The Datasheet Archive

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Part Manufacturer Supplier Stock Best Price Price Each Buy Part
MMBT2222LT1 Motorola Semiconductor Products Bristol Electronics 38,830 $0.06 $0.00
MMBT2222LT1 ON Semiconductor Rochester Electronics 35,931 $0.04 $0.03
MMBT2222LT1 Motorola Semiconductor Products Bristol Electronics - -
MMBT2222LT1 Motorola Semiconductor Products Bristol Electronics - -
MMBT2222LT1 ON Semiconductor Bristol Electronics - -
MMBT2222LT1 Motorola Semiconductor Products ComS.I.T. - -
MMBT2222LT1G ON Semiconductor Allied Electronics & Automation 0 $0.04 $0.04
MMBT2222LT1G ON Semiconductor Future Electronics 0 $0.02 $0.01
MMBT2222LT1G ON Semiconductor Future Electronics 105,000 $0.01 $0.01
MMBT2222LT1G ON Semiconductor Avnet 457 $0.07 $0.02
MMBT2222LT1G ON Semiconductor Rochester Electronics 514,800 $0.04 $0.03
MMBT2222LT1G ON Semiconductor Avnet 276,000 $0.02 $0.01
MMBT2222LT1G ON Semiconductor Avnet 0 $0.02 $0.02
MMBT2222LT1G ON Semiconductor Avnet - -
MMBT2222LT1G ON Semiconductor Avnet 0 $0.13 $0.03
MMBT2222LT1G ON Semiconductor Bristol Electronics - -
MMBT2222LT1G ON Semiconductor Farnell element14 15,001 £0.01 £0.01
MMBT2222LT1G ON Semiconductor RS Components 960,000 £0.03 £0.03
MMBT2222LT1G ON Semiconductor Newark element14 39,000 $0.02 $0.02
MMBT2222LT1G ON Semiconductor Chip1Stop 7,941 $0.05 $0.05
MMBT2222LT1G ON Semiconductor element14 Asia-Pacific 30,000 $0.03 $0.01
MMBT2222LT1G ON SEMICONDUCTOR New Advantage Corporation 1,245,000 $0.03 $0.02
MMBT2222LT1G. ON Semiconductor element14 Asia-Pacific 2,724 $0.15 $0.01
MMBT2222LT1G. ON Semiconductor element14 Asia-Pacific 2,724 $0.15 $0.01
MMBT2222LT1G. ON Semiconductor Farnell element14 1 £0.08 £0.02
MMBT2222LT1S Motorola Semiconductor Products Bristol Electronics - -

No Results Found

MMBT2222LT1 datasheet (12)

Part Manufacturer Description Type PDF
MMBT2222LT1 Comchip Technology General Purpose Transistors NPN Silicon Original PDF
MMBT2222LT1 Leshan Radio Company General Purpose Transistors(NPN Silicon) Original PDF
MMBT2222LT1 Motorola General Purpose Transistors NPN Silicon Original PDF
MMBT2222LT1 Motorola GENERAL PURPOSE TRANSISTORS Original PDF
MMBT2222LT1 On Semiconductor General Purpose Transistor NPN Original PDF
MMBT2222LT1 On Semiconductor General Purpose Transistor NPN; Package: SOT-23 (TO-236) 3 LEAD; No of Pins: 3; Container: Tape and Reel; Qty per Container: 3000 Original PDF
MMBT2222LT1 On Semiconductor Small Signal GP NPN Original PDF
MMBT2222LT1 Rectron Semiconductor SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(NPN) Original PDF
MMBT2222LT1/D On Semiconductor Motorola Preferred Device Original PDF
MMBT2222LT1-D On Semiconductor General Purpose Transistors NPN Silicon Original PDF
MMBT2222LT1G On Semiconductor General Purpose Transistors Original PDF
MMBT2222LT1G On Semiconductor General Purpose Transistor NPN; Package: SOT-23 (TO-236) 3 LEAD; No of Pins: 3; Container: Tape and Reel; Qty per Container: 3000 Original PDF

MMBT2222LT1 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2001 - MMBT2222ALT1

Abstract:
Text: MMBT2222LT1 , MMBT2222ALT1 MMBT2222ALT1 is a Preferred Device General Purpose Transistors NPN Silicon http://onsemi.com MAXIMUM RATINGS Rating Collector­Emitter Voltage MMBT2222LT1 MMBT2222ALT1 Collector­Base Voltage MMBT2222LT1 MMBT2222ALT1 Emitter­Base Voltage MMBT2222LT1 MMBT2222ALT1 Collector Current ­ , °C/W °C xxx = Specific Device Code = (M1B = MMBT2222LT1 , = 1P = MMBT2222ALT1) M = Date Code 1. FR , Device MMBT2222LT1 MMBT2222ALT1 MMBT2222LT3 MMBT2222ALT3 Package SOT­23 SOT­23 SOT­23 SOT­23 Shipping


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PDF MMBT2222LT1, MMBT2222ALT1 MMBT2222ALT1 MMBT2222LT1
2004 - 843 SOT-23

Abstract:
Text: Specific Device Code = (M1B = MMBT2222LT1 , = 1P = MMBT2222ALT1) M = Date Code ORDERING INFORMATION Device MMBT2222LT1 MMBT2222LT1G Package SOT-23 SOT-23 (Pb-Free) SOT-23 SOT-23 (Pb-Free) SOT-23 SOT , MMBT2222LT1 , MMBT2222ALT1 MMBT2222ALT1 is a Preferred Device General Purpose Transistors NPN , Denotes a Pb-Free Lead Finish MAXIMUM RATINGS Rating Collector - Emitter Voltage MMBT2222LT1 MMBT2222ALT1 Collector - Base Voltage MMBT2222LT1 MMBT2222ALT1 Emitter - Base Voltage MMBT2222LT1 MMBT2222ALT1


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PDF MMBT2222LT1, MMBT2222ALT1 MMBT2222ALT1 MMBT2222LT1 843 SOT-23 MMBT2222ALT1G
1996 - m1b marking

Abstract:
Text: MOTOROLA Order this document by MMBT2222LT1 /D SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors NPN Silicon MMBT2222LT1 MMBT2222ALT1* COLLECTOR 3 *Motorola Preferred , Ambient Junction and Storage Temperature DEVICE MARKING MMBT2222LT1 = M1B; MMBT2222ALT1 = 1P , Data © Motorola, Inc. 1996 1 MMBT2222LT1 MMBT2222ALT1 ELECTRICAL CHARACTERISTICS (TA = 25 , Motorola Small­Signal Transistors, FETs and Diodes Device Data MMBT2222LT1 MMBT2222ALT1 SWITCHING TIME


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PDF MMBT2222LT1/D MMBT2222LT1 MMBT2222ALT1* 236AB) MMBT2222LT1/D* m1b marking MMBT2222 MMBT2222A 1N914 2222A MOTOROLA MMBT2222ALT1 MMBT2222LT1
2004 - MMBT2222ALT1G

Abstract:
Text: MMBT2222LT1 , MMBT2222ALT1 MMBT2222ALT1 is a Preferred Device General Purpose Transistors NPN , MMBT2222LT1 MMBT2222ALT1 VCEO Collector -Base Voltage MMBT2222LT1 MMBT2222ALT1 VCBO Emitter -Base Voltage MMBT2222LT1 MMBT2222ALT1 VEBO Collector Current - Continuous Value Unit 2 , 25°C xxx = Specific Device Code = (M1B = MMBT2222LT1 , = 1P = MMBT2222ALT1) M = Date Code ORDERING INFORMATION Package Shipping SOT-23 3000/Tape & Reel MMBT2222LT1G SOT-23 (Pb-Free


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PDF MMBT2222LT1, MMBT2222ALT1 MMBT2222ALT1 MMBT2222LT1 MMBT2222LT1/D MMBT2222ALT1G MMBT2222LT1G m1b marking MMBT2222 MMBT2222ALT3 MMBT2222ALT3G MMBT2222LT1 MMBT2222LT3
2007 - MMBT2222ALT1G

Abstract:
Text: MMBT2222LT1 , MMBT2222ALT1 MMBT2222ALT1 is a Preferred Device General Purpose Transistors NPN , RATINGS Rating Symbol Collector-Emitter Voltage Unit VCEO MMBT2222LT1 MMBT2222ALT1 Collector-Base Voltage Value Vdc 30 40 VCBO VEBO MMBT2222LT1 MMBT2222ALT1 Collector Current - Continuous Collector Current - Peak (Note 3) 2 EMITTER Vdc 60 75 MMBT2222LT1 MMBT2222ALT1 , Components Industries, LLC, 2007 July, 2007 - Rev. 7 1 Publication Order Number: MMBT2222LT1 /D


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PDF MMBT2222LT1, MMBT2222ALT1 MMBT2222ALT1 MMBT2222LT1 MMBT2222LT1/D MMBT2222ALT1G 1P SOT-23 MMBT2222LT3 MMBT2222LT1G MMBT2222LT1 1N914 MMBT2222A MMBT2222 MMBT2222LT3G
2003 - MMBT2222ALT1G

Abstract:
Text: MMBT2222LT1 , MMBT2222ALT1 MMBT2222ALT1 is a Preferred Device General Purpose Transistors NPN , MMBT2222LT1 MMBT2222ALT1 VCEO Collector -Base Voltage MMBT2222LT1 MMBT2222ALT1 VCBO Emitter -Base Voltage MMBT2222LT1 MMBT2222ALT1 VEBO Collector Current - Continuous Value Vdc 2 , ) TA = 25°C Derate above 25°C xxx = Specific Device Code = (M1B = MMBT2222LT1 , = 1P = , , Tstg °C -55 to +150 Shipping MMBT2222LT1 SOT-23 3000/Tape & Reel MMBT2222ALT1


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PDF MMBT2222LT1, MMBT2222ALT1 MMBT2222ALT1 MMBT2222LT1 MMBT2222LT1/D MMBT2222ALT1G m1b marking MMBT2222LT1 MMBT2222ALT3G MMBT2222ALT3 MMBT2222A MMBT2222 mmbt222 marking CC SOT-23
1996 - 1N914

Abstract:
Text: MOTOROLA Order this document by MMBT2222LT1 /D SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors NPN Silicon MMBT2222LT1 MMBT2222ALT1* COLLECTOR 3 *Motorola Preferred , Ambient Junction and Storage Temperature DEVICE MARKING MMBT2222LT1 = M1B; MMBT2222ALT1 = 1P , Data © Motorola, Inc. 1996 1 MMBT2222LT1 MMBT2222ALT1 ELECTRICAL CHARACTERISTICS (TA = 25 , Small­Signal Transistors, FETs and Diodes Device Data MMBT2222LT1 MMBT2222ALT1 SWITCHING TIME EQUIVALENT


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PDF MMBT2222LT1/D MMBT2222LT1 MMBT2222ALT1* 236AB) MMBT2222LT1/D* 1N914 1N914 SOT-23 2222A MOTOROLA m1b marking MMBT2222 MMBT2222A MMBT2222ALT1 MMBT2222LT1
2001 - MMBT2222ALT1

Abstract:
Text: MMBT2222LT1 , MMBT2222ALT1 MMBT2222ALT1 is a Preferred Device General Purpose Transistors NPN Silicon http://onsemi.com MAXIMUM RATINGS Rating Symbol Collector­Emitter Voltage MMBT2222LT1 MMBT2222ALT1 VCEO Collector­Base Voltage MMBT2222LT1 MMBT2222ALT1 VCBO Emitter­Base Voltage MMBT2222LT1 MMBT2222ALT1 Value VEBO COLLECTOR 3 Unit Vdc 30 40 1 BASE Vdc 60 75 , . 99.5% alumina. xxx = Specific Device Code = (M1B = MMBT2222LT1 , = 1P = MMBT2222ALT1) M = Date


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PDF MMBT2222LT1, MMBT2222ALT1 MMBT2222ALT1 MMBT2222LT1 r14525 1N914 1n914 sot m1b marking MMBT2222 MMBT2222A MMBT2222ALT3 MMBT2222LT1 MMBT2222LT3
2006 - m1b marking

Abstract:
Text: MMBT2222LT1 , MMBT2222ALT1 MMBT2222ALT1 is a Preferred Device General Purpose Transistors NPN , RATINGS Rating Symbol Collector -Emitter Voltage Unit VCEO MMBT2222LT1 MMBT2222ALT1 Collector -Base Voltage Value Vdc 30 40 VCBO VEBO MMBT2222LT1 MMBT2222ALT1 Collector Current - Continuous 2 EMITTER Vdc 60 75 MMBT2222LT1 MMBT2222ALT1 Emitter -Base Voltage 1 , Order Number: MMBT2222LT1 /D MMBT2222LT1 , MMBT2222ALT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless


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PDF MMBT2222LT1, MMBT2222ALT1 MMBT2222ALT1 MMBT2222LT1 MMBT2222LT1/D m1b marking MMBT2222ALT1G on semiconductor marking code 1P MMBT2222LT3 MMBT2222LT1G MMBT2222LT1 MMBT2222A MMBT2222 1P SOT-23
2001 - 1N914

Abstract:
Text: MMBT2222LT1 , MMBT2222ALT1 MMBT2222ALT1 is a Preferred Device General Purpose Transistors NPN Silicon http://onsemi.com MAXIMUM RATINGS Rating Symbol Collector­Emitter Voltage MMBT2222LT1 MMBT2222ALT1 VCEO Collector­Base Voltage MMBT2222LT1 MMBT2222ALT1 VCBO Emitter­Base Voltage MMBT2222LT1 MMBT2222ALT1 Value VEBO COLLECTOR 3 Unit Vdc 30 40 1 BASE Vdc 60 75 , . 99.5% alumina. xxx = Specific Device Code = (M1B = MMBT2222LT1 , = 1P = MMBT2222ALT1) M = Date


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PDF MMBT2222LT1, MMBT2222ALT1 MMBT2222ALT1 MMBT2222LT1 r14525 1N914 1N914 SOT-23 m1b marking MMBT2222 MMBT2222A MMBT2222ALT3 MMBT2222LT1 MMBT2222LT3
M1B marking

Abstract:
Text: MMBT2222LT1 , MMBT2222ALT1 MMBT2222ALT1 is a Preferred Device General Purpose Transistors NPN , Collector-Emitter Voltage Unit VCEO MMBT2222LT1 MMBT2222ALT1 Collector-Base Voltage Value Vdc 30 40 VCBO VEBO MMBT2222LT1 MMBT2222ALT1 Collector Current - Continuous Collector Current - Peak (Note 3) 2 EMITTER Vdc 60 75 MMBT2222LT1 MMBT2222ALT1 Emitter-Base Voltage 1 , choices for future use and best overall value. 1 MMBT2222LT1 , MMBT2222ALT1 ELECTRICAL


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PDF MMBT2222LT1, MMBT2222ALT1 MMBT2222ALT1 MMBT2222LT1 M1B marking 1N914 SOT-23 MMBT2222A 1n914 sot marking 1p sot23 1P SOT-23 marking code m1b MMBT2222ALT1G 1p sot MMBT2222LT3G
marking QE

Abstract:
Text: MMBT2222LT1 MMBT2222ALT1* 'M otorola Preferred Device MAXIMUM RATINGS Rating Collector-Emitter Voltage , 5 to +150 DEVICE MARKING MMBT2222LT1 = M1B; MMBT2222ALT1 = 1P ELECTRICAL CHARACTERISTICS H a , Small-Signal Transistors, FETs and Diodes Device Data MMBT2222LT1 MMBT2222ALT1 ELECTRICAL CHARACTERISTICS , Transistors, FETs and Diodes Device Data MMBT2222LT1 MMBT2222ALT1 SWITCHING TIME EQUIVALENT TEST CIRCUITS , Motorola Small-Signal Transistors, FETs and Diodes Device Data MMBT2222LT1 MMBT2222ALT1 IQ


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PDF MMBT2222LT1 MMBT2222ALT1* O-236AB) b3tj75SS MMBT2222ALT1 R307b marking QE mmbt2222A MMBT2222ALT1
2001 - 1N914

Abstract:
Text: ON Semiconductort MMBT2222LT1 MMBT2222ALT1* General Purpose Transistors NPN Silicon *ON , ­236) COLLECTOR 3 1 BASE DEVICE MARKING 2 EMITTER MMBT2222LT1 = M1B; MMBT2222ALT1 = 1P ELECTRICAL , March, 2001 ­ Rev. 1 1 Publication Order Number: MMBT2222LT1 /D MMBT2222LT1 MMBT2222ALT1 , 50 mAdc) http://onsemi.com 2 Vdc MMBT2222LT1 MMBT2222ALT1 SMALL­SIGNAL CHARACTERISTICS , to unity. http://onsemi.com 3 ns ns MMBT2222LT1 MMBT2222ALT1 SWITCHING TIME EQUIVALENT


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PDF MMBT2222LT1 MMBT2222ALT1* r14525 MMBT2222LT1/D 1N914 2222a MMBT2222 MMBT2222A MMBT2222ALT1 MMBT2222LT1
2001 - Not Available

Abstract:
Text: General Purpose Transistors NPN Silicon MMBT2222LT1 MMBT2222ALT1 3 COLLECTOR 1 BASE , Junction and Storage Temperature DEVICE MARKING MMBT2222LT1 = M1B; MMBT2222ALT1 = 1P; ELECTRICAL , :(450)-444-4714 www.dblectro.com MMBT2222LT1 MMBT2222ALT1 ELECTRICAL CHARACTERISTICS (T A = 25 , MMBT2222LT1 MMBT2222ALT1 SWITCHING TIME EQUIVALENT TEST CIRCUITS +30 V +30 V 1.0 to 100µs, DUTY CYCLE , www.dblectro.com MMBT2222LT1 MMBT2222ALT1 200 100 70 70 t r @V CC= 30V t d@V EB(off) = 2.0V t d@V


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PDF MMBT2222LT1 MMBT2222ALT1 236AB) De4-4714 MMBT2222LT1
2001 - MMBT2222A

Abstract:
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon MMBT2222LT1 MMBT2222ALT1 , Storage Temperature DEVICE MARKING MMBT2222LT1 = M1B; MMBT2222ALT1 = 1P; ELECTRICAL CHARACTERISTICS , . MMBT2222LT1 MMBT2222ALT1 ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued , unity. O4­2/5 LESHAN RADIO COMPANY, LTD. MMBT2222LT1 MMBT2222ALT1 SWITCHING TIME EQUIVALENT , Saturation Region O4­3/5 LESHAN RADIO COMPANY, LTD. MMBT2222LT1 MMBT2222ALT1 200 100 70


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PDF MMBT2222LT1 MMBT2222ALT1 236AB) MMBT2222LT1 MMBT2222A 2222A MMBT2222ALT1 1N914 m1b marking MMBT2222 transistor 2222a data sheet
2004 - MMBT2222

Abstract:
Text: MMBT2222LT1 / MMBT2222ALT1 NPN Silicon General Purpose Transistor SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 oC) Symbol MMBT2222 MMBT2222A Unit Collector Base Voltage VCBO 60 75 Vdc Collector Emitter Voltage VCEO 30 40 Vdc Emitter Base Voltage , MMBT2222LT1 / MMBT2222ALT1 Characteristics at TA=25 oC Symbol Min. Max. Unit at VCE=10Vdc, IC , =0 Collector Base Breakdown Voltage at IC=10µAdc, IE=0 G S P FORM A IS AVAILABLE MMBT2222LT1


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PDF MMBT2222LT1 MMBT2222ALT1 OT-23 MMBT2222 MMBT2222A R2222A 10Vdc, 20mAdc, 20Vdc, MMBT2222
10VDC

Abstract:
Text: MMBT2222LT1 / MMBT2222ALT1 NPN Silicon General Purpose Transistor SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 oC) Symbol MMBT2222 MMBT2222A Unit Collector Base Voltage VCBO 60 75 Vdc Collector Emitter Voltage VCEO 30 40 Vdc Emitter Base Voltage , the Hong Kong Stock Exchange, Stock Code: 724) Dated : 10/02/2004 MMBT2222LT1 / MMBT2222ALT1 , Code: 724) Dated : 10/02/2004 MMBT2222LT1 / MMBT2222ALT1 Characteristics at TA=25 oC Symbol


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PDF MMBT2222LT1 MMBT2222ALT1 OT-23 MMBT2222 MMBT2222A 20mAdc, 20Vdc, 10Vdc, 10VDC MMBT2222 MMBT2222A MMBT2222ALT1
Not Available

Abstract:
Text: SEMICONDUCTOR MMBT2222LT1 TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(NPN) FEATURES * Power dissipation PCM 0.3 W(Tamb=25OC) * Collector current ICM 0.6 A * Collector-base voltage V(BR)CBO: 60 V * Operating and storage junction temperature range TJ,Tstg , frequency at which |hfe| extrapolates to unity RATING AND CHARACTERISTICS CURVES ( MMBT2222LT1 ) hFE , CHARACTERISTICS CURVES ( MMBT2222LT1 ) 10 RS=OPTIMUM SOURCE RESISTANCE IC=1.0mA,RS=150Ω 500µΑ,RS


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PDF MMBT2222LT1 OT-23 -55OCto 150OC OT-23 MIL-STD-202E
MMBT2222AS

Abstract:
Text: MMBT2222LT1 SOT-23 TRANSISTOR Description SOT-23 Dimensions(Unit:mm) Medium Power Amplifier. NPN Silicon Transistor. 2.3±0.2 2 1.9 Low collector saturation voltage enabling low voltage operation 1 3 0.124±0.10 0.97Ref. Complementary pair with . 0.5Ref. 0.4 Large collector current:I Cmax =600mA 2.9±0.2 1.3±0.2 0.5Ref. Features 0.38Ref. MINO , :// www.wej.cn pF V CB =10V, I E =0 ,f=1MHz E-mail:wej@yongerjia.com MMBT2222LT1 Typical


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PDF MMBT2222LT1 OT-23 OT-23 97Ref. 600mA 38Ref. MMBT2222S MMBT2222AS MMBT2222AS 1p transistor sot23 MMBT2222LT1
2006 - MMBT2222LT1

Abstract:
Text: RECTRON SEMICONDUCTOR MMBT2222LT1 TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(NPN) FEATURES * Power dissipation PCM 0.3 W(Tamb=25OC) * Collector current ICM 0.6 A * Collector-base voltage V(BR)CBO: 60 V * Operating and storage junction temperature range TJ,Tstg , ( MMBT2222LT1 ) hFE,DCCURRENT GAIN 1000 700 500 300 200 100 70 50 30 20 10 01 0.2 0.3 , .Turn-Off Time RECTRON RATING AND CHARACTERISTICS CURVES ( MMBT2222LT1 ) IC=1.0mA,RS=150 500µ,RS


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PDF MMBT2222LT1 OT-23 -55OCto 150OC OT-23 MIL-STD-202E MMBT2222LT1
MMBT2222ALT1

Abstract:
Text: MMBT2222LT1 SOT-23 TRANSISTOR Description SOT-23 Dimensions(Unit:mm) Medium Power Amplifier. NPN Silicon Transistor. 2.3±0.2 2 1.9 Low collector saturation voltage enabling low voltage operation 1 3 0.38Ref. MINO.1 h FE RANK HA Type Name 0.124±0.10 0.97Ref. Complementary pair with . 0.5Ref. 0.4 Large collector current:I Cmax =600mA 1.3±0.2 2.9±0.2 0.5Ref. Features 0.01-0.10 Tolerance:0.1mm 1.EMITTER 2.BASE 3.COLLECTOR Absolute Maximum


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PDF MMBT2222LT1 OT-23 OT-23 38Ref. 97Ref. 600mA MMBT2222S MMBT2222AS MMBT2222ALT1 MMBT2222LT1
2002 - Not Available

Abstract:
Text: LX1990ILM ON SEMI MMBT2222LT1 or equivalent Chicago Miniature Lamp CMD333UGC or equivalent Chicago , 10K JB8 PW M TP10 R4 100K Q1 MMBT2222LT1 GND Figure 2 – Schematic LX190 USER


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PDF LX1990 CMD383UGC CMD333UBC MMBT2222LT1 LX190
2004 - Not Available

Abstract:
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT2222LT1 SOT-23 TRANSISTOR (NPN) 1. BASE 2. EMITTER FEATURES 3. COLLECTOR W (Tamb=25℃) 2. 4 1. 3 0. 95 0. 4 2. 9 Collector current 0.6 A ICM: Collector-base voltage 60 V V(BR)CBO: Operating and storage junction temperature range 0. 95 0.3 1. 9 PCM: 1. 0 Power dissipation Unit: mm TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb


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PDF OT-23 MMBT2222LT1 OT-23 150mA 500mA 500mA, 100MHz
2002 - BAT54S KL4

Abstract:
Text: C44 1.0 nF R14 25 k R9 12.7 k C10 1.0 nF Q10 MMBT2222LT1 TP20 ENABLE R17 20 k , 800­463­9275 13 1 Q10 NPN MMBT2222LT1 Newark 14 1 R7 res, 56.2 k, 0805 ­


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PDF CS5332DEMO/D CS5332 CS5332 r14525 BAT54S KL4 liteon 1325 16SP270M atx 300 power supply schematic BAT54S Diode marking 27C MMBT2097LT1 sanyo c35
BT2222A

Abstract:
Text: M AXIMUM RATINGS Rating C o lle c to r -E m itte r V o lta g e C o lle c to r-B a s e V o lta g e E m itte r-B a s e V o lta g e C o lle c to r C u rre n t - C o n tin u o u s Symbol V CEO v CBO v EBO M MBT2222 30 60 5.0 MMBT2222A 40 75 6.0 600 Unit Vdc V dc Vdc m Adc MMBT2222LT1 MMBT2222ALT1* CASE 318-07, STYLE 6 SOT-23 (TO-236AB) > C THERMAL CHARACTERISTICS Characteristic T o ta , 2-156 MMBT2222LT1 , ALTI ELECTRICAL CHARACTERISTICS (c o n tin u e d ) IT /\ = 2 5 'C u n le s s o


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PDF MBT2222 MMBT2222A MMBT2222LT1 MMBT2222ALT1* OT-23 O-236AB) MBT2222A BT2222A MMBT2222ALT1 1P BT2222
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