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Part Manufacturer Description Datasheet Download Buy Part
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C

MIL GRADE TRANSISTOR ARRAY DATA SHEET Datasheets Context Search

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1999 - 4 npn transistor ic 14pin

Abstract:
Text: DATA SHEET COMPOUND TRANSISTOR µPA104 HIGH FREQUENCY NPN TRANSISTOR ARRAY FEATURES · 9 , transistor array for formation of high speed OR/NOR gates. Its internal transistor configuration and , connection diagram for description of leads. 2 Data Sheet P10709EJ2V0DS00 µPA104 ELECTRICAL , : Substrate should be connected to the lowest voltage point in order to prevent latch-up. Data Sheet , 4 1 2 5 10 20 50 100 Collector Current, IC (mA) Data Sheet P10709EJ2V0DS00 2 0


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PDF PA104 PA104B: PA104G: 14-pin PA104 4 npn transistor ic 14pin lowest noise audio NPN transistor 8 npn transistor ic 14pin C10535E MICRO-X TRANSISTOR MARK Q6 MIL GRADE TRANSISTOR ARRAY
1999 - 4 npn transistor ic 14pin

Abstract:
Text: DATA SHEET COMPOUND TRANSISTOR µPA103 HIGH FREQUENCY NPN TRANSISTOR ARRAY FEATURES · , bipolar transistor array consisting of a common emitter pair and three individual bipolar transistors. It , connection diagram for description of leads. 2 Data Sheet P10708EJ2V0DS00 µPA103 ELECTRICAL , 11 10 9 8 SUB Q4 Q5 Q1 1 2 Q3 Q2 3 4 5 6 Data Sheet , 4 1 2 5 10 20 50 100 Collector Current, IC (mA) Data Sheet P10708EJ2V0DS00 2 0


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PDF PA103 PA103B: PA103G: 14-pin PA103 4 npn transistor ic 14pin C10535E lowest noise audio NPN transistor
1999 - 4 npn transistor ic 14pin

Abstract:
Text: DATA SHEET COMPOUND TRANSISTOR µPA102 HIGH FREQUENCY NPN TRANSISTOR ARRAY FEATURES · TWO , APPLICATIONS The µPA102 is a user configurable Silicon bipolar transistor array consisting of two separate , * See performance characteristics for voltage. Data Sheet P10707EJ2V0DS00 3 µPA102 TYPICAL , Data Sheet P10707EJ2V0DS00 2 5 10 20 50 100 Collector Current, IC (mA) 2 0 Noise , (C10535E). Data Sheet P10707EJ2V0DS00 5 µPA102 [MEMO] 6 Data Sheet P10707EJ2V0DS00


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PDF PA102 PA102B: 14-pin PA102G: PA102 4 npn transistor ic 14pin 8 npn transistor ic 14pin C10535E UPA102G
1999 - 4 npn transistor ic 14pin

Abstract:
Text: DATA SHEET COMPOUND TRANSISTOR µPA101 HIGH FREQUENCY NPN TRANSISTOR ARRAY FEATURES · , This Si bipolar transistor array contains six bipolar transistors which have fT 9 GHz. Applications , connection diagram for description of leads. 2 Data Sheet P10706EJ2V0DS00 µPA101 ELECTRICAL , voltage. Data Sheet P10706EJ2V0DS00 3 µPA101 TYPICAL PERFORMANCE CHARACTERISTICS (TA = +25 °C , 0.5 4 1 2 5 10 20 Collector Current, IC (mA) 50 4 Data Sheet P10706EJ2V0DS00 1


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PDF PA101 PA101B: 14-pin PA101G: PA101B-E1 4 npn transistor ic 14pin C10535E MICRO-X TRANSISTOR MARK Q6 MIL GRADE TRANSISTOR ARRAY Silicon Bipolar Transistor Q6
C10535E

Abstract:
Text: . DATA SHEET COMPOUND TRANSISTOR µPA104 HIGH FREQUENCY NPN TRANSISTOR ARRAY FEATURES · 9 GHz , GATES DESCRIPTION AND APPLICATIONS The µPA104 is a user-configurable, Si bipolar transistor array , description of leads. 2 Data Sheet P10709EJ2V0DS00 µPA104 ELECTRICAL CHARACTERISTICS (Unless , : Substrate should be connected to the lowest voltage point in order to prevent latch-up. Data Sheet , 4 1 2 5 10 20 50 100 Collector Current, IC (mA) Data Sheet P10709EJ2V0DS00 2 0


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2002 - smd transistor HX

Abstract:
Text: available for every product. Please refer to the data sheet for specific ordering information. 2-3 1-888 , Grid Array (CPGA) H: Small Outline Transistor Plastic (SOT) J: Ceramic Dual-in-line Frit Seal (CERDIP , product. Please refer to the data sheet for specific ordering information. 2-4 1-888-INTERSIL or , refer to the data sheet for specific ordering information. 2-5 1-888-INTERSIL or 321-724-7143 , Carrier (PLCC) S: DIL Formed TO-5 T: Can Z: Single-In-Line Plastic (SIP) Blank: Refer to Data Sheet


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PDF 82CXXX -25oC -40oC -55oC 125oC JM38510/ 1-888-INTERSIL smd transistor HX TRANSISTOR SMD MARKING CODE TK TRANSISTOR SMD MARKING CODE MP smd transistor HX 45 hc221 TRANSISTOR SMD MARKING CODE WM cdp68hc68 SMD TRANSISTOR MARKING by 4p intersil standard part marking HIP TRANSISTOR SMD MARKING CODES
14pin npn transistor

Abstract:
Text: . DATA SHEET COMPOUND TRANSISTOR µPA102 HIGH FREQUENCY NPN TRANSISTOR ARRAY FEATURES · TWO , APPLICATIONS The µPA102 is a user configurable Silicon bipolar transistor array consisting of two separate , * See performance characteristics for voltage. Data Sheet P10707EJ2V0DS00 3 µPA102 TYPICAL , Data Sheet P10707EJ2V0DS00 2 5 10 20 50 100 Collector Current, IC (mA) 2 0 Noise , (C10535E). Data Sheet P10707EJ2V0DS00 5 µPA102 [MEMO] 6 Data Sheet P10707EJ2V0DS00


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C10535E

Abstract:
Text: . DATA SHEET COMPOUND TRANSISTOR µPA103 HIGH FREQUENCY NPN TRANSISTOR ARRAY FEATURES · FIVE , description of leads. 2 Data Sheet P10708EJ2V0DS00 µPA103 ELECTRICAL CHARACTERISTICS (Unless , Q1 1 2 Q3 Q2 3 4 5 6 Data Sheet P10708EJ2V0DS00 7 3 µPA103 , Collector Current, IC (mA) Data Sheet P10708EJ2V0DS00 2 0 Noise Figure, NF (dB) VCC = 3 V f , MOUNTING TECHNOLOGY MANUAL (C10535E). 6 Data Sheet P10708EJ2V0DS00 µPA103 [MEMO] Data Sheet


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MICRO-X TRANSISTOR MARK Q6

Abstract:
Text: . DATA SHEET COMPOUND TRANSISTOR µPA101 HIGH FREQUENCY NPN TRANSISTOR ARRAY FEATURES · , This Si bipolar transistor array contains six bipolar transistors which have fT 9 GHz. Applications , connection diagram for description of leads. 2 Data Sheet P10706EJ2V0DS00 µPA101 ELECTRICAL , voltage. Data Sheet P10706EJ2V0DS00 3 µPA101 TYPICAL PERFORMANCE CHARACTERISTICS (TA = +25 °C , 0.5 4 1 2 5 10 20 Collector Current, IC (mA) 50 4 Data Sheet P10706EJ2V0DS00 1


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4 npn transistor ic 14pin

Abstract:
Text: DATA SHEET NEC COMPOUND TRANSISTOR _ _ _ _ _ _ _ _ _ _jf P A 103 HIGH FREQUENCY NPN TRANSISTOR ARRAY FEATURES · FIVE MONOLITHIC 9 GHz fr TRANSISTORS: Two of these use a common emitter pin , DESCRIPTION AND APPLICATIONS The ¿¿PA103 is a user configurable Silicon bipolar transistor array consisting , quality grade of NEC devices in " S tandard" unless othe rw ise specified in NEC's Data S heets or Data B , PART NUMBER ^PAI03B-E1 ,uPA103G-E1 PACKAGE 14-pin ceramic package 14-pin plastic SOP (225 mil ) ._


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PDF iPA103B: iPA103G: 14-pin fPA103 PA103 14-pin 4 npn transistor ic 14pin PA1032 8 npn transistor ic 14pin
IC-3368

Abstract:
Text: DATA SHEET NEC r FIELD EFFECT POWER TRANSISTOR i COMPOUND - ¿ ¿ P A 1600 MONOLITHIC POWER MOS FET ARRAY DESCRIPTION The uPA1600 is Monolithic N-channel Power MOSFET Array that built in , : Output Quality Grade Standard Standard · Gate Protection Diode, built in. ORDERING INFORMATION , ) Please referto "Q uality grade on NEC Sem iconductor Devices" (Docu m ent num ber IEI-1209) published by NEC Corporation to know the specification of quality grade on th e devices and its recom m ended


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PDF uPA1600 IC-3368 smd transistor 9j UPA1600GS 20PIN iso 1207 MIL GRADE TRANSISTOR ARRAY PA-1600 PA1600 SMD transistor 6J U
u101b

Abstract:
Text: DATA SHEET COMPOUND TRANSISTOR _ j f P A HIGH FREQUENCY NPN TRANSISTOR ARRAY 101 FEATURES · · · BUILT-IN ULTRAHIGH FREQUENCY MULTIPLIER: (Each Transistor has fr 9 GHz , transistor array contains six bipolar transistors which have fT 9 GHz. A pplications include a m ultiplier , -pin ceram ic package 8-pin p lastic SOP (225 mil ) H ff a /XPA101G ABSOLUTE MAXIMUM RATINGS (T a = , each transistor . Caution E lectro-static sensitive devices D ocu m e n t No. P 1 0 7 0 6 E J1 V 0 D


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PDF uPA101B 14-pin tPA101G u101b
2010 - transistor smd za

Abstract:
Text: : Single-In-Line Plastic (SIP) Blank: Refer to Data Sheet for Package Type NOTE: If the part number contains , : Commercial, 0°C to +70°C I: Industrial, -25°C to +85°C or -40°C to +85°C (Specified on Data Sheet ) M , Amp, Sensors 3: Interface, Data Communication 4: Analog Component Solutions 5: High Speed Amps , OPTIONAL ELECTRICAL GRADE Boards To Denote Speed or Precision Grading -EC: Enhanced Commercial as , Dual-In-Line Metal Seal (SBDIP) Small Outline Transistor Plastic (SC-70) Ceramic Flatpack Available Small


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PDF JM38510/ 1-888-INTERSIL transistor smd za smd transistor HX 45 smd diode code T7 transistor smd xc smd transistor HX transistor smd xb ceramic pin grid array CPGA INTERSIL CROSS REFERENCE clocks solder wire HMP X40015
2006 - transistor smd za 28

Abstract:
Text: (PLCC) S: DIL Formed TO-5 T: Can Z: Single-In-Line Plastic (SIP) Blank: Refer to Data Sheet for , °C I: Industrial, -25°C to 85°C or -40°C to 85°C (Specified on Data Sheet ) M: Military, -55°C to 125 , , Data Communication 4: Analog Component Solutions 5: High Speed Amps, Switch/MUX, ADCs, DACs, Optical , -T5K: 5,000pc Tape and Reel -Eval: Evaluation Boards OPTIONAL ELECTRICAL GRADE To Denote Speed or , Dual-In-Line Metal Seal (SBDIP) E: Small Outline Transistor Plastic (SC-70) F: Ceramic Flatpack G: Available


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PDF 82CXXX JM38510/ 1-888-INTERSIL transistor smd za 28 transistor smd za solder wire HMP 6 ld SOT-23 g3 smd transistor CDP65C51 smd transistor HX smd transistor HX 45 CD4000 X40015
ua104

Abstract:
Text: DATA SHEET COMPOUND TRANSISTOR uPA104 HIGH FREQUENCY NPN TRANSISTOR ARRAY FEATURES · · · , transistor array for form ation of high speed O R/NOR gates. Its internal tra nsistor configuration and , ,uPA104B-E1 ^uPAI 04G-E1 PACKAGE 14-pin ceramic package 14-pin plastic SOP (225 mil ) - . i 9 Æ E , +125 T stg A bsolute maximum ratings for each transistor . Caution Electro-static sensitive , * M easured by installing a single transistor in a Micro-X package: the value shown is a reference


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PDF uPA104 PA104B: PA104G 14-pin PA104 ua104
Not Available

Abstract:
Text: DATA SHEET COMPOUND TRANSISTOR uPA103 HIGH FREQUENCY NPN TRANSISTOR ARRAY FEATURES · , APPLICATIONS The ¿¿PA103 is a user configurable Silicon bipolar transistor array consisting of a common , ,uPA103B-E1 ,uPA103G-E1 PACKAG E 14-pin ceram ic package 14-pin plastic SO P (225 mil ) a I eH eI , - 5 5 to +200 - 5 5 to +125 A bsolute maximum ratings for each transistor . Caution E , mA * M easured by installing a single transistor in a Micro-X package: the value shown is a


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PDF uPA103 PA103B: PA103G: /iPA103 14-pin PA103 14-pin
Not Available

Abstract:
Text: DATA SHEET NEC COMPOUND TRANSISTOR uPA102 HIGH FREQUENCY NPN TRANSISTOR ARRAY FEATURES · · · TW O BUILT-IN DIFFER EN TIA L AM PLIFIER CIRCUITS: (Each Transistor has fr 9 GHz) OUTSTANDING , a user configurable Silicon b ip o la rtra n sisto r array consisting of two separate differential , ¿iPA102G-E1 PACKAG E 14-pin ceram ic package 14-pin plastic SO P (225 mil ) I IJHki Ü H fl /¿PA102G 10 9 , ·C - 5 5 to +200 - 5 5 to +125 Absolute maximum ratings for each transistor . Caution


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PDF uPA102 PA102B: PA102G: 14-pin PA102
2009 - transistor smd za

Abstract:
Text: : DIL Formed TO-5 T: Can Z: Single-In-Line Plastic (SIP) Blank: Refer to Data Sheet for Package Type , : Commercial, 0°C to +70°C I: Industrial, -25°C to +85°C or -40°C to +85°C (Specified on Data Sheet ) M , , RTC, Clocks, ATE 2: Reference, DCPs, Buffers, Precision Op Amp, Sensors 3: Interface, Data , : Evaluation Boards Tin Lead Finish -Eval*Z: Pb-Free Evaluation OPTIONAL ELECTRICAL GRADE Boards To Denote , Transistor Plastic (SC-70) Ceramic Flatpack Available Small Outline Transistor Plastic (SOT-23) Thin


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PDF JM38510/ 1-888-INTERSIL transistor smd za smd transistor HX SMD transistor Mu S14 SMD SMD TRANSISTOR 1B t CD4000 cross REFERENCE transistor smd za 28 CERAMIC LEADLESS CHIP CARRIER TEPQFN CDP65C51
2006 - maxim naming convention

Abstract:
Text: of the suffix denotes product grade (accuracy, voltage spec, speed, etc.) For example, the first "A " in MAX631ACPA indicates 5% output accuracy. The product's full data sheet details the grades that , our own convention. This includes the original designators for product grade , temperature range , SSOP (Shrink Small Outline Package) 209 mil (14, 16, 20, 24, 28 leads); 300 mil (36 leads) B UCSP , (7mm x 7mm thru 20mm x 20mm) D CERAMIC SIDEBRAZE 300 mil (8, 14, 16, 18, 20 leads); 600 mil (24, 28


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2005 - 22-16 diode smd

Abstract:
Text: ) S: DIL Formed TO-5 T: Can Z: Single-In-Line Plastic (SIP) Blank: Refer to Data Sheet for Package , 70°C I: Industrial, -25°C to 85°C or -40°C to 85°C (Specified on Data Sheet ) M: Military, -55°C to , : Reference, DCPs, Buffers, Precision Op Amp, Sensors 3: Interface, Data Communication 4: Analog Component , Package -Eval: Evaluation Boards OPTIONAL ELECTRICAL GRADE To Denote Speed or Precision Grading as Defined , Outline Transistor Plastic (SC-70) F: Ceramic Flatpack G: Available H: Small Outline Transistor Plastic


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PDF 82CXXX JM38510/ 1-888-INTERSIL 22-16 diode smd cd4000 cmos CERAMIC LEADLESS CHIP CARRIER CLCC intersil cdp65C51 sot 23 code 27A TEPQFN
1998 - Y parameters of transistors

Abstract:
Text: General REQUIREMENTS (%) MIL STD 750 METHOD CONDITIONS STD GRADE GRADE "X"(1) GRADE , parameters of the relevant data sheet Subgroup 3 Steady-state operation life 1027 Electrical , relevant data sheet 2037 the sample shall include a minimum of 3 devices and shall include all wire , 1032 DC parameters of the relevant data sheet Notes 1. Optional for grades "X" and "Y" (minimum , procedures and final operation. Microwave performance is published in the data sheet at a single


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PDF MC3403 2N2219 1N4148 MBC775 Y parameters of transistors power transistor transistors equivalents transistor equivalent table MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT transistor 2N2219 data sheet 1721E50R transistor marking pl y1 marking code transistor MARKING 41B IC 1032 EQUIVALENT
2002 - ask fsk psk

Abstract:
Text: when successful contact or contactless programming of the data array has been completed. Once CB12 is , configuration register has no effect on device timing until the EEPROM data array is programmed (CB12 = 1). , transistor without change. When FSK option is chosen, the encoded data is represented by: a. b. Sets , on Data PP P PSK _2 Change on `1' PP P 2.2.4 PP MEMORY ARRAY LOCK BIT (CB12 , 48 and 64 bits are available by programming the data twice in the array , end-to-end. The column and


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PDF MCRF250 64-bit D-81739 DS21267E* DS21267E-page ask fsk psk DS51115 125 kHz RFID passive tags microid 42750 CB-111 CB10 cb4 contactless MCRF250 rfid attendance system
2002 - ask fsk psk

Abstract:
Text: connections (VA and VB). The modulation transistor damps or undamps the coil voltage when it sends data . The , or contactless programming of the data array has been completed. Once CB12 is set, device , device timing until the EEPROM data array is programmed (CB12 = 1). 2.2.2 DATA ENCODING OPTION , is chosen, the encoded data is fed into the modulation transistor without change. When FSK option , array at the clock rate and generate a serial data stream for modulation. This data stream can be up to


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PDF MCRF200 64-bit D-81739 DS21219G* DS21219G-page ask fsk psk DS51115 RFID FSK RFID reader SOURCE CODE microchip cb4 contactless Antenna Coil 125 kHz RFID design MCRF200 Manchester c source code using PIC FDXB CB10 RFID PSK reader SOURCE CODE ,microchip
1998 - PD16877

Abstract:
Text: . For actual design-in, refer to the latest publications of data sheet , etc., for the most up-to-date , Pamphlet G11903EJ5V0PF00 7 NEC INTELLIGENT POWER MOS LSI Monolithic Power MOS FET Array Series Products Part Number Function µPA1600CX MOS FET array VO (V) IO (A/unit) PT (W) No. of chs , µPA1600GS MOS FET array inverter µPA1601CX MOS FET array inverter µPA1601GS MOS FET array inverter µPA1602CX MOS FET array non-inverter µPA1602GS MOS FET array non-inverter µPA1603CX MOS FET array


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PDF G11903EJ5V0PF00 PD16877 PD16814 UPA1600CX uPD16833AGS-9JH UPA1602GS MOS FET Array NEC SEMICONDUCTOR SELECTION GUIDE 1999,NEC ELECTRONICS MIL Standard uPD16877MA-6A5 fdd motor driver
mpa1601

Abstract:
Text: DATA SHEET NEC -Ä - V DESCRIPTION COMPOUND FIELD EFFECT POWER TRANSISTOR uPA1601 MONOLITHIC POWER MOS FET ARRAY The u/PA1601 is Monolithic N-channel Power MOS FET A , /¿PA1601CX ¿¿PA1601GS Package 16-Pin DIP 16-Pin SOP Quality Grade Standard Standard Equivalent Circuits (1 unit) Please re fe rto "Q u a lity grade on NEC S em iconductor Devices" (Docu m ent n um ber IEI-1209) published by NEC C orporation to know the specification o f q u a lity grade on the devices and its recom m


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PDF uPA1601 u/PA1601 mpa1601 PA1601 IEI-1207 transistor SMD 601 uPA1601GS IEI-1213 Ua1601 io 1207 NEC 1601 fet P16GM-50-300B-3
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