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Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
LT1158CN#TRPBF Linear Technology IC HALF BRDG BASED MOSFET DRIVER, PDIP16, 0.300 INCH, PLASTIC, DIP-16, MOSFET Driver
LT1158IS#TR Linear Technology IC 15 A HALF BRDG BASED MOSFET DRIVER, PDSO16, SOIC-16, MOSFET Driver
LT1160IN Linear Technology IC 1.5 A HALF BRDG BASED MOSFET DRIVER, PDIP14, 0.300 INCH, PLASTIC, DIP-14, MOSFET Driver
LTC4444-5IMS8E#TRPBF Linear Technology IC 1.75 A HALF BRDG BASED MOSFET DRIVER, PDSO8, LEAD FREE, PLASTIC, MSOP-8, MOSFET Driver
LT1158CN#TR Linear Technology IC HALF BRDG BASED MOSFET DRIVER, PDIP16, 0.300 INCH, PLASTIC, DIP-16, MOSFET Driver
LT1158IS Linear Technology IC 15 A HALF BRDG BASED MOSFET DRIVER, PDSO16, PLASTIC, SOL-16, MOSFET Driver

MOSFET 1200v 30a Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2009 - p623f

Abstract: 600V1200V p623
Text: high performance + hyper fast FRED 1200V 1200V 1200V 1200V 25A 25A 25A 25A with capacitor: MOS-FET P722-F64-PM P722-F74-PM high performance 600V 600V 30A 30A high speed IGBT , Standard- and high speed IGBT´s or MOS-FET Ultra low inductive design Vincotech - Power Flow Through for , 30A 30A high speed IGBT P623-F04-PM P623-F14-PM high performance 600 V 600 V 60A 60A , 1200V 1200V 1200V 1200V 25A 25A 25A 25A part – number V23990MOS-FET P622-F64-PM


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PDF V23990-P62x-Fxx-U-02-14 P623-F04-PM P623-F14-PM P623-F24-PM P624-F24-PM P625-F24-PM p623f 600V1200V p623
2009 - H-Bridge

Abstract: 600V1200V p623f
Text: fast FRED 1200V 1200V 1200V 1200V 25A 25A 25A 25A with capacitor: MOS-FET P722-F64-PM P722-F74-PM high performance 600V 600V 30A 30A high speed IGBT P723-F04-PM P723-F14-PM high , Standard- and high speed IGBT´s or MOS-FET Ultra low inductive design Vincotech - Power Flow Through for , fastPACK0-H V23990-P62x-Fxx-U-02-14 Module Types Voltage Current 600V 600V 30A 30A high , P729-F54-PM high performance P729-F56-PM high performance + hyper fast FRED 1200V 1200V 1200V 1200V


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PDF V23990-P62x-Fxx-U-02-14 P623-F04-PM P623-F14-PM P623-F24-PM P624-F24-PM P625-F24-PM P629-F44-U-02-14 H-Bridge 600V1200V p623f
2000 - transistor 12n60c

Abstract: 12N60c equivalent 30N120D1 13N50 equivalent MOSFET 1200v 30a MOSFET 1000v 30a 12n60c CS20-22MOF1 30n120d 12N60c MOSFET
Text: 1200V 1200V 1200V 150V 2x34A 2x30A 9A 17A 30A 30A 15A 30A 30A 60A 2x30A 0.85V 0.91V , , SCH FRED h e Wo Rs!!! T IFIE RECT PRODUCT PART NUMBER MOSFET IXFR 180N07 IXFR 180N085 , 105A 56A 71A 90A 105A 83A 48A 75A 13A 24A 30A 43A 48A 24A 37A 7.5A 13A 21A 28A 24A , 600V 600V 600V 600V 600V 600V 1200V 1200V 1200V 15A 48A 42A 45A 75A* 75A* 70A 70A , 40N60CD1 IXSR35N120B01 IXDR 30N120D1 600V 600V 600V 600V 600V 1200V 1200V 75A 42A 45A 70A


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PDF ISOPLUS247TM ISOPLUS247TM PLUS247TM-package FBO16-08N FBE22-06N1 21-05QC 22-08N 75-01F 21-08i01 transistor 12n60c 12N60c equivalent 30N120D1 13N50 equivalent MOSFET 1200v 30a MOSFET 1000v 30a 12n60c CS20-22MOF1 30n120d 12N60c MOSFET
2008 - tyco igbt module 25A

Abstract: 2kw pfc tyco igbt module 25A 1200V mosfet 600V 60A MOSFET 1200v 30a mosfet 600V 30A 2kw mosfet mosfet 1200V 40A V23990-P600-I19-PM IGBT Transistor 1200V, 25A
Text: ) V23990-P629-F56-PM1) 3) 600V 600V 600V 600V 600V 600V 600V 600V 600V 1200V 1200V 1200V 1200V 30A 30A 60A 60A 60A 60A 50A 75A 100A 25A 25A 25A 25A 400kHz 400kHz 250kHz 250kHz 250kHz , covers a broad power spectrum, ranging from 5A to 450A at 600V and 1200V . Vincotech Fast Power Modules are available in 2 different standard housings for up to 100A at 600V and 1200V and are suitable for switching frequencies of up to 400kHz at 600V and 50kHz at 1200V . fastPACK 0 H 2nd gen W W


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PDF Vincotech-012-0508 ISO9001 TS16949 tyco igbt module 25A 2kw pfc tyco igbt module 25A 1200V mosfet 600V 60A MOSFET 1200v 30a mosfet 600V 30A 2kw mosfet mosfet 1200V 40A V23990-P600-I19-PM IGBT Transistor 1200V, 25A
IRU1239SC

Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
Text: MTK MODULES 3 1200V 100.000A MTK MODULES 3 1200V 100.000A MTK MODULES 3 1600V 100.000A MTK MODULES , Phase Bridge in a INT-A-Pak package 3 1000V 3 Phase Bridge in a INT-A-Pak package 3 1200V 3 Phase Bridge in a INT-A-Pak package 3 1200V 3 Phase Bridge in a INT-A-Pak package 3 1400V 3 Phase Bridge in a , 1000V 3 Phase Bridge in a INT-A-Pak package 3 1200V 3 Phase Bridge in a INT-A-Pak package 3 1200V 3 , 110A Schottky Common Cathode Diode in a D6120 8-SM package 3 1200V 3 Phase Bridge in a INT-A-Pak


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PDF 100MT160PAPBF 100MT160PA 100MT160PBPBF IRU1239SC iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
2010 - 10-FZ06NBA075SA-P916L33

Abstract: No abstract text available
Text: Excellent performance for 1200V applications Dual Booster (IGBT) flowBOOST 0: Different applications , symmetric boosters equipped with MOSFET or IGBT switches. The table below lists the power modules we have , V23990-P629-F68-PM 1200V 2x 120mΩ 2x 40A Symmetric Booster (IGBT) • Semikron Equivalent CoolMOSTM , -FZ06NBA030SA-P914L33 Vincotech GmbH Biberger Straße 93 82008 Unterhaching Germany 2x 600V 2x 600V 30A CoolMOSTM + , -FZ06NBA075SA-P916L33 2x 600V 75A IGBT3 • 600V devices are used to provide 1200V total voltage capability at


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PDF V23990-P621-F68-PM V23990-P629-F68-PM 10-FZ06NBA075SA-P916L33
2014 - Not Available

Abstract: No abstract text available
Text: Current 100 170 30 1.6 2.3 IF = 30A , VR = 1200V di/dt =1200A/µs µA A 1.8 3 288 , APTMC120TAM33CTPAG VDSS = 1200V RDSon = 33mΩ max @ Tj = 25°C ID = 78A @ Tc = 25°C Triple phase leg SiC MOSFET Power Module Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • SiC Power MOSFET - High , • Low profile • RoHS Compliant APTMC120TAM33CTPAG Absolute maximum ratings (per SiC MOSFET


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PDF APTMC120TAM33CTPAG
2012 - 800V 40A mosfet

Abstract: mosfet 1200V 40A MOSFET 40A 600V APTMC60TLM55CT3AG
Text: APTMC60TLM55CT3AG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 55m @ Tj = 25°C Application · Uninterruptible Power Supplies Features · SiC Power MOSFET - Low , Thermal Resistance IF = 30A Test Conditions VR= 1200V Tj = 25°C Tj = 175°C Tc = 125°C Min 1200 Typ , = 30A , VR = 1200V di/dt =1500A/µs f = 1MHz, VR = 200V f = 1MHz, VR = 400V 0.50 °C/W , °C unless otherwise specified Q1 to Q4 Absolute maximum ratings (per SiC MOSFET ) Tc = 25°C Tc = 80


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PDF APTMC60TLM55CT3AG 800V 40A mosfet mosfet 1200V 40A MOSFET 40A 600V APTMC60TLM55CT3AG
2006 - 95A sensor hall

Abstract: celduc d31c2110 d31c2110 sensor hall 95A HALL 95A D41A3100L 95A magnetic sensor IGBT ac switch in SSR swt kw 11 7 1 16a 250vac ac SYNCHRONOUS MOTOR WIRING
Text: electromechanical. These relays are designed to switch current up to 30A without the need of heatsink. Relays with , current 30A 12-420VAC Control voltage I2t 20-30VDC 265A2s Protec. Dimensions mm , 1200V Control voltage Input R 4-30VDC 12-30VDC 5-30VDC I2t Protec. Dimensions mm , 600V 1200V Control voltage 4-30VDC 5-30VDC Input R Dimensions mm I2t 312A2s 312A2s , 24-510VAC 24-510VAC 24-510VAC 24-510VAC 24-510VAC Peak voltage 600V 600V 1200V 1200V 1200V


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2013 - Not Available

Abstract: No abstract text available
Text: °C Tj = 25°C Tj = 175°C IF = 30A , VR = 1200V di/dt =1500A/µs IF = 30A Max 96 168 30 1.6 , APTMC60TLM55CT3AG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 49mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS(on) - High temperature performance • • • • • • SiC , specified Q1 to Q4 Absolute maximum ratings (per SiC MOSFET ) IDM VGS RDSon PD Continuous Drain


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PDF APTMC60TLM55CT3AG
Electric Welding Machine diagram

Abstract: SWITCHING WELDING SCHEMATIC BY MOSFET welding machine diagram IGBT SCHEMATIC MOSFET FOR 100khz SWITCHING APPLICATIONS schematic welding machine igbt welding SWITCHING WELDING BY MOSFET igbt igbt 600V 30A datasheet
Text: InsulatedGate-Bipolar-Transistor (IGBT) was developed. Compared to the MOS-Field-Effect-Transistor ( MOSFET ) the IGBT has lower , welding machine and switch mode power supply. · The Fast IGBT in 600V and 1200V version is the best , 1200V IGBT³ will be the ideal power switch for the motor-drive Applications ­ with switching , and MOSFET . Fig. 1 shows the cross section of the PT IGBT. n+ emitter Al SiO2 E-Field , of the IGBT backside ­ the Collector ­ is the only difference compared to the MOSFET . Due to the


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PDF 10kHz O-247 TC100 O-220 SGP02N60HS SGP04N60HS SGP06N60HS SGP20N60HS SGW20N60HS SGP30N60HS Electric Welding Machine diagram SWITCHING WELDING SCHEMATIC BY MOSFET welding machine diagram IGBT SCHEMATIC MOSFET FOR 100khz SWITCHING APPLICATIONS schematic welding machine igbt welding SWITCHING WELDING BY MOSFET igbt igbt 600V 30A datasheet
2000 - mosfet 1200V 40A

Abstract: igbt 20A 1200v Igbts guide mosfet 1200V 30a smps HGTP20N60A4 HGTD3N60A4S HGTG11N120CND MOSFET 1200v 30a HGTD7N60B3S HGTD7N60A4S
Text: Industrial IGBT family features a range of 600V Punch Through And 1200V Non Punch Through (NPT). Solutions , MOSFET solutions are no longer needed when you can design-in the efficiency of an IGBT. - HGTP12N60B3 10 ~ 30A Low Voltage MOSFETs | Our industry leading line of IGBTs come with technical , available. - HGTG40N60C3 HGT1Y40N60C3D* On the reverse side, you'll find 1200V IGBT Selection , requirements. You provide the challenges, we'll provide the solutions. 1200V IGBT SELECTION GUIDE PACKAGE


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PDF LC-96585 O-252AA HGTD3N60A4S O-220AB O-263AB O-247 O-264AA O-268AA HGTD3N60C3S HGT1S3N60A4S* mosfet 1200V 40A igbt 20A 1200v Igbts guide mosfet 1200V 30a smps HGTP20N60A4 HGTD3N60A4S HGTG11N120CND MOSFET 1200v 30a HGTD7N60B3S HGTD7N60A4S
2014 - Not Available

Abstract: No abstract text available
Text: switching Speed is specked based on prototype test with the STGF3NC120HD 1200V IGBTs. 3. Maximum voltage is determined by the IGBT/ MOSFET used. The 1200V IGBTs that come standard with the board give it a 1200V standoff limit. The maximum recommended voltage is 1500V. Higher voltages may be used if the , switching applications requiring high voltage, low current loads. The installed 1200V IGBTs enable the device to act as a bidirectional, isolated relay with a standoff voltage of 1200V . The on-board driver


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RUR30120

Abstract: MOSFET 1200v 30a
Text: 1993 30A , 1200V Ultrafast Diode Features • Ultrafast with Soft Recovery.<11 Ons • Operating Temperature.175°C • Reverse Voltage Up To. 1200V , vF lF = 30A 2.1 V VF If = 30A ,Tc=150°C 1.9 V |R VR= 1200V 100 HA Ir VR= 1200V , Tc=150°C 1 mA lnn lF = 1A, dlp/dt = 100A/ns 110 ns lp = 30A , dlp/dt = 100A/ns - 150 ns tA lp = 30A , [VavlAVAVL - VDD)] Qi & Qz ARE 1000V MOSFET * Vavl \ 'L \ I / 12V FIGURE 7. AVALANCHE ENERGY TEST


OCR Scan
PDF RUR30120 110ns) 1-800-4-HARRIS RUR30120 MOSFET 1200v 30a
2007 - APT0406

Abstract: APT0502 APTM120DA68T1G
Text: APTM120DA68T1G VDSS = 1200V RDSon = 680m typ @ Tj = 25°C ID = 15A @ Tc = 25°C Boost chopper MOSFET Power Module 5 6 11 Application · · · CR1 3 4 Q2 NTC Features · 9 , Threshold Voltage Gate ­ Source Leakage Current Test Conditions Tj = 25°C VDS = 1200V VGS = 0V Tj = , DC Forward Current VF Diode Forward Voltage VR= 1200V Min 1200 Tj = 25°C Tj = 125°C Tc = 80°C Typ 100 500 trr Reverse Recovery Time IF = 30A VR = 800V Qrr Reverse


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PDF APTM120DA68T1G APT0406 APT0502 APTM120DA68T1G
Not Available

Abstract: No abstract text available
Text: APTM120DA68T1G VDSS = 1200V RDSon = 680mΩ typ @ Tj = 25°C ID = 15A @ Tc = 25°C Boost chopper MOSFET Power Module 5 6 11 Application • • • CR1 3 4 Q2 NTC , 25°C VDS = 1200V VGS = 0V Tj = 125°C VGS = 10V, ID = 12A VGS = VDS, ID = 2.5mA VGS = ±30 V , Maximum Reverse Leakage Current IF DC Forward Current VF Diode Forward Voltage VR= 1200V , IF = 30A VR = 800V Qrr Reverse Recovery Charge di/dt =200A/µs Tj = 125°C Tj = 25Â


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PDF APTM120DA68T1G
2007 - APT0406

Abstract: APT0502 APTM120SK56T1G mosfet 600V 30A
Text: APTM120SK56T1G VDSS = 1200V RDSon = 560m typ @ Tj = 25°C ID = 18A @ Tc = 25°C Buck chopper MOSFET Power Module 5 11 6 Application · · Q1 7 AC and DC motor control Switched Mode , Conditions Tj = 25°C VDS = 1200V VGS = 0V Tj = 125°C VGS = 10V, ID = 14A VGS = VDS, ID = 2.5mA VGS = , VR= 1200V Min 1200 Tj = 25°C Tj = 125°C Tc = 80°C Typ 100 500 trr Reverse Recovery Time IF = 30A VR = 800V Qrr Reverse Recovery Charge di/dt =200A/µs Tj = 125°C Tj = 25


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PDF APTM120SK56T1G APT0406 APT0502 APTM120SK56T1G mosfet 600V 30A
2007 - APT0406

Abstract: APT0502 APTM120DA56T1G
Text: APTM120DA56T1G VDSS = 1200V RDSon = 560m typ @ Tj = 25°C ID = 18A @ Tc = 25°C Boost chopper MOSFET Power Module 5 6 11 Application · AC and DC motor control · Switched Mode Power , Source Leakage Current Test Conditions Tj = 25°C VDS = 1200V VGS = 0V Tj = 125°C VGS = 10V, ID = , Diode Forward Voltage VR= 1200V Min 1200 Tj = 25°C Tj = 125°C Tc = 80°C Typ 100 500 trr Reverse Recovery Time IF = 30A VR = 800V Qrr Reverse Recovery Charge di/dt =200A


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PDF APTM120DA56T1G APT0406 APT0502 APTM120DA56T1G
Not Available

Abstract: No abstract text available
Text: APTM120SK68T1G VDSS = 1200V RDSon = 680mΩ typ @ Tj = 25°C ID = 15A @ Tc = 25°C Buck chopper MOSFET Power Module 5 11 6 Application • • Q1 7 AC and DC motor control , €“ Source Leakage Current Test Conditions Tj = 25°C VDS = 1200V VGS = 0V Tj = 125°C VGS = 10V, ID = , Diode Forward Voltage VR= 1200V Min 1200 Tj = 25°C Tj = 125°C Tc = 80°C Typ 100 500 trr Reverse Recovery Time IF = 30A VR = 800V Qrr Reverse Recovery Charge di/dt =200A


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PDF APTM120SK68T1G
Not Available

Abstract: No abstract text available
Text: APTM120DA56T1G VDSS = 1200V RDSon = 560mΩ typ @ Tj = 25°C ID = 18A @ Tc = 25°C Boost chopper MOSFET Power Module 5 6 11 Application • AC and DC motor control • Switched Mode , 25°C VDS = 1200V VGS = 0V Tj = 125°C VGS = 10V, ID = 14A VGS = VDS, ID = 2.5mA VGS = ±30 V , Maximum Reverse Leakage Current IF DC Forward Current VF Diode Forward Voltage VR= 1200V , IF = 30A VR = 800V Qrr Reverse Recovery Charge di/dt =200A/µs Tj = 125°C Tj = 25Â


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PDF APTM120DA56T1G
2007 - APT0406

Abstract: APT0502 APTM120SK68T1G
Text: APTM120SK68T1G VDSS = 1200V RDSon = 680m typ @ Tj = 25°C ID = 15A @ Tc = 25°C Buck chopper MOSFET Power Module 5 11 6 Application · · Q1 7 AC and DC motor control Switched Mode , Conditions Tj = 25°C VDS = 1200V VGS = 0V Tj = 125°C VGS = 10V, ID = 12A VGS = VDS, ID = 2.5mA VGS = , VR= 1200V Min 1200 Tj = 25°C Tj = 125°C Tc = 80°C Typ 100 500 trr Reverse Recovery Time IF = 30A VR = 800V Qrr Reverse Recovery Charge di/dt =200A/µs Tj = 125°C Tj = 25


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PDF APTM120SK68T1G APT0406 APT0502 APTM120SK68T1G
Not Available

Abstract: No abstract text available
Text: APTM120SK56T1G VDSS = 1200V RDSon = 560mΩ typ @ Tj = 25°C ID = 18A @ Tc = 25°C Buck chopper MOSFET Power Module 5 11 6 Application • • Q1 7 AC and DC motor control , €“ Source Leakage Current Test Conditions Tj = 25°C VDS = 1200V VGS = 0V Tj = 125°C VGS = 10V, ID = , Diode Forward Voltage VR= 1200V Min 1200 Tj = 25°C Tj = 125°C Tc = 80°C Typ 100 500 trr Reverse Recovery Time IF = 30A VR = 800V Qrr Reverse Recovery Charge di/dt =200A


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PDF APTM120SK56T1G
1998 - stepper motor driver full bridge 6A

Abstract: mosfet 600V 20A 600v 30a IGBT 20NB50 PSO-36 igbt to220 Motor Driver IC L293D Triac 3a 600v L298N IGBT full bridge
Text: BF3506TV /10TV BHA/K3012TV MSSxx / MDSxx Soft Start Thyristor 30-55A 1200V insulated Input Rect. Bridge - 600V/35A;1000V/35A Input Rect. Bridge - 1200V / 30A (3-ph.) Input Rect. Bridge - Thyristor - , , 3A IGBT TO220 600V, 7A IGBT TO220 600V, 20A Fast IGBT+Diode TO247 600V, 30A , IGBT TO-247 Mosfet 500V 15/20A high dV/dt Diode TO-247 Mosfet 500V 34A high dV/dt Diode Max247 Turboswitch A Ultra-Fast , High Efficiency Power Factor Controller 8/16 Bit MCU with 3 Multifunct. Timer for PWM Mosfet in TO247


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PDF BTW68/69 BF3506TV /10TV BHA/K3012TV 0-55A 00V/35A 000V/35A L4981A/B STW/Y/ExNA60 STTAxx06 stepper motor driver full bridge 6A mosfet 600V 20A 600v 30a IGBT 20NB50 PSO-36 igbt to220 Motor Driver IC L293D Triac 3a 600v L298N IGBT full bridge
Rad hard for Harris

Abstract: MOSFET 1200v 30a 32v smps RHRU100120 RHRG3060c mur1520 RURD420S RURP820C RURD620S RURG3020
Text: IGBTs Rectifiers MOSFET Drivers Space Systems Rad Hard MOSFETs Rad Hard ICs Transient , with breakdown voltages ranging from 200V to 1200V · Delivers a voltage drop as low as 0.975 volt , TO-247 30A MUR820 MUR1520 RURP3020 RURP820 RURP1520 .97V 35ns 1.05V 35ns 1.0V 50ns IF(AVG) 50A 30A 75A/80A IF(AVG) 75A/80A 100A 50A TO-252 SO8 150A RURG3020 NOTE , RURD860S 1.5V 70ns 1200V RURG3060 RURG5060 RURG8060 RURU5060 RURU8060 RURU10060


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PDF FO-011 1-800-4-HARRIS Rad hard for Harris MOSFET 1200v 30a 32v smps RHRU100120 RHRG3060c mur1520 RURD420S RURP820C RURD620S RURG3020
2002 - Not Available

Abstract: No abstract text available
Text: ISL9R18120G2, ISL9R18120P2, ISL9R18120S3S 18A, 1200V , STEALTH™ Diode Features • Stealth , 18A, 1200V , STEALTH™ Diode November 2013 Device Marking R18120G2 Device ISL9R18120G2 , -220, TO-263 2 www.fairchildsemi.com ISL9R18120G2, ISL9R18120P2, ISL9R18120S3S 18A, 1200V , 30A , 15A, 7.5A 0 200 0 3 300 100 ta AT dIF/dt = 200A/µs, 500A/µs, 800A/µs 0 tb AT IF = 30A , 15A, 7.5A 400 30 IRR, MAX REVERSE RECOVERY CURRENT (A) IRR, MAX REVERSE


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PDF ISL9R18120G2, ISL9R18120P2, ISL9R18120S3S ISL9R18120S3S O247-002.
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