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CC2500_REFDES_062 CC2500_REFDES_062 ECAD Model Texas Instruments CC2500 reference design (62 mil layer spacing)
SMQ320LC31PQM40 SMQ320LC31PQM40 ECAD Model Texas Instruments MILITARY DIGITAL SIGNAL PROCESSORS 132-BQFP -55 to 125
5962-9760601NXB 5962-9760601NXB ECAD Model Texas Instruments MILITARY DIGITAL SIGNAL PROCESSORS 132-BQFP -55 to 125
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LM2940-5.0-MW8 LM2940-5.0-MW8 ECAD Model Texas Instruments Military Grade 1A 5V Output Linear Regulator / LDO 0-WAFERSALE -55 to 125
SM320C40KGDS50D SM320C40KGDS50D ECAD Model Texas Instruments Floating-Point Digital Signal Processors, Military 0-XCEPT -55 to 100

MIL-S-750. Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1N5620 die

Abstract: 1N5616UL JANH diode 1N4383 1N4585 1N5614 JANTX 1N5614 1N5614UL 1N5616 1N5618UL
Text: (JANHC and JANKC). 1.3 Maximum ratings. ta =f!Wc I0 = 750 "eJL Types VR VRUM = I , ) 1N5614, UL,US 200 200 1 750 2 -65 to +175 30 See 1N5616, 5/ UL,US 400 400 1 750 2 -65 to +175 30 figure 1N5618, 5/ UL,US 600 600 1 750 2 -65 to +175 30 6 1N5620, 5/ UL,US 800 800 1 750 2 -65 to +175 30 1N5622, 5/ UL,US 1,000 1,000 1 750 2 -65 to +175 30 1/ From 1 A at TA = +55°C, to 0.75 A dc at T. = +100°C, derate linearly at 5.56 mA/°C. 2/ For the 1 A rating at the +55°C and the 750 mA rating at


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PDF MIL-S-19500/427E MIL-S-19500/427D 1N5614, 1N5616, 1N5618, 1N5620, 1N5622, 1N5614UL, 1N5616UL, 1N5618UL, 1N5620 die 1N5616UL JANH diode 1N4383 1N4585 1N5614 JANTX 1N5614 1N5614UL 1N5616 1N5618UL
fast diode ejl b2

Abstract: MIL-S-19500/429 1N4942 1N4944 1N4946 1N4947 1N4948 1N5615 1N5617 1N5619
Text: 1N4942 I 200 1.0 . 750 15 150 -65 to +175 I 1N4944 I 400 1.0 . 750 15 8 150 -65 to +175 I 1N4946 I 600 1.0 . 750 15 8 250 -65 to +175 I 1N4947 I 800 1.0 . 750 15 33 250 -65 to +175 i 1N4948 I 1000 1.0 . 750 , Semiconductor Devices, General Specification for. STANDARDS MILITARY MIL-STD- 750 - Test Methods for , paragraph 4.5 of MIL-STD- 750 ; VR = VRWH rated (see 1.3); F = 50-60 Hz; IQ = 1.0 A dc. 4.3 Qualification , defined in tne general requirements of paragraph 4.5 of MIL-STD- 750 . VR = rated VRgM (see 1.3, 4.5.3, and


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PDF MIL-S-19500/359D MIL-S-19500/359C 1N4942, 1N4944, 1N4946, 1N4947, 1N4948 1N5615, 1N5617, 1N5619, fast diode ejl b2 MIL-S-19500/429 1N4942 1N4944 1N4946 1N4947 1N5615 1N5617 1N5619
JAN 1N4150-1

Abstract: JANS1N4150-1 JANS1N6640 1N3600 1N4150-1 1N4150UR-1 3pda Q033b D0213 Scans-0016000
Text: . STANDARDS MILITARY MIL-STD- 750 - Test Methods for Semiconductor Devices. (Unless otherwise indicated , MIL-STD- 750 and MIL-S-19500, and herein. Lead finish may be specified in the contract (see 6.2), without , . Power burn-in conditions are as follows (see 4.5.3): a. HIL-STD- 750 , method 1038, test condition B, T. = room ambient as defined in the general requirements of MIL-STD- 750 , (see 4.5), f = 50-60 Hz, IQ = 200 n»A dc, VRgH = 50 V(pk). b. MIL-STD- 750 , method 1038, test condition B, Tft = 120°C, If = 33.75


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PDF D0DD125 0033bfi? MIL-S-19500/231F MIL-S-19500/231 1N3600, 1N4150-1, 1N4150UR-1 JANSIN4150-1 MIL-S-19500/609 JANS1N6640 JAN 1N4150-1 JANS1N4150-1 JANS1N6640 1N3600 1N4150-1 3pda Q033b D0213 Scans-0016000
1N5415

Abstract: 1N5415US 1N5416US 1N5417US 1N5420 1N5420US
Text: Specification for. STANDARDS MILITARY MIL-STD- 750 - Test Methods for Semiconductor Devices. (Unless otherwise , shall be in accordance with MIL-STD- 750 , MIL-S-19500, and herein. 3.3.2 Encapsulant material. In , requirements of MIL-STD- 750 , (see 4.5). 4.4 Quality conformance inspection. Quality conformance inspection , MIL-STD- 750 , (see 4.5); f = 50-60 Hz; V„ = rated VRWK (see 1'3 and ^.5.2); ^n = *off 3 minutes minimum , defined in the general requirements of MIL-STD- 750 , (see 4.5); f = 50-60 Hz; VR = rated VRHH (see 1.3


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PDF 003MSb5 1N5415 1N5420, 1N5415US 1N5420US, MIL-S-19500. MIL-S-19500 1N5416US 1N5417US 1N5420 1N5420US
IN3070

Abstract: 1N493A 1N3070 JANTX HA 4016 1N3070 1N3070-1 1N3070UR-1 1N4938UR-1 DIODE EJL
Text: . STANDARDS MILITARY 4 0000125 003S04(d 710 ■MILS MIL-S-19500/169H H1L-STD- 750 - Test Methods for , solderable as defined in MIL-S-19500, MIL-STD- 750 , and herein. Where a choice of lead finish is desired, it , ; TA = room ambient as defined in the general requirements in (see 4.5) of MIL-STD- 750 . or I, = 160 mA dc; TA * room ambient as defined in the general requirements in (see 4.5) of MIL-STD- 750 . 4.3.3 , shall be performed in accordance with MIL-STD- 750 , method 3101 (read and record date Z9JX). Zajx shall


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PDF MIL-S-19500/169H MIL-S-19500/169G 1N3070, 1N3070-1, 1N3070UR-1, 1N49M, 1N493A-1, 1N4938UR-1 MIL-S-19500. JANCA4938) IN3070 1N493A 1N3070 JANTX HA 4016 1N3070 1N3070-1 1N3070UR-1 DIODE EJL
1N3190

Abstract: 1N3189 1N3191 1N3189 JAN 1N3190 JAN 1N3190 JANTX 1N3191 JAN 155E MIL-S-19500 1N3189
Text: Component Parts. MIL-STD- 750 - Test Methods for Semiconductor Devices. FSC 5961 MIL SPECS TC| DDDD1SS , cycling)■Thermal shock (temperature cycling) shall be performed in accordance with MIL-STD- 750 , method , acceleration test in accordance with MIL-STD- 750 , method 2006, with the following exceptions: The test shall be , fine-leak tested in accordance with MIL-STD- 750 , method 1071, test condition G or H. 4.4.4.2 Hermetic seal (gross-leak) test (bubble). All devices shall be tested for gross leaks in accordance with MIL-STD- 750 , method


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PDF 00DD15S MIL-S-19500/155E 1N3189, 1N3190, 1N3191, 000D1HS 1QE17 MIL-S-19500/155D 1N3190 1N3189 1N3191 1N3189 JAN 1N3190 JAN 1N3190 JANTX 1N3191 JAN 155E MIL-S-19500 1N3189
003S5

Abstract: ATI 1026 Sn 4011 1N6641 DIODE MARKING EJL 1N6639 1N6639US 1N6640 1N6640US 1N6641US
Text: . STANDARDS MILITARY MIL-STD- 750 - Test Methods for Semiconductor Devices. (Unless otherwise indicated , solderable as defined in MIL-S-19500, MIL-STD- 750 , and herein. Where a choice of lead finish is desired, it , ): Method 1038, condition B, T^ = room ambient as defined in 4.5 of MIL-STD- 750 . VR = rated VgUH; f = 50-60 , 4.5 of MIL-STD- 750 . 4.4 Quality conformance inspection. Quality conformance inspection shall be in , MIL-STD- 750 , method 3101. The following conditions shall apply: IH = 1.0 amp mininun. tH = 10 ms. IM =


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PDF HIL-S-19500/609A MIL-S-19500/609 1N6639, 1N6640, 1N6641, 1N6639US, 1N6640US, 1N6641US MIL-S-19500/231. 1N4150-1 003S5 ATI 1026 Sn 4011 1N6641 DIODE MARKING EJL 1N6639 1N6639US 1N6640 1N6640US
T 4512 H diode

Abstract: ps 4512 diode diode T 4512 H 1N5551US 1N5550 1N5550US 1N5551 1N5552 1N5554 1N5554US
Text: for. STANDARD MILITARY MIL-STD- 750 - Test Methods for Semiconductor Devices. (Unless otherwise , defined in MIL-S-19500, MIL-STD- 750 , and herein. 7 0000125 0035452 b4fl MIL-S-19500/420D 3.3.2 Diode , ) are as follows (see 4.5.1): T. = room ambient as defined in the general requirements of 4.5 of MIL-STD- 750 , performed in accordance with MIL-STO- 750 , method 3101. The maximum limit shall not to exceed the group A , accordance with MIL-STD- 750 , method 3101 (read and record date ZeJX). ZeJX s'la'-'- be supplied on one lot


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PDF MIL-S-19500/4200 MIL-S-19500/420C 1N5550 1N5554, 1N5550US 1N5554US MIL-S-19500. JANHCC1N5551 JANKCA1N5551 1N5552 T 4512 H diode ps 4512 diode diode T 4512 H 1N5551US 1N5551 1N5552 1N5554
MIL-S-19500/578

Abstract: JANS1N4148US-1 1N6642 JANTX 1N4148-1 JANS 1N6642 JANTXV 1N4148-1 JANTX 1N6642 1n4148 die DIODE LN4148 IC 4011
Text: . STANDARDS MILITARY MIL-STD- 750 - Test Methods for Semiconductor Devices. (Unless otherwise indicated , . 3.3.1 Lead finish. Lead finish shall be solderable as defined in MIL-S-19500, MIL-STD- 750 , and herein , B, TA = room ambient as defined in the general requirements of MIL-STD- 750 , (see 4.5); Vfl ® rated , as defined in the general requirements of MIL-STD- 750 , see 4.5). 4.3.2 Thermal impedance ZQJX , -19500/578B accordance with MIL-STD- 750 , method 3101. Test each device separately. The maximum limit and


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PDF MIL-S-19500/578B MIL-S-19500/578A 1N6638, 1N6642, 1N6643, 1N6638U, 1N6642U, 1N6643U, 1N4148-1 MIL-S-19500/578 JANS1N4148US-1 1N6642 JANTX 1N4148-1 JANS 1N6642 JANTXV 1N4148-1 JANTX 1N6642 1n4148 die DIODE LN4148 IC 4011
1N5595

Abstract: JANKCA1N3595 M4E-1 1N3595US 1N3595 1N3595-1 1N3595UR-1 1N3595US-1 xr111 HP 4066
Text: Semiconductor Devices, General Specification for. STANDARD MILITARY MIL-STD- 750 - Test Methods for , be solderable in accordance with MIL-STD- 750 and MIL-S-19500. Where a choice of lead finish is , MIL-STD- 750 ; IF = 150 mA dc. 4.4 Quality conformance inspection. Quality ccr,:rn'> e -ropection shall be , as defined in the general requirements of MIL-STD- 750 ; I0 = 150 mA dc; ton = t0-f-f = 3 minutes , MIL-STD- 750 . 4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the


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PDF G0DQ125 GG34747 MIL-S-19500/241F MIL-S-19500/241E 1N3595, 1N3595US, 1N3595UR, 1N3595-1, 1N3595UR-1, 1N3595US-1 1N5595 JANKCA1N3595 M4E-1 1N3595US 1N3595 1N3595-1 1N3595UR-1 xr111 HP 4066
Krypton-85

Abstract: 2N1484 2N1486 2N1483 2N1485 2N1485 JANTX transistor 2n1485
Text: characteristics. hfe y VCE = 4. 0 Vdc ic = 750 mAdc vbe y VCE = 4. 0 Vdc ic = 750 mAdc VCE(sat) I.' ic = 750 , and Electrical Component Parts. MIL-STD- 750 - Test Methods for Semiconductor Devices. (Copies of , 4 of MIL-STD- 750 . 4.4.2 Time limit for end points. End point tests for qualification and quality , . TABLE I. Group A inspection MIL-STD- 750 LTPD Symbol Limits Examination or test Method Details , -19500/ 180D TABLE I. Group A inspection - Continued MIL-STD- 750 LTPD Symbol Limits Examination or test


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PDF MIL-S-19500/180D MIL-S-19500/180C 2N1483, TX2N1483, 2N1484, TX2N1484 2N1485, TX2N1485, 2N1486, TX2N1486 Krypton-85 2N1484 2N1486 2N1483 2N1485 2N1485 JANTX transistor 2n1485
ta1938

Abstract: 1N5835 RAW MATERIAL INSPECTION procedure 1N5836 MR 4011
Text: -202 - Test Methods for Electronic and Electrical Component Parts. MIL-STD- 750 - Test Methods for , cycling) in accordance with MIL-STD- 750 , method 1051, test condition C, except that cycling duration shall , test in accordance with MIL-STD- 750 , method 2006, with the following exceptions: The test shall be , shall be fine-leak tested in accordance with MIL-STD- 750 , method 1071, test condition G or H. 4.6.4.2 , MIL-STD- 750 , method 1071, test condition D, except that the solution may be any suitable noncorrosive


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PDF MIL-S-19500/UQU 1N5835 1N5836 MIL-S-19500, MIL-S-19500. MIL-S-19500 5961-A497 ta1938 RAW MATERIAL INSPECTION procedure 1N5836 MR 4011
2N2553

Abstract: 2N1041 2N2555 2N1039 2N2557 2N2559 2N2559 JAN Germanium power
Text: MIL=STD=202 - Test Methods for Electronic and Electrical Component Parts. MIL-STD- 750 - Test Methods for , . MIL-S-19500'89D Examination or lost MIL-STD- 750 Limits Method Drtn.J* (SeeXT. 2) LTPD Symbol Min , 5 Breakdown voltage, collector to base 3001 Bias cond. D 2N1039 2N2553 2N2557 IC = - 750 .uAdc nVCDO -G0 p n - 1>U -60 — Vdc V ui; Vdc 2N1041 2N2555 2N2559 jq = - 750 /¿Ado BVCBO i nn - i , , ciui».ut- a to base 302G Biäs cond. D" IE = - 750 /IAde -20 - Vdc Collector to emitter cutoff current


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PDF MIL-S-19500 2N1039. 2N1041, 2N2553, 2N2555. 2N2557 2N2559 2N1039 2N1041 2N2553 2N2555 2N2559 2N2559 JAN Germanium power
D0307

Abstract: marking a007 vqe 24 er 2N5927 marking JTs US ARMY TRANSISTOR CROSS
Text: MIL-S-19500 - Semiconductor Devices, General Specification for. STANDARD MILITARY MIL-STD- 750 - Test , conditions are in accordance with MIL-STD- 750 , method 1039, test condition b and as follows: Ta = 30°C *5 , accordance with method 3131 of MIL-STD- 750 . The following details shall apply: a. Ifo measurement , MIL-STD- 750 , method 2131 for definition). f. imp measurement delay time - 20 us maximum. g. t$w , Inspection MIL-STD- 750 1 1 Symbol Limits Unit 1 1 Methodl Conditions "1 1 Min Max 1 Subgroup' 1 1 1 j


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PDF MIL-S-19500/440A MIL-S-19500/440( 2N5927, MIL-S-19500. 5961-A007) D0307 marking a007 vqe 24 er 2N5927 marking JTs US ARMY TRANSISTOR CROSS
1N5148A

Abstract: 1N5139A MIL-STD-750 METHOD 2036 5961-N072 jantx 1n5139a
Text: . MIL-STD- 750 - Test Methods for Semiconductor Devices. (Unless otherwise indicated, copies of federal and , with MIL-STD- 750 and MIL-S-19500, and herein. Lead finish may be specified in the contract (see 6.2 , , II, and III, the referenced methods of MIL-STD- 750 , and the figures herein. Section 4 of MIL-STD- 750 , Ta = 25°C. (Refer to test method 4071 in MIL-STD- 750 for guidance in the performance of this test , TABLE I. Group A inspection. Inspection y KIL-STD- 750 Symbol Limits 2/ Unit Method Conditions Min


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PDF G00Q125 D032flhb MIL-S-19500/383A MIL-S-19500/383 1N5139A 1N5148A MIL-S-19500 5961-N072) MIL-STD-750 METHOD 2036 5961-N072 jantx 1n5139a
1N9778

Abstract: 1N9628-1 1n9628 3195g 1N9920-1 1N9878 1N9818-1 3195gc 1n9620 1n9918
Text: Semiconductor Devices, General Specification for. STANDARD MILITARY MIL-STD- 750 - Test Methods for , . 3.3.1 Lead finish. Lead finish shall be solderable as defined in MIL-S-19500, MIL-STD- 750 , and herein , conditions in accordance with MIL-STD- 750 , method 1038, test condition B, TEC = +75°C to +125°C for , accordance with MIL-STD- 750 , method 3101. The maximum limit for Z©JX in screening (table XI of MIL-S , measurement shall be in accordance with MIL-STD- 750 , method 3101 or 4081. Forced moving air or draft shall not


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PDF GQ34S2R HXL-S-19500/117K HIL-S-19500/117J 1H962B-1 1N992B-1, 1N962BUR-1 1N992BUR-1, 1N962C-1 1N992C-1, 1N962CUR-1 1N9778 1N9628-1 1n9628 3195g 1N9920-1 1N9878 1N9818-1 3195gc 1n9620 1n9918
transistor 21Y

Abstract: 2N1556 2N1556A TRANSISTOR 3052 2N1553A 2N1554A 2N1555A 2N1555 J717 2N1553
Text: and Electrical Component Parts MIL-STD- 750 Test Methods for Semiconductor Devices (Copies of , measurements".-Conditions for "Pulse Measurements" shall be as specified in Section 4 of MIL-STD- 750 . 4.3.2 Hennetic seal test.-The transistors shall be subjected to hermetic seal test(s) in accordance with Method 1071 in MIL-STD- 750 , A inspection - (Cont'd) Test Method per MIL-SID- 750 Examination or test Conditions Limits , Examination or L.imcs MIL- STD- 750 test Conditions LTPD Symbol Min Max Unit 3251 Subgroup 3 Pulse response


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PDF /331A MIL-S-19500/ 2N1553A 2N1556A 2N1554A 2N1555A 2N1556A transistor 21Y 2N1556 TRANSISTOR 3052 2N1555 J717 2N1553
190-32 UNF-2a

Abstract: 1N5812 diode 1N5812 1N5814 1N5816 1N5816 diode 478D
Text: Federal Services. MILITARY MIL-STD- 750 - Test Methods for Semiconductor Devices. (Unless otherwise , be solderable in accordance with MIL-S-19500, MIL-STD- 750 , and as specified herein. Where a choice of , / I |Vf2 and Iri I I I |Not applicable j ! I 10 |MIL-STD- 750 , method 1038, ¡test condition A; t = 96 , I I I I 12 |Burn-in, see 4.3.4, |MIL-STD- 750 , method 1038, I test condition A I I |Burn-in, see , Surge current. Surge current, see MIL-STD- 750 , method 4066. IFSM = 400 A, 6 surges, tp = 8.3 ms or


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PDF DQQQ12S DG34g7M MIL-S-19500/478E MIL-S-19500/478D 1N5812, 1N5814, 1N5816, JANCA1N5812) 1N5812 A1N5812 190-32 UNF-2a 1N5812 diode 1N5814 1N5816 1N5816 diode 478D
2N1558A

Abstract: 2N1559 examination date sheet of 12 2N1557A 2N1560A 2N1560 Germanium power 2N1559A
Text: and Electrical Component Parts MIL-STD- 750 Test Methods For Semiconductor Devices (Copies of , with "Pulse Measurements" requirements in Section 4 of Standard MIL-STD- 750 . 4.3.2 Hermetic seal test , MIL-STD- 750 except that the following test conditions therein shall apply hereto: a. Fine-leak test: per , Conditions LTPD Symbol Limits Unit per test Min Max MIL-STD- 750 1/ Subgroup 1 20 2071 Visual and , inspection - (Cont'd) Test Method Examination or Conditions LTPD Symbol Limits per test Min Max MIL-STD- 750


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PDF MIL-S-19500/330A MIL-S-19506/330 2N1557A 2N1560A 2N1558A 077Q3 2N1559 examination date sheet of 12 2N1560A 2N1560 Germanium power 2N1559A
Helipot POTENTIOMETER

Abstract: 2N4947 transistor WL 431 Helipot 2N4949 2N4947 JAN 2N4948 JANTX TXAL118B.388B 2N4948 2n4948 jan
Text: Semiconductor Devices, General Specification for. STANDARD MILITARY MIL-STD- 750 - Test Methods for , conditions shall be as follows: Test method 1039, condition A of MIL-STD- 750 . Emitter to base-one open , measurements. Conditions for pulse measurements shall be as specified in section 4 of MIL-STD- 750 . 4.5.2 , 3041 of MIL-STD- 750 except that the words "collector", "base", and "emitter" shall be replaced with , MIL-S-19500/388B TABLE I. Group A inspection. Inspection 1/ MIL-STD- 750 Method Conditions Symbol


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PDF MIL-S-19500/388B MIL-S-19500/388A 2N4947, 2N4948, 2N4949 MIL-S-19500. Helipot POTENTIOMETER 2N4947 transistor WL 431 Helipot 2N4947 JAN 2N4948 JANTX TXAL118B.388B 2N4948 2n4948 jan
D0-213AA

Abstract: Scans-0016000 1N4153-1 JANTXV 1N4153 1N4153-1 1N4153UR-1 1N4534 337F
Text: Specification for. STANDARD MILITARY MIL-STD- 750 - Test Methods for Semiconductor Devices. (Unless otherwise , . Lead finish shall be solderable in accordance uith MIL-STD- 750 , MIL-S-19500. Where a choice of lead , requirements of MIL-STD- 750 , paragraph 4.5. Condition 1: Io = 150 mA dc, Vr = 50 V (pk). Condition 2: If = , mA dc, Vr =■50 V (pk), Ta = Room ambient as defined in the general requirements of MIL-STD- 750 , measurements. Conditions of pulse measurements shall be specified in paragraph 4.3.2.1 of MIL-STD- 750 . 4.5.2


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PDF 33clb5 1N4153, 1N4153-1, 1N4153UR-1, 1N4534 MIL-S-19500 DO-35 DO-34) D0-213AA) D0-213AA Scans-0016000 1N4153-1 JANTXV 1N4153 1N4153-1 1N4153UR-1 337F
ic 4016

Abstract: 1N3206 DIODE PK IN 4001 MIL-STD-750 METHOD 2036 1n4373 MIL-STD-750 METHOD 2036 CONDITION E MIL-S-19491 D253S IC 4011 details
Text: For. STANDARD MILITARY MIL-STD- 750 - Test Methods for Semiconductor Devices. (Copies of , measurement. Pulse measurement shall be in accordance with section 4 of MIL-STD- 750 . 4. 7. 2 Thermal shock , I. Group A inspection Examination or test MIL-STD- 750 LTPD Limits Method Details Symbol Min , -19500/195D Examination or test MIL-STD- 750 LTPD Limits Method Details Symbol Min Max Unit Subgroup 1 , 0D0E540 4 MIL-S-19500/195D TABLE n. Group B inspection - Continued MIL-STD- 750 LTPD Limits


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PDF 0005S3M MIL-S-19500/195D 1N3206 MIL-S-19500/195D, QQ0012S MIL-S-19500. MIL-S-19500 1N4373 ic 4016 1N3206 DIODE PK IN 4001 MIL-STD-750 METHOD 2036 MIL-STD-750 METHOD 2036 CONDITION E MIL-S-19491 D253S IC 4011 details
s13001

Abstract: 11n120 IC 4011 pin DETAIL HA 4016 IC 4011 14 PIN 1N1202A 1N1204A 1N1206A 1N3671A 1N3673A
Text: . STANDARDS FEDERAL FED-STD-H28 - Screw-Thread Standards for Federal Services. MILITARY MIL-STD- 750 - Test , / Vpg and 2/ 10 MIL-STD- 750 , method 1038, test condition A, t = 96 hrs. MIL-STD- 750 , method 1038, test , and 4.5.1. MIL-STD- 750 , method 1038, test condition B. Not applicable 13 Subgroups 2 and 3 of table I , shall apply to screen 11 for JANTX and JANTXV. 4.3.1 Surge current. Surge current, see MIL-STD- 750 , accordance with MIL-STD- 750 , method 3101. The AVp conditions and maximum Vp limit shall be derived by each


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PDF 00001HS 1N1202A, 1N1204A, 1N1206A, 1N3671A 1N3673A MIL-S-19500. 1N1204A S13001 935A486-1 s13001 11n120 IC 4011 pin DETAIL HA 4016 IC 4011 14 PIN 1N1202A 1N1206A
003431b

Abstract: 1N3038B HA 4016 1N3016B 1N3016B-1 1N3051B 1N3821A 1N3821A-1 1N3828A JANTX1N3821A-1
Text: Devices, General Specification for. STANDARD MILITARY MIL-STD- 750 - Test Methods for Semiconductor , for (JANHC). 3.3.1 Lead finish. Lead finish shall be solderable in accordance with MIL-STD- 750 and , conditions in accordance with MIL-STD- 750 , method 1038, test condition 8, TEC = +75°C to +125°C for , Z9JX measurements shall be performed in accordance with HIL-STD- 750 , method 3101. The maximum limit , . Thermal resistance measurement shall be in accordance with MIl-STD- 750 , method 3101 or 4081. Forced moving


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PDF QQ00125 0Q343G7 MIL-S-19500/115H MIL-S-19500/115G 1N3821A 1N3828A, 1N3016B 1N3051B, 1N3821A-1 1N3828A-1, 003431b 1N3038B HA 4016 1N3016B-1 1N3051B 1N3828A JANTX1N3821A-1
A720 transistor

Abstract: transistor A720 4392 ic equivalent 2N3906 350MW
Text: STANDARDS MIL-STD-202 - Test Methods for Electronic and Electrical Component Parts MIL-STD- 750 - Test , MIL-STD- 750 Limits Conditions ltpd SYM Min Max Units 1/ Subgroup 1 2071 Visual and Mechanical , per or Test MIL-STD- 750 Limits Conditions LTPD SYM Min Max Units Static For- 3076.1 ward , ) Test Method Examination per or Test MIL-STD- 750 Limits Conditions LTPD SYM Min Max Units , Mil.-S-19 500/530 (ER) TABLE TI - Group B Inspection Test Method Examination per or Test 1/ 2/ MIL-STD- 750


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PDF 2N3906 MIL-S-19500/530 MIL-S-19500. MIL-S-19500 5961-A720) A720 transistor transistor A720 4392 ic equivalent 2N3906 350MW
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