The Datasheet Archive

Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
LT1158IN#TRPBF Linear Technology IC HALF BRDG BASED MOSFET DRIVER, PDIP16, 0.300 INCH, PLASTIC, DIP-16, MOSFET Driver
LT1161CS Linear Technology IC 4 CHANNEL, BUF OR INV BASED MOSFET DRIVER, PDSO20, SO-20, MOSFET Driver
LT1160IS#TR Linear Technology IC 1.5 A HALF BRDG BASED MOSFET DRIVER, PDSO14, 0.150 INCH, PLASTIC, SO-14, MOSFET Driver
LT1158IS Linear Technology IC 15 A HALF BRDG BASED MOSFET DRIVER, PDSO16, PLASTIC, SOL-16, MOSFET Driver
LT1158IS#TR Linear Technology IC 15 A HALF BRDG BASED MOSFET DRIVER, PDSO16, SOIC-16, MOSFET Driver
LT1160IN Linear Technology IC 1.5 A HALF BRDG BASED MOSFET DRIVER, PDIP14, 0.300 INCH, PLASTIC, DIP-14, MOSFET Driver

MOSFET B20 N03 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2000 - MTB1306

Abstract: MTP1306 NTB75N03-06 NTP75N03-06 MOSFET n03
Text: NTP75N03-06, NTB75N03-06 Power MOSFET 75 Amps, 30 Volts N­Channel TO­220 and D2PAK http://onsemi.com This 10 VGS gate drive vertical Power MOSFET is a general purpose part that provides the "best of design" available today in a low cost power package. Avalanche energy issues make this part an , ASSIGNMENTS 4 Drain 4 Drain E75 N03 ­06 YWW E75 N03 ­06 YWW 1 Gate 3 Source 2 Drain 1 Gate N03 ­06 Y WW 2 Drain 3 Source = Device Code = Year = Work Week ORDERING


Original
PDF NTP75N03-06, NTB75N03-06 r14525 NTP75N03 MTB1306 MTP1306 NTB75N03-06 NTP75N03-06 MOSFET n03
2002 - SPICE QT 52 CIRCUIT DIAGRAMS

Abstract: N03-06 MTB1306 MTP1306 NTB75N03-06 NTP75N03-06
Text: NTP75N03-06, NTB75N03-06 Power MOSFET 75 Amps, 30 Volts N­Channel TO­220 and D2PAK http://onsemi.com This 10 VGS gate drive vertical Power MOSFET is a general purpose part that provides the "best of design" available today in a low cost power package. Avalanche energy issues make this part an , ASSIGNMENTS 4 Drain 4 Drain E75 N03 ­06 YWW E75 N03 ­06 YWW 1 Gate 3 Source 2 Drain 1 Gate N03 ­06 Y WW 2 Drain 3 Source = Device Code = Year = Work Week ORDERING


Original
PDF NTP75N03-06, NTB75N03-06 r14525 NTP75N03 SPICE QT 52 CIRCUIT DIAGRAMS N03-06 MTB1306 MTP1306 NTB75N03-06 NTP75N03-06
2003 - "943" to-220

Abstract: MTB1306 MOSFET n03 N0306
Text: NTP75N03-06, NTB75N03-06 Power MOSFET 75 Amps, 30 Volts N-Channel TO-220 and D2PAK This 20 VGS gate drive vertical Power MOSFET is a general purpose part that provides the "best of design" available today in a low cost power package. This power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The Drain-to-Source Diode has a fast response with soft recovery. Features , 75 N03 -06 YWW 1 Gate 3 Source G S 75 N03 -06 YWW 1 Gate 2 Drain 3 Source 2 Drain 75N03-06


Original
PDF NTP75N03-06, NTB75N03-06 O-220 "943" to-220 MTB1306 MOSFET n03 N0306
2003 - t14n03

Abstract: t14-n03 T14 N03 14n03 351 MARKING D-PAK 351 D-PAK MARKING CODE 351 D-PAK
Text: NTD14N03R Power MOSFET 14 Amps, 25 Volts N-Channel DPAK Features · · · · · Planar HD3e Process for Fast Switching Performance Low RDS(on) to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in High-Efficiency DC-DC Converters , 369D DPAK (Straight Lead) STYLE 2 2 MARKING DIAGRAM & PIN ASSIGNMENTS 4 Drain YWW T14 N03 4 Drain YWW T14 N03 3 Source 1 Gate 2 Drain 3 Source Package DPAK DPAK Straight Lead DPAK Shipping 75


Original
PDF NTD14N03R t14n03 t14-n03 T14 N03 14n03 351 MARKING D-PAK 351 D-PAK MARKING CODE 351 D-PAK
2005 - Not Available

Abstract: No abstract text available
Text: NTP75N03-06, NTB75N03-06 Power MOSFET 75 Amps, 30 Volts N-Channel TO-220 and D2PAK This 20 VGS gate drive vertical Power MOSFET is a general purpose part that provides the "best of design" available today in a low cost power package. This power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The Drain-to-Source Diode has a fast response with soft recovery. Features , 75 N03 -06 YWW 1 Gate 3 Source G S 75 N03 -06 YWW 1 Gate 2 Drain 3 Source 2 Drain 75N03-06


Original
PDF NTP75N03-06, NTB75N03-06 O-220 NTP75N03-06/D
2003 - SPICE QT 60 CIRCUIT DIAGRAMS

Abstract: MTB1306 MTP1306 75N03
Text: NTP75N03-06, NTB75N03-06 Power MOSFET 75 Amps, 30 Volts N-Channel TO-220 and D2PAK http://onsemi.com This 20 VGS gate drive vertical Power MOSFET is a general purpose part that provides the "best of design" available today in a low cost power package. This power MOSFET is designed to withstand , MARKING DIAGRAMS & PIN ASSIGNMENTS N-Channel 4 Drain 4 Drain D G 75 N03 -06 YWW 75 N03 -06 YWW S 1 Gate 3 Source 2 Drain 1 Gate 75N03-06 Y WW 2 Drain 3


Original
PDF NTP75N03-06, NTB75N03-06 O-220 NTP75N03-06/D SPICE QT 60 CIRCUIT DIAGRAMS MTB1306 MTP1306 75N03
2004 - 65N03

Abstract: No abstract text available
Text: NTD65N03R Product Preview Power MOSFET Features 25 V, 65 A, Single N-Channel, DPAK · · · · Low RDS(on) Ultra Low Gate Charge Low Reverse Recovery Charge Pb-Free Packages are Available http://onsemi.com V(BR)DSS 25 V RDS(on) TYP 7.0 mW @ 10 V 11.6 mW @ 4.5 V N-Channel D Value 25 "20 65 50 ID PD ID , 260 W A °C A mJ °C 1 Gate YWW 65 N03 4 Drain W A W A 1 2 Unit V V A S 4 G ID MAX 65 A Applications , DIAGRAMS & PIN ASSIGNMENTS 4 Drain YWW 65 N03 3 Source 1 Gate 3 Source 2 Drain Y = Year WW = Work Week


Original
PDF NTD65N03R NTD65N03/D 65N03
2009 - Panasonic SU-d50

Abstract: ic Panasonic Su-d50 IHLP-5050FD-ER2R2M01 6TPF IHLP5050FDER3R3M01 ISL9440C ISL9440BEVAL1Z ISL9440A ISL9440 CO42
Text: . OUTPUT CAP OUTPUT CAP OUTPUT CAP OR MOSFET OR MOSFET 7. Monitor overshoot and undershoot at , , SUD50N03-16P Q10 3. R12, R14, R16 are 10k resistors for discharging the MOSFET gates. 4. R13, R15 , . 2 1. Select a DPAK N channel MOSFET with VDSS breakdown > 20V. 1 Load Transient Circuit , 1 O PT, S D50 N03 - 16 P U VN I VI N1 100 u 35V 10 0u 35 V 10 u 35 V 1 00u , T, 1 S3 S2 S1 Visha y , P C han nel MOSFET , S 423 DY i4 Load Transient Circuit 3 3


Original
PDF ISL9440BEVAL1Z: ISL9440BEVAL1Z ISL944X ISL9440B. ISL9440B AN1454 Panasonic SU-d50 ic Panasonic Su-d50 IHLP-5050FD-ER2R2M01 6TPF IHLP5050FDER3R3M01 ISL9440C ISL9440A ISL9440 CO42
2004 - T70 N03

Abstract: t70n03
Text: NTD70N03R Power MOSFET 70 A, 25 V, N-Channel DPAK Features · · · · · Planar HD3e Process , °C/W W A °C mJ 1 2 S G MARKING DIAGRAMS 4 1 2 DPAK CASE 369AA Style 2 4 YWW T70 N03 2 1 3 Drain Gate Source 4 Drain YWW T70 N03 1 2 3 Gate Drain Source Package DPAK DPAK DPAK DPAK Straight Lead DPAK , ://onsemi.com 3 NTD70N03R POWER MOSFET SWITCHING Switching behavior is most easily modeled and predicted by recognizing that the power MOSFET is charge controlled. The lengths of various switching intervals


Original
PDF NTD70N03R NTD70N03R/D T70 N03 t70n03
2004 - t23 n03

Abstract: T23N03 NTD23N03RT4G
Text: NTD23N03R Power MOSFET 23 Amps, 25 Volts, N-Channel DPAK Features · · · · · · Pb-Free Packages are Available Planar HD3e Process for Fast Switching Performance Low RDS(on) to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching , DPAK CASE 369AA (Surface Mounted) STYLE 2 AYWW T23 N03 4 Drain DPAK-3 CASE 369D (Straight Lead) STYLE 2 AYWW T23 N03 1 2 3 Gate Drain Source T23N03 A Y WW = Device Code = Assembly Location = Year = Work Week


Original
PDF NTD23N03R NTD23N03R NTD23N03RG NTD23N03R-1 NTD23N03R-1G NTD23N03RT4 NTD23N03RT4G BRD8011/D. t23 n03 T23N03
2004 - T40 N03

Abstract: 40N03 T40N03 Code N03 diode t40 NTD40N03R
Text: NTD40N03R Power MOSFET 45 Amps, 25 Volts N-Channel DPAK Features · · · · · · Planar HD3e Process for Fast Switching Performance Low RDS(on) to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in High-Efficiency DC-DC Converters Pb-Free Packages are Available http://onsemi.com 45 AMPERES, 25 VOLTS RDS(on) = 12.6 mW (Typ , YWW T40 N03 4 Drain YWW T40 N03 3 Source 1 Gate 2 Drain 3 Source Publication Order Number: NTD40N03R/D


Original
PDF NTD40N03R NTD40N03R NTD40N03RG NTD40N03R-1 NTD40N03R-1G NTD40N03RT4 NTD40N03RT4G BRD8011/D. T40 N03 40N03 T40N03 Code N03 diode t40
2000 - mvc 043

Abstract: No abstract text available
Text: NTP75N03-06, NTB75N03-06 Power MOSFET 75 Amps, 30 Volts N­Channel TO­220 and D2PAK This 10 VGS gate drive vertical Power MOSFET is a general purpose part that provides the "best of design" available today in a low cost power package. Avalanche energy issues make this part an ideal design in. The , 4 1 MARKING DIAGRAMS & PIN ASSIGNMENTS 4 Drain 4 Drain E75 N03 ­06 YWW 1 Gate 3 Source E75 N03 ­06 YWW 1 Gate 2 Drain 3 Source 2 Drain N03 ­06 Y WW = Device Code = Year = Work Week


Original
PDF NTP75N03-06, NTB75N03-06 MTP1306 mvc 043
2003 - T70 N03

Abstract: "T70 N03" 369D mosfet transistor 400 volts.100 amperes transistor Marking code n03 NTD70N03RT4G NTD70N03RT4 NTD70N03R AN569 70N03
Text: NTD70N03R Power MOSFET 70 Amps, 25 Volts N-Channel DPAK Features · · · · · http , /8 from Case for 10 Seconds TL °C 260 4 Drain 1 2 3 YWW T70 N03 RqJC PD , YWW T70 N03 Thermal Resistance - Junction-to-Case Total Power Dissipation @ TC = 25°C Drain , NTD70N03R POWER MOSFET SWITCHING Switching behavior is most easily modeled and predicted by recognizing that the power MOSFET is charge controlled. The lengths of various switching intervals (Dt) are


Original
PDF NTD70N03R NTD70N03R/D T70 N03 "T70 N03" 369D mosfet transistor 400 volts.100 amperes transistor Marking code n03 NTD70N03RT4G NTD70N03RT4 NTD70N03R AN569 70N03
2004 - transistor Marking code n03

Abstract: T70 N03 dpak-3 MOSFET N 70N03 on 70n03 Simple test MOSFET Procedures d marking code dpak transistor 369D AN569 NTD70N03R
Text: NTD70N03R Power MOSFET 72 A, 25 V, N-Channel DPAK Features · · · · · Planar HD3e , an FR4 board using minimum recommended pad size. YWW T70 N03 3 DPAK CASE 369AA Style 2 2 1 3 Drain Gate Source 4 Drain YWW T70 N03 4 1 260 4 Drain 2 3 DPAK , NTD70N03R POWER MOSFET SWITCHING Switching behavior is most easily modeled and predicted by recognizing that the power MOSFET is charge controlled. The lengths of various switching intervals (Dt) are


Original
PDF NTD70N03R NTD70N03R/D transistor Marking code n03 T70 N03 dpak-3 MOSFET N 70N03 on 70n03 Simple test MOSFET Procedures d marking code dpak transistor 369D AN569 NTD70N03R
2003 - T70 N03

Abstract: "T70 N03" on 70n03 369D 70N03 AN569 NTD70N03R NTD70N03R-1 NTD70N03RT4
Text: NTD70N03R Power MOSFET 70 Amps, 25 Volts N-Channel DPAK Features · · · · http , 260 MARKING DIAGRAMS YWW T70 N03 VDSS Gate-to-Source Voltage - Continuous YWW T70 N03 Drain-to-Source Voltage D 2 3 DPAK CASE 369D Style 2 70N03 Y WW Device Code , ://onsemi.com 3 25 NTD70N03R POWER MOSFET SWITCHING Switching behavior is most easily modeled and predicted by recognizing that the power MOSFET is charge controlled. The lengths of various switching


Original
PDF NTD70N03R NTD70N03R/D T70 N03 "T70 N03" on 70n03 369D 70N03 AN569 NTD70N03R NTD70N03R-1 NTD70N03RT4
2004 - T70 N03

Abstract: t70n03 "T70 N03" on T70 N03 T70* n03 70N03 P NTD70N03RG -20/531 T70 n03
Text: NTD70N03R Power MOSFET 72 A, 25 V, N-Channel DPAK Features · · · · · Planar HD3e Process for Fast Switching Performance Low RDS(on) to Minimize Conduction Loss Low CISS to Minimize Driver Loss Low Gate Charge Pb-Free Packages are Available http://onsemi.com V(BR)DSS 25 V RDS(on) TYP 5.6 mW ID MAX 72 A MAXIMUM RATINGS (TJ = 25°C Unless otherwise specified) Parameter Drain-to-Source , N-Channel D S MARKING DIAGRAMS 4 4 Drain YWW T70 N03 2 1 3 Drain Gate Source 4 Drain YWW T70 N03 1 2


Original
PDF NTD70N03R 0E-05 0E-04 0E-01 NTD70N03R NTD70N03RG NTD70N03RT4 NTD70N03RT4G NTD70N03R-1 T70 N03 t70n03 "T70 N03" on T70 N03 T70* n03 70N03 P -20/531 T70 n03
2003 - MOSFET n03

Abstract: T70 N03 t70n03 70N03
Text: NTD70N03R Power MOSFET 70 Amps, 25 Volts N-Channel DPAK Features · · · · http://onsemi.com , Vdc °C/W W A A A A °C/W W A °C/W W A °C mJ 1 2 YWW T70 N03 1 2 3 Gate Drain Source Package DPAK DPAK , : NTD70N03R/D 4 1 2 DPAK CASE 369AA Style 2 YWW T70 N03 2 1 3 Drain Gate Source 4 Drain 3 G S 25 ±20 2.4 52.1 , Current versus Voltage http://onsemi.com 3 NTD70N03R POWER MOSFET SWITCHING Switching behavior is most easily modeled and predicted by recognizing that the power MOSFET is charge controlled. The


Original
PDF NTD70N03R 2500/Tape NTD70N03R/D 369AA NTD70N03R/D MOSFET n03 T70 N03 t70n03 70N03
2005 - Not Available

Abstract: No abstract text available
Text: NTD65N03R Power MOSFET 25 V, 65 A, Single N-Channel, DPAK Features · · · · Low RDS(on) Ultra Low Gate Charge Low Reverse Recovery Charge Pb-Free Packages are Available V(BR)DSS 25 V http://onsemi.com RDS(on) TYP 6.5 mW @ 10 V 9.7 mW @ 4.5 V N-Channel D ID MAX 65 A Applications · Desktop CPU , PIN ASSIGNMENTS 4 Drain YWW 65 N03 3 Source 1 Gate 3 Source 2 Drain Y = Year WW = Work Week 65N03 = , . © Semiconductor Components Industries, LLC, 2005 1 June, 2005 - Rev. 1 YWW 65 N03 2 Drain A


Original
PDF NTD65N03R NTD65N03R/D
2005 - NTD78N03

Abstract: No abstract text available
Text: NTD78N03 Power MOSFET 25 V, 78 A, Single N-Channel, DPAK Features · Low RDS(on) · Optimized Gate Charge · Pb-Free Packages are Available Applications http://onsemi.com V(BR)DSS 25 V RDS(on) TYP 4.6 @ 10 V 6.5 @ 4.5 V D ID MAX 78 A · Desktop VCORE · DC-DC Converters · Low Side Switch , 78 N03 3 Source 1 Gate 3 Source 2 Drain Y = Year WW = Work Week 78N03 = Device Code Publication Order , . © Semiconductor Components Industries, LLC, 2005 1 May, 2005 - Rev. 2 YWW 78 N03 2 Drain ORDERING


Original
PDF NTD78N03 NTD78N03/D
2005 - 78N03

Abstract: NTD78N03
Text: NTD78N03 Power MOSFET 25 V, 78 A, Single N-Channel, DPAK Features · Low RDS(on) · Optimized Gate Charge · Pb-Free Packages are Available Applications http://onsemi.com V(BR)DSS 25 V RDS(on) TYP 4.6 @ 10 V 6.5 @ 4.5 V D Value 25 "20 14.8 11.5 PD ID 2.3 11.4 8.8 PD ID 1.4 78 56 PD IDM IDmaxPkg dV/dt TJ, Tstg IS EAS 64 210 45 8.0 -55 to 175 78 722.5 W A A V/ns °C A mJ YWW 78 N03 4 Drain W A , YWW 78 N03 3 Source 1 Gate 3 Source 2 Drain Y = Year WW = Work Week 78N03 = Device Code Publication


Original
PDF NTD78N03 NTD78N03/D 78N03
2003 - t23 n03

Abstract: 23N03 369D NTD23N03R NTD23N03R-1 NTD23N03RT4
Text: NTD23N03R Power MOSFET 23 Amps, 25 Volts N-Channel DPAK Features · · · · · http://onsemi.com Planar HD3e Process for Fast Switching Performance Low RDS(on) to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in , DIAGRAM & PIN ASSIGNMENTS 4 Drain 1 Gate 23N03 Y WW 2 Drain YWW T23 N03 YWW T23 N03 1. When surface mounted to an FR4 board using 0.5 sq in pad size. 2. When surface mounted to


Original
PDF NTD23N03R NTD23N03R/D t23 n03 23N03 369D NTD23N03R NTD23N03R-1 NTD23N03RT4
2004 - T40 N03

Abstract: 40n03 T40-n03 T40N03 NTD40N03R 369AA 40n0 NTD40N03RT4G NTD40N03RT4 NTD40N03RG
Text: NTD40N03R Power MOSFET 45 Amps, 25 Volts N-Channel DPAK Features · · · · · · http://onsemi.com Planar HD3e Process for Fast Switching Performance Low RDS(on) to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in High-Efficiency DC-DC Converters Pb-Free Packages are Available 45 AMPERES, 25 VOLTS RDS(on) = 12.6 mW (Typ , YWW T40 N03 VDSS Gate-to-Source Voltage - Continuous YWW T40 N03 Drain-to-Source


Original
PDF NTD40N03R NTD40N03R/D T40 N03 40n03 T40-n03 T40N03 NTD40N03R 369AA 40n0 NTD40N03RT4G NTD40N03RT4 NTD40N03RG
2003 - 40n03

Abstract: T40N03 T40 N03 MOSFET n03 Diode MARKING t40 dpak 5 pin
Text: NTD40N03R Power MOSFET 40 Amps, 25 Volts N-Channel DPAK Features · · · · · · Planar HD3e Process for Fast Switching Performance Low RDS(on) to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in High-Efficiency DC-DC Converters Pb-Free Package May be Available. The G-Suffix Denotes a Pb-Free Lead Finish http://onsemi.com 40 , MARKING DIAGRAM & PIN ASSIGNMENTS 4 Drain YWW T40 N03 4 Drain YWW T40 N03 3 Source 1 Gate 2 Drain 40N03


Original
PDF NTD40N03R NTD40N03R/D 40n03 T40N03 T40 N03 MOSFET n03 Diode MARKING t40 dpak 5 pin
2005 - 65N03

Abstract: tl 72 oz 369D NTD65N03R NTD65N03RG NTD65N03RT4 NTD65N03RT4G
Text: NTD65N03R Power MOSFET 25 V, 65 A, Single N-Channel, DPAK Features · · · · Low RDS(on) Ultra Low Gate Charge Low Reverse Recovery Charge Pb-Free Packages are Available http://onsemi.com RDS(on) TYP V(BR)DSS Applications · Desktop CPU Power · DC-DC Converters · High and Low , Dissipation (RqJC) Power Dissipation (Note 1) S 45 1 4 Drain 4 Drain YWW 65 N03 Continuous Drain Current (RqJC) Limited by Wire TC = 85°C YWW 65 N03 Continuous Drain Current


Original
PDF NTD65N03R NTD65N03R/D 65N03 tl 72 oz 369D NTD65N03R NTD65N03RG NTD65N03RT4 NTD65N03RT4G
2005 - t14-n03

Abstract: 14n03 t14n03 T14 N03 DSA0032463 NTD14N03RT4G NTD14N03RT4 NTD14N03RG NTD14N03R 369D
Text: NTD14N03R Power MOSFET 14 Amps, 25 Volts N-Channel DPAK http://onsemi.com Features · · · · · · Planar HD3e Process for Fast Switching Performance Low RDS(on) to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements , Drain YWW T14 N03 4 Drain Maximum ratings are those values beyond which device damage can , size. YWW T14 N03 Parameter 3 Source 3 Source 1 Gate = Device Code = Year =


Original
PDF NTD14N03R NTD14N03R/D t14-n03 14n03 t14n03 T14 N03 DSA0032463 NTD14N03RT4G NTD14N03RT4 NTD14N03RG NTD14N03R 369D
Supplyframe Tracking Pixel