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ON Semiconductor
MMBT5210 BIPOLAR TRANSISTOR, NPN, 50V, FULL REEL; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:50V; Transition Frequency ft:30MHz; Power Dissipation Pd:350mW; DC Collector Current:100mA; DC Current Gain hFE:200hFE RoHS Compliant: Yes MMBT5210 ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000 Buy
Newark element14 MMBT5210 Reel 0 18,000 - - - - - Buy Now
element14 Asia-Pacific (2) MMBT5210 0 5 - $0.32 $0.17 $0.17 $0.17 Buy Now
MMBT5210 0 5 - $0.32 $0.17 $0.17 $0.17 Buy Now
Farnell element14 (2) MMBT5210 0 5 - £0.14 £0.056 £0.027 £0.023 Buy Now
MMBT5210 0 5 - £0.14 £0.056 £0.027 £0.023 Buy Now
Fairchild Semiconductor Corporation
MMBT5210 MMBT5210 ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000 Buy
Bristol Electronics (2) MMBT5210 76,725 - - - - - Buy Now
MMBT5210 1,658 - - - - - Buy Now

MMBT5210 datasheet (4)

Part ECAD Model Manufacturer Description Type PDF
MMBT5210 MMBT5210 ECAD Model Fairchild Semiconductor NPN General Purpose Amplifier Original PDF
MMBT5210 MMBT5210 ECAD Model Others Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan PDF
MMBT5210 MMBT5210 ECAD Model National Semiconductor NPN General Purpose Transistors Scan PDF
MMBT5210_NL MMBT5210_NL ECAD Model Fairchild Semiconductor NPN General Purpose Amplifer Original PDF

MMBT5210 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2002 - 2n5210

Abstract: No abstract text available
Text: 2N5210/ MMBT5210 2N5210/ MMBT5210 NPN General Purpose Amplifier C This device is designed for , Corporation Max. 2N5210 625 5.0 83.3 MMBT5210 350 2.8 200 357 Units mW mW/°C °C/W , IEBO Emitter Cutoff Current VEB = 3.0 V, IC = 0 50 2N5210/ MMBT5210 NPN General Purpose , ( °C) 150 2N5210/ MMBT5210 NPN General Purpose Amplifier (continued) Typical , 10 10 2N5210/ MMBT5210 NPN General Purpose Amplifier 100 0.75 TO-92 0.50 SOT


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PDF 2N5210/MMBT5210 OT-23 2n5210
2002 - 2N5210

Abstract: MMBT5210 2n5210 equivalent
Text: 2N5210/ MMBT5210 2N5210/ MMBT5210 NPN General Purpose Amplifier C This device is designed for , Corporation Max. 2N5210 625 5.0 83.3 MMBT5210 350 2.8 200 357 Units mW mW/°C °C/W °C , IEBO Emitter Cutoff Current VEB = 3.0 V, IC = 0 50 2N5210/ MMBT5210 NPN General Purpose , ) 150 2N5210/ MMBT5210 NPN General Purpose Amplifier (continued) Typical Characteristics , VALUE AT T A = 25 C 0 10 2N5210/ MMBT5210 NPN General Purpose Amplifier 10 100 0.75


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PDF 2N5210/MMBT5210 OT-23 2N5210 MMBT5210 2n5210 equivalent
2002 - MMBT5210

Abstract: 3CTE
Text: 2N5210/ MMBT5210 2N5210/ MMBT5210 NPN General Purpose Amplifier C This device is designed for , Max. 2N5210 625 5.0 83.3 200 MMBT5210 350 2.8 357 Units mW mW/°C °C/W °C/W 2002 Fairchild Semiconductor Corporation 2N5210, Rev B 2N5210/ MMBT5210 NPN General Purpose Amplifier (continued , % 2N5210/ MMBT5210 NPN General Purpose Amplifier (continued) Typical Characteristics 1200 VBEON , / MMBT5210 NPN General Purpose Amplifier (continued) Typical Characteristics (continued) Input


Original
PDF 2N5210/MMBT5210 OT-23 2N5210TA 2N5210BU 2N5210 O-92-3 MMBT5210 3CTE
2002 - 2N5210

Abstract: No abstract text available
Text: 2N5210/ MMBT5210 2N5210/ MMBT5210 NPN General Purpose Amplifier C This device is designed for , Max. 2N5210 625 5.0 83.3 200 MMBT5210 350 2.8 357 Units mW mW/°C °C/W °C/W 2002 Fairchild Semiconductor Corporation 2N5210, Rev B 2N5210/ MMBT5210 NPN General Purpose Amplifier (continued , % 2N5210/ MMBT5210 NPN General Purpose Amplifier (continued) Typical Characteristics 1200 VBEON , / MMBT5210 NPN General Purpose Amplifier (continued) Typical Characteristics (continued) Input


Original
PDF 2N5210/MMBT5210 OT-23 2N5210 O-92-3 2N5210BU 2N5210NMBU 2N5210TA 2N5210TAR 2N5210TF
2N2210

Abstract: transistor 2N2210 TN2218A TIS92 PN3694 2N3827 TIS90 MPS6564 2N2586 2N5962
Text: 100 300 0.1/5.0 30 TO-236 MMBT5210 50 50 200 600 0.1/5.0 30 TO-236 2N1890 60 100 100 300 150/10 60


OCR Scan
PDF bS01130 D037774 PN5816 TIS90 TIS92 TIS97 TN2218A O-237 TN2219A 2N2210 transistor 2N2210 PN3694 2N3827 MPS6564 2N2586 2N5962
TIS90

Abstract: MPS6566 TIS97
Text: MMBT4409 MMBT5209 MMBT5210 2N1890 2N2484 2N3107 2N3108 2N3117 Vceo (V) VCbo(V) · H,e Min 100 100 100


OCR Scan
PDF bS01130 D03777M PN5816 TIS90 TIS92 TIS97 TN2218A TN2219A 2N2270 2N2586 MPS6566
MMBT5133

Abstract: No abstract text available
Text: MMBT5210 50 50 50 35 0.7 10 4 30 0.5 3 (Note 4) 11 600 MMBT5961


OCR Scan
PDF MMBT930 O-236 MMBT5962 MMBT5133
2010 - bcy591x

Abstract: 2N6429A sot23 12p BCY590 2SC538A BC107C BC521 LOW-POWER SILICON NPN TMPT6429 BCY59C
Text: 80 033021 033021 033021 MMBT5210 PE107S 2N13B9 2N1338 2N1506A BFT84 KT645A >= 50 V SprgueElec


Original
PDF BC382 KSC1072 2SC538A BCX59-9 BCX70J BCY591X TBC337A BCW66RG 2N6429A sot23 12p BCY590 BC107C BC521 LOW-POWER SILICON NPN TMPT6429 BCY59C
MMBD1502A

Abstract: MMBF102 MMBFJ270 MMBD1502 MMBD1702A 9G49 MMBFJ304 MMBD4448 splicing mps 1132
Text: MMBT5210 MMBT5551 MMBT5962 MMBT6515 MMBTA06 MMBTA42 MMBTA63 MMBTH10 MMBTH24 MMBZ5221B MMBZ5227B


Original
PDF note3646 MMBT3906 MMBT4354 MMBT4400 MMBT5087 MMBT5179 MMBT5550 MMBT5771 MMBT6428 MMBTA05 MMBD1502A MMBF102 MMBFJ270 MMBD1502 MMBD1702A 9G49 MMBFJ304 MMBD4448 splicing mps 1132
2010 - bcy591x

Abstract: 2N6429A 2N2161 2N2196 2SC538A 2N2147 2N2214 KT645A 2N2207 trw hybrid
Text: 80 033021 033021 033021 MMBT5210 PE107S 2N13B9 2N1338 2N1506A BFT84 KT645A >= 50 V SprgueElec


Original
PDF BC382 KSC1072 2SC538A BCX59-9 BCX70J BCY591X TBC337A BCW66RG 2N6429A 2N2161 2N2196 2N2147 2N2214 KT645A 2N2207 trw hybrid
2002 - transistor 2N3563

Abstract: 2SK30 2n3819 cross reference 2sk41e 2SA726 transistor 2sc1417 2SC1026 2Sa1026 2SC2259 BC150 transistor
Text: No file text available


Original
PDF
2002 - MPSA92(KSP92) equivalent

Abstract: BC214L equivalent MMBT3646 ss8550 TN6727A SS8050 KSP2222A equivalent MMBT5771 MPSA18 BC550 BC369
Text: ) Min Max @VCE (V) @IC (mA) VCE (sat) (V) @IC (mA) @IB (mA) MMBT5210 50 50


Original
PDF OT-223 BCP68 FZT649 NZT6714 PZT3904 PZT2222A NZT6715 BCP54 KSC2785 KSC2784 MPSA92(KSP92) equivalent BC214L equivalent MMBT3646 ss8550 TN6727A SS8050 KSP2222A equivalent MMBT5771 MPSA18 BC550 BC369
SSP35n03

Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Text: No file text available


Original
PDF 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
2002 - TRANSISTORS BJT bc548

Abstract: jfet selection guide J210 D2 PAK TN2102A PN4302 FJN965 BJT BC546 MPF102 JFET data sheet ks3302 KSP13
Text: MMBT5210 MMBT3416 MMBT6428 KST2484 MMBT2484 BCW89 KST05 KST55 MMBTA55 BCV71 BCV72 MMBTA05


Original
PDF OT-623F OT-323 OT-23 OT-89 OT-223 O-92S O-226AE O-92L TRANSISTORS BJT bc548 jfet selection guide J210 D2 PAK TN2102A PN4302 FJN965 BJT BC546 MPF102 JFET data sheet ks3302 KSP13
1999 - ss8050 d 331

Abstract: tip122 tip127 mosfet audio amp KSD180 KA1M0880 application note SS8550 D 331 dual cc BAW62 KA2S0680 ss8550 sot-23 DIODE 1N4148 LL-34 MPSA92(KSP92) equivalent
Text: MMBT5088 MMBT5089 MMBT5179 MMBT5210 MMBT5401 MMBT5551 MMBT5770 MMBT5771 MMBT5962 MMBT6427


Original
PDF F-91742 ss8050 d 331 tip122 tip127 mosfet audio amp KSD180 KA1M0880 application note SS8550 D 331 dual cc BAW62 KA2S0680 ss8550 sot-23 DIODE 1N4148 LL-34 MPSA92(KSP92) equivalent
FQPF*7N65C APPLICATIONS

Abstract: bc548 spice model bf494 spice model spice model bf199 LM3171 MOC3043-M spice model bc547 spice model BC517 spice model BF494 spice SPICE model BC237
Text: No file text available


Original
PDF UF4003. UF4004. UF4005. UF4006. UF4007. USB10H. USB1T1102 USB1T11A. vKA75420M W005G FQPF*7N65C APPLICATIONS bc548 spice model bf494 spice model spice model bf199 LM3171 MOC3043-M spice model bc547 spice model BC517 spice model BF494 spice SPICE model BC237
2007 - transistor 2N5952

Abstract: transistor KSP44 bc558 zener diode reference guide FYPF2004DN 1n967b schottky KBL BRIDGE RECTIFIER 005 1n5248 bc237 e 420 dual jfet
Text: No file text available


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PDF
2004 - thermistor KSD201

Abstract: IRF power mosfets catalog Complementary MOSFETs buz11 Diode 1N4001 50V 1.0A DO-41 Rectifier Diode BZX85C6V8 SPICE MODEL K*D1691 make SMPS inverter welding machine 1N5402 spice model transistor KSP44 tip122 tip127 mosfet audio amp
Text: No file text available


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PDF
thermistor KSD201

Abstract: pin configuration NPN transistor BC548 pin configuration transistor BC547 smd packaging FQPF*7N65C APPLICATIONS BC547 sot package sot-23 pin configuration pnp smd transistor BC557 DIODE 1N4148 LL-34 pin configuration NPN transistor BC547 BC557 sot-23 BC547 smd
Text: No file text available


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PDF TS-16949 ISO-14001, thermistor KSD201 pin configuration NPN transistor BC548 pin configuration transistor BC547 smd packaging FQPF*7N65C APPLICATIONS BC547 sot package sot-23 pin configuration pnp smd transistor BC557 DIODE 1N4148 LL-34 pin configuration NPN transistor BC547 BC557 sot-23 BC547 smd
2011 - FSQ510 Equivalent

Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
Text: No file text available


Original
PDF GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
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