF 400V polyester capacitor capacitor 470nf 50v AN1038 application ferrite material 3c85 t8 ballast circuits ELECTRONIC BALLAST 36W circuit diagram E25/13/7 EF25 equivalent of irf540n
2000 - complementary of irf830

Abstract: IRF630 complementary irf630 irf640 irf540n irf640 IRF640 irf510 Irfp250 irfp460 IRFP150N IRF610 complementary IRFP150 IRF640
Text: Power MOSFET Selection Trees TM N-CHANNEL STANDARD GATE MOSFETs BUZ11 BUZ71 BUZ71A BUZ72A HRF3205 HRF3205S HRFZ44N HUF75307D3 HUF75307D3S HUF75307P3 HUF75307T3ST HUF75309D3 HUF75309D3S HUF75309P3 HUF75309T3ST HUF75321D3 HUF75321D3S HUF75321P3 HUF75321S3S HUF75329D3 HUF75329D3S , HUF75831SK8 HUF75842P3 HUF75842S3S HUF75852G3 IRF510 IRF520 IRF530N IRF540N IRF610 IRF620 IRF630 , © Intersil Corporation 2000 MOSFET Selection Trees P-CHANNEL STANDARD GATE MOSFETs IRF9510 IRF9520


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PDF BUZ11 BUZ71 BUZ71A BUZ72A HRF3205 HRF3205S HRFZ44N HUF75307D3 HUF75307D3S HUF75307P3 complementary of irf830 IRF630 complementary irf630 irf640 irf540n irf640 IRF640 irf510 Irfp250 irfp460 IRFP150N IRF610 complementary IRFP150 IRF640
equivalent of irf540n

Abstract: IRF540 IRF540N irf540n or equivalent irf540N equivalent
Text: PD - 94833 IRFI540NPbF HEXFET® Power MOSFET l l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Lead-Free D VDSS = 100V RDS(on) = 0.052 G Description ID = 20A S Fifth , 1.1 1.3 250 1.6 A V ns µC Conditions MOSFET symbol showing the integral reverse p-n , = 25°C, L = 2.0mH t=60s, =60Hz ISD 16A, di/dt 210A/µs, VDD V(BR)DSS, Uses IRF540N


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PDF IRFI540NPbF O-220 IRF540N I840G equivalent of irf540n IRF540 irf540n or equivalent irf540N equivalent
ELECTRONIC BALLAST 36W circuit diagram

Abstract: EF25 transformer circuit diagram electronic ballast for 36W tube EF25 ferrite transformer ungapped ferrite material 3c85 EF25 n27 transformer winding formula step down EF25 bobbin 36W Ballast E25/13/7 EF25
Text: the lamp. In this system both power switching MOSFET sources are connected to 0V. In order to obtain , LO side MOSFET to 0V. The current will be much larger at this point than in a mains powered ballast , when each MOSFET switches off. The snubber will also increase the commutation time at switch off so , used are type IRF540N which have a Vdss rating of 100V and Rds(on) of 0.044 at 25ºC. The peak drain , ) R4 12K MAX 5 R5 27K MIN R6 36K FMIN R7 27K IRF540N VS 3 R3 10K Q1


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PDF AN-1038a IR2156 IR2159 100nF ELECTRONIC BALLAST 36W circuit diagram EF25 transformer circuit diagram electronic ballast for 36W tube EF25 ferrite transformer ungapped ferrite material 3c85 EF25 n27 transformer winding formula step down EF25 bobbin 36W Ballast E25/13/7 EF25
irf540

Abstract: IRF540NS to262 pcb footprint IRF540NL AN-994 IRF540N diode 16A 100V
Text: Recovery Charge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol 33 ­­­ ­­­ , limits. This is a calculated value limited to TJ = 175°C . Uses IRF540N data and test conditions


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PDF IRF540NS/IRF540NL IRF540N AN-994 O-262 irf540 IRF540NS to262 pcb footprint IRF540NL AN-994 diode 16A 100V
IRF540NS D2PAK

Abstract: IRF540NS ir 941 IRF540NL AN-994 IRF540N
Text: Recovery Charge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol 33 ­­­ ­­­ , limits. This is a calculated value limited to TJ = 175°C . Uses IRF540N data and test conditions


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PDF IRF540NS/IRF540NL EIA-418. IRF540NS D2PAK IRF540NS ir 941 IRF540NL AN-994 IRF540N
1996 - IRFI540N

Abstract: IRF540N IRFI840G
Text: PD - 9.1361 IRFI540N PRELIMINARY HEXFET® Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D U VDSS = 100V RDS(on) = 0.052 G Description ID = 18A S Fifth , A V ns µC Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ , width limited by T Pulse width 300µs; duty cycle 2%. RV U t=60s, =60Hz SI Uses IRF540N


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PDF IRFI540N O-220 IRFI540N IRF540N IRFI840G
2003 - equivalent of irf540n

Abstract: IRF540N 4.5V to 100V input regulator
Text: PD - 94833 IRFI540NPbF HEXFET® Power MOSFET l l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Lead-Free D VDSS = 100V RDS(on) = 0.052 G Description ID = 20A S Fifth , 1.1 1.3 250 1.6 A V ns µC Conditions MOSFET symbol showing the integral reverse p-n , = 25°C, L = 2.0mH t=60s, =60Hz ISD 16A, di/dt 210A/µs, VDD V(BR)DSS, Uses IRF540N


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PDF IRFI540NPbF O-220 I840G equivalent of irf540n IRF540N 4.5V to 100V input regulator
Not Available

Abstract: No abstract text available
Text: PD - 94833 IRFI540NPbF HEXFET® Power MOSFET l l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Lead-Free D VDSS = 100V RDS(on) = 0.052Ω G Description ID = 20A S , – 170 1.1 1.3 250 1.6 A V ns µC Conditions MOSFET symbol showing the integral , /µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C † Uses IRF540N data and test conditions D G S


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PDF IRFI540NPbF O-220 I840G
2003 - equivalent of irf540n

Abstract: IRF540N 4.5V to 100V input regulator IRFI540NPBF
Text: PD - 94833 IRFI540NPbF HEXFET® Power MOSFET l l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Lead-Free D VDSS = 100V RDS(on) = 0.052 G Description ID = 20A S Fifth , 1.1 1.3 250 1.6 A V ns µC Conditions MOSFET symbol showing the integral reverse p-n , = 25°C, L = 2.0mH t=60s, =60Hz ISD 16A, di/dt 210A/µs, VDD V(BR)DSS, Uses IRF540N


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PDF IRFI540NPbF O-220 I840G equivalent of irf540n IRF540N 4.5V to 100V input regulator IRFI540NPBF
Not Available

Abstract: No abstract text available
Text: International IG R Rectifier PD - 9.1343A IRFP140N PRELIMINARY HEXFET® Power MOSFET • • • • • Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated V dss = "100 V RüS(on) = 0.052Î2 lD = 33A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to , ) © Pulse width < 300|is; duty cycle < 2%. © Uses IRF540N data and test conditions. f I -


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PDF IRFP140N O-247
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