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MJE350 equivalent Datasheets Context Search

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2011 - mje350

Abstract:
Text: MJE340 MJE350 Complementary silicon power transistors Features I STMicroelectronics , PNP type is MJE350 . Figure 1. Internal schematic diagram ฀ Table 1. Device summary , MJE350 MJE350 PNP SOT-32 Tube November 2011 Doc ID 4171 Rev 6 1/8 www.st.com 8 Electrical ratings 1 MJE340, MJE350 Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter MJE340 (NPN) Unit MJE350 (PNP) VCBO Collector-base voltage (IE = 0


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PDF MJE340 MJE350 OT-32 MJE340 OT-32. MJE350. mje350
2003 - mje350

Abstract:
Text: ® MJE340 MJE350 COMPLEMETARY SILICON POWER TRANSISTORS s s STMicroelectronics , power linear and switching applications. It is mounted in SOT-32. The complementary PNP type is MJE350 , ) Collector Current Total Power Dissipation at T case 25 C o Value MJE340 MJE350 300 3 0.5 20.8 -65 to , For PNP types voltage and current values are negative. April 2003 1/5 MJE340 / MJE350 , % Safe Operating Area Derating Curve 2/5 MJE340 / MJE350 DC Current Gain (NPN type) DC Current


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PDF MJE340 MJE350 OT-32. MJE350. OT-32 MJE350 MJE340-MJE350 MJE-340 mje340 transistor mje350 transistor SOT32
2011 - mje340

Abstract:
Text: MJE340 MJE350 Complementary silicon power transistors Features STMicroelectronics preferred , switching applications. It is mounted in SOT-32. The complementary PNP type is MJE350 . Figure 1. SOT , MJE350 Polarity NPN PNP Package SOT-32 SOT-32 Packaging Tube Tube Order code MJE340 MJE350 November 2011 Doc ID 4171 Rev 6 1/8 www.st.com 8 Electrical ratings MJE340, MJE350 1 Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter MJE340 (NPN) MJE350 (PNP) VCBO


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PDF MJE340 MJE350 OT-32. MJE350. OT-32 MJE350 OT-32 MJE340-MJE350 MJE350 b c e
1997 - MJE340 datasheet

Abstract:
Text: MJE340 MJE350 COMPLEMETARY SILICON POWER TRANSISTORS s s SGS-THOMSON PREFERRED SALESTYPES , switching applications.It is mounted in SOT-32. The complementary PNP type is MJE350 . 3 2 1 , ) Un it NPN V CEO Valu e MJE350 Un it 300 V 3 V Collector Current 0.5 , types voltage and current values are negative. June 1997 1/5 MJE340 / MJE350 THERMAL DATA R , Derating Curve 30 V 240 MJE340 / MJE350 DC Current Gain (NPN type) DC Current Gain (PNP


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PDF MJE340 MJE350 MJE340 OT-32. MJE350. OT-32 MJE340 datasheet MJE350 mje340 transistor mje350 transistor MJE340-MJE350 MJE340 b c e mje340 equivalent MJE350 b c e
1997 - mje350 transistor

Abstract:
Text: MJE340 MJE350 COMPLEMETARY SILICON POWER TRANSISTORS s s SGS-THOMSON PREFERRED SALESTYPES , switching applications.It is mounted in SOT-32. The complementary PNP type is MJE350 . 3 2 1 , PNP Collector-Emitter Voltage (I B = 0) Unit NPN V CEO Value MJE350 Unit 300 V , and current values are negative. June 1997 1/5 MJE340 / MJE350 THERMAL DATA R thj-case , 240 MJE340 / MJE350 DC Current Gain (NPN type) DC Current Gain (PNP type) Collector Emitter


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PDF MJE340 MJE350 MJE340 OT-32. MJE350. OT-32 mje350 transistor MJE-340
2001 - MJE350

Abstract:
Text: ON Semiconductort MJE350 Plastic Medium Power PNP Silicon Transistor . . . designed for use , ) © Semiconductor Components Industries, LLC, 2001 June, 2001 ­ Rev. 11 1 Publication Order Number: MJE350 /D MJE350 hFE , DC CURRENT GAIN 100 1.0 TJ = 150°C TJ = 25°C 0.8 25°C V , http://onsemi.com 2 140 160 MJE350 PACKAGE DIMENSIONS TO­225 CASE 77­09 ISSUE W ­B­ U , 0.64 0.88 3.69 3.93 1.02 - MJE350 ON Semiconductor and are trademarks of Semiconductor


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PDF MJE350 r14525 MJE350/D MJE350
2003 - MJE340

Abstract:
Text: MJE340 MJE350 ® COMPLEMETARY SILICON POWER TRANSISTORS s s STMicroelectronics , MJE350 . 3 2 1 SOT-32 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol , Collector Current Max Operating Junction Temperature MJE350 300 T stg Tj MJE340 PNP V CEO , values are negative. April 2003 1/5 MJE340 / MJE350 THERMAL DATA R thj-case Thermal , / MJE350 DC Current Gain (NPN type) DC Current Gain (PNP type) Collector-Emitter Saturation Voltage


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PDF MJE340 MJE350 MJE340 OT-32. MJE350. OT-32 MJE350 mje350 transistor mje340 transistor MJE340 datasheet transistor mje340 MJE-340 MJE340 b c e MJE350 b c e TRANSISTOR MJE350
2006 - J350G

Abstract:
Text: MJE350 Plastic Medium Power PNP Silicon Transistor This device is designed for use in , ) hFE 30 240 ORDERING INFORMATION Device MJE350 MJE350G Package Shipping TO , 1 Publication Order Number: MJE350 /D MJE350 hFE , DC CURRENT GAIN 100 1.0 TJ = , , CASE TEMPERATURE (°C) Figure 5. Power Derating http://onsemi.com 2 140 160 MJE350 , Representative. MJE350 /D ON Semiconductor


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PDF MJE350 O-225 MJE350/D J350G j350g transistor j350 TRANSISTOR MJE350G J350 MJE350 TO-225
2001 - mje350

Abstract:
Text: MJE350 MJE350 High Voltage General Purpose Applications · High Collector-Emitter Breakdown , Fairchild Semiconductor Corporation Rev. A1, February 2001 MJE350 Typical Characteristics VBE , ©2001 Fairchild Semiconductor Corporation Rev. A1, February 2001 MJE350 Package Demensions , Product Folder - Fairchild P/N MJE350 - PNP Epitaxial Silicon Transistor SEARCH | Parametric | Cross , MJE350 Products groups PNP Epitaxial Silicon Transistor Analog and Mixed Signal Datasheet Contents


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PDF MJE350 MJE340 O-126 MJE340 MJE350STU O-126 mje350 mje350 transistor
2002 - MJE350

Abstract:
Text: ON Semiconductor ) MJE350 Plastic Medium Power PNP Silicon Transistor . . . designed for , , 2002 April, 2002 ­ Rev. 12 1 Publication Order Number: MJE350 /D MJE350 hFE , DC , 140 160 MJE350 PACKAGE DIMENSIONS TO­225 CASE 77­09 ISSUE W ­B­ U F Q ­A­ , _ TYP 3.76 4.01 1.15 1.65 0.64 0.88 3.69 3.93 1.02 - MJE350 ON Semiconductor and , USA/Canada http://onsemi.com 4 MJE350 /D ON Semiconductor


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PDF MJE350 r14525 MJE350/D MJE350
1995 - mje350 transistor

Abstract:
Text: regulators requiring PNP capability. Plastic Medium Power PNP Silicon Transistor MJE350 SEMICONDUCTOR TECHNICAL DATA Order this document by MJE350 /D MOTOROLA MJE350 hFE , DC CURRENT GAIN , /IB = 5.0 Motorola Bipolar Power Transistor Device Data 160 MJE350 PACKAGE DIMENSIONS , ISSUE V Motorola Bipolar Power Transistor Device Data 3 MJE350 Motorola reserves the right , , N.T., Hong Kong. 852­26629298 4 Motorola Bipolar Power Transistor Device Data * MJE350 /D


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PDF MJE350/D* MJE350/D mje350 transistor Motorola bipolar transistor MJE350 MJE350 PIN
1995 - MJE350

Abstract:
Text: regulators requiring PNP capability. Plastic Medium Power PNP Silicon Transistor MJE350 SEMICONDUCTOR TECHNICAL DATA Order this document by MJE350 /D MOTOROLA MJE350 hFE , DC CURRENT GAIN , /IB = 5.0 Motorola Bipolar Power Transistor Device Data 160 MJE350 PACKAGE DIMENSIONS , ISSUE V Motorola Bipolar Power Transistor Device Data 3 MJE350 Motorola reserves the right , , N.T., Hong Kong. 852­26629298 4 Motorola Bipolar Power Transistor Device Data * MJE350 /D


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PDF MJE350/D* MJE350/D MJE350 MJE350 PIN MJE350-D motorola mje350 pnp mje350 TRANSISTOR MJE350
2007 - Not Available

Abstract:
Text: MJE350 Plastic Medium Power PNP Silicon Transistor This device is designed for use in , INFORMATION Device MJE350 MJE350G Package Shipping TO−225 500 Units/Box TOâ , Order Number: MJE350 /D MJE350 hFE , DC CURRENT GAIN 100 1.0 TJ = 150°C TJ = 25 , 140 160 MJE350 PACKAGE DIMENSIONS TO−225 CASE 77−09 ISSUE Z −B− U F NOTES , ://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative MJE350 /D


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PDF MJE350 MJE350/D
2007 - JE350

Abstract:
Text: MJE350 Plastic Medium Power PNP Silicon Transistor This device is designed for use in , mAdc, VCE = 10 Vdc) hFE 30 240 - ORDERING INFORMATION Device MJE350 MJE350G , January, 2007 - Rev. 14 1 Publication Order Number: MJE350 /D MJE350 hFE , DC CURRENT GAIN , Derating http://onsemi.com 2 140 160 MJE350 PACKAGE DIMENSIONS TO-225 CASE 77-09 ISSUE Z , ://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative MJE350 /D


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PDF MJE350 MJE350/D JE350 je350g je350 transistor MJE350G je-350 MJE350 MJE350 PIN to225
2000 - mje350

Abstract:
Text: MJE350 MJE350 High Voltage General Purpose Applications · High Collector-Emitter Breakdown Voltage · Suitable for Transformer · Complement to MJE340 1 TO-126 1 . Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted , ©2000 Fairchild Semiconductor International Rev. A, February 2000 MJE350 Typical Characteristics ©2000 Fairchild Semiconductor International Rev. A, February 2000 MJE350 Package


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PDF MJE350 MJE340 O-126 mje350
2013 - JE350

Abstract:
Text: MJE350 Plastic Medium-Power PNP Silicon Transistor This device is designed for use in line−operated applications such as low power, line−operated series pass and switching regulators requiring , Publication Order Number: MJE350 /D MJE350 100 1.0 TJ = 150°C TJ = 25°C 0.8 25°C V , TEMPERATURE (°C) Figure 5. Power Derating http://onsemi.com 2 140 160 MJE350 PACKAGE , ://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative MJE350 /D


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PDF MJE350 MJE340 MJE350/D JE350
2004 - 8805 VOLTAGE REGULATOR

Abstract:
Text: MJE350 Medium Power PNP Transistors Features: · PNP Plastic Medium Power Silicon Transistor. · Designed for use Line-Operated Applications Such as Low Power, Line Operated Series Pass and Switching , . Collector 3. Base Page 1 31/05/05 V1.0 MJE350 Medium Power PNP Transistors Absolute Maximum , ) Package Type Part Number 0.5 300 30 20 TO-126 PNP MJE350 Page 2 31/05/05 V1.0 MJE350 Medium Power PNP Transistors Notes: International Sales Offices: AUSTRALIA ­


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PDF MJE350 O-126 8805 VOLTAGE REGULATOR MJE350 MJE350 b c e pnp mje350
2001 - MJE350

Abstract:
Text: MJE350 MJE350 High Voltage General Purpose Applications · High Collector-Emitter Breakdown Voltage · Suitable for Transformer · Complement to MJE340 TO-126 1 1. Emitter 2.Collector 3.Base .PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise , Rev. A1, February 2001 MJE350 1000 hFE, DC CURRENT GAIN VCE = 10V 100 10 VBE(sat , [ C], CASE TEMPERATURE Figure 4. Power Derating Rev. A1, February 2001 MJE350 Package


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PDF MJE350 MJE340 O-126 MJE350 MJE340
2008 - MJE350

Abstract:
Text: MJE350 Medium Power PNP Transistors Features: · PNP Plastic Medium Power Silicon Transistor. · Designed for use Line-Operated Applications Such as Low Power, Line Operated Series Pass and Switching , . Base Page 1 10/05/08 V1.1 MJE350 Medium Power PNP Transistors Absolute Maximum Ratings , ) Package Type Part Number 0.5 300 30 20 TO-126 PNP MJE350 Page 2 10/05/08 V1.1 MJE350 Medium Power PNP Transistors Notes: International Sales Offices: AUSTRALIA ­


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PDF MJE350 O-126 MJE350 MJE350 b c e Power Transistors TO-126 Case
1998 - DK53

Abstract:
Text: BD242B MJ2955 BDW52C BD238 MJE350 TIP30A TIP30A TIP30A BD238 MJ2955 MJE172 MJE172 BD238 , BD438 BD440 BD442 MJE350 BDW52C BDW52C TIP32C TIP30C TIP30C MJE350 MJE350 BDW52C TIP32C BDW52C BD438 BD438 BD242B MJE350 MJE350 MJE210 MJ2955 BD238 MJE350 MJE172 TIP32A BDW52C TIP32C TIP42C TIP42A TIP32A BDX88C BDX88C MJ2955 TIP42C MJE350 TIP42C 2N6490 Industry , BD244B TIP32A BD244B TIP32A TIP32A BDW52C MJ2955 TIP42A TIP42A 2N5195 2N5195 MJE350 MJE350


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PDF 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 DK53 dk52 2SC4977 MJE102 BD699 2SA1046 BU808DFI equivalent 2n3055 replacement BUL128 MJ2955 replacement
1997 - DK53

Abstract:
Text: MJ2955 BDW52C BD238 MJE350 TIP30A TIP30A TIP30A 2N4920 MJ2955 MJE172 MJE172 BD238 BD242B BD242B BDW52C MJ2955 MJ2955 BD242A BD242B 2N6107 2N6107 TIP30C BD438 BD440 BD442 MJE350 , PREFERRED TIP30C MJE350 MJE350 BDW52C TIP32C BDW52C BD438 BD438 BD242B MJE350 MJE350 MJE210 MJ2955 2N4920 MJE350 MJE172 TIP32A BDW52C TIP32C TIP42C TIP42A TIP32A BDX88C BDX88C MJ2955 TIP42B MJE350 TIP42B 2N6490 BD912 TIP42B BD244B BD244B MJ2955 BD242A BD244B TIP32A BD244B


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PDF 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 DK53 dk52 BU724AS mje2055 2n3055 replacement BUX98PI BD263 BD699 BD292 2N5037
2002 - MJE350

Abstract:
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP EPITAXIAL SILICON POWER TRANSISTOR MJE350 TO126 Plastic Package EC B Designed for use in Line-Operated Applications sush as Low Power, Line- Operated Series Pass and Switching Regulators ABSOLUTE , MJE350 TO126 Plastic Package TO-126 (SOT-32) Plastic Package A C DIM 10.5 10.8 2.4 , kgs Data Sheet Page 2 of 3 Notes MJE350 TO126 Plastic Package Disclaimer The


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PDF MJE350 C-120 MJE350Rev 221102E MJE350 transistor mje350 MJE350 b c e
MJE350

Abstract:
Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company PNP EPITAXIAL SILICON POWER TRANSISTOR MJE350 TO126 Plastic Package EC B Designed for use in Line-Operated Applications sush as Low Power, Line- Operated Series Pass and Switching Regulators ABSOLUTE MAXIMUM RATINGS , Continental Device India Limited IC=50mA, VCE=10V Data Sheet 30 240 Page 1 of 3 MJE350 , kgs Data Sheet Page 2 of 3 Notes MJE350 TO126 Plastic Package Disclaimer The


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PDF ISO/TS16949 MJE350 C-120 MJE350Rev 221102E MJE350
la 4142

Abstract:
Text: MJE350 ABSOLUTE MAXIMUM RATINGS (Ta=25°C) T- JJ-o TO-128 Characteristic Symbol Rating Unit , | ?1t,4142 0007705 1 j MJE350 PNP EPITAXIAL SILICON TRANSISTOR HIGH COLLECTOR-EMITtER SUSTAINING , SAMSUNG SEMICONDUCTOR INC MJE350 me D | 7^4142 ooa?a3 3 | PNP EPITAXIAL SILICON TRANSISTOR -:—^r


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PDF MJE210 65MHz -100mA MJE200 Vce--10V, MJE350 r-33-fl la 4142 MJE340 300V transistor pnp 2a 3V to 300V transformer MJE200 MJE350
d 331 TRANSISTOR equivalent

Abstract:
Text: ¡ S A M S U N G S E 1ME 0 C 7Ol J b N| t lD0l 0i 7f CD S T O f l R 4 I c 0U70 MJE340 NPN EPITAXIAL SILICON TRANSISTOR HIGH COLLECTOR-EMITT&R SUSTAINING VOLTAGE HIGH VOLTAGE GENERAL PURPOSE APPLICATIONS SUITABLE FOR TRANSFORMER Complementary to MJE350 ABSOLUTE MAXIMUM RATINGS (Ta= 25°C ) Characteristic Collector-Base Voltage Collectof-Emitter Voltage Emitter-Base Voltage , equivalent to styles A,B,C;D of reel pack depending on which box-flat is opened and which end of the box the


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PDF MJE340 MJE350 0QG77fe d 331 TRANSISTOR equivalent mje340 equivalent transistor B A O 331
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