The Datasheet Archive

MJ413 datasheet (18)

Part Manufacturer Description Type PDF
MJ413 Micro Commercial Components 10 Amp NPN Silicon Power Transistors 125W Original PDF
MJ413 Motorola 10 AMPERE POWER TRANSISTORS NPN SILICON Original PDF
MJ413 Semelab Bipolar NPN Device in a Hermetically Sealed TO3 Metal Package Original PDF
MJ413 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
MJ413 Motorola Motorola Semiconductor Datasheet Library Scan PDF
MJ413 Motorola The European Selection Data Book 1976 Scan PDF
MJ413 Motorola Semiconductor Data Library Volume 3 1974 Scan PDF
MJ413 Motorola European Master Selection Guide 1986 Scan PDF
MJ413 Others Shortform Transistor PDF Datasheet Scan PDF
MJ413 Others Transistor Replacements Scan PDF
MJ413 Others Transistor Replacements Scan PDF
MJ413 Others Transistor Replacements Scan PDF
MJ413 Others Semiconductor Master Cross Reference Guide Scan PDF
MJ413 Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
MJ413 Others Shortform Transistor Datasheet Guide Scan PDF
MJ413 Others Vintage Transistor Datasheets Scan PDF
MJ413 Semiconductor Technology NPN High Voltage Power Transistors in TO-3 and TO-220 Case Outline Scan PDF
MJ413-BP Micro Commercial Components TRANS GP BJT NPN 400V 10A 2TO-3 Original PDF

MJ413 Datasheets Context Search

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MJ423

Abstract: MJ413 J413 NIJ431 MJ431
Text:  MJ413 (SILICON) MJ423 MJ431 CASE 11 High-voltage NPN silicon transistors designed for , CASE: COLLECTOR maximum ratings Rating Symbol MJ413 MJ423 MJ431 Unit Collector-Emitter Voltage v CEX , €ž_ = 400 Vdc, V_, „,= 1. 5 Vdc) MJ413 , MJ423 CE EB(of[) MJ431 (VCE= 400 Vdc, VEB(off) = 1. 5 Vdc, MJ413 , MJ423 TC=125'C) MJ431 ®CEX _ 0.25 2.5 0.5 5.0 mAdc mAdc Emitter Cutoff Current (V„ = 5.0 Vdc , . 5 Adc, VCE = 5. 0 Vdc) MJ413 hFE 20 80 -


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PDF MJ413 MJ423 MJ431 MJ413 MJ431 J413 NIJ431
1995 - MJ413

Abstract: MJ423 MOTOROLA TRANSISTOR mj423 motorola
Text: 1.0 Adc, IB ­ 0.10 Adc) MJ413 MJ423 Base­Emitter Saturation Voltage (IC = 0.5 Adc, IB = 0.05 Adc) (IC = 1.0 Adc, IB = 0.1 Adc) MJ413 MJ423 DC Current Gain(1) (IC = 0.5 Adc, VCE = 5.0 Vdc , ) Vdc VCE(sat) MJ423 MJ413 Vdc hFE - ON CHARACTERISTICS Collector Cutoff Current , MJ413 MJ423 Unit VCEX VCB 400 400 Vdc 400 400 Vdc VEB IC 5.0 5.0 , Transistors MJ413 MJ423 SEMICONDUCTOR TECHNICAL DATA Order this document by MJ413 /D MOTOROLA


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PDF MJ413/D* MJ413/D MJ413 MJ423 MOTOROLA TRANSISTOR mj423 motorola
MJ423

Abstract: MJ413 MJ431
Text: MCC )HDWXUHV · · · MJ413 MJ423 MJ431 omponents 21201 Itasca Street Chatsworth , MJ413 , MJ423 & MJ431 (OHFWULFDO &KDUDFWHULVWLFV # °& 8QOHVV 2WKHUZLVH 6SHFLILHG Characteristic OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage(1) (IC=100mA, IB=0) Collector Cutoff Current MJ413 MJ423 (VCE=400V, VEB(off)=1.5V) MJ431 MJ413 MJ423 (VCE=400V, VEB(off)=1.5V, TC=125 ) MJ431 Emitter Cutoff Current MJ413 MJ423 (VBE=5.0Vdc, IC=0) MJ431 ON CHARACTERISTICS DC Current Gain MJ413 (IC


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PDF MJ413 MJ423 MJ431 MJ423 MJ413 MJ431
J413

Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJ413 /D High-Voltage NPN , Frequency Response to 2.5 MHz MJ413 MJ423 10 AMPERE POWER TRANSISTORS NPN SILICON 400 VOLTS 125 WATTS , perating Junction Temperature Range Storage Temperature Range Tj Tstg Symbol VCEX VCB Veb ic MJ413 , itter Saturation Voltage (I q = 0.5 Ade, Iß = 0.05 Ade) (I q = 1.0 Ade, Iß = 0.1 Ade) MJ413 MJ423 MJ413 MJ423 v BE(sat) - - 1.25 1.25 v CE(sat) - - 0.8 0.8 Vdc MJ423 MJ413 hFE 20 15 30 10 80 90 Vdc


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PDF MJ413/D MJ413 MJ423 MJ413 O-204AA J413
mj413

Abstract: No abstract text available
Text: DATA SEMICONDUCTOR MJ413 MJ423 MJ431 HIGH-VOLTAGE NPN SILICON TRA N SISTO RS . . . designed , Temperature Range Symbol VCEX YCB VEB MJ413 400 400 s.o ID 2.0 MJ423 400 400 5.0 *c *B *D id , (BRiCEOCsua) MJ413 , MJ423 HJ413, MJ423 w ,« , M J « j . MMM *CEX Vdc 325 - mAdc Ë *EBO _ 0.25 , Ade) MJ413 MJ423 MJ43I MJ413 MJ423 I4J431 VBE(sat) VCE(sat) MJ431 MJ423 MJ413 hF E 20 15 30 10 15 10 , -3) Duty Cycle k 2.0% 3-524 MOTORCLA SC XSTRS/R F 15E D £ b3ti7SS4 OOflMTÎQ 0 I MJ413


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PDF MJ413 MJ423 MJ431
mj431

Abstract: No abstract text available
Text: . TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 MJ413 MJ423 MJ431 Features • â , MJ413 , MJ423 & MJ431 Electrical Characteristics @ 25 °C Unless Otherwise Specified Characteristic , , MJ41 3 MJ423 TC=125°C) MJ431 Emitter Cutoff Current IEBO (VBE=5.0Vdc, lc=0) MJ413MJ423 MJ431 ON CHARACTERISTICS DC Current Gain hFE (IC=0.5A, VCE=5.0V) MJ413 (IC=1.0A, VCE=5.0V) (IC , =5.0V) Collector-Emitter Saturation Voltage VcE(sat) (IC=0.5A, IB=0.05A) MJ413 (IC=1.0A, IB=0.1A) MJ423 (IC=2.5A, IB


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PDF MJ413 MJ423 MJ431 mj431
MJ413

Abstract: J413M mj423 motorola WS300
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High-Voltage NPN Silicon Transistors . . . designed for m edium -to-high voltage inverters, converters, regulators and switching circuits. · · · High Voltage - V q e x = 400 Vdc Gain Specified to 3.5 Amp High Frequency Response to 2.5 MHz M J413 M J423 10 AMPERE POWER TRANSISTORS NPN SILICON 400 VOLTS 125 WATTS MAXIMUM RATINGS Rating Symbol MJ413 , ) MJ413 MJ423 20 15 30 10 VCE(sat) MJ413 MJ423 VßE(sat) MJ413 MJ423 - - - - 80 90


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PDF MJ413 MJ423 J413M mj423 motorola WS300
MJ413

Abstract: No abstract text available
Text: SavantIC Semiconductor Product Specification MJ413 Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·High voltage APPLICATIONS ·Designed for medium-to-high voltage Inverters,converters,regulators and switching circuits PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 , junction to case MAX 1.0 UNIT /W SavantIC Semiconductor Product Specification MJ413 , PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3 MJ413 -


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PDF MJ413 MJ413
DC DC converter 50mA 400V

Abstract: npn transistor 400V 400V voltage regulator DC DC converter 5v to 400V 400V 100MA NPN diode 400v 0.5a npn transistors 400V 1A MJ413
Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor MJ413 DESCRIPTION ·High Collector-Emitter Sustaining Voltage: VCEO(SUS)= 325V(Min.) ·DC Current Gain: hFE= 20-80@ IC= 0.5A APPLICATIONS ·Designed for medium to high voltage inverters, converters, regulators and switching circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VCBO , MJ413 ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER VCEO(SUS


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PDF MJ413 100mA; DC DC converter 50mA 400V npn transistor 400V 400V voltage regulator DC DC converter 5v to 400V 400V 100MA NPN diode 400v 0.5a npn transistors 400V 1A MJ413
MC1566L

Abstract: MC1466L equivalent MC1566 1466 HO MC1466 MC1466L schematic of mc1466 Transistor B 1566 MC 1466 L MJE340 REGULATOR
Text: the pass transistor. Figure 13 shows a safe area curve for the MJ413. Looking at Figure 3, we see that , FIGURE 13 - SAFE AREA CURVE FOR THE MJ413 1.i o 0.01 tf # «« Tj - ISO' C — SECONDARY BREAKDOWN , 8 J 1N4001 OR EQUIV 12 1.2 k 10 pF 240 pF 11 «1 1 k 10 Vin - 210 V MJ413 OR EQUIV 18 k -vw «2 200 , MC1566 8 3 1.2 k 240 pF 11 10 il 8.55 k R ref Note: All Ground Connections at Load Site. m MJ413 OR , All diodes are 1N4001 or equivalent. 13 100 IVIU I tvv MC1566 1.2 k 240 pF 11 Vin = 260 V MJ413 OR


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PDF MC1466/MC1566 MC1566 MJ413 MC1466L, MC1566L MJE340 1N4001 Q-TO-40 MC1466L equivalent 1466 HO MC1466 MC1466L schematic of mc1466 Transistor B 1566 MC 1466 L MJE340 REGULATOR
2002 - Not Available

Abstract: No abstract text available
Text: MJ413 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 0.97 (0.060) 1.10 (0.043) 29.9 (1.177) 30.4 (1.197) 22.23 (0.875) max. 16.64 (0.655) 17.15 (0.675) 1 2 Bipolar NPN Device. VCEO = 400V 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) IC = 10A All Semelab hermetically sealed products can


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PDF MJ413 O204AA) 18-Jun-02
mj 13003

Abstract: transistor MJ 13009 transistor MJ 13003 transistor MJ 13007 MJE13000 mj 13002 mj 13007 MJE13000 series 13002 and 13003 power transistor mj 13009
Text: STI-410 200 10 2.5 TO-3 MJ411 STI-411 300 10 2.5 TO-3 MJ413 STI-413 400* 15 1.0 TO-3 MJ423 STI


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PDF T0-220 MJE13000 MJ410 STI-410 MJ411 STI-411 MJ413 STI-413 MJ423 mj 13003 transistor MJ 13009 transistor MJ 13003 transistor MJ 13007 mj 13002 mj 13007 MJE13000 series 13002 and 13003 power transistor mj 13009
2002 - MJ413

Abstract: No abstract text available
Text: MJ413 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44) 1 Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. Bipolar NPN Device. VCEO = 400V 3 (case) 3.84 (0.151) 4.09 (0.161) IC = 10A 7.92 (0.312) 12.70 (0.50) All Semelab hermetically


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PDF MJ413 O204AA) 31-Jul-02 MJ413
2002 - Not Available

Abstract: No abstract text available
Text: MJ413 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 0.97 (0.060) 1.10 (0.043) 29.9 (1.177) 30.4 (1.197) 22.23 (0.875) max. 16.64 (0.655) 17.15 (0.675) 1 2 Bipolar NPN Device. VCEO = 400V 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) IC = 10A All Semelab hermetically sealed products can


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PDF MJ413 O204AA) 16-Jul-02
MJ413

Abstract: MJ431 MJ450
Text: MJ431 _ , T , , MMMD, For Specifications, See MJ413 Data. MJ450 (SILICON) HIGH-POWER PNP SILICON TRANSISTOR . designed for high-current switching and general purpose amplifier applications. • Low Saturation Voltage - VcE(sat) " 1 0 Vdc @


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PDF MJ431 MJ413 MJ450 40Vdc, MJ431 MJ450
MJ3029

Abstract: MJ3011 MJ7261 MJ3010 2N3902 MJ9000 MJ-43 2N6545 2N6307 Motorola 2N5157
Text: MOTOROL A SC {D IODES/OPT O} 3M DE |t.3b?5S5 D037TSS 6367255 MOTOROLA SC CDIODES/OPTO) 34C 37955 SILICON POWER TRANSISTOR DICE (continued) T '3 3 DIE NO. - NPN LINE SOURCE - PL500.366 2C6545 & Designed for highvoltage inverters, converters, and switching regulator applications. This die provides performance equal to or better than that of the following device types: 2N3902 2N5157 2N5241 2N6306 2N6307 2N6308 2N6544 2N6545 MJ410 MJ411 MJ413 MJ423 MJ424


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PDF D037TSS PL500 2C6545 2N3902 2N5157 2N5241 2N6306 2N6307 2N6308 2N6544 MJ3029 MJ3011 MJ7261 MJ3010 MJ9000 MJ-43 2N6545 2N6307 Motorola
MJ423

Abstract: MJ420 MJ413 MJ421
Text: , COLLECTOR CURRENT (mAdc) VCB. COLLECTOR-BASE VOLTAGE (VOLTS) MJ423 For Specifications, See MJ413 Data. 375


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PDF MJ420 MJ421 MJ420 MJ421 MJ423 MJ413 MJ423
PP4058

Abstract: PT500 table SDT8923 SDT423 PT8502 AT-1142 SDT425 SDT8602 SDT9630 2N3442
Text: -2 SDT5850 SDT99502 SPP2147 49 KSP1256 S2N5539-3 SDT5851 SDT99503 SPP2148 50 MJ413


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PDF 2SD14 PP4058 SDT14411 SDT55404 SDT8002 SDT9610 SML14411 SPC163-04 TIP533 AT-1142 PP4058 PT500 table SDT8923 SDT423 PT8502 AT-1142 SDT425 SDT8602 SDT9630 2N3442
but16

Abstract: MJ4247 MJ12005 2N3792 MOTOROLA 2N3442 BDX66 MOTOROLA MJ423 MJ10006 MJ16028 transistor mj3001
Text: 5 5 4 4 150 150 150 140 2N3442 20/70 4 117 250 MJ15011 M415012 20/100 2 200 325 MJ413


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PDF MJ1000 BDX63 MJ900 BDX62 MJ1001 BDX63A MJ901 BDX62A BDX63B BDX62B but16 MJ4247 MJ12005 2N3792 MOTOROLA 2N3442 BDX66 MOTOROLA MJ423 MJ10006 MJ16028 transistor mj3001
MJ1000

Abstract: mj2955
Text: BUX42 BUX43 BUX44 BUX45 BUX47 BUX48 BUX69A BUX69B BUX69C MJ410 MJ411 MJ413 MJ423 MJ431


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PDF 00D5M BUX32 BUX32A BUX37 BUX39 BUX41 BUX41N BUX42 BUX43 BUX44 MJ1000 mj2955
2001 - transistor MJ2501

Abstract: BU108 transistor 2sC2238 transistor sdt9201 BDX54 transistor 2SD425 BU326 BU100
Text: MJ413 MJ423 10 AMPERE POWER TRANSISTORS NPN SILICON 400 VOLTS 125 WATTS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ , Symbol VCEX VCB VEB IC IB PD MJ413 400 400 5.0 10 MJ423 400 400 5.0 10 Unit Vdc Vdc Vdc Adc Adc , ON CHARACTERISTICS - MJ413 MJ423 20 15 30 10 80 - 90 - Collector­Emitter Saturation , (IC = 0.5 Adc, IB = 0.05 Adc) (IC = 1.0 Adc, IB = 0.1 Adc) VCE(sat) Vdc MJ413 MJ423 - - - - 0.8 0.8 VBE(sat) Vdc MJ413 MJ423 1.25 1.25 DYNAMIC CHARACTERISTICS


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PDF MJ413 MJ423 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C transistor MJ2501 BU108 transistor 2sC2238 transistor sdt9201 BDX54 transistor 2SD425 BU326 BU100
BUT16

Abstract: MJ12005 MJ4247 BU800 MJ423 MJ-4247 MJ10011 BDX66 MOTOROLA mj6503 motorola MJ4237
Text: 200 325 MJ413 MJ423 30/90 1 2.5 125 350 MJ10006 BU323 30/300 350 typ c. 6 1.5 7.5 typ 0.5 5.2


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PDF MJ8500 BU204 BU205 2N4901 2N4902 2N4903 MJ410 MJ411 MJ16002 MJ16004 BUT16 MJ12005 MJ4247 BU800 MJ423 MJ-4247 MJ10011 BDX66 MOTOROLA mj6503 motorola MJ4237
BD313

Abstract: B0343 BDX55 BDX56 BD-316 MJ423 bu223 BDX57 BD343 BD314
Text: -3 MJ413 325 20/ 80 0.5 0.8 0.5 2.5 125 TO-3 MJ423 325 30/ 90 1.0 0.8 1.0 2.5 125 TO-3 BU223 350 3.3/-


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PDF BDX55 BDX56 BDX57 2N5427 2N5428 2N5429 2N5430 MJ3040 MJ3041 BU322 BD313 B0343 BDX55 BDX56 BD-316 MJ423 bu223 BDX57 BD343 BD314
2001 - 2SA1046

Abstract: mje15033 replacement 2SC1030 BD417 BD415 BU108 2SB528 BD262 2SC2080 BD295
Text: (2) MJ2501 (2) 1k min 20/70 140 250 325 2N3442 MJ15011 MJ413 MJ423 MJ15012 20


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PDF 2N6057 2N6059 2N6050) 2N6111, 2N6288 2N6109 2N6107, 2N6292 2SA1046 mje15033 replacement 2SC1030 BD417 BD415 BU108 2SB528 BD262 2SC2080 BD295
2001 - equivalent to tip162

Abstract: 2N3055 BU108 2SA1046 2n6258 2N5981 pnp transistor 2sd314 BD262 bd876 BU100
Text: 325 2N3442 MJ15011 MJ413 MJ423 MJ15012 20/100 20/80 30/90 150 min 30/300 100/2k 400


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PDF 2N6338 2N6339 2N6340 2N6341 2N6436 Continu32 TIP73B TIP74 TIP74A TIP74B equivalent to tip162 2N3055 BU108 2SA1046 2n6258 2N5981 pnp transistor 2sd314 BD262 bd876 BU100
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