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Motorola Semiconductor Products
MMBR901LT1 MMBR901LT1 ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Bristol Electronics (2) MMBR901LT1 3,503 - - - - - More Info
MMBR901LT1 2,840 11 - - $0.3169 $0.156 $0.1268 More Info

MMBR901 datasheet (8)

Part ECAD Model Manufacturer Description Type PDF
MMBR901 MMBR901 ECAD Model Micro Commercial Components High-Frequency Transistor NPN Silicon Original PDF
MMBR901 MMBR901 ECAD Model Motorola European Master Selection Guide 1986 Scan PDF
MMBR901 MMBR901 ECAD Model Others Shortform Transistor PDF Datasheet Scan PDF
MMBR901 MMBR901 ECAD Model Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
MMBR901 MMBR901 ECAD Model Others Semiconductor Master Cross Reference Guide Scan PDF
MMBR901LT1 MMBR901LT1 ECAD Model Motorola IC = 30 mA SURFACE MOUNTED HIGH-FREQUENCY TRANSISTOR NPN SILICON Original PDF
MMBR901LT3 MMBR901LT3 ECAD Model Motorola IC = 30 mA SURFACE MOUNTED HIGH-FREQUENCY TRANSISTOR NPN SILICON Original PDF
MMBR901MLT1 MMBR901MLT1 ECAD Model Advanced Power Technology RF & MICROWAVE TRANSISTOR Original PDF

MMBR901 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
MMBR901

Abstract: transistor 2248
Text: 1EE 0 § k 3 ti7 2 5 4 MOTOROLA SC MOTOROLA Dä7E7(3 T | X S TR S /R F SEMICONDUCTOR TECHNICAL DATA MMBR901 Dfe Source Same as MRF9Q1 The RF Line NPN Silicon High Frequency Transistors , . . designee) primarily for use in high-gain, iow-noise, small-signal UHF and microwave amplifiers constructed with thick and thin-film circuits using sur face mount components. · High Power Gain , -23 DEVICE M AR KIN G MMBR901 = 7A ELECTRICAL CHARACTERISTICS ITa = 25°C unless otherwise noted


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PDF MMBR901 MMBR901 transistor 2248
MMBR901

Abstract: No abstract text available
Text: MCC Micro Commercial Corp. 21201 Itasca St. Chatsworth, CA 91311 Phone: (818) 701-4933 Fax: (818) 701-4939 MMBR901 Description · · · · · NPN Silicon High-Frequency Transistor High Current-Gain ­ Bandwidth Products Low Noise Figure @ f=1.0GHz ­ NF(matched)=1.9dB (Typ) High Power Gain ­ Gpe(matched)=12.0dB (Typ) @ f=1.0GHz Operating & Storage Temperature: -55°C to +150°C Marking Code: 7A MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage V


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PDF MMBR901 10Vdc, MMBR901
1998 - MMBR901

Abstract: 418 MHz SAW AM RF Transmitter RF Transistor Selection MMBR-901 AN33-A-061198 RF PCB Antenna MMBTh 100 MMBTH17LT1 RC oscillator design "am transmitter application
Text: 300 ~ 418 MHz Transmitter Design Notes For either application, RFM recommends surface mount components and a careful RF PCB layout to ensure highest output power and best harmonic suppression. Best achievable performance occurs when the ground of the SAW device, C2 and C3, are physically close, preferably a single point on the PCB. Transistor selection may be the BFS-17A, MMBR-901 , MMBTH-10LT1, MMBTH , PCB layout are required for best results. The Motorola MMBR901 or similar is suggested for the NPN


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PDF BFS-17A, MMBR-901, MMBTH-10LT1, MMBTH-17LT1 AN33-A-061198 MMBR901 418 MHz SAW AM RF Transmitter RF Transistor Selection MMBR-901 AN33-A-061198 RF PCB Antenna MMBTh 100 MMBTH17LT1 RC oscillator design "am transmitter application
2001 - Not Available

Abstract: No abstract text available
Text: MCC Description · · · · · omponents 20736 Marilla Street Chatsworth !"# $ % !"# MMBR901 High Current-Gain ­ Bandwidth Products Low Noise Figure @ f=1.0GHz ­ NF(matched)=1.9dB (Typ) High Power Gain ­ Gpe(matched)=12.0dB (Typ) @ f=1.0GHz Operating & Storage Temperature: -55°C to +150°C Marking Code: 7A NPN Silicon High-Frequency Transistor Unit Vdc Vdc Vdc mAdc o MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current -


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PDF MMBR901 10Vdc,
Not Available

Abstract: No abstract text available
Text: MMBR901 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V(BR)CEO (V)15 V(BR)CBO (V)25 I(C) Max. (A)30m Absolute Max. Power Diss. (W)350m Minimum Operating Temp (øC)-55 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)50n @V(CBO) (V) (Test Condition)15 h(FE) Max. Current gain.200 @I(C) (A) (Test Condition)5.0m @V(CE) (V) (Test Condition)5.0 f(T) Min. (Hz) Transition Freq4.0G @I(C) (A) (Test Condition) @V(CE) (V) (Test Condition) Power Gain Min. (dB) @I(C) (A) (Test


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PDF MMBR901
"SAW 315" MHZ PCB

Abstract: 433.92 transmitter, pcb layout MMBR901 433.92 SAW RESONATOR MMBR-901 433.92 MHz transmitter schematic mmbth10lt1 NE68030 RO2104A 3v battery rf transmitter
Text: Transistor: MMBR-901 , NE68030 etc. C1: 1 ­ 2.2 pF C2: 5.1 ­ 8.2 pF C3: 220pF L1: 3.9 ­ 6.8 nH R1: Adjust


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PDF RO2104A, 470pF RO2164A, RO2144A, MMBR-901, NE68030 220pF "SAW 315" MHZ PCB 433.92 transmitter, pcb layout MMBR901 433.92 SAW RESONATOR MMBR-901 433.92 MHz transmitter schematic mmbth10lt1 RO2104A 3v battery rf transmitter
MMBR2857

Abstract: MMBR2060 MMBR2857 MOTOROLA MMBF4860 MMBR5031 MMBFU310 MMBR931 MMBR930 MMBR5179 BFS17 E1
Text: 6.0 11.0 5.0 6.0 450 MMBR920 7B 5.0 14 10 2.4 2.0 10 17 14 10 1000 MMBR901 7A 4.0 15 10 2.3 5.0 6.0


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PDF OT-23 MMBR930 BFR92 BFR92A BFR93 BFR93A MMBR931 MMBR2060 MMBR5179 MMBR920 MMBR2857 MMBR2857 MOTOROLA MMBF4860 MMBR5031 MMBFU310 BFS17 E1
2001 - MMBR901

Abstract: No abstract text available
Text: Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 MMBR901 Description · · · · · NPN Silicon High-Frequency Transistor High Current-Gain ­ Bandwidth Products Low Noise Figure @ f=1.0GHz ­ NF(matched)=1.9dB (Typ) High Power Gain ­ Gpe(matched)=12.0dB (Typ) @ f=1.0GHz Operating & Storage Temperature: -55°C to +150°C Marking Code: 7A MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage V CEO 15 Vdc


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PDF MMBR901 10Vdc, MMBR901
Not Available

Abstract: No abstract text available
Text: MCC omponents 21201 Itasca Street Chatsworth !"# $ % !"# MMBR901 Description · · · · · NPN Silicon High-Frequency Transistor High Current-Gain ­ Bandwidth Products Low Noise Figure @ f=1.0GHz ­ NF(matched)=1.9dB (Typ) High Power Gain ­ Gpe(matched)=12.0dB (Typ) @ f=1.0GHz Operating & Storage Temperature: -55°C to +150°C Marking Code: 7A MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage V CEO 15 Vdc Collector-Base Voltage V CBO


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PDF MMBR901 10Vdc,
2001 - Not Available

Abstract: No abstract text available
Text: MCC Micro Commercial Components TM omponents 20736 Marilla Street Chatsworth !"# $ % !"# MMBR901 · · · · · · Description High Current-Gain ­ Bandwidth Products Low Noise Figure @ f=1.0GHz ­ NF(matched)=1.9dB (Typ) High Power Gain ­ Gpe(matched)=12.0dB (Typ) @ f=1.0GHz Operating & Storage Temperature: -55°C to +150°C Marking Code: 7A Case Material:Molded Plastic. UL Flammability Classificatio Rating 94-0 and MSL Rating 1 Rating Collector-Emitter Voltage Collector-Base


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PDF MMBR901
2011 - 2SC288a

Abstract: 40518 S763T TP393 TP390 MMBR2857 BF378 2N5652 25M SOT89 JE90181
Text: TP393 2N5761 2N5761 MMBR901 MPS901 BFR92 MMBR920 BFR93A BFR93A BFR93A LBFR90 LBFR96 LHBFR96 BFR92A BFR90


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MPS901

Abstract: ic hp 2212 TRANSISTOR SF 128 LB 122 transistor To-92 MMBR901 mrf901 MRF9011LT1 SF-11N SF-31N MARKING H3B
Text: ) ( MMBR901LT1 , T3) • High Power Gain — Gpe(matched) = 13.5 dB (Typ) @ f = 1.0 GHz (MRF9011LT1) = 12.0 dB (Typ) @ f = 1.0 GHz ( MMBR901LT1 , T3) • Guaranteed RF Parameters (MRF9011LT1) • Surface Mounted , Dissipation @ Tq = 75°C (1) MMBR901LT1 , T3; MRF9011LT1 Derate above 25°C pD(max) 0.300 4.00 Watt mW/°C , MRF9011LT1, MMBR901LT1 , T3 Rejc 200 250 -CAN DEVICE MARKING MRF9011LT1 =01 MMBR901LT1 , T3 = 7A NOTE: 1 , , STYLE 6 SOT-23 LOW PROFILE, MMBR901LT1 , T3 CASE 29-04, STYLE 2 TO-226AA (TO-92) MPS901 CASE 317-01


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PDF MRF9011LT1) MMBR901LT1, OT-23 OT-143 MRF901 MPS901 ic hp 2212 TRANSISTOR SF 128 LB 122 transistor To-92 MMBR901 MRF9011LT1 SF-11N SF-31N MARKING H3B
MPS901

Abstract: TDB O 117 SP BR901 MMBR901LT1 RF901 MMBR901
Text: , V c e = 10 V MMBR901LT1. T3 MPS901 MRF901 MRF9011LT1 2-216 MOTOROLA RF DEVICE DATA MRF901 , Product Low Noise Figure @ f = 1.0 GHz - NF(matched) = 1.8 dB (Typ) (MRF9011LT1) = 1.9 dB (Typ) ( MMBR901 , ) @ f = 1.0 GHz ( MMBR901LT1 , T3) Guaranteed RF Parameters (MRF9011LT1) Surface Mounted S O T -2 3 & S , packaging options: T1 suffix = 3,000 units per reel T3 suffix = 10,000 units per reel MMBR901LT1 , T3 , d jacent to body of package. REV 7 MOTOROLA RF DEVICE DATA MMBR901LT1 , T3 MPS901 MRF901


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PDF MRF9011LT1) MMBR901 MMBR901LT1, MRF901 MPS901 MRF9011LT1 TDB O 117 SP BR901 MMBR901LT1 RF901
2003 - 2SC1815 NPN SOT-23

Abstract: ss8050 sot-23 2N2907 SOT-23 BC337 S8050 npn 2SC1008 noise S9012 BC212C S9014 To39 S9014 SOT-23
Text: 2SC3052 KTC3875S KTC4075 MMBR901 150 150 100 300 200 -5.0 -10 20 15 10 10 3.0 -Audio -Audio 1kHz


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PDF 2N3416 2N3904 2N3906 2N4400 2N4402 2N4401 2N4403 2N5172 2N6727 2SA562 2SC1815 NPN SOT-23 ss8050 sot-23 2N2907 SOT-23 BC337 S8050 npn 2SC1008 noise S9012 BC212C S9014 To39 S9014 SOT-23
variable inductor

Abstract: TOKO 7mc8128z TOKO rlc variable INDUCTANCE overtone butler oscillator SAW oscillator 1030 MPS901 292SNS-T1373 SFE10.7MHY v18-o NAD 751
Text: power transistor in a TO-92 plastic package; also MMBR901 is available in a SOT-23 surface mount package


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PDF MC13156/D MC13156 variable inductor TOKO 7mc8128z TOKO rlc variable INDUCTANCE overtone butler oscillator SAW oscillator 1030 MPS901 292SNS-T1373 SFE10.7MHY v18-o NAD 751
variable inductor

Abstract: TOKO rlc variable INDUCTANCE 292SNS-T1373 RPM-950 c series transistor equivalent table T1373 MC13156 dw FM
Text: a TO -92 plastic package; also MMBR901 is available in a SOT-23 surface mount package). With the 50


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PDF MC13156 MC13156 MC13156DW variable inductor TOKO rlc variable INDUCTANCE 292SNS-T1373 RPM-950 c series transistor equivalent table T1373 MC13156 dw FM
MC13156 VHF

Abstract: overtone butler oscillator ab potentiometer type ej variable inductor TOKO rlc variable INDUCTANCE sfe10.7mhy MC13156 MC13156 FM Nippon capacitors SFE10
Text: power transistor in a TO-92 plastic package; also MMBR901 is available in a SOT-23 surface mount package


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PDF MC13156/D MC13156 MC13156 VHF overtone butler oscillator ab potentiometer type ej variable inductor TOKO rlc variable INDUCTANCE sfe10.7mhy MC13156 FM Nippon capacitors SFE10
Bandpass Ceramic Filters

Abstract: variable inductor TOKO 455KHz transformer Murata SF 455 D toko 455khz if transformer circuit schematic for ev 100 m mixer 44.545 MHZ crystal vhf gmsk receiver MC13156FB Nippon capacitors
Text: recover greater than 10 kHz ASK dat% power transistor in a TO-92 plastic package; also MMBR901 .$%~~kwh a


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PDF MC13156rn MC13156 MC131 MK145BP, PHX33541-I Bandpass Ceramic Filters variable inductor TOKO 455KHz transformer Murata SF 455 D toko 455khz if transformer circuit schematic for ev 100 m mixer 44.545 MHZ crystal vhf gmsk receiver MC13156FB Nippon capacitors
2003 - 1.5Ke240

Abstract: MBR1620CT MBR5045PT MBR5020 BC337 MP106 RL253GP SRA505 S9012 M5819
Text: 93 93 96 93 93 93 93 93 93 93 94 94 95 93 93 95 96 93 93 93 93 93 94 95 95 93 93 PART NUMBER MMBR901


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PDF 5KE10 5KE100 5KE11 5KE110 5KE12 5KE120 5KE13 5KE130 5KE15 5KE150 1.5Ke240 MBR1620CT MBR5045PT MBR5020 BC337 MP106 RL253GP SRA505 S9012 M5819
diagram transistor tt 2206

Abstract: equivalent for transistor tt 2206 transistor tt 2206 equivalent transistor TT 2206 lm 2206 for frequency modulation overtone butler oscillator TT 2206 transistor variable inductor M1203-A murata crystal filter AM 455
Text: using an MPS901 (RF low power transistor in a TO -92 plastic package; also MMBR901 is available in a SOT


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PDF MC13156 MC13156DW 13156DW diagram transistor tt 2206 equivalent for transistor tt 2206 transistor tt 2206 equivalent transistor TT 2206 lm 2206 for frequency modulation overtone butler oscillator TT 2206 transistor variable inductor M1203-A murata crystal filter AM 455
1998 - MPS901

Abstract: TOKO CERAMIC FILTER 455 455 khz if transformer 292SNS-T1373 44.545 MHz MC13156DW carrier detect phase shift 455 ceramic filter IF transformers 10.7 mhz J380
Text: in a TO­92 plastic package; also MMBR901 is available in a SOT­23 surface mount package). With the


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PDF MC13156/D MC13156 MPS901 TOKO CERAMIC FILTER 455 455 khz if transformer 292SNS-T1373 44.545 MHz MC13156DW carrier detect phase shift 455 ceramic filter IF transformers 10.7 mhz J380
1998 - Wavetek 395

Abstract: MPS901 TOKO CERAMIC FILTER 455 Wavetek 164 44.545 crystal 455 khz if transformer TOKO 7mc8128z carrier detect phase shift J380 44.545 MHz
Text: in a TO­92 plastic package; also MMBR901 is be achieved. The circuit used is the application circuit


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PDF MC13156/D MC13156 MC13156 Wavetek 395 MPS901 TOKO CERAMIC FILTER 455 Wavetek 164 44.545 crystal 455 khz if transformer TOKO 7mc8128z carrier detect phase shift J380 44.545 MHz
1996 - MPS901

Abstract: TOKO CERAMIC FILTER 455 J380 carrier detect phase shift toko transformer IF 455 khz TOKO 7mc8128z Nippon capacitors Wavetek 395 murata transformer IF 455 khz J340
Text: package; also MMBR901 is available in a SOT­23 surface mount package). With the 50 k 10 turn


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PDF MC13156/D MC13156 MC13156 MC13156/D* MPS901 TOKO CERAMIC FILTER 455 J380 carrier detect phase shift toko transformer IF 455 khz TOKO 7mc8128z Nippon capacitors Wavetek 395 murata transformer IF 455 khz J340
1998 - variable inductor

Abstract: HP8640B TOKO CERAMIC FILTER 455 MPS901 IF transformers 10.7 mhz TOKO 7mc8128z J380 Wavetek 395 TOKO rlc variable INDUCTANCE MC13156DW
Text: in a TO­92 plastic package; also MMBR901 is available in a SOT­23 surface mount package). With the


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PDF MC13156/D MC13156 15JAN02 27DEC02 variable inductor HP8640B TOKO CERAMIC FILTER 455 MPS901 IF transformers 10.7 mhz TOKO 7mc8128z J380 Wavetek 395 TOKO rlc variable INDUCTANCE MC13156DW
1998 - TOKO rlc variable INDUCTANCE

Abstract: MPS901 29 wavetek HP8640B SFE10 MMBR5179 MC13156FB MC13156DW MC13156 751E
Text: using an MPS901 (RF low power transistor in a TO­92 plastic package; also MMBR901 is available in a


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PDF MC13156/D MC13156 MC13156 TOKO rlc variable INDUCTANCE MPS901 29 wavetek HP8640B SFE10 MMBR5179 MC13156FB MC13156DW 751E
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