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Part ECAD Model Manufacturer Description Datasheet Download Buy Part
86094648124785V1LF 86094648124785V1LF ECAD Model Amphenol Communications Solutions DIN Headers & Receptacles, Backplane Connector, Standard Receptacle, Vertical, Through Hole, Style C, 64 ways, Mil - Class
86093968114785V1LF 86093968114785V1LF ECAD Model Amphenol Communications Solutions DIN Headers & Receptacles, Backplane Connector, Standard Receptacle, Vertical, Through Hole, Style C, 96 ways, Mil - Class
86093968109785E1LF 86093968109785E1LF ECAD Model Amphenol Communications Solutions DIN Headers & Receptacles, Backplane Connector, Standard Receptacle, Vertical, Solder-Eyelet, Style C, 96 ways, Mil - Class
86093488314785V1LF 86093488314785V1LF ECAD Model Amphenol Communications Solutions DIN Headers & Receptacles, Backplane Connector, Standard Receptacle, Vertical, Through Hole, Style C/2, 48 ways, Mil - Class
86093488324785V1LF 86093488324785V1LF ECAD Model Amphenol Communications Solutions DIN Headers & Receptacles, Backplane Connector, Standard Receptacle, Vertical, Through Hole, Style C/2, 48 ways, Mil - Class
86094328109788E1LF 86094328109788E1LF ECAD Model Amphenol Communications Solutions DIN Headers & receptacles, Backplane Connectors, DIN Standard Receptacle, Vertical, Solder-Eyelet, Style C, 32 ways, Mil - Class.

MIL-STD-750, Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
MIL-STD-750

Abstract: MIL-STD-750 2072
Text: = 25°C for BVDSS, VGSlh, IDSS, IGSS, VSD, RDSon 100% Visual Inspection i.a.w. method 2072 of MIL-STD- 750 , ) i.a.w. method 5001 of MIL-STD- 750 , including SEM Unclamped Inductive Switching (IAS) i.a.w. method 3470 of MIL-STD- 750 at VGSpcak= 15 V, L= 100|xH, IAS= 132 A Gate Stress Test for 250 |is at VGS= 30 Vdc. Safe Operating Area i.a.w. m ethod 3474 of MIL-STD- 750 at VDS= 160 V, ID= 2.8 A for 10 ms High Temperature Gate Bias i.a.w. method 1042 cond.B of MIL-STD- 750 : 48 hrs at T ambicnt= 150°C, Drain shorted to


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PDF MX043J MX043G FSC260R 1012RAD MX043J) MX043G) 1042B MIL-STD-750 MIL-STD-750 MIL-STD-750 2072
Not Available

Abstract: No abstract text available
Text: €¢ 1 Visual Inspection MIL-STD- 750 – Method 2073 2 Pre-Cap Inspection MIL-STD- 750 – Method 2070 • • 3 High-Temperature Bake MIL-STD- 750 – Method 1032 t = 340 Hrs. • • • 4 Temperature Cycling MIL-STD- 750 – Method 1051 20 Cycles. Condition C • • • 5 Thermal Impedance MIL-STD- 750 – Method 3101 • • • 6 Constant Acceleration MIL-STD- 750 – Method 2006 20,000Gs Min., Y1 Axis Only • â


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PDF BRO383-11B
Not Available

Abstract: No abstract text available
Text: o f MIL-STD- 750 DIE ELEMENT EVALUATION a. b. Wafer Lot Evaluation Testing (WLAT) i.a.w. method 5001 of MIL-STD- 750 , including SEM Unclamped Inductive Switching (IA i.a.w. method 3470 o f MIL-STD- 750 at VGSpeak= 15 V, L= 100|xH, IA 132 A S) S= C. Gate Stress Test for 250 |^s at VGS= 30 Vdc. d. Safe Operating Area i.a.w. method 3474 o f MIL-STD- 750 at VDS= 160 V, ID= 2.8 A for 10 ms e. High Temperature Gate Bias i.a.w. method 1042 cond.B o f MIL-STD- 750 : 48 hrs at T am bient= 150Â


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PDF MX043J MX043G FSC260R MX043J) MIL-STD-750 1042B MIL-STD-750
1998 - MIL-STD-750 2072

Abstract: MIL-STD-750 MIL-STD-750 3470 FSC260R ID100 MX043G MX043J
Text: Inspection i.a.w. method 2072 of MIL-STD- 750 a. b. c. d. e. Wafer Lot Evaluation Testing (WLAT) i.a.w. method 5001 of MIL-STD- 750 , including SEM Unclamped Inductive Switching (IAS) i.a.w. method 3470 of MIL-STD- 750 at VGS peak= 15 V, L= 100µH, I AS= 132 A Gate Stress Test for 250 µs at VGS= 30 Vdc. Safe Operating Area i.a.w. method 3474 of MIL-STD- 750 at VDS= 160 V, ID= 2.8 A for 10 ms High Temperature Gate Bias i.a.w. method 1042 cond.B of MIL-STD- 750 : 48 hrs at T ambient= 150° Drain shorted to


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PDF MX043J MX043G FSC260R MX043J) MX043G) MIL-STD-750 1042B MIL-STD-750 MIL-STD-750 2072 MIL-STD-750 3470 ID100 MX043G MX043J
MIL-STD-750

Abstract: MIL-STD-750C
Text: -202 METHOD 208 MIL-STD- 750 METHOD 2036.3 MIL-STD- 750 METHOD 2036.3 1 SOLDERABILITY 230 ± 5 D C 5 , WITH COOL 168/1000HRS MIL-STD-750C METHOD 1027.1 MIL-STD- 750 METHOD 1038. A I MIL-STD- 750 METHOD , 125 °C FOR BRIDGE -55 °C 1 PULSE MIL-STD- 750 METHOD 4066.2 8 HIGH TEMPERATURE STORAGE LIFE LOW TEMPERATURE STORAGE LIFE 168/1000HRS MIL-STD- 750 METHOD 1031.4 I EC-68-2-1 TEST A: COLD 9 , /IOOOHRS MIL-STD- 750 METHOD 1021.1 M IL- S- 19500 APPENDIX C MIL-STD- 750 METHOD 1056.1 MIL-STD- 750


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PDF MIL-STD-202 MIL-STD-750 90-DEGREE 168/1000HRS MIL-STD-750C
2002 - Reliability

Abstract: No abstract text available
Text: inspection MIL-STD- 750 - Method 2073 X 2 High temperature bake MIL-STD- 750 - Method 1032 X 3 Temperature cycling MIL-STD- 750 - Method 1051 Condition C X 4 Constant acceleration MIL-STD- 750 - Method 2006 20,000G's min., Y1 axis only X 5 Initial electrical test , Interim electricals Read and record X 8 Burn-in Condition B, t = 96 hrs X MIL-STD- 750 - Method 1038 MIL-STD- 750 - Method 1038 9 Final electrical test Read and record X 10


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2002 - MIL-STD-750

Abstract: 4011 high temperature reverse bias
Text: (non-operating life/ stabilization bake MIL-STD- 750 ) Method 1032 48 hrs @ +175°C 2) Temperature Cycling MIL-STD- 750 Method 1051 Condition C 20 Cycles -65°C to +175°C 15 min. extremes No dwell , Leakage Current Method 1038 Condition A MIL-STD- 750 5) Final Electrical MIL-STD- 750 96 , . 1) High Temperature Life (non-operating life/ stabilization bake MIL-STD- 750 ) Method 1032 , VRWM MIL-STD- 750 5) Final Electrical MIL-STD- 750 Method 4011 Method 4016 Method 4021


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PDF MIL-PRF-19500 MIL-STD-750 MIL-STD-750 4011 high temperature reverse bias
2000 - ingot

Abstract: MIL-STD-750
Text: MIL-STD- 750 ) Method 1032 48 hrs @ +175°C 2) Temperature Cycling MIL-STD- 750 Method 1051 , Condition A MIL-STD- 750 5) Final Electrical MIL-STD- 750 96 hrs min. @ TA=150°C and min , Temperature Life (non-operating life/ stabilization bake MIL-STD- 750 ) Method 1032 24 hrs @ 125°C 2 , Leakage Current Method 1038 Condition A 24 hrs @ +125°C at 80% of VRWM MIL-STD- 750 5) Final Electrical MIL-STD- 750 Method 4011 Method 4016 Method 4021 Forward Voltage Drop Leakage Current


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PDF MIL-STD-750 ingot MIL-STD-750
MIL-STD-750

Abstract: CK6001 UPS835LE3 1038A UPS1040E3 plaskon thomas shear UPS840e3 SEC77 qualify
Text: HTRB (Life Test) MIL-STD- 750 , Method 1038A Ta = 125 deg C VR = 32 Vdc Duration = 1000 Hours , hours 77 Units 0 0% Completed Temperature Cycling MIL-STD- 750 , Method 1051 Temp , MIL-STD- 750 , Method 2006 Y1 Direction 15,000 G's Minimum 77 Units 0 0% Completed Variable Frequency Vibration MIL-STD- 750 , Method 2056 50 G's Minimum 100Hz to 2kHz 77 Units 0 0% Completed Mechanical Shock MIL-STD- 750 , Method 2016 Non-Operating , 1500 G


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PDF CK6001) MIL-STD-750, JESD22-A102-C MSC/PCN-0002 UPS340e3 UPS835Le3 UPS360e3 UPS840e3 MIL-STD-750 CK6001 UPS835LE3 1038A UPS1040E3 plaskon thomas shear UPS840e3 SEC77 qualify
TRANSISTOR BL s93

Abstract: K1007
Text: -ih .' fi rn 3 aS L O UIL-STD- 750 Exeluding Physical Dimensions) v . .·* i llethod 2071 or , i ® 1 Sub-Group 2 ¡Collector Cut-Off Current ML-STD- 750 Method 3041 I ; ·· or K1007/3 !7.2.5.I. , Current F ft 1HL-STD- 750 Method 3061 or K1007/3 7.2.6. ' w l -4 m 3D § Collectop-Baltter Saturation Voltage . . . ' IÜL-STD- 750 liethod 3071 or PC1007/3 7.3*3* \ I - 15 aA B Ic - 150 nA , Sub-Group 2 : Collector Cut-Off Current HIL-STD- 750 Method 3041 ! ' ! K1007/3 7.2.5.1« I Vgs » 3° volt


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2n7507

Abstract: IRF5NJ3315 BL 15 SMD
Text: INCH-POUND MIL-PRF-19500/ 750 17 October 2008 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR , Online database at http://assist.daps.dla.mil/. AMSC N/A FSC 5961 MIL-PRF-19500/ 750 1.4 , -19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD- 750 , been obtained. 2 MIL-PRF-19500/ 750 Dimensions Inches Ltr. BL BW CH LH LW1 LW2 LL1 , . Physical dimensions for SMD-0.5, TO-276AA (2N7507U3). 3 MIL-PRF-19500/ 750 3. REQUIREMENTS 3.1


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PDF MIL-PRF-19500/750 2N7507U3, MIL-PRF-19500. O-276AA 2N7507U3 IRF5NJ3315 2n7507 IRF5NJ3315 BL 15 SMD
2013 - 2N7423

Abstract: 2N7422 662F 2N7423U
Text: . DEPARTMENT OF DEFENSE STANDARDS MIL-STD- 750 - Test Methods for Semiconductor Devices. * (Copies of , copper tungsten. Lead finish shall be solderable as defined in MIL-PRF-19500, MIL-STD- 750 , and herein , MIL-STD- 750 that were used to qualify the device for inclusion into section 6 of the slash sheet , stress test (see 4.3.1) (3) Method 3470 of MIL-STD- 750 , EAS test (see 4.3.2) Method 3470 of MIL-STD- 750 , EAS test (see 4.3.2) (3) 3c Method 3161 of MIL-STD- 750 , thermal impedance (see 4.3.3


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PDF MIL-PRF-19500/662F MIL-PRF-19500/662E 2N7422, 2N7422U, 2N7423, 2N7423U, MIL-PRF-19500. 2N7423 2N7422 662F 2N7423U
1998 - MIL-STD-750

Abstract: 100C
Text: 7.2.2 12 METHODS PER MIL-STD- 750 UNLESS OTHERWISE SPECIFIED SUMMARY OF TEST RESULTS GROUP B , 12 0 0 12 0 0 METHODS PER MIL-STD- 750 UNLESS OTHERWISE SPECIFIED SUMMARY OF , Ton = Toff IF/Io = 2.0 Amps COMMENTS: Upr5ge~2 METHODS PER MIL-STD- 750 UNLESS OTHERWISE , COMMENTS: Upr5ge~2 0 METHODS PER MIL-STD- 750 UNLESS OTHERWISE SPECIFIED SUMMARY OF TEST RESULTS , Autoclave TA = 121C/15psi t=96 hrs COMMENTS: Upr5ge~2 7.2.8 METHODS PER MIL-STD- 750 UNLESS


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PDF 100nA 300nA 975mV 600nA MIL-STD-750 to-220 1000G 100C
2013 - 2N7464T2

Abstract: No abstract text available
Text: BSC 5.08 BSC LD .016 .021 0.41 0.53 LL .500 . 750 12.70 19.05 LU , Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD- 750 - Test , ) herein. 3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD- 750 , test conditions from section 5 of method 1080 of MIL-STD- 750 that were used to qualify the device for , level (1) (2) (3) Method 3470 of MIL-STD- 750 , EAS (see 4.3.1) (3) Gate stress test (see


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PDF MIL-PRF-19500/675E MIL-PRF-19500/675D 2N7463T2, 2N7464T2, 2N7463U5 2N7464U5 MIL-PRF-19500. 2N7464T2
2013 - Not Available

Abstract: No abstract text available
Text: . DEPARTMENT OF DEFENSE STANDARDS MIL-STD- 750 * - Test Methods for Semiconductor Devices. (Copies of , with MIL-STD- 750 , MIL-PRF-19500 and herein. Where a choice of finish is desired, it shall be specified , MIL-STD- 750 that were used to qualify the device for inclusion into section 6 of the slash sheet , ) Gate stress test (see 4.3.1) (3) Method 3470 of MIL-STD- 750 , EAS (see 4.3.2) Method 3470 of MIL-STD- 750 , EAS (see 4.3.2) (3) 3c Method 3161 of MIL-STD- 750 , thermal impedance, (see 4.3.3


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PDF MIL-PRF-19500/663F MIL-PRF-19500/663E 2N7431, 2N7432, 2N7433, MIL-PRF-19500.
2013 - 2N7470

Abstract: JANS 2N7470T1
Text: , General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD- 750 - Test Methods for , 3.4.1 Lead formation and finish. Lead finish shall be solderable in accordance with MIL-STD- 750 , MIL-PRF , ) (3) Method 3470 of MIL-STD- 750 , EAS (see 4.3.2) Method 3470 of MIL-STD- 750 , EAS (see 4.3.2) (3) 3c Method 3161 of MIL-STD- 750 , thermal impedance, (see 4.3.3) Method 3161 of MIL-STD- 750 , applicable 10 Method 1042 of MIL-STD- 750 , test condition B Method 1042 of MIL-STD- 750 , test


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PDF MIL-PRF-19500/698E MIL-PRF-19500/698D 2N7470T1 2N7471T1, MIL-PRF-19500. 2N7470 JANS 2N7470T1
2013 - Not Available

Abstract: No abstract text available
Text: dc IDM TJ and TSTG A(pk) °C 2N7431U 300 2.5 0.42 60 60 75.0 56.0 75.0 300 , 500 500 500 75.0 51.0 43.0 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in , . DEPARTMENT OF DEFENSE STANDARDS MIL-STD- 750 - Test Methods for Semiconductor Devices. * (Copies of , . Terminal finish shall be solderable as defined in MIL-PRF-19500, MIL-STD- 750 , and herein. Where a choice , conditions from section 5 of method 1080 of MIL-STD- 750 that were used to qualify the device for inclusion


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PDF MIL-PRF-19500/664D MIL-PRF-19500/664C 2N7431U, 2N7432U, 2N7433U, MIL-PRF-19500.
2009 - 2N6903 JANTX

Abstract: 2N6903
Text: -19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD- 750 , 9.40 LC .200 TP 5.08 TP LD .016 .021 0.41 0.53 8,9 LL .500 . 750 , accordance with MIL-PRF-19500, MIL-STD- 750 , and herein. Where a choice of lead finish is desired, it shall , ) (3) Method 3470 of MIL-STD- 750 , (see 4.3.2) optional Method 3470 of MIL-STD- 750 , (see 4.3.2) optional (3) 3c Method 3161 of MIL-STD- 750 , (see 4.3.3) Method 3161 of MIL-STD- 750 , (see 4.3.3


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PDF MIL-PRF-19500/570D MIL-PRF-19500/570C 2N6901 2N6903, MIL-PRF-19500. 2N6903 JANTX 2N6903
107D

Abstract: No abstract text available
Text: ) Relative Radiant Intensity 1.0 0.5 40 30 20 10 0 0 600 650 700 Wavelength 750 , PAGE : 4 VERSION : 1.0 RELIABILITY TEST Test Conditions Result MIL-STD- 750 :1026 MIL-STD , -12 Low Ta= -35 C - 5 C + Test time=1,000hrs Temperature Cycling MIL-STD-202:107D MIL-STD- 750 , Time=10 cycles Thermal Shock MIL-STD-202:107D MIL-STD- 750 :1051 MIL-STD-883:1011 85 C - 5 C ~ -35 C - 5 C + + 10min 10min Test Time=10 cycles Solder Resistance MIL-STD-202:201A MIL-STD- 750


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PDF BL-B5334M BL-B5334M 107D
LTPD15

Abstract: No abstract text available
Text: . Tempera lure Cycling Method 2072, Mil -STD-7!>0 1032, MIL-STD- 750 1051, MIL-STD- 750 Conditions In , +125°C 4. Constant Acceleration 5. Fine Leak t>. Gross Leak 2006, MIL-STD- 750 1071, MIL-STD- 750 1071, Mil .-ST D- 750 See individual product specs for conditions. Condition Ft, Leak Rate <5 x I0 ? , MIL-STD- 750 Method Conditions Sample Size Subgroup 1 Resistance lo Solvents Internal Visual and , , Classes A and B of MIL-STD-87157 Subgroup/Test MIL-STD- 750 Method Conditions Sample Size Subgroup 1


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PDF -D-87157 MIL-D-87157 MIL-STD-750 MIL-STD-750 D-750 340-hour LTPD15
2004 - JIS-C-7021

Abstract: MIL-STD-750
Text: Life Reference Standard Test Conditions PAGE: 4 VERSION:1.0 Result 0/10 MIL-STD- 750 :1026 Connect with a , Temperature Storage 0/10 0/10 0/10 Temperature Cycling MIL-STD-202:107D MIL-STD- 750 :1051 MIL-STD-883:1010 JIS C 7021 :A-4 Thermal Shock MIL-STD-202:107D MIL-STD- 750 :1051 Environmental MIL-STD-883:1011 Test Solder Resistance MIL-STD-202:201A MIL-STD- 750 :2031 JIS C 7021 :A-1 Solderability MIL-STD-202:208D MIL-STD- 750 :2026 MIL-STD-883:2003 JIS C 7021 :A-2 0/10 0/10 0/10 0/10 JUDGMENT CRITERIA OF


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PDF NUMBERBS-C404RI MIL-STD-202 MIL-STD-750 MIL-STD-883 JIS-C-7021
2N7509

Abstract: transistor 1020 2N7510 FSGJ264 FSGJ160
Text: -19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD- 750 , -19500, MIL-STD- 750 , and herein. Where a choice of lead finish is desired, it shall be specified in the , ) (3) Method 3470 of MIL-STD- 750 , (see 4.3.2) Method 3470 of MIL-STD- 750 , (see 4.3.2) (3) 3c Method 3161 of MIL-STD- 750 , (see 4.3.3) Method 3161 of MIL-STD- 750 , (see 4.3.3) 7 Optional , of table I herein 10 Method 1042 of MIL-STD- 750 , test condition B Method 1042 of MIL-STD- 750


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PDF MIL-PRF-19500/687B MIL-PRF-19500/687A 2N7509, 2N7510, 2N7511, MIL-PRF-19500. 2N7509 transistor 1020 2N7510 FSGJ264 FSGJ160
Krypton-85

Abstract: 2N1484 2N1486 2N1483 2N1485 2N1485 JANTX transistor 2n1485
Text: characteristics. hfe y VCE = 4. 0 Vdc ic = 750 mAdc vbe y VCE = 4. 0 Vdc ic = 750 mAdc VCE(sat) I.' ic = 750 , and Electrical Component Parts. MIL-STD- 750 - Test Methods for Semiconductor Devices. (Copies of , 4 of MIL-STD- 750 . 4.4.2 Time limit for end points. End point tests for qualification and quality , . TABLE I. Group A inspection MIL-STD- 750 LTPD Symbol Limits Examination or test Method Details , -19500/ 180D TABLE I. Group A inspection - Continued MIL-STD- 750 LTPD Symbol Limits Examination or test


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PDF MIL-S-19500/180D MIL-S-19500/180C 2N1483, TX2N1483, 2N1484, TX2N1484 2N1485, TX2N1485, 2N1486, TX2N1486 Krypton-85 2N1484 2N1486 2N1483 2N1485 2N1485 JANTX transistor 2n1485
2013 - 2N7380

Abstract: No abstract text available
Text: -19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD- 750 , finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD- 750 , and herein. Where a choice of , MIL-STD- 750 that were used to qualify the device for inclusion into section 6 of the slash sheet , ) Gate stress test (see 4.3.1) (3) Method 3470 of MIL-STD- 750 . (see 4.3.2) Method 3470 of MIL-STD- 750 . (see 4.3.2) (3) 3c Method 3161 of MIL-STD- 750 (see 4.3.3) Method 3161 of MIL-STD- 750


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PDF MIL-PRF-19500/614H MIL-PRF-19500/614G 2N7380 2N7381, MIL-PRF-19500.
2003 - Not Available

Abstract: No abstract text available
Text: =50mA or Ip=1.0A/Duty=1%/Pw=10us Test Time=1000HRS(-24HRS,+72HRS) REFERENCE STANDARD MIL-STD- 750 :1036 , 5min 10cycles(COB:Thot=65 ,Tcold= -25 ) MIL-STD-202:107D MIL-STD- 750 :1051 MIL-STD-883:1010 , -202:107D MIL-STD- 750 :1051 MIL-STD-883:1010 Exposed at serious changes _ _ 85 + 5 ~-35 + 5 , r i g h t l e d . c o m MIL-STD-202:210A MIL-STD- 750 :2031 JIS C 7021:A-1 MIL-STD-202:208D MIL-STD- 750 :2026 MIL-STD-883:2033 JIS C 7021:A-2 © 2003 American Bright Optoelectronics Corporation


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PDF 10min 10cycles MIL-STD-202 MIL-STD-750 MIL-STD-883 IR-01
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