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Part Manufacturer Description Datasheet Download Buy Part
LT1158IN#TR Linear Technology IC HALF BRDG BASED MOSFET DRIVER, PDIP16, 0.300 INCH, PLASTIC, DIP-16, MOSFET Driver
LT1162CN Linear Technology IC 1.5 A FULL BRDG BASED MOSFET DRIVER, PDIP24, 0.300 INCH, PLASTIC, DIP-24, MOSFET Driver
LT1158IN Linear Technology IC HALF BRDG BASED MOSFET DRIVER, PDIP16, 0.300 INCH, PLASTIC, DIP-16, MOSFET Driver
LT1336CN Linear Technology IC 1.5 A HALF BRDG BASED MOSFET DRIVER, PDIP16, 0.300 INCH, PLASTIC, DIP-16, MOSFET Driver
LT1158IS#TR Linear Technology IC 15 A HALF BRDG BASED MOSFET DRIVER, PDSO16, SOIC-16, MOSFET Driver
LT1158IN#TRPBF Linear Technology IC HALF BRDG BASED MOSFET DRIVER, PDIP16, 0.300 INCH, PLASTIC, DIP-16, MOSFET Driver

MOSFET ESD Rated Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
SiB431EDK

Abstract: No abstract text available
Text: P-Channel 1.2-V (G-S) Rated MOSFET VDS = -8 V, ID = -1.6 A rDS(on) = 78 milliohms Si8424DB NEW N-Channel 1.2V (G-S) Rated MOSFET VDS = 8 V, ID = 12.2 A rDS(on) = 31 milliohms SMD MICRO FOOT 1.6 x 1.6 Si8429DB NEW P-Channel 1.2V (G-S) Rated MOSFET VDS = -8 V, ID = -11.7 A rDS(on) = 35 milliohms SMD MICRO FOOT 1.6 x 1.6 Si8441DB NEW P-Channel 1.2-V (G-S) Rated MOSFET , P-Channel 1.2-V (G-S) Rated MOSFET VDS = -20 V, ID = -9.8 A rDS(on) = 84 milliohms SMD MICRO FOOT


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PDF LLP1010-6L LLP75-6L VEMI45AC-HNH VEMI65AC-HCI LLP2513-13L VEMI85AC-HGK LLP1713-9L LLP3313-17L SiB431EDK
Not Available

Abstract: No abstract text available
Text: Name 2N7002K Status Description N-Ch; 60V (DS) MOSFET ; add ESD protect function Features , €¢ Visible LEDS • Inductors/EMI Filters • Transient/Overvoltage Protection Devices • ESD Protection , such as ESD protection, current limiting, or load switching. page 2 xDSL ModemRouter : DC/DC , N-Channel 30-V (D-S) Mosfet Features N-Channel; 30-V (D-S); rDS(on) = 0.0095 Ohm; Package Q-Level , ) Mosfet Features N-channel 30V rDSon= 0.0039 Ohm ID=30.5 A Package Q-Level SO-8 page 5


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PDF 1N4148WS-V 500mA BAT54A-V 200mA; OT-23 BAT54W-V OD123 BAV99-V OD-323
Not Available

Abstract: No abstract text available
Text: 1.0A SMD Micro SMP SSA34 40V, 3A 0.42V at 3.0A Q-Level SMA Switching MOSFET Product Name Status Si1032X Description N-channel 20V MOSFET VDS = 20V ; ID = 200mA ; rds(on) = , : Peripherals, Printer Power MOSFET Product Name Si4116DY Status Description N-channel 25V MOSFET VDS , page 6 Payment Systems : Peripherals, USB ESD protection diode Product Name VBUS051BD Status Description Single Line ESD protection device ESD Immunity > 15 kV Features Low capacitance Ultra


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PDF SIS402DN VLMW321 VEMI65AC 240Mhz LLP2513-13L
2013 - supercap

Abstract: No abstract text available
Text: the next SAB MOSFET down in the series, ALD810025. For an ALD810025 operating at a max. rated , /ALD910024/ALD910025/ ALD910026/ALD910027/ALD910028 DUAL SUPERCAPACITOR AUTO BALANCING (SAB™) MOSFET , stacks and arrays • Near zero additional leakage currents • Zero leakage at 0.3V below rated , extra power dissipation. For many applications, SAB MOSFET automatic charge balancing offers a simple , MOSFET provides regulation of the voltage across a supercap cell by increasing its drain current


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PDF ALD910023/ALD910024/ALD910025/ ALD910026/ALD910027/ALD910028 ALD8100xx ALD9100xx ALD910023, ALD910024, ALD910025, ALD910026, supercap
2014 - ALD810026SCL

Abstract: No abstract text available
Text: supply using two 2.7V rated supercaps connected in a series and a single SAB MOSFET array package. For a , /ALD810024/ALD810025/ ALD810026/ALD810027/ALD810028 QUAD SUPERCAPACITOR AUTO BALANCING (SAB™) MOSFET , stacks and arrays • Near zero additional leakage currents • Zero leakage at 0.3V below rated , extra power dissipation. For many applications, SAB MOSFET automatic charge balancing offers a simple , SAB MOSFET provides regulation of the voltage across a supercap cell by increasing its drain current


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PDF ALD810023/ALD810024/ALD810025/ ALD810026/ALD810027/ALD810028 ALD8100xx ALD9100xx SOIC-16 ALD810023, ALD810024, ALD810025, ALD810026SCL
corona treatment circuit

Abstract: MOSFET ESD Rated esd protect mosfet AN-955 corona discharge circuit
Text: . 2 4. ESD Failure of the Power MOSFET , . Statistically, it is unlikely that a particular MOSFET will be destroyed by Electrostatic-Discharge ( ESD ). , high-energy ESD . ESD Failure of the Power MOSFET Failure Mode One of the biggest operating advantages of the power MOSFET can also be the cause of its demise when it comes to ESD ultra-high input resistance , insulation. Figure 1. Basic HEXFET Structure ESD destruction of the MOSFET occurs when the


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PDF AN-955 corona treatment circuit MOSFET ESD Rated esd protect mosfet AN-955 corona discharge circuit
2012 - GRM21BR71C475KA73L

Abstract: No abstract text available
Text: N-channel MOSFET . Supply VDD (supply) is rated for +2.7V to +9V. An external capacitor is recommended to , MIC5019 Ultra-Small High-Side N-Channel MOSFET Driver with Integrated Charge Pump General Description The MIC5019 is a high-side MOSFET driver with integrated charge pump designed to switch an NChannel enhancement type MOSFET control signal in high-side or low­side applications. The MIC5019 operates , mode. In high side configurations, the source voltage of the MOSFET approaches the supply voltage when


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PDF MIC5019 MIC5019 MIC5019ellectual GRM21BR71C475KA73L
1997 - corona treatment circuit

Abstract: AN-955 corona discharge circuit esd protect mosfet MOSFET ESD Rated
Text: MOSFET will be destroyed by Electrostatic-Discharge ( ESD ). However, when thousands of MOSFETs are , . Figure 1. Basic HEXFET Structure ESD destruction of the MOSFET occurs when the gate-to-source voltage is , MOSFET . The failure mode is ESD but the effect is caused by placing the unprotected gate of the FET in a , measures. Materials and Methods for ESD Control Direct Protection Method In protecting any power MOSFET , IR Application Note AN-955 TITLE: Protecting IGBTs and MOSFETs from ESD Notices: (HEXFET is


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PDF AN-955 corona treatment circuit AN-955 corona discharge circuit esd protect mosfet MOSFET ESD Rated
1997 - IRF540 n-channel MOSFET

Abstract: IRF540 mosfet with maximum VDS 12v Zener diode with 9v 5V GATE TO SOURCE VOLTAGE MOSFET IRF540 mosfet series connection of mosfet TO 220 Package High current N CHANNEL MOSFET Zener 9v 20W Solenoid Driver 12v irlz44
Text: standard MOSFET . The MIC5018 is available in the SOT-143 package and is rated for ­40°C to +85°C ambient , MOSFET protection Operates in low- and high-side configurations TTL compatible input ESD protected , MIC5018 Micrel MIC5018 IttyBittyTM High-Side MOSFET Driver Preliminary Information General Description Features The MIC5018 IttyBittyTM high-side MOSFET driver is designed to switch an N-channel enhancement-type MOSFET from a TTL compatible control signal in high- or low-side


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PDF MIC5018 MIC5018 OT-143 IRF540* IRF540 n-channel MOSFET IRF540 mosfet with maximum VDS 12v Zener diode with 9v 5V GATE TO SOURCE VOLTAGE MOSFET IRF540 mosfet series connection of mosfet TO 220 Package High current N CHANNEL MOSFET Zener 9v 20W Solenoid Driver 12v irlz44
2012 - Not Available

Abstract: No abstract text available
Text: MIC5019 Ultra-Small High-Side N-Channel MOSFET Driver with Integrated Charge Pump General Description The MIC5019 is a high-side MOSFET driver with integrated charge pump designed to switch an NChannel enhancement type MOSFET control signal in high-side or low–side applications. The MIC5019 , shutdown mode. In high side configurations, the source voltage of the MOSFET approaches the supply voltage when switched on. To keep the MOSFET turned on, the MIC5019’s output drives the MOSFET gate


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PDF MIC5019 MIC5019 MIC5019â
1997 - IRF540 n-channel MOSFET

Abstract: 20w SOT143 IRF540 Zener diode with 9v FOR POWER SUPPLY Si9410DY MIC5018BM4 MIC5018 MH10 IRLZ44 diode marking 20W sot 143
Text: gate-to-ground MOSFET protection Operates in low- and high-side configurations TTL compatible input ESD protected Applications · · · · In high-side configurations, the source voltage of the MOSFET , MIC5018 Micrel MIC5018 IttyBittyTM High-Side MOSFET Driver Final Information General Description Features The MIC5018 IttyBittyTM high-side MOSFET driver is designed to switch an N-channel enhancement-type MOSFET from a TTL compatible control signal in high- or low-side switch applications. This


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PDF MIC5018 MIC5018 OT-143 OT-143 IRF540 n-channel MOSFET 20w SOT143 IRF540 Zener diode with 9v FOR POWER SUPPLY Si9410DY MIC5018BM4 MH10 IRLZ44 diode marking 20W sot 143
Not Available

Abstract: No abstract text available
Text: gate-to-ground MOSFET protection Operates in low- and high-side configurations TTL compatible input ESD protected The MIC5018 IttyBitty™ high-side MOSFET driver is de­ signed to switch an N-channel enhancement-type MOSFET from a TTL compatible control signal in high- or low-side switch applications. This , used to turn on an external N-channel MOSFET . Supply VS (supply) is rated for +2.7V to +9V. An , MIC5018 MIC5018 IttyBitty™ High-Side MOSFET Driver Preliminary Information Features


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PDF MIC5018 150jjA MIC5018 OT-143 OT-23 OT-143
Zener diode with 9v FOR POWER SUPPLY

Abstract: 9V 1A MOSFET N-channel n02 mosfet MH10 inductor input 5 volt 3 v voltage mosfet marking micrel sot cd sot143 fet
Text: MOSFET . Supply VS (supply) is rated for +2.7V to +9V. An external capacitor is recommended to decouple , mica General Description The MIC5018 IttyBittyTM high-side MOSFET driver is de signed to switch an N-channel enhancement-type MOSFET from a TTL compatible control signal in high- or low-side switch , . To keep the MOSFET turned on, the MIC5018's output drives the MOSFET gate voltage higher than the , . Under some conditions, the MIC5018 and MOSFET can switch a load voltage that is slightly higher than the


OCR Scan
PDF MIC5018 OT-143 MIC5018 Zener diode with 9v FOR POWER SUPPLY 9V 1A MOSFET N-channel n02 mosfet MH10 inductor input 5 volt 3 v voltage mosfet marking micrel sot cd sot143 fet
injector MOSFET driver

Abstract: No abstract text available
Text: N-Channel Logic Level Power MOSFET These SMARTDISCRETES devices feature current limiting for short circuit protection, an integral gate-to-source clamp for ESD protection and gate-to-drain clamp for over-voltage , suppression components. The gate-tosource clamp protects the MOSFET input from electrostatic gate voltage stresses up to 2.0 kV. The gate-to-drain clamp protects the MOSFET drain from drain avalanche stresses that , which combines the advantages of a power MOSFET output device with on-chip protective circuitry. This


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PDF MLP1N06CL MLP1N06CL injector MOSFET driver
2004 - D9N05

Abstract: D9N05CL
Text: NID9N05CL Power MOSFET 9 Amps, 52 Volts N-Channel, Logic Level, Clamped MOSFET w/ ESD Protection , (ON) TYP 90 m · · · · · Diode Clamp Between Gate and Source ESD Protection - HBM 5000 V Active , Vdc Vdc A W °C mJ ESD Protection Source (Pin 3) MARKING DIAGRAM 1 DPAK CASE 369C STYLE 2 , Publication Order Number: NID9N05CL/D NID9N05CL MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless , 55 -10 59 - Vdc mV/°C mAdc Symbol Min Typ Max Unit http://onsemi.com 2 NID9N05CL MOSFET


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PDF NID9N05CL NID9N05CL/D D9N05 D9N05CL
2009 - microcontroller based overvoltage and under voltage relays

Abstract: BSP75N HITFET BTS117 BSP78 DS08 DIODE bts3134 BTS3408 BSP77 BTS117 BTS118D
Text: protected MOSFET device that offers ESD and overvoltage protection. The datasheet curves and parameters of , temperature, and - electrostatic discharge ( ESD ) over a wide, almost unlimited range of automotive and , of HITFETs as improved, evolved MOSFET devices. At one end there is the typical MOSFET (with no protection), followed by TEMPFET/SPEEDTEMPFET, Clamped MOSFET , and the self-protected HITFETs as illustrated below. Figure 3.1. HITFET evolution: MOSFET and TEMPFET - block diagram Figure 3.2. HITFET


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2004 - d9n05cl

Abstract: AN569 NID9N05CL NID9N05CLT4
Text: NID9N05CL Power MOSFET 9.0 A, 52 V, N-Channel, Logic Level, Clamped MOSFET w/ ESD Protection in , Switching Noise Generation VDSS (Clamped) · · · · · Diode Clamp Between Gate and Source ESD , MPWR Overvoltage Protection ESD Protection Solenoid Drivers, Lamp Drivers, Small Motor , , BRD8011/D. Publication Order Number: NID9N05CL/D NID9N05CL MOSFET ELECTRICAL CHARACTERISTICS (TJ , (VDS = 25 V, VGS = 0 V, f = 10 kHz) - 30 - pF NID9N05CL MOSFET ELECTRICAL


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PDF NID9N05CL NID9N05CL/D d9n05cl AN569 NID9N05CL NID9N05CLT4
501B 8 P

Abstract: 5018B
Text: compatible input ESD protected The MIC5018 IttyBittyTM high-side MOSFET driver is de signed to switch an N-channel enhancement-type MOSFET from a TTL compatible conlrol signal in high- or low-side switch , MIC5018 IE General Description ü b L · · · · · · · · IttyBittyTM High-Side MOSFET , . To keep the MOSFET turned on, the MIC5018's output drives the MOSFET gate voltage higher than the , the driver supply voltage. In a low-side configuration, the driver can control a MOSFET that switches


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PDF MIC5018 MIC5018 IC5018 F540- 501B 8 P 5018B
2003 - d9n05cl

Abstract: A 0412 MOSFET gate to drain clamp 369A-13 AN569 NID9N05CL NID9N05CLT4 mosfet transistor 400 volts.100 amperes D9N05
Text: NID9N05CL Power MOSFET 9 Amps, 52 Volts N-Channel, Logic Level, Clamped MOSFET w/ ESD , · · · · Drain (Pins 2, 4) Diode Clamp Between Gate and Source ESD Protection - HBM 5000 V , Resistance Gate (Pin 1) Applications RG MPWR Overvoltage Protection ESD Protection · , /Rail Publication Order Number: NID9N05CL/D NID9N05CL MOSFET ELECTRICAL CHARACTERISTICS (TJ = , ://onsemi.com 2 pF NID9N05CL MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted


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PDF NID9N05CL NID9N05CL/D d9n05cl A 0412 MOSFET gate to drain clamp 369A-13 AN569 NID9N05CL NID9N05CLT4 mosfet transistor 400 volts.100 amperes D9N05
1999 - P-Channel mosfet 400v to220

Abstract: IGBT DRIVE 500V 300A 400V switching transistor 0,3A mosfet Microwave Oven Inverter Control IC forklift apec igbt 100a 150v CT60AM-18B Transistor Mosfet N-Ch 30V ct60am
Text: , Fork Lift, Microwave Oven 5. Conclusion APEC '99 Planar versus Trench-Gate MOSFET Unit , APEC '99 Trench-Gate MOSFET Technology Focus: · · · · · · · Low voltage types 20V - 150V , ) at low driving voltage Preserve ESD ruggedness APEC '99 Low voltage MOSFETs benefit most from trench gate: % of RDS(ON) Typical 60V High Density Planar Gate MOSFET Typical 500V MOSFET RCH 30% 10% RJFET 20% 5% RN- 30% 80% Other 20% 5% Trench


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PDF CM600HA-5F CM450HA-5F CM350DU-5F CM200TU-5F CT60AM-18B P-Channel mosfet 400v to220 IGBT DRIVE 500V 300A 400V switching transistor 0,3A mosfet Microwave Oven Inverter Control IC forklift apec igbt 100a 150v CT60AM-18B Transistor Mosfet N-Ch 30V ct60am
driver IC for IRF540 MOSFET

Abstract: 5v 1a ZENER DIODE
Text: a standard MOSFET . The MIC5018 is available in the SOT-143 package and is rated for -4 0 °C to +85°C , to turn on an external N-channel MOSFET . Supply VS (supply) is rated for +2.7V to +9V. An external , MIC5018 IttyBittyTM High-Side MOSFET Driver Preliminary Information General Description The , , the M IC5018's output drives the MOSFET gate voltage higher than the supply voltage. In a typical , low-side configuration, the driver can control a MOSFET that switches any voltage up to the rating of the


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PDF MIC5018 MIC5018 OT-143 IRF540* driver IC for IRF540 MOSFET 5v 1a ZENER DIODE
1n06c

Abstract: 1n06 fuel injector test
Text: Clamped, Current Limited N-Channel Logic Level Power MOSFET The MLD1N06CL is designed for applications , occur. This logic level power MOSFET features current limiting for short circuit protection, integrated Gate-Source clamping for ESD protection and integral Gate-Drain clamping for over-voltage protection and , use of external transient suppression components. The Gate-Source clamp protects the MOSFET input from electrostatic voltage stress up to 2.0 kV. The Gate-Drain clamp protects the MOSFET drain from the avalanche


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PDF MLD1N06CL MLD1N06CL 1n06c 1n06 fuel injector test
1998 - varistor 103 2kv

Abstract: AN9108 Transient Voltage Suppression Devices, Harris 24v vehicle ignition switches AN-910 DIODE 1334 LM Harris Semiconductor TRANSIENT SURGE SUPPRESSOR 24V alternator load dump AN9307 voltage suppressor
Text: threat of an ESD transient. In the protection of a MOSFET driven with a 10V gate drive, the V14MLA1206 or , likely types of transients from which a circuit must be protected are electrostatic discharge ( ESD ), and the switching of reactive loads. ESD will result when two Harris "ML" Multilayer Surface Mount , device. EMI AND ESD · DIODES WAVE MIXER GP SIGNAL RECTIFIERS REFERENCE ZENER · TRANSISTORS LOW POWER , ESD - ELECTROSTATIC DISCHARGE EMP - ELECTROMAGNETIC PULSE FIGURE 1. RELATIVE DAMAGE SUSCEPTIBILITY


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PDF AN9108 1-800-4-HARRIS varistor 103 2kv Transient Voltage Suppression Devices, Harris 24v vehicle ignition switches AN-910 DIODE 1334 LM Harris Semiconductor TRANSIENT SURGE SUPPRESSOR 24V alternator load dump AN9307 voltage suppressor
1999 - FIRING squib

Abstract: MIC2660BM5 IRL3103 MIC1557 MIC2660 Vin 1.2v charge pump sot Vin 9v charge pump sot sot-23-5 fet Step-up Converter sot-23-5
Text: enable · ESD protected Applications · · · · · · · · The MIC2660 can be used with or , the SOT-23-5 package and is rated for ­40°C to +85°C ambient temperature range. Squib firing Refresh Burst/dump Low duty cycle load LCD bias generator Local 5V logic supply MOSFET driver , 1.3 µs General Note: Devices are ESD protected, however handling precautions are recommended , or output. An actual device also has some internal loss. ESD Protection Zener diodes are provided


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PDF MIC2660 MIC2660 OT-23-5 OT-23-5 FIRING squib MIC2660BM5 IRL3103 MIC1557 Vin 1.2v charge pump sot Vin 9v charge pump sot sot-23-5 fet Step-up Converter sot-23-5
1996 - D2N05Z

Abstract: d2n05 AN569 MMDF2N05ZR2 SMD310 zener diode marking 4x
Text: drives. · · · · · · · · Motorola Preferred Device TM DUAL TMOS POWER MOSFET 2.0 AMPERES 50 VOLTS RDS(on) = 0.300 OHM D G Dual N­Channel MOSFET in SO­8 Package with 1500 V ESD , ) Figure 12. Maximum Rated Forward Biased Safe Operating Area 6 Motorola TMOS Power MOSFET , Zener ESD Protected Gate EZFETsTM are an advanced series of power MOSFETs which utilize Motorola , provide protection against ESD and unexpected transients. These miniature surface mount MOSFETs feature


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PDF MMDF2N05ZR2/D MMDF2N05ZR2 MMDF2N05ZR2/D* D2N05Z d2n05 AN569 MMDF2N05ZR2 SMD310 zener diode marking 4x
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