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ON Semiconductor
MMBF5457 MOSFET, N-CH, 0.1A, SOT-23; Breakdown Voltage Vbr:-25V; Zero Gate Voltage Drain Current Idss Min:1mA; Zero Gate Voltage Drain Current Idss Max:5mA; Gate-Source Cutoff Voltage Vgs(off) Max:-6V; Transistor Type:JFET; No. of Pins:3 Pin RoHS Compliant: Yes MMBF5457 ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Newark element14 (2) MMBF5457 Cut Tape 0 5 $0.396 $0.303 $0.177 $0.141 $0.141 More Info
MMBF5457 Reel 0 3,000 $0.131 $0.131 $0.131 $0.131 $0.109 More Info
element14 Asia-Pacific (2) MMBF5457 0 1 $0.219 $0.219 $0.219 $0.219 $0.219 More Info
MMBF5457 68 1 $0.219 $0.219 $0.219 $0.219 $0.219 More Info
Farnell element14 (2) MMBF5457 0 5 - £0.243 £0.119 £0.0749 £0.0697 More Info
MMBF5457 0 5 - £0.243 £0.119 £0.0749 £0.0697 More Info
ON Semiconductor
MMBF5457LT1 MMBF5457LT1 ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Bristol Electronics (2) MMBF5457LT1 2,046 - - - - - More Info
MMBF5457LT1 3,908 - - - - - More Info
Chip 1 Exchange MMBF5457LT1 6,955 - - - - - More Info
Motorola Semiconductor Products
MMBF5457LT1 MMBF5457LT1 ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Bristol Electronics MMBF5457LT1 2,566 - - - - - More Info
Others
MMBF5457LTA
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Chip 1 Exchange MMBF5457LTA 2,964 - - - - - More Info
Others
MMBF5457LT
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Chip 1 Exchange MMBF5457LT 1,346 - - - - - More Info

MMBF5457 datasheet (20)

Part ECAD Model Manufacturer Description Type PDF
MMBF5457 MMBF5457 ECAD Model Fairchild Semiconductor N-Channel General Purpose Amplifier Original PDF
MMBF5457 MMBF5457 ECAD Model Fairchild Semiconductor N-Channel General Purpose Amplifier Original PDF
MMBF5457 MMBF5457 ECAD Model Fairchild Semiconductor N-Channel General Purpose Amplifier Original PDF
MMBF5457 MMBF5457 ECAD Model Fairchild Semiconductor N-Channel General Purpose Amplifier Scan PDF
MMBF5457 MMBF5457 ECAD Model Motorola N-channel JFET general purpose transistor. Scan PDF
MMBF-5457 MMBF-5457 ECAD Model Motorola European Master Selection Guide 1986 Scan PDF
MMBF5457 MMBF5457 ECAD Model Others Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan PDF
MMBF5457 MMBF5457 ECAD Model Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
MMBF5457 MMBF5457 ECAD Model National Semiconductor N-Channel General Purpose Amplifiers Scan PDF
MMBF5457 MMBF5457 ECAD Model National Semiconductor JFET General Purpose Scan PDF
MMBF5457 MMBF5457 ECAD Model National Semiconductor N-Channel General Purpose Amplifier Scan PDF
MMBF5457L MMBF5457L ECAD Model On Semiconductor Small Signal JFET Original PDF
MMBF5457LT1 MMBF5457LT1 ECAD Model Motorola JFET - General Purpose Transistor Original PDF
MMBF5457LT1 MMBF5457LT1 ECAD Model On Semiconductor JFET - General Purpose Transistor N-Channel Original PDF
MMBF5457LT1 MMBF5457LT1 ECAD Model On Semiconductor JFET General Purpose Transistor Original PDF
MMBF5457LT1 MMBF5457LT1 ECAD Model Others Shortform Datasheet & Cross References Data Scan PDF
MMBF5457LT1/D MMBF5457LT1/D ECAD Model On Semiconductor SEMICONDUCTOR TECHNICAL DATA Original PDF
MMBF5457LT1-D MMBF5457LT1-D ECAD Model On Semiconductor JFET - General Purpose Transistor N-Channel Original PDF
MMBF5457LT1G MMBF5457LT1G ECAD Model On Semiconductor Small Signal SOT23 JFET N Channel 25V Tape and Reel Original PDF
MMBF5457_NL MMBF5457_NL ECAD Model Fairchild Semiconductor N-Channel General Purpose Amplifier Original PDF

MMBF5457 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2N5458 NATIONAL SEMICONDUCTOR

Abstract: 2N5457 2N5459 2n5458
Text: 2N5457 I 2N5458 I 2N5459 I MMBF5457 I MMBF5458 / MMBF5459 e? National Semiconductor Discrete POWER & Signal Technologies 2N5457 2N5458 2N5459 MMBF5457 MMBF5458 MMBF5459 SOT-23 Mark , Ambient 2N5457 625 5.0 83.3 200 Max » MMBF5457 350 2.8 357 Units mW mW/"C °C/W °C/W *Device , / MMBF5457 / MMBF5458 / MMBF5459 N-Channel General Purpose Amplifier (continued) Electrical , / 2N5459 / MMBF5457 / MMBF5458 / MMBF5459 N-Channel General Purpose Amplifier (continued) Typical


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PDF 2N5457 2N5458 2N5459 MMBF5457 MMBF5458 MMBF5459 2N5459 2N5458 NATIONAL SEMICONDUCTOR
2N5457

Abstract: No abstract text available
Text: M lC O N D U C T O R tm MMBF5457 MMBF5458 MMBF5459 2N5457 2N5458 2N5459 * TO , TA = 25°C unless otherwise noted Max Characteristic Units 2N5457 * MMBF5457 625 , orporation 2N5457 / 2N5458 / 2N5459 / MMBF5457 / MMBF5458 / MMBF5459 Discrete POWER & Signal , / MMBF5457 / MMBF5458 / MMBF5459 N-Channel General Purpose Amplifier (continued) Typical , / 2N5459 / MMBF5457 / MMBF5458 / MMBF5459 N-Channel General Purpose Amplifier 2N5457 / 2N5458


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PDF MMBF5457 MMBF5458 MMBF5459 2N5457 2N5458 2N5459 OT-23 deviBF5459 2N5457 2N5458
2002 - 5458

Abstract: TA 5458 fairchild 2n5458
Text: Max * MMBF5457-5459 350 2.8 556 Units mW mW/°C °C/W °C/W *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." ã1997 Fairchild Semiconductor Corporation 5-43 2N5457 / 5458 / 5459 / MMBF5457 , 2N5457 / 5458 / 5459 / MMBF5457 / 5458 / 5459 2N5457 2N5458 2N5459 MMBF5457 MMBF5458 MMBF5459 , Transfer Characteristics 5-44 2N5457 / 5458 / 5459 / MMBF5457 / 5458 / 5459 N-Channel General , Current Transconductance vs. Drain Current 5-45 2N5457 / 5458 / 5459 / MMBF5457 / 5458 / 5459


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PDF 2N5457 MMBF5457 2N5458 2N5459 MMBF5458 MMBF5459 OT-23 5458 TA 5458 fairchild 2n5458
1997 - TA 5458

Abstract: 5458 2N5457-5459 MMBF5458 MMBF5457 2N5459 2N5458 2N5457 equivalent 2N5459 5458 transistor
Text: Fairchild Semiconductor Corporation Max Units 2N5457-5459 625 5.0 125 * MMBF5457-5459 350 2.8 357 556 mW mW/°C °C/W °C/W 2N5457 / 5458 / 5459 / MMBF5457 / 5458 / 5459 MMBF5457 MMBF5458 MMBF5459 2N5457 2N5458 2N5459 (continued) Electrical Characteristics , kHz, RG = 1.0 megohm, BW = 1.0 Hz 3.0 2N5457 / 5458 / 5459 / MMBF5457 / 5458 / 5459 , Transconductance vs. Drain Current 2N5457 / 5458 / 5459 / MMBF5457 / 5458 / 5459 N-Channel General Purpose


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PDF OT-23 TA 5458 5458 2N5457-5459 MMBF5458 MMBF5457 2N5459 2N5458 2N5457 equivalent 2N5459 5458 transistor
1998 - 2N5457

Abstract: 2N5458 2N5459 2N5458 equivalent 2N5457 datasheet transistor 2N5457 2N5459 common drain fairchild 2n5458 equivalent 2N5459 MMBF5457
Text: MMBF5457 MMBF5458 MMBF5459 2N5457 2N5458 2N5459 G D G S TO-92 S SOT , * MMBF5457 350 2.8 200 357 mW mW/°C °C/W °C/W 2N5457 / 2N5458 / 2N5459 / MMBF5457 / MMBF5458 , Characteristics 2N5457 / 2N5458 / 2N5459 / MMBF5457 / MMBF5458 / MMBF5459 N-Channel General Purpose , Transconductance vs. Drain Current 2N5457 / 2N5458 / 2N5459 / MMBF5457 / MMBF5458 / MMBF5459 N-Channel , . Voltage 2N5457 / 2N5458 / 2N5459 / MMBF5457 / MMBF5458 / MMBF5459 N-Channel General Purpose


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PDF MMBF5457 MMBF5458 MMBF5459 2N5457 2N5458 2N5459 OT-23 2N5457 2N5458 2N5459 2N5458 equivalent 2N5457 datasheet transistor 2N5457 2N5459 common drain fairchild 2n5458 equivalent 2N5459 MMBF5457
1997 - transistor 5457

Abstract: transistor 2N5457 5458 transistor 2N5457 TA 5458 2N5458 5458 2N5459 common drain CBVK741B019 MMBF5459
Text: Fairchild Semiconductor Corporation Max Units 2N5457-5459 625 5.0 125 * MMBF5457-5459 350 2.8 357 556 mW mW/°C °C/W °C/W 2N5457 / 5458 / 5459 / MMBF5457 / 5458 / 5459 MMBF5457 MMBF5458 MMBF5459 2N5457 2N5458 2N5459 (continued) Electrical Characteristics , kHz, RG = 1.0 megohm, BW = 1.0 Hz 3.0 2N5457 / 5458 / 5459 / MMBF5457 / 5458 / 5459 , Transconductance vs. Drain Current 2N5457 / 5458 / 5459 / MMBF5457 / 5458 / 5459 N-Channel General Purpose


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PDF OT-23 transistor 5457 transistor 2N5457 5458 transistor 2N5457 TA 5458 2N5458 5458 2N5459 common drain CBVK741B019 MMBF5459
2N5459

Abstract: 2N5457
Text: 2N5457 / 2N5458 / 2N5459 / MMBF5457 / MMBF5458 / MMBF5459 FAIRCHILD S E M I C O N D U C T O R tm D iscrete POWER & S ign al Technologies 2N5457 2N5458 2N5459 MMBF5457 MMBF5458 MMBF5459 , Resistance, Junction to Ambient 625 5.0 83.3 200 Max * MMBF5457 350 2.8 357 Units mW mW /°C °C/W °C/W , 2N5457 / 2N5458 / 2N5459 / MMBF5457 / MMBF5458 / MMBF5459 N-Channel General Purpose Amplifier , / 2N5459 / MMBF5457 / MMBF5458 / MMBF5459 N-Channel General Purpose Amplifier (continued) Typical


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PDF 2N5457 2N5458 2N5459 MMBF5457 MMBF5458 MMBF5459 2N5459
1997 - 5459

Abstract: No abstract text available
Text: * MMBF5457-5459 350 2.8 357 556 mW mW/°C °C/W °C/W 2N5457 / 5458 / 5459 / MMBF5457 / 5458 / 5459 MMBF5457 MMBF5458 MMBF5459 2N5457 2N5458 2N5459 (continued) Electrical , / MMBF5457 / 5458 / 5459 N-Channel General Purpose Amplifier dB gfs 1000 1500 2000 5 , Parameter Interaction Transconductance vs. Drain Current 2N5457 / 5458 / 5459 / MMBF5457 / 5458 , Capacitance vs. Voltage 2N5457 / 5458 / 5459 / MMBF5457 / 5458 / 5459 N-Channel General Purpose


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PDF OT-23 5459
transistor 6D sot23

Abstract: No abstract text available
Text: Storage Temperature MMBF5457 CASE 318-02/03, STYLE 10 SOT-23 (TO-236AA/AB) Symbol PD Max 225 1.8 , MMBF5457 » 6D JFET GENERAL PURPOSE TRANSISTOR N-CHANNEL ELECTRICAL CHARACTERISTICS (Ta - 25°C unless


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PDF b3k7254 MMBF5457 OT-23 O-236AA/AB) transistor 6D sot23
1997 - 2n5457

Abstract: 5457 MARK 61S
Text: Max * MMBF5457-5459 350 2.8 556 Units mW mW/°C °C/W °C/W *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." 1997 Fairchild Semiconductor Corporation 2N5457 / 5458 / 5459 / MMBF5457 / 5458 , 2N5457 / 5458 / 5459 / MMBF5457 / 5458 / 5459 2N5457 2N5458 2N5459 MMBF5457 MMBF5458 MMBF5459 , Characteristics Transfer Characteristics 2N5457 / 5458 / 5459 / MMBF5457 / 5458 / 5459 N-Channel General , Current Transconductance vs. Drain Current 2N5457 / 5458 / 5459 / MMBF5457 / 5458 / 5459


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PDF 2N5457 MMBF5457 2N5458 2N5459 MMBF5458 MMBF5459 OT-23 5457 MARK 61S
1997 - 5458 transistor

Abstract: transistor 5457 transistor 2N5457 2N5457 5458 transistor mark igf transistor 2N5458 MMBF5459 CBVK741B019 2N5459
Text: Fairchild Semiconductor Corporation Max Units 2N5457-5459 625 5.0 125 * MMBF5457-5459 350 2.8 357 556 mW mW/°C °C/W °C/W 2N5457 / 5458 / 5459 / MMBF5457 / 5458 / 5459 MMBF5457 MMBF5458 MMBF5459 2N5457 2N5458 2N5459 (continued) Electrical Characteristics , kHz, RG = 1.0 megohm, BW = 1.0 Hz 3.0 2N5457 / 5458 / 5459 / MMBF5457 / 5458 / 5459 , Transconductance vs. Drain Current 2N5457 / 5458 / 5459 / MMBF5457 / 5458 / 5459 N-Channel General Purpose


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PDF OT-23 5458 transistor transistor 5457 transistor 2N5457 2N5457 5458 transistor mark igf transistor 2N5458 MMBF5459 CBVK741B019 2N5459
transistor 2N5457

Abstract: 2n5457 2N5459 jfet transistor 2N545B transistor jfet 2N5457 2N5458 NATIONAL SEMICONDUCTOR transistor 2N5458 2n5458 MMBF5459
Text: 2N5457/ MMBF5457 /2N5458/MMBF5458/2N5459/MMBF5459 National Semiconductor 2N5457 2N5458 2N5459 MMBF5457 MMBF5458 MMBF5459 TO -9 2 T L /G /1 0 1 0 0 -6 T L /G /1 0 1 0 0 -2 N-Channel JFET Transistor Electrical Characteristics T a Symbol OFF CHARACTERISTICS V(BR)GSS Igss Gate-Source Breakdown Voltage (Iq = - 10 (¿Adc, V q s = 0) Gate Reverse Current (VGS = - 15 Vdc, V qs = 0) (Vgs = - 1 5 Vdc, Vqs , / MMBF5457 /2N5458/MMBF5458/2N5459/MMBF5459 N-Channel JFET Transistor Electrical Characteristics T a


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PDF /MMBF5457/2N5458/MMBF5458/2N5459/MMBF5459 2N5457 2N5458 2N5459 MMBF5457 MMBF5458 MMBF5459 2N5459 transistor 2N5457 jfet transistor 2N545B transistor jfet 2N5457 2N5458 NATIONAL SEMICONDUCTOR transistor 2N5458 MMBF5459
2002 - J201 N-channel JFET

Abstract: MMBFJ202 BF244 MMBF4091 MMBFJ211 p-channel jfet rf 4392 J309-J310 5486 J309
Text: / 5459 / MMBF5457 / 5458 / 5459 N-Channel GPA . 5-43 2N5460 / 5461 / 5462


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PDF JFTJ105 MMBFJ108 MMBFJ111 MMBFJ112 MMBFJ113 MMBFJ175 MMBFJ201 MMBFJ202 MMBFJ211 MMBFJ212 J201 N-channel JFET BF244 MMBF4091 p-channel jfet rf 4392 J309-J310 5486 J309
MMBFJ202

Abstract: MMBF4119 MMBFJ201 MMBFJ210 MMBF5459 MMBF5458 MMBF5457 MMBF5103 MMBF4118 62w sot-23
Text: 0.2 15 1.2 2.7 15 1 10 40 15 7.5 15 t12 15 0 t4 15 51 MMBF5457 (6D) TO-236 (49) 25 10 1 15 0.5 6 15


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PDF sot-23 MMBF4117 O-236 MMBF4118 MMBF4119 MMBF5103 MMBF5458 MMBFJ202 MMBF4119 MMBFJ201 MMBFJ210 MMBF5459 MMBF5458 MMBF5457 MMBF5103 MMBF4118 62w sot-23
2n5458

Abstract: 2N545 2N5457 2N5459 MMBF5457 MMBF5459
Text: Discrete POWER & Signal PAIRCHILD Technologies SEMICONDUCTOR ™ 2N5457 MMBF5457 2N545Ô MMBF545Ô 2N5459 MMBF5459 SOT-23 S Mark: 6D/61S/6L N-Channel General Purpose Amplifier This device is a low level audio amplifier and switching transistors, and can be used for analog switching applications. Sourced from Process 55. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol , Units 2N5457 * MMBF5457 Pd Total Device Dissipation Derate above 25°C 625 5.0 350 2.8 mW mW/°C


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PDF 2N5457 MMBF5457 2N545Ã MMBF545Ã 2N5459 MMBF5459 OT-23 6D/61S/6L 100mV- 2n5458 2N545 MMBF5457 MMBF5459
2010 - E110 FET

Abstract: TIS58 fet MOTOROLA J210 TIS58 JF1033B J300 Siliconix ta82 JF1033S InterFET 16M SOT-23
Text: TMPF5668 TP5668 TP5668 MMBF5457 MMBF5457 MPF103 SMP5457 2~;5;:){ BFR31 2N5668 MMBF5484 MMBF5484 SMP5484


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PDF MPF109W BFT46 MPF109R JF1033B MPF109N J204-18 MPF256 SMP5668 E110 FET TIS58 fet MOTOROLA J210 TIS58 J300 Siliconix ta82 JF1033S InterFET 16M SOT-23
Not Available

Abstract: No abstract text available
Text: MMBF5457 Transistors N-Channel JFET Military/High-RelN V(BR)DSS (V)25 V(BR)GSS (V)25 I(D) Max. (A) I(G) Max. (A) Absolute Max. Power Diss. (W)225m Maximum Operating Temp (øC)150õ I(GSS) Max. (A)1.0n @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A) V(GS)off Max. (V)6.0 @Vgs (test) (V)0 @V(DS) (V) (Test Condition) @I(D) (A) (Test Condition) I(DSS) Min. (A)5.0m I(DSS) Max. (A) @V(DS) (V) (Test Condition) r(DS)on Max. (Ohms) g(fs) Min. (S) Trans. conduct.1.0m g(fs) Max


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PDF MMBF5457
MMBR2857

Abstract: MMBR2060 MMBR2857 MOTOROLA MMBF4860 MMBR5031 MMBFU310 MMBR931 MMBR930 MMBR5179 BFS17 E1
Text: (mA) Max (mA) MMBF-5457 6D -25 1.0 5.0 15 1.0 5.0 BFR30 M1 -25 1.0 4.0 10 4.0 10 BFR31 M2 -25


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PDF OT-23 MMBR930 BFR92 BFR92A BFR93 BFR93A MMBR931 MMBR2060 MMBR5179 MMBR920 MMBR2857 MMBR2857 MOTOROLA MMBF4860 MMBR5031 MMBFU310 BFS17 E1
2N5458 NATIONAL SEMICONDUCTOR

Abstract: to236 2n4338 MMBFJ201 MMBFJ202 2N4340 BF245C JFET 2N3822 2N3686 2N3684 BF256C
Text: 10 2 5 7 3 T0-92(92) MMBF5457 25 0.5 6 15 10 2 5 7 3 TO-236* 2N5458 25 1 7 15 10 1.5 5.5 7 3


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PDF b501130 003THTfl 2N3684 2N3686 2N3822 PN4303 2N4338 T0-18 2N4339 2N5458 NATIONAL SEMICONDUCTOR to236 2n4338 MMBFJ201 MMBFJ202 2N4340 BF245C JFET BF256C
MMBF4119

Abstract: MMBFJ201
Text: 15 0 t4 15 51 MMBF5457 (6D) TO-236 (49) 25 10 1 15 0.5 6 15


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PDF OT-23 O-236 MMBF4118 MMBFJ202 MMBFJ210 MMBFJ211 MMBF4119 MMBFJ201
MMBF310

Abstract: bfj113 NPDS PN5434 BF244A MMBF4119 MMBFJ201
Text: Fairchild Semiconductor [¡ ¡ g ^ g p0Wgr an(J 3¡qna| TeChnOlOQÌeS Selection Guides Surface Mount SOT-23, Through-Hole TO-92 and Dual SOB JFETs V GS (off) Part Number S0T-23/T0-92 N-Channel MMBFJ201/J201 MMBF4117/PN4117 MMBF4119/PN4119 MMBF4392/PN4392 M M B F J 1 11/J111 MM BFJ113/J113 BF244A BF244C MMBF5457 /2N5457 MMBF5459/2N5459 MMBF5485/2N5485 MMBF210/J210 MMBF212/J212 MMBF310/J310 J105 J107 J106 J110 PN5434 0.3/1.5 0.6/1.8 2/6 2/5 3/10 0.5/3.0 0.4/2.2 3 2/7.5 0.5/6 2/8 0.5/4 1/3 4/6 2.0/6.5


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PDF OT-23, S0T-23/T0-92 MMBFJ201/J201 MMBF4117/PN4117 MMBF4119/PN4119 MMBF4392/PN4392 11/J111 BFJ113/J113 BF244A BF244C MMBF310 bfj113 NPDS PN5434 MMBF4119 MMBFJ201
yg sot23

Abstract: 82007 MMBF5484 marking GIF MARKING YG SOT23 C96d MMBF5460 MMBF5459 MMBF5457 25CC
Text: and Storage Temperature Tj. Tgtg 150 °C MMBF5457 = 6D 96D 82007 D T- 2.j-z-r' MMBF5457 CASE


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PDF b3b7254 fl2D07 yg sot23 82007 MMBF5484 marking GIF MARKING YG SOT23 C96d MMBF5460 MMBF5459 MMBF5457 25CC
N5458

Abstract: N5457 2NS457 2N5458 MMBF5459 MMBF5458 MMBF5457 2N5459 2N5457 2N5459 common drain
Text:  Nation a I Semiconductor" 2 N5457 2 N5458 2N5459 Discrete POWER & Signal Technologies MMBF5457 MMBF5458 MMBF5459 SOT-23 S Mark: 6D/61S/6L N-Channel General Purpose Amplifier This device is a low level audio amplifier and switching transistors, and can be used for analog switching applications. Sourced from Process 55. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units Vdg Drain-Gate Voltage 25 V Vgs Gate-Source Voltage -25 V Igf Forward Gate Current


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PDF N5457 N5458 2N5459 MMBF5457 MMBF5458 MMBF5459 OT-23 6D/61S/6L VM-15V) OT-23 2NS457 2N5458 MMBF5459 2N5459 2N5457 2N5459 common drain
2012 - FGPF4633

Abstract: fgpf50n33 FGH40N60SFD FGA25N120 FGH60N60 fga70n33 fgd4536 FGH40N60 FGH60N60SFD fgh80n60
Text: . N-Channel 512-MMBF5484 512-MMBF5485 512-MMBF5486 512- MMBF5457 512-MMBF5458 * 512-MPF102D74Z 512


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PDF O-220F 512-FGPF4633TU 512-FGD4536TM 512-HGTP7N60B3D O-252 512-HGT1S20N60C3S9A 512-FGP20N60UFDTU 512-FGAF40N60UFDTU FGPF4633 fgpf50n33 FGH40N60SFD FGA25N120 FGH60N60 fga70n33 fgd4536 FGH40N60 FGH60N60SFD fgh80n60
2002 - 2N5459

Abstract: 2N5485 mpf102 mpf102 equivalent KSK161 J201 N-channel JFET J113 equivalent J107 diode transistor j210 application note jfet J111 transistor MMBFJ177
Text: 7 20 15 6 - 12 - - MMBF5457 25 350 0.5 - 6 0.01 15 1


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PDF OT-223 JFTJ105 KSK211 KSK595 MMBF5484 MMBF5485 P1086 2N5460 2N5461 2N5462 2N5459 2N5485 mpf102 mpf102 equivalent KSK161 J201 N-channel JFET J113 equivalent J107 diode transistor j210 application note jfet J111 transistor MMBFJ177
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