The Datasheet Archive

Top Results (6)

Part ECAD Model Manufacturer Description Datasheet Download Buy Part
TK065U65Z TK065U65Z ECAD Model Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 38 A, 0.065 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
TK5R1P08QM TK5R1P08QM ECAD Model Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 84 A, 0.0051 Ohm@10V, DPAK Visit Toshiba Electronic Devices & Storage Corporation
TK190E65Z TK190E65Z ECAD Model Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 650 V, 0.19 Ω@10V, TO-220, DTMOS Visit Toshiba Electronic Devices & Storage Corporation
TK5R1A08QM TK5R1A08QM ECAD Model Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 70 A, 0.0051 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
TK155E65Z TK155E65Z ECAD Model Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 650 V, 0.155 Ω@10V, TO-220, DTMOS Visit Toshiba Electronic Devices & Storage Corporation
TK090U65Z TK090U65Z ECAD Model Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

MOSFET 1 KW Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2011 - Not Available

Abstract: No abstract text available
Text: V Peak output currents from external MOSFET driver GU1,GU2, GL1,GL2 1 A GL1-PGND1 , , HIGH-VIN QUAD-OUTPUT POWER SUPPLY Check for Samples: TPS43340-Q1 FEATURES 1 • • • â , Guidance With the Following Results: – Device Temperature Grade 1 : –40°C to 125°C Ambient , VOUT3 1 2 Please be aware that an important notice concerning availability, standard warranty , 50 40 POWER LOSS, SYNC = LOW 30 10 1 20 EFFICIENCY, SYNC = HIGH 10 0 0.0001


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PDF TPS43340-Q1 SLVSB16C 48-Pin
2011 - Not Available

Abstract: No abstract text available
Text: V Peak output currents from external MOSFET driver GU1,GU2, GL1,GL2 1 A GL1-PGND1 , , HIGH-VIN QUAD-OUTPUT POWER SUPPLY Check for Samples: TPS43340-Q1 FEATURES 1 • • • â , Guidance With the Following Results: – Device Temperature Grade 1 : –40° to C 125° Ambient , VOUT3 1 2 Please be aware that an important notice concerning availability, standard warranty , 50 40 POWER LOSS, SYNC = LOW 30 10 1 20 EFFICIENCY, SYNC = HIGH 10 0 0.0001


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PDF TPS43340-Q1 SLVSB16C 48-Pin
2006 - UC3842 smps design with TL431

Abstract: MC34063 Boost MOSFET mc34063 step down with mosfet computer schematic power supply circuit diagram circuit diagram of mosfet based smps power supply smps with uc3842 and tl431 mc34063 step up with mosfet g6351 atx power supply UC3842 diagram schematic diagram dc-dc flyback converter
Text: The Power MOSFET . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . , voltage. This is done by operating a bipolar transistor or MOSFET pass unit in its linear operating mode , waveform. This can be expressed as: Vout [ Vin @ duty cycle (eq. 1 ) The switching power supply , in Figure 1 . www.onsemi.com 5 SMPSRM LO SW Ion INDUCTOR CURRENT (AMPS) DIODE , Diode TIME Figure 1 . A Basic Forward-Mode Converter and Waveforms (Buck Converter Shown) clamped


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PDF July-2002 UC3842 smps design with TL431 MC34063 Boost MOSFET mc34063 step down with mosfet computer schematic power supply circuit diagram circuit diagram of mosfet based smps power supply smps with uc3842 and tl431 mc34063 step up with mosfet g6351 atx power supply UC3842 diagram schematic diagram dc-dc flyback converter
vfd schematics

Abstract: vfd circuit diagram vfd schematic diagram vfd CONTROL circuit diagram vfd -driver SUC75N04-04T LMV321M5 AN820 CRCW08052003F CRCW08052202F
Text: the high side using the SUB60N04-15LT temperature-sensing power MOSFET . +12 V +5 V R1 200 kW 1 % C3 0.1 mF R5, 18 kW IC1, LMV321 C1 560 pF R7 2.4 kW 1 % R3, 18 kW ­ R6, 560 W Gate , MOSFETs integrate an electrically isolated poly-silicon diode on the same die as the MOSFET (Figure 1 ). , Temperature (_C) FIGURE 1 . Structure of a Temperature Sensing Power MOSFET Document Number: 71621 13 , (A) 60 D1 G D2 T2 1 2 3 4 5 Notes: a. Package limited. S N-Channel MOSFET


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PDF AN820 VJ0805Y104JXAA SUB60N04-15LT LMV321M5 SC70-5 SUB50N04-07LT SUB50P05-13LT SUC75N04-04T 13-Jul-01 vfd schematics vfd circuit diagram vfd schematic diagram vfd CONTROL circuit diagram vfd -driver SUC75N04-04T LMV321M5 AN820 CRCW08052003F CRCW08052202F
12v and 5v regulated power supply circuit diagram

Abstract: VJ0805Y104JXA schematic power supply circuit diagram using ic POWER MOSFET CIRCUIT LMV321M5 1N5819M 929834-02-36-ND 20a power supply AN820 LMV321
Text: D T2 P-Channel MOSFET www.vishay.com 1 SiDB766761 Vishay Siliconix TEST SETUP (a , drops to 2.8 V because of voltage divider formed at the MOSFET gate Pin 1 , by resistors R6 and RG , U1 1 + R7 10 kW 1 % R3, 18 kW 5 3 C1 560 pF Signal Ground 2 2 D2 1N5819M C4 0.1 mF 25 V 4 2 LMV321M5 1 Screw LOAD Terminal Q1 2 1 LIMIT R2 22 kW 1 % J4 Gate 2 J2 1 3 R6, 560 W R4, 560 kW , 1 % Screw +12 V Terminal 2 R5, 18


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PDF SiDB766761 SUB60N04-15LT, SUB60N04-15LT LM2937IMP-5 OT-223 LMV321M5, SC70-5 929834-02-36-ND 12v and 5v regulated power supply circuit diagram VJ0805Y104JXA schematic power supply circuit diagram using ic POWER MOSFET CIRCUIT LMV321M5 1N5819M 929834-02-36-ND 20a power supply AN820 LMV321
2000 - MC44603P

Abstract: THOMSON B2 ferrite material orega transformer SMT4 flyback transformer construction ferrite thomson lcc orega flyback transformer mc44603 orega flyback transformers OREGA smt4 MTP6N60E equivalent
Text: the output and the MOSFET gate to make the switchings smoother. A resistor of about 1 kW can be , 3 10W 1 kW r2 4.7W Rs MOSFET drive Cz 1 F 47W Rs BIPOLAR transistor drive , ) NVo Vin NVo 2 L (Pin)max fosc IT is the MOSFET current. Pon + 1 3 L is the primary , L Maximum Peak Inductor Current fosc v (Ipk)max + (Pon)max + 1 3 Maximum Power Mosfet , E Figure 1 . Voltage Spikes Due to the Leakage Inductor The chosen MOSFET , is the MTP10N40E


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PDF AN1669/D MC44603 r14525 MC44603P THOMSON B2 ferrite material orega transformer SMT4 flyback transformer construction ferrite thomson lcc orega flyback transformer orega flyback transformers OREGA smt4 MTP6N60E equivalent
1998 - orega transformer SMT4

Abstract: MC44603P THOMSON B2 ferrite material orega flyback transformers orega flyback transformer MC44603 E-4215A orega transformer OREGA smt4 SMT4 former
Text: connected between the output and the MOSFET gate to make the switchings smoother. A resistor of about 1 kW , r1 22W Dz (3.3V) output 3 1 kW r2 4.7W Rs MOSFET drive Cz 1 µF 47W Rs , IT is the MOSFET current. t I Vin T L (Pon)max Ipk 2 L (eqn 4) + Ton 1 , Maximum Power Mosfet On­Time Losses Motorola Applications Data v2 (Pon)max + 1 3 Vin , 3 33.2W Now, 1 kW Rs (Ipk)max = 5.4A In addition, the (Vcs) clamp level is nearly 1


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PDF AN1669/D AN1669 MC44603 MC44603. orega transformer SMT4 MC44603P THOMSON B2 ferrite material orega flyback transformers orega flyback transformer E-4215A orega transformer OREGA smt4 SMT4 former
MF CAPACITOR

Abstract: MBR0520T1 10 mf capacitor IHLP2525 36 MF CAPACITOR MOSFET 1 KW VJ0805105KXXAT SIP 9 JP1 CRCW08051000FRT1 mf mosfet
Text: 25 kW Si9166 C7 100 pF C4 10 mF C6 0.1 mF R3 1 kW R2 49.9 kW 1 % C5 100 pF R6 3.9 kW C8 1000 pF JP 1 : PWM/­PSM to VIN for PWM mode. PWM/­PSM to PGND for PSM mode , 45.3 kW 1 % P4 1 FIGURE 1 . Schematics of Si9166 Buck PGND L1 P1 1 VIN P2 1.5 mH , C3 0.1 mF C4 10 mF R1 49.9 kW 1 % C6 270 pF C8 47 pF JP 1 : PWM/­PSM to VIN for , PGND for SHUTDOWN mode. *Optional R2 27.4 kW 1 % P4 1 FIGURE 2. Schematics of Si9166 Boost


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PDF Si9166DB Si9166 200-mA Si9165 VJ0805470KXXAT MBR0520T1 OD-123 IHLP2525 MF CAPACITOR MBR0520T1 10 mf capacitor IHLP2525 36 MF CAPACITOR MOSFET 1 KW VJ0805105KXXAT SIP 9 JP1 CRCW08051000FRT1 mf mosfet
CAPACITOR 330 NF

Abstract: MOSFET 1 KW C25Y5U1E106Z C25Y5U1E106ZP 47 mF 16 V capacitor 330 MF CAPACITOR DO3316P-472 LS4148 Si9160 Si9160DB
Text: Si6801 MOSFET provides efficiency up to 93% at 1 -MHz switching frequency. In the past, switching , ground on the input ground, and the Ch1 probe on pin 1 of the Si6801 (the MOSFET Figure 1 . 2 , Coilcraft 10 1 LF1 Si6801 High-Frequency MOSFET TSSOP-8 Siliconix 11 4 , AVX or Tokin 12 1 R1 10 kW Resistor, 10 kW 0603 Multi-Source 13 1 R10 3.6 kW Resistor, 3.6 kW 0603 Multi-Source 14 1 R11 1.5 kW Resistor, 1.5 kW


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PDF Si9160DB Si9160 Si6801 14-Jul-97 CAPACITOR 330 NF MOSFET 1 KW C25Y5U1E106Z C25Y5U1E106ZP 47 mF 16 V capacitor 330 MF CAPACITOR DO3316P-472 LS4148
capacitor 820 MF 4v

Abstract: VC-5810 HIP6301 2N7002 Si4768CY Si4770CY SiDB766702 MOSFET C65 CRCW0805000ZRT1
Text: preset with an R17 value of 137 k for 200-kHz operation. 100 Resistor ( kW ) VOUT 10 1 10 , MOSFET SOT-23 2N7002 Vishay Siliconix 3 4 R1, R2, R3, R4 0W 4 1 R21 10 W , Vishay Dale 5 2 R7, R11 6 5 R5, R6, R8, R9, R10 1 kW RES, 5% 1 /16 W 0603 CRCW0603102JRT1 Vishay Dale 10 kW RES, 5% 1 /16 W 0603 CRCW0603103JRT1 Vishay Dale 7 1 R19 15 kW RES, 5% 1 /16 W 0603 CRCW0603153JRT1 Vishay Dale 8 2 9 1 R17


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PDF SiDB766702 SO-16, SO-16 SiDB766702-68--With Si4768CY SiDB766702-70--With Si4770CY capacitor 820 MF 4v VC-5810 HIP6301 2N7002 MOSFET C65 CRCW0805000ZRT1
2013 - Not Available

Abstract: No abstract text available
Text: connection, must be tied to VOUT either directly or through a resistor ≤ 1 kW Source of MOSFET connected , DESCRIPTION Pin Name Function 1 , 9 VIN Drain of MOSFET (0.5 V – 13.5 V), Pin 1 must be , charged, external pull up resistor ≥ 1 kW to an external voltage source required; tie to GND if not , is an open−drain output that requires an external pull up resistor ≥ 1 kW to an external voltage , board using the minimum recommended pad size, 1 oz Cu. 4. Ensure that the expected operating MOSFET


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PDF NCP45522, NCP45523 NCP4552x NCP45522/D
2013 - ncp45

Abstract: DFN8 2X2 NCP45521-L NCP45521
Text: directly or through a resistor 1 kW NCP45520 - Active-high, open-drain output that indicates when the gate of the MOSFET is fully charged, external pull up resistor 1 kW to an external voltage source , , NCP45521 Table 1 . PIN DESCRIPTION Pin 1 , 9 2 Name VIN EN Function Drain of MOSFET (0.5 V ­ 13.5 V), Pin 1 , . NCP45520 only. PG is an open-drain output that requires an external pull up resistor 1 kW to an external , board using the minimum recommended pad size, 1 oz Cu. 4. Ensure that the expected operating MOSFET


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PDF NCP45520, NCP45521 NCP4552x NCP45520/D ncp45 DFN8 2X2 NCP45521-L
2013 - Not Available

Abstract: No abstract text available
Text: ‰¤ 1 kW No connect, internally floating but pin may be tied to VOUT Source of MOSFET connected to , VIN Drain of MOSFET (0.5 V – 13.5 V), Pin 1 must be connected to Pin 13 2 EN , ‰¥ 1 kW to an external voltage source required; tie to GND if not used. 7 BLEED 8 NC , an open−drain output that requires an external pull up resistor ≥ 1 kW to an external voltage , board using the minimum recommended pad size, 1 oz Cu. 4. Ensure that the expected operating MOSFET


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PDF NCP45540 NCP45540 NCP45540/D
2013 - Not Available

Abstract: No abstract text available
Text: indicates when the gate of the MOSFET is fully charged, external pull up resistor 1 kW to an external , directly or through a resistor 1 kW Source of MOSFET connected to load Table 2. ABSOLUTE MAXIMUM , DESCRIPTION Pin 1 , 13 2 Name VIN EN Function Drain of MOSFET (0.5 V ­ 13.5 V), Pin 1 must be connected to Pin , resistor 1 kW to an external voltage source. 2. Surface-mounted on FR4 board using 1 sq-in pad, 1 oz Cu. 3 , charged, requires an external pull up resistor 1 kW to an external voltage source, VTERM. 13. See


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PDF NCP45560 NCP45560/D
2015 - Not Available

Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 1N60- KW Power MOSFET 1A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 1N60- KW is a high voltage MOSFET and is designed to have better characteristics, such , D S G D S Packing Tape Reel Tube Tape Box Bulk 1 of 7 QW-R205-054.C 1N60- KW ï , ., LTD www.unisonic.com.tw 2 of 7 QW-R205-054.C 1N60- KW ■Power MOSFET ABSOLUTE MAXIMUM , °С/W °С/W 3 of 7 QW-R205-054.C 1N60- KW  Power MOSFET ELECTRICAL CHARACTERISTICS


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PDF 1N60-KW 1N60-KW QW-R205-054
1997 - CAPACITOR 330 NF

Abstract: MOSFET 1 KW DO3316P-472 LS4148 Si9160 Si9160DB TSSOP-16
Text: Si6801 MOSFET provides efficiency up to 93% at 1 -MHz switching frequency. In the past, switching , ground, and the Ch1 probe on pin 1 of the Si6801 (the MOSFET Figure 1 . 2 Ch1 ­ Drain to ground , -472 Inductor, 4.7 mH SMDL Coilcraft 10 1 LF1 Si6801 High-Frequency MOSFET TSSOP , AVX 12 1 R1 10 kW Resistor, 10 kW 0603 Multi-Source 13 1 R10 3.6 kW Resistor, 3.6 kW 0603 Multi-Source 14 1 R11 1.5 kW Resistor, 1.5 kW 0603


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PDF Si9160DB Si9160 Si6801 in0603 07-Feb-97 CAPACITOR 330 NF MOSFET 1 KW DO3316P-472 LS4148 TSSOP-16
2009 - Not Available

Abstract: No abstract text available
Text: 10 Auto-Skip 1 VIN = 12 V RRF = 470 kW 300 250 200 6 8 10 12 14 16 18 20 22 VIN ­ Input , VIN = 12 V RRF = 200 kW 0.1 0.001 0.01 0.1 1 10 100 10 Auto-Skip 1 VIN = 12 V RRF = 100 kW 0.1 , FCCM 10 Auto-Skip 1 VIN = 12 V RRF = 39 kW 0.1 0.001 0.01 0.1 1 10 100 VOUT ­ Output Voltage ­ V 100 1.11 1.10 1.09 VIN = 12 V RRF = 470 kW 1.08 0.001 0.01 0.1 1 10 100 IOUT ­ Output , of the low-side MOSFET at ground as close as possible. (Refer to loop # 1 of Figure 19) ­ The second


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PDF TPS51218 SLUS935 100-ns
2009 - Not Available

Abstract: No abstract text available
Text: 10 Auto-Skip 1 VIN = 12 V RRF = 470 kW 300 250 200 6 8 10 12 14 16 18 20 22 VIN ­ Input , VIN = 12 V RRF = 200 kW 0.1 0.001 0.01 0.1 1 10 100 10 Auto-Skip 1 VIN = 12 V RRF = 100 kW 0.1 , FCCM 10 Auto-Skip 1 VIN = 12 V RRF = 39 kW 0.1 0.001 0.01 0.1 1 10 100 VOUT ­ Output Voltage ­ V 100 1.11 1.10 1.09 VIN = 12 V RRF = 470 kW 1.08 0.001 0.01 0.1 1 10 100 IOUT ­ Output , of the low-side MOSFET at ground as close as possible. (Refer to loop # 1 of Figure 19) ­ The second


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PDF TPS51218 SLUS935 100-ns
2010 - NCP3125

Abstract: NCP3125ADR2G marking 162r smd 0806 resistor footprint vfd circuit diagram 2.7 kw 47uf, 25v electrolytic capacitor footprint 2N7002E MMBT3904 MMSD4148T1G c1 10uf 16v
Text: (on) External Soft-Start 10 mA * 21 kW 50 mW (eq. 1 ) IOCSET = Sourced current IOCth = , OUT @ D@ 1 ) ra 2 12 (eq. 23) IRMS_HS = High side MOSFET RMS current IOUT = , dissipated only in the high-side MOSFET . 2 P DS + 1 @ C OSS @ V IN @ F SW 2 = RMS current in the low , 2p 0.96 nF + RF ) R2 R 1 f cross (eq. 40) 31.6 kW ) 10 kW 31.6 kW 2p CF , PO R1 gm ³ (eq. 42) 1 10 kW 1.152 kHz 10 kW ) 31.6 kW 4 ms = Compensation


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PDF NCP3125 NCP3125 NCP3125/D NCP3125ADR2G marking 162r smd 0806 resistor footprint vfd circuit diagram 2.7 kw 47uf, 25v electrolytic capacitor footprint 2N7002E MMBT3904 MMSD4148T1G c1 10uf 16v
2010 - NCP3125

Abstract: smd 0806 resistor footprint
Text: R DS(on) ³ 4.2 A + 10 mA * 21 kW 50 mW (eq. 1 ) Figure 17. Enable/Disable Driver State Diagram , and low-side MOSFETs, but are dissipated only in the high-side MOSFET . 2 P DS + 1 @ C OSS @ V IN @ F , NCP3125 RC + 1 2 2 ) fcross C OUT (eq. 43) 2 F LC CC CO ESR 1 1.322 kW + 2 3.102 , 4.7 5.6 6.8 1.8 2.7 2.7 3.3 3.3 RF ( kW ) X 20 20 20 20 20 20 20 20 20 20 20 Cf (nF) X 1 1 1 1 1 1 1 1 1 1 1 Cc (nF) 150 100 100 120 82 68 47 68 56 39 33 27 Rc ( kW ) 0.243 0.412 0.487 0.806 1.07 1.4 1.96


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PDF NCP3125 NCP3125/D smd 0806 resistor footprint
2011 - 06033D105KAT

Abstract: 06033D105 NCP3127 DIODE 40c 0649 NCP3127ADR2G SMD marking DHS Dale Resistor rcr 06035a821jat2a
Text: resistance of the low side MOSFET RSET = Current set resistor The RSET values range from 5 kW to 55 kW . If , 3.5 OUTPUT CURRENT (A) 3 2.5 2 1.5 1 0.5 0 5 10 15 20 RSET ( kW ) 25 30 5.0 V 12 V BG TG BG , R DS(on) ³ 2.0 A + 10 mA * 21 kW 105 mW (eq. 1 ) In case of an overload, the low-side (LS) FET , MOSFETs, but are dissipated only in the high-side MOSFET . 2 P DS + 1 @ C OSS @ V IN @ F SW 2 FSW IOUT , ://onsemi.com 16 NCP3127 RC + 1 2 2 ) fcross C OUT (eq. 43) 2 F LC CC CO ESR 1 2.9 kW +


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PDF NCP3127 NCP3127/D 06033D105KAT 06033D105 DIODE 40c 0649 NCP3127ADR2G SMD marking DHS Dale Resistor rcr 06035a821jat2a
2000 - LMV321

Abstract: LMV331 SUB60N04-15LT
Text: 1 % C3 0.1 mF R5, 18 kW IC1, LMV321 C1 560 pF R3, 18 kW R7 10 kW 1 % R6, 560 W ­ Gate Output Signal + R4, 560 kW , 1 % INPUT R2 22 kW 1 % SUB60N04-15LT C2 0.1 mF , 0.1 mF R1 180 kW 1 % C3 0.1 mF R5 10 kW DRIVER IN IC1, LMV331 R3, 18 kW R6 10 kW 1 % ­ ENABLE + R4, 560 kW , 1 % R2 22 kW 1 % SUB60N04-15LT C1 560 pF , SUB60N04-15LT New Product Vishay Siliconix Temperature Sensing MOSFET , N-Channel 40-V (D-S


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PDF SUB60N04-15LT 000-V SUB60N04-15LT 15-mW OT-23 SC-70) LMV331 S-00718--Rev. 03-Apr-00 LMV321 LMV331
2003 - MOSFET driver 175C

Abstract: SUM60N04-12LT LMV321 LMV331 PROTECTED MOSFET
Text: circuit to shutdown the MOSFET . +5 V R1 180 kW 1 % C3 0.1 mF R5 10 kW IN IC1, LMV331 C1 560 pF R3, 18 kW R6 10 kW 1 % - DRIVER ENABLE + R4, 560 kW , 1 % R2 22 kW 1 , V R1 180 kW 1 % C3 0.1 mF R5, 18 kW IC1, LMV321 C1 560 pF INPUT R3, 18 kW R7 10 kW 1 % R6, 560 W - Gate Output Signal + R4, 560 kW , 1 % R2 22 kW 1 % SUM60N04 , shown in Figure 1 . Here a LMV321 operational amplifier is used to drive the MOSFET , and as a


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PDF SUM60N04-12LT SUM60N04-12LT 15-mW OT-23 SC-70) LMV331 SUB60N04-15LT S-32523--Rev. 08-Dec-03 MOSFET driver 175C LMV321 LMV331 PROTECTED MOSFET
2011 - vfd circuit diagram 2.7 kw

Abstract: smd 0806 resistor footprint
Text: R DS(on) ³ 4.2 A + 10 mA * 21 kW 50 mW (eq. 1 ) Figure 17. Enable/Disable Driver State Diagram , voltage = MOSFET gate threshold voltage Q GD + Q GD I RMS_LS + I OUT @ 2 ( 1 * D) @ 1 ) ra 12 , in the high-side MOSFET . 2 P DS + 1 @ C OSS @ V IN @ F SW 2 FSW IOUT NOLHL NOLLH PBODY VFD = , compensation network as follows: CC + 84 nF + 1 F PO 1 1.152 kHz R2 R2 R1 gm ³ (eq. 42) 10 kW 10 kW ) 31.6 , 1 2 2 ) fcross C OUT (eq. 43) 2 F LC CC CO ESR 1 1.355 kW + 2 3.102 kHz


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PDF NCP3125 NCP3125/D vfd circuit diagram 2.7 kw smd 0806 resistor footprint
2010 - NCP3127

Abstract: 06035C683JAT2A 4.7 MF 50v CAPACITOR SMD 47uf, 25v electrolytic capacitor footprint ELECTROLYTIC capacitor, .10uF 50V 2N7002E EMZA160ADA471MHA0G MMBT3904 MMSD4148T1G MSS1278
Text: Description 1 PGND The PGND pin is the high current ground pin for the low-side MOSFET and the , the OCP fault as shown in Figure 20. 10 mA * 21 kW 105 mW (eq. 1 ) http://onsemi.com 8 , high-side and low-side MOSFETs, but are dissipated only in the high-side MOSFET . 2 P DS + 1 @ C OSS @ V , 2p 239 pF + R F ) R2 R 1 fcross (eq. 40) 31.6 kW ) 10 kW 31.6 kW 2p CF fcross , R2 ³ R2 R1 gm ³ (eq. 42) 1 10 kW 16.86 kHz 10 kW ) 31.6 kW 4 ms =


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PDF NCP3127 NCP3127 NCP3127/D 06035C683JAT2A 4.7 MF 50v CAPACITOR SMD 47uf, 25v electrolytic capacitor footprint ELECTROLYTIC capacitor, .10uF 50V 2N7002E EMZA160ADA471MHA0G MMBT3904 MMSD4148T1G MSS1278
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