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MI51T datasheet (6)

Part Manufacturer Description Type PDF
MI51T Micro Electronics INFRARED EMITTING DIODE Scan PDF
MI51T Micro Electronics Semiconductor Device Data Book Scan PDF
MI51TA Micro Electronics INFRARED EMITTING DIODE Scan PDF
MI51TA Micro Electronics Semiconductor Device Data Book Scan PDF
MI51TA-2 Micro Electronics INFRARED EMITTING DIODE Scan PDF
MI51TA-3 Micro Electronics INFRARED EMITTING DIODE Scan PDF

MI51T Datasheets Context Search

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a106 diode

Abstract: MI51T diode A106
Text: CRO DESCRIPTION MI51T is GaAlAs infrared emitting diode molded in T-l 3/4 standard 5mm diameter clear transparent lens. ABSOLUTE MAXIMUM RATINGS Forward Current (Continuous) Pulse Forward Current Reverse Voltage (Continuous) Power Dissipation Operating Temperature Range Lead Soldering Temperature (1/16" from body) * Pulse Width = lOpts, Duty Ratio = 0.01. MI51T INFRARED EMITTING DIODE , (0.06) COLLECTOR "7 FOR MI51T 100mA 1A* 5V 75mW -25 to +85°C 260°C for 5 sec. ELECTRO-OPTICAL


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PDF MI51T MI51T 100mA a106 diode diode A106
MI51T

Abstract: No abstract text available
Text: MI51T INFRARED EMITTING DIODE iw«mi:j:ì}wwìwwwì DESCRIPTION MI51T is GaAlAs infrared emitting diode molded in T-l 3/4 standard 5mm diameter clear transparent lens. ABSOLUTE MAXIMUM RATINGS Forward Current (Continuous) Pulse Forward Current Reverse Voltage (Continuous) Power Dissipation Operating Temperature Range Lead Soldering Temperature (1/16" from body) #4.98(0.196) 05.« <0.232) 8,7(0.34) 19.0<0.75> -MIN, • All dimension in mm(tnch) • No Scale • Toi. : +/-0.3mm CATHOÜET 2.54(0,1> t.5(0.06


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PDF MI51T 100mA 10/xs, 4351G
Not Available

Abstract: No abstract text available
Text: MI51T C R INFRARED EM ITTING DIODE O «4.98(0.196) DESCRIPTION 0.5< .Q Q 2> MI51T is GaAlAs infrared emitting diode molded in T-l 3/4 standard 5mm diameter clear transparent lens. r *5.«! r 1.0(0.04) I i.3<0.05) 1 0.76 1 <0.03) <.i6 0 ) Ut06<0.04> - LQ Q 4 < .Q > ■! 0.64 <0.025> 0.62(0.024) i$.0<0.75> . MIN. 0.62 _ (0.034) • • AÎÏ dimension in mm(inch) No Scaie Toi. : +/-0.3mm CATHQgg- i


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PDF MI51T MI51T
Not Available

Abstract: No abstract text available
Text: ) MIN. 0.62 _ <0.024) 1.5(0.06) . CATHODE COLLECTOR FOR MI51T 2.54(0. • • â


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PDF MSGK51W MI51T
MI51T

Abstract: No abstract text available
Text: ) W 1.3(0.05) 1—1.06(0.04) 19.0(0.75) MIN. tt 1.5(0.06) . CATHODE COLLECTOR FOR MI51T RED GREEN


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PDF MI51T 6S477 MI51T
ML309

Abstract: No abstract text available
Text: MICRO ELECTRONICS LTD SIE D bOT17flfi GOÜ1G1S TTH MEHK Infrared Emitting Diodes T -4 I-1 3 TYPE NO. MI31T MI31TA MI32T MI32TA MI37T MIB37T MI38T MIB38T - MI51T MI51TA - MIB51T MIB51TA MIB57T-J MIB57T-K Àp (nm) 940 880 940 880 940 940 940 940 940 880 940 880 940 940 p 0 TYP (mW) 0.5 2.8 0.5 2.8 2.0 2.0 2.0 2.0 1.0 5.0 4.0 8.0 2.62 2.62 1 (mA) 20 20 20 20 20 20 20 20 20 50 20 50 20 20 V f MAX (V) 1.6 1.8 1.6 1.8 2.0 2.0 2.0 2.0 1.6 1.8 1.6 1.8 2.0 2.0 1 (mA) 20 20 20 20 100


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PDF bOT17flfi MI31T MI31TA MI32T MI32TA MI37T MIB37T MI38T MIB38T MI51T ML309
ML309

Abstract: MIB37T MI51T MI38T MI37T MI32TA MI32T MI31TA MI31T MIB51T
Text: Infrared Emitting Diodes TYPEE NO. (nm) P 0 TYP (mW) y 2 91/2 (degree) 1 MI51T M151 TA 940 880 1.0 5.0 20 50


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PDF MI31T MI31TA MI32T MI32TA MI37T MIB37T MI38T MIB38T 1-45a 1-45b ML309 MI51T MIB51T
ML309

Abstract: No abstract text available
Text: Infrared Emitting Diodes TYPE NO. Xp (ran) Po TYP (mW) 0.5 2.8 0.5 2.8 2.0 2.0 2.0 2.0 1.0 5.0 4.0 8.0 2.62 2.62 IF (mA) 20 20 20 20 20 20 20 20 20 50 20 50 20 20 VF MAX 00 1.6 1.8 1.6 1.8 2.0 2.0 2.0 2.0 1.6 1.8 1.6 1.8 2.0 2.0 IF (mA) 20 20 20 20 100 100 100 100 20 20 20 20 100 100 2 0 Vi (degree) 35 35 35 35 30 18 30 20 50 50 40 40 20 60 PACKAGE CASE NO. 1-4 1-61 1-7 1-8 1-62 1-11 1-15 1-16 1-16 MI31T MI31TA MI32T MI32TA MI33T MIB33T MI38T MIB38T MI51T MI51TA MIB51T


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PDF MI31T MI31TA MI32T MI32TA MI33T MIB33T MI38T MIB38T MI51T MI51TA ML309
Not Available

Abstract: No abstract text available
Text: Diodes TYPE NO. M I3JT MI31TA MI32T MI32TA MI33T MIB33T M I38T MIB38T MI51T M151TA MIB51T MIB51TA M


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PDF MOGB517W MSB557D MSB557TA MSB557DA MOB557D MOB557DR MGB557D MSB558DA MSB559TA
2SA532

Abstract: BC109 BC184 BC549 BC317 2SC734 Y BC159 8 MS181A BC357 TTP31A 2SC876 ML78M06A
Text: MH8500 MH8700 MI31T MI31TA MI32T MI32TA MI33T MI38T MI51T MI51TA MIB33T MIB38T MIB51T MIB51TA MIB57T-J


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PDF 057-2G 1611G 1620G 1621-2G 1623G 1641G 1N4001 1N4002 1N4004 1N4005 2SA532 BC109 BC184 BC549 BC317 2SC734 Y BC159 8 MS181A BC357 TTP31A 2SC876 ML78M06A
MI51TA

Abstract: MIB51TA ncl 058 hx 002
Text: Mm p^ MI51TA | m^ B * m^m MIB51TA g ■WfK^^ ■■INFRARED Ivrxv " DESCRIPTION MI51TA & MIB51TA are GaAlAs infrared emitting diode molded T-l 3/4 standard 5mm diameter clear plastic package, with the lensing effect of the package, and MIB51TA with cup type leadframe. ABSOLUTE MAXIMUM RATINGS , = 0.01. ELECTRO-OPTICAL CHARACTERISTICS (Ta=25°C) PARAMETER SYMBOL MI51TA MIB51TA UNIT , Micro Hx. Tei: 2343 0181-5 Rev.A MECHANICAL OUTLINE MI51TA 04.98 "(0.196) (0.025) Cathode


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PDF MI51TA MIB51TA MIB51TA MI51TA ncl 058 hx 002
HX 830

Abstract: MI51TA-2 MI51TA-3
Text: Iwl I ^^ DESCRIPTION MI51TA-2 & MI51TA-3 is GaAlAs infrared emitting diode molded in T-l 3/4 standard 5mm diameter clear transparent lens. MI51TA-2 MI51TA-3 100mA 100mA 1A* 1A* 5V 5V 200mW 230mW -25 to +85°C 260°C for 5 sec. * Pulse Width = 10/xs, Duty Ratio = 0.01. 04.98 1.3 "(0.05) 0.64lna, (0.025) °'6Z _ V ' (0.024p (0.024) 1.5(0.06) îathode -2.54(0.1) • All Dimension in mm , =25°C) PARAMETER SYMBOL MI51TA-2 MI51TA-3 UNIT CONDITIONS Radiant Power Output Min Po 0.6 0.8 mW lF=20mA Typ


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PDF MI51TA-2 MI51TA-3 MI51TA-2 MI51TA-3 100mA 100mA 200mW 230mW 10/xs, 64lna, HX 830
MI51TA

Abstract: MIB51TA em4070
Text: Mn ^^¡^ p^ MI51TA I W ^ ■M W MIB51TA g ■W/K^^ ■■INFRARED 1 ^^ |\ ^^ EM7Zl DESCRIPTION MI51TA & MIB51TA are GaAlAs infrared emitting diode molded T-l 3/4 standard 5mm diameter clear plastic package, with the lensing effect of the package, and MIB51TA with cup type leadframe. ABSOLUTE , , Duty Ratio = 0.01. ELECTRO-OPTICAL CHARACTERISTICS (Ta=25°C) PARAMETER SYMBOL MI51TA MIB51TA UNIT , Micro Hx. Tei: 2343 0181-5 Rev.A MECHANICAL OUTLINE MI51TA 04.98 (0.196) (0.025) Cathode


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PDF MI51TA MIB51TA MIB51TA MI51TA em4070
Not Available

Abstract: No abstract text available
Text: MICRO 0 4 .9 8 MI51TA-2 MI51TA-3 INFRARED EMITTING DIODE D E SC R IPT IO N MI51TA-2 & MI51TA-3 is GaAlAs infrared emitting diode molded in T -l 3/4 standard 5mm diameter clear transparent lens. 87 (0.34) 1.0 j~ (0.04) "(0.196) 1.3 ( 0 .05 ) 4.1 (0.16) I 0.76 1(0.03) (0.025) ° - b ¿ - ' ' (0.024) athode 1.5(0.06) -2.54(0.1) · All Dimension in mm (inch) · N o , H alf Width Viewing Angie Max Typ Typ Typ Ir Xp AX (Ta=25°C) MI51TA-2 0.6 1.0 M I51TA-3 0.8 1.5


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PDF MI51TA-2 MI51TA-3 MI51TA-2 MI51TA-3 I51TA-2 10/xs, 100mA I51TA-3 230mW
HX 830

Abstract: MI51TA-2 MI51TA-3
Text: MICRO MI51TA-2 MI51TA-3 INFRARED EMITTING DIODE iiijtmwifH wuaBii iHJWH mim um DESCRIPTION MI51TA-2 & MI51TA-3 is GaAlAs infrared emitting diode molded in T-l 3/4 standard 5mm diameter clear , ) Power Dissipation Operating Temperature Range Lead Soldering Temperature (1/16" from body) MI51TA-2 100mA 1A* 5V 200mW MI51TA-3 100mA IA* 5V 230mW -25 to +85°C 260°C for 5 sec. * Pulse Width = 10/xs, Duty Ratio = 0.01. ELECTRO-OPTICAL CHARACTERISTICS (Ta=25°C) PARAMETER SYMBOL MI51TA-2 MI51TA-3 UNIT


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PDF MI51TA-2 MI51TA-3 MI51TA-2 100mA 200mW 230mW HX 830
MI51TA

Abstract: MIB51TA
Text: MIS ITA MIB51TA INFRARED EMITTING DIODE DESCRIPTION MI51TA & MIB51TA are GaAlAs infrared emitting diode molded T-l 3/4 standard 5mm diameter clear plastic package, with the lensing effect of the package, and MIB51JA with cup type leadframe. ABSOLUTE MAXIMUM RATINGS Forward Current (Continuous) 100mA Pulse Forward Current 1 A* Reverse Voltage (Continuous) 6V Power Dissipation 180mW Operating Temperature Range -25 to +85°C Lead Soldering Temperature (1/16" from body) 260°C for 5 sec. * Pulse Width = 10 /¿s


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PDF MIB51TA MI51TA MIB51JA 100mA 180mW MI51TA
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