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LT1222MH Linear Technology IC OP-AMP, MBCY, Operational Amplifier

MJ2955 300 watts amplifier circuit diagram Datasheets Context Search

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2005 - 2n3055

Abstract: 2N3055 NPN Transistor 2n3055 circuit diagram 2N3055 power amplifier circuit diagram 2n3055 application note MJ2955 2n3055 200 watts amplifier diagram
Text: Area http://onsemi.com 2 2N3055(NPN), MJ2955 (PNP) 500 200 300 VCE = 4.0 V TJ = 150 , 2N3055(NPN), MJ2955 (PNP) Preferred Device Complementary Silicon Power Transistors Complementary silicon power transistors are designed for general−purpose switching and amplifier applications , , 115 WATTS VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc Excellent Safe Operating Area Pb−Free Packages , 1−07 STYLE 1 °C Operating and Storage Junction Temperature Range MARKING DIAGRAM Maximum


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PDF 2N3055 MJ2955 2N3055/D 2N3055 NPN Transistor 2n3055 circuit diagram 2N3055 power amplifier circuit diagram 2n3055 application note MJ2955 2n3055 200 watts amplifier diagram
2003 - MJ2955 300 watts amplifier circuit diagram

Abstract: MJ2955 2n3055 200 watts amplifier MJ2955 2n3055 200 watts amplifier diagram MJ2955 300 watts amplifier 2N3055 power amplifier circuit 2N3055 2n3055 application note 2n3055 circuit diagram 2N3055 power amplifier circuit diagram MJ2955 TRANSISTOR
Text: Figure 2. Active Region Safe Operating Area http://onsemi.com 2 2N3055, MJ2955 500 200 300 , 2N3055, MJ2955 Preferred Device Complementary Silicon Power Transistors . . . designed for general-purpose switching and amplifier applications. · DC Current Gain - hFE = 20 -70 @ IC = 4 Adc · , POWER TRANSISTORS COMPLEMENTARY SILICON 60 V 115 W Vdc MARKING DIAGRAM TO-204AA (TO , 7 Adc Total Power Dissipation @ TC = 25°C Derate above 25°C PD 115 0.657 Watts W


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PDF 2N3055, MJ2955 2N3055/D MJ2955 300 watts amplifier circuit diagram MJ2955 2n3055 200 watts amplifier MJ2955 2n3055 200 watts amplifier diagram MJ2955 300 watts amplifier 2N3055 power amplifier circuit 2N3055 2n3055 application note 2n3055 circuit diagram 2N3055 power amplifier circuit diagram MJ2955 TRANSISTOR
2001 - 2N3055 power amplifier circuit

Abstract: 2n3055 2n3055 application 2N3055 MEXICO MJ2955 2N3055 MJ2955 2N3055 typical applications 2n3055 circuit 2N3055 JAPAN pin out TRANSISTOR 2n3055
Text: Region Safe Operating Area http://onsemi.com 3 2N3055 MJ2955 NPN 2N3055 500 300 200 hFE , DC , Complementary Silicon Power Transistors . . . designed for general­purpose switching and amplifier applications. 2N3055 * PNP MJ2955 * *ON Semiconductor Preferred Device NPN · DC Current Gain - hFE = , Dissipation @ TC = 25_C Derate above 25_C PD 115 0.657 Watts W/_C _C Operating and Storage Junction Temperature Range TJ, Tstg ­65 to +200 15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS 115 WATTS


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PDF 2N3055 MJ2955 r14525 2N3055/D 2N3055 power amplifier circuit 2n3055 2n3055 application 2N3055 MEXICO MJ2955 2N3055 MJ2955 2N3055 typical applications 2n3055 circuit 2N3055 JAPAN pin out TRANSISTOR 2n3055
2005 - 2n3055

Abstract: 2N3055G 2n3055 circuit diagram MJ2955 300 watts amplifier circuit diagram 2N3055 power amplifier circuit diagram 2n3055 application note MJ2955 2n3055 200 watts amplifier 2N3055 power circuit MJ2955 MJ2955 300 watts amplifier
Text: 2N3055(NPN), MJ2955 (PNP) Preferred Device Complementary Silicon Power Transistors Complementary silicon power transistors are designed for general-purpose switching and amplifier applications , Saturation Voltage - · · 15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS, 115 WATTS VCE , Temperature Range MARKING DIAGRAM Maximum ratings are those values beyond which device damage can occur , DISSIPATION ( WATTS ) 160 140 xxxx55 120 G A YY WW MEX 100 80 = Device Code xxxx = 2N30


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PDF 2N3055 MJ2955 2N3055/D 2N3055G 2n3055 circuit diagram MJ2955 300 watts amplifier circuit diagram 2N3055 power amplifier circuit diagram 2n3055 application note MJ2955 2n3055 200 watts amplifier 2N3055 power circuit MJ2955 300 watts amplifier
2001 - 2N3055 power circuit

Abstract: 2N3055 power amplifier circuit 2N3055 typical applications 2N3055 2N3055 MJ2955 DC variable power with 2n3055 2n3055 equal 2n3055 circuit 2N3055 JAPAN mj2955
Text: general­purpose switching and amplifier applications. 2N3055 * PNP MJ2955 * *ON Semiconductor Preferred Device , : Pulse Width v 300 µs, Duty Cycle v 2.0%. http://onsemi.com 2 2N3055 MJ2955 20 IC, COLLECTOR , http://onsemi.com 3 2N3055 MJ2955 NPN 2N3055 500 300 200 hFE , DC CURRENT GAIN 100 70 50 30 20 , Watts W/_C _C Operating and Storage Junction Temperature Range TJ, Tstg ­65 to +200 15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS 115 WATTS CASE 1­07 TO­204AA (TO­3) THERMAL CHARACTERISTICS


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PDF 2N3055 MJ2955 r14525 2N3055/D 2N3055 power circuit 2N3055 power amplifier circuit 2N3055 typical applications 2N3055 2N3055 MJ2955 DC variable power with 2n3055 2n3055 equal 2n3055 circuit 2N3055 JAPAN mj2955
1995 - 2N3055

Abstract: 2n3055 motorola 2N3055 power amplifier circuit 2N3055 power circuit 2N3055-D pin out TRANSISTOR 2n3055 2N3055 NPN MOTOROLA POWER TRANSISTOR 2n3055 pnp 2n3055 circuit 2n3055 application
Text: Registration. (2N3055) (1) Pulse Test: Pulse Width 300 µs, Duty Cycle v v 2.0%. 2N3055, MJ2955 20 , 2N3055 MJ2955 NPN 2N3055 PNP MJ2955 500 200 300 VCE = 4.0 V TJ = 150°C VCE = 4.0 , * PNP MJ2955 * Complementary Silicon Power Transistors . . . designed for general­purpose switching and amplifier applications. *Motorola Preferred Device · DC Current Gain - hFE = 20 ­ 70 @ , Excellent Safe Operating Area 15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS 115 WATTS


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PDF 2N3055/D 2N3055 MJ2955 2N3055/D* 2N3055 2n3055 motorola 2N3055 power amplifier circuit 2N3055 power circuit 2N3055-D pin out TRANSISTOR 2n3055 2N3055 NPN MOTOROLA POWER TRANSISTOR 2n3055 pnp 2n3055 circuit 2n3055 application
2005 - 2n3055 application note

Abstract: 2N3055 power amplifier circuit diagram 2n3055 circuit diagram 2n3055 pin out diagram pin out TRANSISTOR 2n3055 2N3055 typical applications 2n3055 2N3055 power amplifier circuit 2n3055 circuit 2N3055 power circuit
Text: Area http://onsemi.com 2 2N3055(NPN), MJ2955 (PNP) 500 300 hFE , DC CURRENT GAIN 200 100 70 50 , 2N3055(NPN), MJ2955 (PNP) Preferred Device Complementary Silicon Power Transistors . . . designed for general-purpose switching and amplifier applications. · DC Current Gain - hFE = 20-70 @ IC , COMPLEMENTARY SILICON 60 V 115 W MARKING DIAGRAM TO-204AA (TO-3) CASE 1-07 xxxx55 A YYWW THERMAL CHARACTERISTICS Characteristic Symbol RqJC Max Unit xxxx55 = Device Code xxxx= 2N3055 or MJ2955 A =


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PDF 2N3055 MJ2955 2N3055/D 2n3055 application note 2N3055 power amplifier circuit diagram 2n3055 circuit diagram 2n3055 pin out diagram pin out TRANSISTOR 2n3055 2N3055 typical applications 2N3055 power amplifier circuit 2n3055 circuit 2N3055 power circuit
1995 - 2N3055 MOTOROLA

Abstract: 2N3055 power amplifier circuit MJ2955 300 watts amplifier MJ2955 2n3055 200 watts amplifier 2N3055 NPN MOTOROLA POWER TRANSISTOR 2N3055 pin out TRANSISTOR 2n3055 2N3055/MJ2955 power transistor 2n3055 2N3055 power circuit
Text: Registration. (2N3055) (1) Pulse Test: Pulse Width 300 µs, Duty Cycle v v 2.0%. 2N3055, MJ2955 20 , 2N3055 MJ2955 NPN 2N3055 PNP MJ2955 500 200 300 VCE = 4.0 V TJ = 150°C VCE = 4.0 , * PNP MJ2955 * Complementary Silicon Power Transistors . . . designed for general­purpose switching and amplifier applications. *Motorola Preferred Device · DC Current Gain - hFE = 20 ­ 70 @ , Excellent Safe Operating Area 15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS 115 WATTS


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PDF 2N3055/D 2N3055 MJ2955 2N3055/D* 2N3055 MOTOROLA 2N3055 power amplifier circuit MJ2955 300 watts amplifier MJ2955 2n3055 200 watts amplifier 2N3055 NPN MOTOROLA POWER TRANSISTOR 2N3055 pin out TRANSISTOR 2n3055 2N3055/MJ2955 power transistor 2n3055 2N3055 power circuit
2004 - 2N3055

Abstract: DC variable power with 2n3055 2N3055G power transistor 2n3055 2N3055 transistor 2n3055 amplifier data transistor 2n3055 2n3055h MJ2955 TRANSISTOR Mj2955 power transistor
Text: Area http://onsemi.com 36 2N3055, MJ2955 500 300 200 hFE , DC CURRENT GAIN 25°C 100 70 50 30 , 2N3055, MJ2955 Preferred Device Complementary Silicon Power Transistors . . . designed for general-purpose switching and amplifier applications. · DC Current Gain - hFE = 20 -70 @ IC = 4 Adc · , W MARKING DIAGRAM TO-204AA (TO-3) CASE 1-07 xxxx55 A YYWW THERMAL CHARACTERISTICS Characteristic Symbol RqJC Max Unit xxxx55 = Device Code xxxx= 2N3055 or MJ2955 A = Assembly Location


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PDF 2N3055, MJ2955 2N3055 2N3055 DC variable power with 2n3055 2N3055G power transistor 2n3055 2N3055 transistor 2n3055 amplifier data transistor 2n3055 2n3055h MJ2955 TRANSISTOR Mj2955 power transistor
2N3055G

Abstract: MJ2955 2n3055 200 watts amplifier diagram MJ2955G TO-204AA transistor OF transistor 2n3055 to-3 package MJ-20 power transistor mex MJ2955 data transistor 2n3055 2N3055
Text: 2N3055(NPN), MJ2955 (PNP) Preferred Device Complementary Silicon Power Transistors Complementary silicon power transistors are designed for general-purpose switching and amplifier applications , 15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS, 115 WATTS VCE(sat) = 1.1 Vdc (Max , Temperature Range MARKING DIAGRAM Maximum ratings are those values beyond which device damage can occur , DISSIPATION ( WATTS ) 160 140 xxxx55 120 G A YY WW MEX 100 80 = Device Code xxxx = 2N30


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PDF 2N3055 MJ2955 O-204AA 2N3055G MJ2955 2n3055 200 watts amplifier diagram MJ2955G TO-204AA transistor OF transistor 2n3055 to-3 package MJ-20 power transistor mex data transistor 2n3055
2004 - 2n3055 malaysia

Abstract: MJ2955 2n3055 200 watts amplifier DC variable power with 2n3055 2n3055 pnp MJ2955 300 watts amplifier 2n3055 IC 2N3055 curve 2N3055 MJ2955 TRANSISTOR 2n3055 collector characteristic curve
Text: 2N3055, MJ2955 Complementary Power Transistors Designed for use in general-purpose amplifier and , MJ2955 Dimensions Minimum Maximum A 38.75 39.96 B 19.28 22.23 C 7.96 9.28 D 11.18 12.19 60 Volts E 25.20 26.67 115 Watts F 0.92 1.09 G , 31/05/05 V1.0 2N3055, MJ2955 Complementary Power Transistors Thermal Characteristics , , Power Dissipation ( Watts ) Figure - 1 Power Derating TC, Temperature (°C) Electrical


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PDF 2N3055, MJ2955 400mA. 2N3055 2n3055 malaysia MJ2955 2n3055 200 watts amplifier DC variable power with 2n3055 2n3055 pnp MJ2955 300 watts amplifier 2n3055 IC 2N3055 curve 2N3055 MJ2955 TRANSISTOR 2n3055 collector characteristic curve
2004 - 2n3055 application note

Abstract: 2N3055 power amplifier circuit 2N3055 power amplifier circuit diagram 2N3055 power circuit 2n3055 circuit diagram MJ2955 2n3055 200 watts amplifier diagram MJ2955 300 watts amplifier circuit diagram DC variable power with 2n3055 MJ2955 2n3055 200 watts amplifier 2N3055
Text: Figure 2. Active Region Safe Operating Area http://onsemi.com 2 2N3055, MJ2955 500 200 300 , 2N3055, MJ2955 Preferred Device Complementary Silicon Power Transistors . . . designed for general-purpose switching and amplifier applications. · DC Current Gain - hFE = 20 -70 @ IC = 4 Adc · , DIAGRAM °C/W Operating and Storage Junction Temperature Range xxxx55 = Device Code xxxx= 2N3055 or MJ2955 A = Assembly Location YY = Year WW = Work Week x = 1, 2, or 3 THERMAL


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PDF 2N3055, MJ2955 2N3055/D 2n3055 application note 2N3055 power amplifier circuit 2N3055 power amplifier circuit diagram 2N3055 power circuit 2n3055 circuit diagram MJ2955 2n3055 200 watts amplifier diagram MJ2955 300 watts amplifier circuit diagram DC variable power with 2n3055 MJ2955 2n3055 200 watts amplifier 2N3055
2N3055 power amplifier circuit

Abstract: 2n3055 motorola 2N3055 NPN MOTOROLA POWER TRANSISTOR 2N3055-1 2N3055 typical applications 2N3055 power circuit 2n3055 circuit 2N3055 TRANSISTOR 2n3055 TRANSISTOR MJ2955
Text: Silicon Power Transistors . . . designed for general-purpose switching and amplifier applications. · · · , Temperature Range 15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS 115 WATTS Value 60 70 100 7 15 7 115 0.657 - 6 5 t o + 2 00 Symbol VCEO VCER VCB Veb Unit Vdc Vdc Vdc Vdc Adc Adc Watts W , 2N3055 MJ2955 ELECTRICAL CHARACTERISTICS (T q = 25°C unless otherwise noted) Characteristic *OFF , Registration. (2N3055) (1) Pulse Test: Pulse W idth < 300 ns, Duty Cycle < 2.0%. fT 2.5 - MHz hfe 15


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PDF 2N3055/D J2955 2N3055 power amplifier circuit 2n3055 motorola 2N3055 NPN MOTOROLA POWER TRANSISTOR 2N3055-1 2N3055 typical applications 2N3055 power circuit 2n3055 circuit 2N3055 TRANSISTOR 2n3055 TRANSISTOR MJ2955
1995 - Not Available

Abstract: No abstract text available
Text: MJ2955 NPN 2N3055 PNP MJ2955 500 200 300 VCE = 4.0 V TJ = 150°C VCE = 4.0 V hFE , 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) 175 200 PD, POWER DISSIPATION ( WATTS , _C Derate above 25_C PD 115 0.657 Watts W/_C TJ, Tstg – 65 to + 200 _C Symbol , €“204AA (TO–3) 15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS 115 WATTS MAXIMUM , Preferred Device . . . designed for general–purpose switching and amplifier applications


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PDF 2N3055/D* 2N3055/D
2n3055 motorola

Abstract: L 3055 motorola 2N3055 NPN MOTOROLA POWER TRANSISTOR motorola 2n3055 motorola power transistor 2N3055 pin out TRANSISTOR 2n3055 J 2N3055
Text: id th < 300 ills , D uty C y c le < 2.0% . 2N3055, MJ2955 There are two limitations on the , Silicon Pow er Transistors . . . designed for general-purpose switching and amplifier applications. · · · , 15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS 115 WATTS Value 60 70 100 7 15 7 115 0 , MJ2955 ELECTRICAL CHARACTERISTICS (T q = 25°C u n le ss o th e rw is e noted) Characteristic *OFF , 2N3055 MJ2955 NPN PNP hF E , D C CURRENT GAIN 1C , COLLECTOR CURRENT (AMP) 1C, COLLECTOR


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PDF by2N3055/D J2955 2N3055/D 2n3055 motorola L 3055 motorola 2N3055 NPN MOTOROLA POWER TRANSISTOR motorola 2n3055 motorola power transistor 2N3055 pin out TRANSISTOR 2n3055 J 2N3055
2008 - 2N3055

Abstract: 2n3055 malaysia MJ2955 2n3055 audio 2N3055 ST 2N3055 schematic diagram st 2n3055 2N3055 MJ2955 2N3055 JAPAN 2N3055/MJ2955
Text: schematic diagram Device summary Order code Marking 2N3055 2N3055 MJ2955 MJ2955 . , 2N3055 MJ2955 Complementary power transistors Features Low collector-emitter saturation , Amplifier 1 2 Description The devices are manufactured in epitaxial-base planar technology and are , MJ2955 Absolute maximun rating 1 Absolute maximun rating Table 2. Absolute maximum rating Symbol Parameter Value NPN 2N3055 PNP Unit MJ2955 VCBO Collector-emitter voltage


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PDF 2N3055 MJ2955 2N3055 2n3055 malaysia MJ2955 2n3055 audio 2N3055 ST 2N3055 schematic diagram st 2n3055 2N3055 MJ2955 2N3055 JAPAN 2N3055/MJ2955
2013 - 2n3055

Abstract: mj2955 ST 2n3055
Text: 2N3055, MJ2955 Complementary power transistors Datasheet - production data Features • Low , €¢ Audio amplifier 2 Pr e Description TO-3 Figure 1. du o • General purpose 1 , suitable for audio, power linear and switching applications. Internal schematic diagram )(s bs O , 2N3055 MJ2955 MJ2955 This is information on a product in full production. DocID4079 Rev 8 , 2N3055, MJ2955 Absolute maximum rating Table 2. Absolute maximum rating Value Symbol Parameter


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PDF 2N3055, MJ2955 2N3055 DocID4079 2n3055 mj2955 ST 2n3055
2013 - 2n3055 malaysia

Abstract: Mj2955
Text: purpose 1 • Audio amplifier 2 Description TO-3 Figure 1. Internal schematic diagram , 2N3055, MJ2955 Complementary power transistors Datasheet - production data Features • Low , 2N3055 2N3055 MJ2955 MJ2955 This is information on a product in full production. DocID4079 , rating 1 2N3055, MJ2955 Absolute maximum rating Table 2. Absolute maximum rating Value Symbol Parameter NPN 2N3055 PNP Unit MJ2955 VCBO Collector-base voltage (IE = 0) 100 V


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PDF 2N3055, MJ2955 2N3055 DocID4079 2n3055 malaysia Mj2955
2008 - PD115

Abstract: MJ2955 MJ2955 TRANSISTOR
Text: amplifier applications. Features: · · · · (TO-3) DC current gain - hFE = 20 - 70 at IC = 4A dc , Collector (Case) 15 Amperes Power Transistors Complementary Silicon 60 Volts, 115 Watts L 0.440 , reliability may be affected. PD, Power Dissipation ( Watts ) Power Derating TC, Case Temperature (°C , Within JEDEC Registration. ( MJ2955 ). 1. Pulse Test : Pulse Width = 300µs, Duty Cycle 2.0%. http , Description Part Number Transistor, PNP, TO-3 MJ2955 V, Voltage (Volts) Part Number Table IC


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PDF 18ade PD115 MJ2955 MJ2955 TRANSISTOR
1997 - IC 741 OPAMP

Abstract: 4558 opamp schematic 4558 opamp DC MOTOR 500W 16a 36v 759 Power Operational Amplifiers pin diagram of op-amp ic 741 OF IC 741 op-amp 3.3KW motor schematic 12v 3a power supply without transistor and ic 759 power op amp
Text: CIRCUIT CURRENT - mA 180pF 700 22k 600 10k 2.2k 50mF 500 400 300 200 100 -50 , amplifier output current (typically 16mA) is insufficient. 759 An operational amplifier with , ³ 50½, VOUT = ±10V 25 Peak Output Current 3V ²| VS - VOUT|< 10V ±325 Short Circuit Current |VS - VOUT| = 30V ±200 mA Risetime RL ³ 50½ 300 ns Overshoot RL ³ 50 , 1.0 2 5 10 POWER OUTPUT - W V+ VIN 25k + + Figure 6 Output short circuit


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PDF 325mA IC 741 OPAMP 4558 opamp schematic 4558 opamp DC MOTOR 500W 16a 36v 759 Power Operational Amplifiers pin diagram of op-amp ic 741 OF IC 741 op-amp 3.3KW motor schematic 12v 3a power supply without transistor and ic 759 power op amp
1995 - 2n3055 motorola

Abstract: motorola MJ3000 transistor mj3001 mj3000 npn darlington transistor 150 watts MJ3000 circuit MJ2500 2N3055A 2n3055 MJ2501 MJ3000 equivalent
Text: Circuit Schematic EMITTER [ 2.0 k [ 50 BASE PNP MJ2500 MJ2501 EMITTER [ 2.0 k [ 50 BASE , 0.857 Watts W/_C TJ, Tstg ­ 55 to + 200 _C Characteristic Symbol Max Unit , 10 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 60 ­ 80 VOLTS 150 WATTS Unit , amplifier applications. MJ2501* · High DC Current Gain - hFE = 4000 (Typ) @ IC = 5.0 Adc · , ) MJ2955A MJ2955 (See 2N3055) SEMICONDUCTOR TECHNICAL DATA Order this document by MJ2500/D


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PDF MJ2500 MJ2501 MJ3000 MJ3001 MJ2500/D* MJ2500/D 2n3055 motorola motorola MJ3000 transistor mj3001 mj3000 npn darlington transistor 150 watts MJ3000 circuit MJ2500 2N3055A 2n3055 MJ2501 MJ3000 equivalent
1999 - 2N3055

Abstract: 2n3055 malaysia pnp transistor 2N3055 MJ2955 TRANSISTOR 2N3055 MEXICO 2N3055 JAPAN 2N3055 series voltage regulator MJ2955 MJ2955 mexico 2n3055 circuit diagram
Text: MJ2955 . 1 2 TO-3 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter , 2N3055 MJ2955 ® COMPLEMENTARY SILICON POWER TRANSISTORS s s STMicroelectronics , Temperature Max. Operating Junction Temperature 2N3055 PNP Unit MJ2955 100 V 70 V 60 , types voltage and current values are negative. August 1999 1/4 2N3055 / MJ2955 THERMAL DATA , Collector Current V CE = 40 V 2.87 A Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % For PNP


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PDF 2N3055 MJ2955 2N3055 MJ2955. 2n3055 malaysia pnp transistor 2N3055 MJ2955 TRANSISTOR 2N3055 MEXICO 2N3055 JAPAN 2N3055 series voltage regulator MJ2955 MJ2955 mexico 2n3055 circuit diagram
1998 - 2N3055

Abstract: 2n3055 malaysia MJ2955 2N3055 JAPAN 2N3055 specification MJ2955 TRANSISTOR pnp transistor 2N3055 st 2n3055 2N3055 MEXICO 2N3055 schematic diagram
Text: 2N3055 MJ2955 ® COMPLEMENTARY SILICON POWER TRANSISTORS s s ST PREFERRED SALESTYPES , and high fidelity amplifiers. The complementary PNP type is MJ2955 . 1 2 TO-3 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value NPN V CBO Collector-Base Voltage (I E = 0) 2N3055 PNP Unit MJ2955 100 V V CER Collector-Emitter Voltage (R BE , current values are negative. August 1998 1/4 2N3055 / MJ2955 THERMAL DATA R thj-case


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PDF 2N3055 MJ2955 2N3055 MJ2955. 2n3055 malaysia MJ2955 2N3055 JAPAN 2N3055 specification MJ2955 TRANSISTOR pnp transistor 2N3055 st 2n3055 2N3055 MEXICO 2N3055 schematic diagram
1997 - MJ2955 TRANSISTOR

Abstract: mj2955 TO-3 Transistor MJ2955 MJ2955 Mj2955 power transistor
Text: Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % 2/4 20 5 4 70 MHz MJ2955 TO , MJ2955 SILICON PNP SWITCHING TRANSISTOR s s SGS-THOMSON PREFERRED SALESTYPE PNP TRANSISTOR DESCRIPTION The MJ2955 is a silicon epitaxial-base planar PNP transistors in TO-3 metal case, intented for , -3 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter V CBO Collector-Base , Temperature September 1997 150 W -65 to 200 o C 200 o C 1/4 MJ2955 THERMAL


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PDF MJ2955 MJ2955 MJ2955 TRANSISTOR mj2955 TO-3 Transistor MJ2955 Mj2955 power transistor
1999 - 2N3055

Abstract: MJ2955 TRANSISTOR MJ2955 2N3055 MEXICO pnp transistor 2N3055 t 2N3055 2N3055 MJ2955 Transistor MJ2955 2N3055 JAPAN MJ2955 mexico
Text: MJ2955 . 1 2 TO-3 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symb ol Parameter , 2N3055 MJ2955 ® COMPLEMENTARY SILICON POWER TRANSISTORS s s STMicroelectronics , MJ2955 100 V Collector-Emitter Voltage (R BE 100) Collector-Emitter Voltage (I B = 0) 70 V , types voltage and current values are negative. August 1999 1/4 2N3055 / MJ2955 THERMAL DATA , Collector Current V CE = 40 V 2.87 A fT Is /b Pulsed: Pulse duration = 300 µs, duty cycle


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PDF 2N3055 MJ2955 2N3055 MJ2955. MJ2955 TRANSISTOR MJ2955 2N3055 MEXICO pnp transistor 2N3055 t 2N3055 2N3055 MJ2955 Transistor MJ2955 2N3055 JAPAN MJ2955 mexico
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