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Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
MJD31CITU ON Semiconductor 3.0 A, 100 V NPN Bipolar Power Transistor, 5040-TUBE
MJD31CQ-13 Diodes Incorporated Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic/Epoxy, 2 Pin, DPAK-3/2
MJD31C-13 Diodes Incorporated Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin, DPAK-3
NJVMJD31CT4G-VF01 ON Semiconductor 3.0 A, 100 V NPN Bipolar Power Transistor, 2500-REEL
GTCL030-32-31P Amphenol Industrial Operations GT 31C 31#16 PIN RECP
2DA-31PA156F172 ITT Interconnect Solutions MICRO DD 31C PIN JACKS

MJD31/31C Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2010 - tip31c fairchild

Abstract:
Text: MJD31/ 31C NPN Epitaxial Silicon Transistor Features · · · · · General Purpose Amplifier , Current Gain Bandwidth Product * Pulse Test: PW300s, Duty Cycle2% MJD31/ 31C Rev. A3 Min. 20 20 1 A A mA 25 10 3 50 1.2 1.8 V V MHz www.fairchildsemi.com 1 MJD31/ 31C , Corporation MJD31/ 31C Rev. A3 1 MJD31C 1 IC(max) MJD31 tSTG s 0 10 s 0 50 IC[A , 2 MJD31/ 31C - NPN Epitaxial Silicon Transistor Typical Performance Characteristics MJD31


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PDF MJD31/31C TIP31 TIP31C MJD31 tip31c fairchild IPAK MJD31 MJD31C TIP31C transistor 31C
2001 - Not Available

Abstract:
Text: MJD31/ 31C MJD31/ 31C General Purpose Amplifier Low Speed Switching Applications · Load Formed , Cycle2% ©2001 Fairchild Semiconductor Corporation Rev. A2, June 2001 MJD31/ 31C Typical , Figure 5. Turn Off Time Figure 6. Safe Operating ©2001 Fairchild Semiconductor Corporation 31C 31 Rev. A2, June 2001 MJD31/ 31C Typical Characteristics (Continued) 20 PC[W], POWER , Figure 7. Power Derating ©2001 Fairchild Semiconductor Corporation Rev. A2, June 2001 MJD31/ 31C


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PDF MJD31/31C TIP31 TIP31C MJD31 MJD31C MJDH31 O-251 O-252
2012 - Not Available

Abstract:
Text: MJD31/ 31C NPN Epitaxial Silicon Transistor Features • • • • • General Purpose , © 2012 Fairchild Semiconductor Corporation MJD31/ 31C Rev. A4 Remarks www.fairchildsemi.com 1 MJD31/ 31C — NPN Epitaxial Silicon Transistor February 2012 Ta = 25°C unless otherwise , MJD31/ 31C Rev. A4 www.fairchildsemi.com 2 MJD31/ 31C — NPN Epitaxial Silicon Transistor , / 31C Rev. A4 1 MJD31C 1 IC(max) MJD31 tSTG s 0μ 10 s 0μ 50 IC[A


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PDF MJD31/31C TIP31 TIP31C MJD31 MJD31C
2012 - Not Available

Abstract:
Text: MJD31/ 31C - NPN Epitaxial Silicon Transistor February 2012 MJD31/ 31C NPN Epitaxial Silicon , Fairchild Semiconductor Corporation MJD31/ 31C Rev. A4 1 www.fairchildsemi.com MJD31/ 31C - NPN , % © 2012 Fairchild Semiconductor Corporation MJD31/ 31C Rev. A4 2 www.fairchildsemi.com MJD31/ 31C - , Operating © 2012 Fairchild Semiconductor Corporation MJD31/ 31C Rev. A4 3 MJD31 MJD31C www.fairchildsemi.com MJD31/ 31C - NPN Epitaxial Silicon Transistor Typical Performance Characteristics


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PDF MJD31/31C TIP31 TIP31C MJD31 MJD31C
2000 - MJD31

Abstract:
Text: MJD31/ 31C MJD31/ 31C General Purpose Amplifier Low Speed Switching Applications · Load Formed for Surface Mount Application (No Suffix) · Straight Lead (I.ACK, "- I" Suffix) · Electrically Similar , Cycle2% ©2000 Fairchild Semiconductor International Rev. A. February 2000 MJD31/ 31C Typical Characteristics ©2000 Fairchild Semiconductor International Rev. A. February 2000 MJD31/ 31C Typical Characteristics (continued) ©2000 Fairchild Semiconductor International Rev. A. February 2000 MJD31/ 31C


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PDF MJD31/31C TIP31 TIP31C MJD31 MJD31C MJD31
2001 - MJD31

Abstract:
Text: MJD31/ 31C MJD31/ 31C General Purpose Amplifier Low Speed Switching Applications · Load Formed , . A2, June 2001 MJD31/ 31C VBE(sat), VCE(sat)[V], SATURATION VOLTAGE Typical Characteristics , 0.01 s 31C 0.1 31 0.1 0µ IC[A], COLLECTOR CURRENT 10 tF , VCC(off)=10V 1 , . A2, June 2001 MJD31/ 31C Typical Characteristics (Continued) PC[W], POWER DISSIPATION 20 , Figure 7. Power Derating ©2001 Fairchild Semiconductor Corporation Rev. A2, June 2001 MJD31/ 31C


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PDF MJD31/31C TIP31 TIP31C MJD31 MJD31C MJDH31 MJD31 MJD31C TIP31C
2001 - MJD31

Abstract:
Text: MJD31/ 31C MJD31/ 31C General Purpose Amplifier Low Speed Switching Applications · Load Formed , . A1, February 2001 MJD31/ 31C VBE(sat), VCE(sat)[V], SATURATION VOLTAGE Typical , 0.01 s 31C 0.1 31 0.1 0µ IC[A], COLLECTOR CURRENT 10 tF , VCC(off)=10V 1 , . A1, February 2001 MJD31/ 31C Typical Characteristics (Continued) PC[W], POWER DISSIPATION , MJD31/ 31C Package Demensions D-PAK 2.30 ±0.10 MIN0.55 0.91 ±0.10 9.50 ±0.30 0.50


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PDF MJD31/31C TIP31 TIP31C MJD31 MJD31C MJDH31 MJD31 MJD31C TIP31C tip31c application
2001 - marking MJD

Abstract:
Text: MJD31/ 31C MJD31/ 31C General Purpose Amplifier Low Speed Switching Applications · Load Formed , Cycle2% ©2001 Fairchild Semiconductor Corporation Rev. A2, June 2001 MJD31/ 31C Typical , Figure 5. Turn Off Time Figure 6. Safe Operating ©2001 Fairchild Semiconductor Corporation 31C 31 Rev. A2, June 2001 MJD31/ 31C Typical Characteristics (Continued) 20 PC[W], POWER , Figure 7. Power Derating ©2001 Fairchild Semiconductor Corporation Rev. A2, June 2001 MJD31/ 31C


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PDF MJD31/31C TIP31 TIP31C MJD31 MJD31C MJDH31 O-251 marking MJD NPN transistor tip31c
QS 100 NPN Transistor

Abstract:
Text: MJD31/ 31C NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE AMPLIFIER LOW SPEED SWITCHING APPLICATIONS DPAK FOR SURFACE MOUNT APPLICATIONS • Load Formed for Surface Mount Application (No Suffix) • Straight Lead (LACK,"- I" Suffix) • Electrically Similar to Popular TIP31 andTIP31C ABSOLUTE MAXIMUM , Manufacturer MJD31/ 31C NPN EPITAXIAL SILICON TRANSISTOR SC CWWSfW SMN O.Q-t O OS ■T'.or, 01 :i ? r.i.t fc , SEMICONDUCTOR tm This Material Copyrighted By Its Respective Manufacturer MJD31/ 31C NPN EPITAXIAL SILICON


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PDF MJD31/31C TIP31 andTIP31C MJD31 MJD31C QS 100 NPN Transistor MJD31C
transistor tip 31c

Abstract:
Text: MJD31/ 31C NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE AMPLIFIER LOW SPEED SWITCHING APPLICATIONS DPAK FOR SURFACE MOUNT APPLICATIONS · Load Formed fo r Surface M ount Application (No Suffix) · Straight Lead (I.ACK, I" Suffix) · Electrically S im ila r to Popular TIP31 and TIP 31C D-PAK 1 , MJD31/ 31C NPN EPITAXIAL SILICON TRANSISTOR ec eesssmr B A W « W fT fe ft S *t»IW T fO »» , E M IC O N D U C T O R -M T O R I* O F F T IM E MJD31/ 31C NPN EPITAXIAL SILICON TRANSISTOR


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PDF MJD31/31C TIP31 MJD31C MJD31 MJD31C transistor tip 31c tip 31c transistor 31C
Not Available

Abstract:
Text: MJD31/ 31C NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE AMPLIFIER LOW SPEED SWITCHING APPLICATIONS DPAK FOR SURFACE MOUNT APPLICATIONS D-PAK • Load Formed for Surface M ount Application , TIP 31C ABSOLUTE MAXIMUM RATINGS Characteristic C ollector Base Voltage 1. Base 2. C ollector , urrent Min tm 3 V V MHz MJD31/ 31C NPN EPITAXIAL SILICON TRANSISTOR tfWftTBK SA , SEM IC O N D U C TO R t m S A f E Q P £ fiA f IMG A R E A MJD31/ 31C NPN EPITAXIAL


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PDF MJD31/31C TIP31 MJD31 JD31C
1999 - MJD31

Abstract:
Text: MJD31/ 31C NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE AMPLIFIER LOW SPEED SWITCHING APPLICATIONS D-PACK FOR SURFACE MOUNT APPLICATIONS D-PAK · Load Formed for Surface Mount Application (No Suffix) · Straight Lead (I.ACK, "- I" Suffix) · Electrically Similar to Popular TIP31 and TIP31C , . B ©1999 Fairchild Semiconductor Corporation MJD31/ 31C NPN EPITAXIAL SILICON TRANSISTOR MJD31/ 31C NPN EPITAXIAL SILICON TRANSISTOR TRADEMARKS The following are registered and


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PDF MJD31/31C TIP31 TIP31C MJD31 MJD31C MJD31 MJD31C TIP31C
Not Available

Abstract:
Text: °C Unit April 1997 611 MJD31B/ 31C - MJD32B/32C THERMAL DATA Rthjcase Rthi amb Therm al R , ·7 # W f f i B K I M i C I 612 MJD31B/ 31C - MJD32B/32C DC Current Gain (NPN type) DC Current


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PDF MJD31 MJD32B/32C O-252 TIP31B/C TIP32B/C MJD31B MJD31C MJD32B MJD32C MJD31B/32B
MJD31

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Text: No file text available


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PDF MJD31, MJD32, O-252) C-120 MJD31/C Rev260505E MJD31 voltage marking c32 MJD32 marking CODE MX marking code XY MJD31C MJD32C
J32C

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Text: No file text available


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PDF MJD31 MJD31C MJD32 MJD32C O-252 MJD32 J32C J31C
2004 - NPN Silicon Power Transistor DPAK

Abstract:
Text: No file text available


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PDF MJD31, MJD31C MJD32, MJD32C MJD31C MJD32C TIP31 TIP32 MJD31/D NPN Silicon Power Transistor DPAK TIP31 NPN Transistor diagram dpak 369C MJD32 MJD31 DPak Package size data base dpak
2010 - TIP31 NPN Transistor diagram

Abstract:
Text: No file text available


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PDF MJD31, MJD31C MJD32, MJD32C TIP31 TIP32 MJD31/D TIP31 NPN Transistor diagram MJD32C 1N5825 MJD32 MJD31C MJD31 data base dpak 369D
2013 - mjd31c

Abstract:
Text: No file text available


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PDF MJD31, NJVMJD31T4G, MJD31C, NJVMJD31CT4G MJD32, NJVMJD32T4G, MJD32C, NJVMJD32CG, NJVMJD32CT4G TIP31 mjd31c
2013 - Not Available

Abstract:
Text: No file text available


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PDF MJD31, NJVMJD31T4G, MJD31C, NJVMJD31CT4G MJD32, NJVMJD32T4G, MJD32C, NJVMJD32CG, NJVMJD32CT4G TIP31
J32C

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Text: No file text available


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PDF MJD31 MJD31C MJD32 MJD32C O-252 MJD32 J32C J31C J31C TO-252 smd j31c J31C ON J31C smd j32-C smd j32c J31C MARKING
2001 - TIP31 PNP Transistor

Abstract:
Text: No file text available


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PDF MJD31, MJD31C MJD32, MJD32C MJD31C MJD32C TIP31 TIP32 r14525 MJD31/D TIP31 PNP Transistor MJD32 MJD31CRL MJD31 d1 marking code dpak transistor CASE369A 351 D-PAK MARKING CODE
2005 - TIP31 FOOTPRINT

Abstract:
Text: No file text available


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PDF MJD31, MJD31C MJD32, MJD32C MJD31C MJD32C TIP31 TIP32 MJD31/D TIP31 FOOTPRINT TIP31 NPN Transistor MJD32C1G MJD32 MJD31 369D
2001 - TIP31 NPN Transistor diagram

Abstract:
Text: No file text available


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PDF MJD31, MJD31C MJD32, MJD32C MJD31C MJD32C TIP31 TIP32 r14525 MJD31/D TIP31 NPN Transistor diagram MSD6100 MJD32 MJD31CRL MJD31 351 MARKING D-PAK 351 D-PAK MARKING CODE TIP32 PNP Transistor
2005 - 369D

Abstract:
Text: No file text available


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PDF MJD31, MJD31C MJD32, MJD32C MJD31C MJD32C TIP31 TIP32 369D MJD31 MJD31CG MJD32
3543

Abstract:
Text: No file text available


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PDF TIP31 TIP32 MJD31 MJD32 MJD31C MJD32C 3543 vdo 007 MSD6100 MOTOROLA POWER TRANSISTOR ic 3542
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