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  You can filter table by choosing multiple options from dropdownShowing 6 results of 6
Part Manufacturer Supplier Stock Best Price Price Each Buy Part
MJ10021 NTE Electronics Inc Newark element14 57 $14.20 $12.25
MJ10021 SPC Multicomp Newark element14 106 $7.63 $3.94
MJ10021 NTE Electronics Inc Allied Electronics & Automation - $10.80 $10.80
MJ10021 SPC Multicomp element14 Asia-Pacific 2,406 $10.79 $7.12
MJ10021 NTE Electronics Inc Farnell element14 - £18.46 £15.93
MJ10021 SPC Multicomp Farnell element14 2,406 £14.32 £4.77

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MJ10021 datasheet (11)

Part Manufacturer Description Type PDF
MJ10021 Motorola 60 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 200 AND 250 VOLTS 250 WATTS Original PDF
MJ10021 On Semiconductor SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode Original PDF
MJ10021 Mospec POWER TRANSISTORS(60A,200-250V,250W) Scan PDF
MJ10021 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
MJ10021 Motorola Switchmode Datasheet Scan PDF
MJ10021 Motorola European Master Selection Guide 1986 Scan PDF
MJ10021 Others Shortform Transistor PDF Datasheet Scan PDF
MJ10021 Others Shortform Transistor PDF Datasheet Scan PDF
MJ10021 Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
MJ10021 Others Semiconductor Master Cross Reference Guide Scan PDF
MJ10021G On Semiconductor TRANS DARLINGTON NPN 250V 60A 3TO-204AE Original PDF

MJ10021 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
Not Available

Abstract: No abstract text available
Text: SPEEDUP DIODE NPN MJ10020 The MJ10020 and MJ10021 darlington transistors are designed for , particularly suited for line oper -ated switchmode applications such as: MJ10021 FEATURES: â , MAXIMUM RATINGS Symbol MJ10020 MJ10021 Unit Collector-Emitter Voltage VCEV 200 250 , , MJ10021 NPN ELECTRICAL CHARACTERISTICS ( Tc = 25°C unless otherwise noted ) Characteristic Symbol , Voltage ( lc = 100 mA»lB = 0 ) MJ10020 MJ10021 Collector Cutoff Current ( VCEV= Rated Value,VBE


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PDF MJ10020 MJ10020 MJ10021 MJ10021 MJ10020,
MJ10020

Abstract: MJ10021 mj1002
Text: SPEEDUP DIODE The MJ10020 and MJ10021 darlington transistors are designed for high-voltage, high-speed , MAXIMUM RATINGS NPN MJ10020 MJ10021 60 AMPERE POWER DARLINGTON TRANSISTORS 200-250 VOLTS 250 WATTS Characteristic Symbol MJ10020 MJ10021 Unit Collector-Emitter Voltage vCEV 200 250 V Collector-Emitter Voltage , , MJ10021 NPN ELECTRICAL CHARACTERISTICS ( Tc = 25°C unless otherwise noted ) Characteristic Symbol Min , ) MJ10020 MJ10021 VCEO(SU3) 200 250 V Collector Cutoff Current (VCEV= Rated Value,VBEjQFFj=1.5 V ) (VCEV


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PDF MJ10020 MJ10021 MJ10021 MJ10020 mj1002
3020 transistor

Abstract: b1 100c UD
Text: Sheet MJ10020 MJ10021 60 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 200 AND 250 VOLTS 250 WATTS , MJ10021 Darlington transistors are designed for high-voltage, high-speed, power switching in inductive , 1.43 MJ10021 250 350 Unit Vdc Vdc Vdc Ade Ade Watts W /°C °C T j, TSfg - 6 5 t o + , facilitate "w orst ca se " design. >M otorola, Inc. 1995 fM) MOTOROLA MJ10020 MJ10021 ELECTRICAL , ) 'CER M J10020 MJ10021 V cE O (su s) 200 250 - - Vdc Symbol Min Typ Max Unit ICEV -


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PDF MJ10020/D MJ10020 MJ10021 MJ10021 97A-05 O-204AE 3020 transistor b1 100c UD
1995 - 1N4937

Abstract: MJ10020 MJ10021
Text: and Storage Junction Temperature Range W/_C Symbol MJ10020 MJ10021 Unit , Leakage Currents 100 15 CASE 197A­05 TO­204AE (TO­3) · · · · · The MJ10020 and MJ10021 , Diode Designer's MJ10020 MJ10021 SEMICONDUCTOR TECHNICAL DATA Order this document by MJ10020 , Sustaining Voltage (Table 1) (IC = 100 mA, IB = 0) MJ10020 MJ10021 Min Typ Max Unit VCEO , MJ10021 MJ10020 MJ10021 hFE, DC CURRENT GAIN 1000 700 500 VCE , COLLECTOR­EMITTER VOLTAGE


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PDF MJ10020/D* MJ10020/D 1N4937 MJ10020 MJ10021
2001 - MJ10021 equivalent

Abstract: SUS CIRCUIT 1N4937 MJ10020 MJ10021 tektronix 475
Text: ON Semiconductort MJ10020 MJ10021 SWITCHMODEt Series NPN Silicon Power Darlington , 250 VOLTS 250 WATTS The MJ10020 and MJ10021 Darlington transistors are designed for high­voltage , Rating Symbol MJ10020 MJ10021 Unit Collector­Emitter Voltage VCEO 200 250 Vdc , , IC = 0) IEBO - - 175 mAdc Symbol MJ10020 MJ10021 Typ Max Unit , Characteristic ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) MJ10020 MJ10021 MJ10020


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PDF MJ10020 MJ10021 MJ10020 MJ10021 r14525 MJ10020/D MJ10021 equivalent SUS CIRCUIT 1N4937 tektronix 475
2004 - mj10021

Abstract: ob 2268 60 amp npn darlington power transistors MJ1002
Text: MJ10021 Darlington Power Transistor NPN silicon power darlington transistors with Base-Emitter , ) 38.75 B 2. Emitter Maximum A Pin 1. Base Minimum 10.67 11.18 MJ10021 60 , Characteristic Symbol MJ10021 Collector-Emitter Voltage VCEV 250 Collector-Emitter Voltage , Storage Junction Temperature Range Page 1 Unit V A 05/10/05 V1.1 MJ10021 Darlington , Characteristics Output Capacitance (VCB = 10V, IE = 0, f = 1.0kHz) Page 2 pF 05/10/05 V1.1 MJ10021


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PDF MJ10021 mj10021 ob 2268 60 amp npn darlington power transistors MJ1002
1995 - 1N4937

Abstract: MJ10020 MJ10021 AN222A
Text: and Storage Junction Temperature Range W/_C Symbol MJ10020 MJ10021 Unit , Leakage Currents 100 15 CASE 197A­05 TO­204AE (TO­3) · · · · · The MJ10020 and MJ10021 , Diode Designer's MJ10020 MJ10021 SEMICONDUCTOR TECHNICAL DATA Order this document by MJ10020 , Sustaining Voltage (Table 1) (IC = 100 mA, IB = 0) MJ10020 MJ10021 Min Typ Max Unit VCEO , MJ10021 MJ10020 MJ10021 hFE, DC CURRENT GAIN 1000 700 500 VCE , COLLECTOR­EMITTER VOLTAGE


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PDF 204AE 1N4937 MJ10020 MJ10021 AN222A
2008 - tnpn

Abstract: Darlington 30A reliance dc motor MJ10021
Text: 1165905 T-NPN, Si, darlington with base-emitter speedup diode. Features: · Continuous collector current-IC = 60A. Applications: Switching regulators. Inverters. Solenoid and relay drivers. AC and DC motor controls. Description: TO-3 The MJ10021 is a darlington transistor in a TO-3 type package designed for high-voltage, high-speed, power switching in inductive circuits where fall , , TO-3 MJ10021 Disclaimer This data sheet and its contents (the "Information") belong to the


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PDF MJ10021 tnpn Darlington 30A reliance dc motor
mj power transistor speedup diode

Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ10020 D esigner's TM Data Sheet MJ10021 60 AMPERE , Power Darlington Transistors with Base-Emitter Speedup Diode The MJ10020 and MJ10021 Darlington , 200 300 8.0 60 100 20 30 250 143 1.43 CASE 187A-05 TO-2Q4AE (TO-3) MJ10021 250 350 Unit Vdc , Max Unit MJ 10020 MJ10021 v CEO(sus) 'CEV 200 250 - - Vdc mAdc 'CER 'EBO , Power Transistor Device Data 3-467 M J1 0 0 2 0 MJ10021 TYPICAL ELECTRICAL CHARACTERISTICS hpg


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PDF MJ10020 MJ10021 MJ10020 MJ10021 10biased mj power transistor speedup diode
Not Available

Abstract: No abstract text available
Text: / MJ10021 n ·B" iJ f -c§=r .270" (6.86mm) B" BASE BONDING AREA: A p p ro . 0.05 x 0.07" (13 x


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PDF CCC10021 emitter-25-mil thickness-18 PTC10020/M PTC10021/MJ10021 300ns,
2006 - Darlington NPN 250W

Abstract: MJ10021
Text: MJ10021 T-NPN, Si, Darlington w/Base-Emitter Speedup Diode Description: The MJ10021 is a Darlington transistor in a TO3 type package designed for high-voltage, high- speed, power switching in inductive circuits where fall time is critical. This device is particularly suited for line operated switchmode applications. Features: D Continuous Collector Current - IC = 60A Applications: D Switching Regulators D Inverters D Solenoid and Relay Drivers D AC and DC Motor Controls Absolute Maximum Ratings


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PDF MJ10021 MJ10021 Darlington NPN 250W
2001 - CASE 221A Style 1

Abstract: BU108 MJE520 equivalent Darlington NPN Silicon Diode BU326 2N3055 BU100 BD907 equivalent 2SC144 2N555
Text: Darlington Transistors with Base-Emitter Speedup Diode Designer's MJ10020 MJ10021 60 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 200 AND 250 VOLTS 250 WATTS The MJ10020 and MJ10021 Darlington , ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ Rating Symbol VCEO VCEV VEB IC ICM IB IBM PD MJ10020 200 300 MJ10021 250 350 Unit Vdc Vdc , ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ v MJ10020 MJ10021 Max Unit ELECTRICAL CHARACTERISTICS (TC = 25 , Sustaining Voltage (Table 1) (IC = 100 mA, IB = 0) MJ10020 MJ10021 VCEO(sus) ICEV 200 250 - -


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PDF MJ10020 MJ10021 MJ10021 Performa32 TIP73B TIP74 TIP74A TIP74B TIP75 CASE 221A Style 1 BU108 MJE520 equivalent Darlington NPN Silicon Diode BU326 2N3055 BU100 BD907 equivalent 2SC144 2N555
tektronix type 576 curve tracer

Abstract: tektronix 576 curve tracer Tracer 176 MR756 AN915 line frequency diode AN915 MOTOROLA DIODO 4001 real time application of ASTABLE mode 2n4401 die
Text: MJ10005 NPN 20 10 7.5 8.0 5.6 0.25 100 25 MJ10007 NPN 10 5.0 6.3 62 48 0.28 30 11 MJ10021 NPN 60 30 18 , Diodas 100r MJ10021 * 0 1.0 2.0 3.0 40 5.0 6.0 7.0 VF, C-E DIODE FORWARD VOLTAGE (VOLTS) FIGURE 11B â


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PDF AN915 AN915/D AN915/D tektronix type 576 curve tracer tektronix 576 curve tracer Tracer 176 MR756 AN915 line frequency diode AN915 MOTOROLA DIODO 4001 real time application of ASTABLE mode 2n4401 die
MJE340 MOTOROLA

Abstract: MCR265-006 MC79L12ACP MOC223-M mjl21194 MC79L05ACP mlt04g mje172 analog mcr100-6 307 Motorola MJ15022
Text: MMSZ5231BT1 0.11 ONS 849 MPS751 0.29 ONS 844 MJ10021 6.77 ONS — MJL3281A 2.92 ONS 846 MMSZ5232B 0.12 GIS 812


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PDF MC78T05CT MJD112 MMBT4401 MOC30ALT1 MOC205-M MPSW01A MJ16012 MMBT2907A MOC207-M MPSW06 MJE340 MOTOROLA MCR265-006 MC79L12ACP MOC223-M mjl21194 MC79L05ACP mlt04g mje172 analog mcr100-6 307 Motorola MJ15022
2002 - MJ10100

Abstract: all transistor transistor Common Base configuration transistor AN875 on semiconductor AN875 K.S. Terminals USE OF TRANSISTOR MJ10021 fastest finger first
Text: °C v TJ v 100°C 70 60 Turn-Of f Load Line Boundary for MJ10021 50 VBE(off)= 5.0 V 40 , , COLLECTOR-EMITTER VOLTAGE (V) Definition Figure 6. RBSOA Curve ( MJ10021 ) Reverse bias safe operating area


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PDF AN875/D r14525 MJ10100 all transistor transistor Common Base configuration transistor AN875 on semiconductor AN875 K.S. Terminals USE OF TRANSISTOR MJ10021 fastest finger first
transistor buv18a

Abstract: motorola transistor cross reference BUV18A BUX98A motorola N6030 BUT13 transistor buv10 MPSU06 transistor MJ12005 MOTOROLA MJ15021 "cross reference"
Text: » MJ14002» MJ10020»## MJ10021 *##[c] BUS50* BUV18A* MJ14001* MJ14003* MJ11031*## 2N6378. 2N6379* MJ11033


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PDF MPSU10 MPSU02 MPSU03 MPSU04 MPSU01 MPSU01A MPSU45# MPSU60 MPSU52 MPSU51 transistor buv18a motorola transistor cross reference BUV18A BUX98A motorola N6030 BUT13 transistor buv10 MPSU06 transistor MJ12005 MOTOROLA MJ15021 "cross reference"
tip1012

Abstract: 2N3055-3 MJ15024 MJ15025 2n3055 MJ15003 mj150* darlington mJE2003
Text: ) Min. @ 25°C MJ10021 2,7 — 60.0 250 75 Min. 15.00 3.50 0.500 30.0 — 250.0 Max. Max. 1 lhfel @ MHz


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PDF O-220 221D-02) 340G-01) MJF122 MJF127 MJL3281A MJ14002 MJ14003 MJ10021 MJW16018 tip1012 2N3055-3 MJ15024 MJ15025 2n3055 MJ15003 mj150* darlington mJE2003
mpsu57 cross

Abstract: No abstract text available
Text: MJ10020*## 75 min 15 3.5 0.5 30 250 250 MJ10021 *##[cl 75 min 15 3.5


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PDF MPSU10 MPSU02 MPSU60 MPSU52 MPSU03 MPSU04 MPSU01 MPSU51 MPSU01A MPSU51A mpsu57 cross
MJ10100

Abstract: AN-875 W. Schultz mj1010 MJ10021
Text: ) FIGURE 6- RBSOA Curve ( MJ10021 ) Time The variables associated with an RBSOA curve are peak


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PDF AN-875 AN875/D MJ10100 AN-875 W. Schultz mj1010 MJ10021
MJ1005

Abstract: MD5000A 2N3052 MJ12010 MD7000 MJ10011 IXTP2N100A MJ11017 IXTP4N90A MJ12007
Text: No file text available


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PDF IXTM3N100A O-204AA/TO-3 IXTM3N70A IXTM3N70 O-204AA/TO-3: MJ13081 MJ13091 MJ1005 MD5000A 2N3052 MJ12010 MD7000 MJ10011 IXTP2N100A MJ11017 IXTP4N90A MJ12007
MJ10100

Abstract: AR-109 AR109/D
Text: 60 c c 2 50 c _ > U J ij o * 40 30 20 TUR N-OFF LC)AD LINI BOUNDARY FOR MJ10021 THF i nrns FfiR M , ( MJ10021 ) 5A.11-5 b e h a v i o r is caused b y a strong d e p e n d e n c y of R B S O A u pon coll e


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PDF AR109/D 1PHX15069-2 MJ10100 AR-109 AR109/D
MJ10100

Abstract: MJ1002 RBSOA mj1010 AN-861 MJ10021
Text: ( MJ10021 ) Temperature Derating The analogy between forward and reverse bias safe operating area breaks


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PDF AN-861 AN861/D AN861/D MJ10100 MJ1002 RBSOA mj1010 AN-861 MJ10021
1996 - power transistors cross reference

Abstract: motorola AN485 transistor master replacement guide buv18a mj150* darlington motorola bipolar transistor GUIDE electronic ballast with MJE13003 BUV488 mje15033 replacement bd135 TRANSISTOR REPLACEMENT GUIDE
Text: ) MJ10021 (2)(16) 75 min 15 3.5 0.5 30 250 125 BUS50 (16) 15 min 50 1.5


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PDF MJW16212 225AA) MJE13003 BUH51 power transistors cross reference motorola AN485 transistor master replacement guide buv18a mj150* darlington motorola bipolar transistor GUIDE electronic ballast with MJE13003 BUV488 mje15033 replacement bd135 TRANSISTOR REPLACEMENT GUIDE
2001 - pin configuration transistor bd140

Abstract: 2SD669 equivalent BUV44 bd140 equivalent transistor MJE15020 bd140 equivalent BD250C EQUIVALENT RCA122 2N6045 NPN POWER DARLINGTON TRANSISTOR BD 136
Text: 15 min 10 min MJ14002 (16) MJ10020 (2)(16) MJ14003 (16) MJ10021 (2)(16) BUS50 (16) BUV18A


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PDF BD136 BD138 BD140 BD140-10 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A pin configuration transistor bd140 2SD669 equivalent BUV44 bd140 equivalent transistor MJE15020 bd140 equivalent BD250C EQUIVALENT RCA122 2N6045 NPN POWER DARLINGTON TRANSISTOR BD 136
2001 - IR642

Abstract: 2N6410 2SC931 2SD375 IR3001 BU108 bu180 BD241 2SD675 2SC1986
Text: ) MJ10020 (2)(16) MJ14003 (16) MJ10021 (2)(16) BUS50 (16) BUV18A (16) 70 80 125 100 (1)|h | @


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PDF BD787, BD788 BD787 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A IR642 2N6410 2SC931 2SD375 IR3001 BU108 bu180 BD241 2SD675 2SC1986
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