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MMBTH81 Trans GP BJT PNP 20V 0.05A 3-Pin SOT-23 T/R - Tape and Reel (Alt: MMBTH81) MMBTH81 ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000 Buy
Avnet (5) MMBTH81 Reel 27,000 42 Weeks 3,000 - - - - $0.03255 Buy Now
MMBTH81 Tape and Reel 0 42 Weeks 21,000 - - - - - Buy Now
MMBTH81 Ammo Pack 0 35 Weeks, 4 Days 1 $0.233 $0.233 $0.07 $0.049 $0.049 Buy Now
MMBTH81 Bulk 0 1 Weeks 8,334 - - - - $0.03922 Buy Now
MMBTH81 Tape and Reel 0 42 Weeks, 2 Days 3,000 - - - - €0.026 Buy Now
Newark element14 MMBTH81 Cut Tape 11,765 1 $0.02 $0.02 $0.02 $0.02 $0.02 Buy Now
Future Electronics (2) MMBTH81 Cut Tape/Mini-Reel 24,000 1 $0.225 $0.225 $0.225 $0.0337 $0.0276 Buy Now
MMBTH81 Reel 24,000 3,000 - - - - $0.0221 Buy Now
RS Components (2) MMBTH81 Reel 0 3,000 - - - - $0.03 Buy Now
MMBTH81 Package 0 100 - - $0.068 $0.049 $0.038 Buy Now
Schukat electronic MMBTH81 0 100 - - €0.0595 €0.0295 €0.0188 Buy Now
More Distributors
element14 Asia-Pacific (2) MMBTH81 0 1 $0.347 $0.241 $0.101 $0.069 $0.047 Buy Now
MMBTH81 20,316 1 $0.347 $0.241 $0.101 $0.069 $0.047 Buy Now
Farnell element14 (2) MMBTH81 20,313 1 £0.188 £0.131 £0.0556 £0.0375 £0.0375 Buy Now
MMBTH81 0 1 £0.188 £0.131 £0.0556 £0.0375 £0.0375 Buy Now
Fairchild Semiconductor Corporation
MMBTH81. SOT-23 ELEC MPSH81 ROHS COMPLIANT: YES MMBTH81. ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000 Buy
Newark element14 MMBTH81. Reel 0 3,000 $0.021 $0.021 $0.021 $0.021 $0.021 Buy Now
Fairchild Semiconductor Corporation
MMBTH81 RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Very High Frequency Band, Silicon, PNP, TO-236AA MMBTH81 ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000 Buy
Rochester Electronics MMBTH81 2,316,357 1 $0.05 $0.05 $0.05 $0.04 $0.04 Buy Now
America II Electronics MMBTH81 4,239 - - - - - Buy Now
Bristol Electronics (3) MMBTH81 4,690 27 - - $0.0938 $0.0562 $0.0375 Buy Now
MMBTH81 2,540 27 - - $0.0938 $0.0562 $0.0562 Buy Now
MMBTH81 2,317 - - - - - Buy Now
ComS.I.T. MMBTH81 12,000 - - - - - Get Quote
Chip 1 Exchange MMBTH81 2,603 - - - - - Get Quote
More Distributors
New Advantage Corporation MMBTH81 327,000 327,000 - - - - $0.0271 Buy Now
Motorola Semiconductor Products
MMBTH81LT1 MMBTH81LT1 ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000 Buy
Bristol Electronics (2) MMBTH81LT1 6,000 - - - - - Buy Now
MMBTH81LT1 10,178 27 - - $0.0938 $0.0562 $0.0281 Buy Now
Chip 1 Exchange MMBTH81LT1 3,244 - - - - - Get Quote

MMBTH81 datasheet (14)

Part ECAD Model Manufacturer Description Type PDF
MMBTH81 MMBTH81 ECAD Model Fairchild Semiconductor PNP RF Transistor Original PDF
MMBTH81 MMBTH81 ECAD Model Fairchild Semiconductor PNP RF Transistor Original PDF
MMBTH81 MMBTH81 ECAD Model Fairchild Semiconductor PNP RF Transistor Original PDF
MMBTH81 MMBTH81 ECAD Model Fairchild Semiconductor PNP RF Transistor Scan PDF
MMBTH81 MMBTH81 ECAD Model Motorola European Master Selection Guide 1986 Scan PDF
MMBTH81 MMBTH81 ECAD Model Motorola PNP silicon UHF/VHF transistor. Scan PDF
MMBTH81 MMBTH81 ECAD Model Others Semiconductor Master Cross Reference Guide Scan PDF
MMBTH81 MMBTH81 ECAD Model National Semiconductor General Purpose Amplifiers and Switches- Scan PDF
MMBTH81 MMBTH81 ECAD Model National Semiconductor NPN RF Transistor Scan PDF
MMBTH81 MMBTH81 ECAD Model National Semiconductor RF Amplifiers Scan PDF
MMBTH81_D87Z MMBTH81_D87Z ECAD Model Fairchild Semiconductor PNP RF Transistor; Package: SOT-23; No of Pins: 3; Container: Tape & Reel Original PDF
MMBTH81LT1 MMBTH81LT1 ECAD Model Motorola UHF-VHF TRANSISTOR Original PDF
MMBTH81LT1 MMBTH81LT1 ECAD Model On Semiconductor UHF/VHF Transistor Original PDF
MMBTH81_NL MMBTH81_NL ECAD Model Fairchild Semiconductor PNP RF Transistor Original PDF

MMBTH81 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
Not Available

Abstract: No abstract text available
Text: SEMICONDUCTOR tm MPSH81 MMBTH81 Mark: 3D PNP RF Transistor This device is designed , noted Max Characteristic Units MPSH81 * MMBTH81 350 2.8 125 225 1.8 R ejc , / MMBTH81 Discrete POWER & Signal Technologies FAIRCHILD (continued) Electrical Characteristics , ) - 0.1 - 1.0 -10 lc - COLLECTOR CURRENT (mA) -100 MPSH81 / MMBTH81 PNP RF Transistor MPSH81 / MMBTH81 (continued) AC Typical Characteristics Input / Output Capacitance vs


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PDF MPSH81 MMBTH81 MPSH81
1997 - MPSH81

Abstract: MMBTH81 transistor mark 3d
Text: MPSH81 MMBTH81 C E C E TO-92 SOT-23 B B Mark: 3D PNP RF Transistor , 2.8 125 * MMBTH81 225 1.8 357 556 mW mW/°C °C/W °C/W *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." ©1997 Fairchild Semiconductor Corporation H81, Rev B MPSH81 / MMBTH81 , . Collector Current Collector Saturation Voltage vs. Collector Current MPSH81 / MMBTH81 PNP RF , vs. Ambient Temperature MPSH81 / MMBTH81 PNP RF Transistor (continued) AC Typical


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PDF MPSH81 MMBTH81 OT-23 MPSH81 MMBTH81 transistor mark 3d
2002 - mpsh81 model

Abstract: No abstract text available
Text: MPSH81 / MMBTH81 MPSH81 MMBTH81 C E C E TO-92 B SOT-23 Mark: 3D B PNP RF Transistor This device is designed for general RF amplifier and mixer applications to 250 mHz with collector , 125 357 Max * MMBTH81 225 1.8 556 Units mW mW/°C °C/W °C/W *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." ã1997 Fairchild Semiconductor Corporation 3-304 MPSH81 / MMBTH81 PNP RF , CTOR CURRENT (mA) 3-305 MPSH81 / MMBTH81 PNP RF Transistor Typical Characteristics


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PDF MPSH81 MMBTH81 MPSH81 OT-23 mpsh81 model
1997 - transistor mark 3d

Abstract: MMBTH81 MPSH81 3D TRANSISTOR BE SOT
Text: MPSH81 MMBTH81 C E C TO-92 BE SOT-23 B Mark: 3D PNP RF Transistor This , * MMBTH81 225 1.8 357 556 mW mW/°C °C/W °C/W MPSH81 / MMBTH81 Discrete POWER & Signal , Collector Saturation Voltage vs. Collector Current MPSH81 / MMBTH81 PNP RF Transistor (continued , / MMBTH81 PNP RF Transistor (continued) AC Typical Characteristics Input / Output Capacitance vs , 25 50 75 100 TEMPERATURE ( ° C) 125 150 MPSH81 / MMBTH81 PNP RF Transistor


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PDF MPSH81 MMBTH81 OT-23 MPSH81 transistor mark 3d MMBTH81 3D TRANSISTOR BE SOT
LTED

Abstract: MPSH81 MARK CB SOT23
Text: MPSH81 / MMBTH81 FAIR CHILD S E M IC O N D U C T O R tm D is c re te PO W E R & S ig n a l Technologies MPSH81 MMBTH81 SOT-23 Mark: 3D B PNP RF Transistor This device is designed for general RF am plifier and mixer applications to 250 mHz with collector currents in the 1.0 mA to 30 m A , 125 357 Max * MMBTH81 225 1.8 556 Units mW mW /°C °C/W °C/W Rejc RejA * D e v ic e m , tio n H 8 1 , R ev B MPSH81 / MMBTH81 MPSH81 / MMBTH81 MPSH81 / MMBTH81


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PDF MPSH81 MMBTH81 MPSH81 OT-23 MMBTH81 LTED MARK CB SOT23
transistor BC 236

Abstract: No abstract text available
Text: MPSH81/ MMBTH81 National SLA Semiconductor "I MPSH81 MMBTH81 //W U E qU Bc TO -92 T L /G /1 0 1 0 0 -1 TO (S O T - -236 2 3 ) T L /G /10100-5 PNP RF Transistor Electrical Characteristics Symbol OFF CHARACTERISTICS v (BR)CEO ta = 25°c unless otherwise noted Min Max Units Parameter Collector-Emitter Breakdown Voltage, (Note 1) (Iq = 1.0 mAdc, lg = 0) Collector-Base Breakdown Voltage (lc = 10 jj-Adc, lE = 0) Emitter-Base Breakdown Voltage (lE = 10 fxAdc, lc = 0


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PDF MPSH81/MMBTH81 MPSH81 MMBTH81 transistor BC 236
transistor 6D

Abstract: D040 MMBTH81 MPSH81 transistor BUV 92
Text: co H- CÛ 00 CO O. ti Discrete POWER & Signal National Technologies Semiconductor" MPSH81 MMBTH81 TO-92 PNP RF Transistor This device is designed for general RF amplifier and mixer applications to 250 mHz with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 75. Absolute Maximum Ratings* ta *25x unless otherwise noted Symbol Parameter Value Units VcEO , Units MPSH81 ' MMBTH81 Pd Total Device Dissipation Derate above 25°C 350 2.8 225 1.8 mW mW/°C


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PDF MPSH81 MMBTH81 b5D1130 D040a0fl bSD1130 transistor 6D D040 MMBTH81 MPSH81 transistor BUV 92
1997 - nk90

Abstract: BF-133 mje321 Bf133 pnp rf transistor PN2222N MPSH81 MMBTH81 F63TNR CBVK741B019
Text: MPSH81 / MMBTH81 MPSH81 MMBTH81 C E C E TO-92 B SOT-23 B Mark: 3D PNP RF Transistor This device is designed for general RF amplifier and mixer applications to 250 mHz , Fairchild Semiconductor Corporation Max Units MPSH81 350 2.8 125 * MMBTH81 225 1.8 357 , Emitter Cutoff Current VEB = 2.0 V, IC = 0 100 MPSH81 / MMBTH81 PNP RF Transistor nA ON , TEMPERATURE ( ° C) 125 150 MPSH81 / MMBTH81 PNP RF Transistor TO-92 Tape and Reel Data TO


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PDF MPSH81 MMBTH81 MPSH81 OT-23 nk90 BF-133 mje321 Bf133 pnp rf transistor PN2222N MMBTH81 F63TNR CBVK741B019
1997 - MARKING W3 SOT23 TRANSISTOR

Abstract: rf transistor mark code H1 transistor marking code ne SOT-23 marking code w2 sot23 pnp rf transistor sot23 Transistor marking p2 sot-23 Marking 3D marking 3d sot-23 Marking code mps
Text: MPSH81 / MMBTH81 MPSH81 MMBTH81 C E C E TO-92 B SOT-23 Mark: 3D B PNP RF Transistor This device is designed for general RF amplifier and mixer applications to 250 mHz with collector , 125 357 Max * MMBTH81 225 1.8 556 Units mW mW/°C °C/W °C/W *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." 1997 Fairchild Semiconductor Corporation MPSH81 / MMBTH81 PNP RF , CURRENT (mA) MPSH81 / MMBTH81 PNP RF Transistor (continued) Typical Characteristics


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PDF MPSH81 MMBTH81 MPSH81 OT-23 MARKING W3 SOT23 TRANSISTOR rf transistor mark code H1 transistor marking code ne SOT-23 marking code w2 sot23 pnp rf transistor sot23 Transistor marking p2 sot-23 Marking 3D marking 3d sot-23 Marking code mps
1997 - mpsh81 model

Abstract: MMBTH81 CBVK741B019 F63TNR MPSH81 PN2222N NE-21 BF-133
Text: MPSH81 / MMBTH81 MPSH81 MMBTH81 C E C E TO-92 B SOT-23 B Mark: 3D PNP RF Transistor This device is designed for general RF amplifier and mixer applications to 250 mHz , Fairchild Semiconductor Corporation Max Units MPSH81 350 2.8 125 * MMBTH81 225 1.8 357 , Emitter Cutoff Current VEB = 2.0 V, IC = 0 100 MPSH81 / MMBTH81 PNP RF Transistor nA ON , TEMPERATURE ( ° C) 125 150 MPSH81 / MMBTH81 PNP RF Transistor TO-92 Tape and Reel Data TO


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PDF MPSH81 MMBTH81 MPSH81 OT-23 mpsh81 model MMBTH81 CBVK741B019 F63TNR PN2222N NE-21 BF-133
MMBTH81

Abstract: MPSH81
Text: RAI F?C IH II-D e mi conductor tm Discrete POWER & Signal Technologies ■a (/) 00 MPSHÔ1 c e : ^C0 TO-92 MMBTH81 SOT-23 Mark: 3D 00 H 00 PNP RF Transistor This device is designed for general RF amplifier and mixer applications to 250 mHz with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 75. Absolute Maximum Ratings4 TA = 25°C unless otherwise noted , Symbol Characteristic Max Units mpsh81 * mmbth81 Pd Total Device Dissipation Derate above 25°C 350


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PDF MMBTH81 OT-23 MMBTH81 MPSH81
1997 - Not Available

Abstract: No abstract text available
Text: MPSH81 / MMBTH81 MPSH81 MMBTH81 C E C E TO-92 B SOT-23 B Mark: 3D PNP RF Transistor This device is designed for general RF amplifier and mixer applications to 250 mHz , 2.8 125 * MMBTH81 225 1.8 357 556 mW mW/°C °C/W °C/W (continued) Electrical , MPSH81 / MMBTH81 PNP RF Transistor nA V ON CHARACTERISTICS hFE DC Current Gain IC = , TEMPERATURE ( ° C) 125 150 MPSH81 / MMBTH81 PNP RF Transistor TO-92 Tape and Reel Data TO


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PDF MPSH81 MMBTH81 MPSH81 OT-23
PN3563

Abstract: 2N5179 TO-92 MPS5179 MMBT918 MMBT5179 BF199 2N918 2N5770 2N5179 2N3663
Text: ) MMBTH81 20 50 60 5.0 10 600 0.85 TO-236* MPSH81 20 50 60 5.0 10 600 0.85 T0-92(96) * TO-236AB is


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PDF SD113D 2N3663 T0-92 2N5179 MMBT5179 O-236* MPS5179 2N5770 2N918 PN3563 2N5179 TO-92 MPS5179 MMBT918 MMBT5179 BF199 2N918 2N5770 2N5179 2N3663
TO236

Abstract: MMBTH30 to-236
Text: MMBT H20 MMBTH81 TO-236 (49) TO-236 (49) TO-236 (49) TO-236 (49) TO-236 (49) 0037125 0.36 400 0.5


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PDF O-236 MMBTH10 MMBTH30 MMBTH11 TO236 to-236
ssot-6

Abstract: MMBT pnp FJ sot23 sot 223 fairchild
Text: 25 15 900 650 600 . ' m » BO SOT-23 SOT-23 SOT 23 4 3 5 . , PNP MMBTH81


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PDF MMBT100 MMBT3904 MMBT2222A MMBT4401 MMBTA05 PZT2222A PZT3904 NMT2222A OT-23 ssot-6 MMBT pnp FJ sot23 sot 223 fairchild
2N2946

Abstract: 2N3735 2n2945 2N3737 2N2944A 25CC 2N3734 MMBTH81 2N3735 MOTOROLA TO-206AD
Text: Temperature Tj, Tstq 150 °C MMBTH81 = 3D 96D Ö2066 D - T-31-15 MMBTH81 CASE 318-02/03, STYLE 6 SOT


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PDF MMBTH81 T-35-n 2N2946 2N3735 2n2945 2N3737 2N2944A 25CC 2N3734 MMBTH81 2N3735 MOTOROLA TO-206AD
MMBT3960

Abstract: MMBT3960A MMBT4260 MMBT6543 3D MARKING SOT-23 MMBT4261 sot-23 Marking 3D 3D marking sot23 MMBC1321Q3 MMBC1321Q2
Text: 3.50 3.50 3.50 3.50 3.50 PNP MMBT4260 2R 2.000 10 10 2.50 MMBT4261 2S 2.000 10 10 2.50 MMBTH81 3D


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PDF OT-23 MMBT3960A MMBT3960 MMBT6543 MMBTH10 MMBC1321Q2 MMBC1321Q3 MMBC1321Q4 MMBC1321Q5 MMBT918 MMBT4260 3D MARKING SOT-23 MMBT4261 sot-23 Marking 3D 3D marking sot23
Not Available

Abstract: No abstract text available
Text: _ _ _ . böt T > U t.SD113D 0 0 3 1 5 2 8 ISA « N S C S RF Amplifiers Devices NPN 2N3663 2N5179 MMBT5179 MPS5179 2N5770 2N918 MMBT918 PN918 BF199 MMBTH10 MPSH10 MMBTH11 MPSH11 MMBTH24 MPSH24 MMBTH34 MPSH34 PN3563 MMBTH81 MPSH81 * TO-236AB is standard for all devices. Please refer to Surface Mount section for TO-236 Device Marking. N A T L S E n lC 0 N ]) (discrete) C#|, PF Max 1.70 1.0 1.0 1.0 1.1 1.7 1.7 1.7 0.35 Typ. 0.7 0.7 0.9 0.9 0.36 0.36 0.32 0.32 1.7 0.85 0.85 6 Typ. 60 V


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PDF SD113D 2N3663 2N5179 MMBT5179 MPS5179 2N5770 2N918 MMBT918 PN918 BF199
T3115

Abstract: No abstract text available
Text: MOTOROLA SC -CXSTRS/R F> (X S T R S /R F) V alue 20 20 3.0 Unit Vdc Vdc Vdc DËT|b3b7a5L| aaobh 96D Ö 206 6 D T-31-15 Sym bol 6 3 6 7 2 5 4 MOTOROLA SC M A X I M U M R A T IN G S R ating Collector-Emitter Voltage Coilector-Base V oltage Em itter-Base V oltage VCEO VcBO Ve b O MMBTH81 CASE 318-02/03, STYLE 6 SOT-23 (TO-236AA/AB) T H E R M A L C H A R A C T E R IS T IC S Characteristic Total Device Dissip ation FR-5 Board,* T a = 25°C Derate a bo ve 25°C Therm al Resistance Ju nction to A m


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PDF T-31-15 MMBTH81 OT-23 O-236AA/AB) T3115
2002 - PNP 3-224

Abstract: NPN Transistor PN100A 2N3906 Darlington transistor PNP 2N3904 2n3904 TRANSISTOR PNP 2N3906 NPN Transistor TRANSISTOR 3182 PNP switching transistor 2N3906 transistor 338 switching transistor
Text: . MPSH81 / MMBTH81 PNP RF Transistor


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PDF PN100 PN100A MMBT100 MMBT100A PN200 PN200A MMBT200 MMBT200A FPN330 FPN330A PNP 3-224 NPN Transistor PN100A 2N3906 Darlington transistor PNP 2N3904 2n3904 TRANSISTOR PNP 2N3906 NPN Transistor TRANSISTOR 3182 PNP switching transistor 2N3906 transistor 338 switching transistor
2002 - MMBT5770

Abstract: SS9018 MMBTH10 MMBT918 MMBT5179 KST5179 KST10 KSC3123 KSC2757 KSC2756
Text: 600 60 - 10 5 0.5 5 0.5 SOT-23 PNP Configuration MMBTH81 20 20 TO


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PDF OT-23 KST5179 MMBT5179 MMBT918 KSC2757 MMBT5770 KSC2223 KSC2756 KSC1675 MPSH24 MMBT5770 SS9018 MMBTH10 MMBT918 MMBT5179 KST5179 KST10 KSC3123 KSC2757 KSC2756
1N4548

Abstract: 1N4008 Diode 1N4008 1N4008 diode 1N1744A 1n4148 1N523b 2N4418 BAX15 1n5428
Text: MMBTH81 MMPQ2222 MMPQ2369 MMPQ2907 MMPQ3467 MMPQ3725 MMPQ3906 MMPQ3904 MMPQ6502 MMPQ6700 , MMBT5086 MMBTA92 MMBTA93 MMBTH10 MMBTH11 MMBTH20 MMBTH24 MMBTH34 MMBTH81 MMPQ2222 MMPQ2369 , MMBTA42 MMBTA43 MMBTA55 MMBTA56 MMBTA70 MMBTA92 MMBTA93 MMBTH10 MMBTH81 PN100 PN100A PN200


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PDF 1N100 1N100A 1N101 1N102 1N103 1N104 1N108 1N111 1N112 1N113 1N4548 1N4008 Diode 1N4008 1N4008 diode 1N1744A 1n4148 1N523b 2N4418 BAX15 1n5428
MMBD1502A

Abstract: MMBF102 MMBFJ270 MMBD1502 MMBD1702A 9G49 MMBFJ304 MMBD4448 splicing mps 1132
Text: MMBTA92 MMBTH11 MMBTH81 MMBZ5226B MMBZ5229B MMBZ5232B MMBZ5235B MMBZ5238B MMBZ5241B MMBZ5244B


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PDF note3646 MMBT3906 MMBT4354 MMBT4400 MMBT5087 MMBT5179 MMBT5550 MMBT5771 MMBT6428 MMBTA05 MMBD1502A MMBF102 MMBFJ270 MMBD1502 MMBD1702A 9G49 MMBFJ304 MMBD4448 splicing mps 1132
2002 - transistor 2N3563

Abstract: 2SK30 2n3819 cross reference 2sk41e 2SA726 transistor 2sc1417 2SC1026 2Sa1026 2SC2259 BC150 transistor
Text: No file text available


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mmbt2906a

Abstract: MMBTL51 MMBT2904A
Text: (Note 9) 74 240 250 D I ti5G113Q MMBTL51 MMBTH81 MMBTA92 100 20 300 100 20 300 4 3


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PDF O-236 mmbt2906a MMBTL51 MMBT2904A
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