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SP160-SM02-T SP160-SM02-T ECAD Model Superior Sensor Technology Differential Pressure Sensor Optimized for Medical ±5K Pa to ±40K Pa - Single Tray
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SP110-SM02-M SP110-SM02-M ECAD Model Superior Sensor Technology Differential Pressure Sensor Optimized for Medical ±250 Pa to ±2500 Pa - Multi Tray
SP110-SM02-T SP110-SM02-T ECAD Model Superior Sensor Technology Differential Pressure Sensor Optimized for Medical ±250 Pa to ±2500 Pa - Single Tray
SP110-SM02-C SP110-SM02-C ECAD Model Superior Sensor Technology Differential Pressure Sensor Optimized for Medical ±250 Pa to ±2500 Pa - Cut Tape
SP160-SM02-C SP160-SM02-C ECAD Model Superior Sensor Technology Differential Pressure Sensor Optimized for Medical ±5K Pa to ±40K Pa - Cut Tape

MMIC X-band amplifier Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2004 - FMM5061VF

Abstract: x-band power amplifier ED-4701 x-Band High Power Amplifier eudyna GaAs FET Amplifier x-band mmic
Text: ) DESCRIPTION The FMM5061VF is a MMIC amplifier that contains a three-stage amplifier , internally matched, for standard communications band in the 9.5 to 13.3GHz frequency range. X-Band Power Amplifier MMIC , 1 FMM5061VF X-band Power Amplifier MMIC OUTPUT POWER , DRAIN CURRENT vs. INPUT POWER , Drain Current [mA] P1dB FMM5061VF X-Band Power Amplifier MMIC IMD vs. FREQUENCY IMD vs , ] 3 30 FMM5061VF X-band Power Amplifier MMIC OUTPUT POWER, DRAIN CURRENT vs. INPUT POWER by


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PDF FMM5061VF FMM5061VF x-band power amplifier ED-4701 x-Band High Power Amplifier eudyna GaAs FET Amplifier x-band mmic
2005 - EMM5068VU

Abstract: x-band power amplifier 610 108 001 ED-4701 RO4003 MMIC X-band amplifier 1300M CLASS D WITH 494 POWER amplifier diagram
Text: ES/EMM5068VU Preliminary X-Band Power Amplifier MMIC FEATURES High Output Power: Pout , =50 Small Hermetic Metal-Ceramic SMT Package(VU) DESCRIPTION The EMM5068VU is a MMIC amplifier that , 1 Preliminary ES/EMM5068VU X-Band Power Amplifier MMIC OUTPUT POWER , DRAIN CURRENT vs , /EMM5068VU Preliminary X-Band Power Amplifier MMIC IMD vs. FREQUENCY IMD vs OUTPUT POWER VDD , Output Pow er [dBm ] 3 31 Preliminary ES/EMM5068VU X-Band Power Amplifier MMIC OUTPUT


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PDF ES/EMM5068VU EMM5068VU x-band power amplifier 610 108 001 ED-4701 RO4003 MMIC X-band amplifier 1300M CLASS D WITH 494 POWER amplifier diagram
X-band amplifier

Abstract: 462 008 0004 00 AF
Text: EMM5068X X-Band Power Amplifier MMIC FEATURES High Output Power: Pout=33.0dBm (typ.) High , DESCRIPTION The EMM5068X is a MMIC amplifier that contains a three-stage amplifier , internally matched, for , -111A(C=100pF, R=1.5kΩ) Edition 1.0 December 2005 1 EMM5068X X-band Power Amplifier MMIC , [mA] P1dB 36 EMM5068X X-Band Power Amplifier MMIC IMD vs. FREQUENCY IMD vs OUTPUT POWER , -Tone Total Output Pow er [dBm ] 3 31 EMM5068X X-band Power Amplifier MMIC OUTPUT POWER, DRAIN


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PDF EMM5068X EMM5068X X-band amplifier 462 008 0004 00 AF
2006 - EMM5068X

Abstract: X-band amplifier SCL 1058 x-band mmic MMIC X-band amplifier ED-4701 emm5068
Text: EMM5068X X-Band Power Amplifier MMIC FEATURES High Output Power: Pout=33.0dBm (typ.) High , DESCRIPTION The EMM5068X is a MMIC amplifier that contains a three-stage amplifier , internally matched, for , -111A(C=100pF, R=1.5k) Edition 1.0 December 2005 1 EMM5068X X-band Power Amplifier MMIC , EMM5068X X-Band Power Amplifier MMIC IMD vs. FREQUENCY IMD vs OUTPUT POWER VDD=6V, IDD(DC)=1500m A , ] 3 31 EMM5068X X-band Power Amplifier MMIC OUTPUT POWER, DRAIN CURRENT vs. INPUT POWER by


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PDF EMM5068X EMM5068X X-band amplifier SCL 1058 x-band mmic MMIC X-band amplifier ED-4701 emm5068
2004 - FMM5061VF

Abstract: FMM5061 x-Band High Power Amplifier ED-4701
Text: ) DESCRIPTION The FMM5061VF is a MMIC amplifier that contains a three-stage amplifier , internally matched, for standard communications band in the 9.5 to 13.3GHz frequency range. X-Band Power Amplifier MMIC , 1 FMM5061VF X-band Power Amplifier MMIC OUTPUT POWER , DRAIN CURRENT vs. INPUT POWER , Drain Current [mA] P1dB 36 FMM5061VF X-Band Power Amplifier MMIC IMD vs. FREQUENCY IMD vs , ] 3 30 FMM5061VF X-band Power Amplifier MMIC OUTPUT POWER, DRAIN CURRENT vs. INPUT POWER by


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PDF FMM5061VF FMM5061VF FMM5061 x-Band High Power Amplifier ED-4701
2004 - Not Available

Abstract: No abstract text available
Text: ) DESCRIPTION The FMM5061VF is a MMIC amplifier that contains a three-stage amplifier , internally matched, for standard communications band in the 9.5 to 13.3GHz frequency range. X-Band Power Amplifier MMIC , mA dB dB 1 FMM5061VF X-band Power Amplifier MMIC OUTPUT POWER , DRAIN CURRENT vs. INPUT , Drain Current [mA] P1dB FMM5061VF X-Band Power Amplifier MMIC IMD vs. FREQUENCY IMD vs OUTPUT , FMM5061VF X-band Power Amplifier MMIC OUTPUT POWER, DRAIN CURRENT vs. INPUT POWER by Drain Voltage


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PDF FMM5061VF FMM5061VF
x-band mmic core chip

Abstract: x-band mmic phase shifter using lumped elements mmic core chip x-band microwave fet X band 5-bit phase shifter X-Band T/R digital phase shifter X band attenuator mmic A
Text: A GaAs X-Band Multifunction Control MMIC Using the MSAG® Process Abstract This paper describes efforts to achieve first pass design success for an X-band control MMIC consisting of multi-bit phase shifter, multi-bit attenuator, amplifier and serial-to-parallel converter functions using MSAG® Process 5. A discussion of the merits of multifunction MMIC integration using MSAG® Process 5 will be , success. The X-band control MMIC designed using the MSAG® process and following the outlined design


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2005 - x-band mmic

Abstract: No abstract text available
Text: pHEMT low-noise MMIC amplifier designed for use over the 8.5 to 14.0 GHz bandwidth. The amplifier , FMA411 X-BAND MMIC · PERFORMANCE 8.5 ­ 14.0 GHz Operating Bandwidth 2.6 dB Noise Figure 18 dB , amplifier is provided by plated thru-vias to the bottom of the die, no additional ground is required , include low-noise front end amplifiers, and general gain block utilizations in Xband. The amplifier is , /semis Revised: 11/03/05 Email: sales@filcsi.com FMA411 X-BAND MMIC ABSOLUTE MAXIMUM RATINGS1


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PDF FMA411 FMA411 x-band mmic
2002 - MAAPGM0021-DIE

Abstract: x-band power amplifier x-band mmic MMIC X-band amplifier
Text: RO-P-DS-3012 - - MAAPGM0021-DIE 2W C/X-Band Power Amplifier 4.5­9.0 GHz Preliminary Information Features 4.5-9.0 GHz GaAs MMIC Amplifier 4.5 to 9.0 GHz Operation 2 Watt Saturated , MAAPGM0021-Die is a 2-stage 2 W power amplifier with on-chip bias networks. This product is fully matched to 50 ohms on both the input and output. It can be used as a power amplifier stage or as a driver stage in , NF 9 dB 2nd Harmonic 2f -20 dBc 3rd Harmonic 3f -45 dBc 1. TB = MMIC


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PDF RO-P-DS-3012 MAAPGM0021-DIE MAAPGM0021-Die x-band power amplifier x-band mmic MMIC X-band amplifier
2002 - x-band power amplifier

Abstract: x-Band High Power Amplifier x-band mmic x-band HPA mmic MAAPGM0024-DIE MMIC X-band amplifier
Text: RO-P-DS-3010 - - MAAPGM0024-DIE 6W X-Band High Power Amplifier 7.5 ­ 10.5 GHz Preliminary Information Features 7.5-10.5 GHz GaAs MMIC HPA 7.5 to 10.5 GHz Operation 6 Watt Saturated , 3-stage 6 W high power amplifier with on-chip bias networks. This product is fully matched to 50 ohms on both the input and output. It can be used as a power amplifier stage or as a driver stage in , Drain Current IDD < 2.5 A 1. TB = MMIC Base Temperature 2.5 :1 2/6 RO-P-DS-3010 -


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PDF RO-P-DS-3010 MAAPGM0024-DIE MAAPGM0024-Die x-band power amplifier x-Band High Power Amplifier x-band mmic x-band HPA mmic MMIC X-band amplifier
2002 - x-band power amplifier

Abstract: x-band mmic x-Band High Power Amplifier MAAPGM0030 MAAPGM0030-DIE
Text: RO-P-DS-3021 - - MAAPGM0030-DIE 1W C/X-Band Power Amplifier 5.0-9.0 GHz Preliminary Information Features 5.0-9.0 GHz GaAs MMIC Amplifier 5.0-9.0 GHz Operation 1 Watt Saturated , MAAPGM0030-Die is a 2-stage 1 W power amplifier with on-chip bias networks. This product is fully matched to 50 ohms on both the input and output. It can be used as a power amplifier stage or as a driver stage in , NF 8 dB 2nd Harmonic 2f -20 dBc 3rd Harmonic 3f -35 dBc 1. TB = MMIC


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PDF RO-P-DS-3021 MAAPGM0030-DIE MAAPGM0030-Die x-band power amplifier x-band mmic x-Band High Power Amplifier MAAPGM0030
2004 - x-band power amplifier

Abstract: x-band mmic x-band power transistor MAAPGM0021-DIE x-Band High Power Amplifier
Text: RO-P-DS-3012 - A MAAPGM0021-DIE 2W C/X-Band Power Amplifier 4.5­9.0 GHz Preliminary Information Features 4.5-9.0 GHz GaAs MMIC Amplifier 4.5 to 9.0 GHz Operation 2 Watt Saturated , MAAPGM0021-Die is a 2-stage 2 W power amplifier with on-chip bias networks. This product is fully matched to 50 ohms on both the input and output. It can be used as a power amplifier stage or as a driver stage in , Distortion Single Carrier Level = 23 dBm IM5 41 dBc 1. TB = MMIC Base Temperature RO-P-DS


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PDF RO-P-DS-3012 MAAPGM0021-DIE MAAPGM0021-Die x-band power amplifier x-band mmic x-band power transistor x-Band High Power Amplifier
2002 - x-band mmic

Abstract: x-band power amplifier X-band marine radar x-band HPA 3 W S-Band high Power Amplifier 300 watts amplifier s-band x band power amplifiers
Text: RO-P-DS-3007 - - MAAPGM0015-DIE 15W S-Band High Power Amplifier 2.6 ­ 3.4 GHz Preliminary Information Features 2.6-3.4 GHz GaAs MMIC HPA 2.6 to 3.4 GHz Operation 15 Watt Saturated , a 2-stage 15 W high power amplifier with on-chip bias networks. This product is fully matched to 50 ohms on both the input and output. It can be used as a power amplifier stage or as a driver stage , Current IGG < 100 mA Drain Current IDD <7 A 1. TB = MMIC Base Temperature


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PDF RO-P-DS-3007 MAAPGM0015-DIE MAAPGM0015-Die x-band mmic x-band power amplifier X-band marine radar x-band HPA 3 W S-Band high Power Amplifier 300 watts amplifier s-band x band power amplifiers
2002 - MAALGM0002-DIE

Abstract: X-band low noise N4 MMIC x-band mmic lna RO-P-DS-3061 MAALGM002-DIE x-band mmic
Text: RO-P-DS-3061 MAALGM0002-DIE X-Band Low Noise Amplifier 8.0-12.0 GHz Preliminary Information 8.0-12.0 GHz GaAs MMIC Amplifier Features 2.3 dB Noise Figure 8.0-12.0 GHz Operation , amplifier . This product is fully matched to 50 ohms on both the input and output. Each device is 100% RF , 23 dBm 1. TB = MMIC Base Temperature - 2/6 RO-P-DS-3061 - - X-Band LNA , 150 °C MMIC Base Temperature TB Note 2 °C 2. Maximum MMIC Base Temperature = 150


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PDF RO-P-DS-3061 MAALGM0002-DIE MAALGM0002-DIE X-band low noise N4 MMIC x-band mmic lna RO-P-DS-3061 MAALGM002-DIE x-band mmic
2002 - x-band mmic

Abstract: x-band power amplifier MMIC X-band amplifier MAAPGM0033-DIE
Text: RO-P-DS-3018 - - MAAPGM0033-DIE 1W X-Band Power Amplifier 9.5 ­11.0 GHz Preliminary Information Features 9.5-11.0 GHz GaAs MMIC Amplifier 9.5 to 11.0 GHz Operation 1 Watt , 1. TB = MMIC Base Temperature 2/6 RO-P-DS-3018 - - 1W X-Band Power Amplifier , MAAPGM0033-Die is a 2-stage 1 W power amplifier with on-chip bias networks. This product is fully matched to 50 ohms on both the input and output. It can be used as a power amplifier stage or as a driver stage in


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PDF RO-P-DS-3018 MAAPGM0033-DIE MAAPGM0033-Die x-band mmic x-band power amplifier MMIC X-band amplifier
x-band mmic lna

Abstract: x-band mmic LNA x-band FMA219BF FMA219 MIL-HDBK-263 bc 408 equivalent LNA 9GHz
Text: -stage, reactively matched pHEMT low-noise MMIC amplifier designed for use over the 7.0 to 11.0 GHz bandwidth. The amplifier requires a single +3V supply and one off-chip component for supply de-coupling. Both the input and output ports are DC de-coupled. Grounding of the amplifier is provided by plated thru-vias to the , PRELIMINARY · X-BAND LNA MMIC PERFORMANCE 7.0 ­ 11.0 GHz Operating Bandwidth 1.5 dB , amplifiers, and general gain block utilizations in Xband. The amplifier is unconditionally stable over all


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PDF FMA219 FMA219 x-band mmic lna x-band mmic LNA x-band FMA219BF MIL-HDBK-263 bc 408 equivalent LNA 9GHz
2004 - X-band lna

Abstract: x-band mmic lna FMA219 LNA 9GHz
Text: X-BAND LNA MMIC · DESCRIPTION AND APPLICATIONS The FMA219 is a 2-stage, reactively matched pHEMT low-noise MMIC amplifier designed for use over the 7.0 to 11.0 GHz bandwidth. The amplifier requires a , DC de-coupled. Grounding of the amplifier is provided by plated thru-vias to the bottom of the die , general gain block utilizations in Xband. The amplifier is unconditionally stable over all load states , Dissipation Gain Compression 1 FMA219 X-BAND LNA MMIC Symbol VDD IDD PIN TSTG PTOT Comp. 2 2 Test


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PDF FMA219 FMA219 11GHz X-band lna x-band mmic lna LNA 9GHz
2014 - Not Available

Abstract: No abstract text available
Text: products, today announced two new high power MMIC amplifiers ideal for X-Band communication and radar applications. The MAAP-015030 two stage 8.5 - 11.75 GHz GaAs MMIC power amplifier has a saturated pulsed output power of 41dBm, a large signal gain of 21dB and 40% power added efficiency. The power amplifier , 11.5 GHz GaAs pHEMT MMIC power amplifier capable of achieving a saturated pulsed output power of , Communication Applications Two-stage and three-stage MMIC Amplifiers Boast up to 41dBm of Saturated Pulsed


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PDF 41dBm MAAP-015030 41dBm, com/multimedia/home/20140428005116/en/
2005 - RO-P-DS-3061

Abstract: X-band lna x-band lna chip x-band mmic lna MMIC X-band amplifier MAALGM002-DIE
Text: RO-P-DS-3061 - X-Band Low Noise Amplifier 8.0-12.0 GHz MAALGM0002-DIE Preliminary Information 8.0-12.0 GHz GaAs MMIC Amplifier Features 2.3 dB Noise Figure 8.0-12.0 GHz Operation , amplifier . This product is fully matched to 50 ohms on both the input and output. Each device is 100% RF , MMIC Base Temperature RO-P-DS-3061 - - 2/6 X-Band LNA Maximum Operating Conditions 1 , Characteristic Drain Voltage Gate Voltage Junction Temperature MMIC Base Temperature Symbol VDD VGG TJ TB Min 2.5


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PDF RO-P-DS-3061 MAALGM0002-DIE MAALGM0002-DIE PAD1504I BVA80UM BVA80UM RO-P-DS-3061 X-band lna x-band lna chip x-band mmic lna MMIC X-band amplifier MAALGM002-DIE
x-band mmic

Abstract: MMIC X-band amplifier X-band amplifier FMA246 MIL-HDBK-263 x-band power amplifier
Text: FMA246 is a 3-stage, reactively matched pHEMT high-gain MMIC amplifier designed for use over the 8 to 14 GHz bandwidth. The amplifier requires a single +6V supply and one off-chip component for supply , PRELIMINARY · HIGH-GAIN X-BAND MMIC PERFORMANCE 8.0 ­ 14.0 GHz Operating Bandwidth 2.5 , DC de-coupled. Grounding of the amplifier is provided by plated thru-vias to the bottom of the die , include general (low noise) gain block utilizations in X-band. The amplifier is unconditionally stable


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PDF FMA246 FMA246 MIL-STD-1686 MIL-HDBK-263. 100x100 x-band mmic MMIC X-band amplifier X-band amplifier MIL-HDBK-263 x-band power amplifier
x-band power transistor

Abstract: x-band microwave fet MMIC X-band amplifier x-band mmic lna GAAS FET AMPLIFIER x-band 10w microwave transceiver X-band GaAs pHEMT MMIC Chip X band 5-bit phase shifter x-band mmic x-band limiter
Text: , achieving >10watts with 40% power-added efficiency. A typical 3-stage HPA (High Power Amplifier ) MMIC , MAY 2000 GaAs MMIC Processes Enable Multi-Function Integration, Increasing Reliability While , , the exploding commercial wireless market is breathing new life into the GaAs MMIC industry. As the , needs and longer time horizon of the defense market, a number of GaAs MMIC suppliers have exited the , layers. Both microwave and digital FETS can be fabricated on a single MMIC , with each microwave device


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2002 - MA03501D

Abstract: x-band mmic
Text: / attenuator/buffer amplifier MMIC . The on-chip serial to parallel converter circuitry allows for control of , V 1.00 MA03501D X-Band Gain/Phase Control MMIC 8.0 ­11.0 GHz Features E E E E E 8.0-11.0 GHz Serial Input Control MMIC 8.0 to 11.0 GHz Operation 6-bit Phase Shifter and 5 , 6.0 7.0 dB 12 dB Attenuator Bit 10.8 12 13.2 dB 1. TB = MMIC Base Temperature V1.00 X-Band Serial Input Gain/Phase Control MMIC 2/7 MA03501D Electrical Characteristics


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PDF MA03501D MA03501D x-band mmic
2014 - Not Available

Abstract: No abstract text available
Text: millimeter wave products, today announced two new high power MMIC amplifiers ideal for X-Band communication and radar applications. The MAAP-015030 two stage 8.5 - 11.75 GHz GaAs MMIC power amplifier has a , stage 8.5 - 11.5 GHz GaAs pHEMT MMIC power amplifier capable of achieving a saturated pulsed output , Radar and Communication Applications Two-stage and three-stage MMIC Amplifiers Boast up to 41dBm of , power amplifier can be biased using a direct gate voltage or using an on chip gate bias circuit


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PDF 41dBm MAAP-015030 41drized
2002 - x-band limiter

Abstract: x-band mmic lna LNA x-band MMIC X-band amplifier MMIC limiter x-band mmic band Limiter MA01502D 6 ghz amplifier 10w
Text: RO-P-DS-3002 MA01502D X-Band Limiter/Low Noise Amplifier 8.5 ­12.0 GHz Features 8.5-12.0 GHz GaAs MMIC Amplifier 8.5 to 12.0 GHz Operation 10 Watt CW On-chip Limiter Balanced Design , Radar Description The MA01502D is a balanced 2-stage low noise amplifier with on-chip, receiver , 1. TB = MMIC Base Temperature 20 dBm 13 20 dB 13 20 dB - 2/6 , -4.5 -5.0 -5.5 V Junction Temperature TJ 150 °C MMIC Base Temperature TB


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PDF RO-P-DS-3002 MA01502D MA01502D x-band limiter x-band mmic lna LNA x-band MMIC X-band amplifier MMIC limiter x-band mmic band Limiter 6 ghz amplifier 10w
2002 - x-band MMIC

Abstract: X band 5-bit phase shifter MA03501D MMIC X-band amplifier x-band mmic phase
Text: / attenuator/buffer amplifier MMIC . The on-chip serial to parallel converter circuitry allows for control of , RO-P-DS-3004 - - MA03501D X-Band Gain/Phase Control MMIC 8.0 ­11.0 GHz Features 8.0-11.0 GHz Serial Input Control MMIC 8.0 to 11.0 GHz Operation 6-bit Phase Shifter and 5 , 6.0 7.0 dB 12 dB Attenuator Bit 10.8 12 13.2 dB 1. TB = MMIC Base Temperature RO-P-DS-3004 - - X-Band Serial Input Gain/Phase Control MMIC 2/7 MA03501D Electrical


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PDF RO-P-DS-3004 MA03501D MA03501D x-band MMIC X band 5-bit phase shifter MMIC X-band amplifier x-band mmic phase
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