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Part Manufacturer Supplier Stock Best Price Price Each Buy Part
MJD200 ON Semiconductor Bristol Electronics 706 - -
MJD200G ON Semiconductor Allied Electronics & Automation - $0.65 $0.63
MJD200G ON Semiconductor RS Components 165 £0.39 £0.39
MJD200G ON Semiconductor Bristol Electronics 88 - -
MJD200G ON Semiconductor Avnet 10,556 $0.52 $0.20
MJD200G ON Semiconductor Rochester Electronics 4,557 $0.27 $0.22
MJD200G ON Semiconductor Avnet - $0.26 $0.22
MJD200G ON Semiconductor Future Electronics - $0.23 $0.19
MJD200G. ON Semiconductor Newark element14 10,556 $0.58 $0.18
MJD200RL ON Semiconductor Bristol Electronics 1,249 - -
MJD200RL ON Semiconductor Bristol Electronics 1,001 - -
MJD200RL Motorola Semiconductor Products Bristol Electronics 320 $0.49 $0.18
MJD200RL Motorola Semiconductor Products America II Electronics 1,211 - -
MJD200RLG ON Semiconductor Wuhan P&S 1 $0.37 $0.24
MJD200RLG ON Semiconductor Newark element14 1,804 $0.60 $0.32
MJD200RLG ON Semiconductor Rochester Electronics 12,495 $0.31 $0.25
MJD200RLG ON Semiconductor Avnet - €0.29 €0.21
MJD200RLG ON Semiconductor Future Electronics - $0.24 $0.20
MJD200RLG ON Semiconductor Avnet 1,800 $0.21 $0.19
MJD200T4 ON Semiconductor Chip One Exchange 1,976 - -
MJD200T4 ON Semiconductor Bristol Electronics 211 - -
MJD200T4 Motorola Semiconductor Products Bristol Electronics 1,695 $0.49 $0.14
MJD200T4 ON Semiconductor Rochester Electronics 2,500 $0.34 $0.28
MJD200T4G ON Semiconductor Future Electronics - $0.16 $0.16
MJD200T4G ON Semiconductor Future Electronics - $0.36 $0.18
MJD200T4G ON Semiconductor Newark element14 1,701 $0.61 $0.26
MJD200T4G ON Semiconductor Avnet - $0.15 $0.14
MJD200T4G ON Semiconductor Avnet - $0.31 $0.25
MJD200T4G ON Semiconductor Rochester Electronics 33,300 $0.31 $0.25
MJD200T4G ON Semiconductor Chip1Stop 5,804 $0.38 $0.25
MJD200T4G ON Semiconductor Chip1Stop 5,804 $0.16 $0.14
MJD200T4G ON Semiconductor element14 Asia-Pacific 1,701 $0.58 $0.21
MJD200T4G ON Semiconductor element14 Asia-Pacific - $0.37 $0.24
MJD200T4G ON Semiconductor element14 Asia-Pacific 1,701 $0.58 $0.21
MJD200T4G ON Semiconductor Farnell element14 1,701 £0.35 £0.15
MJD200T4G ON Semiconductor Wuhan P&S 2,850 $0.34 $0.22
SMJD200G ON Semiconductor Rochester Electronics 205 - -

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MJD200 datasheet (35)

Part Manufacturer Description Type PDF
MJD200 Fairchild Semiconductor NPN EPITAXIAL SILICON TRANSISTOR Original PDF
MJD200 Fairchild Semiconductor NPN Epitaxial Silicon Transistor Original PDF
MJD200 Motorola SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS 12.5 WATTS Original PDF
MJD200 On Semiconductor Complementary Plastic Power Transistors Original PDF
MJD200 On Semiconductor Complementary Plastic Power Transistors Original PDF
MJD200 On Semiconductor Complementary Plastic Power Transistor Original PDF
MJD200 On Semiconductor MJD200 - TRANSISTOR 5 A, 25 V, NPN, Si, POWER TRANSISTOR, PLASTIC, CASE 369A, DPAK-3, BIP General Purpose Power Original PDF
MJD200 STMicroelectronics COMPLEMENTARY SILICON POWER TRANSISTORS Original PDF
MJD200 Fairchild Semiconductor NPN EPITAXIAL SILICON TRANSISTOR Scan PDF
MJD200 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
MJD200 Others Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan PDF
MJD200 Others Shortform Data and Cross References (Misc Datasheets) Scan PDF
MJD200-1 Motorola SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS 12.5 WATTS Original PDF
MJD200-1 On Semiconductor MJD200 - TRANSISTOR 5 A, 25 V, NPN, Si, POWER TRANSISTOR, PLASTIC, CASE 369-07, 3 PIN, BIP General Purpose Power Original PDF
MJD200-1 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
MJD200-1 Others Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan PDF
MJD200-1 Others Shortform Data and Cross References (Misc Datasheets) Scan PDF
MJD200-D On Semiconductor Complementary Plastic Power Transistors NPN-PNP Si Original PDF
MJD200G On Semiconductor Bipolar Power DPAK NPN 5A 25V Original PDF
MJD200G On Semiconductor MJD200 - TRANSISTOR 5 A, 25 V, NPN, Si, POWER TRANSISTOR, LEAD FREE, PLASTIC, CASE 369A, DPAK-3, BIP General Purpose Power Original PDF

MJD200 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
PNP 2A DPAK

Abstract: MJD200 MJD210
Text: =2% MJD200_210 Rev180505E Continental Device India Limited UNIT V nA nA nA Data Sheet Page 1 , MJD200_210 Rev180505E Continental Device India Limited Data Sheet Page 2 of 5 UNIT MHz pF pF MJD200 NPN MJD210 PNP DPAK (TO-252) Plastic Package MJD200_210 Rev180505E Continental , Package MJD200_210 Rev180505E Continental Device India Limited Data Sheet Page 4 of 5 , email@cdil.com www.cdilsemi.com MJD200_210 Rev180505E Continental Device India Limited Data Sheet Page 5


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PDF MJD200 MJD210 O-252) C-120 Rev180505E PNP 2A DPAK
2004 - PNP Transistor DPAK

Abstract: No abstract text available
Text: = 10 Vdc, IE = 0, f = 0.1 MHz) fT 65 - - - MHz pF MJD200 MJD210 Cob 80 120 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle [ 2%. 3. fT = hfe· ftest. http://onsemi.com 432 MJD200 (NPN) MJD210 (PNP) ORDERING INFORMATION Device MJD200 MJD200G MJD200RL MJD200RLG MJD200T4 MJD200T4G MJD210 , MJD200 (NPN) MJD210 (PNP) Complementary Plastic Power Transistors NPN/PNP Silicon DPAK For Surface , - Rev. 5 Publication Order Number: MJD200 /D MJD200 (NPN) MJD210 (PNP) MAXIMUM RATINGS


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PDF MJD200 MJD210 PNP Transistor DPAK
2001 - 1N5825

Abstract: MJD200 MJD210 MSD6100
Text: breakdown. Case 369 may be ordered by adding a "­1" suffix to the device title (i.e. MJD200­1 ) 5ms TJ , ON Semiconductort NPN Complementary Plastic Power Transistors MJD200 PNP MJD210 NPN , inches mm Publication Order Number: MJD200 /D 2 http://onsemi.com *When surface mounted on , ) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) MJD200 MJD210 Collector­Emitter Saturation , Ambient* Characteristic THERMAL CHARACTERISTICS MJD200 MJD210 MJD200 MJD210 2 1.5 TC


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PDF MJD200 MJD210 r14525 MJD200/D 1N5825 MJD200 MJD210 MSD6100
2013 - Not Available

Abstract: No abstract text available
Text: ://onsemi.com 5 MJD200 (NPN), MJD210 (PNP) ORDERING INFORMATION Device MJD200G MJD200RLG MJD200T4G , MJD200 (NPN), MJD210 (PNP) Complementary Plastic Power Transistors NPN/PNP Silicon DPAK For , , 2013 1 September, 2013 - Rev. 13 Publication Order Number: MJD200 /D MJD200 (NPN), MJD210 , , ftest = 10 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) MJD200 MJD210, NJVMJD210T4G 3 , MJD200 (NPN), MJD210 (PNP) TA 2.5 PD, POWER DISSIPATION (WATTS) TC 25 25 ms +11 V 1.5 15 TA (SURFACE


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PDF MJD200 MJD210 AEC-Q101 MJD200/D
2001 - Not Available

Abstract: No abstract text available
Text: MJD200 MJD200 D-PAK for Surface Mount Applications · · · · High DC Current Gain Built-in a , Corporation Rev. A2, June 2001 MJD200 Typical Characteristics VCE(sat), VBE(sat) [V], SATURATION , Operating Area ©2001 Fairchild Semiconductor Corporation Rev. A2, June 2001 MJD200 Typical , Fairchild Semiconductor Corporation Rev. A2, June 2001 MJD200 Package Demensions D-PAK 6.60 , Production ©2001 Fairchild Semiconductor Corporation Rev. H3 Product Folder - Fairchild P/N MJD200


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PDF MJD200 O-252
2011 - MJD200

Abstract: MJD200G MJD200RLG MJD200T4G MJD210 MJD210G MJD210RLG MJD210T4
Text: INFORMATION Package Type Shipping MJD200G DPAK (Pb-Free) 75 Units / Rail MJD200RLG DPAK , MJD200 (NPN) MJD210 (PNP) Complementary Plastic Power Transistors NPN/PNP Silicon DPAK For , Components Industries, LLC, 2011 January, 2011 - Rev. 10 1 Publication Order Number: MJD200 /D MJD200 (NPN) MJD210 (PNP) THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal , , VCE = 10 Vdc, ftest = 10 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) MJD200


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PDF MJD200 MJD210 MJD200/D MJD200 MJD200G MJD200RLG MJD200T4G MJD210 MJD210G MJD210RLG MJD210T4
2005 - MJD200RL

Abstract: 1N5825 MJD200 MJD200G MJD200RLG MJD200T4 MJD210 MSD6100
Text: & Reel Device MJD200 MJD200RLG MJD200T4 MJD200T4G MJD210 DPAK 75 Units / Rail , 75 Units / Rail MJD200G DPAK (Pb-Free) 75 Units / Rail MJD200RL DPAK 1800 Tape & , MJD200 (NPN) MJD210 (PNP) Complementary Plastic Power Transistors NPN/PNP Silicon DPAK For , the package dimensions section on page 6 of this data sheet. Publication Order Number: MJD200 /D MJD200 (NPN) MJD210 (PNP) MAXIMUM RATINGS Rating Symbol Max Unit VCB 40 Vdc VCEO


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PDF MJD200 MJD210 MJD200/D MJD200RL 1N5825 MJD200 MJD200G MJD200RLG MJD200T4 MJD210 MSD6100
2001 - 1N5825

Abstract: MJD200 MJD210 MSD6100
Text: (i.e. MJD200­1 ) 5ms TJ = 150°C 100µs 1ms 500µs dc BONDING WIRE LIMITED THERMALLY , ON Semiconductort NPN Complementary Plastic Power Transistors MJD200 PNP MJD210 NPN , , 2001 ­ Rev. 4 1 inches mm Publication Order Number: MJD200 /D 2 http://onsemi.com , ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (continued) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) MJD200 MJD210 , Resistance, Junction to Ambient* Characteristic THERMAL CHARACTERISTICS MJD200 MJD210 MJD200


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PDF MJD200 MJD210 r14525 MJD200/D 1N5825 MJD200 MJD210 MSD6100
2001 - 1N5825

Abstract: MJD200 MJD210 MSD6100
Text: breakdown. Case 369 may be ordered by adding a "­1" suffix to the device title (i.e. MJD200­1 ) 5ms TJ , ON Semiconductort NPN Complementary Plastic Power Transistors MJD200 PNP MJD210 NPN , Order Number: MJD200 /D 2 http://onsemi.com *When surface mounted on minimum pad sizes , Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) MJD200 MJD210 Collector­Emitter Saturation Voltage (2 , Ambient* Characteristic THERMAL CHARACTERISTICS MJD200 MJD210 MJD200 MJD210 2 1.5 TC


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PDF MJD200 MJD210 r14525 MJD200/D 1N5825 MJD200 MJD210 MSD6100
2010 - MJD200

Abstract: MJD200G MJD200RL MJD200RLG MJD200T4 MJD200T4G MJD210 MJD210G
Text: , f = 0.1 MHz) MJD200 MJD210 3. Pulse Test: Pulse Width = 300 ms, Duty Cycle [ 2%. 4. fT = hfe· ftest. ORDERING INFORMATION Device MJD200 Package Type Shipping DPAK MJD200G DPAK (Pb-Free) MJD200RL 75 Units / Rail DPAK MJD200RLG MJD200T4 MJD200T4G MJD210 DPAK , MJD200 (NPN) MJD210 (PNP) Complementary Plastic Power Transistors NPN/PNP Silicon DPAK For , Industries, LLC, 2010 July, 2010 - Rev. 9 1 Publication Order Number: MJD200 /D MJD200 (NPN


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PDF MJD200 MJD210 MJD200/D MJD200 MJD200G MJD200RL MJD200RLG MJD200T4 MJD200T4G MJD210 MJD210G
2012 - NJVMJD210T4G

Abstract: PNP Transistor DPAK
Text: (on) fT Vdc Vdc DYNAMIC CHARACTERISTICS 65 - - - MHz pF MJD200 MJD210, NJVMJD210T4G Cob 80 120 3. Pulse Test: Pulse Width = 300 ms, Duty Cycle [ 2%. 4. fT = hfe ftest. http://onsemi.com 2 MJD200 (NPN), MJD210, NJVMJD210T4G (PNP) ORDERING INFORMATION Device MJD200G MJD200RLG MJD200T4G MJD210G , MJD200 (NPN), MJD210, NJVMJD210T4G (PNP) Complementary Plastic Power Transistors NPN/PNP Silicon , Publication Order Number: MJD200 /D MJD200 (NPN), MJD210, NJVMJD210T4G (PNP) MAXIMUM RATINGS Rating


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PDF MJD200 MJD210, NJVMJD210T4G MJD200/D NJVMJD210T4G PNP Transistor DPAK
2005 - MJD210

Abstract: MJD210G MJD200 MJD200G MJD200RL MJD200RLG MJD200T4 MJD200T4G
Text: INFORMATION Device MJD200 Package Type Shipping DPAK MJD200G DPAK (Pb-Free) MJD200RL 75 Units / Rail DPAK MJD200RLG MJD200T4 MJD200T4G MJD210 DPAK (Pb-Free) 1800 / Tape & , MJD200 (NPN) MJD210 (PNP) Complementary Plastic Power Transistors NPN/PNP Silicon DPAK For , Industries, LLC, 2005 December, 2005 - Rev. 7 1 Publication Order Number: MJD200 /D MJD200 (NPN , , VCE = 10 Vdc, ftest = 10 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) MJD200


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PDF MJD200 MJD210 MJD200/D MJD210 MJD210G MJD200 MJD200G MJD200RL MJD200RLG MJD200T4 MJD200T4G
2006 - MJD200

Abstract: MJD200G MJD200RL MJD200RLG MJD200T4 MJD200T4G MJD210 MJD210G
Text: INFORMATION Device MJD200 Package Type Shipping DPAK MJD200G DPAK (Pb-Free) MJD200RL 75 Units / Rail DPAK MJD200RLG MJD200T4 MJD200T4G MJD210 DPAK (Pb-Free) 1800 / Tape & , MJD200 (NPN) MJD210 (PNP) Complementary Plastic Power Transistors NPN/PNP Silicon DPAK For , , LLC, 2006 August, 2006 - Rev. 8 1 Publication Order Number: MJD200 /D MJD200 (NPN) MJD210 , , VCE = 10 Vdc, ftest = 10 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) MJD200


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PDF MJD200 MJD210 MJD200/D MJD200 MJD200G MJD200RL MJD200RLG MJD200T4 MJD200T4G MJD210 MJD210G
TI05

Abstract: MJD200 transistor nc
Text:  MJD200 NPN EPITAXIAL SILICON TRANSISTOR DPAK FOR SURFACE MOUNT APPLICATIONS • High DC Current Gain • Built-in a Damper Diode at E-C • Lead Formed for Surface Mount Applications (No Suffix) « Straight Lead (I. PACK," - I" Suffix) ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating , MJD200 NPN EPITAXIAL SILICON TRANSISTOR nc mmmsH* SAW : 1j:11 I Î& IlÉSI • - , This Material Copyrighted By Its Respective Manufacturer MJD200 NPN EPITAXIAL SILICON TRANSISTOR


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PDF MJD200 TI05 MJD200 transistor nc
1995 - 1N5825

Abstract: MJD200 MJD210 MSD6100
Text: "­1" suffix to the device title (i.e. MJD200­1 ) v 1 2 3 5 7 10 20 VCE, COLLECTOR­EMITTER , SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS 12.5 WATTS MJD200 PNP MJD210 Complementary Plastic Power Transistors NPN SEMICONDUCTOR TECHNICAL DATA Order this document by MJD200 /D , CURRENT (AMPS) 5 3 2 5 10 MJD200 MJD210 10 VCC = 30 V IC/IB = 10 TJ = 25 , 0.3 0.5 1 2 IC, COLLECTOR CURRENT (AMPS) 50 30 20 tr MJD200 MJD210 3 5 10 tf


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PDF MJD200/D* MJD200/D 1N5825 MJD200 MJD210 MSD6100
MJD200

Abstract: MJD210 fr 0204 TO252-DPAK 0212c
Text:  MJD200 MJD210 COMPLEMENTARY SILICON POWER TRANSISTORS . STM PREFERRED SALESTYPES . , ) APPLICATIONS . AUDIO AMPLIFIERS DESCRIPTION The MJD200 is an Epitaxial-Base NPN transistor designed for low , ) ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit NPN MJD200 PNP MJD210 VcBO Collector-Base , 150 °c For PNP types voltage and current values are negative. June 1998 1/4 MJD200 / MJD210 , duration = 300 |xs, duty cycle < 2 % For PNP type voltage and current values are negative. 2/4 MJD200


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PDF MJD200 MJD210 O-252 MJD210. MJD200 MJD210 fr 0204 TO252-DPAK 0212c
Not Available

Abstract: No abstract text available
Text: MOTOROLA Order this document by MJD200 /D SEMICONDUCTOR TECHNICAL DATA NPN M JD 200 PNP , 'CBO nAdc (continued) ftf) M O T O R O L A MJD200 MJD210 ELECTRICAL CHARACTERISTICS â , , ffest = 10 MHz) Output Capacitance (VCB = 10 Vdc, lE = 0, f = 0.1 MHz) MJD200 MJD210 — (1 , . Turn-Off Time Motorola Bipolar Power Transistor Device Data MJD200 MJD210 PNP MJD210 lC , C O LLE , G A IN NPN MJD200 v . VOLTAGE (VOLTS) Figure 5. DC Current Gain lc , C O LLE C T O R


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PDF MJD200/D
Not Available

Abstract: No abstract text available
Text: (Pb−Free) 75 Units / Rail MJD200RLG DPAK (Pb−Free) 1,800 / Tape & Reel MJD200T4G DPAK , MJD200 (NPN), MJD210, NJVMJD210T4G (PNP) Complementary Plastic Power Transistors NPN/PNP , Publication Order Number: MJD200 /D MJD200 (NPN), MJD210, NJVMJD210T4G (PNP) MAXIMUM RATINGS Rating , , IE = 0, f = 0.1 MHz) fT MJD200 MJD210, NJVMJD210T4G 3. Pulse Test: Pulse Width = 300 ms, Duty Cycle [ 2%. 4. fT = hfe ftest. http://onsemi.com 2 Cob MHz pF MJD200 (NPN


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PDF MJD200 MJD210, NJVMJD210T4G MJD200/D
2000 - Not Available

Abstract: No abstract text available
Text: MJD200 MJD200 D-PACK for Surface Mount Applications · · · · High DC Current Gain Built-in a Damper Diode at E-C Lead Formed for Surface Mount Applications (No Suffix) Straight Lead (I. PACK, " - I , International Rev. A, February 2000 MJD200 Typical Characteristics ©2000 Fairchild Semiconductor International Rev. A, February 2000 MJD200 Typical Characteristics (continued) ©2000 Fairchild Semiconductor International Rev. A, February 2000 MJD200 Package Dimensions D-PAK 6.60 ±0.20 5.34


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PDF MJD200
2001 - MJD200

Abstract: No abstract text available
Text: MJD200 MJD200 D-PACK for Surface Mount Applications · · · · High DC Current Gain Built-in a Damper Diode at E-C Lead Formed for Surface Mount Applications (No Suffix) Straight Lead (I , . A1, February 2001 MJD200 hFE, DC CURRENT GAIN 1000 100 VCE=2V VCE=1V 10 1 0.01 , VOLTAGE Figure 6. Safe Operating Area Rev. A1, February 2001 MJD200 Typical Characteristics , Fairchild Semiconductor Corporation Rev. A1, February 2001 MJD200 Package Demensions D-PAK


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PDF MJD200 25nner MJD200
1998 - MJD210

Abstract: MJD200 NPN Silicon Power Transistor DPAK
Text: MJD200 MJD210 ® COMPLEMENTARY SILICON POWER TRANSISTORS s s s STM PREFERRED SALESTYPES , ) APPLICATIONS AUDIO AMPLIFIERS 3 s 1 DESCRIPTION The MJD200 is an Epitaxial-Base NPN transistor , Junction Temperature Value MJD200 MJD210 40 25 8 5 10 12.5 -65 to 150 150 Unit V V V , MJD200 / MJD210 THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-case Thermal , MJD200 / MJD210 TO-252 (DPAK) MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP


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PDF MJD200 MJD210 O-252 MJD200 MJD210. MJD210 NPN Silicon Power Transistor DPAK
1997 - MJD200

Abstract: MJD210
Text: MJD200 MJD210 COMPLEMENTARY SILICON POWER TRANSISTORS s s SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES APPLICATIONS AUDIO AMPLIFIERS s DESCRIPTION The MJD200 is an , Storage Temperature Max Operating Junction Temperature Value MJD200 MJD210 40 25 8 5 10 12.5 , are negative. July 1997 1/4 MJD200 / MJD210 THERMAL DATA R thj-case R thj-amb Thermal , MHz 180 MJD200 / MJD210 TO-252 (DPAK) MECHANICAL DATA mm DIM. MIN. inch TYP


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PDF MJD200 MJD210 MJD200 MJD210. O-252 MJD210
2001 - MJD200

Abstract: No abstract text available
Text: MJD200 MJD200 D-PAK for Surface Mount Applications · · · · High DC Current Gain Built-in a Damper Diode at E-C Lead Formed for Surface Mount Applications (No Suffix) Straight Lead , . A2, June 2001 MJD200 hFE, DC CURRENT GAIN 1000 100 VCE=2V VCE=1V 10 1 0.01 , VOLTAGE Figure 6. Safe Operating Area Rev. A2, June 2001 MJD200 Typical Characteristics , Fairchild Semiconductor Corporation Rev. A2, June 2001 MJD200 Package Demensions D-PAK 0.50


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PDF MJD200 MJD200
DPAK

Abstract: MJD200 MJD210RL MJD210G MJD210 MJD200T4G MJD200T4 MJD200RLG MJD200RL MJD200G
Text: , f = 0.1 MHz) MJD200 MJD210 3. Pulse Test: Pulse Width = 300 ms, Duty Cycle [ 2%. 4. fT = hfe· ftest. ORDERING INFORMATION Device MJD200 Package Type Shipping DPAK MJD200G DPAK (Pb-Free) MJD200RL 75 Units / Rail DPAK MJD200RLG MJD200T4 MJD200T4G MJD210 DPAK , MJD200 (NPN) MJD210 (PNP) Complementary Plastic Power Transistors NPN/PNP Silicon DPAK For , the minimum pad sizes recommended. 1 G MJD200 (NPN) MJD210 (PNP) THERMAL CHARACTERISTICS


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PDF MJD200 MJD210 DPAK MJD200 MJD210RL MJD210G MJD210 MJD200T4G MJD200T4 MJD200RLG MJD200RL MJD200G
Not Available

Abstract: No abstract text available
Text: NPN EPITAXIAL SILICON TRANSISTOR MJD200 DPAK FOR SURFACE MOUNT APPLICATIONS D -P A K • H ig h D C C u rre n t G a in • B u ilt-in a D a m p e r D io d e a t E -C • L e a d F o rm e d fo r S u rfa c e M o u n t A p p lic a tio n s (N o S u ffix ) • S tra ig h t L e a d (I. P A C , 80 PF MJD200 NPN EPITAXIAL SILICON TRANSISTOR BASE EMITTER SATURATO»? VOJ.TAQE COLLECTOR , NPN EPITAXIAL SILICON TRANSISTOR MJD200 P WR DtSStf'A'FfOh OE POWER 0 £¥WcriMG Te


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