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SCT3017ALHR SCT3017ALHR ECAD Model ROHM Semiconductor 650V, 118A, THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive
SCT3030KLHR SCT3030KLHR ECAD Model ROHM Semiconductor 1200V, 72A, THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive
SCT3080ALHR SCT3080ALHR ECAD Model ROHM Semiconductor 650V, 30A, THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive
SCT3022ALHR SCT3022ALHR ECAD Model ROHM Semiconductor 650V, 93A, THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive
SCT3040KLHR SCT3040KLHR ECAD Model ROHM Semiconductor 1200V, 55A, THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive
SCT2080KEHR SCT2080KEHR ECAD Model ROHM Semiconductor 1200V, 40A, THD, Silicon-carbide (SiC) MOSFET for Automotive
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Advantech Co Ltd
MOS-2120-Z1101E Advantech MOS-2120-Z1101E - Network adapter - PCIe Mini Card - Gigabit Ethernet x 1
MOS-2120-Z1101E ECAD Model
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MOS-2120-Z1101E datasheet (1)

Part ECAD Model Manufacturer Description Type PDF
MOS-2120-Z1101E MOS-2120-Z1101E ECAD Model Advantech Uncategorized - Miscellaneous - GIGA LAN ETHERNET MODULE 1-CH Original PDF

MOS-2120-Z1101E Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2009 - 0 281 002 917

Abstract: 30 002 13,6.3 0 281 002 845
Text: 21.18 21.19 21.19 21.20 21.20 21.21 21.22 21.23 -16.7 -17.4 -18.0 -18.9 -19.3 -19.6 -19.9 -20.1 -20.7


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PDF MOS-924-119+ CZ682 2002/95/EC) 0 281 002 917 30 002 13,6.3 0 281 002 845
2009 - PL-023

Abstract: No abstract text available
Text: 0.99 1.09 1.23 1.27 0.57 0.69 0.80 0.94 0.98 21.20 21.20 21.21 21.22 21.23 -22.4


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PDF MOS-924-119+ CZ682 2002/95/EC) PL-023
J406

Abstract: J248 J425 ultrarf UPF2245 J242
Text: 2120 2130 2140 2150 20.00 2170 2160 f, Frequency (MHz) Capacitance vs Drain , 26.5V lDQ = 480mA Frequency (MHz) 14 Z Source 2100 2120 2140 2160 2180 2200 1.33


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PDF UPF2245 30dBc J406 J248 J425 ultrarf UPF2245 J242
J427

Abstract: ultrarf UPF2225 J437 J417
Text: 240 mA POUT = 44.0 dBm 7.00 2110 2120 2130 2140 2150 2160 35.0 2170 f , 2100 2120 2140 2160 2180 2200 1.51 1.50 1.49 1.48 1.47 1.46 - Z Load j4.43 j4


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PDF UPF2225 30dBc J427 ultrarf UPF2225 J437 J417
2002 - j686

Abstract: No abstract text available
Text: = 1600 mA, f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz) Drain Efficiency (VDD = 28 Vdc, Pout = 125 W PEP, IDQ = 1600 mA, f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz) Intermodulation Distortion (VDD = 28 Vdc, Pout = 125 W PEP, IDQ = 1600 mA, f1 = 2110 MHz, f2 = 2120 MHz and f1 = , (dB) 50 40 35 30 25 20 15 10 5 0 2080 2100 2120 2160 2140 f, FREQUENCY (MHz) 2180 0 -5 -10 -15 -20 , 28 Vdc IDQ = 1600 mA f = 2120 MHz Pout P3dB = 156 W 46 42 38 34 30 26 22 18 P1dB = 135 W


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PDF dB110 MRF21125 MRF21125S MRF21125SR3 j686
2007 - Not Available

Abstract: No abstract text available
Text: , f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz) Drain Efficiency (VDD = 28 Vdc, Pout = 125 W PEP, IDQ = 1600 mA, f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz) Intermodulation Distortion (VDD = 28 Vdc, Pout = 125 W PEP, IDQ = 1600 mA, f1 = 2110 MHz, f2 = 2120 MHz and f1 = , 5 0 2080 2100 2140 2120 2160 f, FREQUENCY (MHz) 2180 IMD 0 -5 -10 -15 -20 Gps -25 -30 -35 -40 2200 , 2120 MHz Pout P3dB = 156 W 46 42 38 34 30 26 22 18 IRL VDD = 28 Vdc Pout = 125 W (PEP) IDQ =


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PDF MRF21125R3 MRF21125SR3
2000 - MRF21125

Abstract: 465B MRF21125S
Text: MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz) Gps - 12 - dB Drain Efficiency (VDD = 28 Vdc, Pout = 125 W PEP, IDQ = 1600 mA, f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz , PEP, IDQ = 1600 mA, f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz) IMD - , = 2120 MHz , DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB) Pout , OUTPUT POWER (WATTS) ­45 , IMD ­35 5 0 2080 Figure 5. CW Performance 2100 2140 2120 2160 f, FREQUENCY (MHz


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PDF MRF21125/D MRF21125 MRF21125S MRF21125 465B MRF21125S
2003 - n channel MOSFET 45 w 10 v

Abstract: No abstract text available
Text: , f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz) Drain Efficiency (VDD = 28 Vdc, Pout = 125 W PEP, IDQ = 1600 mA, f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz) Intermodulation Distortion (VDD = 28 Vdc, Pout = 125 W PEP, IDQ = 1600 mA, f1 = 2110 MHz, f2 = 2120 MHz and f1 = , 2120 2160 2140 f, FREQUENCY (MHz) 2180 0 -5 -10 -15 -20 Gps -25 -30 -35 -40 2200 160 Pout , OUTPUT POWER (WATTS) 144 128 112 96 80 64 48 32 16 0 VDD = 28 Vdc IDQ = 1600 mA f = 2120 MHz Pout P3dB =


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PDF MRF21125S MRF21125SR3 MRF21125 n channel MOSFET 45 w 10 v
2000 - Not Available

Abstract: No abstract text available
Text: 28 Vdc, Pout = 125 W PEP, IDQ = 1600 mA, f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz) Drain Efficiency (VDD = 28 Vdc, Pout = 125 W PEP, IDQ = 1600 mA, f1 = 2110 MHz, f2 = 2120 MHz and , mA, f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz) TYPICAL CW PERFORMANCE , 2100 2140 2120 2160 f, FREQUENCY (MHz) 2180 IMD 0 ­5 ­10 ­15 ­20 Gps ­25 ­30 ­35 ­40 2200 160 Pout , OUTPUT POWER (WATTS) 144 128 112 96 80 64 48 32 16 0 0 VDD = 28 V IDQ = 1600 mA f = 2120 MHz Pout


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PDF MRF21125/D MRF21125 MRF21125S
MOS-2170-419

Abstract: No abstract text available
Text: Voltage Controlled Oscillator Typical Performance Data MOS-2170-419+ Frequency and Tuning Sensitivity Power Output 2300 30 28 FREQ. @ +25°C 4.0 Output Power (dBm) Tuning Sensitivity (MHz/V) T.SENS @ +25°C Frequency (MHz) -55°C +25°C FREQ. @ +85°C 2260 4.5 26 FREQ. @ -55°C 2280 5.0 2240 24 2220 22 2200 20 2180 18 2160 16 2140 14 1.0 2120 12 0.5 2100 10 +85°C 0.0 0 1 2 3 4 5 6


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PDF MOS-2170-419+ MOS-2170-419
2001 - j686

Abstract: No abstract text available
Text: = 1600 mA, f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz) Drain Efficiency (VDD = 28 Vdc, Pout = 125 W PEP, IDQ = 1600 mA, f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz) Intermodulation Distortion (VDD = 28 Vdc, Pout = 125 W PEP, IDQ = 1600 mA, f1 = 2110 MHz, f2 = 2120 MHz and f1 = , EFFICIENCY (%), G ps , POWER GAIN (dB) 50 40 35 30 25 20 15 10 5 0 2080 2100 2140 2120 2160 f, FREQUENCY (MHz , 80 64 48 32 16 0 0 VDD = 28 V IDQ = 1600 mA f = 2120 MHz Pout 46 42 38 P3dB = 156 W 34 30


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PDF MRF21125 MRF21125S j686
2001 - MRF21045

Abstract: No abstract text available
Text: 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz) Two­Tone Drain Efficiency (VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 500 mA, f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz) Intermodulation Distortion (VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 500 mA, f1 = 2110 MHz, f2 = 2120 MHz and f1 = , 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz) Pout, 1 dB Compression Point (VDD = 28 Vdc


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PDF MRF21045 MRF21045S
2002 - mosfet 400 mhz

Abstract: MRF21045
Text: 500 mA, f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz) Two­Tone Drain Efficiency (VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 500 mA, f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz) Intermodulation Distortion (VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 500 mA, f1 = 2110 MHz, f2 = 2120 , 500 mA, f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz) Pout, 1 dB Compression Point


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PDF MRF21045 MRF21045R3 MRF21045S MRF21045SR3 mosfet 400 mhz
1999 - Not Available

Abstract: No abstract text available
Text: =480mA Po=44.0dBm 25.00 5 2110 2120 2130 2140 f, Frequency (MHz) 2150 2160 20.00 , Frequency MHz 2100 2120 2140 2160 2180 2200 Z Source 1.33 - j4.25 1.31 - j4.20 1.29 - j4.15 1.28 - j4


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PDF SL-4522 SL-4522 SL-45221 SL-45222
1999 - Not Available

Abstract: No abstract text available
Text: =44.0dBm 40.0 7.00 2110 2120 2130 2140 f, Frequency (MHz) 2150 2160 35.0 2170 70 60 C , LDMOS Frequency MHz 2100 2120 2140 2160 2180 2200 Z Source 1.51 - j4.43 1.50 - j4.37 1.49 - j4


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PDF SL-2522 SL-2522 SL-25221 SL-25222 SL-25222 SL25221 SL25222 EDS-100945
1999 - s 452-2

Abstract: No abstract text available
Text: =480mA Po=44.0dBm 25.00 5 2110 2120 2130 2140 f, Frequency (MHz) 2150 2160 20.00 , Enhancement Mode LDMOS Frequency MHz 2100 2120 2140 2160 2180 2200 Z Source 1.33 - j4.25 1.31 - j4


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PDF SL-4522 SL-4522 SL-45221 SL-45222 SL45221 SL45222 EDS-100946 s 452-2
2003 - motorola 5373

Abstract: MRF21045
Text: Common­Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 500 mA, f1 = 2110 MHz, f2 = 2120 MHz , mA, f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz) Intermodulation Distortion (VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 500 mA, f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz) Two­Tone Input Return Loss (VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 500 mA, f1 = 2110 MHz, f2 = 2120 MHz and


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PDF MRF21045R3 MRF21045SR3 motorola 5373 MRF21045
1999 - ad2100

Abstract: TRANSISTOR J427 SL-25221
Text: 8.00 Vdd=26.5V Idq=240mA Po=44.0dBm 7.00 2110 2120 2130 2140 2150 2160 , .09 2120 1.50 - j4.37 0.43 - j1.00 2140 1.49 - j4.32 0.39 - j0.90 2160 1.48 - j4


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PDF SL-2522 SL-2522 SL-25222 SL-25221 ad2100 TRANSISTOR J427 SL-25221
2007 - Not Available

Abstract: No abstract text available
Text: 90 W PEP, IDQ = 1000 mA, f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz) Two - Tone Drain Efficiency (VDD = 28 Vdc, Pout = 90 W PEP, IDQ = 1000 mA, f1 = 2110 MHz, f2 = 2120 MHz and f1 = , 1000 mA, f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz) Input Return Loss (VDD = 28 Vdc, Pout = 90 W PEP, IDQ = 1000 mA, f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz) Pout, 1


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PDF MRF21085R3 MRF21085LSR3
2002 - J176 equivalent

Abstract: MRF21085S MRF21085
Text: , IDQ = 1000 mA, f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz) Two­Tone Drain Efficiency (VDD = 28 Vdc, Pout = 90 W PEP, IDQ = 1000 mA, f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 , 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz) Input Return Loss (VDD = 28 Vdc, Pout = 90 W PEP, IDQ = 1000 mA, f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz) Pout, 1 dB


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PDF MRF21085 MRF21085S MRF21085SR3 MRF21085LS MRF21085LSR3 J176 equivalent
1999 - s 452-2

Abstract: J406 dual 4522 TRANSISTOR J406 SL-45221 SL-45222
Text: 2120 2130 2140 2150 2160 , Efficiency (%) Gpe, Power Gain (dB) 9 25.00 20.00 , L o ad 2100 1.33 - j4.25 0.70 - j2.68 2120 1.31 - j4.20 0.69 - j2.61 2140


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PDF SL-4522 SL-4522 SL-45222 SL-45221 s 452-2 J406 dual 4522 TRANSISTOR J406 SL-45221 SL-45222
2003 - MOTOROLA J210

Abstract: MRF21085
Text: Gain (VDD = 28 Vdc, Pout = 90 W PEP, IDQ = 1000 mA, f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 , , f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz) Two­Tone Intermodulation Distortion (VDD = 28 Vdc, Pout = 90 W PEP, IDQ = 1000 mA, f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz) Input Return Loss (VDD = 28 Vdc, Pout = 90 W PEP, IDQ = 1000 mA, f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz


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PDF MRF21085 MRF21085R3 MRF21085SR3 MRF21085LSR3 MOTOROLA J210
2007 - wb4 marking

Abstract: J152 mosfet transistor 2110 transistor
Text: 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz) Two - Tone Drain Efficiency (VDD = 28 Vdc, Pout = 170 W, IDQ = 2 x 850 mA, f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz) Two - Tone Intermodulation Distortion (VDD = 28 Vdc, Pout = 170 W, IDQ = 2 x 850 mA, f1 = 2110 MHz, f2 = 2120 , 2 x 850 mA, f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz) Pout, 1 dB Compression


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PDF MRF21180R6 wb4 marking J152 mosfet transistor 2110 transistor
2001 - MRF21085

Abstract: No abstract text available
Text: , f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz) Two­Tone Drain Efficiency (VDD = 28 Vdc, Pout = 90 W PEP, IDQ = 1000 mA, f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz) Two­Tone Intermodulation Distortion (VDD = 28 Vdc, Pout = 90 W PEP, IDQ = 1000 mA, f1 = 2110 MHz, f2 = 2120 MHz and f1 = , , f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz) Pout, 1 dB Compression Point (VDD = 28 Vdc, IDQ =


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PDF MRF21085 MRF21085S
2007 - MRF21045

Abstract: No abstract text available
Text: Gain (VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 500 mA, f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = , 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz) Intermodulation Distortion (VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 500 mA, f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz) Two - Tone Input Return Loss (VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 500 mA, f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 =


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PDF MRF21045LR3 MRF21045LSR3 MRF21045
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