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MIB51T datasheet (4)

Part Manufacturer Description Type PDF
MIB51T Micro Electronics INFRARED EMITTING DIODE Scan PDF
MIB51T Micro Electronics Semiconductor Device Data Book Scan PDF
MIB51TA Micro Electronics INFRARED EMITTING DIODE Scan PDF
MIB51TA Micro Electronics Semiconductor Device Data Book Scan PDF

MIB51T Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
11851

Abstract: MIB51T
Text: CRO MIB51T INFRARED EMITTING DIODE DESCRIPTION MIB51T is GaAlAs infrared emitting diode molded in T-l 3/4 standard 5mm diameter clear transparent lens. ABSOLUTE MAXIMUM RATINGS Forward Current (Continuous) Pulse Forward Current Reverse Voltage (Continuous) Power Dissipation Operating Temperature Range Lead Soldering Temperature (1/16" from body) * Pulse Width = lOfxs, Duty Ratio = 0.01. 87 (0.34) 1.0 "(0.04) 04.98 '(0.196) 0.75(0.03)_ max. 0.5 _ (0.02) 25.3 (0.99) min. 0.5 (0.02


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PDF MIB51T MIB51T 100mA 160mW 11851
MIB51T

Abstract: No abstract text available
Text:  MIB51T INFRARED EMITTING DIODE DESCRIPTION MIB51T is GaAlAs infrared emitting diode molded in T-l 3/4 standard 5mm diameter clear transparent lens. ABSOLUTE MAXIMUM RATINGS Forward Current (Continuous) Pulse Forward Current Reverse Voltage (Continuous) Power Dissipation Operating Temperature Range Lead Soldering Temperature (1/16" from body) Pulse Width = 10/is, Duty Ratio = 0.01. 04.98 10.196) 87 (0.34) 1.0 All dimension in mm(inch) No Scale Toi. : +/-0.3mm 100mA 1A* 6V 160mW -25 to


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PDF MIB51T MIB51T 10/is, 100mA 160mW 4351G
MIB51T

Abstract: No abstract text available
Text: MIB51T INFRARED EMITTING DIODE DESCRIPTION MIB51T is GaAlAs infrared emitting diode molded in T-l 3/4 standard 5mm diameter clear transparent lens. ABSOLUTE MAXIMUM RATINGS Forward Current (Continuous) Pulse Forward Current Reverse Voltage (Continuous) Power Dissipation Operating Temperature Range Lead Soldering Temperature (1/16" from body) 04.98 (0.196) 8.7 (0.34) 1.0 AH dimension in mm{inch) No Scale Toi. : +/-0.3mm 100mA 1A* 6V 160mW -25 to +85°C 260°C for 5 sec. Pulse Width = 10/xs, Duty Ratio


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PDF MIB51T 100mA 160mW 10/xs,
ML309

Abstract: No abstract text available
Text: MICRO ELECTRONICS LTD SIE D bOT17flfi GOÜ1G1S TTH MEHK Infrared Emitting Diodes T -4 I-1 3 TYPE NO. MI31T MI31TA MI32T MI32TA MI37T MIB37T MI38T MIB38T - MI51T MI51TA - MIB51T MIB51TA MIB57T-J MIB57T-K Àp (nm) 940 880 940 880 940 940 940 940 940 880 940 880 940 940 p 0 TYP (mW) 0.5 2.8 0.5 2.8 2.0 2.0 2.0 2.0 1.0 5.0 4.0 8.0 2.62 2.62 1 (mA) 20 20 20 20 20 20 20 20 20 50 20 50 20 20 V f MAX (V) 1.6 1.8 1.6 1.8 2.0 2.0 2.0 2.0 1.6 1.8 1.6 1.8 2.0 2.0 1 (mA) 20 20 20 20 100


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PDF bOT17flfi MI31T MI31TA MI32T MI32TA MI37T MIB37T MI38T MIB38T MI51T ML309
ML309

Abstract: No abstract text available
Text: 1-62 1-11 1-15 1-16 1-16 MI31T MI31TA MI32T MI32TA MI33T MIB33T MI38T MIB38T MI51T MI51TA MIB51T MIB51TA M1B57T-J MIB57T-K 940 880 940 880 940 940 940 940 940 880 940 880 940 940 0 3.2mm 0.69" lead


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PDF MI31T MI31TA MI32T MI32TA MI33T MIB33T MI38T MIB38T MI51T MI51TA ML309
ML309

Abstract: MIB37T MI51T MI38T MI37T MI32TA MI32T MI31TA MI31T MIB51T
Text: 1.6 1.8 20 20 50 50 T-1 3/4 standard 0.83" lead 1-12 MIB51T MIB51TA 940 880 4.0 8.0 20 50 1.6 1.8 20


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PDF MI31T MI31TA MI32T MI32TA MI37T MIB37T MI38T MIB38T 1-45a 1-45b ML309 MI51T MIB51T
Not Available

Abstract: No abstract text available
Text: Diodes TYPE NO. M I3JT MI31TA MI32T MI32TA MI33T MIB33T M I38T MIB38T MI51T M151TA MIB51T MIB51TA M


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PDF MOGB517W MSB557D MSB557TA MSB557DA MOB557D MOB557DR MGB557D MSB558DA MSB559TA
2SA532

Abstract: BC109 BC184 BC549 BC317 2SC734 Y BC159 8 MS181A BC357 TTP31A 2SC876 ML78M06A
Text: MH8500 MH8700 MI31T MI31TA MI32T MI32TA MI33T MI38T MI51T MI51TA MIB33T MIB38T MIB51T MIB51TA MIB57T-J


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PDF 057-2G 1611G 1620G 1621-2G 1623G 1641G 1N4001 1N4002 1N4004 1N4005 2SA532 BC109 BC184 BC549 BC317 2SC734 Y BC159 8 MS181A BC357 TTP31A 2SC876 ML78M06A
MI51TA

Abstract: MIB51TA ncl 058 hx 002
Text: Mm p^ MI51TA | m^ B * m^m MIB51TA g ■WfK^^ ■■INFRARED Ivrxv " DESCRIPTION MI51TA & MIB51TA are GaAlAs infrared emitting diode molded T-l 3/4 standard 5mm diameter clear plastic package, with the lensing effect of the package, and MIB51TA with cup type leadframe. ABSOLUTE MAXIMUM RATINGS , = 0.01. ELECTRO-OPTICAL CHARACTERISTICS (Ta=25°C) PARAMETER SYMBOL MI51TA MIB51TA UNIT , I—-—¡-2.54(0.1) MIB51TA I i 8.7 (0.34) 1.0 (0.04) 04.98 (0.196) T 0.75(0.03)^r max. ÌJ -H—e


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PDF MI51TA MIB51TA MIB51TA MI51TA ncl 058 hx 002
MI51TA

Abstract: MIB51TA em4070
Text: Mn ^^¡^ p^ MI51TA I W ^ ■M W MIB51TA g ■W/K^^ ■■INFRARED 1 ^^ |\ ^^ EM7Zl DESCRIPTION MI51TA & MIB51TA are GaAlAs infrared emitting diode molded T-l 3/4 standard 5mm diameter clear plastic package, with the lensing effect of the package, and MIB51TA with cup type leadframe. ABSOLUTE , , Duty Ratio = 0.01. ELECTRO-OPTICAL CHARACTERISTICS (Ta=25°C) PARAMETER SYMBOL MI51TA MIB51TA UNIT , I—-—¡-2.54(0.1) MIB51TA I i 8.7 (0.34) 1.0 (0.04) 04.98 (0.196) T 0.75(0.03)^r max. ÌJ -H—e


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PDF MI51TA MIB51TA MIB51TA MI51TA em4070
MI51TA

Abstract: MIB51TA
Text: MIS ITA MIB51TA INFRARED EMITTING DIODE DESCRIPTION MI51TA & MIB51TA are GaAlAs infrared emitting diode molded T-l 3/4 standard 5mm diameter clear plastic package, with the lensing effect of the package, and MIB51JA with cup type leadframe. ABSOLUTE MAXIMUM RATINGS Forward Current (Continuous) 100mA Pulse Forward Current 1 A* Reverse Voltage (Continuous) 6V Power Dissipation 180mW Operating Temperature Range , , Duty Ratio = 0.01. ELECTRO-OPTICAL CHARACTERISTICS (Ta=25°C) PARAMETER SYMBOL MI5ÌTA MIB51TA UNIT


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PDF MIB51TA MI51TA MIB51JA 100mA 180mW MI51TA
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