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MMG3011NT1 datasheet (2)

Part Manufacturer Description Type PDF
MMG3011NT1 Freescale Semiconductor IC RF AMP CHIP SINGLE GP 6000MHZ 5V 3SOT-89 T/R Original PDF
MMG3011NT1 Freescale Semiconductor Heterojunction Bipolar Transistor (InGaP HBT) Original PDF

MMG3011NT1 Datasheets Context Search

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2005 - transistor E 13009

Abstract: 185 13-0079 transistor 13009 13009 TRANSISTOR equivalent Max 17113 E 13009 L e 13009 f 71080 58063 13009 H
Text: Freescale Semiconductor Technical Data Document Number: MMG3011NT1 Rev. 4, 7/2007 Heterojunction Bipolar Transistor (InGaP HBT) Broadband High Linearity Amplifier MMG3011NT1 The MMG3011NT1 is a General Purpose Amplifier that is internally input and output matched. It is designed for a , Data Freescale Semiconductor MMG3011NT1 1 Table 4. Electrical Characteristics (VCC = 5 Vdc , reliable operation, the junction temperature should not exceed 150°C. MMG3011NT1 2 RF Device Data


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PDF MMG3011NT1 MMG3011NT1 transistor E 13009 185 13-0079 transistor 13009 13009 TRANSISTOR equivalent Max 17113 E 13009 L e 13009 f 71080 58063 13009 H
2005 - 011410

Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MMG3011NT1 Rev. 0, 5/2005 Heterojunction Bipolar Transistor (InGaP HBT) Broadband High Linearity Amplifier The MMG3011NT1 is a General , Free Leads · In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel. MMG3011NT1 0 - 6000 , - AN1955. Freescale Semiconductor, Inc., 2005. All rights reserved. MMG3011NT1 1 RF Device , °C. MMG3011NT1 2 RF Device Data Freescale Semiconductor Table 5. Functional Pin Description Pin Number 1 2 3


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PDF MMG3011NT1 MMG3011NT1 011410
2005 - 011410

Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MMG3011NT1 Rev. 6, 2/2012 Heterojunction Bipolar Transistor (InGaP HBT) Broadband High Linearity Amplifier The MMG3011NT1 is a general , . T1 Suffix = 1000 Units, 12 mm Tape Width, 7 inch Reel. MMG3011NT1 0-6000 MHz, 15 dB 15 dBm , . All rights reserved. MMG3011NT1 1 RF Device Data Freescale Semiconductor, Inc. Table 4 , temperature should not exceed 150°C. MMG3011NT1 2 RF Device Data Freescale Semiconductor, Inc. Table 5


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PDF MMG3011NT1 MMG3011NT1 011410
2005 - Not Available

Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MMG3011NT1 Rev. 6, 2/2012 Heterojunction Bipolar Transistor (InGaP HBT) Broadband High Linearity Amplifier MMG3011NT1 The MMG3011NT1 is a general purpose amplifier that is internally input and output matched. It is designed for a , Freescale Semiconductor, Inc. MMG3011NT1 1 Table 4. Electrical Characteristics (VCC = 5 Vdc, 900 MHz , operation, the junction temperature should not exceed 150°C. MMG3011NT1 2 RF Device Data Freescale


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PDF MMG3011NT1 MMG3011NT1
2007 - Not Available

Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MMG3011NT1 Rev. 3, 3/2007 Heterojunction Bipolar Transistor (InGaP HBT) Broadband High Linearity Amplifier MMG3011NT1 The MMG3011NT1 is a General Purpose Amplifier that is internally input and output matched. It is designed for a , rights reserved. RF Device Data Freescale Semiconductor MMG3011NT1 1 Table 4. Electrical , €” V 1. For reliable operation, the junction temperature should not exceed 150°C. MMG3011NT1 2


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PDF MMG3011NT1 MMG3011NT1
2006 - 95835

Abstract: e 13009 f 58063 71080 all transistor 13009 13009 TRANSISTOR equivalent transistor 13009 A113 A114 A115
Text: Freescale Semiconductor Technical Data Document Number: MMG3011NT1 Rev. 2, 5/2006 Heterojunction Bipolar Transistor (InGaP HBT) Broadband High Linearity Amplifier MMG3011NT1 The MMG3011NT1 is a General Purpose Amplifier that is internally input and output matched. It is designed for a , Semiconductor RF Product Device Data MMG3011NT1 6-1 Table 4. Electrical Characteristics (VCC = 5 Vdc , reliable operation, the junction temperature should not exceed 150°C. MMG3011NT1 6-2 Freescale


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PDF MMG3011NT1 MMG3011NT1 95835 e 13009 f 58063 71080 all transistor 13009 13009 TRANSISTOR equivalent transistor 13009 A113 A114 A115
2005 - NT 2955

Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MMG3011NT1 Rev. 1, 8/2005 Heterojunction Bipolar Transistor (InGaP HBT) Broadband High Linearity Amplifier The MMG3011NT1 is a General , Compliant · In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel. MMG3011NT1 0 -6000 MHz , Semiconductor, Inc., 2005. All rights reserved. MMG3011NT1 1 RF Device Data Freescale Semiconductor , 48 - Unit dB dB dB dBm dBm dB mA V MMG3011NT1 2 RF Device Data Freescale Semiconductor Table


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PDF MMG3011NT1 MMG3011NT1 NT 2955
2005 - 95835

Abstract: A113 MMG3011NT1 ML200C C101 C0603C103J5RAC transistor E 13009 transistor 13009 e 13009 f 4506 gp
Text: Freescale Semiconductor Technical Data Document Number: MMG3011NT1 Rev. 5, 3/2008 Heterojunction Bipolar Transistor (InGaP HBT) Broadband High Linearity Amplifier MMG3011NT1 The MMG3011NT1 is a General Purpose Amplifier that is internally input and output matched. It is designed for a , ., 2005-2008. All rights reserved. RF Device Data Freescale Semiconductor MMG3011NT1 1 Table 4 , - V 1. For reliable operation, the junction temperature should not exceed 150°C. MMG3011NT1


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PDF MMG3011NT1 MMG3011NT1 95835 A113 ML200C C101 C0603C103J5RAC transistor E 13009 transistor 13009 e 13009 f 4506 gp
2005 - NT 2955 ON transistor

Abstract: 78061 125992
Text: Freescale Semiconductor Technical Data Document Number: MMG3011NT1 Rev. 1, 8/2005 Heterojunction Bipolar Transistor (InGaP HBT) Broadband High Linearity Amplifier The MMG3011NT1 is a General , Compliant · In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel. MMG3011NT1 0 -6000 MHz , Semiconductor, Inc., 2005. All rights reserved. MMG3011NT1 1 RF Device Data Freescale Semiconductor , 48 - Unit dB dB dB dBm dBm dB mA V MMG3011NT1 2 RF Device Data Freescale Semiconductor Table


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PDF MMG3011NT1 MMG3011NT1 NT 2955 ON transistor 78061 125992
2007 - TV booster diagram

Abstract: mhw* 820-1 DATASHEET pcb assembly 85501 application circuits of ic 74121 MHW6342TN 010485 MHL9236MN DL210 motorola 18310 GP 809 DIODE
Text: . . . 3 - 25 MMG3011NT1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 - 136 , 1514/2 1543/1543/1898/- Pkg/Style 1302/1 MMG3011NT1 (18f) MMG3007NT1(18f) MMG3010NT1(18f , . . . . . . . . . . . . . . . . . . 2 - 125 MMG3011NT1 . . . . . . . . . . . . . . . . . . . .


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PDF DL210 TV booster diagram mhw* 820-1 DATASHEET pcb assembly 85501 application circuits of ic 74121 MHW6342TN 010485 MHL9236MN DL210 motorola 18310 GP 809 DIODE
2005 - stripline directional couplers

Abstract: MRFP36030 MRF1511NT1 ESD Product Selector Guide MRF377HR5 NONLINEAR MODEL LDMOS MRF5S9080NB MRF6S9045NR1 MRF6S9045NBR1 MMM6025
Text: , MMG3009NT1, MMG3010NT1, MMG3011NT1 , MMG3012NT1, MMG3013NT1 WLAN MMG2401NR2 SG1009-2 SG1009Q32005


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PDF SG1009Q32005 MMM6025 MC13820 MRF377HR3, MRF377HR5 MRF6S9045NR1, MRF6S9045NBR1, MRF6S9060NR1, MRF6S9060NBR1, MRF6S9125NR1, stripline directional couplers MRFP36030 MRF1511NT1 ESD Product Selector Guide MRF377HR5 NONLINEAR MODEL LDMOS MRF5S9080NB MRF6S9045NR1 MRF6S9045NBR1 MMM6025
2005 - MMM6029

Abstract: MMM6007 NONLINEAR MODEL LDMOS baseband DigRF semiconductor cross index MW6S010 MRF5S9080NB MMM6000 MRF648 applications MMH3101NT1
Text: Amplifiers MMG3007NT1, MMG3008NT1, MMG3009NT1, MMG3010NT1, MMG3011NT1 , MMG3012NT1, MMG3013NT1 SG1009


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PDF SG1009Q42005 MMM6025, MMM6035 MC13820 MRF6P3300HR3, MRF6P3300HR5 MRF6S9045NR1, MRF6S9045NBR1, MRF6S9060NR1, MRF6S9060NBR1, MMM6029 MMM6007 NONLINEAR MODEL LDMOS baseband DigRF semiconductor cross index MW6S010 MRF5S9080NB MMM6000 MRF648 applications MMH3101NT1
2005 - MC9S12XDP384

Abstract: MPX7007 MPC8548 DSP56F803BU80E DSPA56371AF150 SG187 MRF648 applications MRF373 mrf6s19100nb DSP56303PV100
Text: No file text available


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PDF SG1000CRQ32005 SG1000CRQ32005 MC9S12XDP384 MPX7007 MPC8548 DSP56F803BU80E DSPA56371AF150 SG187 MRF648 applications MRF373 mrf6s19100nb DSP56303PV100
2008 - power transistors table

Abstract: MHW6342TN MW6S010NR1 mrfe6s9060n "RF high power Amplifier" Motorola Microwave power Transistor MRF373 PUSH PULL MRF6P23190HR6 MRF6V2300N MRFG35010R1
Text: No file text available


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2010 - MRF8P9040N

Abstract: MRF1513NT1 s2p rf Amplifier mhz Doherty 470-860 MRF8S21100H MRF8S21100HS MRF8S9220HR3 MRF8S9170NR3 AN1643 MRF6P23190H MRF6VP3450HR6
Text: No file text available


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2005 - uhf linear amplifier module

Abstract: MMH3101 GP 809 DIODE Power Amplifier MMIC 2.6 GHz MHW7185CL 33048 81348 MHW8272 Freescale Semiconductor hybrid amplifier modules CA283
Text: ) MMG3007NT1(46a) MMG3008NT1(46a) MMG3009NT1(46a) MMG3010NT1(46a) MMG3011NT1 (46a) MMG3012NT1(46a


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PDF DL209 uhf linear amplifier module MMH3101 GP 809 DIODE Power Amplifier MMIC 2.6 GHz MHW7185CL 33048 81348 MHW8272 Freescale Semiconductor hybrid amplifier modules CA283
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