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MIL-STD-183S, Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1999 - marking WMs

Abstract: 183S VPS05604 140KW
Text: BCR 183S PNP Silicon Digital Transistor Array 4 · Switching circuit, inverter, interface , Marking BCR 183S WMs Pin Configuration Package 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT , ) Package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm 2 Cu 1 Oct-19-1999 BCR 183S Electrical , , f = 1 MHz 1) Pulse test: t < 300µs; D < 2% 2 Oct-19-1999 BCR 183S DC Current Gain , ) 0.5 1.0 1.5 V 2.5 Vi(off) 3 Oct-19-1999 BCR 183S Total power dissipation


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PDF VPS05604 EHA07173 OT-363 Oct-19-1999 marking WMs 183S VPS05604 140KW
1997 - 183S

Abstract: Q62702-C2377
Text: BCR 183S PNP Silicon Digital Transistor Array · Switching circuit, inverter, interface circuit , Configuration BCR 183S WMs Package Q62702-C2377 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT-363 Maximum , -27-1996 BCR 183S Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol , Group 2 Nov-27-1996 BCR 183S DC Current Gain hFE = f (IC) VCE = 5V (common emitter , Nov-27-1996 BCR 183S Total power dissipation Ptot = f (TA*;TS) * Package mounted on epoxy


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PDF Q62702-C2377 OT-363 Nov-27-1996 183S
Not Available

Abstract: No abstract text available
Text: m HARRIS HCS20MS S E M I C O N D U C T O R Radiation Hardened Dual 4-Input NAND Gate December 1992 Pinouts Features • 3 Micron Radiation Hardened SOS CMOS 14 PIN CERAMIC DUAL-IN-LINE MIL-STD- 183S , DESIGNATOR CDIP2-T14, LEAD FINISH C TOP VIEW • Total Dose 200K or 1 Mega-RAD(Si) • • Dose Rate Upset >101° RAD(Siys 20ns Pulse [T |T NC [7 ci |T d i E A1 â , • Input Current Levels I I 2 5|xA at VOL, VOH 14 PIN CERAMIC FLAT PACK MIL-STD- 183S , DESIGNATOR


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PDF HCS20MS MIL-STD-183S, CDIP2-T14, 10sA/cm2 100nm 100nm
Not Available

Abstract: No abstract text available
Text: m HARRIS S E M I C O N D U C T O R HCS86MS Radiation Hardened Quad 2-Input Exclusive OR Gate Pinouts 14 PIN CERAMIC DUAL-IN-LINE MIL-STD- 183S , DESIGNATOR CDIP2-T14, LEAD FINISH C TOP VIEW A1 D e c e m b e r 19 9 2 Features · 3 Micron Radiation Hardened SOS CMOS · Total Dose 200K or 1 Mega-RAD(Si) . r tn e a D a ta I In c a t Q f i r V C i V c O fln c D u! · Cosmic Ray Upset Immunity , suffix). 14 PIN CERAMIC FLAT PACK MIL-STD- 183S , DESIGNATOR CDFP3-F14, LEAD FINISH C TOP VIEW Truth


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PDF HCS86MS MIL-STD-183S, CDIP2-T14, HCS86MS 05A/cm2
Not Available

Abstract: No abstract text available
Text: m HCS109MS H A R R IS S E M I C O N D U C T O R Radiation Hardened Dual JK Flip Flop December 1992 Features Pinouts • 3 Micron Radiation Hardened SOS CMOS 16 PIN CERAMIC DUAL-IN-UNE MIL-STD- 183S , DESIGNATOR CDIP2-T14, LEAD FINISH C TOP VIEW • Total Dose 200K or 1 Mega-RAD(Sl) • Dose Rate Upset >101° RAD(Si)/s 20ns Pulse • Cosmic Ray Upset Immunity < 2 x 10 s Errors , ] 02 16 PIN CERAMIC FLAT PACK MIL-STD- 183S , DESIGNATOR CDFP3-F14, LEAD FINISH C TOP VIEW


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PDF HCS109MS MIL-STD-183S, CDIP2-T14, 05A/cm2
Not Available

Abstract: No abstract text available
Text: ÇXI H A R R HCTS20MS I S S E M I C O N D U C T O R Radiation Hardened Dual 4-Input NAND Gate September 1995 Pinouts Features 3 Micron Radiation Hardened SOS CMOS 14 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE (SBDIP) MIL-STD- 183S CDIP2-T14 TOP VIEW Total Dose 200K RAD (Si) SEP Effective LET No Upsets: >100 MEV-cm2/mg A1 Single Event Upset (SEU) Immunity < 2 x , LEAD CERAMIC METAL SEAL FLATPACK PACKAGE (FLATPACK) MIL-STD- 183S CDFP3-F14 TOP VIEW DC Operating


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PDF HCTS20MS MIL-STD-183S CDIP2-T14 M302271 05A/cm2 100nm HCTS20 TA14426A.
Not Available

Abstract: No abstract text available
Text: SB " a r r i s December 1992 HCS10MS Radiation Hardened Triple 3-Input NAND Gate Pinouts 14 PIN CERAMIC DUAL-IN-LINE MIL-STD- 183S , DESIGNATOR CDIP2-T14, LEAD FINISH C TOP VIEW \s A1 [ 7 ¡ 4] VCC m ci Features · 3 Micron Radiation Hardened SOS CMOS · Total Dose 200K or 1 Mega-RAD(Si) · Dose Rate Upset >101° RAD(Siys 20ns Pulse · Cosmic Ray Upset Immunity < 2 x 10"9 Errors/Gate Day (Typ , 14 PIN CERAMIC FLAT PACK MIL-STD- 183S , DESIGNATOR CDFP3-F14, LEAD FINISH C TOP VIEW 1 · 2 3 4 5 14


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PDF HCS10MS MIL-STD-183S, CDIP2-T14, HCS10MS 05A/cm2 100nm
Not Available

Abstract: No abstract text available
Text: S December 1992 HCS08MS Radiation Hardened Quad 2-Input AND Gate Pinouts 14 PIN CERAMIC DUAUIN-LINE MIL-STD- 183S , DESIGNATOR CDIP2-T14, LEAD FINISH C TOP VIEW Features · 3 Micron Radiation Hardened SOS CMOS · Total Dose 200K or 1 M ega-RAD(SI) · Dose Rate Upset >101° RAD(Siys 20ns Pulse · Cosmic Ray Upset Immunity < 2 x 107 Errors/Gate Day HYP) · Latch-Up Free Under Any Conditions · , MIL-STD- 183S , DESIGNATOR CDFP3-F14, LEAD FINISH C TOP VIEW 1 · 2 3 4 5 14 13 12 10 Truth Table


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PDF HCS08MS MIL-STD-183S, CDIP2-T14, HCS08MS 05A/cm2 100nm
Not Available

Abstract: No abstract text available
Text: m HARRIS HCS14MS S E M I C O N D U C T O R Radiation Hardened HEX Inverting Schmitt Trigger December 1992 Pinouts Features 14 PIN CERAMIC DUAL-IN-LINE MIL-STD- 183S , DESIGNATOR CDIP2-T14, LEAD FINISH C TOP VIEW • 3 Micron Radiation Hardened SOS CMOS • Total Dose 200K or 1 Mega-RAD(Si) • Dose Rate Upset >101° RAD(Si)/s 20ns Pulse • Cosmic Ray Upset Immunity < 2 x 10'9 , li £ 5pA at VOL, VOH 14 PIN CERAMIC FLAT PACK MIL-STD- 183S , DESIGNATOR CDFP3-F14, LEAD FINISH C


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PDF HCS14MS MIL-STD-183S, CDIP2-T14, 10Oum
Not Available

Abstract: No abstract text available
Text: Ordering Code Pin Configuration BCR 183S WMs Package Q62702-C2377 1=E1 2=B1 3=C2 4=E2 5=B2 6 , 959 ■■fl235b05 012GÖQ4 001 ■1998-11-01 SIEMENS BCR 183S Electrical , BCR 183S DC Current Gain hFE = f (lç) Vq e = 5V (common emitter configuration , (common emitter configuration) 961 ' m 3E3SbD5 DiEoaab w 1998-11-01 m SIEMENS BCR 183S


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PDF BCR183S 10kii, Q62702-C2377 OT-363
Q62702-C2377

Abstract: vk sot-363 marking 7S Marking wms sot marking code vk, sot-363
Text: SIEMENS PNP Silicon Digital Transistor Array >Switching circuit, inverter, interface circuit, driver circuit · Built in resistor (R1 = 10kii, R2 = 10k£2) 6 » 4 5 ^ BCR 183S 3 2 1 VPS05604 , V Input resistor Resistor ratio «1 '/¡(o ff) BCR 183S Values typ. max. Unit ^(BR)CEO , Current Gain = f (Iq ) VCE = 5V (common emitter configuration) VcEsat = W > h FE = 2 0 BCR 183S , epoxy BCR 183S r*'7 s Permissible Pulse Load Ptotmax / PtotDc = f(tp) Permissible Pulse


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PDF 10kii, VPS05604 BCR183S OT-363 Q62702-C2377 300ns; vk sot-363 marking 7S Marking wms sot marking code vk, sot-363
1992 - HCS10MS

Abstract: No abstract text available
Text: HCS10MS S E M I C O N D U C T O R Radiation Hardened Triple 3-Input NAND Gate November 1994 Features Pinouts · 3 Micron Radiation Hardened SOS CMOS 14 PIN CERAMIC DUAL-IN-LINE MIL-STD- 183S , DESIGNATOR CDIP2-T14, LEAD FINISH C TOP VIEW · Total Dose 200K or 1 Mega-RAD(Si) · Dose Rate Upset >1010 RAD(SI)/s 20ns Pulse · Cosmic Ray Upset Immunity < 2 x 10-9 Errors/Gate Day (Typ , at VOL, VOH 14 PIN CERAMIC FLAT PACK MIL-STD- 183S , DESIGNATOR CDFP3-F14, LEAD FINISH C TOP VIEW


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PDF HCS10MS MIL-STD-183S, CDIP2-T14, -55oC 125oC 05A/cm2 HCS10MS
Not Available

Abstract: No abstract text available
Text: fu HARRIS S E M I C O N D U C T O R HCS14MS Radiation Hardened HEX Inverting Schmitt Trigger Pinouts 14 PIN CERAMIC DUAL-IN-LINE MIL-STD- 183S , DESIGNATOR CDIP2-T14, LEAD FINISH C TOP VIEW D e c e m b e r 19 9 2 Features · 3 Micron Radiation Hardened SOS CMOS · Total Dose 200K or 1 Mega-RAD(Si) · Dose Rate Upset >101° RAD(Siys 20ns Pulse · Cosmic Ray Upset Immunity < 2 x 10"9 Errors/Gate Day , suffix). 14 PIN CERAMIC FLAT PACK MIL-STD- 183S , DESIGNATOR CDFP3-F14, LEAD FINISH C TOP VIEW 1 · 2


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PDF HCS14MS MIL-STD-183S, CDIP2-T14, HCS14MS 05A/cm2
TA 7264

Abstract: No abstract text available
Text: S MWKRS December 1992 HCS109MS Radiation Hardened Dual JK Flip Flop Pinouts 16 PIN CERAMIC DUAL-IN-LINE MIL-STD- 183S , DESIGNATOR CDIP2-T14, LEAD FINISH C TOP VIEW 1 1 Features · 3 Micron Radiation Hardened SOS CMOS · Total Dose 200K or 1 Mega-RAD(Si) · Dose Rate Upset >1010 RAD(Siys 20ns Pulse · Cosmic Ray Upset Immunity < 2 x 10"® Errors/Bit Day (Typ) · Latch-Up Free Under Any Conditions · Military , Package (D suffix). 16 PIN CERAMIC FLAT PACK MIL-STD- 183S , DESIGNATOR CDFP3-F14, LEAD FINISH C TOP VIEW


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PDF HCS109MS MIL-STD-183S, CDIP2-T14, 109MS 05A/cm2 100nm TA 7264
Not Available

Abstract: No abstract text available
Text: HARR IS S E n i C O N D S E C T O R 5 ÛE D ■Œ 4 3 Q E 571 D G M B TO T Ü 3 Ö M H A S HCS04MS -7 - 4 D c me 1992 ee br - 7 - \ Pinouts Features • 3 Radiation Hardened Hex Inverter 14 PIN CERAMIC DUAL-IN-UNE MIL-STD- 183S , DESIGNATOR CDIP2-T14, LEAD FINISH C TOP VIEW 3 Micron Radiation Hardened SOS CMOS • Total Dose 200K or 1 Mega-RAD(SI) â , FLAT PACK MIL-STD- 183S , DESIGNATOR CDFP3-F14, LEAD FINISH C TOP VIEW Description 1 • 14


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PDF HCS04MS MIL-STD-183S, CDIP2-T14,
Not Available

Abstract: No abstract text available
Text: HARRIS S E M I C O N D U C T O R HCTS21MS Radiation Hardened Dual 4-Input AND Gate Pinouts 14 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE (SBDIP) MIL-STD- 183S CDIP2-T14, LEAD FINISH C TOP VIEW A1 ^ B1 October 1995 Features 3 Micron Radiation Hardened SOS CMOS Total Dose 200K RAD (Si) SEP Effective LET No Upsets: >100 MEV-cm2/mg Single Event Upset (SEU) Immunity < 2 x 10'9 Errors , METAL SEAL FLATPACK PACKAGE (FLATPACK) MIL-STD- 183S CDFP3-F14, LEAD FINISH C TOP VIEW A1 B1 NC C1 1 · 2


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PDF HCTS21MS MIL-STD-183S CDIP2-T14, HCTS21
Not Available

Abstract: No abstract text available
Text: 5flE » HA RR IS S E n i C O N » SE CT OR ■4302271 G043R21 b3S ■H A S m HARRIS HCS08MS S E M I C O N D U C T O R Radiation Hardened Quad 2-Input ANP Gate December 1992 Pinouts Features 14 PIN CERAMIC DUAL-IN-LINE MIL-STD- 183S , DESIGNATOR CDIP2-T14, LEAD FINISH C TOP VIEW • 3 Micron Radiation Hardened SOS CMOS • Total Dose 200K or1 Mega-RAD{Sip • Dose Rate , Current Levels II s 5|a at VOL, VOH A 14 PIN CERAMIC FLAT PACK MIL-STD- 183S , DESIGNATOR CDFP3-F14, LEAD


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PDF G043R21 HCS08MS MIL-STD-183S, CDIP2-T14, 05A/cm2
weld inverter circuit diagram

Abstract: HCS04MS
Text: VOL, VOH HCS04MS Radiation Hardened Hex Inverter Pinouts 14 PIN CERAMIC DUAL-IN-LINE MIL-STD- 183S , ) or a Weld Seal Ceramic Dual-ln-Line Package (D suffix). 14 PIN CERAMIC FLAT PACK MIL-STD- 183S


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PDF HCS04MS MIL-STD-183S, CDIP2-T14, HCS04MS 05A/cm2 weld inverter circuit diagram
2006 - Not Available

Abstract: No abstract text available
Text: (1.38) MAX. 130 S 183S S T eries RthJC (DC) = 0.105 K/ W 120 110 Conduc tion Angle 100 , - LENGHT 21 (0.83) MAX. CONTACT FACTORY 130 S 183S S T eries RthJC (DC) = 0.105 K/ W , teady S tate Value R thJC = 0.105 K/ W (DC Operation) 0.1 0.01 S 183S S T eries 0.001 , S 183S S T eries S inusoidal pulse T = 60°C C tp 1E2 1E1 500 400 200 1E2 1E3 , 1000 1500 3000 100 50 Hz 2500 3000 5000 1E2 S 183S S T eries T rapezoidal


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PDF I25244 ST183SPbF ST183S O-209AB
Not Available

Abstract: No abstract text available
Text: m HARRIS U U S E M I C O N D U C T O R HCS20MS Radiation Hardened Dual 4-Input NAND Gate Pinouts 14 PIN CERAMIC DUAL-IN-LINE MIL-STD- 183S , DESIGNATOR CDIP2-T14, LEAD FINISH C TOP VIEW December 1992 Features . 3 Micron Radiation Hardened SOS CMOS · Total Dose 200K or 1 Mega-RAD(Si) · Dose Rate Upset >101° RAD(Siys 20ns Pulse · Cosmic Ray Upset Immunity < 2 x 10"9 Errors/Gate Day (Typ · , 14 PIN CERAMIC FLAT PACK MIL-STD- 183S , DESIGNATOR CDFP3-F14, LEAD FINISH C TOP VIEW A1 I B1 I NC I


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PDF HCS20MS MIL-STD-183S, CDIP2-T14, HCS20MS 05A/cm2
2007 - Not Available

Abstract: No abstract text available
Text: PRODUCT: TRF250- 183S 308 Constitution Drive Menlo Park, CA 94025-1164 Phone: 800-227-4856 www.circuitprotection.com PolySwitch® PTC Devices Overcurrent Protection Device DOCUMENT: SCD26744 REV LETTER: F REV DATE: MAY 12, 2011 PAGE NO.: 1 OF 1 Specification Status: Released Operating Conditions at 20°C: Maximum Continuous Operating Voltage (VMCO): 100VDC Maximum Interrupt Current (IINT ): 10ARMS Fault , : PART DESCRIPTION TRF250- 183S TRF250-183S-2 PACKAGING TYPE Bulk Tape and Reel NOTES N/A Dim "D" not


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PDF TRF250-183S SCD26744 100VDC 10ARMS 250VRMS, GR1089 TRF250-183S TRF250-183S-2 E74889) 78165C)
Not Available

Abstract: No abstract text available
Text: HARR IS SEPIICOND SE CT OR 5ÔE D ■M30 2 27 1 0 0 4 3 ^ 3 3 3S7 « H A S m HARRIS HCS10MS S E M I C O N D U C T O R Radiation Hardened Triple 3-Input NAND Gate Decem ber 1992 Pinouts Features ~ - P 4 3 - Z 1 14 PIN CERAMIC DUAL-IN-LINE MIL-STD- 183S , DESIGNATOR CDIP2-T14, LEAD FINISH C TOP VIEW • 3 Micron Radiation Hardened SOS CMOS • Total Dose 200K or 1 , % of VCC Min • Input Current Levels II £ 5jiA at VOL, VOH 14 PIN CERAMIC FLAT PACK MIL-STD- 183S


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PDF HCS10MS MIL-STD-183S, CDIP2-T14, 430SS71 05A/cm2 100nmx100
2007 - E74889

Abstract: No abstract text available
Text: PRODUCT: TRF250- 183S PolySwitch® PTC Devices 308 Constitution Drive Menlo Park, CA 94025-1164 Phone: 800-227-4856 www.circuitprotection.com Overcurrent Protection Device Raychem Circuit Protection Products DOCUMENT: SCD 26744 PCN: REFER TO TABLE III BELOW REV LETTER: C REV DATE: MAY 29, 2007 PAGE NO.: 1 OF 1 Specification Status: Released Operating Conditions at 20°C: A Maximum , TRF250- 183S TRF250-183S-2 Agency Recognitions: Reference Documents: Precedence: Effectivity


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PDF TRF250-183S 100VDC 10ARMS 250VRMS, TRF250-183S-2 RF0769-000 RF0841-000 E74889) 78165C) E74889
2003 - IRF 4310

Abstract: 183S ST183S
Text: (1.38) MAX. 130 S 183S S T eries RthJC (DC) = 0.105 K/ W 120 110 Conduction Angle 100 , LENGHT 21 (0.83) MAX. CONTACT FACTORY 130 S 183S S T eries RthJC (DC) = 0.105 K/ W 120 110 , . Initial T = 125°C J No Voltage Reapplied 4000 Rated VRRM Reapplied 3500 3000 2500 S 183S S T , Z thJC (K/ W) Instantaneous On-s tate Current (A) 10000 S 183S S T eries T = 125°C J , = 0.105 K/ W (DC Operation) 0.1 0.01 S 183S S T eries 0.001 0.001 0.01 Maximum R


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PDF I25179 ST183S ST183S O-209AB 183SS IRF 4310 183S
Not Available

Abstract: No abstract text available
Text: HCS10MS f ü H A R R IS S E M I C O N D U C T O R Radiation Hardened Triple 3-Input NAND Gate Decem ber 1992 Pinouts Features 14 PIN CERAMIC DUAL-IN-LINE M1L-STD- 183S , DESIGNATOR CDIP2-T14, LEAD FINISH C TOP VIEW • 3 Micron Radiation Hardened SOS CMOS • Total Dose 200K or 1 Mega-RAD(Si) • Dose Rate Upset >101° RAD(SI)/s 20ns Pulse • Cosmic Ray Upset Immunity < 2 x 10 , II £ 5|jA at VOL, VOH 14 PIN CERAMIC FLAT PACK MIL-STD- 183S , DESIGNATOR CDFP3-F14, LEAD FINISH C


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PDF HCS10MS M1L-STD-183S, CDIP2-T14, 05A/cm2 100nm
Supplyframe Tracking Pixel