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MMBTH10-TP Micro Commercial Components RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, ROHS COMPLIANT, PLASTIC PACKAGE-3
MMBTH10-7-F Diodes Incorporated RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, ROHS COMPLIANT, PLASTIC PACKAGE-3
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Part Manufacturer Supplier Stock Best Price Price Each Buy Part
MMBTH10 Fairchild Semiconductor Corporation Rochester Electronics 184,854 $0.05 $0.04
MMBTH10 Fairchild Semiconductor Corporation Bristol Electronics 2,872 - -
MMBTH10 ON Semiconductor Chip1Stop 2,846 $0.24 $0.24
MMBTH10 Fairchild Semiconductor Corporation Bristol Electronics 1,542 - -
MMBTH10 Fairchild Semiconductor Corporation Bristol Electronics 3,000 - -
MMBTH10 Fairchild Semiconductor Corporation America II Electronics 2,392 - -
MMBTH10 ON Semiconductor Farnell element14 2 £0.15 £0.05
MMBTH10 ON Semiconductor Chip1Stop 515,814 $0.07 $0.07
MMBTH10-4LT1G ON Semiconductor Avnet 15,000 $0.03 $0.03
MMBTH10-4LT1G ON Semiconductor Future Electronics - $0.06 $0.02
MMBTH10-4LT1G ON Semiconductor Future Electronics 42,000 $0.02 $0.02
MMBTH10-4LT1G ON Semiconductor Farnell element14 8,754 £0.17 £0.05
MMBTH10-4LT1G ON Semiconductor Newark element14 8,754 $0.23 $0.05
MMBTH10-4LT1G ON Semiconductor element14 Asia-Pacific 8,754 $0.18 $0.03
MMBTH10-4LT1G ON Semiconductor Wuhan P&S 500 $0.06 $0.04
MMBTH10-4LT1G ON SEMICONDUCTOR New Advantage Corporation 60,000 $0.06 $0.05
MMBTH10-4LT1G ON Semiconductor Avnet 12,000 €0.04 €0.02
MMBTH10-4LT1G. ON Semiconductor Newark element14 15,000 $0.24 $0.03
MMBTH10-7-F Diodes Incorporated Allied Electronics & Automation - $0.08 $0.07
MMBTH10-7-F Zetex / Diodes Inc RS Components 2,400 £0.05 £0.04
MMBTH10-7-F Diodes Incorporated Future Electronics - $0.02 $0.02
MMBTH10-7-F Diodes Incorporated Avnet 87,000 $0.04 $0.03
MMBTH10-7-F. Diodes Incorporated Newark element14 87,000 $0.05 $0.04
MMBTH107 Diodes Incorporated ComS.I.T. 3,000 - -
MMBTH10GAL3R Unisonic Technologies Co Ltd ComS.I.T. 3,000 - -
MMBTH10LT1 Motorola Semiconductor Products Bristol Electronics 33,000 - -
MMBTH10LT1 Motorola Semiconductor Products Bristol Electronics 4,158 - -
MMBTH10LT1 ON Semiconductor Bristol Electronics 5,227 - -
MMBTH10LT1 ON Semiconductor Chip One Exchange 2,607 - -
MMBTH10LT1 ON Semiconductor Rochester Electronics 9,431,048 $0.05 $0.04
MMBTH10LT1 ON Semiconductor America II Electronics 1,153 - -
MMBTH10LT1G ON Semiconductor America II Electronics 4,227 - -
MMBTH10LT1G ON Semiconductor Allied Electronics & Automation - $0.08 $0.08
MMBTH10LT1G ON Semiconductor Avnet 3,000 $0.11 $0.04
MMBTH10LT1G ON SEMICONDUCTOR New Advantage Corporation 207,000 $0.04 $0.04
MMBTH10LT1G ON Semiconductor Future Electronics 153,000 $0.02 $0.02
MMBTH10LT1G ON Semiconductor Farnell element14 9,658 £0.14 £0.03
MMBTH10LT1G ON Semiconductor element14 Asia-Pacific 9,013 $0.28 $0.03
MMBTH10LT1G ON Semiconductor element14 Asia-Pacific - $0.04 $0.03
MMBTH10LT1G ON Semiconductor RS Components 11,800 £0.04 £0.04
MMBTH10LT1G ON Semiconductor Chip1Stop 6,000 $0.04 $0.03
MMBTH10LT1G ON Semiconductor Chip1Stop 1,923 $0.06 $0.05
MMBTH10LT1G ON Semiconductor Avnet 66,000 $0.02 $0.02
MMBTH10LT1G ON Semiconductor Rochester Electronics 2,986,400 $0.05 $0.04
MMBTH10LT1G ON Semiconductor element14 Asia-Pacific 9,013 $0.28 $0.03
MMBTH10LT1G ON Semiconductor Schukat electronic 5,400 €0.06 €0.02
MMBTH10LT1G ON Semiconductor Wuhan P&S 2,050 $0.06 $0.04
MMBTH10LT1G ON Semiconductor Future Electronics - $0.05 $0.03
MMBTH10LT1G ON Semiconductor Newark element14 21,334 $0.23 $0.04
MMBTH10LT1G. ON Semiconductor Newark element14 66,000 $0.04 $0.03
MMBTH10LT3G ON Semiconductor RS Components 8,450 £0.02 £0.02
MMBTH10LT3G ON Semiconductor Rochester Electronics 160,000 $0.05 $0.04
MMBTH10LT3G ON Semiconductor Allied Electronics & Automation - $0.03 $0.03
MMBTH10M3T5G ON Semiconductor Wuhan P&S 3,150 $0.06 $0.04
MMBTH10M3T5G ON Semiconductor Chip1Stop 13,465 $0.03 $0.03
MMBTH10M3T5G ON Semiconductor Rochester Electronics 342,750 $0.05 $0.04
MMBTH10M3T5G ON Semiconductor RS Components 2,400 £0.04 £0.04
MMBTH10M3T5G ON Semiconductor Allied Electronics & Automation - $0.04 $0.03
MMBTH10RG ON Semiconductor Avnet - $0.04 $0.04
MMBTH10RG ON Semiconductor Chip1Stop 12,000 $0.20 $0.09
MMBTH10RG Fairchild Semiconductor Corporation Rochester Electronics 294,000 $0.09 $0.07
MMBTH10RG ON Semiconductor Future Electronics - $0.08 $0.08
NSVMMBTH10LT1G ON Semiconductor Farnell element14 2,330 £0.27 £0.11
NSVMMBTH10LT1G ON Semiconductor Allied Electronics & Automation - $0.10 $0.10
NSVMMBTH10LT1G ON Semiconductor RS Components 620 £0.18 £0.12
NSVMMBTH10LT1G ON Semiconductor Newark element14 2,330 $0.42 $0.13
NSVMMBTH10LT1G ON Semiconductor element14 Asia-Pacific 2,330 $0.51 $0.11

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MMBTH10 datasheet (47)

Part Manufacturer Description Type PDF
MMBTH10 Diodes NPN SURFACE MOUNT VHF/UHF TRANSISTOR Original PDF
MMBTH10 Diodes NPN SURFACE MOUNT VHF/UHF TRANSISTOR Original PDF
MMBTH10 Fairchild Semiconductor NPN RF Transistor Original PDF
MMBTH10 Fairchild Semiconductor NPN RF Transistor Original PDF
MMBTH10 Galaxy Semi-Conductor Holdings Silicon Epitaxial Planar Transistor Original PDF
MMBTH10 Kexin NPN Silicon VHF/UHF Transistor Original PDF
MMBTH10 Micro Commercial Components NPN VHF/UHF Transistor Original PDF
MMBTH10 National Semiconductor NPN RF Transistor Original PDF
MMBTH10 PanJit Semiconductors NPN HIGH FREQUENCY TRANSISTOR Original PDF
MMBTH10 Sinyork Mini size of Discrete semiconductor elements Original PDF
MMBTH10 TY Semiconductor NPN Silicon VHF/UHF Transistor - SOT-23 Original PDF
MMBTH10 Weitron NPN Silicon VHF/UHF Transistor Original PDF
MMBTH10 Motorola European Master Selection Guide 1986 Scan PDF
MMBTH10 Motorola NPN silicon VHF/UHF transistor. Scan PDF
MMBTH10 Others Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan PDF
MMBTH10 National Semiconductor Sulface Mount Transistors Scan PDF
MMBTH10 National Semiconductor RF Amplifiers Scan PDF
MMBTH10-4LT1 On Semiconductor VHF/UHF Transistor Original PDF
MMBTH10-4LT1 On Semiconductor VHF/UHF Transistor (NPN Silicon) Original PDF
MMBTH10-4LT1 On Semiconductor MMBTH10 - TRANSISTOR UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-236AB, CASE 318-08, 3 PIN, BIP RF Small Signal Original PDF

MMBTH10 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
MMBTH10 Spice Model

Abstract: No abstract text available
Text: S iM E C D fC U C T O R MPSH10 MMBTH10 Mark: 3E NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 pA to 20 mA range in , * MMBTH10 225 1.8 357 556 mW mW/°C °C/W °C/W MPSH10 / MMBTH10 Discrete POWER & Signal , =10) MPSH10 / MMBTH10 NPN RF Transistor MPSH10 / MMBTH10 MPSH10 / MMBTH10 MPSH10 / MMBTH10 , FIGURE 2: 500 MHz Oscillator Circuit MPSH10 / MMBTH10 NPN RF Transistor


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PDF MPSH10 MMBTH10 28E-18 MPSH10 MMBTH10 Spice Model
2009 - transistor marking JB

Abstract: MMBTH10-4LT1G MMBTH10 MMBTH10LT1 MMBTH10LT1G MMBTH10LT3G
Text: MMBTH10LT1G , MMBTH10-4LT1G VHF/UHF Transistor NPN Silicon Features http://onsemi.com · , 417 -55 to +150 3E4 MG G MMBTH10-04LT1G °C/W TJ, Tstg 3EM MG G MMBTH10LT1G , MMBTH10LT3G SOT-23 (Pb-Free) 10000/Tape & Reel MMBTH10-4LT1G SOT-23 (Pb-Free) 3000/Tape & , MMBTH10LT1G , MMBTH10-4LT1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Min , ) MMBTH10LT1 MMBTH10-4LT1 Collector-Emitter Saturation Voltage (IC = 4.0 mAdc, IB = 0.4 mAdc


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PDF MMBTH10LT1G, MMBTH10-4LT1G MMBTH10LT1/D transistor marking JB MMBTH10-4LT1G MMBTH10 MMBTH10LT1 MMBTH10LT1G MMBTH10LT3G
2001 - transistor marking 3em

Abstract: MMBTH10LT1 mmbth10 MMBTH10-4LT1
Text: MMBTH10LT1 , MMBTH10-4LT1 Preferred Devices VHF/UHF Transistor NPN Silicon · Device Marking , INFORMATION Device Package Shipping MMBTH10LT1 SOT­23 3000/Tape & Reel MMBTH10­4LT1 (1 , : MMBTH10LT1 /D MMBTH10LT1 , MMBTH10­4LT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted , = 4.0 mAdc, VCE = 10 Vdc) hFE MMBTH10LT1 MMBTH10­4LT1 Collector­Emitter Saturation Voltage , ) fT MMBTH10LT1 MMBTH10­4LT1 MHz Collector­Base Capacitance (VCB= 10 Vdc, IE = 0, f = 1.0 MHz


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PDF MMBTH10LT1, MMBTH10-4LT1 r14525 MMBTH10LT1/D transistor marking 3em MMBTH10LT1 mmbth10 MMBTH10-4LT1
2014 - Not Available

Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD MMBTH10 NPN SILICON TRANSISTOR RF TRANSISTOR DESCRIPTION  The UTC MMBTH10 is designed for using as VHF and UHF oscillators and VHF Mixer in a tuner of a TV receiver.  ORDERING INFORMATION Ordering Number Note:  MMBTH10G-x-AE3-R MMBTH10G-x-AL3-R MMBTH10G-x-AN3-R MMBTH10G-x-AQ3-R Pin Assignment: E: Emitter B: Base Package SOT-23 SOT , Unisonic Technologies Co., Ltd 1 of 5 QW-R206-003.H MMBTH10  NPN SILICON TRANSISTOR


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PDF MMBTH10 MMBTH10 MMBTH10G-x-AE3-R MMBTH10G-x-AL3-R MMBTH10G-x-AN3-R MMBTH10G-x-AQ3-R OT-23 OT-323 OT-523 OT-723
2001 - Not Available

Abstract: No abstract text available
Text: MMBTH10LT1 , MMBTH10-4LT1 Preferred Devices VHF/UHF Transistor NPN Silicon · Device Marking , MMBTH10LT1 MMBTH10­4LT1 Package SOT­23 SOT­23 Shipping 3000/Tape & Reel 3000/Tape & Reel (1) FR­5 = 1.0 x , June, 2000 ­ Rev. 1 Publication Order Number: MMBTH10LT1 /D MMBTH10LT1 , MMBTH10­4LT1 ELECTRICAL , 31.8 MHz) fT MMBTH10LT1 MMBTH10­4LT1 Ccb Crb rbCc 650 800 - - - - - - - - - - 0.7 0.65 9.0 pF pF ps MHz hFE MMBTH10LT1 MMBTH10­4LT1 VCE(sat) VBE 60 120 - - - - - - - 240 0.5 0.95 Vdc Vdc


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PDF MMBTH10LT1, MMBTH10-4LT1
2004 - transistor marking 3em

Abstract: 556 ITT MMBTH10 sot-23 Marking YRE
Text: . Device Marking MMBTH10=3EM , HT10 WEITRON http://www.weitron.com.tw 1/6 09-Feb-07 MMBTH10 , MMBTH10 NPN 1.1 GHz RF Transistor COLLECTOR 3 P b Lead(Pb)-Free 1 BASE 2 , -Feb-07 MMBTH10 Typical Characteristics 100 VCESAT- COLLECTOR-EMITTER VOLTAGE (V) h FE - TYPICAL PULSED , TEMPERATURE ( o C) 125 150 09-Feb-07 MMBTH10 Common Base Y Parameters vs. Frequency Output , -Feb-07 MMBTH10 Common Emitter Y Parameters vs. Frequency Yoe - OUTPUT ADMITTANCE (mmhos) Output Admittance


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PDF MMBTH10 100mA OT-23 09-Feb-07 OT-23Package transistor marking 3em 556 ITT MMBTH10 sot-23 Marking YRE
2012 - marking Specific Device Code Date Code sot-23 4l

Abstract: transistor 3em
Text: MMBTH10L , MMBTH10-4L , SMMBTH10-4L, NSVMMBTH10L VHF/UHF Transistor NPN Silicon Features http , MMBTH10LT1G , NSVMMBTH10LT1G MMBTH10-04LT1G 3EM, 3E4 = Specific Device Code M = Date Code* G = Pb-Free , depending upon manufacturing location. ORDERING INFORMATION Device MMBTH10LT1G NSVMMBTH10LT1G MMBTH10-4LT1G , MMBTH10L , MMBTH10-4L , SMMBTH10-4L, NSVMMBTH10L ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise , CHARACTERISTICS DC Current Gain (IC = 4.0 mAdc, VCE = 10 Vdc) MMBTH10LT1G , NSVMMBTH10LT1G MMBTH10-4LT1G , SMMBTH10


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PDF MMBTH10L, MMBTH10-4L, SMMBTH10-4L, NSVMMBTH10L AEC-Q101 OT-23 O-236) MMBTH10LT1/D marking Specific Device Code Date Code sot-23 4l transistor 3em
transistor marking 3em

Abstract: TRANSISTOR K 135 J 50 transistor marking code SOT-23 SOT-23 transistor code PB TRANSISTOR K 135 transistor marking code 3EM SOT-23 marking 3EM sot-23 marking code PC sot-23 3em sot-23 marking pc sot-23 transistor
Text: MMBTH10 Pb High transition frequency. Lead-free Power dissipation.(PC=350mW) APPLICATIONS VHF/UHF Transistor. SOT-23 ORDERING INFORMATION Type No. Marking Package Code MMBTH10 , Electrical Silicon Epitaxial Planar Transistor Production specification MMBTH10 TYPICAL , BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor MMBTH10 , Package Shipping MMBTH10 SOT-23 3000/Tape&Reel Document number: BL/SSSTC125 Rev.A


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PDF MMBTH10 350mW) OT-23 BL/SSSTC125 transistor marking 3em TRANSISTOR K 135 J 50 transistor marking code SOT-23 SOT-23 transistor code PB TRANSISTOR K 135 transistor marking code 3EM SOT-23 marking 3EM sot-23 marking code PC sot-23 3em sot-23 marking pc sot-23 transistor
2005 - MMBTH10 Spice Model

Abstract: No abstract text available
Text: self-heating effect. 3. No purposefully added lead. DS31031 Rev. 7 - 2 1 of 3 www.diodes.com MMBTH10 ã Diodes Incorporated Ordering Information Device MMBTH10-7 Notes: (Note 4) Packaging SOT , number above. Example: MMBTH10-7-F. Marking Information K3x Date Code Key Year Code Month Code , SPICE MODEL: MMBTH10 MMBTH10 NPN SURFACE MOUNT VHF/UHF TRANSISTOR Features · · · · Designed , VCBO VCEO VEBO IC Pd RqJA Tj, TSTG MMBTH10 30 25 3.0 50 300 417 -55 to +150 Unit V V V mA mW °C/W °C


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PDF MMBTH10 100mA OT-23 OT-23 J-STD-020C MIL-STD-202, DS31031 MMBTH10 Spice Model
Not Available

Abstract: No abstract text available
Text: www.diodes.com MMBTH10 © Diodes Incorporated DS31031 Rev. 12 - 2 2 of 3 www.diodes.com MMBTH10 © Diodes Incorporated Ordering Information (Note 5) Packaging SOT-23 Device MMBTH10-7-F Notes , MMBTH10 NPN SURFACE MOUNT VHF/UHF TRANSISTOR Features • • • • • Designed for VHF/UHF Amplifier Applications and High Output VHF Oscillators High Current Gain Bandwidth Product , Diodes Incorporated. DS31031 Rev. 12 - 2 3 of 3 www.diodes.com MMBTH10 © Diodes Incorporated


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PDF MMBTH10 AEC-Q101 OT-23 DS31031
2002 - mpsh10

Abstract: MPSH10 fairchild transistor MPSH10 s parameters TF135 MMBTH10 Spice Model MPS-H10 BF308 1358p
Text: MPSH10 / MMBTH10 MPSH10 MMBTH10 C C E TO-92 B E SOT-23 Mark: 3E B NPN , Resistance, Junction to Ambient MPSH10 350 2.8 125 357 Max * MMBTH10 225 1.8 556 Units mW mW/°C °C/W , 3-282 MPSH10 / MMBTH10 NPN RF Transistor Electrical Characteristics Symbol Parameter TA = 25 , =.75 Tr=1.558n Tf=135.8p Itf=.27 Vtf=10 Xtf=30 Rb=10) 3-283 MPSH10 / MMBTH10 NPN RF Transistor , 3-284 MPSH10 / MMBTH10 NPN RF Transistor Common Base Y Parameters vs. Frequency (continued


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PDF MPSH10 MMBTH10 MPSH10 OT-23 MPSH10 fairchild transistor MPSH10 s parameters TF135 MMBTH10 Spice Model MPS-H10 BF308 1358p
2012 - Not Available

Abstract: No abstract text available
Text: Halogen Free MMBTH10L-x-AE3-R MMBTH10G-x-AE3-R MMBTH10L-x-AL3-R MMBTH10G-x-AL3-R MMBTH10L-x-AN3-R MMBTH10G-x-AN3-R MMBTH10L-x-AQ3-R MMBTH10G-x-AQ3-R ̈ Package SOT-23 SOT-323 SOT-523 SOT-723 Pin , UNISO TE NIC CHNO G SCO LTD LO IE ., MMBTH10 NPN SILICON TRANSISTOR RF T RAN SI ST OR ̈ DESCRI PT I ON The UTC MMBTH10 is designed for using as VHF and UHF oscillators and VHF Mixer in a , QW-R206-003.G MMBTH10 ̈ NPN SILICON TRANSISTOR ABSOLU T E M AX I M U M RAT I N G (TA


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PDF MMBTH10 MMBTH10 MMBTH10L-x-AE3-R MMBTH10G-x-AE3-R MMBTH10L-x-AL3-R MMBTH10G-x-AL3-R MMBTH10L-x-AN3-R MMBTH10G-x-AN3-R MMBTH10L-x-AQ3-R MMBTH10G-x-AQ3-R
2005 - Not Available

Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD MMBTH10 NPN SILICON TRANSISTOR RF TRANSISTOR DESCRIPTION The UTC MMBTH10 is designed for using as VHF and UHF oscillators and VHF Mixer in a tuner of a TV receiver. 3 1 2 SOT-23 *Pb-free plating product number: MMBTH10L ORDERING INFORMATION Order Number Normal Lead Free Plating MMBTH10-x-AE3-R MMBTH10L-x-AE3-R Package SOT-23 Pin Assignment 1 2 3 E B C Packing Tape Reel MMBTH10L-x-AE3-R (1)Packing Type (1) T: Tube (2


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PDF MMBTH10 MMBTH10 OT-23 MMBTH10L MMBTH10-x-AE3-R MMBTH10L-x-AE3-R QW-R206-003
2004 - Not Available

Abstract: No abstract text available
Text: UTC MMBTH10 RF TRANSISTOR DESCRIPTION NPN EPITAXIAL SILICON TRANSISTOR The UTC MMBTH10 is , QW-R206-003,D UTC MMBTH10 Typical Characteristics hFE - TYPICAL PULSED CURRENT GAIN NPN EPITAXIAL , UTC MMBTH10 Yib - INPUT ADMITTANCE (mmhos) 120 80 40 0 -40 -80 -120 0 bib VCE=10V Ic=5mA NPN , 3 QW-R206-003,D UTC MMBTH10 Yfe - FORWARD ADMITTANCE (mmhos) 60 40 20 0 -20 -40 -60 100 bfe , UNISONIC TECHNOLOGIES CO. LTD 4 QW-R206-003,D UTC MMBTH10 NPN EPITAXIAL SILICON TRANSISTOR


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PDF MMBTH10 MMBTH10 OT-23 QW-R206-003
2003 - mps 1049

Abstract: JB marking transistor Marking H11 sot marking JB sot23 JB MARKING SOT-23
Text: MMBTH10LT1 , MMBTH10-4LT1 Preferred Devices VHF/UHF Transistor NPN Silicon · Device Marking , MMBTH10LT1G MMBTH10-4LT1 Package SOT-23 SOT-23 (Pb-Free) SOT-23 Shipping 3000/Tape & Reel 3000/Tape & Reel , 1048 December, 2003 - Rev. 2 Publication Order Number: MMBTH10LT1 /D MMBTH10LT1 , MMBTH10-4LT1 , 31.8 MHz) fT MMBTH10LT1 MMBTH10-4LT1 Ccb Crb rbCc 650 800 - - - - - - - - - - 0.7 0.65 9.0 pF pF ps MHz hFE MMBTH10LT1 MMBTH10-4LT1 VCE(sat) VBE 60 120 - - - - - - - 240 0.5 0.95 Vdc Vdc - V(BR)CEO V(BR)CBO


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PDF MMBTH10LT1, MMBTH10-4LT1 mps 1049 JB marking transistor Marking H11 sot marking JB sot23 JB MARKING SOT-23
1997 - MPSH10 fairchild transistor

Abstract: MMBTH10 Spice Model MPS-H10 MMBTH10 MPSH10 TRANSISTOR C 3223 1358p
Text: MPSH10 MMBTH10 C E C E TO-92 SOT-23 B B Mark: 3E NPN RF Transistor This , Fairchild Semiconductor Corporation Max Units MPSH10 350 2.8 125 * MMBTH10 225 1.8 357 556 mW mW/°C °C/W °C/W MPSH10 / MMBTH10 Discrete POWER & Signal Technologies , =1.558n Tf=135.8p Itf=.27 Vtf=10 Xtf=30 Rb=10) MPSH10 / MMBTH10 NPN RF Transistor (continued , MPSH10 / MMBTH10 NPN RF Transistor (continued) Common Base Y Parameters vs. Frequency Output


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PDF MPSH10 MMBTH10 OT-23 MPSH10 MPSH10 fairchild transistor MMBTH10 Spice Model MPS-H10 MMBTH10 TRANSISTOR C 3223 1358p
mpsh10

Abstract: MPS-H10
Text: MPSH10 / MMBTH10 Discrete POW ER & Signal Technologies S S M ÎO Q N Q U O T Q R MPSH10 MMBTH10 SOT-23 M ark: 3E NPN RF Transistor T h is d e v ic e is d e s ig n e d fo r use in lo w n , bient 350 2.8 125 357 Max ` MMBTH10 225 1.8 Units mW m W /°C °C /W 556 °C /W * D e v ic e m , tio n MPSH10 / MMBTH10 NPN RF Transistor (co n tin u e d ) Electrical Characteristics , V tf= 1 0 X tf= 3 0 R b= 10 ) MPSH10 / MMBTH10 NPN RF Transistor (c o n tin u e d


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PDF MPSH10 MMBTH10 MPSH10 OT-23 MPS-H10
JB marking transistor

Abstract: transistor marking 3em transistor marking JB MMBTH10 J JB transistor marking 3EM sot-23 C40 SOT23
Text: Storage, Temperature C/W C Device Marking MMBTH10=3EM ELECTRICAL CHARACTERISTICS , MMBTH10 NPN Silicon VHF/UHF Transistor COLLECTOR 3 P b Lead(Pb)-Free 1 BASE 2 , ://www.weitron.com.tw 1/5 29-Aug-05 MMBTH10 ELECTRICAL CHARACTERISTICS (TA =25 C unless otherwise noted , MMBTH10 0 70 gib 60 50 jb jb(mmhos) yib, INPUT ADMITTANCE(mmhos) 80 ib 40 30 , 2.0 MMBTH10 10 1000 MH z 8.0 8.0 7.0 700 j bob(mmhos) yob, OUTPUT ADMITTANCE


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PDF MMBTH10 OT-23 MMBTH10 OT-23 JB marking transistor transistor marking 3em transistor marking JB J JB transistor marking 3EM sot-23 C40 SOT23
2011 - transistor marking code 3EM SOT-23

Abstract: Marking code mps MMBTH10-4LT1G MMBTH10LT1G NSVMMBTH10 transistor 3em transistor marking 3em
Text: MMBTH10LT1G , NSVMMBTH10LT1G, MMBTH10LT3G , MMBTH10-4LT1G VHF/UHF Transistor NPN Silicon Features , MMBTH10LT1G , NSVMMBTH10LT1G, MMBTH10LT3G , MMBTH10-4LT1G ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise , ://onsemi.com 2 MMBTH10LT1G , NSVMMBTH10LT1G, MMBTH10LT3G , MMBTH10-4LT1G TYPICAL CHARACTERISTICS , Figure 4. Polar Form http://onsemi.com 3 MMBTH10LT1G , NSVMMBTH10LT1G, MMBTH10LT3G , MMBTH10-4LT1G , MMBTH10LT1G , NSVMMBTH10LT1G, MMBTH10LT3G , MMBTH10-4LT1G PACKAGE DIMENSIONS SOT-23 (TO-236) CASE 318-08 ISSUE


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PDF MMBTH10LT1G, NSVMMBTH10LT1G, MMBTH10LT3G, MMBTH10-4LT1G AEC-Q101 OT-23 O-236) MMBTH10LT1/D transistor marking code 3EM SOT-23 Marking code mps MMBTH10LT1G NSVMMBTH10 transistor 3em transistor marking 3em
2012 - Not Available

Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD MMBTH10 RF TRANSISTOR DESCRIPTION NPN SILICON TRANSISTOR The UTC MMBTH10 is designed for using as VHF and UHF oscillators and VHF Mixer in a tuner of a TV receiver. ORDERING INFORMATION Ordering Number Lead Free Plating Halogen Free MMBTH10L-x-AE3-R MMBTH10G-x-AE3-R MMBTH10L-x-AL3-R MMBTH10G-x-AL3-R MMBTH10L-x-AN3-R MMBTH10G-x-AN3-R MMBTH10L-x-AQ3-R MMBTH10G-x-AQ3-R Package SOT-23 SOT-323 SOT-523 SOT-723 Pin Assignment 1 2 3 E B C E B C E B C E B C Packing Tape


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PDF MMBTH10 MMBTH10 MMBTH10L-x-AE3-R MMBTH10G-x-AE3-R MMBTH10L-x-AL3-R MMBTH10G-x-AL3-R MMBTH10L-x-AN3-R MMBTH10G-x-AN3-R MMBTH10L-x-AQ3-R MMBTH10G-x-AQ3-R
1996 - MPSH10

Abstract: MMBTH10 Spice Model NPN power transistor spice y-parameter MMBTH10 TRANSISTOR C 3223 MPS-H10 MPSH10 s parameters
Text: MPSH10 MMBTH10 C E C E TO-92 SOT-23 B B Mark: 3E NPN RF Transistor This , Units MPSH10 350 2.8 125 * MMBTH10 225 1.8 357 556 mW mW/°C °C/W °C/W MPSH10 / MMBTH10 N Discrete POWER & Signal Technologies (continued) Electrical Characteristics , =30 Rb=10) MPSH10 / MMBTH10 NPN RF Transistor (continued) 100 Vce = 5V 80 125 °C , 0 25 50 75 100 TEMPERATURE ( o C) 125 150 MPSH10 / MMBTH10 NPN RF Transistor


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PDF MPSH10 MMBTH10 OT-23 MPSH10 MMBTH10 Spice Model NPN power transistor spice y-parameter MMBTH10 TRANSISTOR C 3223 MPS-H10 MPSH10 s parameters
2005 - 2k3h

Abstract: MMBTH10 Spice Model
Text: self-heating effect. 3. No purposefully added lead. DS31031 Rev. 9 - 2 1 of 3 www.diodes.com MMBTH10 ã Diodes Incorporated Ordering Information Device MMBTH10-7-F Notes: (Note 4) Packaging SOT , SPICE MODEL: MMBTH10 MMBTH10 NPN SURFACE MOUNT VHF/UHF TRANSISTOR Features · · · · · · · · · · , RqJA Tj, TSTG MMBTH10 30 25 3.0 50 300 417 -55 to +150 Unit V V V mA mW °C/W °C Characteristic , Saturation Voltage vs. Collector Current 1000 DS31031 Rev. 9 - 2 2 of 3 www.diodes.com MMBTH10


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PDF MMBTH10 100mA AEC-Q101 OT-23 OT-23 J-STD-020C DS31031 2k3h MMBTH10 Spice Model
2003 - transistor marking 3em

Abstract: MMBTH10 MMBTH10LT1G MMBTH10LT1 TRANSISTOR AH 2
Text: MMBTH10LT1 , MMBTH10-4LT1 Preferred Devices VHF/UHF Transistor NPN Silicon · Device Marking , 1 Publication Order Number: MMBTH10LT1 /D MMBTH10LT1 , MMBTH10-4LT1 ELECTRICAL , Current Gain (IC = 4.0 mAdc, VCE = 10 Vdc) hFE MMBTH10LT1 MMBTH10-4LT1 Collector-Emitter , = 100 MHz) fT MMBTH10LT1 MMBTH10-4LT1 MHz Collector-Base Capacitance (VCB= 10 Vdc, IE = , ) 0 Figure 4. Polar Form http://onsemi.com 3 -10 -20 -30 MMBTH10LT1 , MMBTH10-4LT1


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PDF MMBTH10LT1, MMBTH10-4LT1 MMBTH10LT1/D transistor marking 3em MMBTH10 MMBTH10LT1G MMBTH10LT1 TRANSISTOR AH 2
2009 - MMBTH10

Abstract: MMBTH10G sot-23 Marking YRE MMBTH10L
Text: UNISONIC TECHNOLOGIES CO., LTD MMBTH10 NPN SILICON TRANSISTOR RF TRANSISTOR DESCRIPTION The UTC MMBTH10 is designed for using as VHF and UHF oscillators and VHF Mixer in a tuner of a TV receiver. Lead-free: MMBTH10L Halogen-free: MMBTH10G ORDERING INFORMATION Ordering Number Normal Lead Free Plating Halogen Free MMBTH10-x-AE3-R MMBTH10L-x-AE3-R MMBTH10G-x-AE3-R MMBTH10-x-AL3-R MMBTH10L-x-AL3-R MMBTH10G-x-AL3-R MMBTH10-x-AN3-R MMBTH10L-x-AN3-R MMBTH10G-x-AN3-R Package SOT-23 SOT


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PDF MMBTH10 MMBTH10 MMBTH10L MMBTH10G MMBTH10-x-AE3-R MMBTH10L-x-AE3-R MMBTH10G-x-AE3-R MMBTH10-x-AL3-R MMBTH10L-x-AL3-R MMBTH10G-x-AL3-R MMBTH10G sot-23 Marking YRE MMBTH10L
2007 - Not Available

Abstract: No abstract text available
Text: code_Version MMBTH10_R1_00001 MMBTH10_R2_00001 For example : RB500V-40_R2_00001 Part No. Serial number , MMBTH10 VHF/UHF NPN SILICON TRANSISTOR VOLTAGE FEATURES · NPN Silicon 0.120(3.04) 25 Volts , -REV.01 PAGE . 1 MMBTH10 ELECTRICAL CHARACTERISTICS (T =25 C , unless otherwise noted) A O C H A R A , September 20,2012-REV.01 PAGE . 2 MMBTH10 80 y ib , INPUT ADMITTANCE (mmhos) 70 60 -b ib jb ib , 700 Figure 3. Rectangular Form Figure 4. Polar Form 6HSWHPEHU5(9 PAGE . 3 MMBTH10 y


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PDF MMBTH10 OT-23 OT-23, MIL-STD-750,
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