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MIB57T-J datasheet (2)

Part Manufacturer Description Type PDF
MIB57T-J Micro Electronics INFRARED EMITTING DIODE Scan PDF
MIB57T-J Micro Electronics Semiconductor Device Data Book Scan PDF

MIB57T-J Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
BOX69477

Abstract:
Text: MIB57T-J INFRARED EMITTING DIODE DESCRIPTION MIB57T-J is a GaAlAs infrared emitting diode molded in clear plastic 5mm diameter package. With the lensing effect of the package, it has an very narrow radiation angle measured from the optical axis to the half power point. MEB57T-J is spectrally matched to the PIN photo diode ML303B. No scale Tol. : +/-0.3mm ABSOLUTE MAXIMUM RATINGS Forward Current (Continuous) Pulse Forward Current Reverse Voltage (Continuous) Power Dissipation Operating Temperature Range


OCR Scan
PDF MIB57T-J MEB57T-J ML303B. 10\iS, BOX69477, 100mA 175mW BOX69477 ML303B
ML309

Abstract:
Text: 20 40 40 T-1 3/4 standard 1" lead 1-13 MIB57T-J MIB57T-K 940 940 2.62 2.62 20 20 2.0 2.0 100 100 20


OCR Scan
PDF MI31T MI31TA MI32T MI32TA MI37T MIB37T MI38T MIB38T 1-45a 1-45b ML309 MI51T
ML309

Abstract:
Text: MICRO ELECTRONICS LTD SIE D bOT17flfi GOÜ1G1S TTH MEHK Infrared Emitting Diodes T -4 I-1 3 TYPE NO. MI31T MI31TA MI32T MI32TA MI37T MIB37T MI38T MIB38T - MI51T MI51TA - MIB51T MIB51TA MIB57T-J MIB57T-K Àp (nm) 940 880 940 880 940 940 940 940 940 880 940 880 940 940 p 0 TYP (mW) 0.5 2.8 0.5 2.8 2.0 2.0 2.0 2.0 1.0 5.0 4.0 8.0 2.62 2.62 1 (mA) 20 20 20 20 20 20 20 20 20 50 20 50 20 20 V f MAX (V) 1.6 1.8 1.6 1.8 2.0 2.0 2.0 2.0 1.6 1.8 1.6 1.8 2.0 2.0 1 (mA) 20 20 20 20 100


OCR Scan
PDF bOT17flfi MI31T MI31TA MI32T MI32TA MI37T MIB37T MI38T MIB38T MI51T ML309
850 nm Infrared Emitting Diode,

Abstract:
Text: UKU 1V1JLJÖD / 1 -J INFRARED EMITTING DIODE DESCRIPTION MIB57T-J is a GaAlAs infrared emitting diode molded in clear plastic 5mm diameter package. With the lensing effect of the package, it has an very narrow radiation angle measured from the optical axis to the half power point. ABSOLUTE MAXIMUM RATINGS 04.98 r(0.196) • Ai! dimension in mm(inch) -2.54(0.1) • No Scale • To!. : +,'-0.3mm Forward Current (Continuous) 100mA Pulse Forward Current 1A* Reverse Voltage (Continuous) 6V


OCR Scan
PDF MIB57T-J 100mA 175mW 10/xs, -20mA 850 nm Infrared Emitting Diode,
2SA532

Abstract:
Text: MH8500 MH8700 MI31T MI31TA MI32T MI32TA MI33T MI38T MI51T MI51TA MIB33T MIB38T MIB51T MIB51TA MIB57T-J


OCR Scan
PDF 057-2G 1611G 1620G 1621-2G 1623G 1641G 1N4001 1N4002 1N4004 1N4005 2SA532 BC109 BC184 BC549 BC317 2SC734 Y BC159 8 MS181A BC357 TTP31A 2SC876 ML78M06A
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