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Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
LT5568EUF Linear Technology RF/Microwave Modulator/Demodulator, 700 MHz - 1050 MHz RF/MICROWAVE I/Q MODULATOR, 4 X 4 MM, PLASTIC, MO-220WGGC, QFN-16
LT5568EUF#TR Linear Technology RF/Microwave Modulator/Demodulator, 700 MHz - 1050 MHz RF/MICROWAVE I/Q MODULATOR, 4 X 4 MM, PLASTIC, MO-220WGGC, QFN-16
LT5534ESC6PBF Linear Technology RF/Microwave Detector, 50 MHz - 3000 MHz RF/MICROWAVE LINEAR DETECTOR, LEAD FREE, PLASTIC, SC-70, MO-203AB, 6 PIN
LTC5508ESC6-#PBF Linear Technology RF/Microwave Detector, 300 MHz - 7000 MHz RF/MICROWAVE LINEAR DETECTOR, 12 dBm INPUT POWER-MAX, PLASTIC, SC6, SC-70, 6 PIN
LT5534ESC6TRPBF Linear Technology RF/Microwave Detector, 50 MHz - 3000 MHz RF/MICROWAVE LINEAR DETECTOR, LEAD FREE, PLASTIC, SC-70, MO-203AB, 6 PIN
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C

MICROWAVE TRANSISTOR Datasheets Context Search

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ic 4027

Abstract: 3019 npn transistor transistor 30 j 124 7498 ic Silicon Bipolar Transistor 35 MICRO-X transistor s parameters noise B12V105 ic 4027 information microwave transistor SOT-23J
Text: BIPOLARICS, INC. Part Number B12V105 NPN LOW NOISE SILICON MICROWAVE TRANSISTOR PRODUCT DATA , Number B12V105 NPN LOW NOISE SILICON MICROWAVE TRANSISTOR PRODUCT DATA SHEET TYPICAL S PARAMETERS , Number B12V105 NPN LOW NOISE SILICON MICROWAVE TRANSISTOR PRODUCT DATA SHEET TYPICAL S PARAMETERS , , INC. Part Number B12V105 NPN LOW NOISE SILICON MICROWAVE TRANSISTOR 04 Package: 0.145 , . Part Number B12V105 NPN LOW NOISE SILICON MICROWAVE TRANSISTOR 02 Package: SOT-23 02J Package


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PDF B12V105 B12V105 OT-23, OT143, unencaps143 ic 4027 3019 npn transistor transistor 30 j 124 7498 ic Silicon Bipolar Transistor 35 MICRO-X transistor s parameters noise ic 4027 information microwave transistor SOT-23J
GHZ micro-X Package

Abstract: micro-x transistor npn silicon low noise microwave transistor BRF60292 BRF60286 BRF60285 BRF60284 BRF60235 BRF60214 BRF60202J
Text: BIPOLARICS, INC. Part Number BRF602 NPN LOW NOISE SILICON MICROWAVE TRANSISTOR PRODUCT DATA , 2 BIPOLARICS, INC. Part Number BRF602 NPN LOW NOISE SILICON MICROWAVE TRANSISTOR , Part Number BRF602 BIPOLARICS, INC. NPN LOW NOISE SILICON MICROWAVE TRANSISTOR BRF60202J , NPN LOW NOISE SILICON MICROWAVE TRANSISTOR BRF60235 Package Style 35: Micro-X 0.085" Hermetic , APPLICATIONS: Bipolarics' BRF602 is a high performance silicon bipolar transistor intended for use in low


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PDF BRF602 BRF602 BRF602an OT-23, OT-143, BRF60202 OT-23 BRF60214 BRF60292 OT-143 GHZ micro-X Package micro-x transistor npn silicon low noise microwave transistor BRF60292 BRF60286 BRF60285 BRF60284 BRF60235 BRF60214 BRF60202J
GHZ micro-X Package

Abstract: MICROWAVE TRANSISTOR MICRO-X Micro-X ceramic npn Silicon Bipolar Transistor 35 MICRO-X micro-x transistor BRF61004 BRF61035 BRF61002 PACKAGE STYLE 51
Text: BIPOLARICS, INC. Part Number BRF610 NPN LOW NOISE SILICON MICROWAVE TRANSISTOR PRODUCT DATA , PAGE 2 BIPOLARICS, INC. Part Number BRF610 NPN LOW NOISE SILICON MICROWAVE TRANSISTOR , BRF610 NPN LOW NOISE SILICON MICROWAVE TRANSISTOR BRF61002J PackageStyle 02J: SOT-23J 0.30 0.51 , APPLICATIONS: Bipolarics' BRF610is a high performance silicon bipolar transistor intended for use in low noise application at VHF, UHF and microwave frequencies. High performance low noise performance can be


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PDF BRF610 BRF610is BRF610an OT-23, OT-143, BRF61002 OT-23 BRF61014 BRF61092 OT-143 GHZ micro-X Package MICROWAVE TRANSISTOR MICRO-X Micro-X ceramic npn Silicon Bipolar Transistor 35 MICRO-X micro-x transistor BRF61004 BRF61035 BRF61002 PACKAGE STYLE 51
62 01071

Abstract: 3019 Transistor BRF510 Bipolarics* BRF510 03-198 transistor 1047 IC 4027 TRANSISTOR 4841 ic 7413 datasheet c 3198 transistor
Text: BIPOLARICS, INC. Part Number BRF510 NPN LOW NOISE SILICON MICROWAVE TRANSISTOR PRODUCT DATA , BIPOLARICS, INC. Part Number BRF510 NPN LOW NOISE SILICON MICROWAVE TRANSISTOR PRODUCT DATA SHEET , SILICON MICROWAVE TRANSISTOR PRODUCT DATA SHEET TYPICAL S PARAMETERS: BIAS CONDITION: S-MATRIX: V , BIPOLARICS, INC. Part Number BRF510 NPN LOW NOISE SILICON MICROWAVE TRANSISTOR PRODUCT DATA SHEET , SILICON MICROWAVE TRANSISTOR PRODUCT DATA SHEET TYPICAL S PARAMETERS: BIAS CONDITION: VCE = 8 V, I C =


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PDF BRF510 BRF510is BRF510an OT-23, OT-143, unencapsulate74 62 01071 3019 Transistor BRF510 Bipolarics* BRF510 03-198 transistor 1047 IC 4027 TRANSISTOR 4841 ic 7413 datasheet c 3198 transistor
Silicon Bipolar Transistor 35 MICRO-X

Abstract: B30V1160 B30V140 Silicon Bipolar Transistor MICRO-X
Text: BIPOLARICS, INC. Part Number B30V140 SILICON MICROWAVE POWER TRANSISTOR PRODUCT DATA SHEET , POWER SILICON MICROWAVE TRANSISTOR Package Style 35: Micro-X 0.085" Ceramic Package Style 70: 0.070 , PAGE 3 BIPOLARICS, INC. Part Number B30V140 MEDIUM POWER SILICON MICROWAVE TRANSISTOR Package , SILICON MICROWAVE TRANSISTOR Package Style 4SM: 85 mil Plastic,Micro-X Surface Mount Package Style , silicon bipolar transistor intended for linear power applications at frequencies of 0.5 to 2.6 GHz


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PDF B30V140 B30V140 B30V180 B30V1160 Silicon Bipolar Transistor 35 MICRO-X Silicon Bipolar Transistor MICRO-X
Diode Equivalent 1n4148

Abstract: 2n2219 equivalent transistor equivalent transistor R5 2n2219 equivalent diode 1n4148 equivalent MICROWAVE TRANSISTOR resistor equivalent 2N2219 equivalent diode for 1n4148 transistor 1N4148
Text: Philips Semiconductors Product specification Microwave Transistors APPLICATION INFORMATION COMPONENT A D.U.T. TR D C 1,C 2 R1 R2, R3, R5, R6 R4 Rp Rb> Rc. Re. Rx General DESCRIPTION amplifier microwave transistor transistor diode tantalum capacitor resistor resistor resistor resistor resistor VALUE DIMENSIONS TYPE NUMBER 1/4 MC3403 or equivalent 2N2219 or equivalent 1N4148 or , adapted to lc of the D.U.T. Fig.3 Bias circuit for a class-A linear microwave transistor . 1997 Mar


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PDF MC3403 2N2219 1N4148 Diode Equivalent 1n4148 2n2219 equivalent transistor equivalent transistor R5 2n2219 equivalent diode 1n4148 equivalent MICROWAVE TRANSISTOR resistor equivalent 2N2219 equivalent diode for 1n4148 transistor 1N4148
1998 - SOT333

Abstract: SOT423 sot468 TO metal package aluminum kovar Transistor Packages thermal compound wps II SOT439 sot262 NI29 SOT443
Text: microwave transistor packages RF AND MICROWAVE TRANSISTOR PACKAGES handbook, halfpage The packages , /Isolators. 4.1 Basics of RF and microwave transistor packages In general, two (the base/gate and , and microwave transistor packages material since it combines good thermal conductivity (250 W/mK , transistor and power amplifier fundamentals 4.5 RF and microwave transistor packages Hermetic , RF transmitting transistor and power amplifier fundamentals 4.7 RF and microwave transistor


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1998 - mount chip transistor 332

Abstract: SOT-23 TRANSISTOR 548 MA4T64500
Text: Silicon Bipolar High fT Low Noise Microwave Transistor MA4T645 Series MA4T645 Series , Bipolar High fT Low Noise Microwave Transistor MA4T645 Series Absolute Maximum Ratings MA4T645 , Bipolar High fT Low Noise Microwave Transistor MA4T645 Series Electrical Specifications @ +25°C , Bipolar High fT Low Noise Microwave Transistor MA4T645 Series Typical Scattering Parameters in the , subject to change without notice. Silicon Bipolar High fT Low Noise Microwave Transistor MA4T645


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PDF MA4T645 mount chip transistor 332 SOT-23 TRANSISTOR 548 MA4T64500
73412

Abstract: CHIP transistor 348 NE64535 npn silicon low noise microwave transistor NE24318 NE64500 NE02135 NE889 NE68039 p08c
Text: . 3-35 NPN Medium Power Microwave Transistor . 3-39 NPN Medium Power Microwave Transistor , . 3-71 NPN Silicon Microwave Transistor . 3-77 NPN Silicon Microwave Transistor , 3-157 3-157 3-173 NPN Silicon Microwave Transistor


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PDF NE46134 NE85634 NE46734 NE85634 NE46134 NE85619 NE68119 73412 CHIP transistor 348 NE64535 npn silicon low noise microwave transistor NE24318 NE64500 NE02135 NE889 NE68039 p08c
2000 - GE Transistor Manual

Abstract: transistor k 316 35820 transistor circuit design
Text: Microwave Transistor Bias Considerations Application Note 944-1 Introduction Often the least considered factor in microwave transistor circuit design is the bias network. Considerable effort is spent , same resistor topology is used to bias the transistor . Since the cost per dB of microwave gain or , to dc bias considerations. Microwave transistor amplifier design requires biasing the transistor , feedback is used for dc stability. At microwave frequencies the bypass capacitor becomes a problem since a


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PDF 5988-0424EN GE Transistor Manual transistor k 316 35820 transistor circuit design
2007 - GE Transistor Manual

Abstract: cutler 35860 5988-0424EN transistor circuit transistor circuit design TRANSISTOR hFE-100
Text: Microwave Transistor Bias Considerations Application Note 944-1 Introduction Often the least considered factor in microwave transistor circuit design is the bias network. Considerable effort is spent , same resistor topology is used to bias the transistor . Since the cost per dB of microwave gain or noise , bias considerations. Microwave transistor amplifier design requires biasing the transistor into , used for dc stability. At microwave frequencies the bypass capacitor becomes a problem since a good RF


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PDF 5988-0424EN GE Transistor Manual cutler 35860 transistor circuit transistor circuit design TRANSISTOR hFE-100
nd 16 TRANSISTOR SOT-23

Abstract: TRANSISTOR b 772 p sot-23 rks MA4T64500 RKS SOT23 mount chip transistor 332 SOT-143 717 transistor TE 901 equivalent MA4T645 MA4T64539
Text: High fT Low Noise Microwave Transistor MA4T645 Series Absolute Maximum Ratings MA4T645 Series , . AMR Silicon Bipolar High fT Low Noise Microwave Transistor MA4T645 Series Electrical , Microwave Transistor MA4T645 Series Typical Scattering Parameters in the Micro-X Package (Cont'd , . AMR Silicon Bipolar High fT Low Noise Microwave Transistor MA4T645 Series Typical , Microwave Transistor MA4T645 Series Typical Performance Curves (Cont'd) Nom inal Output Power at the


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PDF MA4T645 OT-23 OT-143 MA41344) nd 16 TRANSISTOR SOT-23 TRANSISTOR b 772 p sot-23 rks MA4T64500 RKS SOT23 mount chip transistor 332 SOT-143 717 transistor TE 901 equivalent MA4T64539
bfr14a

Abstract: Transistor BFR14a
Text: BFR 14A NPN Silicon planar microwave transistor BFR14A is an expitaxial NPN silicon planar microwave transistor . Due to its low noise figure high amplification and low distortion it is particularly suitable for use in low-noise pre-stages, broad-band, IF and radar amplifiers up to 5 GHz as well as for low-output oscillator circuits. The strip-line ceramic package is particularly adapted for use in thin and thick film technology and permits use in space engineering. The emitter terminal is connected to the


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PDF BFR14A Q62702-F416 BFR14A Transistor BFR14a
Not Available

Abstract: No abstract text available
Text: MS2205 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS F eatures • • • • • • 1025-1150 MHz GOLD METALLIZATION INFINITE VSWR CAPABILITY @ RATED CONDITIONS Pout = 4 W MINIMUM GP= 10 dB COMMON BASE CONFIGURATION .280 2LFL (M220) Epoxy Sealed DE SCRIPTIO N: The MS2205 is a common base, silicon NPN microwave transistor designed for Class C driver applications under DME or IFF pulse conditions. This device is capable of withstanding an infinite load VSWR at any


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PDF MS2205 MS2205 400mW
2008 - MS2205

Abstract: No abstract text available
Text: MS2205 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS Features · · · · · · 1025-1150 MHz GOLD METALLIZATION INFINITE VSWR CAPABILITY @ RATED CONDITIONS Pout = 4 W MINIMUM GP= 10 dB COMMON BASE CONFIGURATION .280 2LFL (M220) Epoxy Sealed DESCRIPTION: The MS2205 is a common base, silicon NPN microwave transistor designed for Class C driver applications under DME or IFF pulse conditions. This device is capable of withstanding an infinite load VSWR at any phase angle


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PDF MS2205 MS2205 400mW
2003 - MS2205

Abstract: No abstract text available
Text: MS2205 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS Features · · · · · · 1025-1150 MHz GOLD METALLIZATION INFINITE VSWR CAPABILITY @ RATED CONDITIONS Pout = 4 W MINIMUM GP= 10 dB COMMON BASE CONFIGURATION .280 2LFL (M220) Epoxy Sealed DESCRIPTION: The MS2205 is a base emitter, silicon NPN, microwave transistor designed for Class C driver applications under DME or IFF pulse conditions. This device is capable of withstanding an infinite load VSWR at any phase


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PDF MS2205 MS2205 400mW
2002 - Not Available

Abstract: No abstract text available
Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MSC1015MP RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS Features · · · · · · · 1025-1150 MHz 50 VOLTS POUT = 15 WATTS GP= 10 dB MINIMUM CLASS C OPERATION INFINITE VSWR CAPABILITY @ RATED CONDITIONS COMMON BASE CONFIGURATION DESCRIPTION: The MSC1015MP is a common base, silicon NPN, microwave transistor designed for Class C driver applications under DME or IFF pulse conditions. This device is capable


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PDF MSC1015MP MSC1015MP
2002 - MS2204

Abstract: No abstract text available
Text: MS2204 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS Features · · · · · · · 1090 MHz 18 VOLTS POUT = 0.6 WATTS GP = 10.8 dB MINIMUM CLASS A OPERATION INFINITE VSWR CAPABILITY @ RATED CONDITIONS COMMON EMITTER CONFIGURATION DESCRIPTION: DESCRIPTION: The MS2204 is a common emitter, silicon NPN, microwave transistor designed for Class A driver applications under DME or IFF pulse conditions. This device is capable of withstanding an infinite load VSWR at any phase angle


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PDF MS2204 MS2204
2001 - Not Available

Abstract: No abstract text available
Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MS2204 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS Features · · · · · · · 1090 MHz 18 VOLTS POUT = 0.6 WATTS GP = 10.8 dB MINIMUM CLASS A OPERATION INFINITE VSWR CAPABILITY @ RATED CONDITIONS COMMON EMITTER CONFIGURATION DESCRIPTION: The MS2204 is a common emitter, silicon NPN, microwave transistor designed for Class A driver applications under DME or IFF pulse conditions. This


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PDF MS2204 MS2204
2000 - Not Available

Abstract: No abstract text available
Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MS2290 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS Features · · · · · · · 1090 MHz 18 VOLTS Pout = 0.2 WATTS GP= 10 dB MINIMUM CLASS A OPERATION INFINITE VSWR CAPABILITY @ RATED CONDITIONS COMMON EMITTER CONFIGURATION DESCRIPTION: The MS2290 is a common emitter, silicon NPN, microwave transistor designed for Class A driver applications under DME or IFF pulse conditions. This


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PDF MS2290 MS2290 100mA
B20V180

Abstract: B20V1160 B20V140
Text: BIPOLARICS, INC. Part Number B20V140 SILICON MICROWAVE POWER TRANSISTOR PRODUCT DATA SHEET FEATURES: DESCRIPTION AND APPLICATIONS: · High Output Power 27.0 dBm, P1dB @ 1.0 GHz · High Gain Bandwidth Product f = 6.0 GHz @ IC = 100 mA t Bipolarics' B20V140 is a high performance, low cost silicon bipolar transistor intended for linear power applications at frequencies of 0.5 to 2.6 GHz , POWER SILICON MICROWAVE TRANSISTOR Package Style 85: 0.085" Ceramic Micro-X Package Style 70: 0.070


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PDF B20V140 B20V140 B20V180 B20V1160
2002 - MS2290

Abstract: No abstract text available
Text: MS2290 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS Features · · · · · · · 1090 MHz 18 VOLTS Pout = 0.2 WATTS GP= 10 dB MINIMUM CLASS A OPERATION INFINITE VSWR CAPABILITY @ RATED CONDITIONS COMMON EMITTER CONFIGURATION DESCRIPTION: DESCRIPTION: The MS2290 is a common emitter, silicon NPN, microwave transistor designed for Class A driver applications under DME or IFF pulse conditions. This device is capable of withstanding an infinite load VSWR at any phase angle


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PDF MS2290 MS2290 100mA
1998 - Y parameters of transistors

Abstract: power transistor transistors equivalents transistor equivalent table MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT transistor 2N2219 data sheet 1721E50R MARKING 41B y1 marking code transistor transistor marking pl similar 2N2219 transistor
Text: TYPE NUMBER microwave transistor TR DIMENSIONS 1/4 MC3403 or equivalent note 1 2N2219 , . C2 R3 Re MBC775 Fig.22 Bias circuit for a class-A linear microwave transistor . 1998 , Philips Semiconductors RF & Microwave Power Transistors General MARKING CODES FOR RF POWER TRANSISTORS MARKING CODES FOR MICROWAVE TRANSISTORS For the purposes of matched pair applications, RF , 8). The microwave transistors in this book are normally marked with manufacturer's name or


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PDF MC3403 2N2219 1N4148 MBC775 Y parameters of transistors power transistor transistors equivalents transistor equivalent table MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT transistor 2N2219 data sheet 1721E50R MARKING 41B y1 marking code transistor transistor marking pl similar 2N2219 transistor
800BLY

Abstract: No abstract text available
Text: N-P-N SILICON OAARI V MICROWAVE TRANSISTOR OWDL1 (Dev. No.) DEVELOPMENT SAMPLE DATA N-P-N silicon transistor intended for use in microwave power amplifiers. QUICK REFERENCE DATA V max. CES 55 V max. 0 5 A P„ , max. T = 25°C tot mb 5 0 W T , = 75°C mb 3 0 W Performance in a common emitter class B amplifier V = 28V, f = 2.0GHz 00 P Load power L 1 0 W Pp Drive power (max.) 0 32 W T) Efficiency 30 % OUTLINE AND DIMENSIONS Millimetres Min. Nom. Max. 0Hx W r 0j 8 32 UNC


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PDF 800BLY
2006 - BFU725F

Abstract: germanium transistors NPN SOT343F
Text: SiGeC microwave NPN transistor BFU725F A perfect match up to 20 GHz Meet the trend towards higher frequencies. With NXP Semiconductors' latest SiGeC microwave NPN transistor BFU725F, you get high , microwave applications The NPN microwave transistor BFU725F delivers an unbeatable blend of high , amplifier (LNA) for microwave communications systems Ñ 2nd stage LNA and mixer in direct broadcast , its high cut-off frequency, it's your ideal solution for microwave applications in the 10 GHz to 30


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PDF BFU725F BFU725F, OT343F BFU725F germanium transistors NPN SOT343F
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